Report date: Nov 6,2024 Conflict count: 361874 Publisher: IOP Publishing Title count: 1 Conflict count: 3480 ========================================================== Created: 2023-01-05 12:13:43 ConfID: 6692966 CauseID: 1557138274 OtherID: 1363324402 JT: Japanese Journal of Applied Physics MD: Tuziuti,50,8r,88006,2011,Two-Dimensional Patterning of Inorganic Particles in Resin Using Ultrasound-Induced Plate Vibration DOI: 10.1143/JJAP.50.088006(Journal) (6692966-N) DOI: 10.7567/JJAP.50.088006(Journal) ========================================================== Created: 2023-01-05 12:13:44 ConfID: 6692967 CauseID: 1557138275 OtherID: 1363323431 JT: Japanese Journal of Applied Physics MD: Nishino,50,3r,35204,2011,Fabrication of Nanogap Electrodes by the Molecular Lithography Technique DOI: 10.1143/JJAP.50.035204(Journal) (6692967-N) DOI: 10.7567/JJAP.50.035204(Journal) ========================================================== Created: 2023-01-05 12:13:40 ConfID: 6692964 CauseID: 1557138272 OtherID: 1363324272 JT: Japanese Journal of Applied Physics MD: Kanda,50,7s,724,2011,Design and Evaluation of Emulsion Generation Device Using Ultrasonic Vibration and Microchannel DOI: 10.1143/JJAP.50.07HE24(Journal) (6692964-N) DOI: 10.7567/JJAP.50.07HE24(Journal) ========================================================== Created: 2023-01-05 12:13:43 ConfID: 6692965 CauseID: 1557138273 OtherID: 1363324496 JT: Japanese Journal of Applied Physics MD: Ito,50,8s3,815,2011,Nanometer-Scale Deposition of Metal Plating Using a Nanopipette Probe in Liquid Condition DOI: 10.1143/JJAP.50.08LB15(Journal) (6692965-N) DOI: 10.7567/JJAP.50.08LB15(Journal) ========================================================== Created: 2023-01-05 12:13:37 ConfID: 6692962 CauseID: 1557138269 OtherID: 1363323419 JT: Japanese Journal of Applied Physics MD: Matsuura,50,3r,32701,2011,Development of a Low-Noise Yellow-Green Laser Using a Yb-Doped Double-Clad Fiber Laser and a Periodically Poled LiNbO3 Waveguide Crystal DOI: 10.1143/JJAP.50.032701(Journal) (6692962-N) DOI: 10.7567/JJAP.50.032701(Journal) ========================================================== Created: 2023-01-05 12:13:40 ConfID: 6692963 CauseID: 1557138271 OtherID: 1363323404 JT: Japanese Journal of Applied Physics MD: Emoto,50,3r,32502,2011,Vector Gratings Fabricated by Polarizer Rotation Exposure to Hydrogen-Bonded Liquid Crystalline Polymers DOI: 10.1143/JJAP.50.032502(Journal) (6692963-N) DOI: 10.7567/JJAP.50.032502(Journal) ========================================================== Created: 2023-01-05 12:13:36 ConfID: 6692960 CauseID: 1557138267 OtherID: 1363323435 JT: Japanese Journal of Applied Physics MD: Lu,50,3r,35806,2011,Tetragonal Phase Stabilization Caused by Pr Ions in Ba(Ti0.99Mn0.01)O3 with Mixed Phases DOI: 10.1143/JJAP.50.035806(Journal) (6692960-N) DOI: 10.7567/JJAP.50.035806(Journal) ========================================================== Created: 2023-01-05 12:13:37 ConfID: 6692961 CauseID: 1557138268 OtherID: 1363323455 JT: Japanese Journal of Applied Physics MD: Takahashi,50,3r,36701,2011,Development of a Neutral Beam Profile Monitor DOI: 10.1143/JJAP.50.036701(Journal) (6692961-N) DOI: 10.7567/JJAP.50.036701(Journal) ========================================================== Created: 2023-01-05 12:13:45 ConfID: 6692974 CauseID: 1557138283 OtherID: 1363324230 JT: Japanese Journal of Applied Physics MD: Hiraoka,50,7s,719,2011,Improved Measurement of Soil Moisture and Groundwater Level Using Ultrasonic Waves DOI: 10.1143/JJAP.50.07HC19(Journal) (6692974-N) DOI: 10.7567/JJAP.50.07HC19(Journal) ========================================================== Created: 2023-01-05 12:13:46 ConfID: 6692975 CauseID: 1557138284 OtherID: 1363323461 JT: Japanese Journal of Applied Physics MD: Chen,50,3r,37202,2011,Low Voltage Electrowetting Optical Deflector DOI: 10.1143/JJAP.50.037202(Journal) (6692975-N) DOI: 10.7567/JJAP.50.037202(Journal) ========================================================== Created: 2023-01-05 12:13:42 ConfID: 6692972 CauseID: 1557138280 OtherID: 1363323402 JT: Japanese Journal of Applied Physics MD: Imai,50,3r,34302,2011,Stability Diagrams of Triple-Dot Single-Electron Device with Single Common Gate DOI: 10.1143/JJAP.50.034302(Journal) (6692972-N) DOI: 10.7567/JJAP.50.034302(Journal) ========================================================== Created: 2023-01-05 12:13:48 ConfID: 6692973 CauseID: 1557138281 OtherID: 1363323453 JT: Japanese Journal of Applied Physics MD: Sumiya,50,3r,37002,2011,Molecular Dynamics Approach of Ion Channeling through Peptide Nanotubes DOI: 10.1143/JJAP.50.037002(Journal) (6692973-N) DOI: 10.7567/JJAP.50.037002(Journal) ========================================================== Created: 2023-01-05 12:13:41 ConfID: 6692970 CauseID: 1557138278 OtherID: 1363323010 JT: Japanese Journal of Applied Physics MD: Kondo,50,12r,123001,2011,Large Tunnel Magnetoresistance of Full-Heusler CoFeAlSi Alloy Granular Films DOI: 10.1143/JJAP.50.123001(Journal) (6692970-N) DOI: 10.7567/JJAP.50.123001(Journal) ========================================================== Created: 2023-01-05 12:13:42 ConfID: 6692971 CauseID: 1557138279 OtherID: 1363323408 JT: Japanese Journal of Applied Physics MD: Ueda,50,3r,32704,2011,Dynamic Recording of 200 Gbytes in Three-Dimensional Optical Disk by a 405 nm Wavelength Picosecond Laser DOI: 10.1143/JJAP.50.032704(Journal) (6692971-N) DOI: 10.7567/JJAP.50.032704(Journal) ========================================================== Created: 2023-01-05 12:13:44 ConfID: 6692968 CauseID: 1557138276 OtherID: 1363322958 JT: Japanese Journal of Applied Physics MD: Ya'akobovitz,50,11r,117201,2011,Large Angle Silicon-on-Insulator Tilting Actuator with Kinematic Excitation and Simple Integrated Parallel-Plate Electrostatic Transducer DOI: 10.1143/JJAP.50.117201(Journal) (6692968-N) DOI: 10.7567/JJAP.50.117201(Journal) ========================================================== Created: 2023-01-05 12:13:41 ConfID: 6692969 CauseID: 1557138277 OtherID: 1363324229 JT: Japanese Journal of Applied Physics MD: Tamura,50,7s,711,2011,Software-Controlled Measurement System for Large Vibrational Amplitude Piezoelectric Resonator Using Continuous Driving Method with Numerical Equivalent Model DOI: 10.1143/JJAP.50.07HC11(Journal) (6692969-N) DOI: 10.7567/JJAP.50.07HC11(Journal) ========================================================== Created: 2023-01-05 12:13:50 ConfID: 6692982 CauseID: 1557138292 OtherID: 1363324261 JT: Japanese Journal of Applied Physics MD: Pan,50,7s,702,2011,Design and Fabrication of Fresnel Lens and ZnO Thin-Film Transducer DOI: 10.1143/JJAP.50.07HD02(Journal) (6692982-N) DOI: 10.7567/JJAP.50.07HD02(Journal) ========================================================== Created: 2023-01-05 12:13:51 ConfID: 6692983 CauseID: 1557138293 OtherID: 1363323003 JT: Japanese Journal of Applied Physics MD: Obata,50,12r,121603,2011,Small-Molecule-Based Organic Photovoltaic Devices Covering Visible and Near-Infrared Absorption through Phase Transition of Titanylphthalocyanine Induced by Solvent Exposure DOI: 10.1143/JJAP.50.121603(Journal) (6692983-N) DOI: 10.7567/JJAP.50.121603(Journal) ========================================================== Created: 2023-01-05 12:13:53 ConfID: 6692980 CauseID: 1557138289 OtherID: 1363323440 JT: Japanese Journal of Applied Physics MD: Hsieh,50,3r,35201,2011,Influence of Interface Arrangement on Phonon Heat Transfer in Nanocomposites DOI: 10.1143/JJAP.50.035201(Journal) (6692980-N) DOI: 10.7567/JJAP.50.035201(Journal) ========================================================== Created: 2023-01-05 12:13:54 ConfID: 6692981 CauseID: 1557138291 OtherID: 1363323457 JT: Japanese Journal of Applied Physics MD: Masuno,50,3r,37201,2011,Enhanced Contrast of Wavelength-Selective Mid-Infrared Detectors Stable against Incident Angle and Temperature Changes DOI: 10.1143/JJAP.50.037201(Journal) (6692981-N) DOI: 10.7567/JJAP.50.037201(Journal) ========================================================== Created: 2023-01-05 12:13:47 ConfID: 6692978 CauseID: 1557138287 OtherID: 1363322949 JT: Japanese Journal of Applied Physics MD: Mitsui,50,11r,116601,2011,Artifact Reduction in Tomographic Images for Nondestructive Testing of Square Billets Using Ultrasonic Computerized Tomography DOI: 10.1143/JJAP.50.116601(Journal) (6692978-N) DOI: 10.7567/JJAP.50.116601(Journal) ========================================================== Created: 2023-01-05 12:13:54 ConfID: 6692979 CauseID: 1557138290 OtherID: 1363324285 JT: Japanese Journal of Applied Physics MD: Hosokawa,50,7s,711,2011,Effect of Ultrasound Irradiation on Arsenic Adsorption from Aqueous Solution into Iron Compound DOI: 10.1143/JJAP.50.07HE11(Journal) (6692979-N) DOI: 10.7567/JJAP.50.07HE11(Journal) ========================================================== Created: 2023-01-05 12:13:46 ConfID: 6692976 CauseID: 1557138285 OtherID: 1363323430 JT: Japanese Journal of Applied Physics MD: Kim,50,3r,35003,2011,Photoluminescence Studies of Porous ZnO Nanorods DOI: 10.1143/JJAP.50.035003(Journal) (6692976-N) DOI: 10.7567/JJAP.50.035003(Journal) ========================================================== Created: 2023-01-05 12:13:47 ConfID: 6692977 CauseID: 1557138286 OtherID: 1363323452 JT: Japanese Journal of Applied Physics MD: Teramoto,50,3r,36201,2011,Surface Treatment of TiO2 Electrode for Dye-Sensitized Solar Cells Using Low-Temperature and Low-Energy Dielectric Barrier Discharge in Air DOI: 10.1143/JJAP.50.036201(Journal) (6692977-N) DOI: 10.7567/JJAP.50.036201(Journal) ========================================================== Created: 2023-01-05 12:13:57 ConfID: 6692990 CauseID: 1557138304 OtherID: 1363322907 JT: Japanese Journal of Applied Physics MD: Yang,50,11r,111001,2011,Electron Emission Properties of Nitrogen-Induced Localized Defects in InAsN/GaAs Quantum Dots DOI: 10.1143/JJAP.50.111001(Journal) (6692990-N) DOI: 10.7567/JJAP.50.111001(Journal) ========================================================== Created: 2023-01-05 12:13:58 ConfID: 6692991 CauseID: 1557138307 OtherID: 1363324486 JT: Japanese Journal of Applied Physics MD: Takahashi,50,8s3,805,2011,Photoassisted Kelvin Probe Force Microscopy on Multicrystalline Si Solar Cell Materials DOI: 10.1143/JJAP.50.08LA05(Journal) (6692991-N) DOI: 10.7567/JJAP.50.08LA05(Journal) ========================================================== Created: 2023-01-05 12:13:55 ConfID: 6692988 CauseID: 1557138301 OtherID: 1363324362 JT: Japanese Journal of Applied Physics MD: Rahman,50,8r,82303,2011,Effect of Porous Counter Electrode with Highly Conductive Layer on Dye-Sensitized Solar Cells DOI: 10.1143/JJAP.50.082303(Journal) (6692988-N) DOI: 10.7567/JJAP.50.082303(Journal) ========================================================== Created: 2023-01-05 12:13:56 ConfID: 6692989 CauseID: 1557138302 OtherID: 1363324290 JT: Japanese Journal of Applied Physics MD: Asami,50,7s,731,2011,Vibrator Development for Hole Machining by Ultrasonic Longitudinal and Torsional Vibration DOI: 10.1143/JJAP.50.07HE31(Journal) (6692989-N) DOI: 10.7567/JJAP.50.07HE31(Journal) ========================================================== Created: 2023-01-05 12:13:53 ConfID: 6692986 CauseID: 1557138298 OtherID: 1363324535 JT: Japanese Journal of Applied Physics MD: Nii,50,9r,91501,2011,Structural Characterization of Lead Titanate Film Synthesized by Hydrothermal Method DOI: 10.1143/JJAP.50.091501(Journal) (6692986-N) DOI: 10.7567/JJAP.50.091501(Journal) ========================================================== Created: 2023-01-05 12:13:55 ConfID: 6692987 CauseID: 1557138300 OtherID: 1363324274 JT: Japanese Journal of Applied Physics MD: Na,50,7s,714,2011,Addition of Sonochemical Reactor to the Solar Photocatalytic Compound Parabolic Concentrators System DOI: 10.1143/JJAP.50.07HE14(Journal) (6692987-N) DOI: 10.7567/JJAP.50.07HE14(Journal) ========================================================== Created: 2023-01-05 12:13:51 ConfID: 6692984 CauseID: 1557138295 OtherID: 1363324294 JT: Japanese Journal of Applied Physics MD: Inaba,50,7s,713,2011,Ultrasonic Coagulation of Large Tissue Region by Generating Multiple Cavitation Clouds in Direction Perpendicular to Ultrasound Propagation DOI: 10.1143/JJAP.50.07HF13(Journal) (6692984-N) DOI: 10.7567/JJAP.50.07HF13(Journal) ========================================================== Created: 2023-01-05 12:13:52 ConfID: 6692985 CauseID: 1557138297 OtherID: 1363322930 JT: Japanese Journal of Applied Physics MD: Xu,50,11r,115502,2011,Improvement of (1122) Semipolar GaN Crystal Quality with TiN Interlayer by Metal Organic Vapor Phase Epitaxy DOI: 10.1143/JJAP.50.115502(Journal) (6692985-N) DOI: 10.7567/JJAP.50.115502(Journal) ========================================================== Created: 2023-01-05 12:13:22 ConfID: 6692934 CauseID: 1557138230 OtherID: 1363323248 JT: Japanese Journal of Applied Physics MD: Sakai,50,1s2,113,2011,Multi-Excitation-Laser Raman Analysis of Chirality-Controlled Single-Walled Carbon Nanotubes with Free Electron Laser Irradiation during Growth DOI: 10.1143/JJAP.50.01BJ13(Journal) (6692934-N) DOI: 10.7567/JJAP.50.01BJ13(Journal) ========================================================== Created: 2023-01-05 12:13:23 ConfID: 6692935 CauseID: 1557138231 OtherID: 1363322933 JT: Japanese Journal of Applied Physics MD: Chen,50,11r,113101,2011,Controllable Conditional Quantum Oscillations and Quantum Gate Operations in Superconducting Flux Qubits DOI: 10.1143/JJAP.50.113101(Journal) (6692935-N) DOI: 10.7567/JJAP.50.113101(Journal) ========================================================== Created: 2023-01-05 12:13:21 ConfID: 6692932 CauseID: 1557138227 OtherID: 1363322921 JT: Japanese Journal of Applied Physics MD: Ryu,50,11r,111501,2011,Effect of Microstructure on Magnetoelectric Properties of 0.9Pb(Zr0.52Ti0.48)O3–0.1Pb(Zn1/3Nb2/3)O3 and Ni0.8Zn0.2Fe2O4 Particulate Composites DOI: 10.1143/JJAP.50.111501(Journal) (6692932-N) DOI: 10.7567/JJAP.50.111501(Journal) ========================================================== Created: 2023-01-05 12:13:22 ConfID: 6692933 CauseID: 1557138228 OtherID: 1363324356 JT: Japanese Journal of Applied Physics MD: Lee,50,8r,84101,2011,Reflective Dual Mode Liquid Crystal Display with Dynamic Mode Utilizing the Transition Behavior between the Two Stable States of Its Memory Mode DOI: 10.1143/JJAP.50.084101(Journal) (6692933-N) DOI: 10.7567/JJAP.50.084101(Journal) ========================================================== Created: 2023-01-05 12:13:20 ConfID: 6692930 CauseID: 1557138225 OtherID: 1363322904 JT: Japanese Journal of Applied Physics MD: Sahrai,50,11r,110201,2011,Optical Bistability and Multi-Stability via Quantum Interference in a Four-Level N-Type Atomic System DOI: 10.1143/JJAP.50.110201(Journal) (6692930-N) DOI: 10.7567/JJAP.50.110201(Journal) ========================================================== Created: 2023-01-05 12:13:21 ConfID: 6692931 CauseID: 1557138226 OtherID: 1363323260 JT: Japanese Journal of Applied Physics MD: Tameev,50,1s2,119,2011,Enhanced Charge Mobility in Polymer Nanocomposites Incorporating Donor–Acceptor Interfaces DOI: 10.1143/JJAP.50.01BJ19(Journal) (6692931-N) DOI: 10.7567/JJAP.50.01BJ19(Journal) ========================================================== Created: 2023-01-05 12:13:19 ConfID: 6692928 CauseID: 1557138219 OtherID: 1363323006 JT: Japanese Journal of Applied Physics MD: Nomiyama,50,12r,122201,2011,Proposal for a Novel Bistable Device Using Two-Mode Competition between an In-Plane Laser Diode and a Vertical-Cavity Surface-Emitting Laser DOI: 10.1143/JJAP.50.122201(Journal) (6692928-N) DOI: 10.7567/JJAP.50.122201(Journal) ========================================================== Created: 2023-01-05 12:13:20 ConfID: 6692929 CauseID: 1557138224 OtherID: 1363324416 JT: Japanese Journal of Applied Physics MD: Minami,50,8s1,803,2011,Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma DOI: 10.1143/JJAP.50.08JE03(Journal) (6692929-N) DOI: 10.7567/JJAP.50.08JE03(Journal) ========================================================== Created: 2023-01-05 12:13:27 ConfID: 6692942 CauseID: 1557138245 OtherID: 1363324255 JT: Japanese Journal of Applied Physics MD: Kawabata,50,7s,706,2011,Phase Change Nanodroplets and Microbubbles Generated from Them as Sources of Chemically Active Cavitation DOI: 10.1143/JJAP.50.07HE06(Journal) (6692942-N) DOI: 10.7567/JJAP.50.07HE06(Journal) ========================================================== Created: 2023-01-05 12:13:27 ConfID: 6692943 CauseID: 1557138246 OtherID: 1363322923 JT: Japanese Journal of Applied Physics MD: Yoo,50,11r,116201,2011,Parameter Study on Radiation Therapy with Laser-Accelerated Electrons Using a Sharp Density Transition Scheme DOI: 10.1143/JJAP.50.116201(Journal) (6692943-N) DOI: 10.7567/JJAP.50.116201(Journal) ========================================================== Created: 2023-01-05 12:13:25 ConfID: 6692940 CauseID: 1557138243 OtherID: 1363324350 JT: Japanese Journal of Applied Physics MD: Dang,50,8r,80214,2011,On Refining the Relationship between Aspect Ratio and Percolation Threshold of Practical Carbon Nanotubes/Polymer Nanocomposites DOI: 10.1143/JJAP.50.080214(Journal) (6692940-N) DOI: 10.7567/JJAP.50.080214(Journal) ========================================================== Created: 2023-01-05 12:13:26 ConfID: 6692941 CauseID: 1557138244 OtherID: 1363324337 JT: Japanese Journal of Applied Physics MD: Higa,50,8r,80209,2011,Well-in-Well Structure for High-Speed Carrier Relaxation into Quantum Wells DOI: 10.1143/JJAP.50.080209(Journal) (6692941-N) DOI: 10.7567/JJAP.50.080209(Journal) ========================================================== Created: 2023-01-05 12:13:29 ConfID: 6692938 CauseID: 1557138240 OtherID: 1363324284 JT: Japanese Journal of Applied Physics MD: Cui,50,7s,708,2011,Arsenite Oxidation and Treatment by Ultrasound/Iron in Aqueous Solutions DOI: 10.1143/JJAP.50.07HE08(Journal) (6692938-N) DOI: 10.7567/JJAP.50.07HE08(Journal) ========================================================== Created: 2023-01-05 12:13:25 ConfID: 6692939 CauseID: 1557138242 OtherID: 1363324220 JT: Japanese Journal of Applied Physics MD: Yokoi,50,7r,78001,2011,Design of Optical Isolator with Sputter-Deposited Si Layer Employing Nonreciprocal Radiation-Mode Conversion DOI: 10.1143/JJAP.50.078001(Journal) (6692939-N) DOI: 10.7567/JJAP.50.078001(Journal) ========================================================== Created: 2023-01-05 12:13:24 ConfID: 6692936 CauseID: 1557138234 OtherID: 1363323421 JT: Japanese Journal of Applied Physics MD: Ramazani,50,3r,35203,2011,Self-Ordered Nanopore Arrays with 300–400 nm Interpore Distances Formed by High Field Accelerated Mild Anodization DOI: 10.1143/JJAP.50.035203(Journal) (6692936-N) DOI: 10.7567/JJAP.50.035203(Journal) ========================================================== Created: 2023-01-05 12:13:28 ConfID: 6692937 CauseID: 1557138239 OtherID: 1363324399 JT: Japanese Journal of Applied Physics MD: Kumagai,50,8s1,802,2011,Novel Atmospheric Pressure Inductively Coupled Micro Plasma Source Using Floating Wire Electrode DOI: 10.1143/JJAP.50.08JA02(Journal) (6692937-N) DOI: 10.7567/JJAP.50.08JA02(Journal) ========================================================== Created: 2023-01-05 12:13:31 ConfID: 6692950 CauseID: 1557138255 OtherID: 1363324448 JT: Japanese Journal of Applied Physics MD: Harafuji,50,8s1,803,2011,Molecular Dynamics of Ion Incident Angle Dependence of Sputtering Yield in Chlorine-Adsorbed GaN Crystal DOI: 10.1143/JJAP.50.08JG03(Journal) (6692950-N) DOI: 10.7567/JJAP.50.08JG03(Journal) ========================================================== Created: 2023-01-05 12:13:32 ConfID: 6692951 CauseID: 1557138256 OtherID: 1363324437 JT: Japanese Journal of Applied Physics MD: Matsumoto,50,8s1,814,2011,Process Performances of 2 ns Pulsed Discharge Plasma DOI: 10.1143/JJAP.50.08JF14(Journal) (6692951-N) DOI: 10.7567/JJAP.50.08JF14(Journal) ========================================================== Created: 2023-01-05 12:13:31 ConfID: 6692948 CauseID: 1557138254 OtherID: 1363324432 JT: Japanese Journal of Applied Physics MD: Eriguchi,50,8s1,804,2011,Model for Effects of RF Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching DOI: 10.1143/JJAP.50.08JE04(Journal) (6692948-N) DOI: 10.7567/JJAP.50.08JE04(Journal) ========================================================== Created: 2023-01-05 12:13:34 ConfID: 6692949 CauseID: 1557138253 OtherID: 1363325471 JT: Japanese Journal of Applied Physics MD: Minemoto,50,3r,31203,2011,Grain Boundary Character Distribution on the Surface of Cu(In,Ga)Se2 Thin Film DOI: 10.1143/JJAP.50.031203(Journal) (6692949-N) DOI: 10.7567/JJAP.50.031203(Journal) ========================================================== Created: 2023-01-05 12:13:30 ConfID: 6692946 CauseID: 1557138251 OtherID: 1363322988 JT: Japanese Journal of Applied Physics MD: Kuchiyama,50,12r,121101,2011,Composition Analysis of High-Stable Transparent Conductive Zinc Oxide by X-ray Photoelectron Spectroscopy and Secondary Ion Mass Spectroscopy DOI: 10.1143/JJAP.50.121101(Journal) (6692946-N) DOI: 10.7567/JJAP.50.121101(Journal) ========================================================== Created: 2023-01-05 12:13:33 ConfID: 6692947 CauseID: 1557138252 OtherID: 1363323426 JT: Japanese Journal of Applied Physics MD: Joung,50,3r,35002,2011,Synthesis of Highly Tetragonal BaTiO3 Nanopowders Using Acetone as a Solvent by Alkoxide–Hydroxide Route DOI: 10.1143/JJAP.50.035002(Journal) (6692947-N) DOI: 10.7567/JJAP.50.035002(Journal) ========================================================== Created: 2023-01-05 12:13:24 ConfID: 6692944 CauseID: 1557138233 OtherID: 1363323437 JT: Japanese Journal of Applied Physics MD: Ohmagari,50,3r,35101,2011,Heterojunction Diodes Comprised of n-Type Silicon and p-Type Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite DOI: 10.1143/JJAP.50.035101(Journal) (6692944-N) DOI: 10.7567/JJAP.50.035101(Journal) ========================================================== Created: 2023-01-05 12:13:28 ConfID: 6692945 CauseID: 1557138247 OtherID: 1363323429 JT: Japanese Journal of Applied Physics MD: Hoshino,50,3r,35601,2011,Characterization of Hot-Implanted Fe near the SiO2/Si Interface DOI: 10.1143/JJAP.50.035601(Journal) (6692945-N) DOI: 10.7567/JJAP.50.035601(Journal) ========================================================== Created: 2023-01-05 12:13:39 ConfID: 6692958 CauseID: 1557138265 OtherID: 1363323379 JT: Japanese Journal of Applied Physics MD: Kim,50,3r,31503,2011,Evolution of Linear Moduli and Remanent State Variables during Polarization Reversal in a Lead Zirconate Titanate Wafer at Various Temperatures DOI: 10.1143/JJAP.50.031503(Journal) (6692958-N) DOI: 10.7567/JJAP.50.031503(Journal) ========================================================== Created: 2023-01-05 12:13:36 ConfID: 6692959 CauseID: 1557138266 OtherID: 1363324418 JT: Japanese Journal of Applied Physics MD: Kobayashi,50,8s1,801,2011,Behavior of Dust Particles in Plasma Etching Apparatus DOI: 10.1143/JJAP.50.08JE01(Journal) (6692959-N) DOI: 10.7567/JJAP.50.08JE01(Journal) ========================================================== Created: 2023-01-05 12:13:38 ConfID: 6692956 CauseID: 1557138263 OtherID: 1363325465 JT: Japanese Journal of Applied Physics MD: Park,50,3r,31003,2011,Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy DOI: 10.1143/JJAP.50.031003(Journal) (6692956-N) DOI: 10.7567/JJAP.50.031003(Journal) ========================================================== Created: 2023-01-05 12:13:38 ConfID: 6692957 CauseID: 1557138264 OtherID: 1363324298 JT: Japanese Journal of Applied Physics MD: Miwa,50,7s,707,2011,Shear Wave Velocity Estimation by Virtual Sensing Array Spectrum Analysis DOI: 10.1143/JJAP.50.07HF07(Journal) (6692957-N) DOI: 10.7567/JJAP.50.07HF07(Journal) ========================================================== Created: 2023-01-05 12:13:35 ConfID: 6692954 CauseID: 1557138261 OtherID: 1363323407 JT: Japanese Journal of Applied Physics MD: Kato,50,3r,33001,2011,Microwave Magnetic Field Heating of a Cobalt-Based Amorphous Ribbon DOI: 10.1143/JJAP.50.033001(Journal) (6692954-N) DOI: 10.7567/JJAP.50.033001(Journal) ========================================================== Created: 2023-01-05 12:13:35 ConfID: 6692955 CauseID: 1557138262 OtherID: 1363324236 JT: Japanese Journal of Applied Physics MD: Nishino,50,7s,710,2011,Precise Measurement of Pipe Wall Thickness in Noncontact Manner Using a Circumferential Lamb Wave Generated and Detected by a Pair of Air-Coupled Transducers DOI: 10.1143/JJAP.50.07HC10(Journal) (6692955-N) DOI: 10.7567/JJAP.50.07HC10(Journal) ========================================================== Created: 2023-01-05 12:13:32 ConfID: 6692952 CauseID: 1557138257 OtherID: 1363323443 JT: Japanese Journal of Applied Physics MD: Ishijima,50,3r,36002,2011,Design of Large-Area Surface Wave Plasma Excited by Slotted Waveguide Antennas with Novel Power Divider DOI: 10.1143/JJAP.50.036002(Journal) (6692952-N) DOI: 10.7567/JJAP.50.036002(Journal) ========================================================== Created: 2023-01-05 12:13:33 ConfID: 6692953 CauseID: 1557138258 OtherID: 1363323405 JT: Japanese Journal of Applied Physics MD: Omura,50,3r,32401,2011,Oxidization Process of Fe–Ni Mixed Prussian Blue Analogue Investigated by Valence-Differential Spectroscopy DOI: 10.1143/JJAP.50.032401(Journal) (6692953-N) DOI: 10.7567/JJAP.50.032401(Journal) ========================================================== Created: 2023-01-05 12:13:00 ConfID: 6692902 CauseID: 1557138171 OtherID: 1363324370 JT: Japanese Journal of Applied Physics MD: Kikuchi,50,8r,84201,2011,Dual Metal/High-k Gate-Last Complementary Metal–Oxide–Semiconductor Field-Effect Transistor with SiBN Film and Characteristic Behavior In Sub-1-nm Equivalent Oxide Thickness DOI: 10.1143/JJAP.50.084201(Journal) (6692902-N) DOI: 10.7567/JJAP.50.084201(Journal) ========================================================== Created: 2023-01-05 12:13:00 ConfID: 6692903 CauseID: 1557138172 OtherID: 1363324368 JT: Japanese Journal of Applied Physics MD: Zhang,50,8r,82302,2011,Inverted Organic Photovoltaic Cells with Solution-Processed Zinc Oxide as Electron Collecting Layer DOI: 10.1143/JJAP.50.082302(Journal) (6692903-N) DOI: 10.7567/JJAP.50.082302(Journal) ========================================================== Created: 2023-01-05 12:13:04 ConfID: 6692900 CauseID: 1557138169 OtherID: 1363325484 JT: Japanese Journal of Applied Physics MD: Lee,50,3r,31701,2011,Vertical Liquid Crystal Orientation on Amorphous Tantalum Pentoxide Surfaces Depending on Anisotropic Dipole–Dipole Interaction via Ion Beam Irradiation DOI: 10.1143/JJAP.50.031701(Journal) (6692900-N) DOI: 10.7567/JJAP.50.031701(Journal) ========================================================== Created: 2023-01-05 12:13:04 ConfID: 6692901 CauseID: 1557138170 OtherID: 1363322925 JT: Japanese Journal of Applied Physics MD: Liang,50,11r,116101,2011,Electron Density Range Measurable by Microwave Resonator Probe with Higher Mode Resonance DOI: 10.1143/JJAP.50.116101(Journal) (6692901-N) DOI: 10.7567/JJAP.50.116101(Journal) ========================================================== Created: 2023-01-05 12:12:59 ConfID: 6692898 CauseID: 1557138162 OtherID: 1363323414 JT: Japanese Journal of Applied Physics MD: Nakao,50,3r,33002,2011,Study of Noise in Current-Perpendicular-to-Plane Giant Magnetoresistance Devices with a Current Screen Layer DOI: 10.1143/JJAP.50.033002(Journal) (6692898-N) DOI: 10.7567/JJAP.50.033002(Journal) ========================================================== Created: 2023-01-05 12:13:03 ConfID: 6692899 CauseID: 1557138168 OtherID: 1363324428 JT: Japanese Journal of Applied Physics MD: Baek,50,8s1,808,2011,Fabrication of Transparent Protective Diamond-Like Carbon Films on Polymer DOI: 10.1143/JJAP.50.08JD08(Journal) (6692899-N) DOI: 10.7567/JJAP.50.08JD08(Journal) ========================================================== Created: 2023-01-05 12:12:58 ConfID: 6692896 CauseID: 1557138160 OtherID: 1363322994 JT: Japanese Journal of Applied Physics MD: Luo,50,12r,121001,2011,High Quality GaN Grown on Si(111) Using Fast Coalescence Growth DOI: 10.1143/JJAP.50.121001(Journal) (6692896-N) DOI: 10.7567/JJAP.50.121001(Journal) ========================================================== Created: 2023-01-05 12:12:58 ConfID: 6692897 CauseID: 1557138161 OtherID: 1363323002 JT: Japanese Journal of Applied Physics MD: Hayakawa,50,12r,121301,2011,Low Temperature Phosphorus Doping in Silicon Using Catalytically Generated Radicals DOI: 10.1143/JJAP.50.121301(Journal) (6692897-N) DOI: 10.7567/JJAP.50.121301(Journal) ========================================================== Created: 2023-01-05 12:13:06 ConfID: 6692910 CauseID: 1557138186 OtherID: 1363323447 JT: Japanese Journal of Applied Physics MD: Hayashi,50,3r,36203,2011,Dissociation Channels of c-C4F8 to CF2 Radical in Reactive Plasma DOI: 10.1143/JJAP.50.036203(Journal) (6692910-N) DOI: 10.7567/JJAP.50.036203(Journal) ========================================================== Created: 2023-01-05 12:13:06 ConfID: 6692911 CauseID: 1557138187 OtherID: 1363323403 JT: Japanese Journal of Applied Physics MD: Liou,50,3r,32501,2011,Optimization of a Broadband Visible or Near-Infrared Antireflection Coating Design Using Recurrent Circling Search Algorithm DOI: 10.1143/JJAP.50.032501(Journal) (6692911-N) DOI: 10.7567/JJAP.50.032501(Journal) ========================================================== Created: 2023-01-05 12:13:08 ConfID: 6692908 CauseID: 1557138183 OtherID: 1363324215 JT: Japanese Journal of Applied Physics MD: Kato,50,7s,704,2011,Nondestructive Evaluation of Weld Defect by Photoacoustic Microscopy and Its Destructive Inspection Using Replica DOI: 10.1143/JJAP.50.07HB04(Journal) (6692908-N) DOI: 10.7567/JJAP.50.07HB04(Journal) ========================================================== Created: 2023-01-05 12:13:09 ConfID: 6692909 CauseID: 1557138185 OtherID: 1363324453 JT: Japanese Journal of Applied Physics MD: Ino,50,8s1,802,2011,Depth Profile Characterization of Spin-Coated Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonic acid) Films for Thin-Film Solar Cells during Argon Plasma Etching by Spectroscopic Ellipsometry DOI: 10.1143/JJAP.50.08JG02(Journal) (6692909-N) DOI: 10.7567/JJAP.50.08JG02(Journal) ========================================================== Created: 2023-01-05 12:13:05 ConfID: 6692906 CauseID: 1557138182 OtherID: 1363323388 JT: Japanese Journal of Applied Physics MD: Omata,50,3r,31102,2011,Zn2LiGaO4, Wurtzite-Derived Wide Band Gap Oxide DOI: 10.1143/JJAP.50.031102(Journal) (6692906-N) DOI: 10.7567/JJAP.50.031102(Journal) ========================================================== Created: 2023-01-05 12:13:05 ConfID: 6692907 CauseID: 1557138181 OtherID: 1363324295 JT: Japanese Journal of Applied Physics MD: Fukushima,50,7s,702,2011,Estimation of Scatterer Diameter by Normalized Power Spectrum of High-Frequency Ultrasonic RF Echo for Assessment of Red Blood Cell Aggregation DOI: 10.1143/JJAP.50.07HF02(Journal) (6692907-N) DOI: 10.7567/JJAP.50.07HF02(Journal) ========================================================== Created: 2023-01-05 12:13:01 ConfID: 6692904 CauseID: 1557138173 OtherID: 1363322908 JT: Japanese Journal of Applied Physics MD: Inthisang,50,11r,111401,2011,Effect of Hydrogen Dilution on the Metastability of Hydrogenated Amorphous Silicon Oxide Solar Cells DOI: 10.1143/JJAP.50.111401(Journal) (6692904-N) DOI: 10.7567/JJAP.50.111401(Journal) ========================================================== Created: 2023-01-05 12:13:01 ConfID: 6692905 CauseID: 1557138174 OtherID: 1363322939 JT: Japanese Journal of Applied Physics MD: Moriki,50,11r,112601,2011,Photoluminescence of Polymer Film Fabricated by Plasma-Enhanced Chemical Vapor Deposition from Mixture of Benzene and Cyclohexene DOI: 10.1143/JJAP.50.112601(Journal) (6692905-N) DOI: 10.7567/JJAP.50.112601(Journal) ========================================================== Created: 2023-01-05 12:13:13 ConfID: 6692918 CauseID: 1557138201 OtherID: 1363324218 JT: Japanese Journal of Applied Physics MD: Maeda,50,7s,701,2011,Improved Process for Hydrothermal Lead-Free Piezoelectric Powders and Performances of Sintered (K0.48Na0.52)NbO3 Ceramics DOI: 10.1143/JJAP.50.07HC01(Journal) (6692918-N) DOI: 10.7567/JJAP.50.07HC01(Journal) ========================================================== Created: 2023-01-05 12:13:14 ConfID: 6692919 CauseID: 1557138202 OtherID: 1363324237 JT: Japanese Journal of Applied Physics MD: Kang,50,7s,701,2011,Optimal Design of Lamb Wave Electromagnetic Acoustic Transducers for Improving Their Excitation Performance DOI: 10.1143/JJAP.50.07HD01(Journal) (6692919-N) DOI: 10.7567/JJAP.50.07HD01(Journal) ========================================================== Created: 2023-01-05 12:13:12 ConfID: 6692916 CauseID: 1557138200 OtherID: 1363322935 JT: Japanese Journal of Applied Physics MD: Sado,50,11r,113001,2011,Magnetoelectric Effect of Fe70Pd30 Ferromagnetic Shape Memory Alloy Film: Lead Zirconate Titanate Trilayer Composites at Low and High Magnetic Field Frequencies DOI: 10.1143/JJAP.50.113001(Journal) (6692916-N) DOI: 10.7567/JJAP.50.113001(Journal) ========================================================== Created: 2023-01-05 12:13:09 ConfID: 6692917 CauseID: 1557138184 OtherID: 1363324209 JT: Japanese Journal of Applied Physics MD: Sekimoto,50,7r,77301,2011,Analysis of Rectangular AT-Cut Quartz Resonators with Soft Adhesive Layers Using Simplified Surface Tractions DOI: 10.1143/JJAP.50.077301(Journal) (6692917-N) DOI: 10.7567/JJAP.50.077301(Journal) ========================================================== Created: 2023-01-05 12:13:11 ConfID: 6692914 CauseID: 1557138197 OtherID: 1363324175 JT: Japanese Journal of Applied Physics MD: Kondou,50,7r,73002,2011,Electrical Investigation of Notch Width Dependence of Domain Wall Structure in Co/Ni Nanowires DOI: 10.1143/JJAP.50.073002(Journal) (6692914-N) DOI: 10.7567/JJAP.50.073002(Journal) ========================================================== Created: 2023-01-05 12:13:11 ConfID: 6692915 CauseID: 1557138198 OtherID: 1363323418 JT: Japanese Journal of Applied Physics MD: Lee,50,3r,32601,2011,Brightness Enhancement with a Fingerprint Chiral Nematic Liquid Crystal DOI: 10.1143/JJAP.50.032601(Journal) (6692915-N) DOI: 10.7567/JJAP.50.032601(Journal) ========================================================== Created: 2023-01-05 12:13:07 ConfID: 6692912 CauseID: 1557138188 OtherID: 1363324244 JT: Japanese Journal of Applied Physics MD: Otsu,50,7s,702,2011,Breathing-Mode Ceramic Element for Therapeutic Array Transducer DOI: 10.1143/JJAP.50.07HC02(Journal) (6692912-N) DOI: 10.7567/JJAP.50.07HC02(Journal) ========================================================== Created: 2023-01-05 12:13:10 ConfID: 6692913 CauseID: 1557138195 OtherID: 1363324233 JT: Japanese Journal of Applied Physics MD: Yamada,50,7s,706,2011,Noncontact Monitoring of Surface Temperature Distribution by Laser Ultrasound Scanning DOI: 10.1143/JJAP.50.07HC06(Journal) (6692913-N) DOI: 10.7567/JJAP.50.07HC06(Journal) ========================================================== Created: 2023-01-05 12:13:17 ConfID: 6692926 CauseID: 1557138216 OtherID: 1363324223 JT: Japanese Journal of Applied Physics MD: Noumura,50,7s,706,2011,High-Power Piezoelectric Characteristics at Continuous Driving of Bi4Ti3O12–SrBi4Ti4O15-Based Ferroelectric Ceramics DOI: 10.1143/JJAP.50.07HB06(Journal) (6692926-N) DOI: 10.7567/JJAP.50.07HB06(Journal) ========================================================== Created: 2023-01-05 12:13:18 ConfID: 6692927 CauseID: 1557138218 OtherID: 1363324409 JT: Japanese Journal of Applied Physics MD: Mizuguchi,50,8r,88003,2011,Preparation of Thin Crystals of FeTe1-xSx Using the Scotch-Tape Method DOI: 10.1143/JJAP.50.088003(Journal) (6692927-N) DOI: 10.7567/JJAP.50.088003(Journal) ========================================================== Created: 2023-01-05 12:13:17 ConfID: 6692924 CauseID: 1557138215 OtherID: 1363323415 JT: Japanese Journal of Applied Physics MD: Song,50,3r,32705,2011,Compensation of Incomplete Round Trip in an Herriott Multipass-Based Kerr-Lens Mode-Locked Ti:Sapphire Oscillator via an Output Coupler Position DOI: 10.1143/JJAP.50.032705(Journal) (6692924-N) DOI: 10.7567/JJAP.50.032705(Journal) ========================================================== Created: 2023-01-05 12:13:12 ConfID: 6692925 CauseID: 1557138199 OtherID: 1363322996 JT: Japanese Journal of Applied Physics MD: Yao,50,12r,121501,2011,Study on Occupation Behavior of Y2O3 in X8R Nonreducible BaTiO3-Based Dielectric Ceramics DOI: 10.1143/JJAP.50.121501(Journal) (6692925-N) DOI: 10.7567/JJAP.50.121501(Journal) ========================================================== Created: 2023-01-05 12:13:15 ConfID: 6692922 CauseID: 1557138212 OtherID: 1363324388 JT: Japanese Journal of Applied Physics MD: Ali,50,8r,85201,2011,Study of the Effect of Volume Fraction Concentration and Particle Materials on Thermal Conductivity and Thermal Diffusivity of Nanofluids DOI: 10.1143/JJAP.50.085201(Journal) (6692922-N) DOI: 10.7567/JJAP.50.085201(Journal) ========================================================== Created: 2023-01-05 12:13:16 ConfID: 6692923 CauseID: 1557138214 OtherID: 1363323425 JT: Japanese Journal of Applied Physics MD: Kyung,50,3r,35803,2011,Control of Structure and Film Thickness Using Spray Layer-by-Layer Method: Application to Double-Layer Anti-Reflection Film DOI: 10.1143/JJAP.50.035803(Journal) (6692923-N) DOI: 10.7567/JJAP.50.035803(Journal) ========================================================== Created: 2023-01-05 12:13:14 ConfID: 6692920 CauseID: 1557138203 OtherID: 1363324424 JT: Japanese Journal of Applied Physics MD: Ohmi,50,8s1,801,2011,Purified Silicon Film Formation from Metallurgical-Grade Silicon by Hydrogen-Plasma-Induced Chemical Transport DOI: 10.1143/JJAP.50.08JD01(Journal) (6692920-N) DOI: 10.7567/JJAP.50.08JD01(Journal) ========================================================== Created: 2023-01-05 12:13:15 ConfID: 6692921 CauseID: 1557138211 OtherID: 1363323423 JT: Japanese Journal of Applied Physics MD: Uršič,50,3r,35801,2011,The Effect of Poling on the Properties of 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 Ceramics DOI: 10.1143/JJAP.50.035801(Journal) (6692921-N) DOI: 10.7567/JJAP.50.035801(Journal) ========================================================== Created: 2023-01-05 12:12:40 ConfID: 6692870 CauseID: 1557138127 OtherID: 1363322989 JT: Japanese Journal of Applied Physics MD: Uchida,50,12r,120211,2011,Local Spin-Seebeck Effect Enabling Two-Dimensional Position Sensing DOI: 10.1143/JJAP.50.120211(Journal) (6692870-N) DOI: 10.7567/JJAP.50.120211(Journal) ========================================================== Created: 2023-01-05 12:12:43 ConfID: 6692871 CauseID: 1557138129 OtherID: 1363323241 JT: Japanese Journal of Applied Physics MD: Hoshino,50,1s2,110,2011,Effect of 2-Propanol Concentration in Electrolyte Solution on Polypyrrole Actuator Performance DOI: 10.1143/JJAP.50.01BG10(Journal) (6692871-N) DOI: 10.7567/JJAP.50.01BG10(Journal) ========================================================== Created: 2023-01-05 12:12:37 ConfID: 6692868 CauseID: 1557138122 OtherID: 1363324346 JT: Japanese Journal of Applied Physics MD: Hirata,50,8r,80217,2011,Fat Liquefaction of Adipose Tissue Using Atmospheric-Pressure Plasma Irradiation DOI: 10.1143/JJAP.50.080217(Journal) (6692868-N) DOI: 10.7567/JJAP.50.080217(Journal) ========================================================== Created: 2023-01-05 12:12:37 ConfID: 6692869 CauseID: 1557138123 OtherID: 1363324425 JT: Japanese Journal of Applied Physics MD: Tsuji,50,8s1,803,2011,New Simulation Approach to Controlling Plasma Uniformities DOI: 10.1143/JJAP.50.08JC03(Journal) (6692869-N) DOI: 10.7567/JJAP.50.08JC03(Journal) ========================================================== Created: 2023-01-05 12:12:36 ConfID: 6692866 CauseID: 1557138120 OtherID: 1363324355 JT: Japanese Journal of Applied Physics MD: Kawatsuki,50,8r,81608,2011,Control of the Molecularly Reoriented Direction in Surface Relief Holographic Gratings Using Photoreactive Liquid Crystalline Copolymers DOI: 10.1143/JJAP.50.081608(Journal) (6692866-N) DOI: 10.7567/JJAP.50.081608(Journal) ========================================================== Created: 2023-01-05 12:12:36 ConfID: 6692867 CauseID: 1557138121 OtherID: 1363324377 JT: Japanese Journal of Applied Physics MD: Chen,50,8r,85002,2011,Investigations of an Independent Double-Gated Polycrystalline Silicon Nanowire Thin Film Transistor for Nonvolatile Memory Operations DOI: 10.1143/JJAP.50.085002(Journal) (6692867-N) DOI: 10.7567/JJAP.50.085002(Journal) ========================================================== Created: 2023-01-05 12:12:38 ConfID: 6692864 CauseID: 1557138117 OtherID: 1363323233 JT: Japanese Journal of Applied Physics MD: Momose,50,1s2,109,2011,Cu2ZnSnS4 Thin Film Solar Cells Utilizing Sulfurization of Metallic Precursor Prepared by Simultaneous Sputtering of Metal Targets DOI: 10.1143/JJAP.50.01BG09(Journal) (6692864-N) DOI: 10.7567/JJAP.50.01BG09(Journal) ========================================================== Created: 2023-01-05 12:12:39 ConfID: 6692865 CauseID: 1557138119 OtherID: 1363323247 JT: Japanese Journal of Applied Physics MD: Kim,50,1s2,112,2011,Preparation and Characterization of CdSe-Decorated Multiwalled Carbon Nanotube Composites DOI: 10.1143/JJAP.50.01BJ12(Journal) (6692865-N) DOI: 10.7567/JJAP.50.01BJ12(Journal) ========================================================== Created: 2023-01-05 12:12:45 ConfID: 6692878 CauseID: 1557138135 OtherID: 1363324205 JT: Japanese Journal of Applied Physics MD: Kishii,50,7r,76502,2011,Tungsten Film Chemical Mechanical Polishing Using MnO2 Slurry DOI: 10.1143/JJAP.50.076502(Journal) (6692878-N) DOI: 10.7567/JJAP.50.076502(Journal) ========================================================== Created: 2023-01-05 12:12:49 ConfID: 6692879 CauseID: 1557138136 OtherID: 1363324187 JT: Japanese Journal of Applied Physics MD: Katayama,50,7r,75503,2011,Epitaxial Growth and Characterization of Rocksalt ZnO Thin Films with Low-Level NiO Alloying DOI: 10.1143/JJAP.50.075503(Journal) (6692879-N) DOI: 10.7567/JJAP.50.075503(Journal) ========================================================== Created: 2023-01-05 12:12:42 ConfID: 6692876 CauseID: 1557138133 OtherID: 1363324391 JT: Japanese Journal of Applied Physics MD: Hoshino,50,8r,85202,2011,Amperometric Biosensor Based on Carbon Nanotube Functionalized by Redox Plasma-Polymerized Film DOI: 10.1143/JJAP.50.085202(Journal) (6692876-N) DOI: 10.7567/JJAP.50.085202(Journal) ========================================================== Created: 2023-01-05 12:12:42 ConfID: 6692877 CauseID: 1557138134 OtherID: 1363323004 JT: Japanese Journal of Applied Physics MD: Tsutsumi,50,12r,121201,2011,Effect of Cu/In Ratio in Crystal Growth of CuInSe2 Thin Films Fabricated by Reduction and Selenization Using Cu and In2O3 Paste Materials DOI: 10.1143/JJAP.50.121201(Journal) (6692877-N) DOI: 10.7567/JJAP.50.121201(Journal) ========================================================== Created: 2023-01-05 12:12:41 ConfID: 6692874 CauseID: 1557138131 OtherID: 1363322980 JT: Japanese Journal of Applied Physics MD: Kang,50,12r,120208,2011,Low-Loss Amorphous Silicon Multilayer Waveguides Vertically Stacked on Silicon-on-Insulator Substrate DOI: 10.1143/JJAP.50.120208(Journal) (6692874-N) DOI: 10.7567/JJAP.50.120208(Journal) ========================================================== Created: 2023-01-05 12:12:41 ConfID: 6692875 CauseID: 1557138132 OtherID: 1363324365 JT: Japanese Journal of Applied Physics MD: Suemori,50,8r,81604,2011,Transient Drain Current Measurement for Polymer Transistor Containing Residual Bromine Atoms DOI: 10.1143/JJAP.50.081604(Journal) (6692875-N) DOI: 10.7567/JJAP.50.081604(Journal) ========================================================== Created: 2023-01-05 12:12:40 ConfID: 6692872 CauseID: 1557138128 OtherID: 1363324338 JT: Japanese Journal of Applied Physics MD: Nakamura,50,8r,81301,2011,Direct Synthesis and Enhanced Catalytic Activities of Platinum and Porous-Silicon Composites by Metal-Assisted Chemical Etching DOI: 10.1143/JJAP.50.081301(Journal) (6692872-N) DOI: 10.7567/JJAP.50.081301(Journal) ========================================================== Created: 2023-01-05 12:12:44 ConfID: 6692873 CauseID: 1557138130 OtherID: 1363324199 JT: Japanese Journal of Applied Physics MD: Yabuno,50,7r,76601,2011,Van der Pol-Type Self-Excited Microcantilever Probe for Atomic Force Microscopy DOI: 10.1143/JJAP.50.076601(Journal) (6692873-N) DOI: 10.7567/JJAP.50.076601(Journal) ========================================================== Created: 2023-01-05 12:12:52 ConfID: 6692886 CauseID: 1557138144 OtherID: 1363323451 JT: Japanese Journal of Applied Physics MD: Miyata,50,3r,36602,2011,Development of a Surface Magneto-Transport Measurement System with Multi-Probes and the In situ Measurement of Bi Nanofilms Prepared on Si(111)7×7 DOI: 10.1143/JJAP.50.036602(Journal) (6692886-N) DOI: 10.7567/JJAP.50.036602(Journal) ========================================================== Created: 2023-01-05 12:12:53 ConfID: 6692887 CauseID: 1557138145 OtherID: 1363324379 JT: Japanese Journal of Applied Physics MD: Kumada,50,8r,85503,2011,Tuning of Surface Roughness and Lattice Constant in MgO(111)/Al2O3(0001) Grown by Laser Energy Controlled Pulsed Laser Deposition DOI: 10.1143/JJAP.50.085503(Journal) (6692887-N) DOI: 10.7567/JJAP.50.085503(Journal) ========================================================== Created: 2023-01-05 12:12:51 ConfID: 6692884 CauseID: 1557138142 OtherID: 1363324191 JT: Japanese Journal of Applied Physics MD: Pandi,50,7r,75801,2011,Stress Wave Propagation in Ni–Mn–Ga Ferromagnetic Shape Memory Alloys DOI: 10.1143/JJAP.50.075801(Journal) (6692884-N) DOI: 10.7567/JJAP.50.075801(Journal) ========================================================== Created: 2023-01-05 12:12:52 ConfID: 6692885 CauseID: 1557138143 OtherID: 1363324376 JT: Japanese Journal of Applied Physics MD: Hiraiwa,50,8r,86502,2011,Power Spectrum of Smoothed Line-Edge and Line-Width Roughness DOI: 10.1143/JJAP.50.086502(Journal) (6692885-N) DOI: 10.7567/JJAP.50.086502(Journal) ========================================================== Created: 2023-01-05 12:12:50 ConfID: 6692882 CauseID: 1557138140 OtherID: 1363323385 JT: Japanese Journal of Applied Physics MD: Fukuda,50,3r,31301,2011,Thermoelectric Properties of Single-Crystalline SiC and Dense Sintered SiC for Self-Cooling Devices DOI: 10.1143/JJAP.50.031301(Journal) (6692882-N) DOI: 10.7567/JJAP.50.031301(Journal) ========================================================== Created: 2023-01-05 12:12:51 ConfID: 6692883 CauseID: 1557138141 OtherID: 1363324280 JT: Japanese Journal of Applied Physics MD: Ye,50,7s,718,2011,Development of an Acoustic Filter for Parametric Loudspeaker in Air DOI: 10.1143/JJAP.50.07HE18(Journal) (6692883-N) DOI: 10.7567/JJAP.50.07HE18(Journal) ========================================================== Created: 2023-01-05 12:12:49 ConfID: 6692880 CauseID: 1557138137 OtherID: 1363324189 JT: Japanese Journal of Applied Physics MD: Kim,50,7r,75103,2011,Optimum Thickness of Al2O3 Support Layer for Growth of Singlewalled Carbon Nanotubes DOI: 10.1143/JJAP.50.075103(Journal) (6692880-N) DOI: 10.7567/JJAP.50.075103(Journal) ========================================================== Created: 2023-01-05 12:12:50 ConfID: 6692881 CauseID: 1557138139 OtherID: 1363324269 JT: Japanese Journal of Applied Physics MD: Koyama,50,7s,726,2011,High-Speed Focus Scanning by an Acoustic Variable-Focus Liquid Lens DOI: 10.1143/JJAP.50.07HE26(Journal) (6692881-N) DOI: 10.7567/JJAP.50.07HE26(Journal) ========================================================== Created: 2023-01-05 12:12:57 ConfID: 6692894 CauseID: 1557138158 OtherID: 1363324263 JT: Japanese Journal of Applied Physics MD: Chen,50,7s,705,2011,Sensitivity Analysis of Lateral Field Excited Acoustic Wave Gas Sensors with Finite Element Method DOI: 10.1143/JJAP.50.07HD05(Journal) (6692894-N) DOI: 10.7567/JJAP.50.07HD05(Journal) ========================================================== Created: 2023-01-05 12:12:57 ConfID: 6692895 CauseID: 1557138159 OtherID: 1363324359 JT: Japanese Journal of Applied Physics MD: Eng,50,8r,84301,2011,A Three-Dimensional Simulation Study of Source/Drain-Tied Double-Gate Fin Field-Effect Transistor Design for 16-nm Half-Pitch Technology Generation and Beyond DOI: 10.1143/JJAP.50.084301(Journal) (6692895-N) DOI: 10.7567/JJAP.50.084301(Journal) ========================================================== Created: 2023-01-05 12:12:55 ConfID: 6692892 CauseID: 1557138155 OtherID: 1363323000 JT: Japanese Journal of Applied Physics MD: Yao,50,12r,121502,2011,Preparation and Characterization of X8R Fine-Grained Dielectric Ceramics DOI: 10.1143/JJAP.50.121502(Journal) (6692892-N) DOI: 10.7567/JJAP.50.121502(Journal) ========================================================== Created: 2023-01-05 12:12:56 ConfID: 6692893 CauseID: 1557138157 OtherID: 1363323344 JT: Japanese Journal of Applied Physics MD: Hsiung,50,3r,30208,2011,Ohmic Cathode Electrode on the Backside of m-Plane and (2021) Bulk GaN Substrates for Optical Device Applications DOI: 10.1143/JJAP.50.030208(Journal) (6692893-N) DOI: 10.7567/JJAP.50.030208(Journal) ========================================================== Created: 2023-01-05 12:12:55 ConfID: 6692890 CauseID: 1557138154 OtherID: 1363324195 JT: Japanese Journal of Applied Physics MD: Pyo,50,7r,76501,2011,Effects of Post-SiH4 and Plasma Treatments on Chemical Vapor Deposited Cu Seeds with Chemical Vapor Deposited TiN Barrier in Porous Low Dielectric Constant and Cu Integration DOI: 10.1143/JJAP.50.076501(Journal) (6692890-N) DOI: 10.7567/JJAP.50.076501(Journal) ========================================================== Created: 2023-01-05 12:12:56 ConfID: 6692891 CauseID: 1557138156 OtherID: 1363323384 JT: Japanese Journal of Applied Physics MD: Ryczko,50,3r,31202,2011,Effect of Annealing-Induced Interdiffusion on the Electronic Structure of Mid Infrared Emitting GaInAsSb/AlGaInAsSb Quantum Wells DOI: 10.1143/JJAP.50.031202(Journal) (6692891-N) DOI: 10.7567/JJAP.50.031202(Journal) ========================================================== Created: 2023-01-05 12:12:54 ConfID: 6692888 CauseID: 1557138146 OtherID: 1363324203 JT: Japanese Journal of Applied Physics MD: Lee,50,7r,76504,2011,Improved Output Power of GaN-Based Vertical Light Emitting Diodes Fabricated with Current Blocking Region Formed by O2 Plasma Treatment DOI: 10.1143/JJAP.50.076504(Journal) (6692888-N) DOI: 10.7567/JJAP.50.076504(Journal) ========================================================== Created: 2023-01-05 12:12:54 ConfID: 6692889 CauseID: 1557138147 OtherID: 1363324342 JT: Japanese Journal of Applied Physics MD: Li,50,8r,80212,2011,Improvement of Performance in p-Side Down InGaN/GaN Light-Emitting Diodes with Graded Electron Blocking Layer DOI: 10.1143/JJAP.50.080212(Journal) (6692889-N) DOI: 10.7567/JJAP.50.080212(Journal) ========================================================== Created: 2023-01-05 12:15:05 ConfID: 6693094 CauseID: 1557138441 OtherID: 1363324364 JT: Japanese Journal of Applied Physics MD: Tahara,50,8r,81605,2011,Magnetic Field Effects on Photoelectrochemical Reactions of Porphyrin–Viologen Linked Compounds in an Ionic Liquid DOI: 10.1143/JJAP.50.081605(Journal) (6693094-N) DOI: 10.7567/JJAP.50.081605(Journal) ========================================================== Created: 2023-01-05 12:15:06 ConfID: 6693095 CauseID: 1557138442 OtherID: 1363324483 JT: Japanese Journal of Applied Physics MD: Lu,50,8s3,801,2011,Disappearance of Lowest-Order Transmission Resonance in Ag Film of Critical Thickness DOI: 10.1143/JJAP.50.08LB01(Journal) (6693095-N) DOI: 10.7567/JJAP.50.08LB01(Journal) ========================================================== Created: 2023-01-05 12:15:03 ConfID: 6693092 CauseID: 1557138436 OtherID: 1363324509 JT: Japanese Journal of Applied Physics MD: Lukács,50,9r,91401,2011,Photoinduced Volume Changes of Obliquely and Flatly Deposited Amorphous AsSe Films Universal Description of the Kinetics DOI: 10.1143/JJAP.50.091401(Journal) (6693092-N) DOI: 10.7567/JJAP.50.091401(Journal) ========================================================== Created: 2023-01-05 12:15:04 ConfID: 6693093 CauseID: 1557138439 OtherID: 1363324627 JT: Japanese Journal of Applied Physics MD: Fukamachi,50,9s2,903,2011,Effect of Stress Engineering on the Electrical Properties of BaTiO3 Thin Film DOI: 10.1143/JJAP.50.09NA03(Journal) (6693093-N) DOI: 10.7567/JJAP.50.09NA03(Journal) ========================================================== Created: 2023-01-05 12:15:02 ConfID: 6693090 CauseID: 1557138434 OtherID: 1363324392 JT: Japanese Journal of Applied Physics MD: Lee,50,8r,87301,2011,Development of the Large Scanning Mirror Using Fe-Based Metallic Glass Ribbon DOI: 10.1143/JJAP.50.087301(Journal) (6693090-N) DOI: 10.7567/JJAP.50.087301(Journal) ========================================================== Created: 2023-01-05 12:15:03 ConfID: 6693091 CauseID: 1557138435 OtherID: 1363324531 JT: Japanese Journal of Applied Physics MD: Kadotani,50,9r,94101,2011,Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.50.094101(Journal) (6693091-N) DOI: 10.7567/JJAP.50.094101(Journal) ========================================================== Created: 2023-01-05 12:15:01 ConfID: 6693088 CauseID: 1557138432 OtherID: 1363324345 JT: Japanese Journal of Applied Physics MD: Akiyama,50,8r,80216,2011,Stability of Carbon Incorpoated Semipolar GaN(1101) Surface DOI: 10.1143/JJAP.50.080216(Journal) (6693088-N) DOI: 10.7567/JJAP.50.080216(Journal) ========================================================== Created: 2023-01-05 12:15:02 ConfID: 6693089 CauseID: 1557138433 OtherID: 1363324371 JT: Japanese Journal of Applied Physics MD: Tanaka,50,8r,82304,2011,Demonstration of ZnTe1-xOx Intermediate Band Solar Cell DOI: 10.1143/JJAP.50.082304(Journal) (6693089-N) DOI: 10.7567/JJAP.50.082304(Journal) ========================================================== Created: 2023-01-05 12:15:13 ConfID: 6693102 CauseID: 1557138449 OtherID: 1363323021 JT: Japanese Journal of Applied Physics MD: Iwai,50,12r,122702,2011,Laser Wavelength Dependence on Photochemical Surface and Interface Modifications of Aluminum Thin Films on Silica Glass DOI: 10.1143/JJAP.50.122702(Journal) (6693102-N) DOI: 10.7567/JJAP.50.122702(Journal) ========================================================== Created: 2023-01-05 12:15:14 ConfID: 6693103 CauseID: 1557138450 OtherID: 1363322987 JT: Japanese Journal of Applied Physics MD: Inazu,50,12r,122101,2011,Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes DOI: 10.1143/JJAP.50.122101(Journal) (6693103-N) DOI: 10.7567/JJAP.50.122101(Journal) ========================================================== Created: 2023-01-05 12:15:08 ConfID: 6693100 CauseID: 1557138447 OtherID: 1363324572 JT: Japanese Journal of Applied Physics MD: Park,50,9r,96504,2011,Thin Film Transistor Using Amorphous InGaZnO Films as Both Channel and Source/Drain Electrodes DOI: 10.1143/JJAP.50.096504(Journal) (6693100-N) DOI: 10.7567/JJAP.50.096504(Journal) ========================================================== Created: 2023-01-05 12:15:09 ConfID: 6693101 CauseID: 1557138448 OtherID: 1363324479 JT: Japanese Journal of Applied Physics MD: Shahed,50,8s3,805,2011,Scanning Tunneling Microscope Study of Surface Morphology Variation of CeO2(111) with Changing Annealing Condition DOI: 10.1143/JJAP.50.08LB05(Journal) (6693101-N) DOI: 10.7567/JJAP.50.08LB05(Journal) ========================================================== Created: 2023-01-05 12:15:07 ConfID: 6693098 CauseID: 1557138445 OtherID: 1363324522 JT: Japanese Journal of Applied Physics MD: Li,50,9r,93101,2011,Suppression of Precipitates in the La2-xSrxCuO4 Films Grown on LaSrAlO4 Substrates by Introducing Homoepitaxial Layer DOI: 10.1143/JJAP.50.093101(Journal) (6693098-N) DOI: 10.7567/JJAP.50.093101(Journal) ========================================================== Created: 2023-01-05 12:15:08 ConfID: 6693099 CauseID: 1557138446 OtherID: 1363324547 JT: Japanese Journal of Applied Physics MD: Wu,50,9r,95003,2011,Carrier Transport in Volatile Memory Device with SnO2 Quantum Dots Embedded in a Polyimide Layer DOI: 10.1143/JJAP.50.095003(Journal) (6693099-N) DOI: 10.7567/JJAP.50.095003(Journal) ========================================================== Created: 2023-01-05 12:14:58 ConfID: 6693096 CauseID: 1557138426 OtherID: 1363324468 JT: Japanese Journal of Applied Physics MD: Gong,50,8s2,801,2011,SiNx Double Layer Antireflection Coating by Plasma-Enhanced Chemical Vapor Deposition for Single Crystalline Silicon Solar Cells DOI: 10.1143/JJAP.50.08KE01(Journal) (6693096-N) DOI: 10.7567/JJAP.50.08KE01(Journal) ========================================================== Created: 2023-01-05 12:15:07 ConfID: 6693097 CauseID: 1557138444 OtherID: 1363324491 JT: Japanese Journal of Applied Physics MD: Hara,50,8s3,803,2011,Study of Initial Growth Layer of GaSb on Si(111) by Scanning Tunneling Microscopy DOI: 10.1143/JJAP.50.08LB03(Journal) (6693097-N) DOI: 10.7567/JJAP.50.08LB03(Journal) ========================================================== Created: 2023-01-05 12:15:12 ConfID: 6693110 CauseID: 1557138457 OtherID: 1363322997 JT: Japanese Journal of Applied Physics MD: Chen,50,12r,121802,2011,Analysis of Peeling Mechanism in Annealed Tungsten Silicide Thin Films DOI: 10.1143/JJAP.50.121802(Journal) (6693110-N) DOI: 10.7567/JJAP.50.121802(Journal) ========================================================== Created: 2023-01-05 12:15:12 ConfID: 6693111 CauseID: 1557138456 OtherID: 1363324481 JT: Japanese Journal of Applied Physics MD: Fujita,50,8s3,804,2011,In situ Observation of Surface Reconstruction of Si(001) with Stress/Strain Field Scanning Probe Microscopy DOI: 10.1143/JJAP.50.08LB04(Journal) (6693111-N) DOI: 10.7567/JJAP.50.08LB04(Journal) ========================================================== Created: 2023-01-05 12:15:11 ConfID: 6693108 CauseID: 1557138455 OtherID: 1363324414 JT: Japanese Journal of Applied Physics MD: Shao,50,8s1,803,2011,Immobilization of L-Cysteine onto Poly(ethylene glycol) Polymerized by Surface-Wave Plasma DOI: 10.1143/JJAP.50.08JF03(Journal) (6693108-N) DOI: 10.7567/JJAP.50.08JF03(Journal) ========================================================== Created: 2023-01-05 12:15:06 ConfID: 6693109 CauseID: 1557138443 OtherID: 1363323007 JT: Japanese Journal of Applied Physics MD: Nakazato,50,12r,122202,2011,Evaluation of Soft X-ray Laser with In situ Imaging Device of High Spatial Resolution ZnO Scintillator DOI: 10.1143/JJAP.50.122202(Journal) (6693109-N) DOI: 10.7567/JJAP.50.122202(Journal) ========================================================== Created: 2023-01-05 12:15:14 ConfID: 6693106 CauseID: 1557138452 OtherID: 1363324436 JT: Japanese Journal of Applied Physics MD: David,50,8s1,811,2011,Iron-Based Nanopowders Containing α-Fe, Fe3C, and γ-Fe Particles Synthesised in Microwave Torch Plasma and Investigated with Mössbauer Spectroscopy DOI: 10.1143/JJAP.50.08JF11(Journal) (6693106-N) DOI: 10.7567/JJAP.50.08JF11(Journal) ========================================================== Created: 2023-01-05 12:15:10 ConfID: 6693107 CauseID: 1557138454 OtherID: 1363324626 JT: Japanese Journal of Applied Physics MD: Sakai,50,9s2,902,2011,Preparation of Textured BaTiO3 Thick Films by Screen Printing DOI: 10.1143/JJAP.50.09NA02(Journal) (6693107-N) DOI: 10.7567/JJAP.50.09NA02(Journal) ========================================================== Created: 2023-01-05 12:15:04 ConfID: 6693104 CauseID: 1557138437 OtherID: 1363324490 JT: Japanese Journal of Applied Physics MD: Toyoda,50,8s3,801,2011,Atomic Force Microscopy to Study Mechanics of Living Mitotic Mammalian Cells DOI: 10.1143/JJAP.50.08LA01(Journal) (6693104-N) DOI: 10.7567/JJAP.50.08LA01(Journal) ========================================================== Created: 2023-01-05 12:15:10 ConfID: 6693105 CauseID: 1557138453 OtherID: 1363324380 JT: Japanese Journal of Applied Physics MD: Hsieh,50,8r,87202,2011,Deflections of Magnetic Actuators with Different Widths of Microcantilevers DOI: 10.1143/JJAP.50.087202(Journal) (6693105-N) DOI: 10.7567/JJAP.50.087202(Journal) ========================================================== Created: 2023-01-05 12:15:17 ConfID: 6693118 CauseID: 1557138464 OtherID: 1363324478 JT: Japanese Journal of Applied Physics MD: Morita,50,8s3,812,2011,Fabrication of Quartz Cantilevers for Small-Amplitude Dynamic Force Microscopy Using an Optical Deflection Sensor DOI: 10.1143/JJAP.50.08LB12(Journal) (6693118-N) DOI: 10.7567/JJAP.50.08LB12(Journal) ========================================================== Created: 2023-01-05 12:15:18 ConfID: 6693119 CauseID: 1557138465 OtherID: 1363324381 JT: Japanese Journal of Applied Physics MD: Shimizu,50,8r,85601,2011,Effect of Substrate Surface Finish and Proximity Distance on Compositional Shift of InGaAsP Metal–Organic Vapor Phase Epitaxy in a High-Speed-Rotation Multiple-Substrate Reactor DOI: 10.1143/JJAP.50.085601(Journal) (6693119-N) DOI: 10.7567/JJAP.50.085601(Journal) ========================================================== Created: 2023-01-05 12:15:16 ConfID: 6693116 CauseID: 1557138461 OtherID: 1363322991 JT: Japanese Journal of Applied Physics MD: Chou,50,12r,121801,2011,Unipolar Ni/GeOx/PbZr0.5Ti0.5O3/TaN Resistive Switching Memory DOI: 10.1143/JJAP.50.121801(Journal) (6693116-N) DOI: 10.7567/JJAP.50.121801(Journal) ========================================================== Created: 2023-01-05 12:15:16 ConfID: 6693117 CauseID: 1557138462 OtherID: 1363324394 JT: Japanese Journal of Applied Physics MD: Wake,50,8s1,807,2011,Optical Diagnostics of Breakdown Phase of Pulsed N2/He Atmospheric-Pressure Microhollow Cathode Discharge Plasma DOI: 10.1143/JJAP.50.08JB07(Journal) (6693117-N) DOI: 10.7567/JJAP.50.08JB07(Journal) ========================================================== Created: 2023-01-05 12:15:15 ConfID: 6693115 CauseID: 1557138460 OtherID: 1363322999 JT: Japanese Journal of Applied Physics MD: Lei,50,12r,122102,2011,Effect of Charge Carrier Transport Property and Energy Level of Host Material on Phosphorescent White Organic Light-Emitting Device DOI: 10.1143/JJAP.50.122102(Journal) (6693115-N) DOI: 10.7567/JJAP.50.122102(Journal) ========================================================== Created: 2023-01-05 12:15:13 ConfID: 6693112 CauseID: 1557138458 OtherID: 1363324390 JT: Japanese Journal of Applied Physics MD: Shimizu,50,8r,85701,2011,Schottky-Barrier-Induced AC Surface Photovoltages in Au-Precipitated n-Type Si(001) Surfaces DOI: 10.1143/JJAP.50.085701(Journal) (6693112-N) DOI: 10.7567/JJAP.50.085701(Journal) ========================================================== Created: 2023-01-05 12:15:19 ConfID: 6693113 CauseID: 1557138459 OtherID: 1363324617 JT: Japanese Journal of Applied Physics MD: Ogasawara,50,9s1,901,2011,Sixteen-Layer Write Once Disc with a Separated Guide Layer DOI: 10.1143/JJAP.50.09MF01(Journal) (6693113-N) DOI: 10.7567/JJAP.50.09MF01(Journal) ========================================================== Created: 2023-01-05 12:14:48 ConfID: 6693062 CauseID: 1557138401 OtherID: 1363324328 JT: Japanese Journal of Applied Physics MD: Mizuno,50,7s,719,2011,Effect of Boundary Condition on the Two-Wave Propagation in Cancellous Bone DOI: 10.1143/JJAP.50.07HF19(Journal) (6693062-N) DOI: 10.7567/JJAP.50.07HF19(Journal) ========================================================== Created: 2023-01-05 12:14:49 ConfID: 6693063 CauseID: 1557138402 OtherID: 1363324357 JT: Japanese Journal of Applied Physics MD: Oshimura,50,8r,84102,2011,AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage DOI: 10.1143/JJAP.50.084102(Journal) (6693063-N) DOI: 10.7567/JJAP.50.084102(Journal) ========================================================== Created: 2023-01-05 12:14:43 ConfID: 6693060 CauseID: 1557138393 OtherID: 1363324348 JT: Japanese Journal of Applied Physics MD: Kaneko,50,8r,80220,2011,Orientation and Community Size Dependences of Pulsatile Electrical Field Stimulation on Lined-Up and Rod-Shaped Single Cardiomyocytes DOI: 10.1143/JJAP.50.080220(Journal) (6693060-N) DOI: 10.7567/JJAP.50.080220(Journal) ========================================================== Created: 2023-01-05 12:14:43 ConfID: 6693061 CauseID: 1557138399 OtherID: 1363324469 JT: Japanese Journal of Applied Physics MD: Park,50,8s2,801,2011,Etch Properties of TiN Thin Film in Metal–Insulator–Metal Capacitor Using Inductively Coupled Plasma DOI: 10.1143/JJAP.50.08KC01(Journal) (6693061-N) DOI: 10.7567/JJAP.50.08KC01(Journal) ========================================================== Created: 2023-01-05 12:14:40 ConfID: 6693058 CauseID: 1557138394 OtherID: 1363324297 JT: Japanese Journal of Applied Physics MD: Yamayoshi,50,7s,728,2011,Improvement of Characteristics of Noncontact Ultrasonic Motor Using Acoustically Coupled Two Air Gaps DOI: 10.1143/JJAP.50.07HE28(Journal) (6693058-N) DOI: 10.7567/JJAP.50.07HE28(Journal) ========================================================== Created: 2023-01-05 12:14:41 ConfID: 6693059 CauseID: 1557138395 OtherID: 1363324360 JT: Japanese Journal of Applied Physics MD: Iwai,50,8r,81602,2011,Metal Deposition Selectivity Based on Photochromism of Diarylethene Film in Intermediate Vacuum DOI: 10.1143/JJAP.50.081602(Journal) (6693059-N) DOI: 10.7567/JJAP.50.081602(Journal) ========================================================== Created: 2023-01-05 12:14:37 ConfID: 6693056 CauseID: 1557138390 OtherID: 1363322916 JT: Japanese Journal of Applied Physics MD: Shimizu,50,11r,111301,2011,Anomalous Oxide Charge Variation Identified by Alternating Current Surface Photovoltage Method in Cr-Aqueous-Solution-Rinsed p-Type Si(001) Wafers Exposed to Air DOI: 10.1143/JJAP.50.111301(Journal) (6693056-N) DOI: 10.7567/JJAP.50.111301(Journal) ========================================================== Created: 2023-01-05 12:14:38 ConfID: 6693057 CauseID: 1557138391 OtherID: 1363324343 JT: Japanese Journal of Applied Physics MD: Que,50,8r,80207,2011,Terahertz Emission Enhancement in InAs Thin Films Using a Silicon Lens Coupler DOI: 10.1143/JJAP.50.080207(Journal) (6693057-N) DOI: 10.7567/JJAP.50.080207(Journal) ========================================================== Created: 2023-01-05 12:14:50 ConfID: 6693070 CauseID: 1557138410 OtherID: 1363322998 JT: Japanese Journal of Applied Physics MD: Wu,50,12r,121803,2011,Investigation of the Galvanic Effect between RuN Barriers and Cu Seed Layers DOI: 10.1143/JJAP.50.121803(Journal) (6693070-N) DOI: 10.7567/JJAP.50.121803(Journal) ========================================================== Created: 2023-01-05 12:14:51 ConfID: 6693071 CauseID: 1557138412 OtherID: 1363322992 JT: Japanese Journal of Applied Physics MD: Seki,50,12r,121602,2011,Extreme Ultraviolet Resist Fabricated Using Water Wheel-Like Cyclic Oligomer with Pendant Adamantyl Ester Groups DOI: 10.1143/JJAP.50.121602(Journal) (6693071-N) DOI: 10.7567/JJAP.50.121602(Journal) ========================================================== Created: 2023-01-05 12:14:47 ConfID: 6693068 CauseID: 1557138407 OtherID: 1363324375 JT: Japanese Journal of Applied Physics MD: Kwon,50,8r,85502,2011,Photocatalytic Functional Coating of TiO2 Thin Film Deposited by Cyclic Plasma Chemical Vapor Deposition at Atmospheric Pressure DOI: 10.1143/JJAP.50.085502(Journal) (6693068-N) DOI: 10.7567/JJAP.50.085502(Journal) ========================================================== Created: 2023-01-05 12:14:48 ConfID: 6693069 CauseID: 1557138408 OtherID: 1363324502 JT: Japanese Journal of Applied Physics MD: Watanabe,50,8s3,818,2011,Development of Novel System Combining Scanning Tunneling Microscope-Based Cathodoluminescence and Electroluminescence Nanospectroscopies DOI: 10.1143/JJAP.50.08LB18(Journal) (6693069-N) DOI: 10.7567/JJAP.50.08LB18(Journal) ========================================================== Created: 2023-01-05 12:14:46 ConfID: 6693066 CauseID: 1557138405 OtherID: 1363324455 JT: Japanese Journal of Applied Physics MD: Motrescu,50,8s1,807,2011,Effects of Nitrogen and Oxygen Radicals on Low-Temperature Bio-Molecule Processing DOI: 10.1143/JJAP.50.08JF07(Journal) (6693066-N) DOI: 10.7567/JJAP.50.08JF07(Journal) ========================================================== Created: 2023-01-05 12:14:47 ConfID: 6693067 CauseID: 1557138406 OtherID: 1363324361 JT: Japanese Journal of Applied Physics MD: Liou,50,8r,82502,2011,Fabrication of Wide-Angle and Wideband Visible Antireflection Coating on Flexible Poly(ether sulfone) Substrate Using Ion-Assisted Deposition DOI: 10.1143/JJAP.50.082502(Journal) (6693067-N) DOI: 10.7567/JJAP.50.082502(Journal) ========================================================== Created: 2023-01-05 12:14:45 ConfID: 6693064 CauseID: 1557138403 OtherID: 1363324476 JT: Japanese Journal of Applied Physics MD: Ohmine,50,8s2,803,2011,Estimation of Ion/Radical Flux from Mask Selectivity and Etching Rate Calibrated by Topography Simulation DOI: 10.1143/JJAP.50.08KB03(Journal) (6693064-N) DOI: 10.7567/JJAP.50.08KB03(Journal) ========================================================== Created: 2023-01-05 12:14:45 ConfID: 6693065 CauseID: 1557138404 OtherID: 1363324467 JT: Japanese Journal of Applied Physics MD: Woo,50,8s2,802,2011,Etch Characterization of TiO2 Thin Films Using Metal–Insulator–Metal Capacitor in Adaptively Coupled Plasma DOI: 10.1143/JJAP.50.08KC02(Journal) (6693065-N) DOI: 10.7567/JJAP.50.08KC02(Journal) ========================================================== Created: 2023-01-05 12:14:55 ConfID: 6693078 CauseID: 1557138420 OtherID: 1363324528 JT: Japanese Journal of Applied Physics MD: Kashiwagi,50,9r,92501,2011,Fiber Transmission Characteristics of Parabolic Pulses Generated by Optical Pulse Synthesizer DOI: 10.1143/JJAP.50.092501(Journal) (6693078-N) DOI: 10.7567/JJAP.50.092501(Journal) ========================================================== Created: 2023-01-05 12:14:54 ConfID: 6693079 CauseID: 1557138417 OtherID: 1363324465 JT: Japanese Journal of Applied Physics MD: Tsuda,50,8s2,802,2011,Molecular Dynamics Analysis of the Formation of Surface Roughness during Si Etching in Chlorine-Based Plasmas DOI: 10.1143/JJAP.50.08KB02(Journal) (6693079-N) DOI: 10.7567/JJAP.50.08KB02(Journal) ========================================================== Created: 2023-01-05 12:14:53 ConfID: 6693076 CauseID: 1557138416 OtherID: 1363324503 JT: Japanese Journal of Applied Physics MD: Seike,50,9r,90204,2011,The Magnetic Properties of Hole-Doped MgO DOI: 10.1143/JJAP.50.090204(Journal) (6693076-N) DOI: 10.7567/JJAP.50.090204(Journal) ========================================================== Created: 2023-01-05 12:14:55 ConfID: 6693077 CauseID: 1557138419 OtherID: 1363324347 JT: Japanese Journal of Applied Physics MD: Kondo,50,8r,81101,2011,The Observation of “Conduction Spot” on NiO Resistance Random Access Memory DOI: 10.1143/JJAP.50.081101(Journal) (6693077-N) DOI: 10.7567/JJAP.50.081101(Journal) ========================================================== Created: 2023-01-05 12:14:52 ConfID: 6693074 CauseID: 1557138414 OtherID: 1363324530 JT: Japanese Journal of Applied Physics MD: Ryzhii,50,9r,94001,2011,Effect of Heating and Cooling of Photogenerated Electron–Hole Plasma in Optically Pumped Graphene on Population Inversion DOI: 10.1143/JJAP.50.094001(Journal) (6693074-N) DOI: 10.7567/JJAP.50.094001(Journal) ========================================================== Created: 2023-01-05 12:14:53 ConfID: 6693075 CauseID: 1557138415 OtherID: 1363324472 JT: Japanese Journal of Applied Physics MD: Ito,50,8s2,802,2011,Si Recess of Polycrystalline Silicon Gate Etching: Damage Enhanced by Ion Assisted Oxygen Diffusion DOI: 10.1143/JJAP.50.08KD02(Journal) (6693075-N) DOI: 10.7567/JJAP.50.08KD02(Journal) ========================================================== Created: 2023-01-05 12:14:52 ConfID: 6693072 CauseID: 1557138413 OtherID: 1363324303 JT: Japanese Journal of Applied Physics MD: Saito,50,7s,710,2011,Estimation of Arterial Stiffness by Time–Frequency Analysis of Pulse Wave DOI: 10.1143/JJAP.50.07HF10(Journal) (6693072-N) DOI: 10.7567/JJAP.50.07HF10(Journal) ========================================================== Created: 2023-01-05 12:14:50 ConfID: 6693073 CauseID: 1557138411 OtherID: 1363324475 JT: Japanese Journal of Applied Physics MD: Honda,50,8s2,806,2011,Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films DOI: 10.1143/JJAP.50.08KD06(Journal) (6693073-N) DOI: 10.7567/JJAP.50.08KD06(Journal) ========================================================== Created: 2023-01-05 12:15:00 ConfID: 6693086 CauseID: 1557138430 OtherID: 1363324363 JT: Japanese Journal of Applied Physics MD: Rattanapan,50,8r,82301,2011,Improvement of Rear Surface Passivation Quality in p-Type Silicon Heterojunction Solar Cells Using Boron-Doped Microcrystalline Silicon Oxide DOI: 10.1143/JJAP.50.082301(Journal) (6693086-N) DOI: 10.7567/JJAP.50.082301(Journal) ========================================================== Created: 2023-01-05 12:15:01 ConfID: 6693087 CauseID: 1557138431 OtherID: 1363322929 JT: Japanese Journal of Applied Physics MD: Furuhashi,50,11r,115701,2011,Molecular Orientation of the Decyl Monolayer Chemically Bonded to Si(111) Determined by Angle-Dependent Transmission Infrared Spectroscopy DOI: 10.1143/JJAP.50.115701(Journal) (6693087-N) DOI: 10.7567/JJAP.50.115701(Journal) ========================================================== Created: 2023-01-05 12:14:58 ConfID: 6693084 CauseID: 1557138425 OtherID: 1363324512 JT: Japanese Journal of Applied Physics MD: Chen,50,9r,91102,2011,Crystalline In–Ga–Zn–O Density of States and Energy Band Structure Calculation Using Density Function Theory DOI: 10.1143/JJAP.50.091102(Journal) (6693084-N) DOI: 10.7567/JJAP.50.091102(Journal) ========================================================== Created: 2023-01-05 12:14:59 ConfID: 6693085 CauseID: 1557138427 OtherID: 1363324492 JT: Japanese Journal of Applied Physics MD: Yamada,50,8s3,803,2011,Electric Field Control of Fe Nano Magnets: Towards Metallic Nonvolatile Data Storage Devices DOI: 10.1143/JJAP.50.08LA03(Journal) (6693085-N) DOI: 10.7567/JJAP.50.08LA03(Journal) ========================================================== Created: 2023-01-05 12:14:57 ConfID: 6693082 CauseID: 1557138423 OtherID: 1363324336 JT: Japanese Journal of Applied Physics MD: Iwata,50,8r,81102,2011,Effects of Heat Treatment on the Resistive Switching Characteristics of Pt/NiO/Pt Stack Structures DOI: 10.1143/JJAP.50.081102(Journal) (6693082-N) DOI: 10.7567/JJAP.50.081102(Journal) ========================================================== Created: 2023-01-05 12:14:57 ConfID: 6693083 CauseID: 1557138424 OtherID: 1363322936 JT: Japanese Journal of Applied Physics MD: Rokuta,50,11r,115001,2011,Field Emission Microscopy Study of Au-Covered Nanopyramids with 211-Facet Sides Grown on Blunt W Tips via Assistive Remolding Treatment DOI: 10.1143/JJAP.50.115001(Journal) (6693083-N) DOI: 10.7567/JJAP.50.115001(Journal) ========================================================== Created: 2023-01-05 12:14:56 ConfID: 6693080 CauseID: 1557138421 OtherID: 1363322995 JT: Japanese Journal of Applied Physics MD: Yoshida,50,12r,120210,2011,Electron Transport Properties in HSi(OC2H5)3 Vapor DOI: 10.1143/JJAP.50.120210(Journal) (6693080-N) DOI: 10.7567/JJAP.50.120210(Journal) ========================================================== Created: 2023-01-05 12:14:56 ConfID: 6693081 CauseID: 1557138422 OtherID: 1363324473 JT: Japanese Journal of Applied Physics MD: Kamei,50,8s2,805,2011,Comparative Study of Plasma-Charging Damage in High-k Dielectric and p–n Junction and Their Effects on Off-State Leakage Current of Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.50.08KD05(Journal) (6693081-N) DOI: 10.7567/JJAP.50.08KD05(Journal) ========================================================== Created: 2023-01-05 12:14:22 ConfID: 6693030 CauseID: 1557138355 OtherID: 1363324335 JT: Japanese Journal of Applied Physics MD: Chen,50,8r,81202,2011,k·p Zincblende Hamiltonian and Optical Matrix with Bulk Inversion Asymmetry DOI: 10.1143/JJAP.50.081202(Journal) (6693030-N) DOI: 10.7567/JJAP.50.081202(Journal) ========================================================== Created: 2023-01-05 12:14:23 ConfID: 6693031 CauseID: 1557138356 OtherID: 1363324421 JT: Japanese Journal of Applied Physics MD: Ohshima,50,8s1,809,2011,Effect of Oxygen Gas Pressure on Electrical, Optical, and Structural Properties of Al-Doped ZnO Thin Films Fabricated by Pulsed Laser Deposition for Use as Transparent Electrodes in All-Solid-State Electrochromic Devices DOI: 10.1143/JJAP.50.08JD09(Journal) (6693031-N) DOI: 10.7567/JJAP.50.08JD09(Journal) ========================================================== Created: 2023-01-05 12:14:21 ConfID: 6693028 CauseID: 1557138353 OtherID: 1363322941 JT: Japanese Journal of Applied Physics MD: Nakamine,50,11r,115002,2011,Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching DOI: 10.1143/JJAP.50.115002(Journal) (6693028-N) DOI: 10.7567/JJAP.50.115002(Journal) ========================================================== Created: 2023-01-05 12:14:22 ConfID: 6693029 CauseID: 1557138354 OtherID: 1363322924 JT: Japanese Journal of Applied Physics MD: Matoba,50,11r,112201,2011,Absolute Detection Efficiency of a High-Sensitivity Microchannel Plate with Tapered Pores DOI: 10.1143/JJAP.50.112201(Journal) (6693029-N) DOI: 10.7567/JJAP.50.112201(Journal) ========================================================== Created: 2023-01-05 12:14:20 ConfID: 6693026 CauseID: 1557138351 OtherID: 1363322910 JT: Japanese Journal of Applied Physics MD: Huang,50,11r,110202,2011,Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors DOI: 10.1143/JJAP.50.110202(Journal) (6693026-N) DOI: 10.7567/JJAP.50.110202(Journal) ========================================================== Created: 2023-01-05 12:14:21 ConfID: 6693027 CauseID: 1557138352 OtherID: 1363324286 JT: Japanese Journal of Applied Physics MD: Yasuda,50,7s,723,2011,Ultrasonic Atomization Amount for Different Frequencies DOI: 10.1143/JJAP.50.07HE23(Journal) (6693027-N) DOI: 10.7567/JJAP.50.07HE23(Journal) ========================================================== Created: 2023-01-05 12:14:20 ConfID: 6693024 CauseID: 1557138350 OtherID: 1363324333 JT: Japanese Journal of Applied Physics MD: Alam,50,8r,80213,2011,First-Principles Calculation of the Interlayer Distance of the Two-Layer Graphene DOI: 10.1143/JJAP.50.080213(Journal) (6693024-N) DOI: 10.7567/JJAP.50.080213(Journal) ========================================================== Created: 2023-01-05 12:14:19 ConfID: 6693025 CauseID: 1557138349 OtherID: 1363324419 JT: Japanese Journal of Applied Physics MD: Morita,50,8s1,802,2011,Chemical Activity of Oxygen Atoms in Magnetron Sputter-Deposited ZnO Films during Film Growth DOI: 10.1143/JJAP.50.08JD02(Journal) (6693025-N) DOI: 10.7567/JJAP.50.08JD02(Journal) ========================================================== Created: 2023-01-05 12:14:26 ConfID: 6693038 CauseID: 1557138364 OtherID: 1363324415 JT: Japanese Journal of Applied Physics MD: Lorusso,50,8s1,807,2011,Deposition of MgF2 Thin Films by Pulsed Laser Ablation Technique DOI: 10.1143/JJAP.50.08JD07(Journal) (6693038-N) DOI: 10.7567/JJAP.50.08JD07(Journal) ========================================================== Created: 2023-01-05 12:14:27 ConfID: 6693039 CauseID: 1557138365 OtherID: 1363324452 JT: Japanese Journal of Applied Physics MD: Zhao,50,8s1,805,2011,Effects of N2–O2 Gas Mixture Ratio on Microorganism Inactivation in Low-Pressure Surface Wave Plasma DOI: 10.1143/JJAP.50.08JF05(Journal) (6693039-N) DOI: 10.7567/JJAP.50.08JF05(Journal) ========================================================== Created: 2023-01-05 12:14:26 ConfID: 6693036 CauseID: 1557138363 OtherID: 1363324507 JT: Japanese Journal of Applied Physics MD: Deguchi,50,9r,90206,2011,Observation of Temporal Transition of Discharge with Water–Ceramic Electrode DOI: 10.1143/JJAP.50.090206(Journal) (6693036-N) DOI: 10.7567/JJAP.50.090206(Journal) ========================================================== Created: 2023-01-05 12:14:28 ConfID: 6693037 CauseID: 1557138366 OtherID: 1363322982 JT: Japanese Journal of Applied Physics MD: Kaneko,50,12r,120204,2011,High Open-Circuit Voltage and Its Low Temperature Coefficient in Crystalline Germanium Solar Cells Using a Heterojunction Structure with a Hydrogenated Amorphous Silicon Thin Layer DOI: 10.1143/JJAP.50.120204(Journal) (6693037-N) DOI: 10.7567/JJAP.50.120204(Journal) ========================================================== Created: 2023-01-05 12:14:25 ConfID: 6693034 CauseID: 1557138361 OtherID: 1363324457 JT: Japanese Journal of Applied Physics MD: Matsuda,50,8s2,803,2011,Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy DOI: 10.1143/JJAP.50.08KD03(Journal) (6693034-N) DOI: 10.7567/JJAP.50.08KD03(Journal) ========================================================== Created: 2023-01-05 12:14:25 ConfID: 6693035 CauseID: 1557138362 OtherID: 1363322909 JT: Japanese Journal of Applied Physics MD: Kagaya,50,11r,111002,2011,Implementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Density m-Plane In0.05Ga0.95N Epilayer Grown on a Freestanding GaN Substrate DOI: 10.1143/JJAP.50.111002(Journal) (6693035-N) DOI: 10.7567/JJAP.50.111002(Journal) ========================================================== Created: 2023-01-05 12:14:24 ConfID: 6693032 CauseID: 1557138358 OtherID: 1363322954 JT: Japanese Journal of Applied Physics MD: Ito,50,11r,116603,2011,Planar Circulator for Sub-Terahertz-Wave Reflection-Geometry Imaging DOI: 10.1143/JJAP.50.116603(Journal) (6693032-N) DOI: 10.7567/JJAP.50.116603(Journal) ========================================================== Created: 2023-01-05 12:14:23 ConfID: 6693033 CauseID: 1557138357 OtherID: 1363324482 JT: Japanese Journal of Applied Physics MD: Loske,50,8s3,807,2011,Deposition Sequence Determines Morphology of C60 and 3,4,9,10-Perylenetetracarboxylic Diimide Islands on CaF2(111) DOI: 10.1143/JJAP.50.08LB07(Journal) (6693033-N) DOI: 10.7567/JJAP.50.08LB07(Journal) ========================================================== Created: 2023-01-05 12:14:32 ConfID: 6693046 CauseID: 1557138377 OtherID: 1363322934 JT: Japanese Journal of Applied Physics MD: Kim,50,11r,115801,2011,Low Electrical Resistivity of Ni-Doped La-Cobaltite Thin Films Using a Novel Chemical Solution Route for Thermoelectric Applications DOI: 10.1143/JJAP.50.115801(Journal) (6693046-N) DOI: 10.7567/JJAP.50.115801(Journal) ========================================================== Created: 2023-01-05 12:14:33 ConfID: 6693047 CauseID: 1557138379 OtherID: 1363322947 JT: Japanese Journal of Applied Physics MD: Nishi,50,11r,116602,2011,Nondestructive Measurement of Nonlinear Conduction of Nanoscale Materials, Nanoscale SiO2, and K0.3MoO3 by Pulse Photoconductivity Method DOI: 10.1143/JJAP.50.116602(Journal) (6693047-N) DOI: 10.7567/JJAP.50.116602(Journal) ========================================================== Created: 2023-01-05 12:14:31 ConfID: 6693044 CauseID: 1557138374 OtherID: 1363324358 JT: Japanese Journal of Applied Physics MD: Peng,50,8r,82501,2011,Novel Ring Protection Architecture for Fiber Sensor System DOI: 10.1143/JJAP.50.082501(Journal) (6693044-N) DOI: 10.7567/JJAP.50.082501(Journal) ========================================================== Created: 2023-01-05 12:14:32 ConfID: 6693045 CauseID: 1557138376 OtherID: 1363324317 JT: Japanese Journal of Applied Physics MD: Sato,50,7s,708,2011,Design for Underwater Aplanatic Straubel Acoustic Mirror DOI: 10.1143/JJAP.50.07HG08(Journal) (6693045-N) DOI: 10.7567/JJAP.50.07HG08(Journal) ========================================================== Created: 2023-01-05 12:14:29 ConfID: 6693042 CauseID: 1557138369 OtherID: 1363324532 JT: Japanese Journal of Applied Physics MD: Mohamad,50,9r,91603,2011,n-Channel Organic Thin-Film Transistors based on Naphthalene–Bis(dicarboximide) Polymer for Organic Transistor Memory Using Hole-Acceptor Layer DOI: 10.1143/JJAP.50.091603(Journal) (6693042-N) DOI: 10.7567/JJAP.50.091603(Journal) ========================================================== Created: 2023-01-05 12:14:30 ConfID: 6693043 CauseID: 1557138373 OtherID: 1363322973 JT: Japanese Journal of Applied Physics MD: Rho,50,12r,120209,2011,Pulsed Electron Deposition of 50-nm-thick ZnO Film at Room Temperature DOI: 10.1143/JJAP.50.120209(Journal) (6693043-N) DOI: 10.7567/JJAP.50.120209(Journal) ========================================================== Created: 2023-01-05 12:14:28 ConfID: 6693040 CauseID: 1557138367 OtherID: 1363323012 JT: Japanese Journal of Applied Physics MD: Lee,50,12r,122501,2011,Effects of a Cylindrical Cavity on the Etendue of a Light Source DOI: 10.1143/JJAP.50.122501(Journal) (6693040-N) DOI: 10.7567/JJAP.50.122501(Journal) ========================================================== Created: 2023-01-05 12:14:29 ConfID: 6693041 CauseID: 1557138368 OtherID: 1363322914 JT: Japanese Journal of Applied Physics MD: Tomida,50,11r,111502,2011,Higher-k Scalability and Leakage Current Reduction of SiO2-Doped HfO2 in Direct Tunneling Regime DOI: 10.1143/JJAP.50.111502(Journal) (6693041-N) DOI: 10.7567/JJAP.50.111502(Journal) ========================================================== Created: 2023-01-05 12:14:37 ConfID: 6693054 CauseID: 1557138389 OtherID: 1363324353 JT: Japanese Journal of Applied Physics MD: Ishiyama,50,8r,81302,2011,Electron Spin Resonance of Chromium–Platinum Pair in Silicon DOI: 10.1143/JJAP.50.081302(Journal) (6693054-N) DOI: 10.7567/JJAP.50.081302(Journal) ========================================================== Created: 2023-01-05 12:14:30 ConfID: 6693055 CauseID: 1557138371 OtherID: 1363322970 JT: Japanese Journal of Applied Physics MD: Kurihara,50,12r,120206,2011,Measurements of SiO2, Polycrystalline Silicon, and Si3N4 Etching Yields Depending on Ion Incident Angle DOI: 10.1143/JJAP.50.120206(Journal) (6693055-N) DOI: 10.7567/JJAP.50.120206(Journal) ========================================================== Created: 2023-01-05 12:14:35 ConfID: 6693052 CauseID: 1557138386 OtherID: 1363322963 JT: Japanese Journal of Applied Physics MD: Kuboi,50,11r,116501,2011,Numerical Simulation Method for Plasma-Induced Damage Profile in SiO2 Etching DOI: 10.1143/JJAP.50.116501(Journal) (6693052-N) DOI: 10.7567/JJAP.50.116501(Journal) ========================================================== Created: 2023-01-05 12:14:36 ConfID: 6693053 CauseID: 1557138388 OtherID: 1363324501 JT: Japanese Journal of Applied Physics MD: Liu,50,9r,91101,2011,Different Resistive Switching Characteristics of a Cu/SiO2/Pt Structure DOI: 10.1143/JJAP.50.091101(Journal) (6693053-N) DOI: 10.7567/JJAP.50.091101(Journal) ========================================================== Created: 2023-01-05 12:14:38 ConfID: 6693050 CauseID: 1557138383 OtherID: 1363322990 JT: Japanese Journal of Applied Physics MD: Nayek,50,12r,121701,2011,Electric-Field-Induced Formation of Multiwalled Carbon Nanotube Conductive Pathways in Positive Dielectric Anisotropic Nematic Liquid Crystal Host DOI: 10.1143/JJAP.50.121701(Journal) (6693050-N) DOI: 10.7567/JJAP.50.121701(Journal) ========================================================== Created: 2023-01-05 12:14:40 ConfID: 6693051 CauseID: 1557138385 OtherID: 1363324352 JT: Japanese Journal of Applied Physics MD: Yagyu,50,8r,81606,2011,Adsorption of Phenylphosphonic Acid on Gold and Platinum Surfaces DOI: 10.1143/JJAP.50.081606(Journal) (6693051-N) DOI: 10.7567/JJAP.50.081606(Journal) ========================================================== Created: 2023-01-05 12:14:34 ConfID: 6693048 CauseID: 1557138380 OtherID: 1363324315 JT: Japanese Journal of Applied Physics MD: Hayashi,50,8r,80001,2011,Cutting-Edge Technology of Bismuth-Based High-Temperature Superconducting Wires for Application in Energy- and Environment-Related Fields DOI: 10.1143/JJAP.50.080001(Journal) (6693048-N) DOI: 10.7567/JJAP.50.080001(Journal) ========================================================== Created: 2023-01-05 12:14:34 ConfID: 6693049 CauseID: 1557138382 OtherID: 1363324466 JT: Japanese Journal of Applied Physics MD: Makihara,50,8s2,806,2011,Formation of High-Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing Using Thermal Plasma Jet for Floating Gate Memory DOI: 10.1143/JJAP.50.08KE06(Journal) (6693049-N) DOI: 10.7567/JJAP.50.08KE06(Journal) ========================================================== Created: 2023-01-05 12:14:02 ConfID: 6692998 CauseID: 1557138317 OtherID: 1363324420 JT: Japanese Journal of Applied Physics MD: Tsuda,50,8s1,806,2011,Three-Dimensional Atomic-Scale Cellular Model and Feature Profile Evolution during Si Etching in Chlorine-Based Plasmas: Analysis of Profile Anomalies and Surface Roughness DOI: 10.1143/JJAP.50.08JE06(Journal) (6692998-N) DOI: 10.7567/JJAP.50.08JE06(Journal) ========================================================== Created: 2023-01-05 12:14:03 ConfID: 6692999 CauseID: 1557138318 OtherID: 1363324283 JT: Japanese Journal of Applied Physics MD: Tanaka,50,7s,717,2011,Two-Dimensional Numerical Analysis of Nonlinear Sound Wave Propagation Using Constrained Interpolation Profile Method Including Nonlinear Effect in Advection Equation DOI: 10.1143/JJAP.50.07HE17(Journal) (6692999-N) DOI: 10.7567/JJAP.50.07HE17(Journal) ========================================================== Created: 2023-01-05 12:14:00 ConfID: 6692996 CauseID: 1557138310 OtherID: 1363324454 JT: Japanese Journal of Applied Physics MD: Sugioka,50,8s1,808,2011,Effect of Filament Discharge on Uprightness of Carbon Nanotwists Tightly-Adhered to Substrate DOI: 10.1143/JJAP.50.08JF08(Journal) (6692996-N) DOI: 10.7567/JJAP.50.08JF08(Journal) ========================================================== Created: 2023-01-05 12:14:01 ConfID: 6692997 CauseID: 1557138315 OtherID: 1363324258 JT: Japanese Journal of Applied Physics MD: Kuroyama,50,7s,705,2011,Experimental Study on Measurement of Acoustic Cavitation Bubbles in Spatial Frequency Domain Using Optical Spectrometer DOI: 10.1143/JJAP.50.07HE05(Journal) (6692997-N) DOI: 10.7567/JJAP.50.07HE05(Journal) ========================================================== Created: 2023-01-05 12:14:00 ConfID: 6692994 CauseID: 1557138312 OtherID: 1363324340 JT: Japanese Journal of Applied Physics MD: Hong,50,8r,81201,2011,Fabrication of Multilevel Switching High Density Phase Change Data Recording Using Stacked GeTe/GeSbTe Structure DOI: 10.1143/JJAP.50.081201(Journal) (6692994-N) DOI: 10.7567/JJAP.50.081201(Journal) ========================================================== Created: 2023-01-05 12:14:01 ConfID: 6692995 CauseID: 1557138313 OtherID: 1363323422 JT: Japanese Journal of Applied Physics MD: Fang,50,3r,35001,2011,Relaxation Phenomena of a Magnetic Nanoparticle Assembly with Randomly Oriented Anisotropy DOI: 10.1143/JJAP.50.035001(Journal) (6692995-N) DOI: 10.7567/JJAP.50.035001(Journal) ========================================================== Created: 2023-01-05 12:13:59 ConfID: 6692992 CauseID: 1557138308 OtherID: 1363323005 JT: Japanese Journal of Applied Physics MD: Kawasaki,50,12r,121601,2011,Heat Resistant Transparent Flexible Film Obtained from Two Tetraphenylphosphonium Modified Smectites with Different Particle Size DOI: 10.1143/JJAP.50.121601(Journal) (6692992-N) DOI: 10.7567/JJAP.50.121601(Journal) ========================================================== Created: 2023-01-05 12:13:59 ConfID: 6692993 CauseID: 1557138309 OtherID: 1363324426 JT: Japanese Journal of Applied Physics MD: Lee,50,8s1,801,2011,Biomedical Applications of Low Temperature Atmospheric Pressure Plasmas to Cancerous Cell Treatment and Tooth Bleaching DOI: 10.1143/JJAP.50.08JF01(Journal) (6692993-N) DOI: 10.7567/JJAP.50.08JF01(Journal) ========================================================== Created: 2023-01-05 12:14:07 ConfID: 6693006 CauseID: 1557138326 OtherID: 1363324293 JT: Japanese Journal of Applied Physics MD: Tanaka,50,7s,703,2011,Development and Characterization of a Small Ring-Shaped Ultrasonic Probe for Biopsies DOI: 10.1143/JJAP.50.07HF03(Journal) (6693006-N) DOI: 10.7567/JJAP.50.07HF03(Journal) ========================================================== Created: 2023-01-05 12:14:08 ConfID: 6693007 CauseID: 1557138327 OtherID: 1363324450 JT: Japanese Journal of Applied Physics MD: Nishioka,50,8s1,813,2011,Mechanisms of Decomposition of Organic Compounds by Water Plasmas at Atmospheric Pressure DOI: 10.1143/JJAP.50.08JF13(Journal) (6693007-N) DOI: 10.7567/JJAP.50.08JF13(Journal) ========================================================== Created: 2023-01-05 12:14:06 ConfID: 6693004 CauseID: 1557138324 OtherID: 1363322920 JT: Japanese Journal of Applied Physics MD: Hao,50,11r,110207,2011,Preparation of (K0.50Na0.50)NbO3 Lead-Free Piezoelectric Ceramics by Mechanical Activation Assisted Method DOI: 10.1143/JJAP.50.110207(Journal) (6693004-N) DOI: 10.7567/JJAP.50.110207(Journal) ========================================================== Created: 2023-01-05 12:14:06 ConfID: 6693005 CauseID: 1557138325 OtherID: 1363324389 JT: Japanese Journal of Applied Physics MD: Sakurai,50,8r,87201,2011,Combinatorial Search for Ni–Nb–Ti Thin Film Amorphous Alloys with High Corrosion Resistances DOI: 10.1143/JJAP.50.087201(Journal) (6693005-N) DOI: 10.7567/JJAP.50.087201(Journal) ========================================================== Created: 2023-01-05 12:14:05 ConfID: 6693002 CauseID: 1557138322 OtherID: 1363324446 JT: Japanese Journal of Applied Physics MD: Deng,50,8s1,805,2011,Damage-Free Dry Polishing of 4H-SiC Combined with Atmospheric-Pressure Water Vapor Plasma Oxidation DOI: 10.1143/JJAP.50.08JG05(Journal) (6693002-N) DOI: 10.7567/JJAP.50.08JG05(Journal) ========================================================== Created: 2023-01-05 12:14:05 ConfID: 6693003 CauseID: 1557138323 OtherID: 1363323433 JT: Japanese Journal of Applied Physics MD: Okada,50,3r,35602,2011,Growth Mechanism of Nonpolar and Semipolar GaN Layers from Sapphire Sidewalls on Various Maskless Patterned Sapphire Substrates DOI: 10.1143/JJAP.50.035602(Journal) (6693003-N) DOI: 10.7567/JJAP.50.035602(Journal) ========================================================== Created: 2023-01-05 12:14:04 ConfID: 6693000 CauseID: 1557138319 OtherID: 1363324387 JT: Japanese Journal of Applied Physics MD: Negishi,50,8r,85001,2011,Ground State Instability in Spin Polarization for Electrons Confined in Two-Dimensional Square Quantum Dots DOI: 10.1143/JJAP.50.085001(Journal) (6693000-N) DOI: 10.7567/JJAP.50.085001(Journal) ========================================================== Created: 2023-01-05 12:14:04 ConfID: 6693001 CauseID: 1557138320 OtherID: 1363323025 JT: Japanese Journal of Applied Physics MD: Lie,50,12r,122701,2011,Excitation Mechanism of H, He, C, and F Atoms in Metal-Assisted Atmospheric Helium Gas Plasma Induced by Transversely Excited Atmospheric-Pressure CO2 Laser Bombardment DOI: 10.1143/JJAP.50.122701(Journal) (6693001-N) DOI: 10.7567/JJAP.50.122701(Journal) ========================================================== Created: 2023-01-05 12:14:11 ConfID: 6693014 CauseID: 1557138334 OtherID: 1363324413 JT: Japanese Journal of Applied Physics MD: Lee,50,8r,88004,2011,Fabrication and Properties of Indium Tin Oxide/ZnO Schottky Photodiode with Hydrogen Peroxide Treatment DOI: 10.1143/JJAP.50.088004(Journal) (6693014-N) DOI: 10.7567/JJAP.50.088004(Journal) ========================================================== Created: 2023-01-05 12:14:12 ConfID: 6693015 CauseID: 1557138335 OtherID: 1363322931 JT: Japanese Journal of Applied Physics MD: Tanaka,50,11r,112501,2011,A Wide-Area Sensor Network Based on Fiber Optic Power Supply DOI: 10.1143/JJAP.50.112501(Journal) (6693015-N) DOI: 10.7567/JJAP.50.112501(Journal) ========================================================== Created: 2023-01-05 12:14:10 ConfID: 6693012 CauseID: 1557138332 OtherID: 1363323458 JT: Japanese Journal of Applied Physics MD: Tran,50,3r,36202,2011,Temperature Analysis of Copper Wire in a Plasma Annealing System at Atmospheric Pressure DOI: 10.1143/JJAP.50.036202(Journal) (6693012-N) DOI: 10.7567/JJAP.50.036202(Journal) ========================================================== Created: 2023-01-05 12:14:10 ConfID: 6693013 CauseID: 1557138333 OtherID: 1363323441 JT: Japanese Journal of Applied Physics MD: Kozawa,50,3r,36505,2011,Relationship of Electron Diffusion Length to Line Edge Roughness in Chemically Amplified Extreme Ultraviolet Resists DOI: 10.1143/JJAP.50.036505(Journal) (6693013-N) DOI: 10.7567/JJAP.50.036505(Journal) ========================================================== Created: 2023-01-05 12:14:09 ConfID: 6693010 CauseID: 1557138330 OtherID: 1363322932 JT: Japanese Journal of Applied Physics MD: Mitoh,50,11r,114101,2011,Electron Spin Resonance Observation of Bias-Temperature Stress-Induced Interface Defects at NO/N2O-Annealed Chemical-Vapor-Deposition SiO2/(100) p-Si Substrates DOI: 10.1143/JJAP.50.114101(Journal) (6693010-N) DOI: 10.7567/JJAP.50.114101(Journal) ========================================================== Created: 2023-01-05 12:14:14 ConfID: 6693011 CauseID: 1557138331 OtherID: 1363323001 JT: Japanese Journal of Applied Physics MD: Hara,50,12r,121202,2011,Structural Study of BF2 Ion Implantation and Post Annealing of BaSi2 Epitaxial Films DOI: 10.1143/JJAP.50.121202(Journal) (6693011-N) DOI: 10.7567/JJAP.50.121202(Journal) ========================================================== Created: 2023-01-05 12:14:09 ConfID: 6693008 CauseID: 1557138329 OtherID: 1363323454 JT: Japanese Journal of Applied Physics MD: Inoue,50,3r,36502,2011,High-Rate Deposition of Amorphous Silicon Films by Microwave-Excited High-Density Plasma DOI: 10.1143/JJAP.50.036502(Journal) (6693008-N) DOI: 10.7567/JJAP.50.036502(Journal) ========================================================== Created: 2023-01-05 12:14:08 ConfID: 6693009 CauseID: 1557138328 OtherID: 1363324282 JT: Japanese Journal of Applied Physics MD: Takano,50,7s,725,2011,Improvements in Controllability of Ultrasonic Linear Motors by Longitudinal-Bending Multilayered Transducers with Independent Electrodes DOI: 10.1143/JJAP.50.07HE25(Journal) (6693009-N) DOI: 10.7567/JJAP.50.07HE25(Journal) ========================================================== Created: 2023-01-05 12:14:16 ConfID: 6693022 CauseID: 1557138345 OtherID: 1363324327 JT: Japanese Journal of Applied Physics MD: Cho,50,7s,701,2011,Vertical Coherence Measurements of Ambient Noise in Shallow Water off the East Coast of Korea DOI: 10.1143/JJAP.50.07HG01(Journal) (6693022-N) DOI: 10.7567/JJAP.50.07HG01(Journal) ========================================================== Created: 2023-01-05 12:14:17 ConfID: 6693023 CauseID: 1557138347 OtherID: 1363324308 JT: Japanese Journal of Applied Physics MD: Masuda,50,7s,711,2011,Effect of Existence of Red Blood Cells in Trapping Performance of Microbubbles by Acoustic Radiation Force DOI: 10.1143/JJAP.50.07HF11(Journal) (6693023-N) DOI: 10.7567/JJAP.50.07HF11(Journal) ========================================================== Created: 2023-01-05 12:14:15 ConfID: 6693020 CauseID: 1557138343 OtherID: 1363322961 JT: Japanese Journal of Applied Physics MD: Taue,50,11r,116604,2011,Magnetic Field Mapping and Biaxial Vector Operation for Biomagnetic Applications Using High-Sensitivity Optically Pumped Atomic Magnetometers DOI: 10.1143/JJAP.50.116604(Journal) (6693020-N) DOI: 10.7567/JJAP.50.116604(Journal) ========================================================== Created: 2023-01-05 12:14:17 ConfID: 6693021 CauseID: 1557138346 OtherID: 1363324464 JT: Japanese Journal of Applied Physics MD: Kanazawa,50,8s2,804,2011,Improving Single-Chamber Solid Oxide Fuel Cell Performance by Plasma Treatment Using an Atmospheric-Pressure Helium Plasma Jet DOI: 10.1143/JJAP.50.08KA04(Journal) (6693021-N) DOI: 10.7567/JJAP.50.08KA04(Journal) ========================================================== Created: 2023-01-05 12:14:13 ConfID: 6693018 CauseID: 1557138339 OtherID: 1363324299 JT: Japanese Journal of Applied Physics MD: Ikeshita,50,7s,708,2011,Noninvasive Measurement of Transient Change in Viscoelasticity Due to Flow-Mediated Dilation Using Automated Detection of Arterial Wall Boundaries DOI: 10.1143/JJAP.50.07HF08(Journal) (6693018-N) DOI: 10.7567/JJAP.50.07HF08(Journal) ========================================================== Created: 2023-01-05 12:14:14 ConfID: 6693019 CauseID: 1557138340 OtherID: 1363324344 JT: Japanese Journal of Applied Physics MD: Hwang,50,8r,80210,2011,Color Polymer-Stabilized Liquid Crystal for the Optical Shutter with Fast Response Time DOI: 10.1143/JJAP.50.080210(Journal) (6693019-N) DOI: 10.7567/JJAP.50.080210(Journal) ========================================================== Created: 2023-01-05 12:14:12 ConfID: 6693016 CauseID: 1557138336 OtherID: 1363324393 JT: Japanese Journal of Applied Physics MD: Na,50,8s1,801,2011,Wave-Cutoff Method: Theory, Apparatus, Characteristics, and Applications DOI: 10.1143/JJAP.50.08JB01(Journal) (6693016-N) DOI: 10.7567/JJAP.50.08JB01(Journal) ========================================================== Created: 2023-01-05 12:14:13 ConfID: 6693017 CauseID: 1557138338 OtherID: 1363324451 JT: Japanese Journal of Applied Physics MD: Shimizu,50,8s2,803,2011,Surface Treatment of Polymer Film by Atmospheric Pulsed Microplasma: Study on Gas Humidity Effect for Improving the Hydrophilic Property DOI: 10.1143/JJAP.50.08KA03(Journal) (6693017-N) DOI: 10.7567/JJAP.50.08KA03(Journal) ========================================================== Created: 2023-01-05 12:16:33 ConfID: 6693222 CauseID: 1557138597 OtherID: 1363324659 JT: Japanese Journal of Applied Physics MD: Yokota,50,9s2,903,2011,Growth of Shape-Controlled Ca3NbGa3Si2O14 and Sr3NbGa3Si2O14 Single Crystals by Micro-Pulling-Down Method and Their Physical Properties DOI: 10.1143/JJAP.50.09ND03(Journal) (6693222-N) DOI: 10.7567/JJAP.50.09ND03(Journal) ========================================================== Created: 2023-01-05 12:16:33 ConfID: 6693223 CauseID: 1557138598 OtherID: 1363324519 JT: Japanese Journal of Applied Physics MD: Phan,50,9r,92503,2011,Super-Resolution Digital Holographic Microscopy for Three Dimensional Sample Using Multipoint Light Source Illumination DOI: 10.1143/JJAP.50.092503(Journal) (6693223-N) DOI: 10.7567/JJAP.50.092503(Journal) ========================================================== Created: 2023-01-05 12:16:27 ConfID: 6693220 CauseID: 1557138594 OtherID: 1363326707 JT: Japanese Journal of Applied Physics MD: Narumi,50,9s1,901,2011,One-Head Near-Field Writing/Erasing on a Rewritable Dual-Layer Optical Disk Having High-Index Cover and Separation Layers DOI: 10.1143/JJAP.50.09MG01(Journal) (6693220-N) DOI: 10.7567/JJAP.50.09MG01(Journal) ========================================================== Created: 2023-01-05 12:16:28 ConfID: 6693221 CauseID: 1557138595 OtherID: 1363324494 JT: Japanese Journal of Applied Physics MD: Ishida,50,8s3,802,2011,Spin-Polarized Tunneling between Optically Pumped GaAs(110) Surface and Spin-Polarized Tip DOI: 10.1143/JJAP.50.08LB02(Journal) (6693221-N) DOI: 10.7567/JJAP.50.08LB02(Journal) ========================================================== Created: 2023-01-05 12:16:26 ConfID: 6693218 CauseID: 1557138592 OtherID: 1363322857 JT: Japanese Journal of Applied Physics MD: Bando,50,10r,101603,2011,Energy Dispersions of Anisotropic Refractive Indices of Thiophene/Phenylene Co-Oligomer Crystals DOI: 10.1143/JJAP.50.101603(Journal) (6693218-N) DOI: 10.7567/JJAP.50.101603(Journal) ========================================================== Created: 2023-01-05 12:16:25 ConfID: 6693219 CauseID: 1557138591 OtherID: 1363324635 JT: Japanese Journal of Applied Physics MD: Yamamoto,50,9s2,905,2011,Effects of Manganese Oxides/Gold Composite Electrode on Piezoelectric Properties of Lead Magnesium Niobate Titanate Single Crystal DOI: 10.1143/JJAP.50.09NC05(Journal) (6693219-N) DOI: 10.7567/JJAP.50.09NC05(Journal) ========================================================== Created: 2023-01-05 12:16:28 ConfID: 6693216 CauseID: 1557138587 OtherID: 1363324655 JT: Japanese Journal of Applied Physics MD: Suzuki,50,9s2,911,2011,Effects of Lattice Constant and Sintering Atmosphere on Substitution of Sn2+ Ions at Ba Site in (Ba,Ca)TiO3 Perovskites: Experimental and Theoretical Studies DOI: 10.1143/JJAP.50.09NC11(Journal) (6693216-N) DOI: 10.7567/JJAP.50.09NC11(Journal) ========================================================== Created: 2023-01-05 12:16:29 ConfID: 6693217 CauseID: 1557138590 OtherID: 1363324660 JT: Japanese Journal of Applied Physics MD: Kanie,50,9s2,909,2011,Precursor Effect on Hydrothermal Synthesis of Sodium Potassium Niobate Fine Particles and Their Piezoelectric Properties DOI: 10.1143/JJAP.50.09ND09(Journal) (6693217-N) DOI: 10.7567/JJAP.50.09ND09(Journal) ========================================================== Created: 2023-01-05 12:16:35 ConfID: 6693230 CauseID: 1557138605 OtherID: 1363324634 JT: Japanese Journal of Applied Physics MD: Yamada,50,9s2,906,2011,Effect of Ferroelectric Polarization Domain Structure on Electronic Transport Property of Ferroelectric/ZnO Heterostructure DOI: 10.1143/JJAP.50.09NA06(Journal) (6693230-N) DOI: 10.7567/JJAP.50.09NA06(Journal) ========================================================== Created: 2023-01-05 12:16:36 ConfID: 6693231 CauseID: 1557138607 OtherID: 1363324493 JT: Japanese Journal of Applied Physics MD: Takahashi,50,8s3,811,2011,Structural Analysis of Si-Based Nanodot Arrays Self-Organized by Selective Etching of SiGe/Si Films DOI: 10.1143/JJAP.50.08LB11(Journal) (6693231-N) DOI: 10.7567/JJAP.50.08LB11(Journal) ========================================================== Created: 2023-01-05 12:16:32 ConfID: 6693228 CauseID: 1557138603 OtherID: 1363324630 JT: Japanese Journal of Applied Physics MD: Tsurekawa,50,9s2,902,2011,Changes in Ferroelectric Domain Structure with Electric Fatigue in Li0.06(Na0.5K0.5)0.94NbO3 Ceramics DOI: 10.1143/JJAP.50.09NC02(Journal) (6693228-N) DOI: 10.7567/JJAP.50.09NC02(Journal) ========================================================== Created: 2023-01-05 12:16:32 ConfID: 6693229 CauseID: 1557138604 OtherID: 1363324474 JT: Japanese Journal of Applied Physics MD: Eriguchi,50,8s2,804,2011,Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar Metal–Oxide–Semiconductor Field-Effect Transistors and the Optimization Methodology DOI: 10.1143/JJAP.50.08KD04(Journal) (6693229-N) DOI: 10.7567/JJAP.50.08KD04(Journal) ========================================================== Created: 2023-01-05 12:16:31 ConfID: 6693226 CauseID: 1557138602 OtherID: 1363324520 JT: Japanese Journal of Applied Physics MD: Pan,50,9r,93001,2011,Effect of Zr Addition on the Magnetization Reversal Behavior for α-Fe/Pr2Fe14B Nanocomposite Alloys DOI: 10.1143/JJAP.50.093001(Journal) (6693226-N) DOI: 10.7567/JJAP.50.093001(Journal) ========================================================== Created: 2023-01-05 12:16:31 ConfID: 6693227 CauseID: 1557138601 OtherID: 1363324690 JT: Japanese Journal of Applied Physics MD: Kaneshiro,50,9s2,911,2011,Domain Structure Analyses of Tetragonal BaTiO3 Single Crystal by Scanning Second-Harmonic Generation Microscopy: Birefringence Effect on Second-Harmonic Generation Polarization Diagram DOI: 10.1143/JJAP.50.09NE11(Journal) (6693227-N) DOI: 10.7567/JJAP.50.09NE11(Journal) ========================================================== Created: 2023-01-05 12:16:34 ConfID: 6693224 CauseID: 1557138599 OtherID: 1363322874 JT: Japanese Journal of Applied Physics MD: Sakai,50,10r,103002,2011,Generation of Spin Current in Bipolar Conductors DOI: 10.1143/JJAP.50.103002(Journal) (6693224-N) DOI: 10.7567/JJAP.50.103002(Journal) ========================================================== Created: 2023-01-05 12:16:30 ConfID: 6693225 CauseID: 1557138600 OtherID: 1363324624 JT: Japanese Journal of Applied Physics MD: Yamamoto,50,9s2,904,2011,Effects of Electrodes on Dielectric and Piezoelectric Properties of Lead Magnesium Niobate–Lead Titanate Single-Crystal Transducer DOI: 10.1143/JJAP.50.09NC04(Journal) (6693225-N) DOI: 10.7567/JJAP.50.09NC04(Journal) ========================================================== Created: 2023-01-05 12:16:41 ConfID: 6693238 CauseID: 1557138615 OtherID: 1363322845 JT: Japanese Journal of Applied Physics MD: Kim,50,10r,101602,2011,In-situ Determination of Interface Dipole Energy between Tris(8-hydroxyquinoline) Aluminum and MgO Coated Al in Inverted Top-Emitting Organic Light-Emitting Diodes DOI: 10.1143/JJAP.50.101602(Journal) (6693238-N) DOI: 10.7567/JJAP.50.101602(Journal) ========================================================== Created: 2023-01-05 12:16:42 ConfID: 6693239 CauseID: 1557138616 OtherID: 1363324653 JT: Japanese Journal of Applied Physics MD: Fujii,50,9s2,907,2011,Structural, Dielectric, and Piezoelectric Properties of Mn-Doped BaTiO3–Bi(Mg1/2Ti1/2)O3–BiFeO3 Ceramics DOI: 10.1143/JJAP.50.09ND07(Journal) (6693239-N) DOI: 10.7567/JJAP.50.09ND07(Journal) ========================================================== Created: 2023-01-05 12:16:40 ConfID: 6693236 CauseID: 1557138614 OtherID: 1363322873 JT: Japanese Journal of Applied Physics MD: Abudukelimu,50,10r,104301,2011,Effects of Scattering Direction of Hot Electrons in the Drain of Ballistic n+–i–n+ Diode DOI: 10.1143/JJAP.50.104301(Journal) (6693236-N) DOI: 10.7567/JJAP.50.104301(Journal) ========================================================== Created: 2023-01-05 12:16:39 ConfID: 6693237 CauseID: 1557138611 OtherID: 1363324459 JT: Japanese Journal of Applied Physics MD: Sakamoto,50,8s2,803,2011,25 nm Wide Silicon Trench Fabrication by Edge Lithography DOI: 10.1143/JJAP.50.08KC03(Journal) (6693237-N) DOI: 10.7567/JJAP.50.08KC03(Journal) ========================================================== Created: 2023-01-05 12:16:24 ConfID: 6693234 CauseID: 1557138585 OtherID: 1363324458 JT: Japanese Journal of Applied Physics MD: Hong,50,8s2,802,2011,Preparation of SiO2 Passivation Thin Film for Improved the Organic Light-Emitting Device Life Time DOI: 10.1143/JJAP.50.08KE02(Journal) (6693234-N) DOI: 10.7567/JJAP.50.08KE02(Journal) ========================================================== Created: 2023-01-05 12:16:38 ConfID: 6693235 CauseID: 1557138610 OtherID: 1363324636 JT: Japanese Journal of Applied Physics MD: Li,50,9s2,910,2011,Solution-Based Fabrication of Perovskite Multilayers and Superlattices Using Nanosheet Process DOI: 10.1143/JJAP.50.09NA10(Journal) (6693235-N) DOI: 10.7567/JJAP.50.09NA10(Journal) ========================================================== Created: 2023-01-05 12:16:36 ConfID: 6693232 CauseID: 1557138606 OtherID: 1363324643 JT: Japanese Journal of Applied Physics MD: Uehara,50,9s2,902,2011,Piezoelectric Characteristics of Poly(γ-benzyl-L-glutamate) Film Oriented under Strong Magnetic Field DOI: 10.1143/JJAP.50.09ND02(Journal) (6693232-N) DOI: 10.7567/JJAP.50.09ND02(Journal) ========================================================== Created: 2023-01-05 12:16:38 ConfID: 6693233 CauseID: 1557138609 OtherID: 1363324662 JT: Japanese Journal of Applied Physics MD: Tomioka,50,9s2,916,2011,Lead–Zirconate–Titanate Acoustic Energy Harvesters with Dual Top Electrodes DOI: 10.1143/JJAP.50.09ND16(Journal) (6693233-N) DOI: 10.7567/JJAP.50.09ND16(Journal) ========================================================== Created: 2023-01-05 12:16:46 ConfID: 6693246 CauseID: 1557138623 OtherID: 1363324625 JT: Japanese Journal of Applied Physics MD: Hieno,50,9s2,904,2011,Synthesis of BiFeO3–Bi0.5Na0.5TiO3 Thin Films by Chemical Solution Deposition and Their Properties DOI: 10.1143/JJAP.50.09NB04(Journal) (6693246-N) DOI: 10.7567/JJAP.50.09NB04(Journal) ========================================================== Created: 2023-01-05 12:16:46 ConfID: 6693247 CauseID: 1557138624 OtherID: 1363326706 JT: Japanese Journal of Applied Physics MD: Shyu,50,9s1,903,2011,Tunable Surface Plasmon Resonances Based on Chromium Disk Array Containing Liquid Crystals DOI: 10.1143/JJAP.50.09MG03(Journal) (6693247-N) DOI: 10.7567/JJAP.50.09MG03(Journal) ========================================================== Created: 2023-01-05 12:16:45 ConfID: 6693244 CauseID: 1557138621 OtherID: 1363324529 JT: Japanese Journal of Applied Physics MD: Ma,50,9r,91403,2011,Experimental and Simulation Studies of Solid-Phase Crystallization of Fluorine-Implanted Amorphous Silicon on Silicon Dioxide DOI: 10.1143/JJAP.50.091403(Journal) (6693244-N) DOI: 10.7567/JJAP.50.091403(Journal) ========================================================== Created: 2023-01-05 12:16:40 ConfID: 6693245 CauseID: 1557138613 OtherID: 1363324462 JT: Japanese Journal of Applied Physics MD: Sasaki,50,8s2,805,2011,Magnetron Sputtering Deposition of Conductive Diamond-Like Carbon Films with Embedded Nanoparticles DOI: 10.1143/JJAP.50.08KE05(Journal) (6693245-N) DOI: 10.7567/JJAP.50.08KE05(Journal) ========================================================== Created: 2023-01-05 12:16:44 ConfID: 6693242 CauseID: 1557138619 OtherID: 1363326709 JT: Japanese Journal of Applied Physics MD: Matoba,50,9s1,908,2011,Improvement of Storage Capacity Using Confocal Scheme in Reflection-Type Holographic Memory System with Speckle Shift Multiplexing DOI: 10.1143/JJAP.50.09ME08(Journal) (6693242-N) DOI: 10.7567/JJAP.50.09ME08(Journal) ========================================================== Created: 2023-01-05 12:16:44 ConfID: 6693243 CauseID: 1557138620 OtherID: 1363324508 JT: Japanese Journal of Applied Physics MD: Zhou,50,9r,91402,2011,Study on Interface Adhesion between Phase Change Material Film and SiO2 Layer by Nanoscratch Test DOI: 10.1143/JJAP.50.091402(Journal) (6693243-N) DOI: 10.7567/JJAP.50.091402(Journal) ========================================================== Created: 2023-01-05 12:16:42 ConfID: 6693240 CauseID: 1557138617 OtherID: 1363324537 JT: Japanese Journal of Applied Physics MD: Kim,50,9r,95501,2011,In situ Monitoring of Target Voltage in Magnetron Reactive Sputtering of ZnO DOI: 10.1143/JJAP.50.095501(Journal) (6693240-N) DOI: 10.7567/JJAP.50.095501(Journal) ========================================================== Created: 2023-01-05 12:16:43 ConfID: 6693241 CauseID: 1557138618 OtherID: 1363324575 JT: Japanese Journal of Applied Physics MD: Amemiya,50,9r,96701,2011,Evaluation of Particle Protection Capability of Extreme Ultraviolet Lithography Mask Carrier in Vacuum Transfer by Experiment and Calculation DOI: 10.1143/JJAP.50.096701(Journal) (6693241-N) DOI: 10.7567/JJAP.50.096701(Journal) ========================================================== Created: 2023-01-05 12:16:09 ConfID: 6693190 CauseID: 1557138554 OtherID: 1363324480 JT: Japanese Journal of Applied Physics MD: Ikai,50,8s3,804,2011,Mechanics of Intracellular Stress Fibers: A Short Review DOI: 10.1143/JJAP.50.08LA04(Journal) (6693190-N) DOI: 10.7567/JJAP.50.08LA04(Journal) ========================================================== Created: 2023-01-05 12:16:05 ConfID: 6693191 CauseID: 1557138555 OtherID: 1363324631 JT: Japanese Journal of Applied Physics MD: Yamazoe,50,9s2,907,2011,Fabrication of Lead-Free (Na0.5K0.5)NbO3–BaZrO3–(Bi0.5Li0.5)TiO3 Ferroelectric Thin Films on (111)Pt/Ti/SiO2/(100)Si Substrate by Pulsed Laser Deposition DOI: 10.1143/JJAP.50.09NA07(Journal) (6693191-N) DOI: 10.7567/JJAP.50.09NA07(Journal) ========================================================== Created: 2023-01-05 12:16:04 ConfID: 6693188 CauseID: 1557138550 OtherID: 1363324592 JT: Japanese Journal of Applied Physics MD: Vienne,50,9s1,903,2011,Magnetic Field Induced by Various Input Beam Polarizations in All-Optical Magnetic Recording DOI: 10.1143/JJAP.50.09MD03(Journal) (6693188-N) DOI: 10.7567/JJAP.50.09MD03(Journal) ========================================================== Created: 2023-01-05 12:16:08 ConfID: 6693189 CauseID: 1557138552 OtherID: 1363324417 JT: Japanese Journal of Applied Physics MD: Al-Riyami,50,8s1,805,2011,Near-Edge X-ray Absorption Fine-Structure Spectroscopic Study on Nitrogen-Doped Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films Prepared by Pulsed Laser Deposition DOI: 10.1143/JJAP.50.08JD05(Journal) (6693189-N) DOI: 10.7567/JJAP.50.08JD05(Journal) ========================================================== Created: 2023-01-05 12:16:03 ConfID: 6693186 CauseID: 1557138548 OtherID: 1363324573 JT: Japanese Journal of Applied Physics MD: Xu,50,9s1,905,2011,Thermal Analysis of Heat-Assisted Magnetic Recording Optical Head with Laser Diode on Slider DOI: 10.1143/JJAP.50.09MA05(Journal) (6693186-N) DOI: 10.7567/JJAP.50.09MA05(Journal) ========================================================== Created: 2023-01-05 12:16:03 ConfID: 6693187 CauseID: 1557138549 OtherID: 1363324644 JT: Japanese Journal of Applied Physics MD: Watanabe,50,9s2,901,2011,Structural Transformation of Hexagonal (0001)BaTiO3 Ceramics to Tetragonal (111)BaTiO3 Ceramics DOI: 10.1143/JJAP.50.09ND01(Journal) (6693187-N) DOI: 10.7567/JJAP.50.09ND01(Journal) ========================================================== Created: 2023-01-05 12:16:01 ConfID: 6693184 CauseID: 1557138546 OtherID: 1363324548 JT: Japanese Journal of Applied Physics MD: Jang,50,9r,96201,2011,Modified Reset Waveform for High Speed Address under High Ambient Temperature in AC Plasma Display Panel DOI: 10.1143/JJAP.50.096201(Journal) (6693184-N) DOI: 10.7567/JJAP.50.096201(Journal) ========================================================== Created: 2023-01-05 12:16:02 ConfID: 6693185 CauseID: 1557138547 OtherID: 1363324590 JT: Japanese Journal of Applied Physics MD: Seo,50,9s1,905,2011,Application of Herringbone Pattern to a Slim-Type Optical Disk Drive for the Reduction of Warpage and Vibration of the Rotating Disk DOI: 10.1143/JJAP.50.09MC05(Journal) (6693185-N) DOI: 10.7567/JJAP.50.09MC05(Journal) ========================================================== Created: 2023-01-05 12:16:14 ConfID: 6693198 CauseID: 1557138563 OtherID: 1363324484 JT: Japanese Journal of Applied Physics MD: Kim,50,8s3,809,2011,Structural Dependence of Grain Boundary Resistivity in Copper Nanowires DOI: 10.1143/JJAP.50.08LB09(Journal) (6693198-N) DOI: 10.7567/JJAP.50.08LB09(Journal) ========================================================== Created: 2023-01-05 12:16:11 ConfID: 6693199 CauseID: 1557138565 OtherID: 1363324605 JT: Japanese Journal of Applied Physics MD: Park,50,9s1,911,2011,Soft-Decoding Algorithm of 3/4 Tone-Controllable Code with Low-Density Parity Check Code for Holographic Data Storage DOI: 10.1143/JJAP.50.09ME11(Journal) (6693199-N) DOI: 10.7567/JJAP.50.09ME11(Journal) ========================================================== Created: 2023-01-05 12:16:07 ConfID: 6693196 CauseID: 1557138562 OtherID: 1363324449 JT: Japanese Journal of Applied Physics MD: Hayashi,50,8s1,809,2011,Synthesis of Carbon-Nanotube Fine Particles in a Glow-Discharge Plasma and Evaluation of Hydrogen Storage Properties DOI: 10.1143/JJAP.50.08JF09(Journal) (6693196-N) DOI: 10.7567/JJAP.50.08JF09(Journal) ========================================================== Created: 2023-01-05 12:16:10 ConfID: 6693197 CauseID: 1557138564 OtherID: 1363324524 JT: Japanese Journal of Applied Physics MD: Chen,50,9r,91503,2011,Structure and Microwave Dielectric Property Relations in Barium Cobalt Magnesium Niobate Ceramics DOI: 10.1143/JJAP.50.091503(Journal) (6693197-N) DOI: 10.7567/JJAP.50.091503(Journal) ========================================================== Created: 2023-01-05 12:16:06 ConfID: 6693194 CauseID: 1557138559 OtherID: 1363324665 JT: Japanese Journal of Applied Physics MD: Moon,50,9s2,920,2011,High Power DC–DC Conversion Applications of Disk-Type Radial Mode Pb(Zr,Ti)O3 Ceramic Transducer DOI: 10.1143/JJAP.50.09ND20(Journal) (6693194-N) DOI: 10.7567/JJAP.50.09ND20(Journal) ========================================================== Created: 2023-01-05 12:16:07 ConfID: 6693195 CauseID: 1557138560 OtherID: 1363326711 JT: Japanese Journal of Applied Physics MD: Shibukawa,50,9s1,910,2011,Multilayer Collinear Holographic Memory with Movable Random Phase Mask DOI: 10.1143/JJAP.50.09ME10(Journal) (6693195-N) DOI: 10.7567/JJAP.50.09ME10(Journal) ========================================================== Created: 2023-01-05 12:16:05 ConfID: 6693192 CauseID: 1557138557 OtherID: 1363324568 JT: Japanese Journal of Applied Physics MD: Yamauchi,50,9r,98004,2011,Fabrication of Ni/Al2O3/Ni Heteroepitaxial Junction by Post-Hydrogen Reduction of NiO/Al2O3/NiO Trilayered Epitaxial Thin Film DOI: 10.1143/JJAP.50.098004(Journal) (6693192-N) DOI: 10.7567/JJAP.50.098004(Journal) ========================================================== Created: 2023-01-05 12:16:06 ConfID: 6693193 CauseID: 1557138558 OtherID: 1363324505 JT: Japanese Journal of Applied Physics MD: Yanagiya,50,8s3,817,2011,Interference Phenomena Observed on an Atomic Force Microscope Cantilever by Laser Confocal Microscopy DOI: 10.1143/JJAP.50.08LB17(Journal) (6693193-N) DOI: 10.7567/JJAP.50.08LB17(Journal) ========================================================== Created: 2023-01-05 12:16:16 ConfID: 6693206 CauseID: 1557138575 OtherID: 1363324429 JT: Japanese Journal of Applied Physics MD: Hirakawa,50,8s1,806,2011,Temperature-Dependent Current-Induced Magnetization Switching in Fe3Si/FeSi2/Fe3Si Trilayered Films DOI: 10.1143/JJAP.50.08JD06(Journal) (6693206-N) DOI: 10.7567/JJAP.50.08JD06(Journal) ========================================================== Created: 2023-01-05 12:16:16 ConfID: 6693207 CauseID: 1557138576 OtherID: 1363324646 JT: Japanese Journal of Applied Physics MD: Kakimoto,50,9s2,913,2011,Structural Characterization of Na0.5K0.5NbO3 Ceramic Particles Classified by Centrifugal Separator DOI: 10.1143/JJAP.50.09NC13(Journal) (6693207-N) DOI: 10.7567/JJAP.50.09NC13(Journal) ========================================================== Created: 2023-01-05 12:16:18 ConfID: 6693204 CauseID: 1557138572 OtherID: 1363322825 JT: Japanese Journal of Applied Physics MD: Sato,50,10r,100208,2011,Fabrication of Au Microelectrodes with Photopolymerization of Triazine Dithiol Thin Films DOI: 10.1143/JJAP.50.100208(Journal) (6693204-N) DOI: 10.7567/JJAP.50.100208(Journal) ========================================================== Created: 2023-01-05 12:16:20 ConfID: 6693205 CauseID: 1557138573 OtherID: 1363324423 JT: Japanese Journal of Applied Physics MD: Cvelbar,50,8s1,802,2011,Hemocompatible Poly(ethylene terephthalate) Polymer Modified via Reactive Plasma Treatment DOI: 10.1143/JJAP.50.08JF02(Journal) (6693205-N) DOI: 10.7567/JJAP.50.08JF02(Journal) ========================================================== Created: 2023-01-05 12:16:15 ConfID: 6693202 CauseID: 1557138571 OtherID: 1363324515 JT: Japanese Journal of Applied Physics MD: Miyaoka,50,8s3,816,2011,Rheological Properties of Growth-Arrested Fibroblast Cells under Serum Starvation Measured by Atomic Force Microscopy DOI: 10.1143/JJAP.50.08LB16(Journal) (6693202-N) DOI: 10.7567/JJAP.50.08LB16(Journal) ========================================================== Created: 2023-01-05 12:16:13 ConfID: 6693203 CauseID: 1557138569 OtherID: 1363324668 JT: Japanese Journal of Applied Physics MD: Cao,50,9s2,915,2011,Vibration Energy Harvesting Characterization of 1 cm2 Poly(vinylidene fluoride) Generators in Vacuum DOI: 10.1143/JJAP.50.09ND15(Journal) (6693203-N) DOI: 10.7567/JJAP.50.09ND15(Journal) ========================================================== Created: 2023-01-05 12:16:13 ConfID: 6693200 CauseID: 1557138568 OtherID: 1363324601 JT: Japanese Journal of Applied Physics MD: Kikukawa,50,9s1,902,2011,Proposal of a Design Principle of Multilayer Media DOI: 10.1143/JJAP.50.09MF02(Journal) (6693200-N) DOI: 10.7567/JJAP.50.09MF02(Journal) ========================================================== Created: 2023-01-05 12:16:11 ConfID: 6693201 CauseID: 1557138566 OtherID: 1363324591 JT: Japanese Journal of Applied Physics MD: Seo,50,9s1,904,2011,Nonlinear Equalization for Super-Resolution Near-Field Structure Discs Using a Simplicial Canonical Piecewise-Linear Model DOI: 10.1143/JJAP.50.09MB04(Journal) (6693201-N) DOI: 10.7567/JJAP.50.09MB04(Journal) ========================================================== Created: 2023-01-05 12:16:12 ConfID: 6693214 CauseID: 1557138567 OtherID: 1363324652 JT: Japanese Journal of Applied Physics MD: Wada,50,9s2,908,2011,Preparation of Barium Titanate–Potassium Niobate Nanostructured Ceramics with Artificial Morphotropic Phase Boundary Structure By Solvothermal Method DOI: 10.1143/JJAP.50.09NC08(Journal) (6693214-N) DOI: 10.7567/JJAP.50.09NC08(Journal) ========================================================== Created: 2023-01-05 12:16:29 ConfID: 6693215 CauseID: 1557138589 OtherID: 1363324439 JT: Japanese Journal of Applied Physics MD: Kajita,50,8s1,801,2011,Development of Nanostructured Black Metal by Self-Growing Helium Bubbles for Optical Application DOI: 10.1143/JJAP.50.08JG01(Journal) (6693215-N) DOI: 10.7567/JJAP.50.08JG01(Journal) ========================================================== Created: 2023-01-05 12:16:22 ConfID: 6693212 CauseID: 1557138583 OtherID: 1363324444 JT: Japanese Journal of Applied Physics MD: Ogino,50,8s1,806,2011,Optimization of Amino Group Introduction onto Polyurethane Surface Using Ammonia and Argon Surface-Wave Plasma DOI: 10.1143/JJAP.50.08JF06(Journal) (6693212-N) DOI: 10.7567/JJAP.50.08JF06(Journal) ========================================================== Created: 2023-01-05 12:16:23 ConfID: 6693213 CauseID: 1557138584 OtherID: 1363324673 JT: Japanese Journal of Applied Physics MD: Zhang,50,9s2,918,2011,Fabrication of Low-Residual-Stress AlN Thin Films and Their Application to Microgenerators for Vibration Energy Harvesting DOI: 10.1143/JJAP.50.09ND18(Journal) (6693213-N) DOI: 10.7567/JJAP.50.09ND18(Journal) ========================================================== Created: 2023-01-05 12:16:20 ConfID: 6693210 CauseID: 1557138580 OtherID: 1363324619 JT: Japanese Journal of Applied Physics MD: Tanaka,50,9s1,902,2011,Two-photon Recording and Plasmon-Enhanced Read-Out of Three-Dimensional Optical Disk with Ten Recording Layers DOI: 10.1143/JJAP.50.09MG02(Journal) (6693210-N) DOI: 10.7567/JJAP.50.09MG02(Journal) ========================================================== Created: 2023-01-05 12:16:22 ConfID: 6693211 CauseID: 1557138582 OtherID: 1363324487 JT: Japanese Journal of Applied Physics MD: Cardenas,50,8s3,802,2011,Transformations of Molecular Frameworks by Host–Guest Response: Novel Routes toward Two-Dimensional Self-Assembly at the Solid–Liquid Interface DOI: 10.1143/JJAP.50.08LA02(Journal) (6693211-N) DOI: 10.7567/JJAP.50.08LA02(Journal) ========================================================== Created: 2023-01-05 12:16:17 ConfID: 6693208 CauseID: 1557138577 OtherID: 1363324569 JT: Japanese Journal of Applied Physics MD: Hashizume,50,9s1,902,2011,Non-contact Deformable Mirror Actuator for Spherical Aberration Compensation DOI: 10.1143/JJAP.50.09MA02(Journal) (6693208-N) DOI: 10.7567/JJAP.50.09MA02(Journal) ========================================================== Created: 2023-01-05 12:16:18 ConfID: 6693209 CauseID: 1557138578 OtherID: 1363324674 JT: Japanese Journal of Applied Physics MD: Isohama,50,9s2,904,2011,Intrinsic Effect of the Electric Field on Ti–O Bonding in Ferroelectric BaTiO3 Probed by Resonant X-ray Emission Spectroscopy DOI: 10.1143/JJAP.50.09NE04(Journal) (6693209-N) DOI: 10.7567/JJAP.50.09NE04(Journal) ========================================================== Created: 2023-01-05 12:15:43 ConfID: 6693158 CauseID: 1557138510 OtherID: 1363324461 JT: Japanese Journal of Applied Physics MD: Huang,50,8s2,804,2011,Enhancement in Electron Field Emission of Microcrystalline Diamond Films upon Iron Coating and Annealing Processes DOI: 10.1143/JJAP.50.08KE04(Journal) (6693158-N) DOI: 10.7567/JJAP.50.08KE04(Journal) ========================================================== Created: 2023-01-05 12:15:41 ConfID: 6693159 CauseID: 1557138513 OtherID: 1363324384 JT: Japanese Journal of Applied Physics MD: Pejović,50,8r,86001,2011,Experimental Investigation of Breakdown Voltage and Electrical Breakdown Time Delay of Commercial Gas Discharge Tubes DOI: 10.1143/JJAP.50.086001(Journal) (6693159-N) DOI: 10.7567/JJAP.50.086001(Journal) ========================================================== Created: 2023-01-05 12:15:43 ConfID: 6693156 CauseID: 1557138509 OtherID: 1363324395 JT: Japanese Journal of Applied Physics MD: Takemoto,50,8r,88001,2011,Low Sheet Resistivity of Transparent Ga-Doped ZnO Film Grown by Atmospheric Spray Pyrolysis DOI: 10.1143/JJAP.50.088001(Journal) (6693156-N) DOI: 10.7567/JJAP.50.088001(Journal) ========================================================== Created: 2023-01-05 12:15:40 ConfID: 6693157 CauseID: 1557138512 OtherID: 1363324445 JT: Japanese Journal of Applied Physics MD: Harigai,50,8s1,812,2011,Formation of Nanofibers on the Surface of Diamond-Like Carbon Films by RF Oxygen Plasma Etching DOI: 10.1143/JJAP.50.08JF12(Journal) (6693157-N) DOI: 10.7567/JJAP.50.08JF12(Journal) ========================================================== Created: 2023-01-05 12:15:40 ConfID: 6693154 CauseID: 1557138507 OtherID: 1363324397 JT: Japanese Journal of Applied Physics MD: Takao,50,8s1,802,2011,Particle Simulations of Sheath Dynamics in Low-Pressure Capacitively Coupled Argon Plasma Discharges DOI: 10.1143/JJAP.50.08JC02(Journal) (6693154-N) DOI: 10.7567/JJAP.50.08JC02(Journal) ========================================================== Created: 2023-01-05 12:15:42 ConfID: 6693155 CauseID: 1557138505 OtherID: 1363324544 JT: Japanese Journal of Applied Physics MD: Kitai,50,9r,95002,2011,Simple Method of Synthesizing Nickel–Nitrilotriacetic Acid Gold Nanoparticles with a Narrow Size Distribution for Protein Labeling DOI: 10.1143/JJAP.50.095002(Journal) (6693155-N) DOI: 10.7567/JJAP.50.095002(Journal) ========================================================== Created: 2023-01-05 12:15:37 ConfID: 6693152 CauseID: 1557138500 OtherID: 1363324567 JT: Japanese Journal of Applied Physics MD: Nakahara,50,9s1,901,2011,One-Beam Push–Pull Method with Simple Holographic Optical Element for Multilayer Blu-ray Discs DOI: 10.1143/JJAP.50.09MA01(Journal) (6693152-N) DOI: 10.7567/JJAP.50.09MA01(Journal) ========================================================== Created: 2023-01-05 12:15:38 ConfID: 6693153 CauseID: 1557138501 OtherID: 1363324382 JT: Japanese Journal of Applied Physics MD: Lu,50,8r,85702,2011,Improvement of Photoelectrochemical Properties by Surface Modification with Iron Oxide on p-Type Si Electrodes for Hydrogen Evolution from Water DOI: 10.1143/JJAP.50.085702(Journal) (6693153-N) DOI: 10.7567/JJAP.50.085702(Journal) ========================================================== Created: 2023-01-05 12:15:49 ConfID: 6693166 CauseID: 1557138524 OtherID: 1363326708 JT: Japanese Journal of Applied Physics MD: Kim,50,9s1,906,2011,Adaptive Trellis Using Interim Maximum-Likelihood Detector Output for a Holographic Storage System DOI: 10.1143/JJAP.50.09ME06(Journal) (6693166-N) DOI: 10.7567/JJAP.50.09ME06(Journal) ========================================================== Created: 2023-01-05 12:15:50 ConfID: 6693167 CauseID: 1557138527 OtherID: 1363324658 JT: Japanese Journal of Applied Physics MD: Akishige,50,9s2,910,2011,Synthesis and Dielectric Properties of Mn-Doped BaTi2O5 Ceramics DOI: 10.1143/JJAP.50.09NC10(Journal) (6693167-N) DOI: 10.7567/JJAP.50.09NC10(Journal) ========================================================== Created: 2023-01-05 12:15:47 ConfID: 6693164 CauseID: 1557138521 OtherID: 1363324586 JT: Japanese Journal of Applied Physics MD: Saita,50,9s1,903,2011,Design of Reference Pattern and Input Phase Mask for Coaxial Holographic Memory DOI: 10.1143/JJAP.50.09ME03(Journal) (6693164-N) DOI: 10.7567/JJAP.50.09ME03(Journal) ========================================================== Created: 2023-01-05 12:15:48 ConfID: 6693165 CauseID: 1557138522 OtherID: 1363324471 JT: Japanese Journal of Applied Physics MD: Ashida,50,8s2,803,2011,Reactive Sputter Deposition of SiOxNy Films under Ar–CO2–N2 Atmosphere DOI: 10.1143/JJAP.50.08KE03(Journal) (6693165-N) DOI: 10.7567/JJAP.50.08KE03(Journal) ========================================================== Created: 2023-01-05 12:15:46 ConfID: 6693162 CauseID: 1557138518 OtherID: 1363324582 JT: Japanese Journal of Applied Physics MD: Ide,50,9s1,901,2011,Analysis of Phase Multilevel Recording on Microholograms DOI: 10.1143/JJAP.50.09ME01(Journal) (6693162-N) DOI: 10.7567/JJAP.50.09ME01(Journal) ========================================================== Created: 2023-01-05 12:15:46 ConfID: 6693163 CauseID: 1557138519 OtherID: 1363324517 JT: Japanese Journal of Applied Physics MD: Bae,50,9r,92301,2011,Improved Photovoltaic Effects of a Vertical-Type InGaN/GaN Multiple Quantum Well Solar Cell DOI: 10.1143/JJAP.50.092301(Journal) (6693163-N) DOI: 10.7567/JJAP.50.092301(Journal) ========================================================== Created: 2023-01-05 12:15:42 ConfID: 6693160 CauseID: 1557138514 OtherID: 1363324576 JT: Japanese Journal of Applied Physics MD: Inoue,50,9r,98001,2011,Soft X-ray Conversion Efficiencies in Laser-Produced Xenon and Tin Plasmas in a 5–17 nm Wavelength Range DOI: 10.1143/JJAP.50.098001(Journal) (6693160-N) DOI: 10.7567/JJAP.50.098001(Journal) ========================================================== Created: 2023-01-05 12:15:45 ConfID: 6693161 CauseID: 1557138517 OtherID: 1363324441 JT: Japanese Journal of Applied Physics MD: Shimizu,50,8s2,801,2011,Novel Precursors for SiCH Low-k Caps beyond the 22 nm Node: Reactions of Silacyclopentane Precursors in the Plasma-Enhanced Chemical Vapor Deposition Process and Structural Analyses of SiCH Films DOI: 10.1143/JJAP.50.08KA01(Journal) (6693161-N) DOI: 10.7567/JJAP.50.08KA01(Journal) ========================================================== Created: 2023-01-05 12:15:56 ConfID: 6693174 CauseID: 1557138536 OtherID: 1363324536 JT: Japanese Journal of Applied Physics MD: Kloub,50,9r,94301,2011,Design and Finite Element Method Analysis of Laterally Actuated Multi-Value Nano Electromechanical Switches DOI: 10.1143/JJAP.50.094301(Journal) (6693174-N) DOI: 10.7567/JJAP.50.094301(Journal) ========================================================== Created: 2023-01-05 12:15:56 ConfID: 6693175 CauseID: 1557138537 OtherID: 1363324647 JT: Japanese Journal of Applied Physics MD: Mimura,50,9s2,909,2011,Characterization of Dielectric Nanocubes Ordered Structures Fabricated by Solution Self-Assembly Process DOI: 10.1143/JJAP.50.09NC09(Journal) (6693175-N) DOI: 10.7567/JJAP.50.09NC09(Journal) ========================================================== Created: 2023-01-05 12:15:53 ConfID: 6693172 CauseID: 1557138533 OtherID: 1363324403 JT: Japanese Journal of Applied Physics MD: Kuroda,50,8s1,805,2011,Spatial Profile Measurement of SiH3 Radical Flux in SiH4/H2 Microwave Plasma by Modified Appearance Mass Spectrometry DOI: 10.1143/JJAP.50.08JB05(Journal) (6693172-N) DOI: 10.7567/JJAP.50.08JB05(Journal) ========================================================== Created: 2023-01-05 12:15:54 ConfID: 6693173 CauseID: 1557138534 OtherID: 1363324539 JT: Japanese Journal of Applied Physics MD: Kageshima,50,9r,95601,2011,Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface DOI: 10.1143/JJAP.50.095601(Journal) (6693173-N) DOI: 10.7567/JJAP.50.095601(Journal) ========================================================== Created: 2023-01-05 12:15:52 ConfID: 6693170 CauseID: 1557138530 OtherID: 1363324657 JT: Japanese Journal of Applied Physics MD: Takeoka,50,9s2,906,2011,Effect of Internal Electrode Materials in Multilayer Ceramic Capacitors on Electrical Properties DOI: 10.1143/JJAP.50.09NC06(Journal) (6693170-N) DOI: 10.7567/JJAP.50.09NC06(Journal) ========================================================== Created: 2023-01-05 12:15:52 ConfID: 6693171 CauseID: 1557138531 OtherID: 1363324438 JT: Japanese Journal of Applied Physics MD: Tsai,50,8s2,802,2011,Surface Modification of Polypropylene Membrane by RF Methane/Oxygen Mixture Plasma Treatment DOI: 10.1143/JJAP.50.08KA02(Journal) (6693171-N) DOI: 10.7567/JJAP.50.08KA02(Journal) ========================================================== Created: 2023-01-05 12:15:50 ConfID: 6693168 CauseID: 1557138528 OtherID: 1363324598 JT: Japanese Journal of Applied Physics MD: Kim,50,9s1,906,2011,Error-Correcting 6/8 Modulation Code for Reducing Two-Dimensional Intersymbol Interference DOI: 10.1143/JJAP.50.09MB06(Journal) (6693168-N) DOI: 10.7567/JJAP.50.09MB06(Journal) ========================================================== Created: 2023-01-05 12:15:51 ConfID: 6693169 CauseID: 1557138529 OtherID: 1363324580 JT: Japanese Journal of Applied Physics MD: Hiramatsu,50,9s1,904,2011,Multiresolution Coding Using Amplitude and Phase Modulations for Holographic Data Storage DOI: 10.1143/JJAP.50.09ME04(Journal) (6693169-N) DOI: 10.7567/JJAP.50.09ME04(Journal) ========================================================== Created: 2023-01-05 12:16:00 ConfID: 6693182 CauseID: 1557138544 OtherID: 1363324560 JT: Japanese Journal of Applied Physics MD: Maxim,50,9r,97302,2011,Numerical Analysis of the Microwave Heating of Compacted Copper Powders in Single-Mode Cavity DOI: 10.1143/JJAP.50.097302(Journal) (6693182-N) DOI: 10.7567/JJAP.50.097302(Journal) ========================================================== Created: 2023-01-05 12:16:01 ConfID: 6693183 CauseID: 1557138545 OtherID: 1363324648 JT: Japanese Journal of Applied Physics MD: Ishii,50,9s2,904,2011,One-Directional Grain-Orientation Control of Piezoelectric Ceramics with Tungsten Bronze Structure by Spin-Forming-Extended Method DOI: 10.1143/JJAP.50.09ND04(Journal) (6693183-N) DOI: 10.7567/JJAP.50.09ND04(Journal) ========================================================== Created: 2023-01-05 12:15:59 ConfID: 6693180 CauseID: 1557138542 OtherID: 1363324587 JT: Japanese Journal of Applied Physics MD: Wang,50,9s1,904,2011,Ultra High Density Scanning Electrical Probe Phase-Change Memory for Archival Storage DOI: 10.1143/JJAP.50.09MD04(Journal) (6693180-N) DOI: 10.7567/JJAP.50.09MD04(Journal) ========================================================== Created: 2023-01-05 12:16:00 ConfID: 6693181 CauseID: 1557138543 OtherID: 1363324546 JT: Japanese Journal of Applied Physics MD: Mitsumori,50,9r,95004,2011,Micro-Pump–Probe Spectroscopy of an Exciton in a Single Semiconductor Quantum Dot Using a Heterodyne Technique DOI: 10.1143/JJAP.50.095004(Journal) (6693181-N) DOI: 10.7567/JJAP.50.095004(Journal) ========================================================== Created: 2023-01-05 12:15:58 ConfID: 6693178 CauseID: 1557138540 OtherID: 1363324431 JT: Japanese Journal of Applied Physics MD: Kimura,50,8s1,804,2011,Deposition of Fluorinated Diamond-Like-Carbon Films by Exposure of Electrothermal Pulsed Plasmas DOI: 10.1143/JJAP.50.08JD04(Journal) (6693178-N) DOI: 10.7567/JJAP.50.08JD04(Journal) ========================================================== Created: 2023-01-05 12:15:58 ConfID: 6693179 CauseID: 1557138541 OtherID: 1363324566 JT: Japanese Journal of Applied Physics MD: Kim,50,9s1,901,2011,Expectation-Maximization Based Adaptive Threshold Detection Algorithm for Multi-Level Holographic Data Storage DOI: 10.1143/JJAP.50.09MB01(Journal) (6693179-N) DOI: 10.7567/JJAP.50.09MB01(Journal) ========================================================== Created: 2023-01-05 12:15:57 ConfID: 6693176 CauseID: 1557138538 OtherID: 1363326712 JT: Japanese Journal of Applied Physics MD: Takabayashi,50,9s1,905,2011,Symbol Error Characteristics of Hybrid-Modulated Holographic Data Storage by Intensity and Multi Phase Modulation DOI: 10.1143/JJAP.50.09ME05(Journal) (6693176-N) DOI: 10.7567/JJAP.50.09ME05(Journal) ========================================================== Created: 2023-01-05 12:15:57 ConfID: 6693177 CauseID: 1557138539 OtherID: 1363324541 JT: Japanese Journal of Applied Physics MD: Iida,50,9r,95201,2011,Mechanism of Prism-Coupled Scanning Tunneling Microscope Light Emission DOI: 10.1143/JJAP.50.095201(Journal) (6693177-N) DOI: 10.7567/JJAP.50.095201(Journal) ========================================================== Created: 2023-01-05 12:15:22 ConfID: 6693126 CauseID: 1557138473 OtherID: 1363324477 JT: Japanese Journal of Applied Physics MD: Katsui,50,8s3,808,2011,Photoabsorption Properties in InAs Wire Structures Investigated by Dual Light Illumination Method in Scanning Tunneling Microscopy DOI: 10.1143/JJAP.50.08LB08(Journal) (6693126-N) DOI: 10.7567/JJAP.50.08LB08(Journal) ========================================================== Created: 2023-01-05 12:15:23 ConfID: 6693127 CauseID: 1557138475 OtherID: 1363323015 JT: Japanese Journal of Applied Physics MD: Zhang,50,12r,122703,2011,Passively Mode-Locked Nd:YVO4 Laser Using a Single-Walled Carbon Nanotube Saturable Absorber Pumped by 880 nm Laser Diode DOI: 10.1143/JJAP.50.122703(Journal) (6693127-N) DOI: 10.7567/JJAP.50.122703(Journal) ========================================================== Created: 2023-01-05 12:15:21 ConfID: 6693124 CauseID: 1557138472 OtherID: 1363324440 JT: Japanese Journal of Applied Physics MD: Nakamiya,50,8s1,810,2011,Pulsed Neodymium-Doped Yttrium Aluminum Garnet Laser Heating of Multiwalled Carbon Nanotube Film DOI: 10.1143/JJAP.50.08JF10(Journal) (6693124-N) DOI: 10.7567/JJAP.50.08JF10(Journal) ========================================================== Created: 2023-01-05 12:15:22 ConfID: 6693125 CauseID: 1557138474 OtherID: 1363324550 JT: Japanese Journal of Applied Physics MD: Morosawa,50,9r,96502,2011,Self-Aligned Top-Gate Oxide Thin-Film Transistor Formed by Aluminum Reaction Method DOI: 10.1143/JJAP.50.096502(Journal) (6693125-N) DOI: 10.7567/JJAP.50.096502(Journal) ========================================================== Created: 2023-01-05 12:15:24 ConfID: 6693122 CauseID: 1557138470 OtherID: 1363324401 JT: Japanese Journal of Applied Physics MD: Dujko,50,8s1,801,2011,Boltzmann Equation Analysis of Electron Transport in a N2–O2 Streamer Discharge DOI: 10.1143/JJAP.50.08JC01(Journal) (6693122-N) DOI: 10.7567/JJAP.50.08JC01(Journal) ========================================================== Created: 2023-01-05 12:15:20 ConfID: 6693123 CauseID: 1557138471 OtherID: 1363324543 JT: Japanese Journal of Applied Physics MD: Ishii,50,9r,96002,2011,Discharge Luminescence Characteristics of Ultrahigh-Resolution Plasma Display Panels with a 0.3-mm Pixel Pitch DOI: 10.1143/JJAP.50.096002(Journal) (6693123-N) DOI: 10.7567/JJAP.50.096002(Journal) ========================================================== Created: 2023-01-05 12:15:17 ConfID: 6693120 CauseID: 1557138463 OtherID: 1363324398 JT: Japanese Journal of Applied Physics MD: Sasaki,50,8s1,802,2011,Estimations of Electron Temperature and Electron Density in Argon-Containing Reactive Plasma Based on Diode Laser Absorption Spectroscopy DOI: 10.1143/JJAP.50.08JB02(Journal) (6693120-N) DOI: 10.7567/JJAP.50.08JB02(Journal) ========================================================== Created: 2023-01-05 12:15:23 ConfID: 6693121 CauseID: 1557138469 OtherID: 1363324525 JT: Japanese Journal of Applied Physics MD: Ito,50,9r,91602,2011,Quadrimolecular Recombination of Persistent Photocarriers in Surface-Type Photocells of Regioregular Poly(3-hexylthiophene)/Methanofullerene Composites DOI: 10.1143/JJAP.50.091602(Journal) (6693121-N) DOI: 10.7567/JJAP.50.091602(Journal) ========================================================== Created: 2023-01-05 12:15:26 ConfID: 6693134 CauseID: 1557138481 OtherID: 1363324498 JT: Japanese Journal of Applied Physics MD: Noborio,50,9r,90201,2011,Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices DOI: 10.1143/JJAP.50.090201(Journal) (6693134-N) DOI: 10.7567/JJAP.50.090201(Journal) ========================================================== Created: 2023-01-05 12:15:27 ConfID: 6693135 CauseID: 1557138482 OtherID: 1363324386 JT: Japanese Journal of Applied Physics MD: Itoh,50,8r,87203,2011,Analysis of Size Dependence of Quality Factor of Quartz-Crystal Tuning Fork DOI: 10.1143/JJAP.50.087203(Journal) (6693135-N) DOI: 10.7567/JJAP.50.087203(Journal) ========================================================== Created: 2023-01-05 12:15:29 ConfID: 6693132 CauseID: 1557138479 OtherID: 1363323014 JT: Japanese Journal of Applied Physics MD: Kagawa,50,12r,122203,2011,Polarization Dependences of Two-Photon Absorption in Si and GaAs Photodiodes at a Wavelength of 1.55 µm DOI: 10.1143/JJAP.50.122203(Journal) (6693132-N) DOI: 10.7567/JJAP.50.122203(Journal) ========================================================== Created: 2023-01-05 12:15:25 ConfID: 6693133 CauseID: 1557138480 OtherID: 1363324430 JT: Japanese Journal of Applied Physics MD: Gatilova,50,8s1,802,2011,Addition of Si-Containing Gases for Anisotropic Etching of III–V Materials in Chlorine-Based Inductively Coupled Plasma DOI: 10.1143/JJAP.50.08JE02(Journal) (6693133-N) DOI: 10.7567/JJAP.50.08JE02(Journal) ========================================================== Created: 2023-01-05 12:15:29 ConfID: 6693130 CauseID: 1557138478 OtherID: 1363324518 JT: Japanese Journal of Applied Physics MD: Chung,50,9r,92701,2011,Volume Bragg Grating-Based 70 nm Tunable and Narrow Output Spectra from a Ti:sapphire Laser DOI: 10.1143/JJAP.50.092701(Journal) (6693130-N) DOI: 10.7567/JJAP.50.092701(Journal) ========================================================== Created: 2023-01-05 12:15:20 ConfID: 6693131 CauseID: 1557138468 OtherID: 1363324545 JT: Japanese Journal of Applied Physics MD: Shimahara,50,9r,95502,2011,Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy DOI: 10.1143/JJAP.50.095502(Journal) (6693131-N) DOI: 10.7567/JJAP.50.095502(Journal) ========================================================== Created: 2023-01-05 12:15:25 ConfID: 6693128 CauseID: 1557138476 OtherID: 1363324408 JT: Japanese Journal of Applied Physics MD: Naito,50,8r,88002,2011,Lead-Free Low-Melting and Semiconductive Vanadate Glass Applicable to Low-Temperature Sealing DOI: 10.1143/JJAP.50.088002(Journal) (6693128-N) DOI: 10.7567/JJAP.50.088002(Journal) ========================================================== Created: 2023-01-05 12:15:28 ConfID: 6693129 CauseID: 1557138477 OtherID: 1363324513 JT: Japanese Journal of Applied Physics MD: Zhu,50,9r,90203,2011,Laser Induced Blue Luminescence Phenomenon DOI: 10.1143/JJAP.50.090203(Journal) (6693129-N) DOI: 10.7567/JJAP.50.090203(Journal) ========================================================== Created: 2023-01-05 12:15:30 ConfID: 6693142 CauseID: 1557138490 OtherID: 1363324427 JT: Japanese Journal of Applied Physics MD: Yarmolich,50,8s1,803,2011,Characterization of Deposited Films and the Electron Beam Generated in the Pulsed Plasma Deposition Gun DOI: 10.1143/JJAP.50.08JD03(Journal) (6693142-N) DOI: 10.7567/JJAP.50.08JD03(Journal) ========================================================== Created: 2023-01-05 12:15:31 ConfID: 6693143 CauseID: 1557138491 OtherID: 1363324542 JT: Japanese Journal of Applied Physics MD: Kinemuchi,50,9r,95202,2011,Fixation of Surface-Modified Polydiacetylene Nano/Microcrystals on Substrates DOI: 10.1143/JJAP.50.095202(Journal) (6693143-N) DOI: 10.7567/JJAP.50.095202(Journal) ========================================================== Created: 2023-01-05 12:15:33 ConfID: 6693140 CauseID: 1557138487 OtherID: 1363324510 JT: Japanese Journal of Applied Physics MD: Kim,50,9r,90202,2011,AC Stress-Induced Degradation of Amorphous InGaZnO Thin Film Transistor Inverter DOI: 10.1143/JJAP.50.090202(Journal) (6693140-N) DOI: 10.7567/JJAP.50.090202(Journal) ========================================================== Created: 2023-01-05 12:15:34 ConfID: 6693141 CauseID: 1557138489 OtherID: 1363324511 JT: Japanese Journal of Applied Physics MD: Ishiyama,50,9r,91301,2011,Palladium–Hydrogen Complex in Silicon Observed by Electron Spin Resonance Measurement DOI: 10.1143/JJAP.50.091301(Journal) (6693141-N) DOI: 10.7567/JJAP.50.091301(Journal) ========================================================== Created: 2023-01-05 12:15:30 ConfID: 6693138 CauseID: 1557138486 OtherID: 1363324639 JT: Japanese Journal of Applied Physics MD: Park,50,9s2,903,2011,Preparation of BiFe0.9Co0.1O3 Films by Pulsed Laser Deposition under Magnetic Field DOI: 10.1143/JJAP.50.09NB03(Journal) (6693138-N) DOI: 10.7567/JJAP.50.09NB03(Journal) ========================================================== Created: 2023-01-05 12:15:34 ConfID: 6693139 CauseID: 1557138488 OtherID: 1363324374 JT: Japanese Journal of Applied Physics MD: Kuwajima,50,8r,85504,2011,Fabrication of Carbon Nanotube/Zinc Oxide Composite Films by Electrodeposition DOI: 10.1143/JJAP.50.085504(Journal) (6693139-N) DOI: 10.7567/JJAP.50.085504(Journal) ========================================================== Created: 2023-01-05 12:15:27 ConfID: 6693136 CauseID: 1557138483 OtherID: 1363324497 JT: Japanese Journal of Applied Physics MD: Midorikawa,50,9r,90001,2011,High-Order Harmonic Generation and Attosecond Science DOI: 10.1143/JJAP.50.090001(Journal) (6693136-N) DOI: 10.7567/JJAP.50.090001(Journal) ========================================================== Created: 2023-01-05 12:15:28 ConfID: 6693137 CauseID: 1557138484 OtherID: 1363324470 JT: Japanese Journal of Applied Physics MD: Hayashi,50,8s2,801,2011,Measurement of Negative Ions Generated on the Si Etched Surface DOI: 10.1143/JJAP.50.08KB01(Journal) (6693137-N) DOI: 10.7567/JJAP.50.08KB01(Journal) ========================================================== Created: 2023-01-05 12:15:37 ConfID: 6693150 CauseID: 1557138499 OtherID: 1363324551 JT: Japanese Journal of Applied Physics MD: Sougawa,50,9r,95503,2011,Crystal Structure of New Carbon–Nitride-Related Material C2N2(CH2) DOI: 10.1143/JJAP.50.095503(Journal) (6693150-N) DOI: 10.7567/JJAP.50.095503(Journal) ========================================================== Created: 2023-01-05 12:15:39 ConfID: 6693151 CauseID: 1557138502 OtherID: 1363324562 JT: Japanese Journal of Applied Physics MD: Maruyama,50,9r,98005,2011,A New Tool for Real-Time Monitoring of Photon-Beam Irradiation Using Positron Production in Radiotherapy DOI: 10.1143/JJAP.50.098005(Journal) (6693151-N) DOI: 10.7567/JJAP.50.098005(Journal) ========================================================== Created: 2023-01-05 12:15:35 ConfID: 6693148 CauseID: 1557138497 OtherID: 1363324538 JT: Japanese Journal of Applied Physics MD: Sato,50,9r,96401,2011,Charge Collection Process of a Liquid-Phase Epitaxially Grown InSb Detector DOI: 10.1143/JJAP.50.096401(Journal) (6693148-N) DOI: 10.7567/JJAP.50.096401(Journal) ========================================================== Created: 2023-01-05 12:15:36 ConfID: 6693149 CauseID: 1557138498 OtherID: 1363324577 JT: Japanese Journal of Applied Physics MD: Habuka,50,9r,96505,2011,Langasite Crystal Microbalance for Development of Reactive Surface Preparation of Silicon Carbide Film Deposition from Monomethylsilane Gas DOI: 10.1143/JJAP.50.096505(Journal) (6693149-N) DOI: 10.7567/JJAP.50.096505(Journal) ========================================================== Created: 2023-01-05 12:15:32 ConfID: 6693146 CauseID: 1557138494 OtherID: 1363324460 JT: Japanese Journal of Applied Physics MD: Kawakami,50,8s2,801,2011,Damage Characteristics of TiO2 Thin Film Surfaces Etched by Capacitively Coupled Radio Frequency Helium Plasmas DOI: 10.1143/JJAP.50.08KD01(Journal) (6693146-N) DOI: 10.7567/JJAP.50.08KD01(Journal) ========================================================== Created: 2023-01-05 12:15:39 ConfID: 6693147 CauseID: 1557138496 OtherID: 1363326713 JT: Japanese Journal of Applied Physics MD: Kim,50,9s1,907,2011,Focusing Error Detection Method in Microholographic Data Storage System Using Polarization Characteristics DOI: 10.1143/JJAP.50.09ME07(Journal) (6693147-N) DOI: 10.7567/JJAP.50.09ME07(Journal) ========================================================== Created: 2023-01-05 12:15:31 ConfID: 6693144 CauseID: 1557138492 OtherID: 1363324552 JT: Japanese Journal of Applied Physics MD: Mahdavi,50,9r,94401,2011,Single Electron Fault Modeling in Basic Quantum Devices DOI: 10.1143/JJAP.50.094401(Journal) (6693144-N) DOI: 10.7567/JJAP.50.094401(Journal) ========================================================== Created: 2023-01-05 12:15:32 ConfID: 6693145 CauseID: 1557138493 OtherID: 1363324500 JT: Japanese Journal of Applied Physics MD: Kitazawa,50,8s3,814,2011,High-Resolution Imaging of Plasmid DNA in Liquids in Dynamic Mode Atomic Force Microscopy Using a Carbon Nanofiber Tip DOI: 10.1143/JJAP.50.08LB14(Journal) (6693145-N) DOI: 10.7567/JJAP.50.08LB14(Journal) ========================================================== Created: 2023-01-05 12:18:02 ConfID: 6693350 CauseID: 1557138752 OtherID: 1363324664 JT: Japanese Journal of Applied Physics MD: Yoshida,50,9s2,913,2011,Piezoelectric Motion of Multilayer Film with Alternate Rows of Optical Isomers of Chiral Polymer Film DOI: 10.1143/JJAP.50.09ND13(Journal) (6693350-N) DOI: 10.7567/JJAP.50.09ND13(Journal) ========================================================== Created: 2023-01-05 12:18:03 ConfID: 6693351 CauseID: 1557138754 OtherID: 1363326705 JT: Japanese Journal of Applied Physics MD: Tsuji,50,9s1,904,2011,Parallel Signal Readout for Roll-Type Optical Advanced Memory DOI: 10.1143/JJAP.50.09MF04(Journal) (6693351-N) DOI: 10.7567/JJAP.50.09MF04(Journal) ========================================================== Created: 2023-01-05 12:18:00 ConfID: 6693348 CauseID: 1557138750 OtherID: 1363322860 JT: Japanese Journal of Applied Physics MD: Kuo,50,10r,105003,2011,Bipolar Thermoelectric Effect in a Serially Coupled Quantum Dot System DOI: 10.1143/JJAP.50.105003(Journal) (6693348-N) DOI: 10.7567/JJAP.50.105003(Journal) ========================================================== Created: 2023-01-05 12:18:01 ConfID: 6693349 CauseID: 1557138751 OtherID: 1363325467 JT: Japanese Journal of Applied Physics MD: Eriguchi,50,10s,1002,2011,Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal–Oxide–Semiconductor Field-Effect Transistor DOI: 10.1143/JJAP.50.10PG02(Journal) (6693349-N) DOI: 10.7567/JJAP.50.10PG02(Journal) ========================================================== Created: 2023-01-05 12:17:59 ConfID: 6693346 CauseID: 1557138748 OtherID: 1363325460 JT: Japanese Journal of Applied Physics MD: Kouda,50,10s,1006,2011,Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes DOI: 10.1143/JJAP.50.10PA06(Journal) (6693346-N) DOI: 10.7567/JJAP.50.10PA06(Journal) ========================================================== Created: 2023-01-05 12:18:00 ConfID: 6693347 CauseID: 1557138749 OtherID: 1363324685 JT: Japanese Journal of Applied Physics MD: Uehara,50,9s2,913,2011,Influence of Optical Purity on Stability of Chiral Smectic-C Phase in Antiferroelectric Liquid Crystal under Pressure DOI: 10.1143/JJAP.50.09NE13(Journal) (6693347-N) DOI: 10.7567/JJAP.50.09NE13(Journal) ========================================================== Created: 2023-01-05 12:17:58 ConfID: 6693344 CauseID: 1557138746 OtherID: 1363324676 JT: Japanese Journal of Applied Physics MD: Park,50,9s2,919,2011,Fabrication and Characterization of Optical Micro-Electro-Mechanical System Scanning Devices Using BaTiO3-Based Lead-Free Piezoelectric-Coated Substrate Sheet by Aerosol Deposition DOI: 10.1143/JJAP.50.09ND19(Journal) (6693344-N) DOI: 10.7567/JJAP.50.09ND19(Journal) ========================================================== Created: 2023-01-05 12:17:58 ConfID: 6693345 CauseID: 1557138747 OtherID: 1363322879 JT: Japanese Journal of Applied Physics MD: Tanahashi,50,10r,105001,2011,Linear and Femtosecond Optical Nonlinear Properties of Au/Al2O3 Thin Films Prepared by a Sputtering Method DOI: 10.1143/JJAP.50.105001(Journal) (6693345-N) DOI: 10.7567/JJAP.50.105001(Journal) ========================================================== Created: 2023-01-05 12:18:08 ConfID: 6693358 CauseID: 1557138764 OtherID: 1363324621 JT: Japanese Journal of Applied Physics MD: Nakashima,50,9s2,901,2011,Preparation of BiFeO3 Thin Films on SrRuO3/SrTiO3(001) Substrate by Dual Ion Beam Sputtering DOI: 10.1143/JJAP.50.09NB01(Journal) (6693358-N) DOI: 10.7567/JJAP.50.09NB01(Journal) ========================================================== Created: 2023-01-05 12:18:08 ConfID: 6693359 CauseID: 1557138765 OtherID: 1363322894 JT: Japanese Journal of Applied Physics MD: Hsieh,50,10r,106601,2011,Magnetization Reversal in Different Magnetic Thin Films Studied Using a Magnetic Actuator DOI: 10.1143/JJAP.50.106601(Journal) (6693359-N) DOI: 10.7567/JJAP.50.106601(Journal) ========================================================== Created: 2023-01-05 12:18:07 ConfID: 6693356 CauseID: 1557138763 OtherID: 1363322824 JT: Japanese Journal of Applied Physics MD: Gu,50,10r,100207,2011,Wavelength Trimming of Vertical-Cavity Surface-Emitting Lasers with High-Contrast Subwavelength Grating DOI: 10.1143/JJAP.50.100207(Journal) (6693356-N) DOI: 10.7567/JJAP.50.100207(Journal) ========================================================== Created: 2023-01-05 12:18:07 ConfID: 6693357 CauseID: 1557138762 OtherID: 1363322890 JT: Japanese Journal of Applied Physics MD: Yoshino,50,10r,108001,2011,Growth of Spin-Coated ZnO Films Using Diethylzinc Solution DOI: 10.1143/JJAP.50.108001(Journal) (6693357-N) DOI: 10.7567/JJAP.50.108001(Journal) ========================================================== Created: 2023-01-05 12:18:05 ConfID: 6693354 CauseID: 1557138760 OtherID: 1363325468 JT: Japanese Journal of Applied Physics MD: Morita,50,10s,1001,2011,Fabrication of Direct-Contact Higher-k HfO2 Gate Stacks by Oxygen-Controlled Cap Post-Deposition Annealing DOI: 10.1143/JJAP.50.10PG01(Journal) (6693354-N) DOI: 10.7567/JJAP.50.10PG01(Journal) ========================================================== Created: 2023-01-05 12:18:06 ConfID: 6693355 CauseID: 1557138761 OtherID: 1363324671 JT: Japanese Journal of Applied Physics MD: Bai,50,9s2,912,2011,Effect of Surfactants on Morphology of Niobate Hydrate Particles in Hydrothermal Synthesis DOI: 10.1143/JJAP.50.09ND12(Journal) (6693355-N) DOI: 10.7567/JJAP.50.09ND12(Journal) ========================================================== Created: 2023-01-05 12:18:04 ConfID: 6693352 CauseID: 1557138756 OtherID: 1363324602 JT: Japanese Journal of Applied Physics MD: Tashiro,50,9s1,903,2011,Volumetric Optical Recording with Void Marks Using an All-Semiconductor Picosecond Laser DOI: 10.1143/JJAP.50.09MF03(Journal) (6693352-N) DOI: 10.7567/JJAP.50.09MF03(Journal) ========================================================== Created: 2023-01-05 12:18:04 ConfID: 6693353 CauseID: 1557138757 OtherID: 1363322978 JT: Japanese Journal of Applied Physics MD: Czél,50,11s,1105,2011,Simultaneous Measurement of Temperature Dependent Thermophysical Properties DOI: 10.1143/JJAP.50.11RE05(Journal) (6693353-N) DOI: 10.7567/JJAP.50.11RE05(Journal) ========================================================== Created: 2023-01-05 12:18:13 ConfID: 6693366 CauseID: 1557138771 OtherID: 1363325450 JT: Japanese Journal of Applied Physics MD: Ohtake,50,10s,1001,2011,Impact of Cation Surface Termination on the Electrical Characteristics of HfO2/InGaAs(001) Metal–Oxide–Semiconductor Capacitors DOI: 10.1143/JJAP.50.10PD01(Journal) (6693366-N) DOI: 10.7567/JJAP.50.10PD01(Journal) ========================================================== Created: 2023-01-05 12:18:14 ConfID: 6693367 CauseID: 1557138772 OtherID: 1363324681 JT: Japanese Journal of Applied Physics MD: Furue,50,9s2,914,2011,Control of Laser Speckle Noise Using Liquid Crystals DOI: 10.1143/JJAP.50.09NE14(Journal) (6693367-N) DOI: 10.7567/JJAP.50.09NE14(Journal) ========================================================== Created: 2023-01-05 12:18:12 ConfID: 6693364 CauseID: 1557138769 OtherID: 1363325442 JT: Japanese Journal of Applied Physics MD: Saeki,50,10s,1001,2011,La Induced Passivation of High-k Bulk and Interface Defects in Polycrystalline Silicon/TiN/HfLaSiO/SiO2 Stacks DOI: 10.1143/JJAP.50.10PA01(Journal) (6693364-N) DOI: 10.7567/JJAP.50.10PA01(Journal) ========================================================== Created: 2023-01-05 12:18:13 ConfID: 6693365 CauseID: 1557138770 OtherID: 1363325462 JT: Japanese Journal of Applied Physics MD: Kwon,50,10s,1001,2011,Dependence of Hot Carrier Reliability and Low Frequency Noise on Channel Stress in Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.50.10PB01(Journal) (6693365-N) DOI: 10.7567/JJAP.50.10PB01(Journal) ========================================================== Created: 2023-01-05 12:18:11 ConfID: 6693362 CauseID: 1557138768 OtherID: 1363322832 JT: Japanese Journal of Applied Physics MD: Toyokawa,50,10r,100209,2011,Two-Dimensional Isotope Imaging of Radiation Shielded Materials Using Nuclear Resonance Fluorescence DOI: 10.1143/JJAP.50.100209(Journal) (6693362-N) DOI: 10.7567/JJAP.50.100209(Journal) ========================================================== Created: 2023-01-05 12:17:53 ConfID: 6693363 CauseID: 1557138740 OtherID: 1363324585 JT: Japanese Journal of Applied Physics MD: Kurokawa,50,9s1,901,2011,New Edge-Shift Detection Method for Write Strategy Optimization in High-Density Optical Disc Recording DOI: 10.1143/JJAP.50.09MC01(Journal) (6693363-N) DOI: 10.7567/JJAP.50.09MC01(Journal) ========================================================== Created: 2023-01-05 12:18:10 ConfID: 6693360 CauseID: 1557138766 OtherID: 1363322884 JT: Japanese Journal of Applied Physics MD: Kato,50,10r,106602,2011,Development of a Frequency-Domain Method Using Completely Optical Techniques for Measuring the Interfacial Thermal Resistance between the Metal Film and the Substrate DOI: 10.1143/JJAP.50.106602(Journal) (6693360-N) DOI: 10.7567/JJAP.50.106602(Journal) ========================================================== Created: 2023-01-05 12:18:11 ConfID: 6693361 CauseID: 1557138767 OtherID: 1363325447 JT: Japanese Journal of Applied Physics MD: Fan,50,10s,1002,2011,Improvement in Characteristics of Low-Temperature Polycrystalline Silicon Thin Film Transistors with High-Efficiency and Low-Damage N2 Plasma Pretreatment DOI: 10.1143/JJAP.50.10PC02(Journal) (6693361-N) DOI: 10.7567/JJAP.50.10PC02(Journal) ========================================================== Created: 2023-01-05 12:18:18 ConfID: 6693374 CauseID: 1557138781 OtherID: 1363324678 JT: Japanese Journal of Applied Physics MD: Miyabuchi,50,9s2,917,2011,Characterization of Direct Piezoelectric Effect in 31 and 33 Modes for Application to Vibration Energy Harvester DOI: 10.1143/JJAP.50.09ND17(Journal) (6693374-N) DOI: 10.7567/JJAP.50.09ND17(Journal) ========================================================== Created: 2023-01-05 12:18:20 ConfID: 6693375 CauseID: 1557138782 OtherID: 1363322913 JT: Japanese Journal of Applied Physics MD: Sadakuni-Makabe,50,10r,108002,2011,Dependence of Resonant Voltage on Quantum-Well Width in CaF2/Fe3Si/CaF2 Resonant Tunneling Diodes DOI: 10.1143/JJAP.50.108002(Journal) (6693375-N) DOI: 10.7567/JJAP.50.108002(Journal) ========================================================== Created: 2023-01-05 12:18:16 ConfID: 6693372 CauseID: 1557138779 OtherID: 1363324622 JT: Japanese Journal of Applied Physics MD: Kawae,50,9s2,909,2011,Influence of SrRuO3 Bottom Electrode Thickness on Electric Properties of (Bi,Pr)(Fe,Mn)O3 Ultra-Thin Film Capacitor DOI: 10.1143/JJAP.50.09NA09(Journal) (6693372-N) DOI: 10.7567/JJAP.50.09NA09(Journal) ========================================================== Created: 2023-01-05 12:18:17 ConfID: 6693373 CauseID: 1557138780 OtherID: 1363325451 JT: Japanese Journal of Applied Physics MD: Wang,50,10s,1002,2011,Electric Dipole at High-k/SiO2 Interface and Physical Origin by Dielectric Contact Induced Gap States DOI: 10.1143/JJAP.50.10PF02(Journal) (6693373-N) DOI: 10.7567/JJAP.50.10PF02(Journal) ========================================================== Created: 2023-01-05 12:18:19 ConfID: 6693370 CauseID: 1557138775 OtherID: 1363322828 JT: Japanese Journal of Applied Physics MD: Yafune,50,10r,100202,2011,Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack DOI: 10.1143/JJAP.50.100202(Journal) (6693370-N) DOI: 10.7567/JJAP.50.100202(Journal) ========================================================== Created: 2023-01-05 12:18:02 ConfID: 6693371 CauseID: 1557138753 OtherID: 1363324599 JT: Japanese Journal of Applied Physics MD: Kinoshita,50,9s1,902,2011,Angular Spacing Control for Segmented Data Pages in Angle-Multiplexed Holographic Memory DOI: 10.1143/JJAP.50.09ME02(Journal) (6693371-N) DOI: 10.7567/JJAP.50.09ME02(Journal) ========================================================== Created: 2023-01-05 12:18:18 ConfID: 6693368 CauseID: 1557138773 OtherID: 1363324661 JT: Japanese Journal of Applied Physics MD: Moriwake,50,9s2,902,2011,Anisotropic Permittivity of Tetragonal BaTiO3: A First-Principles Study DOI: 10.1143/JJAP.50.09NE02(Journal) (6693368-N) DOI: 10.7567/JJAP.50.09NE02(Journal) ========================================================== Created: 2023-01-05 12:18:19 ConfID: 6693369 CauseID: 1557138774 OtherID: 1363324672 JT: Japanese Journal of Applied Physics MD: Onozuka,50,9s2,907,2011,Crystal Growth and Characterization of (Bi0.5Na0.5)TiO3–BaTiO3 Single Crystals Obtained by a Top-Seeded Solution Growth Method under High-Pressure Oxygen Atmosphere DOI: 10.1143/JJAP.50.09NE07(Journal) (6693369-N) DOI: 10.7567/JJAP.50.09NE07(Journal) ========================================================== Created: 2023-01-05 12:17:39 ConfID: 6693318 CauseID: 1557138712 OtherID: 1363325454 JT: Japanese Journal of Applied Physics MD: Yamashita,50,10s,1002,2011,Study of High-κ/In0.53Ga0.47As Interface by Hard X-ray Photoemission Spectroscopy DOI: 10.1143/JJAP.50.10PD02(Journal) (6693318-N) DOI: 10.7567/JJAP.50.10PD02(Journal) ========================================================== Created: 2023-01-05 12:17:35 ConfID: 6693319 CauseID: 1557138714 OtherID: 1363324594 JT: Japanese Journal of Applied Physics MD: Murakami,50,9s1,902,2011,Improvement of Thermal Interference for High-Density Thermal Recording Mastering DOI: 10.1143/JJAP.50.09MD02(Journal) (6693319-N) DOI: 10.7567/JJAP.50.09MD02(Journal) ========================================================== Created: 2023-01-05 12:17:34 ConfID: 6693316 CauseID: 1557138708 OtherID: 1363324589 JT: Japanese Journal of Applied Physics MD: Kim,50,9s1,902,2011,Iterative Decoding between Two-Dimensional Soft Output Viterbi Algorithm and Error Correcting Modulation Code for Holographic Data Storage DOI: 10.1143/JJAP.50.09MB02(Journal) (6693316-N) DOI: 10.7567/JJAP.50.09MB02(Journal) ========================================================== Created: 2023-01-05 12:17:35 ConfID: 6693317 CauseID: 1557138710 OtherID: 1363325439 JT: Japanese Journal of Applied Physics MD: Homhuan,50,10s,1003,2011,Effect of Y Content in (TaC)1-xYx Gate Electrodes on Flatband Voltage Control for Hf-Based High-k Gate Stacks DOI: 10.1143/JJAP.50.10PA03(Journal) (6693317-N) DOI: 10.7567/JJAP.50.10PA03(Journal) ========================================================== Created: 2023-01-05 12:17:33 ConfID: 6693314 CauseID: 1557138705 OtherID: 1363322952 JT: Japanese Journal of Applied Physics MD: Oka,50,11s,1102,2011,Thermal Boundary Resistance between N,N '-Bis(1-naphthyl)-N,N '-diphenylbenzidine and Aluminum Films DOI: 10.1143/JJAP.50.11RB02(Journal) (6693314-N) DOI: 10.7567/JJAP.50.11RB02(Journal) ========================================================== Created: 2023-01-05 12:17:34 ConfID: 6693315 CauseID: 1557138706 OtherID: 1363324684 JT: Japanese Journal of Applied Physics MD: Ohsato,50,9s2,901,2011,Millimeter-Wave Dielectric Properties of Cordierite/Indialite Glass Ceramics DOI: 10.1143/JJAP.50.09NF01(Journal) (6693315-N) DOI: 10.7567/JJAP.50.09NF01(Journal) ========================================================== Created: 2023-01-05 12:17:31 ConfID: 6693312 CauseID: 1557138703 OtherID: 1363322877 JT: Japanese Journal of Applied Physics MD: Cahyanto,50,10r,105602,2011,Favorable Pathway of O2 Dissociative Adsorption on a Single Platinum Adatom Coated on Gamma-Alumina (111) Surface: A Density Functional Theory Study DOI: 10.1143/JJAP.50.105602(Journal) (6693312-N) DOI: 10.7567/JJAP.50.105602(Journal) ========================================================== Created: 2023-01-05 12:17:32 ConfID: 6693313 CauseID: 1557138704 OtherID: 1363324597 JT: Japanese Journal of Applied Physics MD: Tanabe,50,9s1,903,2011,Simple Readout Channel Model of Super-Resolution Near-Field Structure Disk System DOI: 10.1143/JJAP.50.09MB03(Journal) (6693313-N) DOI: 10.7567/JJAP.50.09MB03(Journal) ========================================================== Created: 2023-01-05 12:17:44 ConfID: 6693326 CauseID: 1557138720 OtherID: 1363322831 JT: Japanese Journal of Applied Physics MD: Hota,50,10r,101101,2011,Structural and Electrical Properties of Radio Frequency Sputtered HfTaOx Films for High-k Gate Insulator DOI: 10.1143/JJAP.50.101101(Journal) (6693326-N) DOI: 10.7567/JJAP.50.101101(Journal) ========================================================== Created: 2023-01-05 12:17:41 ConfID: 6693327 CauseID: 1557138722 OtherID: 1363324683 JT: Japanese Journal of Applied Physics MD: Carmignano,50,9s2,910,2011,Nanoscale Characterization of Domain Structures in Bi4Ti3O12 Single Crystals Using Near-Field Raman Spectroscopy DOI: 10.1143/JJAP.50.09NE10(Journal) (6693327-N) DOI: 10.7567/JJAP.50.09NE10(Journal) ========================================================== Created: 2023-01-05 12:17:36 ConfID: 6693324 CauseID: 1557138716 OtherID: 1363322903 JT: Japanese Journal of Applied Physics MD: Sato,50,10r,108004,2011,Effect of In2O3 Underlayer on Crystallinity of Hexagonal InN and InGaN Thin Films Grown on c-Face Sapphire Substrates DOI: 10.1143/JJAP.50.108004(Journal) (6693324-N) DOI: 10.7567/JJAP.50.108004(Journal) ========================================================== Created: 2023-01-05 12:17:44 ConfID: 6693325 CauseID: 1557138719 OtherID: 1363325452 JT: Japanese Journal of Applied Physics MD: Zade,50,10s,1003,2011,Capacitance–Voltage Characterization of La2O3 Metal–Oxide–Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods DOI: 10.1143/JJAP.50.10PD03(Journal) (6693325-N) DOI: 10.7567/JJAP.50.10PD03(Journal) ========================================================== Created: 2023-01-05 12:17:37 ConfID: 6693322 CauseID: 1557138717 OtherID: 1363322849 JT: Japanese Journal of Applied Physics MD: Inoue,50,10r,102203,2011,Spectral and Polarization Characteristics of Photonic Crystal under Normally Incident Light and Their Tuning with Liquid Crystal Control DOI: 10.1143/JJAP.50.102203(Journal) (6693322-N) DOI: 10.7567/JJAP.50.102203(Journal) ========================================================== Created: 2023-01-05 12:17:38 ConfID: 6693323 CauseID: 1557138718 OtherID: 1363324565 JT: Japanese Journal of Applied Physics MD: Shintaku,50,9r,96601,2011,Evaluation of Acoustic Anisotropy to Image Defects in Weld Metal by Ultrasonic Phased Array DOI: 10.1143/JJAP.50.096601(Journal) (6693323-N) DOI: 10.7567/JJAP.50.096601(Journal) ========================================================== Created: 2023-01-05 12:17:39 ConfID: 6693320 CauseID: 1557138713 OtherID: 1363322975 JT: Japanese Journal of Applied Physics MD: Yamashita,50,11s,1103,2011,Development of Network Database System for Thermophysical Property Data of Thin Films DOI: 10.1143/JJAP.50.11RH03(Journal) (6693320-N) DOI: 10.7567/JJAP.50.11RH03(Journal) ========================================================== Created: 2023-01-05 12:17:36 ConfID: 6693321 CauseID: 1557138715 OtherID: 1363325457 JT: Japanese Journal of Applied Physics MD: Lee,50,10s,1001,2011,p-Type Tunneling Field-Effect Transistors on (100)- and (110)-Oriented Si Substrates DOI: 10.1143/JJAP.50.10PC01(Journal) (6693321-N) DOI: 10.7567/JJAP.50.10PC01(Journal) ========================================================== Created: 2023-01-05 12:17:46 ConfID: 6693334 CauseID: 1557138729 OtherID: 1363325444 JT: Japanese Journal of Applied Physics MD: Han,50,10s,1003,2011,Effect of Nitrogen Concentration on Low-Frequency Noise and Negative Bias Temperature Instability of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Nitrided Gate Oxide DOI: 10.1143/JJAP.50.10PB03(Journal) (6693334-N) DOI: 10.7567/JJAP.50.10PB03(Journal) ========================================================== Created: 2023-01-05 12:17:47 ConfID: 6693335 CauseID: 1557138731 OtherID: 1363322951 JT: Japanese Journal of Applied Physics MD: Brillo,50,11s,1102,2011,Density of Multicomponent Melts Measured by Electromagnetic Levitation DOI: 10.1143/JJAP.50.11RD02(Journal) (6693335-N) DOI: 10.7567/JJAP.50.11RD02(Journal) ========================================================== Created: 2023-01-05 12:17:49 ConfID: 6693332 CauseID: 1557138727 OtherID: 1363324638 JT: Japanese Journal of Applied Physics MD: Mabuchi,50,9s2,905,2011,Investigation on Thickness Effect of Ultrathin Vinylidene Fluoride/Trifluoroethylene Copolymer Films DOI: 10.1143/JJAP.50.09NA05(Journal) (6693332-N) DOI: 10.7567/JJAP.50.09NA05(Journal) ========================================================== Created: 2023-01-05 12:17:46 ConfID: 6693333 CauseID: 1557138730 OtherID: 1363322844 JT: Japanese Journal of Applied Physics MD: Ekuma,50,10r,101103,2011,Ab-initio Electronic and Structural Properties of Rutile Titanium Dioxide DOI: 10.1143/JJAP.50.101103(Journal) (6693333-N) DOI: 10.7567/JJAP.50.101103(Journal) ========================================================== Created: 2023-01-05 12:17:43 ConfID: 6693330 CauseID: 1557138726 OtherID: 1363324645 JT: Japanese Journal of Applied Physics MD: Shibahara,50,9s2,912,2011,Analysis of Mechanism of Improvement in Highly Accelerated Lifetime via Measurement of Vanadium Valence in Multilayer Ceramic Capacitors DOI: 10.1143/JJAP.50.09NC12(Journal) (6693330-N) DOI: 10.7567/JJAP.50.09NC12(Journal) ========================================================== Created: 2023-01-05 12:17:45 ConfID: 6693331 CauseID: 1557138728 OtherID: 1363322839 JT: Japanese Journal of Applied Physics MD: Assafrao,50,10r,102206,2011,On the Focused Field Embedded in a Super Rens Medium DOI: 10.1143/JJAP.50.102206(Journal) (6693331-N) DOI: 10.7567/JJAP.50.102206(Journal) ========================================================== Created: 2023-01-05 12:17:42 ConfID: 6693328 CauseID: 1557138723 OtherID: 1363325463 JT: Japanese Journal of Applied Physics MD: Park,50,10s,1003,2011,Electron Accumulation in LaAlO3/SrTiO3 Interfaces by the Broken Symmetry of Crystal Field DOI: 10.1143/JJAP.50.10PF03(Journal) (6693328-N) DOI: 10.7567/JJAP.50.10PF03(Journal) ========================================================== Created: 2023-01-05 12:17:42 ConfID: 6693329 CauseID: 1557138724 OtherID: 1363325478 JT: Japanese Journal of Applied Physics MD: Lucovsky,50,10s,1004,2011,Detection of Multivalency Charge States in Complex and Elemental Transition Metal Oxides by X-ray Absorption Spectroscopy: Controlled Multivalency as a Pathway to Device Functionality DOI: 10.1143/JJAP.50.10PF04(Journal) (6693329-N) DOI: 10.7567/JJAP.50.10PF04(Journal) ========================================================== Created: 2023-01-05 12:17:55 ConfID: 6693342 CauseID: 1557138743 OtherID: 1363322887 JT: Japanese Journal of Applied Physics MD: Kumagai,50,10r,106501,2011,Flow Analysis of Photoresist Spray Coating towards Improving Coverage on Three-Dimensional Structures DOI: 10.1143/JJAP.50.106501(Journal) (6693342-N) DOI: 10.7567/JJAP.50.106501(Journal) ========================================================== Created: 2023-01-05 12:17:56 ConfID: 6693343 CauseID: 1557138745 OtherID: 1363325479 JT: Japanese Journal of Applied Physics MD: Lu,50,10s,1003,2011,Effects of Thickness Effect and Rapid Thermal Annealing on pH Sensing Characteristics of Thin HfO2 Films Formed by Atomic Layer Deposition DOI: 10.1143/JJAP.50.10PG03(Journal) (6693343-N) DOI: 10.7567/JJAP.50.10PG03(Journal) ========================================================== Created: 2023-01-05 12:17:54 ConfID: 6693340 CauseID: 1557138741 OtherID: 1363324588 JT: Japanese Journal of Applied Physics MD: Hwang,50,9s1,904,2011,High-Speed Gap Servo Control for Solid-Immersion-Lens-Based Near-Field Recording System with a Flexible Optical Disk DOI: 10.1143/JJAP.50.09MC04(Journal) (6693340-N) DOI: 10.7567/JJAP.50.09MC04(Journal) ========================================================== Created: 2023-01-05 12:17:55 ConfID: 6693341 CauseID: 1557138742 OtherID: 1363324637 JT: Japanese Journal of Applied Physics MD: Shima,50,9s2,902,2011,Thermooptic Property of Polycrystalline BiFeO3 Film DOI: 10.1143/JJAP.50.09NB02(Journal) (6693341-N) DOI: 10.7567/JJAP.50.09NB02(Journal) ========================================================== Created: 2023-01-05 12:17:51 ConfID: 6693338 CauseID: 1557138737 OtherID: 1363322861 JT: Japanese Journal of Applied Physics MD: Park,50,10r,104001,2011,Organic/Inorganic Hybrid p–n Junctions Made of Pentacene–SnO2 Nanowires Network DOI: 10.1143/JJAP.50.104001(Journal) (6693338-N) DOI: 10.7567/JJAP.50.104001(Journal) ========================================================== Created: 2023-01-05 12:17:52 ConfID: 6693339 CauseID: 1557138739 OtherID: 1363322863 JT: Japanese Journal of Applied Physics MD: Mizukami,50,10r,103003,2011,Influence of Pt Doping on Gilbert Damping in Permalloy Films and Comparison with the Perpendicularly Magnetized Alloy Films DOI: 10.1143/JJAP.50.103003(Journal) (6693339-N) DOI: 10.7567/JJAP.50.103003(Journal) ========================================================== Created: 2023-01-05 12:17:49 ConfID: 6693336 CauseID: 1557138733 OtherID: 1363322944 JT: Japanese Journal of Applied Physics MD: Baba,50,11s,1101,2011,Development of Ultrafast Laser Flash Methods for Measuring Thermophysical Properties of Thin Films and Boundary Thermal Resistances DOI: 10.1143/JJAP.50.11RA01(Journal) (6693336-N) DOI: 10.7567/JJAP.50.11RA01(Journal) ========================================================== Created: 2023-01-05 12:17:51 ConfID: 6693337 CauseID: 1557138735 OtherID: 1363324651 JT: Japanese Journal of Applied Physics MD: Doshida,50,9s2,906,2011,Nonlinear Behavior and High-Power Properties of (Bi,Na,Ba)TiO3 and (Sr,Ca)2NaNb5O15 Piezoelectric Ceramics DOI: 10.1143/JJAP.50.09ND06(Journal) (6693337-N) DOI: 10.7567/JJAP.50.09ND06(Journal) ========================================================== Created: 2023-01-05 12:17:13 ConfID: 6693286 CauseID: 1557138669 OtherID: 1363322882 JT: Japanese Journal of Applied Physics MD: Suzuki,50,10r,106002,2011,Secondary Ionization Coefficient of MgO and Accumulated Charge DOI: 10.1143/JJAP.50.106002(Journal) (6693286-N) DOI: 10.7567/JJAP.50.106002(Journal) ========================================================== Created: 2023-01-05 12:17:14 ConfID: 6693287 CauseID: 1557138671 OtherID: 1363322888 JT: Japanese Journal of Applied Physics MD: Chen,50,10r,107301,2011,Control of Droplet Generation in Flow-Focusing Microfluidic Device with a Converging-Diverging Nozzle-Shaped Section DOI: 10.1143/JJAP.50.107301(Journal) (6693287-N) DOI: 10.7567/JJAP.50.107301(Journal) ========================================================== Created: 2023-01-05 12:17:12 ConfID: 6693284 CauseID: 1557138667 OtherID: 1363322872 JT: Japanese Journal of Applied Physics MD: Luo,50,10r,105501,2011,Influence of V/III Ratio of Low Temperature Grown AlN Interlayer on the Growth of GaN on Si<111> Substrate DOI: 10.1143/JJAP.50.105501(Journal) (6693284-N) DOI: 10.7567/JJAP.50.105501(Journal) ========================================================== Created: 2023-01-05 12:17:12 ConfID: 6693285 CauseID: 1557138668 OtherID: 1363322851 JT: Japanese Journal of Applied Physics MD: Zhang,50,10r,101102,2011,Transport and Magnetic Properties in the Gd1-xCaxVO3 System DOI: 10.1143/JJAP.50.101102(Journal) (6693285-N) DOI: 10.7567/JJAP.50.101102(Journal) ========================================================== Created: 2023-01-05 12:17:10 ConfID: 6693282 CauseID: 1557138665 OtherID: 1363324649 JT: Japanese Journal of Applied Physics MD: Hoshina,50,9s2,907,2011,Shrinkage Behaviors and Sintering Mechanism of BaTiO3 Ceramics in Two-Step Sintering DOI: 10.1143/JJAP.50.09NC07(Journal) (6693282-N) DOI: 10.7567/JJAP.50.09NC07(Journal) ========================================================== Created: 2023-01-05 12:17:09 ConfID: 6693283 CauseID: 1557138662 OtherID: 1363325448 JT: Japanese Journal of Applied Physics MD: Hettiarachchi,50,10s,1004,2011,Behavior of Low-Frequency Noise in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors for Different Impurity Concentrations DOI: 10.1143/JJAP.50.10PB04(Journal) (6693283-N) DOI: 10.7567/JJAP.50.10PB04(Journal) ========================================================== Created: 2023-01-05 12:17:08 ConfID: 6693280 CauseID: 1557138661 OtherID: 1363322846 JT: Japanese Journal of Applied Physics MD: Xiong,50,10r,102602,2011,Tm3+-Doped Chalcohalide Glass for Optical Amplifiers at 1.22 and 1.47 µm DOI: 10.1143/JJAP.50.102602(Journal) (6693280-N) DOI: 10.7567/JJAP.50.102602(Journal) ========================================================== Created: 2023-01-05 12:17:10 ConfID: 6693281 CauseID: 1557138664 OtherID: 1363322854 JT: Japanese Journal of Applied Physics MD: Imai,50,10r,101801,2011,Thermal Expansion of Alkaline-Earth-Metal Disilicides AeSi2 (Ae= Ca, Sr, and Ba) DOI: 10.1143/JJAP.50.101801(Journal) (6693281-N) DOI: 10.7567/JJAP.50.101801(Journal) ========================================================== Created: 2023-01-05 12:17:18 ConfID: 6693294 CauseID: 1557138679 OtherID: 1363324608 JT: Japanese Journal of Applied Physics MD: Chen,50,9s1,909,2011,Design of Copying System for Reflection Disk-Type Multiplex Hologram DOI: 10.1143/JJAP.50.09ME09(Journal) (6693294-N) DOI: 10.7567/JJAP.50.09ME09(Journal) ========================================================== Created: 2023-01-05 12:17:19 ConfID: 6693295 CauseID: 1557138680 OtherID: 1363324623 JT: Japanese Journal of Applied Physics MD: Sasaki,50,9s2,908,2011,Effect of Dopant on Piezoelectric Properties of Lead-Free BiFeO3–BaTiO3 Film DOI: 10.1143/JJAP.50.09NA08(Journal) (6693295-N) DOI: 10.7567/JJAP.50.09NA08(Journal) ========================================================== Created: 2023-01-05 12:17:17 ConfID: 6693292 CauseID: 1557138677 OtherID: 1363324698 JT: Japanese Journal of Applied Physics MD: Kan,50,9s2,902,2011,Low-Temperature Sintering and Microwave Dielectric Properties of MgO Ceramic with LiF Addition DOI: 10.1143/JJAP.50.09NF02(Journal) (6693292-N) DOI: 10.7567/JJAP.50.09NF02(Journal) ========================================================== Created: 2023-01-05 12:17:17 ConfID: 6693293 CauseID: 1557138678 OtherID: 1363324677 JT: Japanese Journal of Applied Physics MD: Nakajima,50,9s2,914,2011,Performance of Piezoelectric Power Generation of Multilayered Poly(vinylidene fluoride) under High Mechanical Strain DOI: 10.1143/JJAP.50.09ND14(Journal) (6693293-N) DOI: 10.7567/JJAP.50.09ND14(Journal) ========================================================== Created: 2023-01-05 12:17:16 ConfID: 6693290 CauseID: 1557138675 OtherID: 1363324554 JT: Japanese Journal of Applied Physics MD: Lee,50,9r,95001,2011,Multilevel Charge Storage in a Multiple Alloy Nanodot Memory DOI: 10.1143/JJAP.50.095001(Journal) (6693290-N) DOI: 10.7567/JJAP.50.095001(Journal) ========================================================== Created: 2023-01-05 12:17:16 ConfID: 6693291 CauseID: 1557138676 OtherID: 1363324553 JT: Japanese Journal of Applied Physics MD: Kumai,50,9r,96001,2011,Excitation Temperature Measurement in Liquid Electrode Plasma DOI: 10.1143/JJAP.50.096001(Journal) (6693291-N) DOI: 10.7567/JJAP.50.096001(Journal) ========================================================== Created: 2023-01-05 12:17:14 ConfID: 6693288 CauseID: 1557138670 OtherID: 1363322835 JT: Japanese Journal of Applied Physics MD: Chung,50,10r,101001,2011,Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0.82In0.18N Grown on GaN DOI: 10.1143/JJAP.50.101001(Journal) (6693288-N) DOI: 10.7567/JJAP.50.101001(Journal) ========================================================== Created: 2023-01-05 12:17:15 ConfID: 6693289 CauseID: 1557138674 OtherID: 1363322886 JT: Japanese Journal of Applied Physics MD: Yogo,50,10r,106401,2011,Measurement of DNA Double-Strand Break Yield in Human Cancer Cells by High-Current, Short-Duration Bunches of Laser-Accelerated Protons DOI: 10.1143/JJAP.50.106401(Journal) (6693289-N) DOI: 10.7567/JJAP.50.106401(Journal) ========================================================== Created: 2023-01-05 12:17:24 ConfID: 6693302 CauseID: 1557138689 OtherID: 1363322896 JT: Japanese Journal of Applied Physics MD: Kaneta,50,10r,105803,2011,Theoretical Calculations for Magnetic Property of FeRh Inter-Metallic Compound with Site-Exchange Defects DOI: 10.1143/JJAP.50.105803(Journal) (6693302-N) DOI: 10.7567/JJAP.50.105803(Journal) ========================================================== Created: 2023-01-05 12:17:25 ConfID: 6693303 CauseID: 1557138691 OtherID: 1363324650 JT: Japanese Journal of Applied Physics MD: Wang,50,9s2,910,2011,Effects of A-Site Ions on the Phase Transition Temperatures and Dielectric Properties of (1-x)(Na0.5K0.5)NbO3–xAZrO3 Solid Solutions DOI: 10.1143/JJAP.50.09ND10(Journal) (6693303-N) DOI: 10.7567/JJAP.50.09ND10(Journal) ========================================================== Created: 2023-01-05 12:17:23 ConfID: 6693300 CauseID: 1557138687 OtherID: 1363322836 JT: Japanese Journal of Applied Physics MD: Tsujibayashi,50,10r,101601,2011,Molecular-Chain Formation Induced by Infrared-Laser Light Observed in L-Cysteine and Potassium Dihydrogenphosphate DOI: 10.1143/JJAP.50.101601(Journal) (6693300-N) DOI: 10.7567/JJAP.50.101601(Journal) ========================================================== Created: 2023-01-05 12:17:23 ConfID: 6693301 CauseID: 1557138688 OtherID: 1363322837 JT: Japanese Journal of Applied Physics MD: Terao,50,10r,102204,2011,Finite-Difference Frequency-Domain Method to Study Photonic Crystals with Dispersive Metamaterials DOI: 10.1143/JJAP.50.102204(Journal) (6693301-N) DOI: 10.7567/JJAP.50.102204(Journal) ========================================================== Created: 2023-01-05 12:17:22 ConfID: 6693298 CauseID: 1557138686 OtherID: 1363322868 JT: Japanese Journal of Applied Physics MD: Nakajima,50,10r,104303,2011,Numerical Analysis of Buffer-Trap Effects on Gate Lag in AlGaN/GaN High Electron Mobility Transistors DOI: 10.1143/JJAP.50.104303(Journal) (6693298-N) DOI: 10.7567/JJAP.50.104303(Journal) ========================================================== Created: 2023-01-05 12:17:22 ConfID: 6693299 CauseID: 1557138685 OtherID: 1363325456 JT: Japanese Journal of Applied Physics MD: Li,50,10s,1005,2011,Highly Reliable Radical SiO2 Films on Atomically Flat Silicon Surface Formed by Low Temperature Pure Ar Annealing DOI: 10.1143/JJAP.50.10PB05(Journal) (6693299-N) DOI: 10.7567/JJAP.50.10PB05(Journal) ========================================================== Created: 2023-01-05 12:17:20 ConfID: 6693296 CauseID: 1557138683 OtherID: 1363322885 JT: Japanese Journal of Applied Physics MD: Khan,50,10r,105603,2011,Non-Isothermal Crystallization in Amorphous GaxSe100-x Nanorods DOI: 10.1143/JJAP.50.105603(Journal) (6693296-N) DOI: 10.7567/JJAP.50.105603(Journal) ========================================================== Created: 2023-01-05 12:17:21 ConfID: 6693297 CauseID: 1557138684 OtherID: 1363324595 JT: Japanese Journal of Applied Physics MD: Ogata,50,9s1,902,2011,Perfect Tracking Control System with Prediction State Observer for Next-Generation Optical Disks DOI: 10.1143/JJAP.50.09MC02(Journal) (6693297-N) DOI: 10.7567/JJAP.50.09MC02(Journal) ========================================================== Created: 2023-01-05 12:17:29 ConfID: 6693310 CauseID: 1557138699 OtherID: 1363324632 JT: Japanese Journal of Applied Physics MD: Imamiya,50,9s2,901,2011,Multilayer Thin-Film Capacitor Fabricated by Radio-Frequency Magnetron Sputtering DOI: 10.1143/JJAP.50.09NA01(Journal) (6693310-N) DOI: 10.7567/JJAP.50.09NA01(Journal) ========================================================== Created: 2023-01-05 12:17:30 ConfID: 6693311 CauseID: 1557138700 OtherID: 1363322946 JT: Japanese Journal of Applied Physics MD: Yagi,50,11s,1101,2011,Effect of Oxygen Impurities on Thermal Diffusivity of AlN Thin Films Deposited by Reactive RF Magnetron Sputtering DOI: 10.1143/JJAP.50.11RB01(Journal) (6693311-N) DOI: 10.7567/JJAP.50.11RB01(Journal) ========================================================== Created: 2023-01-05 12:17:28 ConfID: 6693308 CauseID: 1557138697 OtherID: 1363322855 JT: Japanese Journal of Applied Physics MD: Sim,50,10r,102101,2011,The Light Extraction Efficiency of p-GaN Patterned InGaN/GaN Light-Emitting Diodes Fabricated by Size-Controllable Nanosphere Lithography DOI: 10.1143/JJAP.50.102101(Journal) (6693308-N) DOI: 10.7567/JJAP.50.102101(Journal) ========================================================== Created: 2023-01-05 12:17:29 ConfID: 6693309 CauseID: 1557138698 OtherID: 1363324604 JT: Japanese Journal of Applied Physics MD: Park,50,9s1,912,2011,k/(k+1) Tone-Controllable Codes for Holographic Data Storage DOI: 10.1143/JJAP.50.09ME12(Journal) (6693309-N) DOI: 10.7567/JJAP.50.09ME12(Journal) ========================================================== Created: 2023-01-05 12:17:26 ConfID: 6693306 CauseID: 1557138694 OtherID: 1363324578 JT: Japanese Journal of Applied Physics MD: Kwon,50,9r,97301,2011,Improvement of the Size-Selective Separation of Microbeads in a Curved Microchannel Using Particle Focusing DOI: 10.1143/JJAP.50.097301(Journal) (6693306-N) DOI: 10.7567/JJAP.50.097301(Journal) ========================================================== Created: 2023-01-05 12:17:28 ConfID: 6693307 CauseID: 1557138696 OtherID: 1363324559 JT: Japanese Journal of Applied Physics MD: Wang,50,9r,96503,2011,Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate DOI: 10.1143/JJAP.50.096503(Journal) (6693307-N) DOI: 10.7567/JJAP.50.096503(Journal) ========================================================== Created: 2023-01-05 12:17:25 ConfID: 6693304 CauseID: 1557138692 OtherID: 1363322897 JT: Japanese Journal of Applied Physics MD: Kozawa,50,10r,106502,2011,Theoretical Study of Exposure Latitude of Chemically Amplified Resists Used for Extreme Ultraviolet Lithography DOI: 10.1143/JJAP.50.106502(Journal) (6693304-N) DOI: 10.7567/JJAP.50.106502(Journal) ========================================================== Created: 2023-01-05 12:17:26 ConfID: 6693305 CauseID: 1557138693 OtherID: 1363324540 JT: Japanese Journal of Applied Physics MD: Kim,50,9r,96501,2011,Effect of Moisture on the Frequency-Dependent Current of an AlGaN/GaN High-Electron-Mobility Transistor DOI: 10.1143/JJAP.50.096501(Journal) (6693305-N) DOI: 10.7567/JJAP.50.096501(Journal) ========================================================== Created: 2023-01-05 12:16:52 ConfID: 6693254 CauseID: 1557138634 OtherID: 1363324549 JT: Japanese Journal of Applied Physics MD: Shiratori,50,9r,95101,2011,Tailoring the Morphology of Carbon Nanotube Assemblies Using Microgradients in the Catalyst Thickness DOI: 10.1143/JJAP.50.095101(Journal) (6693254-N) DOI: 10.7567/JJAP.50.095101(Journal) ========================================================== Created: 2023-01-05 12:16:52 ConfID: 6693255 CauseID: 1557138635 OtherID: 1363322875 JT: Japanese Journal of Applied Physics MD: Yin,50,10r,105201,2011,Possibility of Freely Achievable Multilevel Storage of Phase-Change Memory by Staircase-Shaped Pulse Programming DOI: 10.1143/JJAP.50.105201(Journal) (6693255-N) DOI: 10.7567/JJAP.50.105201(Journal) ========================================================== Created: 2023-01-05 12:16:50 ConfID: 6693252 CauseID: 1557138631 OtherID: 1363324485 JT: Japanese Journal of Applied Physics MD: Yamada,50,8s3,806,2011,Electronic Modification of C60 Monolayers via Metal Substrates DOI: 10.1143/JJAP.50.08LB06(Journal) (6693252-N) DOI: 10.7567/JJAP.50.08LB06(Journal) ========================================================== Created: 2023-01-05 12:16:51 ConfID: 6693253 CauseID: 1557138632 OtherID: 1363324656 JT: Japanese Journal of Applied Physics MD: Kobune,50,9s2,908,2011,Fabrication and Characterization of Binary Piezoelectric (Bi1/2Na1/2)TiO3–Ba(Cu1/3Nb2/3)O3 Solid Solutions DOI: 10.1143/JJAP.50.09ND08(Journal) (6693253-N) DOI: 10.7567/JJAP.50.09ND08(Journal) ========================================================== Created: 2023-01-05 12:16:49 ConfID: 6693250 CauseID: 1557138628 OtherID: 1363324521 JT: Japanese Journal of Applied Physics MD: Okamoto,50,9r,92201,2011,Design of Plasmonic Racetrack Resonators with a Trench Structure DOI: 10.1143/JJAP.50.092201(Journal) (6693250-N) DOI: 10.7567/JJAP.50.092201(Journal) ========================================================== Created: 2023-01-05 12:16:49 ConfID: 6693251 CauseID: 1557138629 OtherID: 1363324504 JT: Japanese Journal of Applied Physics MD: Boulon,50,9r,90207,2011,Absence of Host Cation Segregation in the (Gd,Y)3Al5O12 Mixed Garnet Optical Ceramics DOI: 10.1143/JJAP.50.090207(Journal) (6693251-N) DOI: 10.7567/JJAP.50.090207(Journal) ========================================================== Created: 2023-01-05 12:16:47 ConfID: 6693248 CauseID: 1557138625 OtherID: 1363324526 JT: Japanese Journal of Applied Physics MD: Lee,50,9r,91502,2011,Phase Evolution and Nucleus Growth Observation of Solid-State BaTiO3 Powder Prepared by High-Energy Bead Milling for Raw Material Mixing DOI: 10.1143/JJAP.50.091502(Journal) (6693248-N) DOI: 10.7567/JJAP.50.091502(Journal) ========================================================== Created: 2023-01-05 12:16:48 ConfID: 6693249 CauseID: 1557138627 OtherID: 1363324527 JT: Japanese Journal of Applied Physics MD: Arai,50,9r,92401,2011,Excited States of 3d3 Electrons in K2SiF6:Mn4+ Red Phosphor Studied by Photoluminescence Excitation Spectroscopy DOI: 10.1143/JJAP.50.092401(Journal) (6693249-N) DOI: 10.7567/JJAP.50.092401(Journal) ========================================================== Created: 2023-01-05 12:16:57 ConfID: 6693262 CauseID: 1557138643 OtherID: 1363322829 JT: Japanese Journal of Applied Physics MD: Chowdhury,50,10r,101002,2011,Use of Sub-nanometer Thick AlN to Arrest Diffusion of Ion-Implanted Mg into Regrown AlGaN/GaN Layers DOI: 10.1143/JJAP.50.101002(Journal) (6693262-N) DOI: 10.7567/JJAP.50.101002(Journal) ========================================================== Created: 2023-01-05 12:16:37 ConfID: 6693263 CauseID: 1557138608 OtherID: 1363324534 JT: Japanese Journal of Applied Physics MD: Shu,50,9r,92302,2011,Measuring the Junction Temperature of GaInP/GaInAs/Ge Multijunction Solar Cells Using Photoluminescence DOI: 10.1143/JJAP.50.092302(Journal) (6693263-N) DOI: 10.7567/JJAP.50.092302(Journal) ========================================================== Created: 2023-01-05 12:16:55 ConfID: 6693260 CauseID: 1557138640 OtherID: 1363324642 JT: Japanese Journal of Applied Physics MD: Nagata,50,9s2,905,2011,High-Power Piezoelectric Characteristics of Nontextured Bismuth Layer-Structured Ferroelectric Ceramics DOI: 10.1143/JJAP.50.09ND05(Journal) (6693260-N) DOI: 10.7567/JJAP.50.09ND05(Journal) ========================================================== Created: 2023-01-05 12:16:57 ConfID: 6693261 CauseID: 1557138642 OtherID: 1363322838 JT: Japanese Journal of Applied Physics MD: Katayama,50,10r,102701,2011,Real-Time Time–Frequency Imaging of Ultrashort Laser Pulses Using an Echelon Mirror DOI: 10.1143/JJAP.50.102701(Journal) (6693261-N) DOI: 10.7567/JJAP.50.102701(Journal) ========================================================== Created: 2023-01-05 12:16:54 ConfID: 6693258 CauseID: 1557138638 OtherID: 1363324561 JT: Japanese Journal of Applied Physics MD: Sun,50,9s1,903,2011,Optical Design and Analysis of a Laser Expander for a Blu-ray Pickup Head for Synchronous Detection of the Tilt Angle and Displacement on the Test Plane DOI: 10.1143/JJAP.50.09MA03(Journal) (6693258-N) DOI: 10.7567/JJAP.50.09MA03(Journal) ========================================================== Created: 2023-01-05 12:16:56 ConfID: 6693259 CauseID: 1557138641 OtherID: 1363322842 JT: Japanese Journal of Applied Physics MD: Xu,50,10r,102205,2011,Liquid Crystal Polarization Converters Using Circular-Buffed Polystyrene Film DOI: 10.1143/JJAP.50.102205(Journal) (6693259-N) DOI: 10.7567/JJAP.50.102205(Journal) ========================================================== Created: 2023-01-05 12:16:53 ConfID: 6693256 CauseID: 1557138636 OtherID: 1363324593 JT: Japanese Journal of Applied Physics MD: Jo,50,9s1,906,2011,Axial Vibration Characteristics Considering a Moving Pick-Up Unit for the Flexible Optical Disk System DOI: 10.1143/JJAP.50.09MC06(Journal) (6693256-N) DOI: 10.7567/JJAP.50.09MC06(Journal) ========================================================== Created: 2023-01-05 12:16:54 ConfID: 6693257 CauseID: 1557138637 OtherID: 1363324574 JT: Japanese Journal of Applied Physics MD: Yi,50,9r,98003,2011,Ion Beam Bombardment Effect on Contacts in Solution-Processed Single-Walled Carbon Nanotube Thin Film Transistor DOI: 10.1143/JJAP.50.098003(Journal) (6693257-N) DOI: 10.7567/JJAP.50.098003(Journal) ========================================================== Created: 2023-01-05 12:17:04 ConfID: 6693270 CauseID: 1557138651 OtherID: 1363324533 JT: Japanese Journal of Applied Physics MD: Kaneto,50,9r,91601,2011,Electrochemical Creeping and Actuation of Polypyrrole in Ionic Liquid DOI: 10.1143/JJAP.50.091601(Journal) (6693270-N) DOI: 10.7567/JJAP.50.091601(Journal) ========================================================== Created: 2023-01-05 12:17:00 ConfID: 6693271 CauseID: 1557138652 OtherID: 1363324556 JT: Japanese Journal of Applied Physics MD: Yan,50,9r,94302,2011,A Physics-Based Effective Mobility Model for Polycrystalline Silicon Thin Film Transistor Considering Discontinuous Energy Band at Grain Boundaries DOI: 10.1143/JJAP.50.094302(Journal) (6693271-N) DOI: 10.7567/JJAP.50.094302(Journal) ========================================================== Created: 2023-01-05 12:17:03 ConfID: 6693268 CauseID: 1557138649 OtherID: 1363324654 JT: Japanese Journal of Applied Physics MD: Shiraishi,50,9s2,911,2011,Growth of Epitaxial 100-Oriented KNbO3–NaNbO3 Solid Solution Films on (100)cSrRuO3∥(100)SrTiO3 by Hydrothermal Method and Their Characterization DOI: 10.1143/JJAP.50.09ND11(Journal) (6693268-N) DOI: 10.7567/JJAP.50.09ND11(Journal) ========================================================== Created: 2023-01-05 12:17:04 ConfID: 6693269 CauseID: 1557138650 OtherID: 1363322898 JT: Japanese Journal of Applied Physics MD: Kim,50,10r,105702,2011,Electrical Characteristics of Pt Schottky Contacts Fabricated on Amorphous Gallium Indium Zinc Oxides DOI: 10.1143/JJAP.50.105702(Journal) (6693269-N) DOI: 10.7567/JJAP.50.105702(Journal) ========================================================== Created: 2023-01-05 12:16:58 ConfID: 6693266 CauseID: 1557138645 OtherID: 1363324488 JT: Japanese Journal of Applied Physics MD: Anwar,50,8s3,810,2011,Single-Electron Charging in Phosphorus Donors in Silicon Observed by Low-Temperature Kelvin Probe Force Microscope DOI: 10.1143/JJAP.50.08LB10(Journal) (6693266-N) DOI: 10.7567/JJAP.50.08LB10(Journal) ========================================================== Created: 2023-01-05 12:17:00 ConfID: 6693267 CauseID: 1557138648 OtherID: 1363324506 JT: Japanese Journal of Applied Physics MD: Sano,50,9r,90205,2011,Impact of Site-Potential Asymmetry on Electron Transport in Graphene DOI: 10.1143/JJAP.50.090205(Journal) (6693267-N) DOI: 10.7567/JJAP.50.090205(Journal) ========================================================== Created: 2023-01-05 12:16:58 ConfID: 6693264 CauseID: 1557138644 OtherID: 1363322830 JT: Japanese Journal of Applied Physics MD: Fan,50,10r,100203,2011,Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors by Inserting an Ultrathin Teflon Carrier Injection Layer DOI: 10.1143/JJAP.50.100203(Journal) (6693264-N) DOI: 10.7567/JJAP.50.100203(Journal) ========================================================== Created: 2023-01-05 12:16:59 ConfID: 6693265 CauseID: 1557138646 OtherID: 1363324628 JT: Japanese Journal of Applied Physics MD: Kondoh,50,9s2,904,2011,Crystal Orientation Control of Bismuth Layer-Structured Dielectric Films Using Interface Layers of Perovskite-Type Oxides DOI: 10.1143/JJAP.50.09NA04(Journal) (6693265-N) DOI: 10.7567/JJAP.50.09NA04(Journal) ========================================================== Created: 2023-01-05 12:17:07 ConfID: 6693278 CauseID: 1557138659 OtherID: 1363324570 JT: Japanese Journal of Applied Physics MD: Michinobu,50,9s1,906,2011,Origin of Second-Order Nonlinear Optical Effects of Nonpoled Donor–Acceptor Chromophores on Surface DOI: 10.1143/JJAP.50.09MA06(Journal) (6693278-N) DOI: 10.7567/JJAP.50.09MA06(Journal) ========================================================== Created: 2023-01-05 12:17:07 ConfID: 6693279 CauseID: 1557138660 OtherID: 1363324669 JT: Japanese Journal of Applied Physics MD: Honda,50,9s2,901,2011,Theoretical Study on Interactions between Oxygen Vacancy and Doped Rare-Earth Elements in Barium Titanate DOI: 10.1143/JJAP.50.09NE01(Journal) (6693279-N) DOI: 10.7567/JJAP.50.09NE01(Journal) ========================================================== Created: 2023-01-05 12:17:05 ConfID: 6693276 CauseID: 1557138657 OtherID: 1363322864 JT: Japanese Journal of Applied Physics MD: Choi,50,10r,105502,2011,Effect of VI/II Gas Ratio on the Epitaxial Growth of ZnO Films by Metalorganic Chemical Vapor Deposition DOI: 10.1143/JJAP.50.105502(Journal) (6693276-N) DOI: 10.7567/JJAP.50.105502(Journal) ========================================================== Created: 2023-01-05 12:17:06 ConfID: 6693277 CauseID: 1557138658 OtherID: 1363324523 JT: Japanese Journal of Applied Physics MD: Begum,50,9r,92502,2011,Broadband Supercontinuum Spectrum Generated Highly Nonlinear Photonic Crystal Fiber Applicable to Medical and Optical Communication Systems DOI: 10.1143/JJAP.50.092502(Journal) (6693277-N) DOI: 10.7567/JJAP.50.092502(Journal) ========================================================== Created: 2023-01-05 12:17:02 ConfID: 6693274 CauseID: 1557138654 OtherID: 1363322826 JT: Japanese Journal of Applied Physics MD: Yamamoto,50,10r,100001,2011,Present Status and Future Prospects of Quantum Information Processing: With Special Focus on Optically Controlled Semiconductor Spins and Single-Photon Technologies DOI: 10.1143/JJAP.50.100001(Journal) (6693274-N) DOI: 10.7567/JJAP.50.100001(Journal) ========================================================== Created: 2023-01-05 12:17:03 ConfID: 6693275 CauseID: 1557138656 OtherID: 1363324555 JT: Japanese Journal of Applied Physics MD: Lee,50,9r,95801,2011,The Effect of Carrier Injection Stress on Boron-Doped Amorphous Silicon Suboxide Layers Investigated by X-ray Photoelectron Spectroscopy DOI: 10.1143/JJAP.50.095801(Journal) (6693275-N) DOI: 10.7567/JJAP.50.095801(Journal) ========================================================== Created: 2023-01-05 12:17:01 ConfID: 6693272 CauseID: 1557138653 OtherID: 1363324629 JT: Japanese Journal of Applied Physics MD: Yasuda,50,9s2,901,2011,Hierarchical Domain Structures in Relaxor 24Pb(In1/2Nb1/2)O3–46Pb(Mg1/3Nb2/3)O3–30PbTiO3 near a Morphotropic Phase Boundary Composition Grown by Bridgman Method DOI: 10.1143/JJAP.50.09NC01(Journal) (6693272-N) DOI: 10.7567/JJAP.50.09NC01(Journal) ========================================================== Created: 2023-01-05 12:17:02 ConfID: 6693273 CauseID: 1557138655 OtherID: 1363322840 JT: Japanese Journal of Applied Physics MD: Liu,50,10r,101502,2011,Anisotropic Colossal Dielectric Response of 0.93Pb(Fe1/2Nb1/2)O3–0.07PbTiO3 Single Crystals along [100] and [111] Directions DOI: 10.1143/JJAP.50.101502(Journal) (6693273-N) DOI: 10.7567/JJAP.50.101502(Journal) ========================================================== Created: 2023-01-05 12:28:54 ConfID: 6693478 CauseID: 1557140037 OtherID: 1363320228 JT: Japanese Journal of Applied Physics MD: Alquier,51,1s,108,2012,Recent Progresses in GaN Power Rectifier DOI: 10.1143/JJAP.51.01AG08(Journal) (6693478-N) DOI: 10.7567/JJAP.51.01AG08(Journal) ========================================================== Created: 2023-01-05 12:28:51 ConfID: 6693479 CauseID: 1557140041 OtherID: 1363320150 JT: Japanese Journal of Applied Physics MD: Aida,51,1r,12102,2012,Effect of Initial Bow of Sapphire Substrate on Substrate Curvature during InGaN Growth Stage of Light Emitting Diode Epitaxy DOI: 10.1143/JJAP.51.012102(Journal) (6693479-N) DOI: 10.7567/JJAP.51.012102(Journal) ========================================================== Created: 2023-01-05 12:28:46 ConfID: 6693476 CauseID: 1557140029 OtherID: 1363320145 JT: Japanese Journal of Applied Physics MD: Nakamura,51,1r,12601,2012,Thermal Diffusivity along X-Axis of Periodically Poled Mg-Doped Near-Stoichiometric LiTaO3 Device with Domain-Inverted Period of 8.0 µm DOI: 10.1143/JJAP.51.012601(Journal) (6693476-N) DOI: 10.7567/JJAP.51.012601(Journal) ========================================================== Created: 2023-01-05 12:28:47 ConfID: 6693477 CauseID: 1557140032 OtherID: 1363320137 JT: Japanese Journal of Applied Physics MD: Sakai,51,1r,10202,2012,A 128×96 Pixel, 50 µm Pixel Pitch Transparent Readout Circuit Using Amorphous In–Ga–Zn–O Thin-Film Transistor Array with Indium–Tin Oxide Electrodes for an Organic Image Sensor DOI: 10.1143/JJAP.51.010202(Journal) (6693477-N) DOI: 10.7567/JJAP.51.010202(Journal) ========================================================== Created: 2023-01-05 12:28:41 ConfID: 6693474 CauseID: 1557140015 OtherID: 1363320161 JT: Japanese Journal of Applied Physics MD: Nakazawa,51,1r,15603,2012,Characteristics of Silicon/Nitrogen-Incorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition DOI: 10.1143/JJAP.51.015603(Journal) (6693474-N) DOI: 10.7567/JJAP.51.015603(Journal) ========================================================== Created: 2023-01-05 12:28:49 ConfID: 6693475 CauseID: 1557140027 OtherID: 1363320141 JT: Japanese Journal of Applied Physics MD: Yamada,51,1r,12201,2012,Infrared Polarizer Fabrication by Imprinting on Sb–Ge–Sn–S Chalcogenide Glass DOI: 10.1143/JJAP.51.012201(Journal) (6693475-N) DOI: 10.7567/JJAP.51.012201(Journal) ========================================================== Created: 2023-01-05 12:28:36 ConfID: 6693472 CauseID: 1557140003 OtherID: 1363323037 JT: Japanese Journal of Applied Physics MD: Xianfeng,50,12r,126603,2011,Comparison of Interface Characterization between Ag(In,Ga)Se2 and Cu(In,Ga)Se2 Solar Cells by High-Angle-Annular Dark-Field Scanning Transmission Electron Microscopy DOI: 10.1143/JJAP.50.126603(Journal) (6693472-N) DOI: 10.7567/JJAP.50.126603(Journal) ========================================================== Created: 2023-01-05 12:28:36 ConfID: 6693473 CauseID: 1557140004 OtherID: 1363323011 JT: Japanese Journal of Applied Physics MD: Inomata,50,12r,125101,2011,Investigation of the Resistance Dependence on Temperature of Single Carbon Nanotube in Different Environments DOI: 10.1143/JJAP.50.125101(Journal) (6693473-N) DOI: 10.7567/JJAP.50.125101(Journal) ========================================================== Created: 2023-01-05 12:29:04 ConfID: 6693486 CauseID: 1557140066 OtherID: 1363323046 JT: Japanese Journal of Applied Physics MD: Omura,50,12r,125802,2011,Cation Extraction Process in Bilayer Cyanide Film as Investigated by Depth-Resolved X-ray Absorption Spectroscopy DOI: 10.1143/JJAP.50.125802(Journal) (6693486-N) DOI: 10.7567/JJAP.50.125802(Journal) ========================================================== Created: 2023-01-05 12:29:09 ConfID: 6693487 CauseID: 1557140072 OtherID: 1363320401 JT: Japanese Journal of Applied Physics MD: Chen,51,2s,212,2012,Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal–Oxide–Semiconductor Transistors DOI: 10.1143/JJAP.51.02BC12(Journal) (6693487-N) DOI: 10.7567/JJAP.51.02BC12(Journal) ========================================================== Created: 2023-01-05 12:28:58 ConfID: 6693484 CauseID: 1557140052 OtherID: 1363320193 JT: Japanese Journal of Applied Physics MD: Zhang,51,1s,104,2012,Numerical Simulation of Laser Induced Weakly Ionized Helium Plasma Process by Lattice Boltzmann Method DOI: 10.1143/JJAP.51.01AA04(Journal) (6693484-N) DOI: 10.7567/JJAP.51.01AA04(Journal) ========================================================== Created: 2023-01-05 12:28:48 ConfID: 6693485 CauseID: 1557140024 OtherID: 1363320120 JT: Japanese Journal of Applied Physics MD: Tohyama,51,1r,10004,2012,Recent Progress in Physics of High-Temperature Superconductors DOI: 10.1143/JJAP.51.010004(Journal) (6693485-N) DOI: 10.7567/JJAP.51.010004(Journal) ========================================================== Created: 2023-01-05 12:28:55 ConfID: 6693482 CauseID: 1557140046 OtherID: 1363320152 JT: Japanese Journal of Applied Physics MD: Xia,51,1r,11601,2012,Effect of Chemical Modifications on the Electronic Transport Properties of the Optical Molecular Switch DOI: 10.1143/JJAP.51.011601(Journal) (6693482-N) DOI: 10.7567/JJAP.51.011601(Journal) ========================================================== Created: 2023-01-05 12:28:57 ConfID: 6693483 CauseID: 1557140049 OtherID: 1363320135 JT: Japanese Journal of Applied Physics MD: Chiang,51,1r,11101,2012,Characterization of Hf1-xZrxO2 Gate Dielectrics with 0≤x≤1 Prepared by Atomic Layer Deposition for Metal Oxide Semiconductor Field Effect Transistor Applications DOI: 10.1143/JJAP.51.011101(Journal) (6693483-N) DOI: 10.7567/JJAP.51.011101(Journal) ========================================================== Created: 2023-01-05 12:28:51 ConfID: 6693480 CauseID: 1557140040 OtherID: 1363320149 JT: Japanese Journal of Applied Physics MD: Teranishi,51,1r,11102,2012,Complex Conductivity Using Wideband Spectroscopy for Yttria/Ytterbia-Stabilized Zirconia Ceramics DOI: 10.1143/JJAP.51.011102(Journal) (6693480-N) DOI: 10.7567/JJAP.51.011102(Journal) ========================================================== Created: 2023-01-05 12:28:52 ConfID: 6693481 CauseID: 1557140043 OtherID: 1363320151 JT: Japanese Journal of Applied Physics MD: Chenchen,51,1r,13101,2012,Size Dependence Effect in MgO-Based CoFeB Tunnel Junctions with Perpendicular Magnetic Anisotropy DOI: 10.1143/JJAP.51.013101(Journal) (6693481-N) DOI: 10.7567/JJAP.51.013101(Journal) ========================================================== Created: 2023-01-05 12:29:18 ConfID: 6693494 CauseID: 1557140101 OtherID: 1363320115 JT: Japanese Journal of Applied Physics MD: Kumakura,51,1r,10003,2012,Development and Prospects for the Future of Superconducting Wires DOI: 10.1143/JJAP.51.010003(Journal) (6693494-N) DOI: 10.7567/JJAP.51.010003(Journal) ========================================================== Created: 2023-01-05 12:29:18 ConfID: 6693495 CauseID: 1557140102 OtherID: 1363323042 JT: Japanese Journal of Applied Physics MD: Okada,50,12r,126502,2011,Nanoimprint Molds with Circumferentially Aligned Patterns Fabricated by Liftoff Process DOI: 10.1143/JJAP.50.126502(Journal) (6693495-N) DOI: 10.7567/JJAP.50.126502(Journal) ========================================================== Created: 2023-01-05 12:29:14 ConfID: 6693492 CauseID: 1557140088 OtherID: 1363320225 JT: Japanese Journal of Applied Physics MD: Sawaguchi,51,1s,103,2012,Growth Characteristics of Carbon Nanotubes on Oxidized Catalyst under Low-Pressure Condition DOI: 10.1143/JJAP.51.01AH03(Journal) (6693492-N) DOI: 10.7567/JJAP.51.01AH03(Journal) ========================================================== Created: 2023-01-05 12:29:12 ConfID: 6693493 CauseID: 1557140093 OtherID: 1363320166 JT: Japanese Journal of Applied Physics MD: Mizusaki,51,1r,14102,2012,Analysis of Ion Behavior Affecting Voltage Holding Property of Liquid Crystal Displays DOI: 10.1143/JJAP.51.014102(Journal) (6693493-N) DOI: 10.7567/JJAP.51.014102(Journal) ========================================================== Created: 2023-01-05 12:29:04 ConfID: 6693490 CauseID: 1557140065 OtherID: 1363320176 JT: Japanese Journal of Applied Physics MD: Okada,51,1r,16502,2012,High-Density Electron-Beam Recording of Circumferentially Aligned Dots by Using Substrates with Low Atomic Numbers DOI: 10.1143/JJAP.51.016502(Journal) (6693490-N) DOI: 10.7567/JJAP.51.016502(Journal) ========================================================== Created: 2023-01-05 12:29:13 ConfID: 6693491 CauseID: 1557140086 OtherID: 1363323032 JT: Japanese Journal of Applied Physics MD: Nagaoka,50,12r,128001,2011,Growth of Cu2ZnSnS4 Single Crystal by Traveling Heater Method DOI: 10.1143/JJAP.50.128001(Journal) (6693491-N) DOI: 10.7567/JJAP.50.128001(Journal) ========================================================== Created: 2023-01-05 12:29:05 ConfID: 6693488 CauseID: 1557140073 OtherID: 1363320204 JT: Japanese Journal of Applied Physics MD: Rungsirathana,51,1s,109,2012,Enhanced Flyer Acceleration by Varying the Ion Beam–Plasma Interaction Field DOI: 10.1143/JJAP.51.01AC09(Journal) (6693488-N) DOI: 10.7567/JJAP.51.01AC09(Journal) ========================================================== Created: 2023-01-05 12:29:06 ConfID: 6693489 CauseID: 1557140075 OtherID: 1363320162 JT: Japanese Journal of Applied Physics MD: Lu,51,1r,15702,2012,Scanning Tunneling Spectroscopy Observation of Electronic Resonances Originating from 1 ×1 Potential on the Dense Pb Overlayer on Si(111) DOI: 10.1143/JJAP.51.015702(Journal) (6693489-N) DOI: 10.7567/JJAP.51.015702(Journal) ========================================================== Created: 2023-01-05 12:29:28 ConfID: 6693502 CauseID: 1557140140 OtherID: 1363320205 JT: Japanese Journal of Applied Physics MD: Satoh,51,1s,107,2012,Electrical Properties of Cr–N Films Deposited by Sputtering: Application to Cryogenic Temperature Sensors DOI: 10.1143/JJAP.51.01AC07(Journal) (6693502-N) DOI: 10.7567/JJAP.51.01AC07(Journal) ========================================================== Created: 2023-01-05 12:29:31 ConfID: 6693503 CauseID: 1557140149 OtherID: 1363323041 JT: Japanese Journal of Applied Physics MD: Jung,50,12r,127002,2011,Nanopore Protein Biosensor Using Diffusive Flow DOI: 10.1143/JJAP.50.127002(Journal) (6693503-N) DOI: 10.7567/JJAP.50.127002(Journal) ========================================================== Created: 2023-01-05 12:29:29 ConfID: 6693500 CauseID: 1557140133 OtherID: 1363320140 JT: Japanese Journal of Applied Physics MD: Deng,51,1r,11501,2012,Effects of Polarization on Mechanical Properties of Lead Zirconate Titanate Ceramics Evaluated by Modified Small Punch Tests DOI: 10.1143/JJAP.51.011501(Journal) (6693500-N) DOI: 10.7567/JJAP.51.011501(Journal) ========================================================== Created: 2023-01-05 12:29:27 ConfID: 6693501 CauseID: 1557140139 OtherID: 1363320232 JT: Japanese Journal of Applied Physics MD: Iokawa,51,1s,104,2012,Direct Growth of Carbon Nanotubes on ZnO(0001̄) Substrate Surface using Alcohol Gas Source Method in High Vacuum DOI: 10.1143/JJAP.51.01AH04(Journal) (6693501-N) DOI: 10.7567/JJAP.51.01AH04(Journal) ========================================================== Created: 2023-01-05 12:29:22 ConfID: 6693498 CauseID: 1557140123 OtherID: 1363320146 JT: Japanese Journal of Applied Physics MD: Yim,51,1r,11401,2012,Effects of Metal Electrode on the Electrical Performance of Amorphous In–Ga–Zn–O Thin Film Transistor DOI: 10.1143/JJAP.51.011401(Journal) (6693498-N) DOI: 10.7567/JJAP.51.011401(Journal) ========================================================== Created: 2023-01-05 12:29:23 ConfID: 6693499 CauseID: 1557140124 OtherID: 1363320180 JT: Japanese Journal of Applied Physics MD: Aida,51,1r,16504,2012,Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing DOI: 10.1143/JJAP.51.016504(Journal) (6693499-N) DOI: 10.7567/JJAP.51.016504(Journal) ========================================================== Created: 2023-01-05 12:29:19 ConfID: 6693496 CauseID: 1557140104 OtherID: 1363320144 JT: Japanese Journal of Applied Physics MD: Zhang,51,1r,11502,2012,Optical and Electric Properties of Bi0.5Na0.5TiO3-Based Thin Films Grown on Indium–Tin-Oxide-Coated Glass Substrates DOI: 10.1143/JJAP.51.011502(Journal) (6693496-N) DOI: 10.7567/JJAP.51.011502(Journal) ========================================================== Created: 2023-01-05 12:29:20 ConfID: 6693497 CauseID: 1557140116 OtherID: 1363320190 JT: Japanese Journal of Applied Physics MD: Kaneko,51,1s,102,2012,Epitaxial Indium Tin Oxide Film Deposited on Sapphire Substrate by Solid-Source Electron Cyclotron Resonance Plasma DOI: 10.1143/JJAP.51.01AC02(Journal) (6693497-N) DOI: 10.7567/JJAP.51.01AC02(Journal) ========================================================== Created: 2023-01-05 12:27:52 ConfID: 6693446 CauseID: 1557139894 OtherID: 1363323034 JT: Japanese Journal of Applied Physics MD: Masuda,50,12r,125503,2011,Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy DOI: 10.1143/JJAP.50.125503(Journal) (6693446-N) DOI: 10.7567/JJAP.50.125503(Journal) ========================================================== Created: 2023-01-05 12:27:53 ConfID: 6693447 CauseID: 1557139895 OtherID: 1363323027 JT: Japanese Journal of Applied Physics MD: Seo,50,12r,125103,2011,Enhanced Light Output Power of GaN Light-Emitting Diodes with Graphene Film as a Transparent Conducting Electrode DOI: 10.1143/JJAP.50.125103(Journal) (6693447-N) DOI: 10.7567/JJAP.50.125103(Journal) ========================================================== Created: 2023-01-05 12:27:11 ConfID: 6693444 CauseID: 1557139802 OtherID: 1363320107 JT: Japanese Journal of Applied Physics MD: Kitazawa,51,1r,10001,2012,Superconductivity: 100th Anniversary of Its Discovery and Its Future DOI: 10.1143/JJAP.51.010001(Journal) (6693444-N) DOI: 10.7567/JJAP.51.010001(Journal) ========================================================== Created: 2023-01-05 12:27:42 ConfID: 6693445 CauseID: 1557139873 OtherID: 1363323044 JT: Japanese Journal of Applied Physics MD: Takada,50,12r,126201,2011,Control of Plasma and Cavitation Bubble in Liquid-Phase Laser Ablation Using Supersonic Waves DOI: 10.1143/JJAP.50.126201(Journal) (6693445-N) DOI: 10.7567/JJAP.50.126201(Journal) ========================================================== Created: 2023-01-05 12:28:13 ConfID: 6693454 CauseID: 1557139942 OtherID: 1363320118 JT: Japanese Journal of Applied Physics MD: Nabeshima,51,1r,10102,2012,Effect of Co Impurities on Superconductivity of FeSe0.4Te0.6 Single Crystals DOI: 10.1143/JJAP.51.010102(Journal) (6693454-N) DOI: 10.7567/JJAP.51.010102(Journal) ========================================================== Created: 2023-01-05 12:28:13 ConfID: 6693455 CauseID: 1557139943 OtherID: 1363320127 JT: Japanese Journal of Applied Physics MD: Matsushita,51,1r,10109,2012,Critical State Theory in Superconductors DOI: 10.1143/JJAP.51.010109(Journal) (6693455-N) DOI: 10.7567/JJAP.51.010109(Journal) ========================================================== Created: 2023-01-05 12:28:10 ConfID: 6693452 CauseID: 1557139936 OtherID: 1363323028 JT: Japanese Journal of Applied Physics MD: Fujita,50,12r,125502,2011,Growth of CuGaSe2 Layers on Closely Lattice-Matched GaAs Substrates by Migration-Enhanced Epitaxy DOI: 10.1143/JJAP.50.125502(Journal) (6693452-N) DOI: 10.7567/JJAP.50.125502(Journal) ========================================================== Created: 2023-01-05 12:28:04 ConfID: 6693453 CauseID: 1557139920 OtherID: 1363323023 JT: Japanese Journal of Applied Physics MD: Cai,50,12r,124203,2011,Mobility Improvement in C60-Based Field-Effect Transistors Using LiF/Ag Source/Drain Electrodes DOI: 10.1143/JJAP.50.124203(Journal) (6693453-N) DOI: 10.7567/JJAP.50.124203(Journal) ========================================================== Created: 2023-01-05 12:27:56 ConfID: 6693450 CauseID: 1557139902 OtherID: 1363320165 JT: Japanese Journal of Applied Physics MD: Ahn,51,1r,15601,2012,Origin of Device Performance Degradation in InGaZnO Thin-Film Transistors after Crystallization DOI: 10.1143/JJAP.51.015601(Journal) (6693450-N) DOI: 10.7567/JJAP.51.015601(Journal) ========================================================== Created: 2023-01-05 12:28:07 ConfID: 6693451 CauseID: 1557139932 OtherID: 1363323040 JT: Japanese Journal of Applied Physics MD: Kim,50,12r,125602,2011,Effects of Deposition Time Duration on Thermal Diffusivity of Hydrogenated Amorphous Carbon Films DOI: 10.1143/JJAP.50.125602(Journal) (6693451-N) DOI: 10.7567/JJAP.50.125602(Journal) ========================================================== Created: 2023-01-05 12:28:01 ConfID: 6693449 CauseID: 1557139914 OtherID: 1363323022 JT: Japanese Journal of Applied Physics MD: Kang,50,12r,124301,2011,Radio Frequency Performance of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors DOI: 10.1143/JJAP.50.124301(Journal) (6693449-N) DOI: 10.7567/JJAP.50.124301(Journal) ========================================================== Created: 2023-01-05 12:28:25 ConfID: 6693462 CauseID: 1557139975 OtherID: 1363320106 JT: Japanese Journal of Applied Physics MD: Ueda,51,1r,10103,2012,Molecular Beam Epitaxy Growth of Superconducting Ba1-xKxFe2As2 and SmFeAs(O,F) Films DOI: 10.1143/JJAP.51.010103(Journal) (6693462-N) DOI: 10.7567/JJAP.51.010103(Journal) ========================================================== Created: 2023-01-05 12:28:26 ConfID: 6693463 CauseID: 1557139976 OtherID: 1363323030 JT: Japanese Journal of Applied Physics MD: Seki,50,12r,125804,2011,Lehmann Force Acting on a Micro-Particle in Smectic C* Free-Standing Films Subjected to Methanol Vapor Transport DOI: 10.1143/JJAP.50.125804(Journal) (6693463-N) DOI: 10.7567/JJAP.50.125804(Journal) ========================================================== Created: 2023-01-05 12:28:23 ConfID: 6693460 CauseID: 1557139966 OtherID: 1363320116 JT: Japanese Journal of Applied Physics MD: Hanawa,51,1r,10104,2012,Empirical Selection Rule of Substrate Materials for Iron Chalcogenide Superconducting Thin Films DOI: 10.1143/JJAP.51.010104(Journal) (6693460-N) DOI: 10.7567/JJAP.51.010104(Journal) ========================================================== Created: 2023-01-05 12:28:19 ConfID: 6693461 CauseID: 1557139957 OtherID: 1363323035 JT: Japanese Journal of Applied Physics MD: Kozawa,50,12r,126501,2011,Analysis of Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Fullerene Resist DOI: 10.1143/JJAP.50.126501(Journal) (6693461-N) DOI: 10.7567/JJAP.50.126501(Journal) ========================================================== Created: 2023-01-05 12:28:22 ConfID: 6693458 CauseID: 1557139965 OtherID: 1363323033 JT: Japanese Journal of Applied Physics MD: Ikeda,50,12r,125601,2011,Theoretical Study of Gallium Nitride Crystal Growth Reaction Mechanism DOI: 10.1143/JJAP.50.125601(Journal) (6693458-N) DOI: 10.7567/JJAP.50.125601(Journal) ========================================================== Created: 2023-01-05 12:28:21 ConfID: 6693459 CauseID: 1557139964 OtherID: 1363323008 JT: Japanese Journal of Applied Physics MD: Orouji,50,12r,124303,2011,A New Rounded Edge Fin Field Effect Transistor for Improving Self-Heating Effects DOI: 10.1143/JJAP.50.124303(Journal) (6693459-N) DOI: 10.7567/JJAP.50.124303(Journal) ========================================================== Created: 2023-01-05 12:28:16 ConfID: 6693456 CauseID: 1557139951 OtherID: 1363320158 JT: Japanese Journal of Applied Physics MD: He,51,1r,15501,2012,Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal–Organic Vapor-Phase Epitaxy DOI: 10.1143/JJAP.51.015501(Journal) (6693456-N) DOI: 10.7567/JJAP.51.015501(Journal) ========================================================== Created: 2023-01-05 12:28:10 ConfID: 6693457 CauseID: 1557139938 OtherID: 1363323047 JT: Japanese Journal of Applied Physics MD: Kishimura,50,12r,125805,2011,Characterization of Shock-Recovered BaSi2 Powder DOI: 10.1143/JJAP.50.125805(Journal) (6693457-N) DOI: 10.7567/JJAP.50.125805(Journal) ========================================================== Created: 2023-01-05 12:28:31 ConfID: 6693470 CauseID: 1557139993 OtherID: 1363323036 JT: Japanese Journal of Applied Physics MD: Zou,50,12r,125806,2011,Characterization and Mechanical Properties of Ti–Al–Cr–N Nanocomposite Coatings Deposited by Closed Field Unbalanced Middle Frequency Magnetron Sputtering DOI: 10.1143/JJAP.50.125806(Journal) (6693470-N) DOI: 10.7567/JJAP.50.125806(Journal) ========================================================== Created: 2023-01-05 12:28:32 ConfID: 6693471 CauseID: 1557139995 OtherID: 1363320164 JT: Japanese Journal of Applied Physics MD: Naritsuka,51,1r,15602,2012,X-ray Photoemission Spectroscopy Study of Low-Temperature Nitridation of GaAs(001) Surface Using RF Radical Source DOI: 10.1143/JJAP.51.015602(Journal) (6693471-N) DOI: 10.7567/JJAP.51.015602(Journal) ========================================================== Created: 2023-01-05 12:28:30 ConfID: 6693468 CauseID: 1557139991 OtherID: 1363323043 JT: Japanese Journal of Applied Physics MD: Son,50,12r,127001,2011,Numerical Analysis of Magnetic Field Distribution of Magnetic Micro-barcodes for Suspension Assay Technology DOI: 10.1143/JJAP.50.127001(Journal) (6693468-N) DOI: 10.7567/JJAP.50.127001(Journal) ========================================================== Created: 2023-01-05 12:28:30 ConfID: 6693469 CauseID: 1557139992 OtherID: 1363323009 JT: Japanese Journal of Applied Physics MD: An,50,12r,124201,2011,Substrate-Bias Assisted Hot Electron Injection Method for High-Speed, Low-Voltage, and Multi-Bit Flash Memories DOI: 10.1143/JJAP.50.124201(Journal) (6693469-N) DOI: 10.7567/JJAP.50.124201(Journal) ========================================================== Created: 2023-01-05 12:28:28 ConfID: 6693466 CauseID: 1557139980 OtherID: 1363320148 JT: Japanese Journal of Applied Physics MD: Palei,51,1r,11503,2012,Role of Sintering Temperature on the Phase Stability and Electrical Properties of 0.94(K0.5Na0.5NbO3)–0.06(LiSbO3) Ceramics DOI: 10.1143/JJAP.51.011503(Journal) (6693466-N) DOI: 10.7567/JJAP.51.011503(Journal) ========================================================== Created: 2023-01-05 12:28:34 ConfID: 6693467 CauseID: 1557139989 OtherID: 1363320130 JT: Japanese Journal of Applied Physics MD: Naitoh,51,1r,10201,2012,Ion-Beam Irradiation Effect on the Growth of Carbon Nanotubes in the SiC Surface Decomposition Method DOI: 10.1143/JJAP.51.010201(Journal) (6693467-N) DOI: 10.7567/JJAP.51.010201(Journal) ========================================================== Created: 2023-01-05 12:28:27 ConfID: 6693464 CauseID: 1557139977 OtherID: 1363323017 JT: Japanese Journal of Applied Physics MD: Jang,50,12r,124202,2011,Dependence of Electrical Characteristics on the Depth of the Recess Region in the Scaled Tantalum Nitride–Aluminum Oxide–Silicon Nitride–Silicon Oxide–Silicon Flash Memory Devices DOI: 10.1143/JJAP.50.124202(Journal) (6693464-N) DOI: 10.7567/JJAP.50.124202(Journal) ========================================================== Created: 2023-01-05 12:28:27 ConfID: 6693465 CauseID: 1557139978 OtherID: 1363323058 JT: Japanese Journal of Applied Physics MD: Nishioka,50,12r,128003,2011,Water-Repellent Silicon Surface with Nanostructure Formed by Catalysis of Single Nanosized Silver Particle DOI: 10.1143/JJAP.50.128003(Journal) (6693465-N) DOI: 10.7567/JJAP.50.128003(Journal) ========================================================== Created: 2023-01-05 12:18:57 ConfID: 6693414 CauseID: 1557138845 OtherID: 1363322876 JT: Japanese Journal of Applied Physics MD: Hosoya,50,10r,105101,2011,Theoretical Simulation of Deformed Carbon Nanotubes with Adsorbed Metal Atoms: Enhanced Reactivity by Deformation DOI: 10.1143/JJAP.50.105101(Journal) (6693414-N) DOI: 10.7567/JJAP.50.105101(Journal) ========================================================== Created: 2023-01-05 12:18:58 ConfID: 6693415 CauseID: 1557138846 OtherID: 1363322892 JT: Japanese Journal of Applied Physics MD: Cho,50,10r,106201,2011,Electrical Explosion of Silicon Rod in Distilled Water DOI: 10.1143/JJAP.50.106201(Journal) (6693415-N) DOI: 10.7567/JJAP.50.106201(Journal) ========================================================== Created: 2023-01-05 12:18:55 ConfID: 6693412 CauseID: 1557138843 OtherID: 1363322899 JT: Japanese Journal of Applied Physics MD: Ding,50,10r,105701,2011,Density Functional Theory Study of Cu Adhesion on Rh, Ir, Pd, Ta, Mo, Ru, Co, and Os Surfaces DOI: 10.1143/JJAP.50.105701(Journal) (6693412-N) DOI: 10.7567/JJAP.50.105701(Journal) ========================================================== Created: 2023-01-05 12:18:56 ConfID: 6693413 CauseID: 1557138844 OtherID: 1363325449 JT: Japanese Journal of Applied Physics MD: Matsuki,50,10s,1002,2011,Impact of Nitrogen Incorporation on Low-Frequency Noise of Polycrystalline Silicon/TiN/HfO2/SiO2 Gate-Stack Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.50.10PB02(Journal) (6693413-N) DOI: 10.7567/JJAP.50.10PB02(Journal) ========================================================== Created: 2023-01-05 12:18:52 ConfID: 6693410 CauseID: 1557138837 OtherID: 1363322895 JT: Japanese Journal of Applied Physics MD: Hara,50,10r,106001,2011,Development of Neutral Beam Source Using Electron Beam Excited Plasma DOI: 10.1143/JJAP.50.106001(Journal) (6693410-N) DOI: 10.7567/JJAP.50.106001(Journal) ========================================================== Created: 2023-01-05 12:18:54 ConfID: 6693411 CauseID: 1557138838 OtherID: 1363325466 JT: Japanese Journal of Applied Physics MD: Ohta,50,10s,1002,2011,Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium–Yttrium Mixed Oxide DOI: 10.1143/JJAP.50.10PH02(Journal) (6693411-N) DOI: 10.7567/JJAP.50.10PH02(Journal) ========================================================== Created: 2023-01-05 12:18:49 ConfID: 6693408 CauseID: 1557138831 OtherID: 1363325441 JT: Japanese Journal of Applied Physics MD: Kouda,50,10s,1004,2011,Rare Earth Oxide Capping Effect on La2O3 Gate Dielectrics for Equivalent Oxide Thickness Scaling toward 0.5 nm DOI: 10.1143/JJAP.50.10PA04(Journal) (6693408-N) DOI: 10.7567/JJAP.50.10PA04(Journal) ========================================================== Created: 2023-01-05 12:18:51 ConfID: 6693409 CauseID: 1557138836 OtherID: 1363322878 JT: Japanese Journal of Applied Physics MD: Yang,50,10r,105601,2011,Kink-Pair Mechanism in <001> SrTiO3 Single Crystal Compression-Deformed at Room Temperature DOI: 10.1143/JJAP.50.105601(Journal) (6693409-N) DOI: 10.7567/JJAP.50.105601(Journal) ========================================================== Created: 2023-01-05 12:19:02 ConfID: 6693422 CauseID: 1557138856 OtherID: 1363325455 JT: Japanese Journal of Applied Physics MD: Wang,50,10s,1004,2011,Kinetic Effects of O-Vacancy Generated by GeO2/Ge Interfacial Reaction DOI: 10.1143/JJAP.50.10PE04(Journal) (6693422-N) DOI: 10.7567/JJAP.50.10PE04(Journal) ========================================================== Created: 2023-01-05 12:19:05 ConfID: 6693423 CauseID: 1557138861 OtherID: 1363325445 JT: Japanese Journal of Applied Physics MD: Hosoi,50,10s,1003,2011,Synchrotron Radiation Photoemission Study of Ge3N4/Ge Structures Formed by Plasma Nitridation DOI: 10.1143/JJAP.50.10PE03(Journal) (6693423-N) DOI: 10.7567/JJAP.50.10PE03(Journal) ========================================================== Created: 2023-01-05 12:19:01 ConfID: 6693420 CauseID: 1557138854 OtherID: 1363325469 JT: Japanese Journal of Applied Physics MD: Liu,50,10s,1005,2011,Ultralow Dielectric Property of Electrospun Polylactide–Polyglycolide Nanofibrous Membranes DOI: 10.1143/JJAP.50.10PG05(Journal) (6693420-N) DOI: 10.7567/JJAP.50.10PG05(Journal) ========================================================== Created: 2023-01-05 12:19:05 ConfID: 6693421 CauseID: 1557138860 OtherID: 1363322906 JT: Japanese Journal of Applied Physics MD: Soliman,50,10r,108003,2011,Effect of Water Pressure on Size of Nanoparticles in Liquid-Phase Laser Ablation DOI: 10.1143/JJAP.50.108003(Journal) (6693421-N) DOI: 10.7567/JJAP.50.108003(Journal) ========================================================== Created: 2023-01-05 12:19:00 ConfID: 6693418 CauseID: 1557138853 OtherID: 1363325477 JT: Japanese Journal of Applied Physics MD: Wang,50,10s,1004,2011,pH Sensing Characterization of Programmable Sm2O3/Si3N4/SiO2/Si Electrolyte–Insulator–Semiconductor Sensor with Rapid Thermal Annealing DOI: 10.1143/JJAP.50.10PG04(Journal) (6693418-N) DOI: 10.7567/JJAP.50.10PG04(Journal) ========================================================== Created: 2023-01-05 12:19:02 ConfID: 6693419 CauseID: 1557138855 OtherID: 1363322900 JT: Japanese Journal of Applied Physics MD: Miyashita,50,10r,106503,2011,Fabrication of Einzel Lens Array with One-Mask Reactive Ion Etching Process for Electron Micro-Optics DOI: 10.1143/JJAP.50.106503(Journal) (6693419-N) DOI: 10.7567/JJAP.50.106503(Journal) ========================================================== Created: 2023-01-05 12:18:59 ConfID: 6693416 CauseID: 1557138847 OtherID: 1363325440 JT: Japanese Journal of Applied Physics MD: Yamamoto,50,10s,1002,2011,Impact of Thermally Induced Structural Changes on the Electrical Properties of TiN/HfLaSiO Gate Stacks DOI: 10.1143/JJAP.50.10PA02(Journal) (6693416-N) DOI: 10.7567/JJAP.50.10PA02(Journal) ========================================================== Created: 2023-01-05 12:19:00 ConfID: 6693417 CauseID: 1557138852 OtherID: 1363325461 JT: Japanese Journal of Applied Physics MD: Kato,50,10s,1002,2011,Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure Using Radical Nitridation Technique DOI: 10.1143/JJAP.50.10PE02(Journal) (6693417-N) DOI: 10.7567/JJAP.50.10PE02(Journal) ========================================================== Created: 2023-01-05 12:19:17 ConfID: 6693430 CauseID: 1557138881 OtherID: 1363322957 JT: Japanese Journal of Applied Physics MD: Sugie,50,11s,1104,2011,Noncontact Laser Modulation Calorimetry for High-Purity Liquid Iron DOI: 10.1143/JJAP.50.11RD04(Journal) (6693430-N) DOI: 10.7567/JJAP.50.11RD04(Journal) ========================================================== Created: 2023-01-05 12:19:21 ConfID: 6693431 CauseID: 1557138887 OtherID: 1363322985 JT: Japanese Journal of Applied Physics MD: Zolotoukhina,50,11s,1101,2011,Molecular Dynamics Simulation of Coherent Phonon Generation and Its Spectral Characterization in a Nanoribbon upon Localized Pulse Heating DOI: 10.1143/JJAP.50.11RH01(Journal) (6693431-N) DOI: 10.7567/JJAP.50.11RH01(Journal) ========================================================== Created: 2023-01-05 12:19:13 ConfID: 6693428 CauseID: 1557138873 OtherID: 1363322953 JT: Japanese Journal of Applied Physics MD: Ishikawa,50,11s,1103,2011,Thermophysical Property Measurements of High Temperature Melts Using an Electrostatic Levitation Method DOI: 10.1143/JJAP.50.11RD03(Journal) (6693428-N) DOI: 10.7567/JJAP.50.11RD03(Journal) ========================================================== Created: 2023-01-05 12:19:15 ConfID: 6693429 CauseID: 1557138879 OtherID: 1363322948 JT: Japanese Journal of Applied Physics MD: Akoshima,50,11s,1101,2011,Thermal Diffusivity Measurement for Thermal Spray Coating Attached to Substrate Using Laser Flash Method DOI: 10.1143/JJAP.50.11RE01(Journal) (6693429-N) DOI: 10.7567/JJAP.50.11RE01(Journal) ========================================================== Created: 2023-01-05 12:19:10 ConfID: 6693426 CauseID: 1557138871 OtherID: 1363325453 JT: Japanese Journal of Applied Physics MD: Ohta,50,10s,1001,2011,X-ray Photoelectron Spectroscopy Study of Interfacial Reactions between Metal and Ultrathin Ge Oxide DOI: 10.1143/JJAP.50.10PE01(Journal) (6693426-N) DOI: 10.7567/JJAP.50.10PE01(Journal) ========================================================== Created: 2023-01-05 12:19:12 ConfID: 6693427 CauseID: 1557138872 OtherID: 1363322959 JT: Japanese Journal of Applied Physics MD: Ozawa,50,11s,1105,2011,Relationship of Surface Tension, Oxygen Partial Pressure, and Temperature for Molten Iron DOI: 10.1143/JJAP.50.11RD05(Journal) (6693427-N) DOI: 10.7567/JJAP.50.11RD05(Journal) ========================================================== Created: 2023-01-05 12:19:06 ConfID: 6693424 CauseID: 1557138862 OtherID: 1363322893 JT: Japanese Journal of Applied Physics MD: Kumagai,50,10r,106701,2011,Large-Scale Test Circuits for High-Speed and Highly Accurate Evaluation of Variability and Noise in Metal–Oxide–Semiconductor Field-Effect Transistor Electrical Characteristics DOI: 10.1143/JJAP.50.106701(Journal) (6693424-N) DOI: 10.7567/JJAP.50.106701(Journal) ========================================================== Created: 2023-01-05 12:19:09 ConfID: 6693425 CauseID: 1557138865 OtherID: 1363325472 JT: Japanese Journal of Applied Physics MD: Banerjee,50,10s,1001,2011,High-κ Al2O3/WOx Bilayer Dielectrics for Low-Power Resistive Switching Memory Applications DOI: 10.1143/JJAP.50.10PH01(Journal) (6693425-N) DOI: 10.7567/JJAP.50.10PH01(Journal) ========================================================== Created: 2023-01-05 12:18:25 ConfID: 6693382 CauseID: 1557138792 OtherID: 1363322827 JT: Japanese Journal of Applied Physics MD: Sawada,50,10r,100210,2011,Frequency Modulation Response of a Liquid Crystal Electrooptic Device Doped with Guanine Oligonucleotides DOI: 10.1143/JJAP.50.100210(Journal) (6693382-N) DOI: 10.7567/JJAP.50.100210(Journal) ========================================================== Created: 2023-01-05 12:18:26 ConfID: 6693383 CauseID: 1557138793 OtherID: 1363322852 JT: Japanese Journal of Applied Physics MD: Kukita,50,10r,102202,2011,Introduction of GaInNAs Gain Medium into Circularly Arranged Photonic Crystal Cavity DOI: 10.1143/JJAP.50.102202(Journal) (6693383-N) DOI: 10.7567/JJAP.50.102202(Journal) ========================================================== Created: 2023-01-05 12:18:24 ConfID: 6693380 CauseID: 1557138789 OtherID: 1363324667 JT: Japanese Journal of Applied Physics MD: Shih,50,9s2,921,2011,Effect of Alumina Film on the Surface Acoustic Wave Properties of Crystalline Quartz and Lithium Niobate DOI: 10.1143/JJAP.50.09ND21(Journal) (6693380-N) DOI: 10.7567/JJAP.50.09ND21(Journal) ========================================================== Created: 2023-01-05 12:18:25 ConfID: 6693381 CauseID: 1557138791 OtherID: 1363322883 JT: Japanese Journal of Applied Physics MD: Tajima,50,10r,105801,2011,Degradation Analysis of Electrochromic Switchable Mirror Glass Based on Mg–Ni Thin Film at Constant Temperature and Relative Humidity DOI: 10.1143/JJAP.50.105801(Journal) (6693381-N) DOI: 10.7567/JJAP.50.105801(Journal) ========================================================== Created: 2023-01-05 12:18:23 ConfID: 6693378 CauseID: 1557138787 OtherID: 1363322962 JT: Japanese Journal of Applied Physics MD: Wang,50,11s,1101,2011,Measurement Methods and Applications for Thermophysical Properties at Micro/nanoscales DOI: 10.1143/JJAP.50.11RC01(Journal) (6693378-N) DOI: 10.7567/JJAP.50.11RC01(Journal) ========================================================== Created: 2023-01-05 12:18:15 ConfID: 6693379 CauseID: 1557138777 OtherID: 1363325446 JT: Japanese Journal of Applied Physics MD: Kitayama,50,10s,1005,2011,Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5 nm: Adjustment of Amount of Residual Oxygen Atoms in Metal Layer DOI: 10.1143/JJAP.50.10PA05(Journal) (6693379-N) DOI: 10.7567/JJAP.50.10PA05(Journal) ========================================================== Created: 2023-01-05 12:18:22 ConfID: 6693376 CauseID: 1557138783 OtherID: 1363325459 JT: Japanese Journal of Applied Physics MD: Yun,50,10s,1001,2011,Atomic-Scale Simulations of Early Stage of Oxidation of Vicinal Si(001) Surfaces Using a Reactive Force-Field Potentials DOI: 10.1143/JJAP.50.10PF01(Journal) (6693376-N) DOI: 10.7567/JJAP.50.10PF01(Journal) ========================================================== Created: 2023-01-05 12:18:22 ConfID: 6693377 CauseID: 1557138786 OtherID: 1363325470 JT: Japanese Journal of Applied Physics MD: Chung,50,10s,1005,2011,Semi-Analytical Depletion Width Evaluated by Self-Consistent Schrödinger–Poisson Pair Calculations DOI: 10.1143/JJAP.50.10PF05(Journal) (6693377-N) DOI: 10.7567/JJAP.50.10PF05(Journal) ========================================================== Created: 2023-01-05 12:18:34 ConfID: 6693390 CauseID: 1557138803 OtherID: 1363322850 JT: Japanese Journal of Applied Physics MD: Saha,50,10r,102201,2011,Broadband Second-Harmonic Generation in the Near-Infrared Region in a Tapered Zinc Selenide Slab Using Total Internal Reflection Quasi-Phase Matching DOI: 10.1143/JJAP.50.102201(Journal) (6693390-N) DOI: 10.7567/JJAP.50.102201(Journal) ========================================================== Created: 2023-01-05 12:18:35 ConfID: 6693391 CauseID: 1557138805 OtherID: 1363322841 JT: Japanese Journal of Applied Physics MD: Kim,50,10r,101802,2011,Phase-Change Characteristics and Crystal Structure in Multi Stacked GeTe/InTe Films DOI: 10.1143/JJAP.50.101802(Journal) (6693391-N) DOI: 10.7567/JJAP.50.101802(Journal) ========================================================== Created: 2023-01-05 12:18:33 ConfID: 6693388 CauseID: 1557138801 OtherID: 1363322843 JT: Japanese Journal of Applied Physics MD: Okuno,50,10r,101503,2011,Estimation of Piezoelectric Response Using Maximally Localized Wannier Function and Its Application to the Bismuth-Based Ferroelectric Materials DOI: 10.1143/JJAP.50.101503(Journal) (6693388-N) DOI: 10.7567/JJAP.50.101503(Journal) ========================================================== Created: 2023-01-05 12:18:33 ConfID: 6693389 CauseID: 1557138802 OtherID: 1363324663 JT: Japanese Journal of Applied Physics MD: Moriyoshi,50,9s2,905,2011,Synchrotron Radiation Study on Time-Resolved Tetragonal Lattice Strain of BaTiO3 under Electric Field DOI: 10.1143/JJAP.50.09NE05(Journal) (6693389-N) DOI: 10.7567/JJAP.50.09NE05(Journal) ========================================================== Created: 2023-01-05 12:18:29 ConfID: 6693386 CauseID: 1557138797 OtherID: 1363322866 JT: Japanese Journal of Applied Physics MD: Sohn,50,10r,102703,2011,Tunable Dual-Wavelength Erbium-Doped Fiber Laser Using Single Fiber Bragg Grating with Two Coil Heaters DOI: 10.1143/JJAP.50.102703(Journal) (6693386-N) DOI: 10.7567/JJAP.50.102703(Journal) ========================================================== Created: 2023-01-05 12:18:30 ConfID: 6693387 CauseID: 1557138799 OtherID: 1363322847 JT: Japanese Journal of Applied Physics MD: Tonomura,50,10r,101501,2011,Suppression of Leakage Current of Metal–Insulator–Semiconductor Ta2O5 Capacitors with Al2O3/SiON Buffer Layer DOI: 10.1143/JJAP.50.101501(Journal) (6693387-N) DOI: 10.7567/JJAP.50.101501(Journal) ========================================================== Created: 2023-01-05 12:18:28 ConfID: 6693384 CauseID: 1557138796 OtherID: 1363322833 JT: Japanese Journal of Applied Physics MD: Chitara,50,10r,100206,2011,UV Photodetectors Based on ZnO Nanorods: Role of Defect-Concentration DOI: 10.1143/JJAP.50.100206(Journal) (6693384-N) DOI: 10.7567/JJAP.50.100206(Journal) ========================================================== Created: 2023-01-05 12:18:27 ConfID: 6693385 CauseID: 1557138795 OtherID: 1363325476 JT: Japanese Journal of Applied Physics MD: Selvi,50,10s,1007,2011,High Pressure Oxidation of 4H-SiC in Nitric Acid Vapor DOI: 10.1143/JJAP.50.10PG07(Journal) (6693385-N) DOI: 10.7567/JJAP.50.10PG07(Journal) ========================================================== Created: 2023-01-05 12:18:43 ConfID: 6693398 CauseID: 1557138818 OtherID: 1363322869 JT: Japanese Journal of Applied Physics MD: Ohtake,50,10r,103001,2011,Epitaxial Growth of Metastable hcp-Ni and hcp-NiFe Thin Films on Au(100)fcc Single-Crystal Underlayers and Their Structure Characterization DOI: 10.1143/JJAP.50.103001(Journal) (6693398-N) DOI: 10.7567/JJAP.50.103001(Journal) ========================================================== Created: 2023-01-05 12:18:44 ConfID: 6693399 CauseID: 1557138819 OtherID: 1363324666 JT: Japanese Journal of Applied Physics MD: Yoneda,50,9s2,906,2011,Local Structure Analysis of Bi(Mg0.5Ti0.5)O3 Grown by High Pressure Synthesis DOI: 10.1143/JJAP.50.09NE06(Journal) (6693399-N) DOI: 10.7567/JJAP.50.09NE06(Journal) ========================================================== Created: 2023-01-05 12:18:41 ConfID: 6693396 CauseID: 1557138816 OtherID: 1363322834 JT: Japanese Journal of Applied Physics MD: Ahn,50,10r,100201,2011,Effect of Porosity on Cycle Performance in Three-Dimensional Disk Electrode for Li Ion Battery DOI: 10.1143/JJAP.50.100201(Journal) (6693396-N) DOI: 10.7567/JJAP.50.100201(Journal) ========================================================== Created: 2023-01-05 12:18:42 ConfID: 6693397 CauseID: 1557138817 OtherID: 1363322862 JT: Japanese Journal of Applied Physics MD: Endoh,50,10r,104302,2011,Effect of Gate-Recess Structure on Electron Transport in InP-Based High Electron Mobility Transistors Studied by Monte Carlo Simulations DOI: 10.1143/JJAP.50.104302(Journal) (6693397-N) DOI: 10.7567/JJAP.50.104302(Journal) ========================================================== Created: 2023-01-05 12:18:38 ConfID: 6693394 CauseID: 1557138808 OtherID: 1363322853 JT: Japanese Journal of Applied Physics MD: Ho,50,10r,102501,2011,An Algorithm to Study of the Influence of Partial-Coherent Lights through Three-Dimensional Periodic Microstructures DOI: 10.1143/JJAP.50.102501(Journal) (6693394-N) DOI: 10.7567/JJAP.50.102501(Journal) ========================================================== Created: 2023-01-05 12:18:38 ConfID: 6693395 CauseID: 1557138809 OtherID: 1363324693 JT: Japanese Journal of Applied Physics MD: Yamasue,50,9s2,912,2011,Observation of Polarization Distribution on Si(111) Surface by Scanning Nonlinear Dielectric Microscopy DOI: 10.1143/JJAP.50.09NE12(Journal) (6693395-N) DOI: 10.7567/JJAP.50.09NE12(Journal) ========================================================== Created: 2023-01-05 12:18:35 ConfID: 6693392 CauseID: 1557138806 OtherID: 1363322856 JT: Japanese Journal of Applied Physics MD: Kim,50,10r,102601,2011,Electrochromic Property of MoO3 Thin Films Deposited by Chemical Vapor Transport Synthesis DOI: 10.1143/JJAP.50.102601(Journal) (6693392-N) DOI: 10.7567/JJAP.50.102601(Journal) ========================================================== Created: 2023-01-05 12:18:36 ConfID: 6693393 CauseID: 1557138807 OtherID: 1363322870 JT: Japanese Journal of Applied Physics MD: Kabir,50,10r,102702,2011,Two-Wave Mixing Amplification of Femtosecond Laser Pulses at 800 nm in Rh:BaTiO3 Photorefractive Crystal DOI: 10.1143/JJAP.50.102702(Journal) (6693393-N) DOI: 10.7567/JJAP.50.102702(Journal) ========================================================== Created: 2023-01-05 12:18:48 ConfID: 6693406 CauseID: 1557138829 OtherID: 1363322871 JT: Japanese Journal of Applied Physics MD: Simanullang,50,10r,105002,2011,Growth of Narrow and Straight Germanium Nanowires by Vapor–Liquid–Solid Chemical Vapor Deposition DOI: 10.1143/JJAP.50.105002(Journal) (6693406-N) DOI: 10.7567/JJAP.50.105002(Journal) ========================================================== Created: 2023-01-05 12:18:49 ConfID: 6693407 CauseID: 1557138830 OtherID: 1363322889 JT: Japanese Journal of Applied Physics MD: Siddik,50,10r,105802,2011,Characterization of Resistive Switching States in W/Pr0.7Ca0.3MnO3 for a Submicron (φ250 nm) Via-Hole Structure DOI: 10.1143/JJAP.50.105802(Journal) (6693407-N) DOI: 10.7567/JJAP.50.105802(Journal) ========================================================== Created: 2023-01-05 12:18:47 ConfID: 6693404 CauseID: 1557138827 OtherID: 1363322976 JT: Japanese Journal of Applied Physics MD: Lee,50,11s,1102,2011,Specific Heat Capacity of Gallium Nitride DOI: 10.1143/JJAP.50.11RG02(Journal) (6693404-N) DOI: 10.7567/JJAP.50.11RG02(Journal) ========================================================== Created: 2023-01-05 12:18:47 ConfID: 6693405 CauseID: 1557138828 OtherID: 1363322867 JT: Japanese Journal of Applied Physics MD: Yu,50,10r,104101,2011,Performance Improvement of Pentacene Organic Thin Film Transistor by Inserting 1,1'-Bis(di-4-tolylaminophenyl) Cyclohexane Hole Transport Buffer Layer DOI: 10.1143/JJAP.50.104101(Journal) (6693405-N) DOI: 10.7567/JJAP.50.104101(Journal) ========================================================== Created: 2023-01-05 12:18:45 ConfID: 6693402 CauseID: 1557138824 OtherID: 1363322821 JT: Japanese Journal of Applied Physics MD: Kang,50,10r,100204,2011,A Compact Model for Channel Coupling in Sub-30 nm NAND Flash Memory Device DOI: 10.1143/JJAP.50.100204(Journal) (6693402-N) DOI: 10.7567/JJAP.50.100204(Journal) ========================================================== Created: 2023-01-05 12:18:46 ConfID: 6693403 CauseID: 1557138826 OtherID: 1363322891 JT: Japanese Journal of Applied Physics MD: Park,50,10r,106202,2011,Dual Surface Discharge Mode for Improving Luminous Efficacy in AC Plasma Display Panel DOI: 10.1143/JJAP.50.106202(Journal) (6693403-N) DOI: 10.7567/JJAP.50.106202(Journal) ========================================================== Created: 2023-01-05 12:18:44 ConfID: 6693400 CauseID: 1557138820 OtherID: 1363322823 JT: Japanese Journal of Applied Physics MD: Kuo,50,10r,100211,2011,Optical Trapping of Beads and Jurkat Cells Using Micromachined Fresnel Zone Plate Integrated with Microfluidic Chip DOI: 10.1143/JJAP.50.100211(Journal) (6693400-N) DOI: 10.7567/JJAP.50.100211(Journal) ========================================================== Created: 2023-01-05 12:18:45 ConfID: 6693401 CauseID: 1557138825 OtherID: 1363324689 JT: Japanese Journal of Applied Physics MD: Tanaka,50,9s2,903,2011,Fabrication and Dielectric Properties of (Ba0.7Sr0.3)TiO3–Glass Composites DOI: 10.1143/JJAP.50.09NF03(Journal) (6693401-N) DOI: 10.7567/JJAP.50.09NF03(Journal) ========================================================== Created: 2023-01-05 12:32:19 ConfID: 6693606 CauseID: 1557140657 OtherID: 1363320240 JT: Japanese Journal of Applied Physics MD: Kajita,51,1s,103,2012,Near Infrared Radiation from Heated Nanostructured Tungsten DOI: 10.1143/JJAP.51.01AJ03(Journal) (6693606-N) DOI: 10.7567/JJAP.51.01AJ03(Journal) ========================================================== Created: 2023-01-05 12:32:21 ConfID: 6693607 CauseID: 1557140664 OtherID: 1363320219 JT: Japanese Journal of Applied Physics MD: Kim,51,1s,104,2012,Crystal Orientation of GaN Nanostructures Grown on Al2O3 and Si(111) with a Zr Buffer Layer DOI: 10.1143/JJAP.51.01AF04(Journal) (6693607-N) DOI: 10.7567/JJAP.51.01AF04(Journal) ========================================================== Created: 2023-01-05 12:32:17 ConfID: 6693604 CauseID: 1557140651 OtherID: 1363320488 JT: Japanese Journal of Applied Physics MD: Sasaki,51,2s,201,2012,Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001) DOI: 10.1143/JJAP.51.02BP01(Journal) (6693604-N) DOI: 10.7567/JJAP.51.02BP01(Journal) ========================================================== Created: 2023-01-05 12:32:19 ConfID: 6693605 CauseID: 1557140656 OtherID: 1363320121 JT: Japanese Journal of Applied Physics MD: Dong,51,1r,10205,2012,Accurate Determination of Iron Density in Large Helical Device Based on Absolute Intensity Profile Measurement of Extreme Ultraviolet Spectral Lines DOI: 10.1143/JJAP.51.010205(Journal) (6693605-N) DOI: 10.7567/JJAP.51.010205(Journal) ========================================================== Created: 2023-01-05 12:32:14 ConfID: 6693602 CauseID: 1557140642 OtherID: 1363320110 JT: Japanese Journal of Applied Physics MD: Izawa,51,1r,10101,2012,Evolution of Tetragonal Phase in the FeSe Wire Fabricated by a Novel Chemical-Transformation Powder-in-Tube Process DOI: 10.1143/JJAP.51.010101(Journal) (6693602-N) DOI: 10.7567/JJAP.51.010101(Journal) ========================================================== Created: 2023-01-05 12:32:16 ConfID: 6693603 CauseID: 1557140650 OtherID: 1363320513 JT: Japanese Journal of Applied Physics MD: Irikawa,51,2s,204,2012,Development of the Transparent Conductive Oxide Layer for Nanocrystalline Cubic Silicon Carbide/Silicon Heterojunction Solar Cells with Aluminum Oxide Passivation Layers DOI: 10.1143/JJAP.51.02BP04(Journal) (6693603-N) DOI: 10.7567/JJAP.51.02BP04(Journal) ========================================================== Created: 2023-01-05 12:32:07 ConfID: 6693600 CauseID: 1557140627 OtherID: 1363320147 JT: Japanese Journal of Applied Physics MD: Luo,51,1r,12101,2012,Vertical InGaN Multiple Quantum Wells Light-Emitting Diodes Structures Transferred from Si(111) Substrate onto Electroplating Copper Submount with Through-Holes DOI: 10.1143/JJAP.51.012101(Journal) (6693600-N) DOI: 10.7567/JJAP.51.012101(Journal) ========================================================== Created: 2023-01-05 12:32:13 ConfID: 6693601 CauseID: 1557140639 OtherID: 1363320451 JT: Japanese Journal of Applied Physics MD: Sulthoni,51,2s,210,2012,A Multi-Purpose Electrostatically Defined Silicon Quantum Dot Structure DOI: 10.1143/JJAP.51.02BJ10(Journal) (6693601-N) DOI: 10.7567/JJAP.51.02BJ10(Journal) ========================================================== Created: 2023-01-05 12:32:29 ConfID: 6693614 CauseID: 1557140676 OtherID: 1363323026 JT: Japanese Journal of Applied Physics MD: Sakaguchi,50,12r,125501,2011,Simultaneous Diffusion of Oxygen Tracer and Lithium Impurity in Aluminum Doped Zinc Oxide DOI: 10.1143/JJAP.50.125501(Journal) (6693614-N) DOI: 10.7567/JJAP.50.125501(Journal) ========================================================== Created: 2023-01-05 12:32:26 ConfID: 6693615 CauseID: 1557140679 OtherID: 1363320400 JT: Japanese Journal of Applied Physics MD: Kiumarsi,51,2s,201,2012,A Three-Stage Inverter-Based Stacked Power Amplifier in 65 nm Complementary Metal Oxide Semiconductor Process DOI: 10.1143/JJAP.51.02BC01(Journal) (6693615-N) DOI: 10.7567/JJAP.51.02BC01(Journal) ========================================================== Created: 2023-01-05 12:32:24 ConfID: 6693612 CauseID: 1557140670 OtherID: 1363320411 JT: Japanese Journal of Applied Physics MD: Ozawa,51,2s,204,2012,A 220-nA 32-kHz Crystal Oscillator with Wide Voltage Range (1.0–5.5 V) for Battery-Operated Microcontrollers DOI: 10.1143/JJAP.51.02BE04(Journal) (6693612-N) DOI: 10.7567/JJAP.51.02BE04(Journal) ========================================================== Created: 2023-01-05 12:32:29 ConfID: 6693613 CauseID: 1557140675 OtherID: 1363323024 JT: Japanese Journal of Applied Physics MD: Mieno,50,12r,125102,2011,Production of Various Carbon Nanoclusters by Impact Reaction Using Light-Gas Gun as Simulation of Asteroid Collisions in Space DOI: 10.1143/JJAP.50.125102(Journal) (6693613-N) DOI: 10.7567/JJAP.50.125102(Journal) ========================================================== Created: 2023-01-05 12:32:23 ConfID: 6693610 CauseID: 1557140667 OtherID: 1363320479 JT: Japanese Journal of Applied Physics MD: Maeda,51,2s,203,2012,Fabrication and Characterization of InP Nanowire Light-Emitting Diodes DOI: 10.1143/JJAP.51.02BN03(Journal) (6693610-N) DOI: 10.7567/JJAP.51.02BN03(Journal) ========================================================== Created: 2023-01-05 12:32:24 ConfID: 6693611 CauseID: 1557140669 OtherID: 1363320506 JT: Japanese Journal of Applied Physics MD: Kato,51,2s,209,2012,Metal-Assisted Chemical Etching Using Silica Nanoparticle for the Fabrication of a Silicon Nanowire Array DOI: 10.1143/JJAP.51.02BP09(Journal) (6693611-N) DOI: 10.7567/JJAP.51.02BP09(Journal) ========================================================== Created: 2023-01-05 12:32:22 ConfID: 6693608 CauseID: 1557140665 OtherID: 1363320123 JT: Japanese Journal of Applied Physics MD: Kojima,51,1r,10204,2012,Magnetic Anisotropy and Chemical Order of Artificially Synthesized L10-Ordered FeNi Films on Au–Cu–Ni Buffer Layers DOI: 10.1143/JJAP.51.010204(Journal) (6693608-N) DOI: 10.7567/JJAP.51.010204(Journal) ========================================================== Created: 2023-01-05 12:32:22 ConfID: 6693609 CauseID: 1557140666 OtherID: 1363320429 JT: Japanese Journal of Applied Physics MD: Omi,51,2s,207,2012,Energy Transfers between Er3+ Ions Located at the Two Crystalographic Sites of Er2O3 Grown on Si(111) DOI: 10.1143/JJAP.51.02BG07(Journal) (6693609-N) DOI: 10.7567/JJAP.51.02BG07(Journal) ========================================================== Created: 2023-01-05 12:32:43 ConfID: 6693622 CauseID: 1557140722 OtherID: 1363320425 JT: Japanese Journal of Applied Physics MD: Williams,51,2s,205,2012,Optimisation of Coupling between Photonic Crystal and Active Elements in an Epitaxially Regrown GaAs Based Photonic Crystal Surface Emitting Laser DOI: 10.1143/JJAP.51.02BG05(Journal) (6693622-N) DOI: 10.7567/JJAP.51.02BG05(Journal) ========================================================== Created: 2023-01-05 12:32:49 ConfID: 6693623 CauseID: 1557140730 OtherID: 1363320417 JT: Japanese Journal of Applied Physics MD: Lee,51,2s,203,2012,1.2–17.6 GHz Ring-Oscillator-Based Phase-Locked Loop with Injection Locking in 65 nm Complementary Metal Oxide Semiconductor DOI: 10.1143/JJAP.51.02BE03(Journal) (6693623-N) DOI: 10.7567/JJAP.51.02BE03(Journal) ========================================================== Created: 2023-01-05 12:32:36 ConfID: 6693620 CauseID: 1557140707 OtherID: 1363320399 JT: Japanese Journal of Applied Physics MD: Kim,51,2s,210,2012,Effect of La2O3 Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate Stacks DOI: 10.1143/JJAP.51.02BC10(Journal) (6693620-N) DOI: 10.7567/JJAP.51.02BC10(Journal) ========================================================== Created: 2023-01-05 12:32:41 ConfID: 6693621 CauseID: 1557140719 OtherID: 1363323031 JT: Japanese Journal of Applied Physics MD: Sugita,50,12r,126602,2011,Evaluation of Electrophoretic Migration by Optical and Current Responses to Cyclic-Polarity-Reversed Triangular Voltage DOI: 10.1143/JJAP.50.126602(Journal) (6693621-N) DOI: 10.7567/JJAP.50.126602(Journal) ========================================================== Created: 2023-01-05 12:32:38 ConfID: 6693618 CauseID: 1557140702 OtherID: 1363320430 JT: Japanese Journal of Applied Physics MD: Fukano,51,2s,204,2012,Responsivity Characteristics of InP/InGaAs Heterojunction Phototransistor with a Strained InAs/InGaAs Multiquantum Well Absorption Layer in the Base or Collector DOI: 10.1143/JJAP.51.02BG04(Journal) (6693618-N) DOI: 10.7567/JJAP.51.02BG04(Journal) ========================================================== Created: 2023-01-05 12:32:39 ConfID: 6693619 CauseID: 1557140704 OtherID: 1363320212 JT: Japanese Journal of Applied Physics MD: Shin,51,1s,105,2012,A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy DOI: 10.1143/JJAP.51.01AF05(Journal) (6693619-N) DOI: 10.7567/JJAP.51.01AF05(Journal) ========================================================== Created: 2023-01-05 12:32:30 ConfID: 6693616 CauseID: 1557140687 OtherID: 1363320157 JT: Japanese Journal of Applied Physics MD: Lee,51,1r,15502,2012,Transparent Conducting Nb-Doped TiO2 Electrodes Activated by Laser Annealing for Inexpensive Flexible Organic Solar Cells DOI: 10.1143/JJAP.51.015502(Journal) (6693616-N) DOI: 10.7567/JJAP.51.015502(Journal) ========================================================== Created: 2023-01-05 12:32:31 ConfID: 6693617 CauseID: 1557140691 OtherID: 1363320391 JT: Japanese Journal of Applied Physics MD: Low,51,2s,204,2012,Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor DOI: 10.1143/JJAP.51.02BC04(Journal) (6693617-N) DOI: 10.7567/JJAP.51.02BC04(Journal) ========================================================== Created: 2023-01-05 12:32:52 ConfID: 6693630 CauseID: 1557140752 OtherID: 1363320435 JT: Japanese Journal of Applied Physics MD: Zhu,51,2s,203,2012,In0.53Ga0.47As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Shallow Metallic Source and Drain Extensions and Offset N+ Doped Regions for Leakage Suppression DOI: 10.1143/JJAP.51.02BF03(Journal) (6693630-N) DOI: 10.7567/JJAP.51.02BF03(Journal) ========================================================== Created: 2023-01-05 12:32:55 ConfID: 6693631 CauseID: 1557140759 OtherID: 1363323029 JT: Japanese Journal of Applied Physics MD: Yamaki,50,12r,125801,2011,Thickness Dependences of Resistivity and Temperature Coefficient of Resistance for Ge Thin Films Sandwiched between Si Layers for Uncooled Infrared Imaging Sensor DOI: 10.1143/JJAP.50.125801(Journal) (6693631-N) DOI: 10.7567/JJAP.50.125801(Journal) ========================================================== Created: 2023-01-05 12:32:54 ConfID: 6693628 CauseID: 1557140748 OtherID: 1363320482 JT: Japanese Journal of Applied Physics MD: Sasagawa,51,2s,201,2012,Complementary Metal–Oxide–Semiconductor Image Sensor with Microchamber Array for Fluorescent Bead Counting DOI: 10.1143/JJAP.51.02BL01(Journal) (6693628-N) DOI: 10.7567/JJAP.51.02BL01(Journal) ========================================================== Created: 2023-01-05 12:32:51 ConfID: 6693629 CauseID: 1557140749 OtherID: 1363320207 JT: Japanese Journal of Applied Physics MD: Jung,51,1s,102,2012,A Comparative Histological Study of Bone Healing in Rat Calvarial Defect Using the Erbium-Doped Yttrium Aluminum Garnet Laser and Rotary Instruments DOI: 10.1143/JJAP.51.01AE02(Journal) (6693629-N) DOI: 10.7567/JJAP.51.01AE02(Journal) ========================================================== Created: 2023-01-05 12:32:50 ConfID: 6693626 CauseID: 1557140744 OtherID: 1363320179 JT: Japanese Journal of Applied Physics MD: Morishita,51,1r,16001,2012,Gas Flow Characteristics in a Plasma Process Chamber and Proposal of New Pulse-Controlled Gas Injection Method Using Interference Matrix Operation for Rapid Stabilization of Gas Pressure DOI: 10.1143/JJAP.51.016001(Journal) (6693626-N) DOI: 10.7567/JJAP.51.016001(Journal) ========================================================== Created: 2023-01-05 12:32:53 ConfID: 6693627 CauseID: 1557140746 OtherID: 1363320471 JT: Japanese Journal of Applied Physics MD: Su,51,2s,203,2012,Application of Inorganic/Organic Stacked Hole Transporting Layer in Organic Solar Cells DOI: 10.1143/JJAP.51.02BK03(Journal) (6693627-N) DOI: 10.7567/JJAP.51.02BK03(Journal) ========================================================== Created: 2023-01-05 12:32:46 ConfID: 6693624 CauseID: 1557140733 OtherID: 1363320428 JT: Japanese Journal of Applied Physics MD: Nada,51,2s,203,2012,Inverted InAlAs/InGaAs Avalanche Photodiode with Low–High–Low Electric Field Profile DOI: 10.1143/JJAP.51.02BG03(Journal) (6693624-N) DOI: 10.7567/JJAP.51.02BG03(Journal) ========================================================== Created: 2023-01-05 12:32:47 ConfID: 6693625 CauseID: 1557140734 OtherID: 1363320174 JT: Japanese Journal of Applied Physics MD: Fan,51,1r,16503,2012,Effect of Inserting Teflon as a Surface Modification Layer on Bottom-Contact Pentacene-Based Organic Thin-Film Transistors DOI: 10.1143/JJAP.51.016503(Journal) (6693625-N) DOI: 10.7567/JJAP.51.016503(Journal) ========================================================== Created: 2023-01-05 12:31:28 ConfID: 6693574 CauseID: 1557140495 OtherID: 1363320410 JT: Japanese Journal of Applied Physics MD: Hongxin,51,2s,209,2012,Endurance Enhancement of Elevated-Confined Phase Change Random Access Memory DOI: 10.1143/JJAP.51.02BD09(Journal) (6693574-N) DOI: 10.7567/JJAP.51.02BD09(Journal) ========================================================== Created: 2023-01-05 12:31:26 ConfID: 6693575 CauseID: 1557140500 OtherID: 1363320475 JT: Japanese Journal of Applied Physics MD: Hsieh,51,2s,212,2012,Electron Emission Properties of GaAsN/GaAs Quantum Well Containing N-Related Localized States: The Influence of Illuminance DOI: 10.1143/JJAP.51.02BJ12(Journal) (6693575-N) DOI: 10.7567/JJAP.51.02BJ12(Journal) ========================================================== Created: 2023-01-05 12:31:25 ConfID: 6693572 CauseID: 1557140492 OtherID: 1363320366 JT: Japanese Journal of Applied Physics MD: Shin,51,2s,202,2012,Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal–Oxide–Semiconductor Field Effect Transistors DOI: 10.1143/JJAP.51.02BA02(Journal) (6693572-N) DOI: 10.7567/JJAP.51.02BA02(Journal) ========================================================== Created: 2023-01-05 12:31:27 ConfID: 6693573 CauseID: 1557140493 OtherID: 1363320445 JT: Japanese Journal of Applied Physics MD: Tanamoto,51,2s,207,2012,Steady-State Solution for Dark States Using a Three-Level System in Coupled Quantum Dots DOI: 10.1143/JJAP.51.02BJ07(Journal) (6693573-N) DOI: 10.7567/JJAP.51.02BJ07(Journal) ========================================================== Created: 2023-01-05 12:31:21 ConfID: 6693570 CauseID: 1557140481 OtherID: 1363320218 JT: Japanese Journal of Applied Physics MD: Jo,51,1s,103,2012,Selective Growth of Microscale GaN Pyramids on Apex of GaN Pyramids DOI: 10.1143/JJAP.51.01AF03(Journal) (6693570-N) DOI: 10.7567/JJAP.51.01AF03(Journal) ========================================================== Created: 2023-01-05 12:31:22 ConfID: 6693571 CauseID: 1557140485 OtherID: 1363320398 JT: Japanese Journal of Applied Physics MD: Mizuno,51,2s,203,2012,Experimental Study of Silicon Monolayers for Future Extremely Thin Silicon-on-Insulator Devices: Phonon/Band Structures Modulation Due to Quantum Confinement Effects DOI: 10.1143/JJAP.51.02BC03(Journal) (6693571-N) DOI: 10.7567/JJAP.51.02BC03(Journal) ========================================================== Created: 2023-01-05 12:31:19 ConfID: 6693568 CauseID: 1557140465 OtherID: 1363320171 JT: Japanese Journal of Applied Physics MD: Akiyama,51,1r,18001,2012,Reconstructions on AlN Polar Surfaces under Hydrogen Rich Conditions DOI: 10.1143/JJAP.51.018001(Journal) (6693568-N) DOI: 10.7567/JJAP.51.018001(Journal) ========================================================== Created: 2023-01-05 12:31:12 ConfID: 6693569 CauseID: 1557140457 OtherID: 1363320367 JT: Japanese Journal of Applied Physics MD: Jeon,51,2s,202,2012,System-on-Package Platform with Thick Benzocyclobutene Layer for Millimeter-Wave Antenna Application DOI: 10.1143/JJAP.51.02BB02(Journal) (6693569-N) DOI: 10.7567/JJAP.51.02BB02(Journal) ========================================================== Created: 2023-01-05 12:31:36 ConfID: 6693582 CauseID: 1557140537 OtherID: 1363320466 JT: Japanese Journal of Applied Physics MD: Yoshida,51,2s,205,2012,Work Function Controlled Zn:Cu Electrode for All-Printed Polymer Diode DOI: 10.1143/JJAP.51.02BK05(Journal) (6693582-N) DOI: 10.7567/JJAP.51.02BK05(Journal) ========================================================== Created: 2023-01-05 12:31:43 ConfID: 6693583 CauseID: 1557140557 OtherID: 1363320448 JT: Japanese Journal of Applied Physics MD: Yatago,51,2s,201,2012,Growth and Characterization of MnAs Nanoclusters Embedded in GaAs Nanowires by Metal–Organic Vapor Phase Epitaxy DOI: 10.1143/JJAP.51.02BH01(Journal) (6693583-N) DOI: 10.7567/JJAP.51.02BH01(Journal) ========================================================== Created: 2023-01-05 12:31:35 ConfID: 6693580 CauseID: 1557140536 OtherID: 1363320233 JT: Japanese Journal of Applied Physics MD: Kim,51,1s,110,2012,Numerical Design of SiO2 Bridges in Stretchable Thin Film Transistors DOI: 10.1143/JJAP.51.01AG10(Journal) (6693580-N) DOI: 10.7567/JJAP.51.01AG10(Journal) ========================================================== Created: 2023-01-05 12:31:44 ConfID: 6693581 CauseID: 1557140551 OtherID: 1363320128 JT: Japanese Journal of Applied Physics MD: Suemune,51,1r,10114,2012,Cooper-Pair Radiative Recombination in Semiconductor Heterostructures: Impact on Quantum Optics and Optoelectronics DOI: 10.1143/JJAP.51.010114(Journal) (6693581-N) DOI: 10.7567/JJAP.51.010114(Journal) ========================================================== Created: 2023-01-05 12:31:32 ConfID: 6693578 CauseID: 1557140513 OtherID: 1363320376 JT: Japanese Journal of Applied Physics MD: Choi,51,2s,205,2012,Suppressed Thermally Induced Flatband Voltage Instabilities with Binary Noble Metal Gated Metal–Oxide–Semiconductor Capacitors DOI: 10.1143/JJAP.51.02BA05(Journal) (6693578-N) DOI: 10.7567/JJAP.51.02BA05(Journal) ========================================================== Created: 2023-01-05 12:31:33 ConfID: 6693579 CauseID: 1557140514 OtherID: 1363320436 JT: Japanese Journal of Applied Physics MD: Shimizu,51,2s,202,2012,Reduced Threshold Current and Enhanced Extinction Ratio in a Magnetically Controllable Fe50Co50–InGaAlAs/InP Nonreciprocal Semiconductor Laser DOI: 10.1143/JJAP.51.02BG02(Journal) (6693579-N) DOI: 10.7567/JJAP.51.02BG02(Journal) ========================================================== Created: 2023-01-05 12:31:31 ConfID: 6693576 CauseID: 1557140506 OtherID: 1363320248 JT: Japanese Journal of Applied Physics MD: Lai,51,1s,110,2012,Resistance Switching in Ni/HfOx/Ni Nonvolatile Memory Device with CF4/O2 Plasma Post-treatment DOI: 10.1143/JJAP.51.01AJ10(Journal) (6693576-N) DOI: 10.7567/JJAP.51.01AJ10(Journal) ========================================================== Created: 2023-01-05 12:31:31 ConfID: 6693577 CauseID: 1557140512 OtherID: 1363320126 JT: Japanese Journal of Applied Physics MD: Ukibe,51,1r,10115,2012,Soft X-ray Detection Performance of Superconducting Tunnel Junction Arrays with Asymmetric Tunnel Junction Layer Structure DOI: 10.1143/JJAP.51.010115(Journal) (6693577-N) DOI: 10.7567/JJAP.51.010115(Journal) ========================================================== Created: 2023-01-05 12:31:54 ConfID: 6693590 CauseID: 1557140587 OtherID: 1363320247 JT: Japanese Journal of Applied Physics MD: Sangprasert,51,1s,104,2012,Epoxy Resin Surface Functionalization Using Atmospheric Pressure Plasma Jet Treatment DOI: 10.1143/JJAP.51.01AJ04(Journal) (6693590-N) DOI: 10.7567/JJAP.51.01AJ04(Journal) ========================================================== Created: 2023-01-05 12:31:58 ConfID: 6693591 CauseID: 1557140599 OtherID: 1363320476 JT: Japanese Journal of Applied Physics MD: Li,51,2s,207,2012,Two-Step Polarization Reversal Process in Pentacene/Poly(vinylidene fluoride–trifluoroethylene) Double-Layer Capacitor: Reduced Coercive Field DOI: 10.1143/JJAP.51.02BK07(Journal) (6693591-N) DOI: 10.7567/JJAP.51.02BK07(Journal) ========================================================== Created: 2023-01-05 12:31:50 ConfID: 6693588 CauseID: 1557140579 OtherID: 1363320472 JT: Japanese Journal of Applied Physics MD: Higashi,51,2s,211,2012,Thermal Annealing Effects on Optical Anisotropy of Aligned Thiophene-Based π-Conjugated Polymer Films Fabricated by Capillary Action DOI: 10.1143/JJAP.51.02BK11(Journal) (6693588-N) DOI: 10.7567/JJAP.51.02BK11(Journal) ========================================================== Created: 2023-01-05 12:31:54 ConfID: 6693589 CauseID: 1557140586 OtherID: 1363320223 JT: Japanese Journal of Applied Physics MD: Hsieh,51,1s,106,2012,Fabrication of Graphene-Based Electrochemical Capacitors DOI: 10.1143/JJAP.51.01AH06(Journal) (6693589-N) DOI: 10.7567/JJAP.51.01AH06(Journal) ========================================================== Created: 2023-01-05 12:31:48 ConfID: 6693586 CauseID: 1557140571 OtherID: 1363320379 JT: Japanese Journal of Applied Physics MD: Kume,51,2s,201,2012,Basic Performance of a Logic Intellectual Property Compatible Embedded Dynamic Random Access Memory with Cylinder Capacitors in Low-k/Cu Back End on the Line Layers DOI: 10.1143/JJAP.51.02BB01(Journal) (6693586-N) DOI: 10.7567/JJAP.51.02BB01(Journal) ========================================================== Created: 2023-01-05 12:31:48 ConfID: 6693587 CauseID: 1557140572 OtherID: 1363320246 JT: Japanese Journal of Applied Physics MD: Reisgen,51,1s,111,2012,Hardfacing of Bulk Nanophase Coatings DOI: 10.1143/JJAP.51.01AJ11(Journal) (6693587-N) DOI: 10.7567/JJAP.51.01AJ11(Journal) ========================================================== Created: 2023-01-05 12:31:45 ConfID: 6693584 CauseID: 1557140565 OtherID: 1363320365 JT: Japanese Journal of Applied Physics MD: Morita,51,2s,204,2012,Extremely Scaled (∼0.2 nm) Equivalent Oxide Thickness of Higher-k (k = 40) HfO2 Gate Stacks Prepared by Atomic Layer Deposition and Oxygen-Controlled Cap Post-Deposition Annealing DOI: 10.1143/JJAP.51.02BA04(Journal) (6693584-N) DOI: 10.7567/JJAP.51.02BA04(Journal) ========================================================== Created: 2023-01-05 12:31:46 ConfID: 6693585 CauseID: 1557140568 OtherID: 1363320442 JT: Japanese Journal of Applied Physics MD: Okumura,51,2s,202,2012,Growth of Nitrogen-Polar 2H-AlN on Step-Height-Controlled 6H-SiC(0001̄) Substrate by Molecular-Beam Epitaxy DOI: 10.1143/JJAP.51.02BH02(Journal) (6693585-N) DOI: 10.7567/JJAP.51.02BH02(Journal) ========================================================== Created: 2023-01-05 12:32:08 ConfID: 6693598 CauseID: 1557140621 OtherID: 1363320501 JT: Japanese Journal of Applied Physics MD: Nakashima,51,2s,206,2012,Dynamic-Carrier-Distribution-Based Compact Modeling of p–i–n Diode Reverse Recovery Effects DOI: 10.1143/JJAP.51.02BP06(Journal) (6693598-N) DOI: 10.7567/JJAP.51.02BP06(Journal) ========================================================== Created: 2023-01-05 12:32:09 ConfID: 6693599 CauseID: 1557140623 OtherID: 1363320185 JT: Japanese Journal of Applied Physics MD: Ochi,51,1r,16601,2012,Picosecond Soft-X-ray Laser Interferometer for Probing Nanometer Surface Structure DOI: 10.1143/JJAP.51.016601(Journal) (6693599-N) DOI: 10.7567/JJAP.51.016601(Journal) ========================================================== Created: 2023-01-05 12:32:05 ConfID: 6693597 CauseID: 1557140620 OtherID: 1363320463 JT: Japanese Journal of Applied Physics MD: Chen,51,2s,201,2012,Analysis of Anomalous Discharging Processes in Pentacene/C60 Double-Layer Organic Solar Cell DOI: 10.1143/JJAP.51.02BK01(Journal) (6693597-N) DOI: 10.7567/JJAP.51.02BK01(Journal) ========================================================== Created: 2023-01-05 12:32:00 ConfID: 6693594 CauseID: 1557140611 OtherID: 1363320469 JT: Japanese Journal of Applied Physics MD: Kang,51,2s,210,2012,Solvent Dependence of Vacuum-Dried C60 Thin-Film Transistors DOI: 10.1143/JJAP.51.02BK10(Journal) (6693594-N) DOI: 10.7567/JJAP.51.02BK10(Journal) ========================================================== Created: 2023-01-05 12:32:01 ConfID: 6693595 CauseID: 1557140613 OtherID: 1363320491 JT: Japanese Journal of Applied Physics MD: Fukatani,51,2s,204,2012,Fabrication of MgAl2O4 Thin Films on Ferromagnetic Heusler Alloy Fe2CrSi by Reactive Magnetron Sputtering DOI: 10.1143/JJAP.51.02BM04(Journal) (6693595-N) DOI: 10.7567/JJAP.51.02BM04(Journal) ========================================================== Created: 2023-01-05 12:32:04 ConfID: 6693592 CauseID: 1557140609 OtherID: 1363320485 JT: Japanese Journal of Applied Physics MD: Jang,51,2s,205,2012,Fabrication of High Performance Ion-Sensitive Field-Effect Transistors Using an Engineered Sensing Membrane for Bio-Sensor Application DOI: 10.1143/JJAP.51.02BL05(Journal) (6693592-N) DOI: 10.7567/JJAP.51.02BL05(Journal) ========================================================== Created: 2023-01-05 12:32:04 ConfID: 6693593 CauseID: 1557140610 OtherID: 1363323045 JT: Japanese Journal of Applied Physics MD: Xie,50,12r,126601,2011,Universal Formula for Secondary Electron Yield of Metals at High Electron Energy and Incident Angle θ DOI: 10.1143/JJAP.50.126601(Journal) (6693593-N) DOI: 10.7567/JJAP.50.126601(Journal) ========================================================== Created: 2023-01-05 12:30:39 ConfID: 6693542 CauseID: 1557140346 OtherID: 1363320186 JT: Japanese Journal of Applied Physics MD: Kim,51,1r,15802,2012,Investigation of Cu-Deficient Copper Gallium Selenide Thin Film as a Photocathode for Photoelectrochemical Water Splitting DOI: 10.1143/JJAP.51.015802(Journal) (6693542-N) DOI: 10.7567/JJAP.51.015802(Journal) ========================================================== Created: 2023-01-05 12:30:40 ConfID: 6693543 CauseID: 1557140363 OtherID: 1363320458 JT: Japanese Journal of Applied Physics MD: Takada,51,2s,201,2012,Multi-Electron Wave Packet Dynamics in Applied Electric Field DOI: 10.1143/JJAP.51.02BJ01(Journal) (6693543-N) DOI: 10.7567/JJAP.51.02BJ01(Journal) ========================================================== Created: 2023-01-05 12:30:32 ConfID: 6693540 CauseID: 1557140334 OtherID: 1363320198 JT: Japanese Journal of Applied Physics MD: Miyawaki,51,1s,105,2012,Low-Temperature Fabrication of Germanium Nanostructures by Ion Irradiation: Effect of Supplied Particle Species DOI: 10.1143/JJAP.51.01AB05(Journal) (6693540-N) DOI: 10.7567/JJAP.51.01AB05(Journal) ========================================================== Created: 2023-01-05 12:30:33 ConfID: 6693541 CauseID: 1557140335 OtherID: 1363320202 JT: Japanese Journal of Applied Physics MD: Lin,51,1s,108,2012,Cu(ReTaNx) Copper Alloy Films Suitable for Electronic-Device Manufacturing-Process Simplification DOI: 10.1143/JJAP.51.01AC08(Journal) (6693541-N) DOI: 10.7567/JJAP.51.01AC08(Journal) ========================================================== Created: 2023-01-05 12:30:30 ConfID: 6693538 CauseID: 1557140328 OtherID: 1363320155 JT: Japanese Journal of Applied Physics MD: Horio,51,1r,15604,2012,Temperature Dependence of Oxygen Diffusion and Crystal Structure for Thermally Oxidized Titanium Thin Films DOI: 10.1143/JJAP.51.015604(Journal) (6693538-N) DOI: 10.7567/JJAP.51.015604(Journal) ========================================================== Created: 2023-01-05 12:30:31 ConfID: 6693539 CauseID: 1557140331 OtherID: 1363320239 JT: Japanese Journal of Applied Physics MD: Lin,51,1s,109,2012,Plasma Nitridation of Hydrogenated Silicon Nitride Film DOI: 10.1143/JJAP.51.01AJ09(Journal) (6693539-N) DOI: 10.7567/JJAP.51.01AJ09(Journal) ========================================================== Created: 2023-01-05 12:30:27 ConfID: 6693536 CauseID: 1557140320 OtherID: 1363320241 JT: Japanese Journal of Applied Physics MD: Takeuchi,51,1s,101,2012,Characterization of Damage of Al2O3/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation DOI: 10.1143/JJAP.51.01AJ01(Journal) (6693536-N) DOI: 10.7567/JJAP.51.01AJ01(Journal) ========================================================== Created: 2023-01-05 12:30:27 ConfID: 6693537 CauseID: 1557140319 OtherID: 1363323018 JT: Japanese Journal of Applied Physics MD: Cao,50,12r,125001,2011,Fabrication and Characterization of Cu2ZnSnSxSe4-x Solid Solution Nanocrystallines DOI: 10.1143/JJAP.50.125001(Journal) (6693537-N) DOI: 10.7567/JJAP.50.125001(Journal) ========================================================== Created: 2023-01-05 12:30:46 ConfID: 6693550 CauseID: 1557140380 OtherID: 1363320189 JT: Japanese Journal of Applied Physics MD: Lin,51,1s,103,2012,Low Temperature Plasma Enhanced Chemical Vapor Deposition-Synthesized Electrochromic MoOxCy Thin Films for Flexible Electrochromic Devices DOI: 10.1143/JJAP.51.01AC03(Journal) (6693550-N) DOI: 10.7567/JJAP.51.01AC03(Journal) ========================================================== Created: 2023-01-05 12:30:54 ConfID: 6693551 CauseID: 1557140395 OtherID: 1363320468 JT: Japanese Journal of Applied Physics MD: Zhang,51,2s,208,2012,Channel Formation as an Interface Charging Process in a Pentacene Field Effect Transistor Investigated by Time-Resolved Second Harmonic Generation and Impedance Spectroscopy DOI: 10.1143/JJAP.51.02BK08(Journal) (6693551-N) DOI: 10.7567/JJAP.51.02BK08(Journal) ========================================================== Created: 2023-01-05 12:30:45 ConfID: 6693548 CauseID: 1557140378 OtherID: 1363320187 JT: Japanese Journal of Applied Physics MD: Zhou,51,1r,16401,2012,Calculation of Coherent Synchrotron Radiation Impedance for a Beam Moving in a Curved Trajectory DOI: 10.1143/JJAP.51.016401(Journal) (6693548-N) DOI: 10.7567/JJAP.51.016401(Journal) ========================================================== Created: 2023-01-05 12:30:46 ConfID: 6693549 CauseID: 1557140379 OtherID: 1363320408 JT: Japanese Journal of Applied Physics MD: Ahn,51,2s,206,2012,Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory DOI: 10.1143/JJAP.51.02BD06(Journal) (6693549-N) DOI: 10.7567/JJAP.51.02BD06(Journal) ========================================================== Created: 2023-01-05 12:30:41 ConfID: 6693546 CauseID: 1557140368 OtherID: 1363320168 JT: Japanese Journal of Applied Physics MD: Itoh,51,1r,15801,2012,Improvement of Electromagnetic Wave Absorption Ability by Reducing Impedance Oscillation Characteristics DOI: 10.1143/JJAP.51.015801(Journal) (6693546-N) DOI: 10.7567/JJAP.51.015801(Journal) ========================================================== Created: 2023-01-05 12:30:43 ConfID: 6693547 CauseID: 1557140371 OtherID: 1363320238 JT: Japanese Journal of Applied Physics MD: Jin,51,1s,108,2012,Plasma-Enhanced Surface Modification of Sprayed Carbon Nanotube Electrodes for Lithographically Integrated Biosensing System DOI: 10.1143/JJAP.51.01AJ08(Journal) (6693547-N) DOI: 10.7567/JJAP.51.01AJ08(Journal) ========================================================== Created: 2023-01-05 12:30:41 ConfID: 6693544 CauseID: 1557140367 OtherID: 1363320199 JT: Japanese Journal of Applied Physics MD: Sonoda,51,1s,106,2012,Preparation of MAX-Phase-Containing Ti–Si–C Thin Films by Magnetron Sputtering Using Elemental Targets DOI: 10.1143/JJAP.51.01AC06(Journal) (6693544-N) DOI: 10.7567/JJAP.51.01AC06(Journal) ========================================================== Created: 2023-01-05 12:30:42 ConfID: 6693545 CauseID: 1557140369 OtherID: 1363320407 JT: Japanese Journal of Applied Physics MD: Chen,51,2s,210,2012,Simulation of Retention Behavior for the Phase Change Memory DOI: 10.1143/JJAP.51.02BD10(Journal) (6693545-N) DOI: 10.7567/JJAP.51.02BD10(Journal) ========================================================== Created: 2023-01-05 12:31:01 ConfID: 6693558 CauseID: 1557140427 OtherID: 1363320216 JT: Japanese Journal of Applied Physics MD: Koga,51,1s,102,2012,Combinatorial Deposition of Microcrystalline Silicon Films Using Multihollow Discharge Plasma Chemical Vapor Deposition DOI: 10.1143/JJAP.51.01AD02(Journal) (6693558-N) DOI: 10.7567/JJAP.51.01AD02(Journal) ========================================================== Created: 2023-01-05 12:31:02 ConfID: 6693559 CauseID: 1557140428 OtherID: 1363320409 JT: Japanese Journal of Applied Physics MD: Gyanathan,51,2s,208,2012,Multi-Level Phase Change Memory Cells with SiN or Ta2O5 Barrier Layers DOI: 10.1143/JJAP.51.02BD08(Journal) (6693559-N) DOI: 10.7567/JJAP.51.02BD08(Journal) ========================================================== Created: 2023-01-05 12:30:59 ConfID: 6693556 CauseID: 1557140412 OtherID: 1363320406 JT: Japanese Journal of Applied Physics MD: Beppu,51,2s,215,2012,Impact of Gate Poly Depletion on Evaluation of Channel Temperature in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with Four-Point Gate Resistance Measurement Method DOI: 10.1143/JJAP.51.02BC15(Journal) (6693556-N) DOI: 10.7567/JJAP.51.02BC15(Journal) ========================================================== Created: 2023-01-05 12:30:56 ConfID: 6693557 CauseID: 1557140414 OtherID: 1363320231 JT: Japanese Journal of Applied Physics MD: Aryal,51,1s,105,2012,Epitaxial Graphene on Si(111) Substrate Grown by Annealing 3C-SiC/Carbonized Silicon DOI: 10.1143/JJAP.51.01AH05(Journal) (6693557-N) DOI: 10.7567/JJAP.51.01AH05(Journal) ========================================================== Created: 2023-01-05 12:30:55 ConfID: 6693554 CauseID: 1557140406 OtherID: 1363320191 JT: Japanese Journal of Applied Physics MD: Yamauchi,51,1s,102,2012,Radio Frequency Plasma Transition Caused by Gas Puffing and/or Direct Current Biasing Using Multiturn Internal Antenna DOI: 10.1143/JJAP.51.01AA02(Journal) (6693554-N) DOI: 10.7567/JJAP.51.01AA02(Journal) ========================================================== Created: 2023-01-05 12:30:59 ConfID: 6693555 CauseID: 1557140411 OtherID: 1363320437 JT: Japanese Journal of Applied Physics MD: Okamoto,51,2s,205,2012,Characteristics of 4H-SiC n- and p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Ion-Implanted Buried Channel DOI: 10.1143/JJAP.51.02BF05(Journal) (6693555-N) DOI: 10.7567/JJAP.51.02BF05(Journal) ========================================================== Created: 2023-01-05 12:30:50 ConfID: 6693552 CauseID: 1557140398 OtherID: 1363320371 JT: Japanese Journal of Applied Physics MD: Kosemura,51,2s,203,2012,Evaluation of Anisotropic Strain Relaxation in Strained Silicon-on-Insulator Nanostructure by Oil-Immersion Raman Spectroscopy DOI: 10.1143/JJAP.51.02BA03(Journal) (6693552-N) DOI: 10.7567/JJAP.51.02BA03(Journal) ========================================================== Created: 2023-01-05 12:30:52 ConfID: 6693553 CauseID: 1557140401 OtherID: 1363320443 JT: Japanese Journal of Applied Physics MD: Amaha,51,2s,206,2012,Series-Coupled Triple Quantum Dot Molecules DOI: 10.1143/JJAP.51.02BJ06(Journal) (6693553-N) DOI: 10.7567/JJAP.51.02BJ06(Journal) ========================================================== Created: 2023-01-05 12:31:16 ConfID: 6693566 CauseID: 1557140468 OtherID: 1363320222 JT: Japanese Journal of Applied Physics MD: Robertson,51,1s,101,2012,Applications of Carbon Nanotubes Grown by Chemical Vapor Deposition DOI: 10.1143/JJAP.51.01AH01(Journal) (6693566-N) DOI: 10.7567/JJAP.51.01AH01(Journal) ========================================================== Created: 2023-01-05 12:31:16 ConfID: 6693567 CauseID: 1557140467 OtherID: 1363320396 JT: Japanese Journal of Applied Physics MD: Mao,51,2s,206,2012,Suppression of Within-Device Variability in Intrinsic Channel Tri-Gate Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.51.02BC06(Journal) (6693567-N) DOI: 10.7567/JJAP.51.02BC06(Journal) ========================================================== Created: 2023-01-05 12:31:15 ConfID: 6693564 CauseID: 1557140462 OtherID: 1363320507 JT: Japanese Journal of Applied Physics MD: Bouzazi,51,2s,202,2012,Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy DOI: 10.1143/JJAP.51.02BP02(Journal) (6693564-N) DOI: 10.7567/JJAP.51.02BP02(Journal) ========================================================== Created: 2023-01-05 12:31:18 ConfID: 6693565 CauseID: 1557140464 OtherID: 1363320230 JT: Japanese Journal of Applied Physics MD: Wang,51,1s,102,2012,Fabrication and Electrochemical Characterization of Carbon Nanosheets by Microwave Plasma-Enhanced Chemical Vapor Deposition DOI: 10.1143/JJAP.51.01AH02(Journal) (6693565-N) DOI: 10.7567/JJAP.51.01AH02(Journal) ========================================================== Created: 2023-01-05 12:31:10 ConfID: 6693562 CauseID: 1557140454 OtherID: 1363320229 JT: Japanese Journal of Applied Physics MD: Hirama,51,1s,109,2012,Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate DOI: 10.1143/JJAP.51.01AG09(Journal) (6693562-N) DOI: 10.7567/JJAP.51.01AG09(Journal) ========================================================== Created: 2023-01-05 12:31:13 ConfID: 6693563 CauseID: 1557140451 OtherID: 1363320447 JT: Japanese Journal of Applied Physics MD: Yamamoto,51,2s,208,2012,Characterization of Wavelength-Tunable Quantum Dot External Cavity Laser for 1.3-µm-Waveband Coherent Light Sources DOI: 10.1143/JJAP.51.02BG08(Journal) (6693563-N) DOI: 10.7567/JJAP.51.02BG08(Journal) ========================================================== Created: 2023-01-05 12:31:03 ConfID: 6693560 CauseID: 1557140429 OtherID: 1363320235 JT: Japanese Journal of Applied Physics MD: Lin,51,1s,105,2012,Enhancement of Light Extraction Efficiency of InGaN Light-Emitting Diodes with an Air-Hole-Array Structure DOI: 10.1143/JJAP.51.01AG05(Journal) (6693560-N) DOI: 10.7567/JJAP.51.01AG05(Journal) ========================================================== Created: 2023-01-05 12:31:09 ConfID: 6693561 CauseID: 1557140436 OtherID: 1363320236 JT: Japanese Journal of Applied Physics MD: Lee,51,1s,106,2012,Nonphosphor White Light Emitting Diodes by Mixed-Source Hydride Vapor Phase Epitaxy DOI: 10.1143/JJAP.51.01AG06(Journal) (6693561-N) DOI: 10.7567/JJAP.51.01AG06(Journal) ========================================================== Created: 2023-01-05 12:29:41 ConfID: 6693510 CauseID: 1557140177 OtherID: 1363320203 JT: Japanese Journal of Applied Physics MD: Niibe,51,1s,102,2012,Damage Analysis of Plasma-Etched n-GaN Crystal Surface by Nitrogen K Near-Edge X-ray Absorption Fine Structure Spectroscopy DOI: 10.1143/JJAP.51.01AB02(Journal) (6693510-N) DOI: 10.7567/JJAP.51.01AB02(Journal) ========================================================== Created: 2023-01-05 12:29:43 ConfID: 6693511 CauseID: 1557140181 OtherID: 1363320175 JT: Japanese Journal of Applied Physics MD: Kishii,51,1r,16501,2012,Dielectric SiO2 Planarization Using MnO2 Slurry DOI: 10.1143/JJAP.51.016501(Journal) (6693511-N) DOI: 10.7567/JJAP.51.016501(Journal) ========================================================== Created: 2023-01-05 12:29:38 ConfID: 6693508 CauseID: 1557140165 OtherID: 1363323039 JT: Japanese Journal of Applied Physics MD: Mizuno,50,12r,128002,2011,Photoluminescence of ZnS–SiO2:Ce Thin Films Deposited by Magnetron Sputtering DOI: 10.1143/JJAP.50.128002(Journal) (6693508-N) DOI: 10.7567/JJAP.50.128002(Journal) ========================================================== Created: 2023-01-05 12:29:41 ConfID: 6693509 CauseID: 1557140178 OtherID: 1363320154 JT: Japanese Journal of Applied Physics MD: Lee,51,1r,11802,2012,The Role of Rare Earth Metals on Effective Work Function Modulation of Nickel Fully-Silicided Gate/High-k Dielectric Stacks for n-Channel Metal Oxide Semiconductor Device Applications DOI: 10.1143/JJAP.51.011802(Journal) (6693509-N) DOI: 10.7567/JJAP.51.011802(Journal) ========================================================== Created: 2023-01-05 12:29:35 ConfID: 6693506 CauseID: 1557140158 OtherID: 1363320125 JT: Japanese Journal of Applied Physics MD: Suzuki,51,1r,10112,2012,Short-Pulse Intrinsic Tunneling Spectroscopy in Bi2Sr2CaCu2O8+δ under Suppressed Self Heating DOI: 10.1143/JJAP.51.010112(Journal) (6693506-N) DOI: 10.7567/JJAP.51.010112(Journal) ========================================================== Created: 2023-01-05 12:29:37 ConfID: 6693507 CauseID: 1557140164 OtherID: 1363320113 JT: Japanese Journal of Applied Physics MD: Shiohara,51,1r,10007,2012,Overview of Materials and Power Applications of Coated Conductors Project DOI: 10.1143/JJAP.51.010007(Journal) (6693507-N) DOI: 10.7567/JJAP.51.010007(Journal) ========================================================== Created: 2023-01-05 12:29:32 ConfID: 6693504 CauseID: 1557140151 OtherID: 1363323048 JT: Japanese Journal of Applied Physics MD: Wu,50,12r,125803,2011,Preparation, Structure, and Magnetic Properties of Nd–Y–Fe–Mo–B Nanocomposite Ribbon and Bulk Magnets DOI: 10.1143/JJAP.50.125803(Journal) (6693504-N) DOI: 10.7567/JJAP.50.125803(Journal) ========================================================== Created: 2023-01-05 12:29:33 ConfID: 6693505 CauseID: 1557140152 OtherID: 1363320221 JT: Japanese Journal of Applied Physics MD: Koga,51,1s,103,2012,Deposition of Cluster-Free B-doped Hydrogenated Amorphous Silicon Films Using SiH4+B10H14 Multi-Hollow Discharge Plasma Chemical Vapor Deposition DOI: 10.1143/JJAP.51.01AD03(Journal) (6693505-N) DOI: 10.7567/JJAP.51.01AD03(Journal) ========================================================== Created: 2023-01-05 12:30:04 ConfID: 6693518 CauseID: 1557140229 OtherID: 1363320220 JT: Japanese Journal of Applied Physics MD: Uchida,51,1s,101,2012,Effect of Nitridation of Si Nanoparticles on the Performance of Quantum-Dot Sensitized Solar Cells DOI: 10.1143/JJAP.51.01AD01(Journal) (6693518-N) DOI: 10.7567/JJAP.51.01AD01(Journal) ========================================================== Created: 2023-01-05 12:30:01 ConfID: 6693519 CauseID: 1557140231 OtherID: 1363323038 JT: Japanese Journal of Applied Physics MD: Goto,50,12r,126701,2011,Optical-Pumping Double-Nuclear-Magnetic-Resonance System with a Gifford–McMahon Cryocooler DOI: 10.1143/JJAP.50.126701(Journal) (6693519-N) DOI: 10.7567/JJAP.50.126701(Journal) ========================================================== Created: 2023-01-05 12:30:00 ConfID: 6693516 CauseID: 1557140227 OtherID: 1363320142 JT: Japanese Journal of Applied Physics MD: Son,51,1r,12202,2012,Wide-Range Refractometric Sensor Using Differently Sensitive Y-Branched Waveguides DOI: 10.1143/JJAP.51.012202(Journal) (6693516-N) DOI: 10.7567/JJAP.51.012202(Journal) ========================================================== Created: 2023-01-05 12:30:04 ConfID: 6693517 CauseID: 1557140228 OtherID: 1363320201 JT: Japanese Journal of Applied Physics MD: Saito,51,1s,105,2012,Anisotropic Bond Orientation of Amorphous Carbon by Deposition DOI: 10.1143/JJAP.51.01AC05(Journal) (6693517-N) DOI: 10.7567/JJAP.51.01AC05(Journal) ========================================================== Created: 2023-01-05 12:29:56 ConfID: 6693514 CauseID: 1557140222 OtherID: 1363320114 JT: Japanese Journal of Applied Physics MD: Sato,51,1r,10006,2012,Present Status and Future Perspective of Bismuth-Based High-Temperature Superconducting Wires Realizing Application Systems DOI: 10.1143/JJAP.51.010006(Journal) (6693514-N) DOI: 10.7567/JJAP.51.010006(Journal) ========================================================== Created: 2023-01-05 12:29:57 ConfID: 6693515 CauseID: 1557140223 OtherID: 1363320172 JT: Japanese Journal of Applied Physics MD: Yamamoto,51,1r,16202,2012,Feature Profiles on Plasma Etch of Organic Films by a Temporal Control of Radical Densities and Real-Time Monitoring of Substrate Temperature DOI: 10.1143/JJAP.51.016202(Journal) (6693515-N) DOI: 10.7567/JJAP.51.016202(Journal) ========================================================== Created: 2023-01-05 12:29:48 ConfID: 6693512 CauseID: 1557140189 OtherID: 1363320452 JT: Japanese Journal of Applied Physics MD: Majid,51,2s,209,2012,Effect of Deposition Temperature on the Opto-Electronic Properties of Molecular Beam Epitaxy Grown InAs Quantum Dot Devices for Broadband Applications DOI: 10.1143/JJAP.51.02BG09(Journal) (6693512-N) DOI: 10.7567/JJAP.51.02BG09(Journal) ========================================================== Created: 2023-01-05 12:29:46 ConfID: 6693513 CauseID: 1557140194 OtherID: 1363320156 JT: Japanese Journal of Applied Physics MD: Tsukada,51,1r,15701,2012,Changes in Work Function and Electrical Resistance of Pt Thin Films in the Presence of Hydrogen Gas DOI: 10.1143/JJAP.51.015701(Journal) (6693513-N) DOI: 10.7567/JJAP.51.015701(Journal) ========================================================== Created: 2023-01-05 12:30:18 ConfID: 6693526 CauseID: 1557140276 OtherID: 1363320206 JT: Japanese Journal of Applied Physics MD: Kawamura,51,1s,106,2012,Investigation of GaN Solution Growth Processes on Ga- and N-Faces by Molecular Dynamics Simulation DOI: 10.1143/JJAP.51.01AF06(Journal) (6693526-N) DOI: 10.7567/JJAP.51.01AF06(Journal) ========================================================== Created: 2023-01-05 12:30:10 ConfID: 6693527 CauseID: 1557140258 OtherID: 1363320214 JT: Japanese Journal of Applied Physics MD: Butcher,51,1s,102,2012,Gallium Nitride Film Growth Using a Plasma Based Migration Enhanced Afterglow Chemical Vapor Deposition System DOI: 10.1143/JJAP.51.01AF02(Journal) (6693527-N) DOI: 10.7567/JJAP.51.01AF02(Journal) ========================================================== Created: 2023-01-05 12:30:11 ConfID: 6693524 CauseID: 1557140260 OtherID: 1363320211 JT: Japanese Journal of Applied Physics MD: Zhu,51,1s,102,2012,Characterization of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate DOI: 10.1143/JJAP.51.01AG02(Journal) (6693524-N) DOI: 10.7567/JJAP.51.01AG02(Journal) ========================================================== Created: 2023-01-05 12:30:12 ConfID: 6693525 CauseID: 1557140262 OtherID: 1363320153 JT: Japanese Journal of Applied Physics MD: Asai,51,1r,11801,2012,Application of AuSn Adjusting Layer for a Novel Ohmic Back Metal for n-Type Si Devices DOI: 10.1143/JJAP.51.011801(Journal) (6693525-N) DOI: 10.7567/JJAP.51.011801(Journal) ========================================================== Created: 2023-01-05 12:30:05 ConfID: 6693522 CauseID: 1557140245 OtherID: 1363320210 JT: Japanese Journal of Applied Physics MD: Kitazaki,51,1s,101,2012,Growth Enhancement of Radish Sprouts Induced by Low Pressure O2 Radio Frequency Discharge Plasma Irradiation DOI: 10.1143/JJAP.51.01AE01(Journal) (6693522-N) DOI: 10.7567/JJAP.51.01AE01(Journal) ========================================================== Created: 2023-01-05 12:30:06 ConfID: 6693523 CauseID: 1557140246 OtherID: 1363320250 JT: Japanese Journal of Applied Physics MD: Ishikawa,51,1s,102,2012,White Photoluminescence from Carbon-Incorporated Silica Fabricated from Rice Husk DOI: 10.1143/JJAP.51.01AK02(Journal) (6693523-N) DOI: 10.7567/JJAP.51.01AK02(Journal) ========================================================== Created: 2023-01-05 12:30:03 ConfID: 6693520 CauseID: 1557140233 OtherID: 1363320178 JT: Japanese Journal of Applied Physics MD: Satoh,51,1r,16603,2012,Mechanical Stress Evaluation of Si Metal–Oxide–Semiconductor Field-Effect Transistor Structure Using Polarized Ultraviolet Raman Spectroscopy Measurements and Calibrated Technology-Computer-Aided-Design Simulations DOI: 10.1143/JJAP.51.016603(Journal) (6693520-N) DOI: 10.7567/JJAP.51.016603(Journal) ========================================================== Created: 2023-01-05 12:30:05 ConfID: 6693521 CauseID: 1557140239 OtherID: 1363320139 JT: Japanese Journal of Applied Physics MD: Nakano,51,1r,11701,2012,Charge Injection Enhanced by Guest Material in Molecularly Doped Liquid Crystalline Thin Films DOI: 10.1143/JJAP.51.011701(Journal) (6693521-N) DOI: 10.7567/JJAP.51.011701(Journal) ========================================================== Created: 2023-01-05 12:30:25 ConfID: 6693534 CauseID: 1557140312 OtherID: 1363320242 JT: Japanese Journal of Applied Physics MD: Sato,51,1s,101,2012,Effects of Dispersoids on Wear Behavior of Cu-Based Nanocomposite Containing SiO2 Nanoparticles DOI: 10.1143/JJAP.51.01AK01(Journal) (6693534-N) DOI: 10.7567/JJAP.51.01AK01(Journal) ========================================================== Created: 2023-01-05 12:30:29 ConfID: 6693535 CauseID: 1557140316 OtherID: 1363320173 JT: Japanese Journal of Applied Physics MD: Akazawa,51,1r,15803,2012,Transparent Conductive Properties of TiOx and Nb-Doped TiOx Films Produced by Reactive Co-Sputtering from Ti and Nb2O5 Targets DOI: 10.1143/JJAP.51.015803(Journal) (6693535-N) DOI: 10.7567/JJAP.51.015803(Journal) ========================================================== Created: 2023-01-05 12:30:20 ConfID: 6693532 CauseID: 1557140295 OtherID: 1363320124 JT: Japanese Journal of Applied Physics MD: Matsushita,51,1r,10111,2012,Longitudinal Magnetic Field Effect in Superconductors DOI: 10.1143/JJAP.51.010111(Journal) (6693532-N) DOI: 10.7567/JJAP.51.010111(Journal) ========================================================== Created: 2023-01-05 12:30:23 ConfID: 6693533 CauseID: 1557140297 OtherID: 1363320163 JT: Japanese Journal of Applied Physics MD: Nishimura,51,1r,15102,2012,Thermal Conductance of Buckled Carbon Nanotubes DOI: 10.1143/JJAP.51.015102(Journal) (6693533-N) DOI: 10.7567/JJAP.51.015102(Journal) ========================================================== Created: 2023-01-05 12:30:17 ConfID: 6693530 CauseID: 1557140283 OtherID: 1363320170 JT: Japanese Journal of Applied Physics MD: Stryganyuk,51,1r,16602,2012,Spin Polarimetry and Magnetic Dichroism on a Buried Magnetic Layer Using Hard X-ray Photoelectron Spectroscopy DOI: 10.1143/JJAP.51.016602(Journal) (6693530-N) DOI: 10.7567/JJAP.51.016602(Journal) ========================================================== Created: 2023-01-05 12:30:17 ConfID: 6693531 CauseID: 1557140284 OtherID: 1363320122 JT: Japanese Journal of Applied Physics MD: Yoshizaki,51,1r,10108,2012,Theory of Proximity Effect in Ferromagnet/Superconductor Heterostructures in the Presence of Spin Dependent Interfacial Phase Shift DOI: 10.1143/JJAP.51.010108(Journal) (6693531-N) DOI: 10.7567/JJAP.51.010108(Journal) ========================================================== Created: 2023-01-05 12:30:18 ConfID: 6693528 CauseID: 1557140277 OtherID: 1363320245 JT: Japanese Journal of Applied Physics MD: Jamian,51,1s,104,2012,Experimental Study on Severe Plastic Deformation of Ti by Novel Equal-Channel Angular Pressing DOI: 10.1143/JJAP.51.01AK04(Journal) (6693528-N) DOI: 10.7567/JJAP.51.01AK04(Journal) ========================================================== Created: 2023-01-05 12:30:16 ConfID: 6693529 CauseID: 1557140282 OtherID: 1363320136 JT: Japanese Journal of Applied Physics MD: Takahashi,51,1r,10110,2012,Spin Hall Effect in Superconductors DOI: 10.1143/JJAP.51.010110(Journal) (6693529-N) DOI: 10.7567/JJAP.51.010110(Journal) ========================================================== Created: 2023-01-05 12:36:52 ConfID: 6693734 CauseID: 1557141313 OtherID: 1363320500 JT: Japanese Journal of Applied Physics MD: Kato,51,2s,212,2012,Estimation of Surface Recombination Velocity from Thickness Dependence of Carrier Lifetime in n-Type 4H-SiC Epilayers DOI: 10.1143/JJAP.51.02BP12(Journal) (6693734-N) DOI: 10.7567/JJAP.51.02BP12(Journal) ========================================================== Created: 2023-01-05 12:36:55 ConfID: 6693735 CauseID: 1557141318 OtherID: 1363321737 JT: Japanese Journal of Applied Physics MD: Yotsuhashi,51,2s,207,2012,CO2 Conversion with Light and Water by GaN Photoelectrode DOI: 10.1143/JJAP.51.02BP07(Journal) (6693735-N) DOI: 10.7567/JJAP.51.02BP07(Journal) ========================================================== Created: 2023-01-05 12:36:47 ConfID: 6693728 CauseID: 1557141302 OtherID: 1363320487 JT: Japanese Journal of Applied Physics MD: Kumagai,51,2s,204,2012,Photoresist Spray Coating Using a Shield Plate with an Aperture for Uniform Deposition onto Trench-Type Three-Dimensional Microdevice Structures DOI: 10.1143/JJAP.51.02BL04(Journal) (6693728-N) DOI: 10.7567/JJAP.51.02BL04(Journal) ========================================================== Created: 2023-01-05 12:36:48 ConfID: 6693729 CauseID: 1557141303 OtherID: 1363323320 JT: Japanese Journal of Applied Physics MD: Kim,50,2r,24104,2011,Effect of Channel Layer Thickness on Characteristics and Stability of Amorphous Hafnium–Indium–Zinc Oxide Thin Film Transistors DOI: 10.1143/JJAP.50.024104(Journal) (6693729-N) DOI: 10.7567/JJAP.50.024104(Journal) ========================================================== Created: 2023-01-05 12:37:35 ConfID: 6693742 CauseID: 1557141393 OtherID: 1363323312 JT: Japanese Journal of Applied Physics MD: Shih,50,2r,24202,2011,Design Considerations of Nanoscale Schottky Barrier Flash Memory with Source-Side Injection Programming DOI: 10.1143/JJAP.50.024202(Journal) (6693742-N) DOI: 10.7567/JJAP.50.024202(Journal) ========================================================== Created: 2023-01-05 12:37:36 ConfID: 6693743 CauseID: 1557141398 OtherID: 1363323267 JT: Japanese Journal of Applied Physics MD: Jun,50,2r,20214,2011,New Method of Evaluating the Crystallization Activation Energy of Ge2Sb2Te5 by In situ Resistance Measurement DOI: 10.1143/JJAP.50.020214(Journal) (6693743-N) DOI: 10.7567/JJAP.50.020214(Journal) ========================================================== Created: 2023-01-05 12:37:28 ConfID: 6693740 CauseID: 1557141379 OtherID: 1363323288 JT: Japanese Journal of Applied Physics MD: Venkatesh,50,2r,21501,2011,Correlation Between Tolerance Factor and Temperature Coefficient of Dielectric Constant of (Ba,Sr)(Zn1/3Ta2/3)O3 Dielectric Resonator DOI: 10.1143/JJAP.50.021501(Journal) (6693740-N) DOI: 10.7567/JJAP.50.021501(Journal) ========================================================== Created: 2023-01-05 12:37:28 ConfID: 6693741 CauseID: 1557141380 OtherID: 1363323295 JT: Japanese Journal of Applied Physics MD: Kaneto,50,2r,21603,2011,Shape Retention in Polyaniline Artificial Muscles DOI: 10.1143/JJAP.50.021603(Journal) (6693741-N) DOI: 10.7567/JJAP.50.021603(Journal) ========================================================== Created: 2023-01-05 12:37:06 ConfID: 6693738 CauseID: 1557141336 OtherID: 1363321734 JT: Japanese Journal of Applied Physics MD: Mohan,51,2s,211,2012,Hydrothermal Synthesis of TiO2 Porous Hollow Nanospheres for Coating on the Photoelectrode of Dye-Sensitized Solar Cells DOI: 10.1143/JJAP.51.02BP11(Journal) (6693738-N) DOI: 10.7567/JJAP.51.02BP11(Journal) ========================================================== Created: 2023-01-05 12:37:19 ConfID: 6693739 CauseID: 1557141362 OtherID: 1363323277 JT: Japanese Journal of Applied Physics MD: Piao,50,2r,20204,2011,Ultrasonic Spray-Assisted Solution-Based Vapor-Deposition of Aluminum Tris(8-hydroxyquinoline) Thin Films DOI: 10.1143/JJAP.50.020204(Journal) (6693739-N) DOI: 10.7567/JJAP.50.020204(Journal) ========================================================== Created: 2023-01-05 12:37:51 ConfID: 6693750 CauseID: 1557141434 OtherID: 1363323287 JT: Japanese Journal of Applied Physics MD: Kwon,50,2r,22501,2011,Bending Effects of Thermally-Expanded-Core Fiber and Its Application as Variable Optical Attenuator DOI: 10.1143/JJAP.50.022501(Journal) (6693750-N) DOI: 10.7567/JJAP.50.022501(Journal) ========================================================== Created: 2023-01-05 12:37:59 ConfID: 6693751 CauseID: 1557141447 OtherID: 1363323303 JT: Japanese Journal of Applied Physics MD: Iwai,50,2r,22702,2011,Surface and Interface Modifications of Aluminum Thin Films on Silica Glass Substrate Using 157 nm F2 Laser for Selective Metallization DOI: 10.1143/JJAP.50.022702(Journal) (6693751-N) DOI: 10.7567/JJAP.50.022702(Journal) ========================================================== Created: 2023-01-05 12:37:54 ConfID: 6693748 CauseID: 1557141432 OtherID: 1363323464 JT: Japanese Journal of Applied Physics MD: Choi,50,3s,302,2011,Novel Multiple-Channel Polycrystalline Silicon Thin-Film Transistors Employing Asymmetric Spacing DOI: 10.1143/JJAP.50.03CB02(Journal) (6693748-N) DOI: 10.7567/JJAP.50.03CB02(Journal) ========================================================== Created: 2023-01-05 12:37:50 ConfID: 6693749 CauseID: 1557141433 OtherID: 1363323330 JT: Japanese Journal of Applied Physics MD: Takano,50,2r,25601,2011,Sublattice Rotation of GaP Grown on 2°-Misoriented Si Substrate Using Metalorganic Vapor Phase Epitaxy DOI: 10.1143/JJAP.50.025601(Journal) (6693749-N) DOI: 10.7567/JJAP.50.025601(Journal) ========================================================== Created: 2023-01-05 12:37:42 ConfID: 6693746 CauseID: 1557141413 OtherID: 1363323266 JT: Japanese Journal of Applied Physics MD: Hatakeyama,50,2r,20210,2011,High Reliability of High-Speed Vertical-Cavity Surface-Emitting Lasers with Silicone-Encapsulated Structure and Parallel Optical Transmitter Modules DOI: 10.1143/JJAP.50.020210(Journal) (6693746-N) DOI: 10.7567/JJAP.50.020210(Journal) ========================================================== Created: 2023-01-05 12:37:45 ConfID: 6693747 CauseID: 1557141420 OtherID: 1363323326 JT: Japanese Journal of Applied Physics MD: Kyung,50,2r,25602,2011,Nanoscale Texture Control of Polyelectrolyte Multilayer Using Spray Layer-by-Layer Method DOI: 10.1143/JJAP.50.025602(Journal) (6693747-N) DOI: 10.7567/JJAP.50.025602(Journal) ========================================================== Created: 2023-01-05 12:37:38 ConfID: 6693744 CauseID: 1557141400 OtherID: 1363323305 JT: Japanese Journal of Applied Physics MD: Tsai,50,2r,22301,2011,Efficiency Improvement of Organic Solar Cells by Slow Growth and Changing Spin-Coating Parameters for Active Layers DOI: 10.1143/JJAP.50.022301(Journal) (6693744-N) DOI: 10.7567/JJAP.50.022301(Journal) ========================================================== Created: 2023-01-05 12:37:44 ConfID: 6693745 CauseID: 1557141410 OtherID: 1363323327 JT: Japanese Journal of Applied Physics MD: Matsushita,50,2r,25501,2011,Synthesis of a Nitrogen-Doped TiO2 (Rutile) Single Crystal and Its p-Type Behaviors DOI: 10.1143/JJAP.50.025501(Journal) (6693745-N) DOI: 10.7567/JJAP.50.025501(Journal) ========================================================== Created: 2023-01-05 12:38:09 ConfID: 6693758 CauseID: 1557141478 OtherID: 1363323319 JT: Japanese Journal of Applied Physics MD: Habuka,50,2r,25701,2011,Silicon Surface Morphology after Annealing in Ambient Hydrogen Containing a Trace Amount of Hydrogen Halide Gas DOI: 10.1143/JJAP.50.025701(Journal) (6693758-N) DOI: 10.7567/JJAP.50.025701(Journal) ========================================================== Created: 2023-01-05 12:38:11 ConfID: 6693759 CauseID: 1557141484 OtherID: 1363323470 JT: Japanese Journal of Applied Physics MD: Lee,50,3s,303,2011,Flexibility of Low Temperature Polycrystalline Silicon Thin-Film Transistor on Tungsten Foil DOI: 10.1143/JJAP.50.03CB03(Journal) (6693759-N) DOI: 10.7567/JJAP.50.03CB03(Journal) ========================================================== Created: 2023-01-05 12:38:05 ConfID: 6693756 CauseID: 1557141471 OtherID: 1363323469 JT: Japanese Journal of Applied Physics MD: Pribat,50,3s,301,2011,Carbon Nanotubes, Semiconductor Nanowires and Graphene for Thin Film Transistor and Circuit Applications DOI: 10.1143/JJAP.50.03CA01(Journal) (6693756-N) DOI: 10.7567/JJAP.50.03CA01(Journal) ========================================================== Created: 2023-01-05 12:38:07 ConfID: 6693757 CauseID: 1557141475 OtherID: 1363323482 JT: Japanese Journal of Applied Physics MD: Sameshima,50,3s,302,2011,Minority Carrier Lifetime Measurements by Photoinduced Carrier Microwave Absorption Method DOI: 10.1143/JJAP.50.03CA02(Journal) (6693757-N) DOI: 10.7567/JJAP.50.03CA02(Journal) ========================================================== Created: 2023-01-05 12:38:03 ConfID: 6693754 CauseID: 1557141462 OtherID: 1363323291 JT: Japanese Journal of Applied Physics MD: Seo,50,2r,24103,2011,A 128×96 Pixel Stack-Type Color Image Sensor: Stack of Individual Blue-, Green-, and Red-Sensitive Organic Photoconductive Films Integrated with a ZnO Thin Film Transistor Readout Circuit DOI: 10.1143/JJAP.50.024103(Journal) (6693754-N) DOI: 10.7567/JJAP.50.024103(Journal) ========================================================== Created: 2023-01-05 12:38:04 ConfID: 6693755 CauseID: 1557141464 OtherID: 1363323313 JT: Japanese Journal of Applied Physics MD: Tian,50,2r,25801,2011,Fabrication of BaTiO3-Based Dielectrics for Ultrathin-Layer Multilayer Ceramic Capacitor Application by a Modified Coating Approach DOI: 10.1143/JJAP.50.025801(Journal) (6693755-N) DOI: 10.7567/JJAP.50.025801(Journal) ========================================================== Created: 2023-01-05 12:37:43 ConfID: 6693752 CauseID: 1557141415 OtherID: 1363323280 JT: Japanese Journal of Applied Physics MD: Khatri,50,2r,20213,2011,Simultaneous Formation of Both Single- and Multi-Wall Carbon Nanotubes by Ultrasonic Spray Pyrolysis DOI: 10.1143/JJAP.50.020213(Journal) (6693752-N) DOI: 10.7567/JJAP.50.020213(Journal) ========================================================== Created: 2023-01-05 12:38:00 ConfID: 6693753 CauseID: 1557141458 OtherID: 1363323481 JT: Japanese Journal of Applied Physics MD: Higashi,50,3s,310,2011,Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication DOI: 10.1143/JJAP.50.03CB10(Journal) (6693753-N) DOI: 10.7567/JJAP.50.03CB10(Journal) ========================================================== Created: 2023-01-05 12:35:46 ConfID: 6693702 CauseID: 1557141157 OtherID: 1363320438 JT: Japanese Journal of Applied Physics MD: Kudo,51,2s,207,2012,Fabrication and Analysis of AlN/GaAs(001) and AlN/Ge/GaAs(001) Metal–Insulator–Semiconductor Structures DOI: 10.1143/JJAP.51.02BF07(Journal) (6693702-N) DOI: 10.7567/JJAP.51.02BF07(Journal) ========================================================== Created: 2023-01-05 12:35:47 ConfID: 6693703 CauseID: 1557141160 OtherID: 1363321733 JT: Japanese Journal of Applied Physics MD: Okada,51,2s,205,2012,Electronic Structure of Corrugated Graphene Sheet DOI: 10.1143/JJAP.51.02BN05(Journal) (6693703-N) DOI: 10.7567/JJAP.51.02BN05(Journal) ========================================================== Created: 2023-01-05 12:35:36 ConfID: 6693700 CauseID: 1557141136 OtherID: 1363320414 JT: Japanese Journal of Applied Physics MD: Togashi,51,2s,207,2012,Nonvolatile Low Power 16-bit/32-bit Magnetic Tunnel Junction Based Binary Counter and Its Scaling DOI: 10.1143/JJAP.51.02BE07(Journal) (6693700-N) DOI: 10.7567/JJAP.51.02BE07(Journal) ========================================================== Created: 2023-01-05 12:35:38 ConfID: 6693701 CauseID: 1557141139 OtherID: 1363320480 JT: Japanese Journal of Applied Physics MD: Tanabe,51,2s,202,2012,Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001) DOI: 10.1143/JJAP.51.02BN02(Journal) (6693701-N) DOI: 10.7567/JJAP.51.02BN02(Journal) ========================================================== Created: 2023-01-05 12:35:34 ConfID: 6693698 CauseID: 1557141128 OtherID: 1363320392 JT: Japanese Journal of Applied Physics MD: Ohsawa,51,2s,201,2012,High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction DOI: 10.1143/JJAP.51.02BD01(Journal) (6693698-N) DOI: 10.7567/JJAP.51.02BD01(Journal) ========================================================== Created: 2023-01-05 12:35:35 ConfID: 6693699 CauseID: 1557141135 OtherID: 1363320486 JT: Japanese Journal of Applied Physics MD: Cuong,51,2s,204,2012,Tunable Magnetic Properties of Rhombohedral Graphite Thin Films: Effects of Insulating Substrate on Magnetic Properties DOI: 10.1143/JJAP.51.02BN04(Journal) (6693699-N) DOI: 10.7567/JJAP.51.02BN04(Journal) ========================================================== Created: 2023-01-05 12:35:31 ConfID: 6693696 CauseID: 1557141124 OtherID: 1363320395 JT: Japanese Journal of Applied Physics MD: Lin,51,2s,214,2012,Analytical Model of Subthreshold Current and Threshold Voltage for Fully Depleted Double-Gated Junctionless Transistor DOI: 10.1143/JJAP.51.02BC14(Journal) (6693696-N) DOI: 10.7567/JJAP.51.02BC14(Journal) ========================================================== Created: 2023-01-05 12:35:31 ConfID: 6693697 CauseID: 1557141123 OtherID: 1363320413 JT: Japanese Journal of Applied Physics MD: Johguchi,51,2s,202,2012,Through-Silicon-Via Design with Clustering Structure and Adaptive Through-Silicon-Via Control for Three-Dimentional Solid-State-Drive Boost Converter System DOI: 10.1143/JJAP.51.02BE02(Journal) (6693697-N) DOI: 10.7567/JJAP.51.02BE02(Journal) ========================================================== Created: 2023-01-05 12:36:23 ConfID: 6693710 CauseID: 1557141243 OtherID: 1363320456 JT: Japanese Journal of Applied Physics MD: Mori,51,2s,202,2012,Theory of Resonant Tunneling through a Donor State DOI: 10.1143/JJAP.51.02BJ02(Journal) (6693710-N) DOI: 10.7567/JJAP.51.02BJ02(Journal) ========================================================== Created: 2023-01-05 12:36:23 ConfID: 6693711 CauseID: 1557141244 OtherID: 1363320455 JT: Japanese Journal of Applied Physics MD: Kumagai,51,2s,206,2012,Growth of ZnMgTe/ZnTe Waveguide Structures and Analysis of the Light Polarization with the Electric Field DOI: 10.1143/JJAP.51.02BH06(Journal) (6693711-N) DOI: 10.7567/JJAP.51.02BH06(Journal) ========================================================== Created: 2023-01-05 12:36:05 ConfID: 6693708 CauseID: 1557141199 OtherID: 1363320457 JT: Japanese Journal of Applied Physics MD: Hirai,51,2s,210,2012,Characterization of the Oxide Film Obtained by Wet Oxidation of Al-Rich AlGaAs DOI: 10.1143/JJAP.51.02BG10(Journal) (6693708-N) DOI: 10.7567/JJAP.51.02BG10(Journal) ========================================================== Created: 2023-01-05 12:36:15 ConfID: 6693709 CauseID: 1557141223 OtherID: 1363320440 JT: Japanese Journal of Applied Physics MD: Fujita,51,2s,205,2012,Fabrication of High-Performance Thin-Film Transistors on Glass Substrate by Atmospheric Pressure Micro-Thermal-Plasma-Jet-Induced Lateral Crystallization Technique DOI: 10.1143/JJAP.51.02BH05(Journal) (6693709-N) DOI: 10.7567/JJAP.51.02BH05(Journal) ========================================================== Created: 2023-01-05 12:35:59 ConfID: 6693706 CauseID: 1557141183 OtherID: 1363320426 JT: Japanese Journal of Applied Physics MD: Shih,51,2s,201,2012,Application of Sputtering-Deposited AlN Films to Gate Dielectric for AlGaN/GaN Metal–Insulator–Semiconductor Heterojunction Field-Effect Transistor DOI: 10.1143/JJAP.51.02BF01(Journal) (6693706-N) DOI: 10.7567/JJAP.51.02BF01(Journal) ========================================================== Created: 2023-01-05 12:36:00 ConfID: 6693707 CauseID: 1557141188 OtherID: 1363320434 JT: Japanese Journal of Applied Physics MD: Guo,51,2s,206,2012,Ge/Ni–InGaAs Solid-State Reaction for Contact Resistance Reduction on n+ In0.53Ga0.47As DOI: 10.1143/JJAP.51.02BF06(Journal) (6693707-N) DOI: 10.7567/JJAP.51.02BF06(Journal) ========================================================== Created: 2023-01-05 12:35:52 ConfID: 6693704 CauseID: 1557141170 OtherID: 1363320439 JT: Japanese Journal of Applied Physics MD: Suleiman,51,2s,202,2012,Gate-Leakage and Carrier-Transport Mechanisms for Plasma-PH3 Passivated InGaAs N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.51.02BF02(Journal) (6693704-N) DOI: 10.7567/JJAP.51.02BF02(Journal) ========================================================== Created: 2023-01-05 12:35:55 ConfID: 6693705 CauseID: 1557141176 OtherID: 1363321736 JT: Japanese Journal of Applied Physics MD: Ota,51,2s,203,2012,Two-Dimensional Mapping of Power Consumption Due to Series Resistance Evaluated by Simulator for Concentrator Photovoltaic Module DOI: 10.1143/JJAP.51.02BP03(Journal) (6693705-N) DOI: 10.7567/JJAP.51.02BP03(Journal) ========================================================== Created: 2023-01-05 12:36:38 ConfID: 6693717 CauseID: 1557141277 OtherID: 1363320450 JT: Japanese Journal of Applied Physics MD: Kawazu,51,2s,209,2012,Effects of Interface Grading on Electronic States in Columnar Type-II Quantum Dots DOI: 10.1143/JJAP.51.02BJ09(Journal) (6693717-N) DOI: 10.7567/JJAP.51.02BJ09(Journal) ========================================================== Created: 2023-01-05 12:36:33 ConfID: 6693713 CauseID: 1557141267 OtherID: 1363320446 JT: Japanese Journal of Applied Physics MD: Fujii,51,2s,203,2012,Tri-Gate Polycrystalline Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization with Improved Electron Transport Properties DOI: 10.1143/JJAP.51.02BJ03(Journal) (6693713-N) DOI: 10.7567/JJAP.51.02BJ03(Journal) ========================================================== Created: 2023-01-05 12:36:49 ConfID: 6693724 CauseID: 1557141295 OtherID: 1363320490 JT: Japanese Journal of Applied Physics MD: Iga,51,2s,202,2012,Time-Resolved Switching Characteristic in Magnetic Tunnel Junction with Spin Transfer Torque Write Scheme DOI: 10.1143/JJAP.51.02BM02(Journal) (6693724-N) DOI: 10.7567/JJAP.51.02BM02(Journal) ========================================================== Created: 2023-01-05 12:36:44 ConfID: 6693723 CauseID: 1557141290 OtherID: 1363320459 JT: Japanese Journal of Applied Physics MD: Kanashima,51,2s,206,2012,Organic Ferroelectric Field-Effect Transistor Memory Using Flat Poly(vinylidene fluoride–tetrafluoroethylene) and Pentacene Thin Films DOI: 10.1143/JJAP.51.02BK06(Journal) (6693723-N) DOI: 10.7567/JJAP.51.02BK06(Journal) ========================================================== Created: 2023-01-05 12:34:19 ConfID: 6693670 CauseID: 1557140958 OtherID: 1363320188 JT: Japanese Journal of Applied Physics MD: Kumagai,51,1s,104,2012,Multiple-Height Microstructure Fabricated by Deep Reactive Ion Etching and Selective Ashing of Resist Layer Combined with Ultraviolet Curing DOI: 10.1143/JJAP.51.01AB04(Journal) (6693670-N) DOI: 10.7567/JJAP.51.01AB04(Journal) ========================================================== Created: 2023-01-05 12:34:20 ConfID: 6693671 CauseID: 1557140960 OtherID: 1363320394 JT: Japanese Journal of Applied Physics MD: Lee,51,2s,213,2012,Impact of Dynamic Stress on Reliability of Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with SiON Gate Dielectric Operating in a Complementary Metal–Oxide–Semiconductor Inverter at Elevated Temperature DOI: 10.1143/JJAP.51.02BC13(Journal) (6693671-N) DOI: 10.7567/JJAP.51.02BC13(Journal) ========================================================== Created: 2023-01-05 12:34:16 ConfID: 6693668 CauseID: 1557140951 OtherID: 1363320209 JT: Japanese Journal of Applied Physics MD: Mitsugi,51,1s,110,2012,Observation of Phenomena After Pulsed Laser Irradiation of Solid with Optical Wave Microphone DOI: 10.1143/JJAP.51.01AC10(Journal) (6693668-N) DOI: 10.7567/JJAP.51.01AC10(Journal) ========================================================== Created: 2023-01-05 12:34:17 ConfID: 6693669 CauseID: 1557140954 OtherID: 1363320182 JT: Japanese Journal of Applied Physics MD: Hayashi,51,1r,16201,2012,Quantum Chemical Investigation for Chemical Dry Etching of SiO2 by Flowing NF3 into H2 Downflow Plasma DOI: 10.1143/JJAP.51.016201(Journal) (6693669-N) DOI: 10.7567/JJAP.51.016201(Journal) ========================================================== Created: 2023-01-05 12:34:11 ConfID: 6693666 CauseID: 1557140944 OtherID: 1363320200 JT: Japanese Journal of Applied Physics MD: Teraoka,51,1s,103,2012,Anisotropic Graphite Erosion in Low-Temperature and High-Density Deuterium Plasma DOI: 10.1143/JJAP.51.01AB03(Journal) (6693666-N) DOI: 10.7567/JJAP.51.01AB03(Journal) ========================================================== Created: 2023-01-05 12:34:12 ConfID: 6693667 CauseID: 1557140946 OtherID: 1363320159 JT: Japanese Journal of Applied Physics MD: Kamiya,51,1r,15001,2012,Geometries and Electronic Structures of Diamond Nanoparticles DOI: 10.1143/JJAP.51.015001(Journal) (6693667-N) DOI: 10.7567/JJAP.51.015001(Journal) ========================================================== Created: 2023-01-05 12:34:10 ConfID: 6693664 CauseID: 1557140935 OtherID: 1363320424 JT: Japanese Journal of Applied Physics MD: Morimoto,51,2s,210,2012,Complementary Metal Oxide Semiconductor Operational Amplifier Offset Calibration Technique Using Closed Loop Offset Amplifier and Folded-Alternated Resistor String Digital-to-Analog Converter DOI: 10.1143/JJAP.51.02BE10(Journal) (6693664-N) DOI: 10.7567/JJAP.51.02BE10(Journal) ========================================================== Created: 2023-01-05 12:34:14 ConfID: 6693665 CauseID: 1557140941 OtherID: 1363320169 JT: Japanese Journal of Applied Physics MD: Bai,51,1r,15503,2012,Fabrication and Electrical Properties of Ba(Zr,Ti)O3 Textured Ceramics by Templated Grain Growth DOI: 10.1143/JJAP.51.015503(Journal) (6693665-N) DOI: 10.7567/JJAP.51.015503(Journal) ========================================================== Created: 2023-01-05 12:34:38 ConfID: 6693678 CauseID: 1557141004 OtherID: 1363320470 JT: Japanese Journal of Applied Physics MD: Itoh,51,2s,214,2012,Relationship between Work Function of Hole Collection Electrode and Temperature Dependence of Open-Circuit Voltage in Multilayered Organic Solar Cells DOI: 10.1143/JJAP.51.02BK14(Journal) (6693678-N) DOI: 10.7567/JJAP.51.02BK14(Journal) ========================================================== Created: 2023-01-05 12:34:41 ConfID: 6693679 CauseID: 1557141010 OtherID: 1363320432 JT: Japanese Journal of Applied Physics MD: Kawamura,51,2s,204,2012,Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition DOI: 10.1143/JJAP.51.02BF04(Journal) (6693679-N) DOI: 10.7567/JJAP.51.02BF04(Journal) ========================================================== Created: 2023-01-05 12:34:30 ConfID: 6693676 CauseID: 1557140989 OtherID: 1363320213 JT: Japanese Journal of Applied Physics MD: Ichikawa,51,1s,107,2012,Effect of Growth Temperature on Structural Quality of InAlN Layer Lattice Matched to GaN Grown by Metal Organic Chemical Vapor Deposition DOI: 10.1143/JJAP.51.01AF07(Journal) (6693676-N) DOI: 10.7567/JJAP.51.01AF07(Journal) ========================================================== Created: 2023-01-05 12:34:37 ConfID: 6693677 CauseID: 1557141003 OtherID: 1363320453 JT: Japanese Journal of Applied Physics MD: Nagata,51,2s,204,2012,Impact of Rapid Crystallization of Si Using Nickel-Metal-Induced Lateral Crystallization on Thin-Film Transistor Characteristics DOI: 10.1143/JJAP.51.02BH04(Journal) (6693677-N) DOI: 10.7567/JJAP.51.02BH04(Journal) ========================================================== Created: 2023-01-05 12:34:26 ConfID: 6693674 CauseID: 1557140977 OtherID: 1363320402 JT: Japanese Journal of Applied Physics MD: Wang,51,2s,211,2012,Characterization of Oxide Tarps in 28 nm p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise DOI: 10.1143/JJAP.51.02BC11(Journal) (6693674-N) DOI: 10.7567/JJAP.51.02BC11(Journal) ========================================================== Created: 2023-01-05 12:34:29 ConfID: 6693675 CauseID: 1557140982 OtherID: 1363320454 JT: Japanese Journal of Applied Physics MD: Lee,51,2s,204,2012,Bottom Electrode Modification of ZrO2 Resistive Switching Memory Device with Au Nanodots DOI: 10.1143/JJAP.51.02BJ04(Journal) (6693675-N) DOI: 10.7567/JJAP.51.02BJ04(Journal) ========================================================== Created: 2023-01-05 12:34:20 ConfID: 6693672 CauseID: 1557140962 OtherID: 1363320217 JT: Japanese Journal of Applied Physics MD: Pak,51,1s,104,2012,Growth of ZnTe:O Thin Films by Oxygen-Plasma-Assisted Pulsed Laser Deposition DOI: 10.1143/JJAP.51.01AD04(Journal) (6693672-N) DOI: 10.7567/JJAP.51.01AD04(Journal) ========================================================== Created: 2023-01-05 12:34:22 ConfID: 6693673 CauseID: 1557140967 OtherID: 1363320192 JT: Japanese Journal of Applied Physics MD: Kumagai,51,1s,101,2012,Floating Wire for Enhancing Ignition of Atmospheric Pressure Inductively Coupled Microplasma DOI: 10.1143/JJAP.51.01AA01(Journal) (6693673-N) DOI: 10.7567/JJAP.51.01AA01(Journal) ========================================================== Created: 2023-01-05 12:35:00 ConfID: 6693686 CauseID: 1557141061 OtherID: 1363320243 JT: Japanese Journal of Applied Physics MD: Chen,51,1s,106,2012,Improvement of Thermoplastic Polyurethane Nonwoven Hydrophilicity by Atmospheric Pressure Plasma Treatment with He and N2 Mixed Gases DOI: 10.1143/JJAP.51.01AJ06(Journal) (6693686-N) DOI: 10.7567/JJAP.51.01AJ06(Journal) ========================================================== Created: 2023-01-05 12:35:05 ConfID: 6693687 CauseID: 1557141069 OtherID: 1363320244 JT: Japanese Journal of Applied Physics MD: Watanabe,51,1s,107,2012,Control of Super Hydrophobic and Super Hydrophilic Surfaces of Carbon Nanowalls Using Atmospheric Pressure Plasma Treatments DOI: 10.1143/JJAP.51.01AJ07(Journal) (6693687-N) DOI: 10.7567/JJAP.51.01AJ07(Journal) ========================================================== Created: 2023-01-05 12:34:57 ConfID: 6693684 CauseID: 1557141050 OtherID: 1363320444 JT: Japanese Journal of Applied Physics MD: Yamagishi,51,2s,208,2012,Correlation of 1/f Noise between Semiconductor Point Contacts with a Common Lead DOI: 10.1143/JJAP.51.02BJ08(Journal) (6693684-N) DOI: 10.7567/JJAP.51.02BJ08(Journal) ========================================================== Created: 2023-01-05 12:35:04 ConfID: 6693685 CauseID: 1557141058 OtherID: 1363320364 JT: Japanese Journal of Applied Physics MD: Kuroda,51,2s,201,2012,On the Interface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology DOI: 10.1143/JJAP.51.02BA01(Journal) (6693685-N) DOI: 10.7567/JJAP.51.02BA01(Journal) ========================================================== Created: 2023-01-05 12:34:51 ConfID: 6693682 CauseID: 1557141036 OtherID: 1363320224 JT: Japanese Journal of Applied Physics MD: Abe,51,1s,107,2012,Interaction of Ethylene Carbonate and Graphene Chip: Density Functional Theory Study DOI: 10.1143/JJAP.51.01AH07(Journal) (6693682-N) DOI: 10.7567/JJAP.51.01AH07(Journal) ========================================================== Created: 2023-01-05 12:34:52 ConfID: 6693683 CauseID: 1557141037 OtherID: 1363320462 JT: Japanese Journal of Applied Physics MD: Kamiya,51,2s,211,2012,Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice DOI: 10.1143/JJAP.51.02BJ11(Journal) (6693683-N) DOI: 10.7567/JJAP.51.02BJ11(Journal) ========================================================== Created: 2023-01-05 12:34:44 ConfID: 6693680 CauseID: 1557141015 OtherID: 1363320237 JT: Japanese Journal of Applied Physics MD: Cho,51,1s,102,2012,Effects of Irradiation with Ions and Photons in Ultraviolet–Vacuum Ultraviolet Regions on Nano-Surface Properties of Polymers Exposed to Plasmas DOI: 10.1143/JJAP.51.01AJ02(Journal) (6693680-N) DOI: 10.7567/JJAP.51.01AJ02(Journal) ========================================================== Created: 2023-01-05 12:34:49 ConfID: 6693681 CauseID: 1557141030 OtherID: 1363320464 JT: Japanese Journal of Applied Physics MD: Itoh,51,2s,213,2012,Fabrication of Inverted Bulk-Heterojunction Organic Solar Cell with Ultrathin Titanium Oxide Nanosheet as an Electron-Extracting Buffer Layer DOI: 10.1143/JJAP.51.02BK13(Journal) (6693681-N) DOI: 10.7567/JJAP.51.02BK13(Journal) ========================================================== Created: 2023-01-05 12:35:28 ConfID: 6693694 CauseID: 1557141112 OtherID: 1363320477 JT: Japanese Journal of Applied Physics MD: Okigawa,51,2s,201,2012,Estimation of Height of Barrier Formed in Metallic Carbon Nanotube DOI: 10.1143/JJAP.51.02BN01(Journal) (6693694-N) DOI: 10.7567/JJAP.51.02BN01(Journal) ========================================================== Created: 2023-01-05 12:35:15 ConfID: 6693692 CauseID: 1557141092 OtherID: 1363321738 JT: Japanese Journal of Applied Physics MD: Matsunaga,51,2s,206,2012,Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory DOI: 10.1143/JJAP.51.02BM06(Journal) (6693692-N) DOI: 10.7567/JJAP.51.02BM06(Journal) ========================================================== Created: 2023-01-05 12:35:20 ConfID: 6693693 CauseID: 1557141102 OtherID: 1363320433 JT: Japanese Journal of Applied Physics MD: Kaneshige,51,2s,201,2012,InGaAs/InAlAs Multiple Quantum Well Mach–Zehnder Modulator with Single Microring Resonator DOI: 10.1143/JJAP.51.02BG01(Journal) (6693693-N) DOI: 10.7567/JJAP.51.02BG01(Journal) ========================================================== Created: 2023-01-05 12:35:13 ConfID: 6693690 CauseID: 1557141086 OtherID: 1363320393 JT: Japanese Journal of Applied Physics MD: Hu,51,2s,209,2012,The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.51.02BC09(Journal) (6693690-N) DOI: 10.7567/JJAP.51.02BC09(Journal) ========================================================== Created: 2023-01-05 12:35:16 ConfID: 6693691 CauseID: 1557141093 OtherID: 1363320265 JT: Japanese Journal of Applied Physics MD: Tsai,51,1s,101,2012,Single-Step Synthesis of Al-Doped TiO2 Nanoparticles Using Non-Transferred Thermal Plasma Torch DOI: 10.1143/JJAP.51.01AL01(Journal) (6693691-N) DOI: 10.7567/JJAP.51.01AL01(Journal) ========================================================== Created: 2023-01-05 12:35:08 ConfID: 6693688 CauseID: 1557141074 OtherID: 1363320461 JT: Japanese Journal of Applied Physics MD: You,51,2s,204,2012,Effects of Film Thickness on the Photocurrent Generation from Polythiophene–Fullerene Thin Films Containing Silver Nanoparticles DOI: 10.1143/JJAP.51.02BK04(Journal) (6693688-N) DOI: 10.7567/JJAP.51.02BK04(Journal) ========================================================== Created: 2023-01-05 12:35:10 ConfID: 6693689 CauseID: 1557141081 OtherID: 1363320397 JT: Japanese Journal of Applied Physics MD: Ma,51,2s,207,2012,Unified Reaction–Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect DOI: 10.1143/JJAP.51.02BC07(Journal) (6693689-N) DOI: 10.7567/JJAP.51.02BC07(Journal) ========================================================== Created: 2023-01-05 12:33:07 ConfID: 6693638 CauseID: 1557140786 OtherID: 1363320483 JT: Japanese Journal of Applied Physics MD: Ashikari,51,2s,203,2012,Climbing Rates of Microtubules Propelled by Dynein after Collision with Microfabricated Walls DOI: 10.1143/JJAP.51.02BL03(Journal) (6693638-N) DOI: 10.7567/JJAP.51.02BL03(Journal) ========================================================== Created: 2023-01-05 12:33:07 ConfID: 6693639 CauseID: 1557140787 OtherID: 1363320484 JT: Japanese Journal of Applied Physics MD: Akiho,51,2s,201,2012,Effect of MgO Barrier Insertion on Spin-Dependent Transport Properties of CoFe/n-GaAs Heterojunctions DOI: 10.1143/JJAP.51.02BM01(Journal) (6693639-N) DOI: 10.7567/JJAP.51.02BM01(Journal) ========================================================== Created: 2023-01-05 12:33:05 ConfID: 6693636 CauseID: 1557140783 OtherID: 1363320427 JT: Japanese Journal of Applied Physics MD: Jung,51,2s,206,2012,Highly Sensitive Gate/Body-Tied P-Channel Metal Oxide Semiconductor Field Effect Transistor-Type Photodetector with an Overlapping Control Gate DOI: 10.1143/JJAP.51.02BG06(Journal) (6693636-N) DOI: 10.7567/JJAP.51.02BG06(Journal) ========================================================== Created: 2023-01-05 12:33:06 ConfID: 6693637 CauseID: 1557140784 OtherID: 1363320467 JT: Japanese Journal of Applied Physics MD: Lee,51,2s,209,2012,Characterization on Improved Effective Mobility of Pentacene Organic Field-Effect Transistors Using Graphene Electrodes DOI: 10.1143/JJAP.51.02BK09(Journal) (6693637-N) DOI: 10.7567/JJAP.51.02BK09(Journal) ========================================================== Created: 2023-01-05 12:32:58 ConfID: 6693634 CauseID: 1557140761 OtherID: 1363320196 JT: Japanese Journal of Applied Physics MD: Suzuki,51,1s,103,2012,Quartz Sensor Measurement for N2–H2 Plasmas DOI: 10.1143/JJAP.51.01AA03(Journal) (6693634-N) DOI: 10.7567/JJAP.51.01AA03(Journal) ========================================================== Created: 2023-01-05 12:33:05 ConfID: 6693635 CauseID: 1557140782 OtherID: 1363320478 JT: Japanese Journal of Applied Physics MD: Imaeda,51,2s,206,2012,Observation of n-Type Conduction in Carbon Nanotube Field-Effect Transistors with Au Contacts in Vacuum DOI: 10.1143/JJAP.51.02BN06(Journal) (6693635-N) DOI: 10.7567/JJAP.51.02BN06(Journal) ========================================================== Created: 2023-01-05 12:32:56 ConfID: 6693632 CauseID: 1557140764 OtherID: 1363320481 JT: Japanese Journal of Applied Physics MD: Ohsugi,51,2s,205,2012,MgO Layer Thickness Dependence of Structure and Magnetic Properties of L10-FePt/MgO/GaAs Structures DOI: 10.1143/JJAP.51.02BM05(Journal) (6693632-N) DOI: 10.7567/JJAP.51.02BM05(Journal) ========================================================== Created: 2023-01-05 12:32:56 ConfID: 6693633 CauseID: 1557140765 OtherID: 1363320473 JT: Japanese Journal of Applied Physics MD: Fukuda,51,2s,212,2012,Improved Power Conversion Efficiency of Organic Photovoltaic Cell Fabricated by Electrospray Deposition Method by Mixing Different Solvents DOI: 10.1143/JJAP.51.02BK12(Journal) (6693633-N) DOI: 10.7567/JJAP.51.02BK12(Journal) ========================================================== Created: 2023-01-05 12:33:23 ConfID: 6693646 CauseID: 1557140826 OtherID: 1363320131 JT: Japanese Journal of Applied Physics MD: Kaneko,51,1r,10116,2012,Review of Josephson Waveform Synthesis and Possibility of New Operation Method by Multibit Delta–Sigma Modulation and Thermometer Code for Its Further Advancement DOI: 10.1143/JJAP.51.010116(Journal) (6693646-N) DOI: 10.7567/JJAP.51.010116(Journal) ========================================================== Created: 2023-01-05 12:33:24 ConfID: 6693647 CauseID: 1557140828 OtherID: 1363320111 JT: Japanese Journal of Applied Physics MD: Uchida,51,1r,10002,2012,Forefront in the Elucidation of the Mechanism of High-Temperature Superconductivity DOI: 10.1143/JJAP.51.010002(Journal) (6693647-N) DOI: 10.7567/JJAP.51.010002(Journal) ========================================================== Created: 2023-01-05 12:33:21 ConfID: 6693644 CauseID: 1557140823 OtherID: 1363320441 JT: Japanese Journal of Applied Physics MD: Mori,51,2s,203,2012,Effects of Initial In Coverage for Preparation of InSb Bilayer on Electrical Properties of InSb Films Grown By Surface Reconstruction Controlled Epitaxy DOI: 10.1143/JJAP.51.02BH03(Journal) (6693644-N) DOI: 10.7567/JJAP.51.02BH03(Journal) ========================================================== Created: 2023-01-05 12:33:22 ConfID: 6693645 CauseID: 1557140824 OtherID: 1363320249 JT: Japanese Journal of Applied Physics MD: Xu,51,1s,103,2012,Determination of Creep Life of Glass Fiber/Phenol Composite Filled with Carbon Nanotubes by Four-Point Flexural Creep Test DOI: 10.1143/JJAP.51.01AK03(Journal) (6693645-N) DOI: 10.7567/JJAP.51.01AK03(Journal) ========================================================== Created: 2023-01-05 12:33:20 ConfID: 6693642 CauseID: 1557140820 OtherID: 1363320449 JT: Japanese Journal of Applied Physics MD: Nakaoka,51,2s,205,2012,Wavelength Tunable Quantum Dot Single-Photon Source with a Side Gate DOI: 10.1143/JJAP.51.02BJ05(Journal) (6693642-N) DOI: 10.7567/JJAP.51.02BJ05(Journal) ========================================================== Created: 2023-01-05 12:33:21 ConfID: 6693643 CauseID: 1557140822 OtherID: 1363320474 JT: Japanese Journal of Applied Physics MD: Masuda,51,2s,215,2012,Photovoltaic Properties of 1,4,8,11,15,18,22,25-Octaalkylphthalocyanine Doped Polymer Bulk Heterojunction Solar Cells DOI: 10.1143/JJAP.51.02BK15(Journal) (6693643-N) DOI: 10.7567/JJAP.51.02BK15(Journal) ========================================================== Created: 2023-01-05 12:33:09 ConfID: 6693640 CauseID: 1557140789 OtherID: 1363320460 JT: Japanese Journal of Applied Physics MD: Chang,51,2s,202,2012,Deposition of Transparent Indium Molybdenum Oxide Thin Films and the Application for Organic Solar Cells DOI: 10.1143/JJAP.51.02BK02(Journal) (6693640-N) DOI: 10.7567/JJAP.51.02BK02(Journal) ========================================================== Created: 2023-01-05 12:33:11 ConfID: 6693641 CauseID: 1557140797 OtherID: 1363320105 JT: Japanese Journal of Applied Physics MD: Yamamoto,51,1r,10105,2012,Towards the Realization of Higher Connectivity in MgB2 Conductors: In-situ or Sintered Ex-situ? DOI: 10.1143/JJAP.51.010105(Journal) (6693641-N) DOI: 10.7567/JJAP.51.010105(Journal) ========================================================== Created: 2023-01-05 12:33:45 ConfID: 6693654 CauseID: 1557140877 OtherID: 1363320251 JT: Japanese Journal of Applied Physics MD: Yabuuchi,51,1s,105,2012,Influence of Pulse Rising Time on Plasma Irradiation Effect DOI: 10.1143/JJAP.51.01AJ05(Journal) (6693654-N) DOI: 10.7567/JJAP.51.01AJ05(Journal) ========================================================== Created: 2023-01-05 12:33:46 ConfID: 6693655 CauseID: 1557140880 OtherID: 1363320167 JT: Japanese Journal of Applied Physics MD: Hirai,51,1r,14101,2012,Experimental and Theoretical Evaluation of Cu(In,Ga)Se2 Concentrator Solar Cells DOI: 10.1143/JJAP.51.014101(Journal) (6693655-N) DOI: 10.7567/JJAP.51.014101(Journal) ========================================================== Created: 2023-01-05 12:33:43 ConfID: 6693652 CauseID: 1557140871 OtherID: 1363320208 JT: Japanese Journal of Applied Physics MD: Lee,51,1s,101,2012,Growth of Less Bowed GaN Epitaxial Layers on Sapphire Substrates by Formation of Low-Temperature GaN Buffer Layer with Columnar Microstructure DOI: 10.1143/JJAP.51.01AF01(Journal) (6693652-N) DOI: 10.7567/JJAP.51.01AF01(Journal) ========================================================== Created: 2023-01-05 12:33:44 ConfID: 6693653 CauseID: 1557140873 OtherID: 1363320226 JT: Japanese Journal of Applied Physics MD: Tsai,51,1s,104,2012,Further Improvement in the Light Output Power of InGaN-Based Light Emitting Diodes by Patterned Sapphire Substrate with KOH Wet-Chemical Etching on Sidewall DOI: 10.1143/JJAP.51.01AG04(Journal) (6693653-N) DOI: 10.7567/JJAP.51.01AG04(Journal) ========================================================== Created: 2023-01-05 12:33:37 ConfID: 6693650 CauseID: 1557140857 OtherID: 1363320492 JT: Japanese Journal of Applied Physics MD: Lin,51,2s,202,2012,Recovery Based Nanowire Field-Effect Transistor Detection of Pathogenic Avian Influenza DNA DOI: 10.1143/JJAP.51.02BL02(Journal) (6693650-N) DOI: 10.7567/JJAP.51.02BL02(Journal) ========================================================== Created: 2023-01-05 12:33:41 ConfID: 6693651 CauseID: 1557140868 OtherID: 1363320502 JT: Japanese Journal of Applied Physics MD: Mentek,51,2s,205,2012,Photovoltaic Property of Wide-Gap Nanocrystalline Silicon Layers DOI: 10.1143/JJAP.51.02BP05(Journal) (6693651-N) DOI: 10.7567/JJAP.51.02BP05(Journal) ========================================================== Created: 2023-01-05 12:33:32 ConfID: 6693648 CauseID: 1557140845 OtherID: 1363320194 JT: Japanese Journal of Applied Physics MD: Nakao,51,1s,104,2012,Optical and Electrical Properties of Nitrogen-Doped Diamond-Like Carbon Films Prepared by a Bipolar-Type Plasma-Based Ion Implantation DOI: 10.1143/JJAP.51.01AC04(Journal) (6693648-N) DOI: 10.7567/JJAP.51.01AC04(Journal) ========================================================== Created: 2023-01-05 12:33:36 ConfID: 6693649 CauseID: 1557140855 OtherID: 1363320160 JT: Japanese Journal of Applied Physics MD: Mirbagheri,51,1r,15101,2012,Macroscopic Synthesis of Vertically Aligned Carbon Nanotubes Using Floating Catalyst Chemical Vapor Deposition Method DOI: 10.1143/JJAP.51.015101(Journal) (6693649-N) DOI: 10.7567/JJAP.51.015101(Journal) ========================================================== Created: 2023-01-05 12:34:07 ConfID: 6693662 CauseID: 1557140930 OtherID: 1363320195 JT: Japanese Journal of Applied Physics MD: Kasuya,51,1s,101,2012,Deposition of SiO2 Thin Films on Polycarbonate by Atmospheric-Pressure Plasma DOI: 10.1143/JJAP.51.01AC01(Journal) (6693662-N) DOI: 10.7567/JJAP.51.01AC01(Journal) ========================================================== Created: 2023-01-05 12:34:08 ConfID: 6693663 CauseID: 1557140932 OtherID: 1363320403 JT: Japanese Journal of Applied Physics MD: Kamakura,51,2s,205,2012,Characteristics of Hot Hole Injection, Trapping, and Detrapping in Gate Oxide of Polycrystalline Silicon Thin-Film Transistors DOI: 10.1143/JJAP.51.02BC05(Journal) (6693663-N) DOI: 10.7567/JJAP.51.02BC05(Journal) ========================================================== Created: 2023-01-05 12:34:01 ConfID: 6693660 CauseID: 1557140919 OtherID: 1363320138 JT: Japanese Journal of Applied Physics MD: Kishimoto,51,1r,12203,2012,Loss-less Wavelength Converter with Ridge-Type Annealed Proton-Exchanged Periodically Poled MgO-Doped Congruent LiNbO3 Waveguide DOI: 10.1143/JJAP.51.012203(Journal) (6693660-N) DOI: 10.7567/JJAP.51.012203(Journal) ========================================================== Created: 2023-01-05 12:34:02 ConfID: 6693661 CauseID: 1557140921 OtherID: 1363320234 JT: Japanese Journal of Applied Physics MD: Ive,51,1s,107,2012,Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology DOI: 10.1143/JJAP.51.01AG07(Journal) (6693661-N) DOI: 10.7567/JJAP.51.01AG07(Journal) ========================================================== Created: 2023-01-05 12:33:59 ConfID: 6693658 CauseID: 1557140902 OtherID: 1363320499 JT: Japanese Journal of Applied Physics MD: Tachibana,51,2s,208,2012,Impact of Light-Element Impurities on Crystalline Defect Generation in Silicon Wafer DOI: 10.1143/JJAP.51.02BP08(Journal) (6693658-N) DOI: 10.7567/JJAP.51.02BP08(Journal) ========================================================== Created: 2023-01-05 12:33:56 ConfID: 6693659 CauseID: 1557140905 OtherID: 1363320227 JT: Japanese Journal of Applied Physics MD: Lin,51,1s,103,2012,Micro-Square-Array InGaN-Based Light-Emitting Diode with an Insulated Ga2O3 Layer through a Photoelectrochemical Process DOI: 10.1143/JJAP.51.01AG03(Journal) (6693659-N) DOI: 10.7567/JJAP.51.01AG03(Journal) ========================================================== Created: 2023-01-05 12:33:47 ConfID: 6693656 CauseID: 1557140881 OtherID: 1363320143 JT: Japanese Journal of Applied Physics MD: Lai,51,1r,11301,2012,Effect of Nickel Concentration on Bias Reliability and Thermal Stability of Thin-Film Transistors Fabricated by Ni-Metal-Induced Crystallization DOI: 10.1143/JJAP.51.011301(Journal) (6693656-N) DOI: 10.7567/JJAP.51.011301(Journal) ========================================================== Created: 2023-01-05 12:33:53 ConfID: 6693657 CauseID: 1557140886 OtherID: 1363320215 JT: Japanese Journal of Applied Physics MD: Jeon,51,1s,101,2012,Ultraviolet Light Emitting Diode with High Quality Epilayer Grown by Hydride Vapor Phase Epitaxy DOI: 10.1143/JJAP.51.01AG01(Journal) (6693657-N) DOI: 10.7567/JJAP.51.01AG01(Journal) ========================================================== Created: 2023-01-05 12:40:35 ConfID: 6693830 CauseID: 1557141840 OtherID: 1363323468 JT: Japanese Journal of Applied Physics MD: Chung,50,3s,305,2011,All-Inkjet-Printed Organic Thin-Film Transistors with Silver Gate, Source/Drain Electrodes DOI: 10.1143/JJAP.50.03CB05(Journal) (6693830-N) DOI: 10.7567/JJAP.50.03CB05(Journal) ========================================================== Created: 2023-01-05 12:40:33 ConfID: 6693831 CauseID: 1557141835 OtherID: 1363323311 JT: Japanese Journal of Applied Physics MD: He,50,2r,25802,2011,Piezoelectric Properties of Pb0.98Bi0.02Zr0.51Ti0.48Zn0.01O3 Ceramics DOI: 10.1143/JJAP.50.025802(Journal) (6693831-N) DOI: 10.7567/JJAP.50.025802(Journal) ========================================================== Created: 2023-01-05 12:40:31 ConfID: 6693828 CauseID: 1557141831 OtherID: 1363323487 JT: Japanese Journal of Applied Physics MD: Cai,50,4r,40204,2011,Efficient Low-Driving-Voltage Blue Phosphorescent Homojunction Organic Light-Emitting Devices DOI: 10.1143/JJAP.50.040204(Journal) (6693828-N) DOI: 10.7567/JJAP.50.040204(Journal) ========================================================== Created: 2023-01-05 12:40:32 ConfID: 6693829 CauseID: 1557141834 OtherID: 1363323293 JT: Japanese Journal of Applied Physics MD: Kagoshima,50,2r,22503,2011,Tandem-Phase Zone-Plate Optics for High-Energy X-ray Focusing DOI: 10.1143/JJAP.50.022503(Journal) (6693829-N) DOI: 10.7567/JJAP.50.022503(Journal) ========================================================== Created: 2023-01-05 12:40:30 ConfID: 6693826 CauseID: 1557141829 OtherID: 1363323323 JT: Japanese Journal of Applied Physics MD: Munteanu,50,2r,24301,2011,Quantum Compact Model of Drain Current in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.50.024301(Journal) (6693826-N) DOI: 10.7567/JJAP.50.024301(Journal) ========================================================== Created: 2023-01-05 12:40:31 ConfID: 6693827 CauseID: 1557141832 OtherID: 1363323488 JT: Japanese Journal of Applied Physics MD: Yang,50,4r,40202,2011,Fabrication of Transparent p-Type CuxZnyS Thin Films by the Electrochemical Deposition Method DOI: 10.1143/JJAP.50.040202(Journal) (6693827-N) DOI: 10.7567/JJAP.50.040202(Journal) ========================================================== Created: 2023-01-05 12:40:34 ConfID: 6693824 CauseID: 1557141827 OtherID: 1363323479 JT: Japanese Journal of Applied Physics MD: Hwang,50,3s,306,2011,Inverters Using Only N-Type Indium Gallium Zinc Oxide Thin Film Transistors for Flat Panel Display Applications DOI: 10.1143/JJAP.50.03CB06(Journal) (6693824-N) DOI: 10.7567/JJAP.50.03CB06(Journal) ========================================================== Created: 2023-01-05 12:40:34 ConfID: 6693825 CauseID: 1557141828 OtherID: 1363323318 JT: Japanese Journal of Applied Physics MD: Kuo,50,2r,25003,2011,Thermoelectric Properties of Double Quantum Dots Embedded in a Nanowire DOI: 10.1143/JJAP.50.025003(Journal) (6693825-N) DOI: 10.7567/JJAP.50.025003(Journal) ========================================================== Created: 2023-01-05 12:40:37 ConfID: 6693834 CauseID: 1557141843 OtherID: 1363323502 JT: Japanese Journal of Applied Physics MD: Kumar,50,4r,40203,2011,Perfluoropolymer as Planar Alignment Layer for Liquid Crystal Mixtures DOI: 10.1143/JJAP.50.040203(Journal) (6693834-N) DOI: 10.7567/JJAP.50.040203(Journal) ========================================================== Created: 2023-01-05 12:40:35 ConfID: 6693832 CauseID: 1557141841 OtherID: 1363323484 JT: Japanese Journal of Applied Physics MD: Lee,50,3s,310,2011,Proposal of Fast-Moving Ball Actuator Mode for Electronic-Paper Displays DOI: 10.1143/JJAP.50.03CC10(Journal) (6693832-N) DOI: 10.7567/JJAP.50.03CC10(Journal) ========================================================== Created: 2023-01-05 12:40:36 ConfID: 6693833 CauseID: 1557141842 OtherID: 1363323486 JT: Japanese Journal of Applied Physics MD: Toyotaka,50,3s,309,2011,6.0-Inch Extended Graphics Array Reflective Liquid Crystal Display Using Oxide Semiconductor Thin Film Transistors for Electronic Paper Display DOI: 10.1143/JJAP.50.03CC09(Journal) (6693833-N) DOI: 10.7567/JJAP.50.03CC09(Journal) ========================================================== Created: 2023-01-05 12:39:26 ConfID: 6693798 CauseID: 1557141662 OtherID: 1363323286 JT: Japanese Journal of Applied Physics MD: Nomura,50,2r,21502,2011,Effect of Annealing on Optical Absorption of LaAlO3 at Terahertz Frequencies DOI: 10.1143/JJAP.50.021502(Journal) (6693798-N) DOI: 10.7567/JJAP.50.021502(Journal) ========================================================== Created: 2023-01-05 12:39:26 ConfID: 6693799 CauseID: 1557141663 OtherID: 1363323498 JT: Japanese Journal of Applied Physics MD: Abe,50,4r,40201,2011,Origin of Crossover in Current Density–Voltage Characteristics of Cu(In,Ga)Se2 Thin Film Solar Cell Fabricated Using Lift-Off Process DOI: 10.1143/JJAP.50.040201(Journal) (6693799-N) DOI: 10.7567/JJAP.50.040201(Journal) ========================================================== Created: 2023-01-05 12:39:20 ConfID: 6693796 CauseID: 1557141650 OtherID: 1363323316 JT: Japanese Journal of Applied Physics MD: Nakamine,50,2r,25002,2011,Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System DOI: 10.1143/JJAP.50.025002(Journal) (6693796-N) DOI: 10.7567/JJAP.50.025002(Journal) ========================================================== Created: 2023-01-05 12:39:21 ConfID: 6693797 CauseID: 1557141651 OtherID: 1363323475 JT: Japanese Journal of Applied Physics MD: Park,50,3s,308,2011,Light Response of Top Gate InGaZnO Thin Film Transistor DOI: 10.1143/JJAP.50.03CB08(Journal) (6693797-N) DOI: 10.7567/JJAP.50.03CB08(Journal) ========================================================== Created: 2023-01-05 12:39:17 ConfID: 6693794 CauseID: 1557141644 OtherID: 1363323478 JT: Japanese Journal of Applied Physics MD: Hasumi,50,3s,303,2011,Characterization of Plasma-Irradiated SiO2/Si Interface Properties by Photoinduced-Carrier Microwave Absorption Method DOI: 10.1143/JJAP.50.03CA03(Journal) (6693794-N) DOI: 10.7567/JJAP.50.03CA03(Journal) ========================================================== Created: 2023-01-05 12:39:20 ConfID: 6693795 CauseID: 1557141649 OtherID: 1363323477 JT: Japanese Journal of Applied Physics MD: Kim,50,3s,302,2011,Pixel-Level Digital-to-Analog Conversion Scheme with Compensation of Thin-Film-Transistor Variations for Compact Integrated Data Drivers of Active Matrix Organic Light Emitting Diodes DOI: 10.1143/JJAP.50.03CC02(Journal) (6693795-N) DOI: 10.7567/JJAP.50.03CC02(Journal) ========================================================== Created: 2023-01-05 12:39:17 ConfID: 6693792 CauseID: 1557141642 OtherID: 1363323501 JT: Japanese Journal of Applied Physics MD: Kwak,50,3s,305,2011,Organic Light-Emitting Diode-on-Silicon Pixel Circuit Using the Source Follower Structure with Active Load for Microdisplays DOI: 10.1143/JJAP.50.03CC05(Journal) (6693792-N) DOI: 10.7567/JJAP.50.03CC05(Journal) ========================================================== Created: 2023-01-05 12:39:17 ConfID: 6693793 CauseID: 1557141643 OtherID: 1363323346 JT: Japanese Journal of Applied Physics MD: Heya,50,2r,28002,2011,Structural Property of Pentacene Film Prepared by Hydrogen Chemical Transport Deposition DOI: 10.1143/JJAP.50.028002(Journal) (6693793-N) DOI: 10.7567/JJAP.50.028002(Journal) ========================================================== Created: 2023-01-05 12:40:15 ConfID: 6693806 CauseID: 1557141787 OtherID: 1363323302 JT: Japanese Journal of Applied Physics MD: Duy,50,2r,24101,2011,Effect of Series Resistance on Field-Effect Mobility at Varying Channel Lengths and Investigation into the Enhancement of Source/Drain Metallized Thin-Film Transistor Characteristics DOI: 10.1143/JJAP.50.024101(Journal) (6693806-N) DOI: 10.7567/JJAP.50.024101(Journal) ========================================================== Created: 2023-01-05 12:40:16 ConfID: 6693807 CauseID: 1557141788 OtherID: 1363323278 JT: Japanese Journal of Applied Physics MD: Thalmayr,50,2r,20211,2011,Simplified Boundary Modeling for Resonating Structures by Scattering Analysis DOI: 10.1143/JJAP.50.020211(Journal) (6693807-N) DOI: 10.7567/JJAP.50.020211(Journal) ========================================================== Created: 2023-01-05 12:40:13 ConfID: 6693804 CauseID: 1557141778 OtherID: 1363323276 JT: Japanese Journal of Applied Physics MD: Mizue,50,2r,21001,2011,Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface DOI: 10.1143/JJAP.50.021001(Journal) (6693804-N) DOI: 10.7567/JJAP.50.021001(Journal) ========================================================== Created: 2023-01-05 12:40:14 ConfID: 6693805 CauseID: 1557141780 OtherID: 1363323292 JT: Japanese Journal of Applied Physics MD: Shirai,50,2r,21402,2011,Crystallization Behavior of Sputtered Amorphous Silicon Films by Blue-Multi-Laser-Diode Annealing DOI: 10.1143/JJAP.50.021402(Journal) (6693805-N) DOI: 10.7567/JJAP.50.021402(Journal) ========================================================== Created: 2023-01-05 12:39:32 ConfID: 6693802 CauseID: 1557141677 OtherID: 1363323356 JT: Japanese Journal of Applied Physics MD: Tuncdemir,50,2r,27301,2011,Design of Translation Rotary Ultrasonic Motor with Slanted Piezoelectric Ceramics DOI: 10.1143/JJAP.50.027301(Journal) (6693802-N) DOI: 10.7567/JJAP.50.027301(Journal) ========================================================== Created: 2023-01-05 12:40:10 ConfID: 6693803 CauseID: 1557141775 OtherID: 1363323279 JT: Japanese Journal of Applied Physics MD: Han,50,2r,20207,2011,Nanosized Structural Anti-Reflection Layer for Thin Film Solar Cells DOI: 10.1143/JJAP.50.020207(Journal) (6693803-N) DOI: 10.7567/JJAP.50.020207(Journal) ========================================================== Created: 2023-01-05 12:39:28 ConfID: 6693800 CauseID: 1557141666 OtherID: 1363323490 JT: Japanese Journal of Applied Physics MD: Park,50,3s,308,2011,Embedded Touch Sensing Circuit Using Mutual Capacitance for Active-Matrix Organic Light-Emitting Diode Display DOI: 10.1143/JJAP.50.03CC08(Journal) (6693800-N) DOI: 10.7567/JJAP.50.03CC08(Journal) ========================================================== Created: 2023-01-05 12:39:30 ConfID: 6693801 CauseID: 1557141674 OtherID: 1363323347 JT: Japanese Journal of Applied Physics MD: Kimura,50,2r,26601,2011,Observation of Biospecimens at Cryotemperatures with Soft X-ray Microscope DOI: 10.1143/JJAP.50.026601(Journal) (6693801-N) DOI: 10.7567/JJAP.50.026601(Journal) ========================================================== Created: 2023-01-05 12:40:22 ConfID: 6693814 CauseID: 1557141805 OtherID: 1363323289 JT: Japanese Journal of Applied Physics MD: Kajimoto,50,2r,21601,2011,Large Memory Effect and High Carrier Mobility of Organic Field-Effect Transistors Using Semiconductor Colloidal Nano-Dots Dispersed in Polymer Buffer Layers DOI: 10.1143/JJAP.50.021601(Journal) (6693814-N) DOI: 10.7567/JJAP.50.021601(Journal) ========================================================== Created: 2023-01-05 12:40:23 ConfID: 6693815 CauseID: 1557141806 OtherID: 1363323304 JT: Japanese Journal of Applied Physics MD: Zheng,50,2r,21701,2011,Effects of Surface Free Energy on Orientational Assembly of Hexaazatrinaphtalene-Based Discotic Mesogen in Sandwich-Type Structure DOI: 10.1143/JJAP.50.021701(Journal) (6693815-N) DOI: 10.7567/JJAP.50.021701(Journal) ========================================================== Created: 2023-01-05 12:40:21 ConfID: 6693812 CauseID: 1557141803 OtherID: 1363323493 JT: Japanese Journal of Applied Physics MD: Hatano,50,3s,306,2011,3.4-Inch Quarter High Definition Flexible Active Matrix Organic Light Emitting Display with Oxide Thin Film Transistor DOI: 10.1143/JJAP.50.03CC06(Journal) (6693812-N) DOI: 10.7567/JJAP.50.03CC06(Journal) ========================================================== Created: 2023-01-05 12:40:22 ConfID: 6693813 CauseID: 1557141804 OtherID: 1363323290 JT: Japanese Journal of Applied Physics MD: Wei,50,2r,22701,2011,Theoretical Analysis of Length Measurement Using Interference of Multiple Pulse Trains of a Femtosecond Optical Frequency Comb DOI: 10.1143/JJAP.50.022701(Journal) (6693813-N) DOI: 10.7567/JJAP.50.022701(Journal) ========================================================== Created: 2023-01-05 12:40:20 ConfID: 6693810 CauseID: 1557141801 OtherID: 1363323297 JT: Japanese Journal of Applied Physics MD: Jedema,50,2r,24102,2011,Influence of Surrounding Dielectrics on the Data Retention Time of Doped Sb2Te Phase Change Material DOI: 10.1143/JJAP.50.024102(Journal) (6693810-N) DOI: 10.7567/JJAP.50.024102(Journal) ========================================================== Created: 2023-01-05 12:40:21 ConfID: 6693811 CauseID: 1557141802 OtherID: 1363323325 JT: Japanese Journal of Applied Physics MD: Jin,50,2r,26401,2011,Electron Cloud Effects in Cornell Electron Storage Ring Test Accelerator and International Linear Collider Damping Ring DOI: 10.1143/JJAP.50.026401(Journal) (6693811-N) DOI: 10.7567/JJAP.50.026401(Journal) ========================================================== Created: 2023-01-05 12:40:16 ConfID: 6693808 CauseID: 1557141789 OtherID: 1363323298 JT: Japanese Journal of Applied Physics MD: Li,50,2r,21602,2011,Influence of Contact Resistance on Effective Mobility in Organic Thin Film Transistor DOI: 10.1143/JJAP.50.021602(Journal) (6693808-N) DOI: 10.7567/JJAP.50.021602(Journal) ========================================================== Created: 2023-01-05 12:40:17 ConfID: 6693809 CauseID: 1557141791 OtherID: 1363323465 JT: Japanese Journal of Applied Physics MD: Lu,50,3s,305,2011,Thickness Dependence of Electrical Properties for High-k SrTa2O6 Thin Films Fabricated by Sol–Gel Method DOI: 10.1143/JJAP.50.03CA05(Journal) (6693809-N) DOI: 10.7567/JJAP.50.03CA05(Journal) ========================================================== Created: 2023-01-05 12:40:28 ConfID: 6693822 CauseID: 1557141821 OtherID: 1363323471 JT: Japanese Journal of Applied Physics MD: Shin,50,3s,301,2011,Driving Method for Compensating Reliability Problem of Hydrogenated Amorphous Silicon Thin Film Transistors and Image Sticking Phenomenon in Active Matrix Organic Light-Emitting Diode Displays DOI: 10.1143/JJAP.50.03CC01(Journal) (6693822-N) DOI: 10.7567/JJAP.50.03CC01(Journal) ========================================================== Created: 2023-01-05 12:40:29 ConfID: 6693823 CauseID: 1557141822 OtherID: 1363323321 JT: Japanese Journal of Applied Physics MD: Sugiyama,50,2r,25502,2011,Effect of Evaporation on Protein Crystals Grown in Semi-Solid Agarose Hydrogel DOI: 10.1143/JJAP.50.025502(Journal) (6693823-N) DOI: 10.7567/JJAP.50.025502(Journal) ========================================================== Created: 2023-01-05 12:40:27 ConfID: 6693820 CauseID: 1557141819 OtherID: 1363323352 JT: Japanese Journal of Applied Physics MD: Takenaga,50,2r,27001,2011,Charge Accumulation Type Hydrogen Ion Image Sensor with High pH Resolution DOI: 10.1143/JJAP.50.027001(Journal) (6693820-N) DOI: 10.7567/JJAP.50.027001(Journal) ========================================================== Created: 2023-01-05 12:40:28 ConfID: 6693821 CauseID: 1557141820 OtherID: 1363323299 JT: Japanese Journal of Applied Physics MD: Ono,50,2r,23001,2011,Effect of O- Ion Beam Irradiation during RF-Magnetron Sputtering on Characteristics of CoFeB–MgO Magnetic Tunnel Junctions DOI: 10.1143/JJAP.50.023001(Journal) (6693821-N) DOI: 10.7567/JJAP.50.023001(Journal) ========================================================== Created: 2023-01-05 12:40:25 ConfID: 6693818 CauseID: 1557141816 OtherID: 1363323283 JT: Japanese Journal of Applied Physics MD: Zhang,50,2r,20202,2011,Mechanism of Oxidation on Si2Sb2Te5 Phase Change Material and Its Application DOI: 10.1143/JJAP.50.020202(Journal) (6693818-N) DOI: 10.7567/JJAP.50.020202(Journal) ========================================================== Created: 2023-01-05 12:40:26 ConfID: 6693819 CauseID: 1557141817 OtherID: 1363323338 JT: Japanese Journal of Applied Physics MD: Nakamura,50,2r,26504,2011,Fabrication of 70-nm-Pitch Two-Level Interconnects by using Extreme Ultraviolet Lithography DOI: 10.1143/JJAP.50.026504(Journal) (6693819-N) DOI: 10.7567/JJAP.50.026504(Journal) ========================================================== Created: 2023-01-05 12:40:24 ConfID: 6693816 CauseID: 1557141807 OtherID: 1363323296 JT: Japanese Journal of Applied Physics MD: Ishizawa,50,2r,22502,2011,Efficient Carrier-Envelope Offset Locking with a Simplified Configuration of an f-to-2f Interferometer DOI: 10.1143/JJAP.50.022502(Journal) (6693816-N) DOI: 10.7567/JJAP.50.022502(Journal) ========================================================== Created: 2023-01-05 12:40:24 ConfID: 6693817 CauseID: 1557141808 OtherID: 1363323282 JT: Japanese Journal of Applied Physics MD: Ueda,50,2r,20208,2011,Charge-Sensitive Infrared Phototransistors Developed in the Wavelength Range of 10–50 µm DOI: 10.1143/JJAP.50.020208(Journal) (6693817-N) DOI: 10.7567/JJAP.50.020208(Journal) ========================================================== Created: 2023-01-05 12:38:36 ConfID: 6693766 CauseID: 1557141545 OtherID: 1363323301 JT: Japanese Journal of Applied Physics MD: Huang,50,2r,21702,2011,Effect of the Polyimide Concentration on the Memory Stability of the Silica-Nanoparticle-Doped Hybrid Aligned Nematic Cell DOI: 10.1143/JJAP.50.021702(Journal) (6693766-N) DOI: 10.7567/JJAP.50.021702(Journal) ========================================================== Created: 2023-01-05 12:38:38 ConfID: 6693767 CauseID: 1557141549 OtherID: 1363323294 JT: Japanese Journal of Applied Physics MD: Choi,50,2r,22401,2011,High-Speed Imaging of Broadband Multiplex Coherent Anti-Stokes Raman Scattering Microscopy Using a Supercontinuum Source DOI: 10.1143/JJAP.50.022401(Journal) (6693767-N) DOI: 10.7567/JJAP.50.022401(Journal) ========================================================== Created: 2023-01-05 12:38:29 ConfID: 6693764 CauseID: 1557141521 OtherID: 1363323476 JT: Japanese Journal of Applied Physics MD: Kimura,50,3s,301,2011,Extraction Technique of Trap Densities in Thin Films and at Insulator Interfaces of Thin-Film Transistors DOI: 10.1143/JJAP.50.03CB01(Journal) (6693764-N) DOI: 10.7567/JJAP.50.03CB01(Journal) ========================================================== Created: 2023-01-05 12:38:27 ConfID: 6693765 CauseID: 1557141526 OtherID: 1363323314 JT: Japanese Journal of Applied Physics MD: Hirano,50,2r,26402,2011,X-ray Angle-Resolved Computed Tomography Using an Asymmetric Analyzer Crystal DOI: 10.1143/JJAP.50.026402(Journal) (6693765-N) DOI: 10.7567/JJAP.50.026402(Journal) ========================================================== Created: 2023-01-05 12:38:15 ConfID: 6693762 CauseID: 1557141496 OtherID: 1363323324 JT: Japanese Journal of Applied Physics MD: Nishimura,50,2r,26501,2011,Fabrication of Electron Passes in Nano-TiO2 Layer by High-Velocity Oxy-Fuel Method for Dye-Sensitized Solar Cells DOI: 10.1143/JJAP.50.026501(Journal) (6693762-N) DOI: 10.7567/JJAP.50.026501(Journal) ========================================================== Created: 2023-01-05 12:38:16 ConfID: 6693763 CauseID: 1557141497 OtherID: 1363323474 JT: Japanese Journal of Applied Physics MD: Hung,50,3s,307,2011,Employ Present Five Masks Amorphous Silicon Thin-Film Transistor Design and Process Flow to Realize 5-in. InGaZnO Active-Matrix Liquid Crystal Display with Improved Stress Stability DOI: 10.1143/JJAP.50.03CB07(Journal) (6693763-N) DOI: 10.7567/JJAP.50.03CB07(Journal) ========================================================== Created: 2023-01-05 12:38:13 ConfID: 6693760 CauseID: 1557141487 OtherID: 1363323467 JT: Japanese Journal of Applied Physics MD: Kim,50,3s,303,2011,Decoder-Type Gate Driver Circuits Fabricated with Amorphous Silicon Thin-Film Transistors for Active Matrix Displays DOI: 10.1143/JJAP.50.03CC03(Journal) (6693760-N) DOI: 10.7567/JJAP.50.03CC03(Journal) ========================================================== Created: 2023-01-05 12:38:14 ConfID: 6693761 CauseID: 1557141490 OtherID: 1363323340 JT: Japanese Journal of Applied Physics MD: Ueki,50,2r,26503,2011,Method to Evaluate the Influence of Etching Damage on Microcantilever Surface on Its Mechanical Properties DOI: 10.1143/JJAP.50.026503(Journal) (6693761-N) DOI: 10.7567/JJAP.50.026503(Journal) ========================================================== Created: 2023-01-05 12:38:46 ConfID: 6693774 CauseID: 1557141570 OtherID: 1363323274 JT: Japanese Journal of Applied Physics MD: Yamasaki,50,2r,20205,2011,Solution Flow Assisted Fabrication Method of Oriented π-Conjugated Polymer Films by Using Geometrically-Asymmetric Sandwich Structures DOI: 10.1143/JJAP.50.020205(Journal) (6693774-N) DOI: 10.7567/JJAP.50.020205(Journal) ========================================================== Created: 2023-01-05 12:38:46 ConfID: 6693775 CauseID: 1557141571 OtherID: 1363323271 JT: Japanese Journal of Applied Physics MD: Han,50,2r,20212,2011,Effects of the pH Level on the Phosphor Characteristics of Zn2SiO4:Mn2+ Coated with SiO2 Nanoparticles DOI: 10.1143/JJAP.50.020212(Journal) (6693775-N) DOI: 10.7567/JJAP.50.020212(Journal) ========================================================== Created: 2023-01-05 12:38:42 ConfID: 6693772 CauseID: 1557141558 OtherID: 1363323343 JT: Japanese Journal of Applied Physics MD: Gurdal,50,2r,27101,2011,High Power (Na0.5K0.5)NbO3-Based Lead-Free Piezoelectric Transformer DOI: 10.1143/JJAP.50.027101(Journal) (6693772-N) DOI: 10.7567/JJAP.50.027101(Journal) ========================================================== Created: 2023-01-05 12:38:42 ConfID: 6693773 CauseID: 1557141559 OtherID: 1363323492 JT: Japanese Journal of Applied Physics MD: Lin,50,3s,307,2011,Design and Implementation of Readout Circuit with Threshold Voltage Compensation on Glass Substrate for Touch Panel Applications DOI: 10.1143/JJAP.50.03CC07(Journal) (6693773-N) DOI: 10.7567/JJAP.50.03CC07(Journal) ========================================================== Created: 2023-01-05 12:38:41 ConfID: 6693770 CauseID: 1557141556 OtherID: 1363323472 JT: Japanese Journal of Applied Physics MD: Furuta,50,3s,309,2011,Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors with a SiOx/SiNx-Stacked Gate Insulator DOI: 10.1143/JJAP.50.03CB09(Journal) (6693770-N) DOI: 10.7567/JJAP.50.03CB09(Journal) ========================================================== Created: 2023-01-05 12:38:41 ConfID: 6693771 CauseID: 1557141557 OtherID: 1363323281 JT: Japanese Journal of Applied Physics MD: Okada,50,2r,20203,2011,Characterization Method for the Relaxation Process of Metastable Defect States in Cu(In,Ga)Se2 Thin Films with Photoisothermal Capacitance Transient Spectroscopy DOI: 10.1143/JJAP.50.020203(Journal) (6693771-N) DOI: 10.7567/JJAP.50.020203(Journal) ========================================================== Created: 2023-01-05 12:38:39 ConfID: 6693768 CauseID: 1557141550 OtherID: 1363323328 JT: Japanese Journal of Applied Physics MD: Kozawa,50,2r,26502,2011,Optimum Dissolution Point of Chemically Amplified Resists in Terms of Trade-Off Relationships between Resolution, Line Edge Roughness, and Sensitivity DOI: 10.1143/JJAP.50.026502(Journal) (6693768-N) DOI: 10.7567/JJAP.50.026502(Journal) ========================================================== Created: 2023-01-05 12:39:04 ConfID: 6693782 CauseID: 1557141608 OtherID: 1363323269 JT: Japanese Journal of Applied Physics MD: Ogawa,50,2r,21002,2011,Variation of Chemical and Photoluminescence Properties of Mg-Doped GaN Caused by High-Temperature Process DOI: 10.1143/JJAP.50.021002(Journal) (6693782-N) DOI: 10.7567/JJAP.50.021002(Journal) ========================================================== Created: 2023-01-05 12:39:08 ConfID: 6693783 CauseID: 1557141618 OtherID: 1363323300 JT: Japanese Journal of Applied Physics MD: Saito,50,2r,21503,2011,First-Principles Study on Structural Properties of GeO2 and SiO2 under Compression and Expansion Pressure DOI: 10.1143/JJAP.50.021503(Journal) (6693783-N) DOI: 10.7567/JJAP.50.021503(Journal) ========================================================== Created: 2023-01-05 12:39:02 ConfID: 6693780 CauseID: 1557141605 OtherID: 1363323270 JT: Japanese Journal of Applied Physics MD: Hara,50,2r,21401,2011,Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline Silicon Thin-Film Transistors on Glass Substrate Using Back-Surface Exposure DOI: 10.1143/JJAP.50.021401(Journal) (6693780-N) DOI: 10.7567/JJAP.50.021401(Journal) ========================================================== Created: 2023-01-05 12:39:02 ConfID: 6693781 CauseID: 1557141606 OtherID: 1363323272 JT: Japanese Journal of Applied Physics MD: Okumura,50,2r,20206,2011,Lateral Junction Waveguide-Type Photodiode Grown on Semi-Insulating InP Substrate DOI: 10.1143/JJAP.50.020206(Journal) (6693781-N) DOI: 10.7567/JJAP.50.020206(Journal) ========================================================== Created: 2023-01-05 12:38:56 ConfID: 6693778 CauseID: 1557141590 OtherID: 1363323273 JT: Japanese Journal of Applied Physics MD: Kawaguchi,50,2r,20209,2011,Electric Field Induced Carrier Sweep-Out in Tandem InGaN Multi-Quantum-Well Self-Pulsating Laser Diodes DOI: 10.1143/JJAP.50.020209(Journal) (6693778-N) DOI: 10.7567/JJAP.50.020209(Journal) ========================================================== Created: 2023-01-05 12:39:01 ConfID: 6693779 CauseID: 1557141604 OtherID: 1363323265 JT: Japanese Journal of Applied Physics MD: Sakata,50,2r,20216,2011,Continuous Monitoring of Electrical Activity of Pancreatic β-Cells Using Semiconductor-Based Biosensing Devices DOI: 10.1143/JJAP.50.020216(Journal) (6693779-N) DOI: 10.7567/JJAP.50.020216(Journal) ========================================================== Created: 2023-01-05 12:38:51 ConfID: 6693776 CauseID: 1557141582 OtherID: 1363323322 JT: Japanese Journal of Applied Physics MD: Oh,50,2r,25001,2011,Selective Synthesis of SiC and SiOx Nanowires by Direct Microwave Irradiation DOI: 10.1143/JJAP.50.025001(Journal) (6693776-N) DOI: 10.7567/JJAP.50.025001(Journal) ========================================================== Created: 2023-01-05 12:38:53 ConfID: 6693777 CauseID: 1557141584 OtherID: 1363323315 JT: Japanese Journal of Applied Physics MD: Inai,50,2r,26001,2011,An EDDY/Particle-in-Cell Simulation of Erosion of Plasma Facing Walls Bombarded by a Collisional Plasma DOI: 10.1143/JJAP.50.026001(Journal) (6693777-N) DOI: 10.7567/JJAP.50.026001(Journal) ========================================================== Created: 2023-01-05 12:39:19 ConfID: 6693790 CauseID: 1557141637 OtherID: 1363323463 JT: Japanese Journal of Applied Physics MD: Tsuchiya,50,3s,304,2011,Water-Related Instability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Caused by Self-Heating DOI: 10.1143/JJAP.50.03CB04(Journal) (6693790-N) DOI: 10.7567/JJAP.50.03CB04(Journal) ========================================================== Created: 2023-01-05 12:39:16 ConfID: 6693791 CauseID: 1557141641 OtherID: 1363323317 JT: Japanese Journal of Applied Physics MD: Son,50,2r,25803,2011,Characteristics of Vanadium Oxide Thin Films Prepared by Metal–Organic Decomposition for Bolometer Detectors DOI: 10.1143/JJAP.50.025803(Journal) (6693791-N) DOI: 10.7567/JJAP.50.025803(Journal) ========================================================== Created: 2023-01-05 12:39:13 ConfID: 6693788 CauseID: 1557141630 OtherID: 1363323331 JT: Japanese Journal of Applied Physics MD: Yamamoto,50,2r,24201,2011,New Driving Scheme to Improve Hysteresis Characteristics of Organic Thin Film Transistor-Driven Active-Matrix Organic Light Emitting Diode Display DOI: 10.1143/JJAP.50.024201(Journal) (6693788-N) DOI: 10.7567/JJAP.50.024201(Journal) ========================================================== Created: 2023-01-05 12:39:14 ConfID: 6693789 CauseID: 1557141632 OtherID: 1363323473 JT: Japanese Journal of Applied Physics MD: Choi,50,3s,304,2011,Voltage Drop Compensation Method for Active Matrix Organic Light Emitting Diode Displays DOI: 10.1143/JJAP.50.03CC04(Journal) (6693789-N) DOI: 10.7567/JJAP.50.03CC04(Journal) ========================================================== Created: 2023-01-05 12:39:12 ConfID: 6693786 CauseID: 1557141628 OtherID: 1363323466 JT: Japanese Journal of Applied Physics MD: Lee,50,3s,304,2011,Patterned Single-Wall Carbon Nanotube Transparent Conducting Films for Liquid Crystal Switching Electrodes DOI: 10.1143/JJAP.50.03CA04(Journal) (6693786-N) DOI: 10.7567/JJAP.50.03CA04(Journal) ========================================================== Created: 2023-01-05 12:39:12 ConfID: 6693787 CauseID: 1557141629 OtherID: 1363323353 JT: Japanese Journal of Applied Physics MD: Sugihara,50,2r,28001,2011,Preparation of Highly-Oriented Co2MnSi Films on a Non-Single-Crystalline Substrate Using a Titanium–Nitride Buffer Layer DOI: 10.1143/JJAP.50.028001(Journal) (6693787-N) DOI: 10.7567/JJAP.50.028001(Journal) ========================================================== Created: 2023-01-05 12:39:09 ConfID: 6693784 CauseID: 1557141619 OtherID: 1363323275 JT: Japanese Journal of Applied Physics MD: Ma,50,2r,20215,2011,Thickness-Dependent Structural and Optical Properties of VO2 Thin Films DOI: 10.1143/JJAP.50.020215(Journal) (6693784-N) DOI: 10.7567/JJAP.50.020215(Journal) ========================================================== Created: 2023-01-05 12:39:11 ConfID: 6693785 CauseID: 1557141627 OtherID: 1363323329 JT: Japanese Journal of Applied Physics MD: Yoshino,50,2r,26201,2011,Improvement in Discharge Delay Time by Accumulating Positive Wall Charges on Cathode MgO Protective Layer Surface in Alternating-Current Plasma Display Panels DOI: 10.1143/JJAP.50.026201(Journal) (6693785-N) DOI: 10.7567/JJAP.50.026201(Journal) ========================================================== Created: 2023-02-01 12:02:38 ConfID: 6715238 CauseID: 1560032996 OtherID: 1363324696 JT: Japanese Journal of Applied Physics MD: Ziegler,51,10s,1003,2012,Influences of p- and n-Doped Czochralski Base Material on the Performance of Silicon Based Heterojunction Solar Cells DOI: 10.1143/JJAP.51.10NA03(Journal) (6715238-N) DOI: 10.7567/JJAP.51.10NA03(Journal) ========================================================== Created: 2023-02-01 12:00:48 ConfID: 6715239 CauseID: 1560032677 OtherID: 1363321434 JT: Japanese Journal of Applied Physics MD: Oikawa,51,9s1,904,2012,Film Thickness Dependence of Ferroelectric Properties of (111)-Oriented Epitaxial Bi(Mg1/2Ti1/2)O3 Films DOI: 10.1143/JJAP.51.09LA04(Journal) (6715239-N) DOI: 10.7567/JJAP.51.09LA04(Journal) ========================================================== Created: 2023-02-01 12:02:33 ConfID: 6715236 CauseID: 1560032984 OtherID: 1363321543 JT: Japanese Journal of Applied Physics MD: Jamail,51,9s2,903,2012,Conductivity Variation Observed by Polarization and Depolarization Current Measurements of High-Voltage Equipment Insulation System DOI: 10.1143/JJAP.51.09MG03(Journal) (6715236-N) DOI: 10.7567/JJAP.51.09MG03(Journal) ========================================================== Created: 2023-02-01 12:00:47 ConfID: 6715237 CauseID: 1560032675 OtherID: 1363321439 JT: Japanese Journal of Applied Physics MD: Matsuda,51,9s1,903,2012,Electrical Properties of Lead-Free Ferroelectric Mn-Doped K0.5Na0.5NbO3–CaZrO3 Thin Films Prepared by Chemical Solution Deposition DOI: 10.1143/JJAP.51.09LA03(Journal) (6715237-N) DOI: 10.7567/JJAP.51.09LA03(Journal) ========================================================== Created: 2023-02-01 12:00:52 ConfID: 6715246 CauseID: 1560032689 OtherID: 1363321468 JT: Japanese Journal of Applied Physics MD: Tanaka,51,9s1,903,2012,Characterization of 57Fe-Enriched BiFeO3 Thin Films by Mössbauer Spectroscopy DOI: 10.1143/JJAP.51.09LB03(Journal) (6715246-N) DOI: 10.7567/JJAP.51.09LB03(Journal) ========================================================== Created: 2023-02-01 12:00:53 ConfID: 6715247 CauseID: 1560032690 OtherID: 1363321431 JT: Japanese Journal of Applied Physics MD: Suzuki,51,9s1,917,2012,Polarization Properties of Bismuth Strontium Tantalate Ceramic Films Deposited by Aerosol Deposition Method DOI: 10.1143/JJAP.51.09LA17(Journal) (6715247-N) DOI: 10.7567/JJAP.51.09LA17(Journal) ========================================================== Created: 2023-02-01 12:00:51 ConfID: 6715244 CauseID: 1560032686 OtherID: 1363321433 JT: Japanese Journal of Applied Physics MD: Tomioka,51,9s1,912,2012,Composition Dependence of Piezoelectric Properties of Pb(Zr,Ti)O3 Films Prepared by Combinatorial Sputtering DOI: 10.1143/JJAP.51.09LA12(Journal) (6715244-N) DOI: 10.7567/JJAP.51.09LA12(Journal) ========================================================== Created: 2023-02-01 12:00:50 ConfID: 6715243 CauseID: 1560032685 OtherID: 1363321445 JT: Japanese Journal of Applied Physics MD: Thanh,51,9s1,909,2012,Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 Stacked Gate Insulator DOI: 10.1143/JJAP.51.09LA09(Journal) (6715243-N) DOI: 10.7567/JJAP.51.09LA09(Journal) ========================================================== Created: 2023-02-01 12:06:18 ConfID: 6715240 CauseID: 1560033690 OtherID: 1363324823 JT: Japanese Journal of Applied Physics MD: Roy,51,10s,1001,2012,Accuracy of Energy Yield Prediction of Photovoltaic Modules DOI: 10.1143/JJAP.51.10NF01(Journal) (6715240-N) DOI: 10.7567/JJAP.51.10NF01(Journal) ========================================================== Created: 2023-02-01 12:06:22 ConfID: 6715241 CauseID: 1560033710 OtherID: 1363324774 JT: Japanese Journal of Applied Physics MD: Victoria,51,10s,1006,2012,Characterizing FluidReflex Optical Transfer Function DOI: 10.1143/JJAP.51.10ND06(Journal) (6715241-N) DOI: 10.7567/JJAP.51.10ND06(Journal) ========================================================== Created: 2023-02-01 12:00:57 ConfID: 6715254 CauseID: 1560032702 OtherID: 1363321455 JT: Japanese Journal of Applied Physics MD: Hoshina,51,9s1,904,2012,Grain Size Effect on Dielectric Properties of Ba(Zr,Ti)O3 Ceramics DOI: 10.1143/JJAP.51.09LC04(Journal) (6715254-N) DOI: 10.7567/JJAP.51.09LC04(Journal) ========================================================== Created: 2023-02-01 12:00:59 ConfID: 6715255 CauseID: 1560032706 OtherID: 1363321453 JT: Japanese Journal of Applied Physics MD: Kim,51,9s1,907,2012,Percolative BaTiO3/Carbon-Nanotube Composite Films Employing Aerosol Deposition DOI: 10.1143/JJAP.51.09LC07(Journal) (6715255-N) DOI: 10.7567/JJAP.51.09LC07(Journal) ========================================================== Created: 2023-02-01 12:00:56 ConfID: 6715252 CauseID: 1560032700 OtherID: 1363321449 JT: Japanese Journal of Applied Physics MD: Nakao,51,9s1,906,2012,Fabrication of 100-Oriented (Na0.5K0.5)NbO3–BaZrO3–(Bi0.5Li0.5)TiO3 Films on Si Substrate Using LaNiO3 Layer DOI: 10.1143/JJAP.51.09LA06(Journal) (6715252-N) DOI: 10.7567/JJAP.51.09LA06(Journal) ========================================================== Created: 2023-02-01 12:00:56 ConfID: 6715253 CauseID: 1560032701 OtherID: 1363321454 JT: Japanese Journal of Applied Physics MD: Kawahara,51,9s1,904,2012,Control of Crystal Structure of BiFeO3 Epitaxial Thin Films by Adjusting Growth Conditions and Piezoelectric Properties DOI: 10.1143/JJAP.51.09LB04(Journal) (6715253-N) DOI: 10.7567/JJAP.51.09LB04(Journal) ========================================================== Created: 2023-02-01 12:00:54 ConfID: 6715250 CauseID: 1560032692 OtherID: 1363321451 JT: Japanese Journal of Applied Physics MD: Doi,51,9s1,915,2012,The Orientation and Grain Texture Effect on Life Time Reliability of Sol–Gel Derived PbZr0.52Ti0.48O3 Films DOI: 10.1143/JJAP.51.09LA15(Journal) (6715250-N) DOI: 10.7567/JJAP.51.09LA15(Journal) ========================================================== Created: 2023-02-01 12:00:54 ConfID: 6715251 CauseID: 1560032693 OtherID: 1363321443 JT: Japanese Journal of Applied Physics MD: Ogawa,51,9s1,916,2012,Dielectric Property of Silicate-Doped CaBi4Ti4O15 Thin Films DOI: 10.1143/JJAP.51.09LA16(Journal) (6715251-N) DOI: 10.7567/JJAP.51.09LA16(Journal) ========================================================== Created: 2023-02-01 12:00:53 ConfID: 6715249 CauseID: 1560032691 OtherID: 1363321446 JT: Japanese Journal of Applied Physics MD: Tai,51,9s1,919,2012,Investigation of Sputtering Damage in SrRuO3 Films Prepared by Sputtering with Raman and X-ray Photoemission Spectroscopies DOI: 10.1143/JJAP.51.09LA19(Journal) (6715249-N) DOI: 10.7567/JJAP.51.09LA19(Journal) ========================================================== Created: 2023-02-01 12:01:02 ConfID: 6715262 CauseID: 1560032715 OtherID: 1363321460 JT: Japanese Journal of Applied Physics MD: Yabuta,51,9s1,904,2012,Microstructure of BaTiO3–Bi(Mg1/2Ti1/2)O3–BiFeO3 Piezoelectric Ceramics DOI: 10.1143/JJAP.51.09LD04(Journal) (6715262-N) DOI: 10.7567/JJAP.51.09LD04(Journal) ========================================================== Created: 2023-02-01 12:01:02 ConfID: 6715263 CauseID: 1560032716 OtherID: 1363321437 JT: Japanese Journal of Applied Physics MD: Shiraki,51,9s1,905,2012,Piezoelectric, Dielectric, and Structural Properties of Ternary (K0.5Na0.5)Nb0.95O3–BaTiO3–BaZrO3 Thin Films Prepared on Pt/TiOx/SiO2/Si Substrates by the Chemical Solution Deposition Method DOI: 10.1143/JJAP.51.09LA05(Journal) (6715263-N) DOI: 10.7567/JJAP.51.09LA05(Journal) ========================================================== Created: 2023-02-01 12:31:04 ConfID: 6715260 CauseID: 1560037780 OtherID: 1363320377 JT: Japanese Journal of Applied Physics MD: Mohamed,51,2r,28003,2012,Streak Observation System for DC Pre-breakdown Using an Image Guide Scope DOI: 10.1143/JJAP.51.028003(Journal) (6715260-N) DOI: 10.7567/JJAP.51.028003(Journal) ========================================================== Created: 2023-02-01 12:01:01 ConfID: 6715261 CauseID: 1560032714 OtherID: 1363321448 JT: Japanese Journal of Applied Physics MD: Nakajima,51,9s1,910,2012,Effects of A-Site Occupancy of Bismuth Ions on the Dielectric Tunable Properties of Pyrochlore Bismuth Zinc Niobate Films DOI: 10.1143/JJAP.51.09LA10(Journal) (6715261-N) DOI: 10.7567/JJAP.51.09LA10(Journal) ========================================================== Created: 2023-02-01 12:01:01 ConfID: 6715258 CauseID: 1560032713 OtherID: 1363321466 JT: Japanese Journal of Applied Physics MD: Ogawa,51,9s1,903,2012,Poling Field Dependence of Longitudinal and Transverse Wave Velocities, Young's Modulus, and Poisson's Ratio in Piezoelectric Ceramics DOI: 10.1143/JJAP.51.09LD03(Journal) (6715258-N) DOI: 10.7567/JJAP.51.09LD03(Journal) ========================================================== Created: 2023-02-01 12:30:49 ConfID: 6715259 CauseID: 1560037707 OtherID: 1363320505 JT: Japanese Journal of Applied Physics MD: Ono,51,3r,30202,2012,Polarization Imaging Screen Using Vector Gratings Fabricated by Photocrosslinkable Polymer Liquid Crystals DOI: 10.1143/JJAP.51.030202(Journal) (6715259-N) DOI: 10.7567/JJAP.51.030202(Journal) ========================================================== Created: 2023-02-01 12:00:59 ConfID: 6715256 CauseID: 1560032707 OtherID: 1363321471 JT: Japanese Journal of Applied Physics MD: Ishii,51,9s1,902,2012,Orientation Control of (Sr,Ca)2NaNb5O15 Ceramics by Spin-Forming-Extended Method DOI: 10.1143/JJAP.51.09LC02(Journal) (6715256-N) DOI: 10.7567/JJAP.51.09LC02(Journal) ========================================================== Created: 2023-02-01 12:01:00 ConfID: 6715257 CauseID: 1560032712 OtherID: 1363321441 JT: Japanese Journal of Applied Physics MD: Fujisawa,51,9s1,907,2012,Size Dependence of Ferroelectric Polarization in PbTiO3 Nanoislands DOI: 10.1143/JJAP.51.09LA07(Journal) (6715257-N) DOI: 10.7567/JJAP.51.09LA07(Journal) ========================================================== Created: 2023-02-01 12:02:09 ConfID: 6715366 CauseID: 1560032912 OtherID: 1363321522 JT: Japanese Journal of Applied Physics MD: Jang,51,9s2,901,2012,High Mobility P-Channel Thin-Film Transistors with Ultralarge-Grain Polycrystalline Silicon Formed Using Nickel-Induced Crystallization DOI: 10.1143/JJAP.51.09MF01(Journal) (6715366-N) DOI: 10.7567/JJAP.51.09MF01(Journal) ========================================================== Created: 2023-02-01 12:02:06 ConfID: 6715367 CauseID: 1560032913 OtherID: 1363321492 JT: Japanese Journal of Applied Physics MD: Ikeda,51,9s2,901,2012,Preisach Polarization–Electric Field Hysteresis Model with Iteration Method DOI: 10.1143/JJAP.51.09MD01(Journal) (6715367-N) DOI: 10.7567/JJAP.51.09MD01(Journal) ========================================================== Created: 2023-02-01 12:02:03 ConfID: 6715364 CauseID: 1560032899 OtherID: 1363321502 JT: Japanese Journal of Applied Physics MD: Kim,51,9s2,905,2012,Effect of Acetic Acid in TiCl4 Post-Treatment on Nanoporous TiO2 Electrode in Dye-Sensitized Solar Cell DOI: 10.1143/JJAP.51.09MA05(Journal) (6715364-N) DOI: 10.7567/JJAP.51.09MA05(Journal) ========================================================== Created: 2023-02-01 12:02:05 ConfID: 6715365 CauseID: 1560032908 OtherID: 1363321497 JT: Japanese Journal of Applied Physics MD: Kim,51,9s2,901,2012,AlGaN/GaN Schottky Barrier Diode on Si Substrate Employing NiOx/Ni/Au Contact DOI: 10.1143/JJAP.51.09MC01(Journal) (6715365-N) DOI: 10.7567/JJAP.51.09MC01(Journal) ========================================================== Created: 2023-02-01 12:02:04 ConfID: 6715362 CauseID: 1560032894 OtherID: 1363321499 JT: Japanese Journal of Applied Physics MD: Park,51,9s2,905,2012,Ferroelectric and Piezoelectric Properties of Polycrystalline BiFeO3 Thin Films Prepared by Pulsed Laser Deposition under Magnetic Field DOI: 10.1143/JJAP.51.09MD05(Journal) (6715362-N) DOI: 10.7567/JJAP.51.09MD05(Journal) ========================================================== Created: 2023-02-01 12:02:02 ConfID: 6715363 CauseID: 1560032897 OtherID: 1363321495 JT: Japanese Journal of Applied Physics MD: Tran,51,9s2,902,2012,Comparison of Ferroelectric and Strain Properties between BaTiO3- and BaZrO3-Modified Bi1/2(Na0.82K0.18)1/2TiO3 Ceramics DOI: 10.1143/JJAP.51.09MD02(Journal) (6715363-N) DOI: 10.7567/JJAP.51.09MD02(Journal) ========================================================== Created: 2023-02-01 12:01:57 ConfID: 6715360 CauseID: 1560032888 OtherID: 1363321523 JT: Japanese Journal of Applied Physics MD: Nam,51,9s2,904,2012,Electrical Characteristics of Ge25Se75 Thin Films by Ag Ion Doping Methods for Resistance Random Access Memory Applications DOI: 10.1143/JJAP.51.09MF04(Journal) (6715360-N) DOI: 10.7567/JJAP.51.09MF04(Journal) ========================================================== Created: 2023-02-01 12:02:03 ConfID: 6715361 CauseID: 1560032893 OtherID: 1363321496 JT: Japanese Journal of Applied Physics MD: Ullah,51,9s2,907,2012,Dielectric, Piezoelectric Properties and Field-Induced Large Strain of Bi(Zn0.5Ti0.5)O3-Modified Morphotropic Phase Boundary Bi0.5(Na0.82K0.18)0.5TiO3 Piezoelectric Ceramics DOI: 10.1143/JJAP.51.09MD07(Journal) (6715361-N) DOI: 10.7567/JJAP.51.09MD07(Journal) ========================================================== Created: 2023-02-01 12:02:12 ConfID: 6715374 CauseID: 1560032929 OtherID: 1363321519 JT: Japanese Journal of Applied Physics MD: Pin,51,9s2,912,2012,Effects of Oxygen Working Pressure on Structural and Optical Properties of TiO2 Films Grown on Glass Substrate DOI: 10.1143/JJAP.51.09MF12(Journal) (6715374-N) DOI: 10.7567/JJAP.51.09MF12(Journal) ========================================================== Created: 2023-02-01 12:02:16 ConfID: 6715375 CauseID: 1560032939 OtherID: 1363321513 JT: Japanese Journal of Applied Physics MD: Promros,51,9s2,902,2012,Near-Infrared Photodetection of n-Type β-FeSi2/Intrinsic Si/p-Type Si Heterojunctions at Low Temperatures DOI: 10.1143/JJAP.51.09MF02(Journal) (6715375-N) DOI: 10.7567/JJAP.51.09MF02(Journal) ========================================================== Created: 2023-02-01 12:02:11 ConfID: 6715373 CauseID: 1560032928 OtherID: 1363321531 JT: Japanese Journal of Applied Physics MD: Park,51,9s2,914,2012,Design of a Piezoelectric-Driven Tilt Mirror for a Fast Laser Scanner DOI: 10.1143/JJAP.51.09MD14(Journal) (6715373-N) DOI: 10.7567/JJAP.51.09MD14(Journal) ========================================================== Created: 2023-02-01 12:02:13 ConfID: 6715370 CauseID: 1560032924 OtherID: 1363321504 JT: Japanese Journal of Applied Physics MD: Maeda,51,9s2,908,2012,Piezoelectric Properties of Li-Doped (K0.48Na0.52)NbO3 Ceramics Synthesized Using Hydrothermally-Derived KNbO3 and NaNbO3 Fine Powders DOI: 10.1143/JJAP.51.09MD08(Journal) (6715370-N) DOI: 10.7567/JJAP.51.09MD08(Journal) ========================================================== Created: 2023-02-01 12:02:14 ConfID: 6715371 CauseID: 1560032926 OtherID: 1363321516 JT: Japanese Journal of Applied Physics MD: Yuk,51,9s2,903,2012,SiGe Synthesis by Ge Ion Implantation DOI: 10.1143/JJAP.51.09MF03(Journal) (6715371-N) DOI: 10.7567/JJAP.51.09MF03(Journal) ========================================================== Created: 2023-02-01 12:02:07 ConfID: 6715368 CauseID: 1560032915 OtherID: 1363321486 JT: Japanese Journal of Applied Physics MD: Kadota,51,9s1,908,2012,Preisach Modeling of Electric-Field-Induced Strain of Ferroelectric Material Considering 90° Domain Switching DOI: 10.1143/JJAP.51.09LE08(Journal) (6715368-N) DOI: 10.7567/JJAP.51.09LE08(Journal) ========================================================== Created: 2023-02-01 12:02:10 ConfID: 6715369 CauseID: 1560032922 OtherID: 1363321527 JT: Japanese Journal of Applied Physics MD: Oh,51,9s2,913,2012,Study on the Ring Type Stator Design Technique for a Traveling Wave Rotary Type Ultrasonic Motor DOI: 10.1143/JJAP.51.09MD13(Journal) (6715369-N) DOI: 10.7567/JJAP.51.09MD13(Journal) ========================================================== Created: 2023-02-01 12:02:22 ConfID: 6715382 CauseID: 1560032959 OtherID: 1363321542 JT: Japanese Journal of Applied Physics MD: Joo,51,9s2,901,2012,Improved Device Performances in Phosphorescent Organic Light-Emitting Diodes by Microcavity Effects DOI: 10.1143/JJAP.51.09MH01(Journal) (6715382-N) DOI: 10.7567/JJAP.51.09MH01(Journal) ========================================================== Created: 2023-02-01 12:02:29 ConfID: 6715383 CauseID: 1560032969 OtherID: 1363321528 JT: Japanese Journal of Applied Physics MD: Kim,51,9s2,906,2012,A Study of Stacked Buffer Layers for the Epitaxial Growth of Zn0.58Mg0.42O Films on c-Sapphire by Pulsed Laser Deposition DOI: 10.1143/JJAP.51.09MF06(Journal) (6715383-N) DOI: 10.7567/JJAP.51.09MF06(Journal) ========================================================== Created: 2023-02-01 12:02:24 ConfID: 6715380 CauseID: 1560032956 OtherID: 1363321536 JT: Japanese Journal of Applied Physics MD: Park,51,9s2,901,2012,Schottky Barrier Height and S-Parameter of Ti, Cu, Pd, and Pt Contacts on p-Type GaN DOI: 10.1143/JJAP.51.09MK01(Journal) (6715380-N) DOI: 10.7567/JJAP.51.09MK01(Journal) ========================================================== Created: 2023-02-01 12:02:23 ConfID: 6715378 CauseID: 1560032954 OtherID: 1363321509 JT: Japanese Journal of Applied Physics MD: Lee,51,9s2,904,2012,Organic Photovoltaic Cells Employing an Ultrathin Electron Donor of Arylamino-Substituted Fumaronitrile Material DOI: 10.1143/JJAP.51.09MA04(Journal) (6715378-N) DOI: 10.7567/JJAP.51.09MA04(Journal) ========================================================== Created: 2023-02-01 12:02:24 ConfID: 6715379 CauseID: 1560032955 OtherID: 1363321508 JT: Japanese Journal of Applied Physics MD: Moon,51,9s2,902,2012,The Application of Graphene as a Support for Cathode Materials of Metal–Air Batteries DOI: 10.1143/JJAP.51.09MB02(Journal) (6715379-N) DOI: 10.7567/JJAP.51.09MB02(Journal) ========================================================== Created: 2023-02-01 12:02:15 ConfID: 6715376 CauseID: 1560032941 OtherID: 1363321521 JT: Japanese Journal of Applied Physics MD: Chen,51,9s2,911,2012,Dielectric and Piezoelectric Characteristics in Lead-Free Lix(K0.5Na0.5)1-x(Nb0.8Ta0.2)O3 Piezoelectric Ceramics Prepared by Two-Step Calcination Method DOI: 10.1143/JJAP.51.09MD11(Journal) (6715376-N) DOI: 10.7567/JJAP.51.09MD11(Journal) ========================================================== Created: 2023-02-01 12:02:20 ConfID: 6715377 CauseID: 1560032951 OtherID: 1363321538 JT: Japanese Journal of Applied Physics MD: Chen,51,9s2,902,2012,Effect of Rain Drops on Corona Discharge in Alternating Current Transmission Lines with a Corona Cage DOI: 10.1143/JJAP.51.09MG02(Journal) (6715377-N) DOI: 10.7567/JJAP.51.09MG02(Journal) ========================================================== Created: 2023-02-01 12:02:31 ConfID: 6715390 CauseID: 1560032987 OtherID: 1363321515 JT: Japanese Journal of Applied Physics MD: Byeon,51,9s2,912,2012,Effects of Zn Substitution on Dielectric and Piezoelectric Properties of (Na0.54K0.46)0.96Li0.04(Nb0.90Ta0.10)O3 Ceramics DOI: 10.1143/JJAP.51.09MD12(Journal) (6715390-N) DOI: 10.7567/JJAP.51.09MD12(Journal) ========================================================== Created: 2023-02-01 12:02:31 ConfID: 6715391 CauseID: 1560032988 OtherID: 1363321555 JT: Japanese Journal of Applied Physics MD: Ju,51,9s2,901,2012,Thermal Conductivity of Al2O3/Poly(vinyl butyral) Composites DOI: 10.1143/JJAP.51.09ML01(Journal) (6715391-N) DOI: 10.7567/JJAP.51.09ML01(Journal) ========================================================== Created: 2023-02-01 12:02:30 ConfID: 6715388 CauseID: 1560032982 OtherID: 1363321532 JT: Japanese Journal of Applied Physics MD: Ahn,51,9s2,910,2012,Composition Design Rule for High Piezoelectric Voltage Coefficient in (K0.5Na0.5)NbO3 Based Pb-Free Ceramics DOI: 10.1143/JJAP.51.09MD10(Journal) (6715388-N) DOI: 10.7567/JJAP.51.09MD10(Journal) ========================================================== Created: 2023-02-01 12:02:34 ConfID: 6715389 CauseID: 1560032986 OtherID: 1363321520 JT: Japanese Journal of Applied Physics MD: Koo,51,9s2,901,2012,Design of 154 kV Extra-High-Voltage Prototype SF6 Bushing for Superconducting Electric Power Applications DOI: 10.1143/JJAP.51.09ME01(Journal) (6715389-N) DOI: 10.7567/JJAP.51.09ME01(Journal) ========================================================== Created: 2023-02-01 12:02:27 ConfID: 6715386 CauseID: 1560032974 OtherID: 1363321500 JT: Japanese Journal of Applied Physics MD: Lee,51,9s2,903,2012,Interfacial Dead Layers on Lead Free Ferroelectric (K0.5Na0.5)(Mn0.005Nb0.995)O3 Thin Films DOI: 10.1143/JJAP.51.09MD03(Journal) (6715386-N) DOI: 10.7567/JJAP.51.09MD03(Journal) ========================================================== Created: 2023-02-01 12:02:30 ConfID: 6715387 CauseID: 1560032981 OtherID: 1363321479 JT: Japanese Journal of Applied Physics MD: Ohsato,51,9s1,902,2012,Fabrication Conditions of Diopside for Millimeterwave Dielectrics DOI: 10.1143/JJAP.51.09LF02(Journal) (6715387-N) DOI: 10.7567/JJAP.51.09LF02(Journal) ========================================================== Created: 2023-02-01 12:02:26 ConfID: 6715384 CauseID: 1560032971 OtherID: 1363321494 JT: Japanese Journal of Applied Physics MD: Vediappan,51,9s2,904,2012,Analysis of Thermal Aging and Structural Stability of Li[Lix(Ni0.3Co0.1Mn0.6)1-x]O2 (x = 0.11) Cathode Active Material for Rechargeable Li-Ion Batteries DOI: 10.1143/JJAP.51.09MB04(Journal) (6715384-N) DOI: 10.7567/JJAP.51.09MB04(Journal) ========================================================== Created: 2023-02-01 12:02:27 ConfID: 6715385 CauseID: 1560032973 OtherID: 1363321546 JT: Japanese Journal of Applied Physics MD: Lee,51,9s2,913,2012,Effects of Heating Time and Intermediate Heating on Sol–Gel-Processed ZrO2 Thin Films DOI: 10.1143/JJAP.51.09MF13(Journal) (6715385-N) DOI: 10.7567/JJAP.51.09MF13(Journal) ========================================================== Created: 2023-02-01 12:50:48 ConfID: 6715334 CauseID: 1560041161 OtherID: 1363322286 JT: Japanese Journal of Applied Physics MD: Yamada,51,7s,704,2012,Equivalent Network Representation for a Liquid-Level Sensor Operating in Trapped-Energy-Mode Thickness Vibration DOI: 10.1143/JJAP.51.07GC04(Journal) (6715334-N) DOI: 10.7567/JJAP.51.07GC04(Journal) ========================================================== Created: 2023-02-01 12:50:58 ConfID: 6715335 CauseID: 1560041179 OtherID: 1363322287 JT: Japanese Journal of Applied Physics MD: Korai,51,7s,703,2012,Development of a Long-Focal-Range Annular Array Ultrasonic Transducer DOI: 10.1143/JJAP.51.07GC03(Journal) (6715335-N) DOI: 10.7567/JJAP.51.07GC03(Journal) ========================================================== Created: 2023-02-01 12:01:39 ConfID: 6715332 CauseID: 1560032831 OtherID: 1363321517 JT: Japanese Journal of Applied Physics MD: Ham,51,9s2,915,2012,Piezoelectrically Driven Dispensing Head for Encapsulation of Light Emitting Diode Chip DOI: 10.1143/JJAP.51.09MD15(Journal) (6715332-N) DOI: 10.7567/JJAP.51.09MD15(Journal) ========================================================== Created: 2023-02-01 12:50:40 ConfID: 6715333 CauseID: 1560041143 OtherID: 1363321136 JT: Japanese Journal of Applied Physics MD: Hara,51,7s,711,2012,Spurious Suppression without Energy Dissipation in Aluminum–Nitride-Based Thin-Film Bulk Acoustic Resonator Using Thin Ring on Electrode Edge DOI: 10.1143/JJAP.51.07GC11(Journal) (6715333-N) DOI: 10.7567/JJAP.51.07GC11(Journal) ========================================================== Created: 2023-02-01 12:50:16 ConfID: 6715330 CauseID: 1560041090 OtherID: 1363321104 JT: Japanese Journal of Applied Physics MD: Kim,51,7s,710,2012,Acoustic Characteristics of a Tissue Mimicking Phantom for Visualization of Thermal Distribution DOI: 10.1143/JJAP.51.07GB10(Journal) (6715330-N) DOI: 10.7567/JJAP.51.07GB10(Journal) ========================================================== Created: 2023-02-01 12:50:29 ConfID: 6715331 CauseID: 1560041112 OtherID: 1363321132 JT: Japanese Journal of Applied Physics MD: Watanabe,51,7s,709,2012,Precision Test Fixture for Measuring Equivalent Circuit Parameters of GHz Surface-Mounted Quarts Crystal Units DOI: 10.1143/JJAP.51.07GC09(Journal) (6715331-N) DOI: 10.7567/JJAP.51.07GC09(Journal) ========================================================== Created: 2023-02-01 12:48:09 ConfID: 6715328 CauseID: 1560040791 OtherID: 1363320827 JT: Japanese Journal of Applied Physics MD: Ablett,51,5s,501,2012,Characterization of Chemically Vapor Deposited Manganese Barrier Layers Using X-ray Absorption Fine Structure DOI: 10.1143/JJAP.51.05EB01(Journal) (6715328-N) DOI: 10.7567/JJAP.51.05EB01(Journal) ========================================================== Created: 2023-02-01 12:49:12 ConfID: 6715329 CauseID: 1560040931 OtherID: 1363320845 JT: Japanese Journal of Applied Physics MD: Yamazaki,51,5s,503,2012,Effect of Groove Pattern of Chemical Mechanical Polishing Pad on Slurry Flow Behavior DOI: 10.1143/JJAP.51.05EF03(Journal) (6715329-N) DOI: 10.7567/JJAP.51.05EF03(Journal) ========================================================== Created: 2023-02-01 12:51:35 ConfID: 6715342 CauseID: 1560041289 OtherID: 1363321131 JT: Japanese Journal of Applied Physics MD: Kim,51,7s,702,2012,Focal Length Controllable Ultrasonic Array Transducer with Adjustable Curvature DOI: 10.1143/JJAP.51.07GC02(Journal) (6715342-N) DOI: 10.7567/JJAP.51.07GC02(Journal) ========================================================== Created: 2023-02-01 12:51:25 ConfID: 6715340 CauseID: 1560041263 OtherID: 1363321123 JT: Japanese Journal of Applied Physics MD: Asai,51,7s,710,2012,Quality Factor of Contour-Mode AlN Resonator DOI: 10.1143/JJAP.51.07GC10(Journal) (6715340-N) DOI: 10.7567/JJAP.51.07GC10(Journal) ========================================================== Created: 2023-02-01 12:51:33 ConfID: 6715341 CauseID: 1560041275 OtherID: 1363322285 JT: Japanese Journal of Applied Physics MD: Kim,51,7s,711,2012,Effect of Focused Ultrasound on Residual Particle Size Distribution in Water DOI: 10.1143/JJAP.51.07GB11(Journal) (6715341-N) DOI: 10.7567/JJAP.51.07GB11(Journal) ========================================================== Created: 2023-02-01 12:51:12 ConfID: 6715338 CauseID: 1560041223 OtherID: 1363321222 JT: Japanese Journal of Applied Physics MD: Son,51,7s,702,2012,Underwater Target Echo Signal Separation Using Independent Component Analysis and Principal Component Analysis DOI: 10.1143/JJAP.51.07GG02(Journal) (6715338-N) DOI: 10.7567/JJAP.51.07GG02(Journal) ========================================================== Created: 2023-02-01 12:51:20 ConfID: 6715339 CauseID: 1560041244 OtherID: 1363321165 JT: Japanese Journal of Applied Physics MD: Kim,51,7s,712,2012,Experimental Investigation of Acoustically Enhanced Dewaterability of Unconsolidated Soils DOI: 10.1143/JJAP.51.07GD12(Journal) (6715339-N) DOI: 10.7567/JJAP.51.07GD12(Journal) ========================================================== Created: 2023-02-01 12:01:43 ConfID: 6715336 CauseID: 1560032839 OtherID: 1363321463 JT: Japanese Journal of Applied Physics MD: Karaki,51,9s1,909,2012,Measurements of Acoustical Physical Constants of La3Ta0.5Ga5.3Al0.2O14 Single Crystals at High Temperatures DOI: 10.1143/JJAP.51.09LD09(Journal) (6715336-N) DOI: 10.7567/JJAP.51.09LD09(Journal) ========================================================== Created: 2023-02-01 12:01:44 ConfID: 6715337 CauseID: 1560032840 OtherID: 1363321491 JT: Japanese Journal of Applied Physics MD: Kanda,51,9s1,912,2012,Fabrication and Characterization of Double-Layer Pb(Zr,Ti)O3 Thin Films for Micro-Electromechanical Systems DOI: 10.1143/JJAP.51.09LD12(Journal) (6715337-N) DOI: 10.7567/JJAP.51.09LD12(Journal) ========================================================== Created: 2023-02-01 12:01:48 ConfID: 6715350 CauseID: 1560032860 OtherID: 1363321484 JT: Japanese Journal of Applied Physics MD: Kan,51,9s1,901,2012,Microwave Dielectric Properties of LiF- and CaTiO3-Added MgO with Low Dielectric Loss and Near-Zero Temperature Coefficient of Resonant Frequency for Low-Temperature Cofired-Ceramic DOI: 10.1143/JJAP.51.09LF01(Journal) (6715350-N) DOI: 10.7567/JJAP.51.09LF01(Journal) ========================================================== Created: 2023-02-01 12:01:49 ConfID: 6715351 CauseID: 1560032861 OtherID: 1363321474 JT: Japanese Journal of Applied Physics MD: Kinoshita,51,9s1,903,2012,A Method of Evaluating High-Permittivity and Lossy Materials Using a Cylindrical Cavity Based on Hybrid Electromagnetic Theory DOI: 10.1143/JJAP.51.09LF03(Journal) (6715351-N) DOI: 10.7567/JJAP.51.09LF03(Journal) ========================================================== Created: 2023-02-01 12:01:45 ConfID: 6715348 CauseID: 1560032855 OtherID: 1363321472 JT: Japanese Journal of Applied Physics MD: Chinone,51,9s1,907,2012,Observation of Nanoscale Ferroelectric Domains Using Super-Higher-Order Nonlinear Dielectric Microscopy DOI: 10.1143/JJAP.51.09LE07(Journal) (6715348-N) DOI: 10.7567/JJAP.51.09LE07(Journal) ========================================================== Created: 2023-02-01 12:01:46 ConfID: 6715349 CauseID: 1560032856 OtherID: 1363321483 JT: Japanese Journal of Applied Physics MD: Magome,51,9s1,905,2012,Crystal Structure of BaTiO3–KNbO3 Nanocomposite Ceramics: Relationship between Dielectric Property and Structure of Heteroepitaxial Interface DOI: 10.1143/JJAP.51.09LE05(Journal) (6715349-N) DOI: 10.7567/JJAP.51.09LE05(Journal) ========================================================== Created: 2023-02-01 12:01:41 ConfID: 6715346 CauseID: 1560032847 OtherID: 1363321477 JT: Japanese Journal of Applied Physics MD: Matsushita,51,9s1,904,2012,Field Effect on Displacive First-Order Transition in Relaxor Ferroelectrics DOI: 10.1143/JJAP.51.09LE04(Journal) (6715346-N) DOI: 10.7567/JJAP.51.09LE04(Journal) ========================================================== Created: 2023-02-01 12:01:42 ConfID: 6715347 CauseID: 1560032849 OtherID: 1363321485 JT: Japanese Journal of Applied Physics MD: Iwata,51,9s1,903,2012,Coexistence States near the Morphotropic Phase Boundary DOI: 10.1143/JJAP.51.09LE03(Journal) (6715347-N) DOI: 10.7567/JJAP.51.09LE03(Journal) ========================================================== Created: 2023-02-01 12:01:44 ConfID: 6715344 CauseID: 1560032842 OtherID: 1363321478 JT: Japanese Journal of Applied Physics MD: Tanuma,51,9s1,913,2012,Shear-Mode Industrial Inkjet Head Using Lead-Free Piezoelectric Ceramics DOI: 10.1143/JJAP.51.09LD13(Journal) (6715344-N) DOI: 10.7567/JJAP.51.09LD13(Journal) ========================================================== Created: 2023-02-01 12:01:40 ConfID: 6715345 CauseID: 1560032845 OtherID: 1363321476 JT: Japanese Journal of Applied Physics MD: Hagiwara,51,9s1,910,2012,Identicalness between Piezoelectric Loss and Dielectric Loss in Converse Effect of Piezoelectric Ceramic Resonators DOI: 10.1143/JJAP.51.09LD10(Journal) (6715345-N) DOI: 10.7567/JJAP.51.09LD10(Journal) ========================================================== Created: 2023-02-01 12:01:56 ConfID: 6715358 CauseID: 1560032886 OtherID: 1363321505 JT: Japanese Journal of Applied Physics MD: Yilmaz,51,9s2,901,2012,Effects of Substitution of Al and Bi for Ni on Structure and Hydrogen Storage Properties of LaNi4.7-xAl0.3Bix (x=0.1, 0.2, 0.3) Alloy DOI: 10.1143/JJAP.51.09MB01(Journal) (6715358-N) DOI: 10.7567/JJAP.51.09MB01(Journal) ========================================================== Created: 2023-02-01 12:01:57 ConfID: 6715359 CauseID: 1560032887 OtherID: 1363321503 JT: Japanese Journal of Applied Physics MD: Ju,51,9s2,903,2012,Effectiveness of Iodine Termination for Ultrahigh Efficiency Solar Cells as a Means of Chemical Surface Passivation DOI: 10.1143/JJAP.51.09MA03(Journal) (6715359-N) DOI: 10.7567/JJAP.51.09MA03(Journal) ========================================================== Created: 2023-02-01 12:01:55 ConfID: 6715356 CauseID: 1560032879 OtherID: 1363321480 JT: Japanese Journal of Applied Physics MD: Ukai,51,9s1,910,2012,Polarization-Induced Photovoltaic Effects in Nd-Doped BiFeO3 Ferroelectric Thin Films DOI: 10.1143/JJAP.51.09LE10(Journal) (6715356-N) DOI: 10.7567/JJAP.51.09LE10(Journal) ========================================================== Created: 2023-02-01 12:01:55 ConfID: 6715357 CauseID: 1560032880 OtherID: 1363321456 JT: Japanese Journal of Applied Physics MD: Kakimoto,51,9s1,906,2012,Grain-Size-Controlled (Li,Na,K)NbO3 Ceramics Using Powder Source Classified by Centrifugal Separator DOI: 10.1143/JJAP.51.09LD06(Journal) (6715357-N) DOI: 10.7567/JJAP.51.09LD06(Journal) ========================================================== Created: 2023-02-01 12:01:51 ConfID: 6715354 CauseID: 1560032870 OtherID: 1363321481 JT: Japanese Journal of Applied Physics MD: Ando,51,9s1,914,2012,Film Sensor Device Fabricated by a Piezoelectric Poly(L-lactic acid) Film DOI: 10.1143/JJAP.51.09LD14(Journal) (6715354-N) DOI: 10.7567/JJAP.51.09LD14(Journal) ========================================================== Created: 2023-02-01 12:01:52 ConfID: 6715355 CauseID: 1560032872 OtherID: 1363321473 JT: Japanese Journal of Applied Physics MD: Inuzuka,51,9s1,915,2012,Fundamental Study of Application of Piezoelectric Chiral Polymer to Actuator DOI: 10.1143/JJAP.51.09LD15(Journal) (6715355-N) DOI: 10.7567/JJAP.51.09LD15(Journal) ========================================================== Created: 2023-02-01 12:01:50 ConfID: 6715352 CauseID: 1560032865 OtherID: 1363321526 JT: Japanese Journal of Applied Physics MD: Im,51,9s2,916,2012,Microwave Dielectric Properties of Ceramic/Semicrystalline Polymer Composites DOI: 10.1143/JJAP.51.09MD16(Journal) (6715352-N) DOI: 10.7567/JJAP.51.09MD16(Journal) ========================================================== Created: 2023-02-01 12:43:27 ConfID: 6715302 CauseID: 1560040030 OtherID: 1363321271 JT: Japanese Journal of Applied Physics MD: Lee,51,8r,89201,2012,Erratum: “Switching Characterization and Failure Analysis of In2Se3 Based Phase Change Memory” DOI: 10.1143/JJAP.51.089201(Journal) (6715302-N) DOI: 10.7567/JJAP.51.089201(Journal) ========================================================== Created: 2023-02-01 12:01:25 ConfID: 6715303 CauseID: 1560032784 OtherID: 1363321467 JT: Japanese Journal of Applied Physics MD: Mimura,51,9s1,903,2012,Fabrication and Characterization of Dielectric Nanocube Self-Assembled Structures DOI: 10.1143/JJAP.51.09LC03(Journal) (6715303-N) DOI: 10.7567/JJAP.51.09LC03(Journal) ========================================================== Created: 2023-02-01 12:01:22 ConfID: 6715300 CauseID: 1560032773 OtherID: 1363321444 JT: Japanese Journal of Applied Physics MD: Nakashima,51,9s1,902,2012,Structural and Ferroelectric Properties of Domain-Structure-Controlled BiFeO3 Thin Films Prepared by Dual-Ion-Beam Sputtering DOI: 10.1143/JJAP.51.09LB02(Journal) (6715300-N) DOI: 10.7567/JJAP.51.09LB02(Journal) ========================================================== Created: 2023-02-01 12:43:19 ConfID: 6715301 CauseID: 1560039999 OtherID: 1363320767 JT: Japanese Journal of Applied Physics MD: Shiraki,51,4s,403,2012,High Voltage and High Reliability Silicon-on-Insulator Power IC Technologies and Their Application to 750 V 4.5 A Micro-Inverter IC DOI: 10.1143/JJAP.51.04DP03(Journal) (6715301-N) DOI: 10.7567/JJAP.51.04DP03(Journal) ========================================================== Created: 2023-02-01 12:42:16 ConfID: 6715298 CauseID: 1560039842 OtherID: 1363321087 JT: Japanese Journal of Applied Physics MD: Kang,51,7r,79203,2012,Publisher's Note: “A Latch-up Immunized Lateral Trench Insulated Gate Bipolar Transistor with a p+ Diverter Structure for Smart Power Integrated Circuit” DOI: 10.1143/JJAP.51.079203(Journal) (6715298-N) DOI: 10.7567/JJAP.51.079203(Journal) ========================================================== Created: 2023-02-01 12:01:21 ConfID: 6715299 CauseID: 1560032771 OtherID: 1363321501 JT: Japanese Journal of Applied Physics MD: Duan,51,9s2,902,2012,Epitaxial Growth of Silicon Films on SiO2 Patterned Si(100) Substrates by Atmospheric Pressure Chemical Vapor Deposition DOI: 10.1143/JJAP.51.09MA02(Journal) (6715299-N) DOI: 10.7567/JJAP.51.09MA02(Journal) ========================================================== Created: 2023-02-01 12:42:11 ConfID: 6715296 CauseID: 1560039828 OtherID: 1363320856 JT: Japanese Journal of Applied Physics MD: Mizushima,51,5s,503,2012,Novel Through Silicon Vias Leakage Current Evaluation Using Infrared-Optical Beam Irradiation DOI: 10.1143/JJAP.51.05EE03(Journal) (6715296-N) DOI: 10.7567/JJAP.51.05EE03(Journal) ========================================================== Created: 2023-02-01 12:42:15 ConfID: 6715297 CauseID: 1560039840 OtherID: 1363320861 JT: Japanese Journal of Applied Physics MD: Khajornrungruang,51,5s,504,2012,Spatial Fourier Transform Analysis of Polishing Pad Surface Topography DOI: 10.1143/JJAP.51.05EF04(Journal) (6715297-N) DOI: 10.7567/JJAP.51.05EF04(Journal) ========================================================== Created: 2023-02-01 12:45:06 ConfID: 6715310 CauseID: 1560040317 OtherID: 1363320726 JT: Japanese Journal of Applied Physics MD: Han,51,4s,409,2012,An Integrated Amorphous Silicon Gate Driver Circuit Using Voltage-Controlled Capacitance Modeling for High Definition Television DOI: 10.1143/JJAP.51.04DE09(Journal) (6715310-N) DOI: 10.7567/JJAP.51.04DE09(Journal) ========================================================== Created: 2023-02-01 12:45:10 ConfID: 6715311 CauseID: 1560040329 OtherID: 1363320052 JT: Japanese Journal of Applied Physics MD: Nagashima,51,11r,119201,2012,Erratum: “Design of Rectangular Transmission Gratings Fabricated in LiNbO3 for High-Power Terahertz-Wave Generation” DOI: 10.1143/JJAP.51.119201(Journal) (6715311-N) DOI: 10.7567/JJAP.51.119201(Journal) ========================================================== Created: 2023-02-01 12:44:38 ConfID: 6715308 CauseID: 1560040215 OtherID: 1363320681 JT: Japanese Journal of Applied Physics MD: Sun,51,4s,403,2012,Design of Thin-Body Double-Gated Vertical-Channel Tunneling Field-Effect Transistors for Ultralow-Power Logic Circuits DOI: 10.1143/JJAP.51.04DC03(Journal) (6715308-N) DOI: 10.7567/JJAP.51.04DC03(Journal) ========================================================== Created: 2023-02-01 12:44:44 ConfID: 6715309 CauseID: 1560040236 OtherID: 1363320585 JT: Japanese Journal of Applied Physics MD: Oh,51,3s,301,2012,Threshold-Voltage-Shift Compensation and Suppression Method Using Hydrogenated Amorphous Silicon Thin-Film Transistors for Large Active Matrix Organic Light-Emitting Diode Displays DOI: 10.1143/JJAP.51.03CD01(Journal) (6715309-N) DOI: 10.7567/JJAP.51.03CD01(Journal) ========================================================== Created: 2023-02-01 12:01:28 ConfID: 6715306 CauseID: 1560032790 OtherID: 1363321489 JT: Japanese Journal of Applied Physics MD: Nogami,51,9s1,911,2012,Impact of Reflow on the Output Characteristics of Piezoelectric Microelectromechanical System Devices DOI: 10.1143/JJAP.51.09LD11(Journal) (6715306-N) DOI: 10.7567/JJAP.51.09LD11(Journal) ========================================================== Created: 2023-02-01 12:43:40 ConfID: 6715307 CauseID: 1560040074 OtherID: 1363320768 JT: Japanese Journal of Applied Physics MD: Ashida,51,4s,402,2012,Extraction Enhanced Lateral Insulated Gate Bipolar Transistor: A Super High Speed Lateral Insulated Gate Bipolar Transistor Superior to Lateral Dobule Difused Metal Oxide Semiconductor Field-Effect Transistor DOI: 10.1143/JJAP.51.04DP02(Journal) (6715307-N) DOI: 10.7567/JJAP.51.04DP02(Journal) ========================================================== Created: 2023-02-01 12:43:34 ConfID: 6715304 CauseID: 1560040039 OtherID: 1363321415 JT: Japanese Journal of Applied Physics MD: Hattori,51,9r,98004,2012,Position-Dependent Behavior of Piezoelectric Lead–Zirconate–Titanate Cosmic Dust Detector DOI: 10.1143/JJAP.51.098004(Journal) (6715304-N) DOI: 10.7567/JJAP.51.098004(Journal) ========================================================== Created: 2023-02-01 12:01:27 ConfID: 6715305 CauseID: 1560032789 OtherID: 1363321452 JT: Japanese Journal of Applied Physics MD: Kitanaka,51,9s1,908,2012,Elastic and Piezoelectric Properties of High-Quality Ferroelectric Bi4Ti3O12 Single Crystals DOI: 10.1143/JJAP.51.09LD08(Journal) (6715305-N) DOI: 10.7567/JJAP.51.09LD08(Journal) ========================================================== Created: 2023-02-01 12:01:32 ConfID: 6715318 CauseID: 1560032808 OtherID: 1363321469 JT: Japanese Journal of Applied Physics MD: Natsui,51,9s1,909,2012,Effect of Vanadium Addition on Reliability and Microstructure of BaTiO3-Based Multilayer Ceramic Capacitors DOI: 10.1143/JJAP.51.09LC09(Journal) (6715318-N) DOI: 10.7567/JJAP.51.09LC09(Journal) ========================================================== Created: 2023-02-01 12:01:33 ConfID: 6715319 CauseID: 1560032809 OtherID: 1363321464 JT: Japanese Journal of Applied Physics MD: Wada,51,9s1,905,2012,Nanostructure Control of Barium Titanate–Potassium Niobate Nanocomplex Ceramics and Their Enhanced Ferroelectric Properties DOI: 10.1143/JJAP.51.09LC05(Journal) (6715319-N) DOI: 10.7567/JJAP.51.09LC05(Journal) ========================================================== Created: 2023-02-01 12:46:38 ConfID: 6715316 CauseID: 1560040583 OtherID: 1363320692 JT: Japanese Journal of Applied Physics MD: Kusai,51,4s,404,2012,Re-Examination of Performance and Reliability Degradation in Metal–Oxide–Nitride–Oxide–Semiconductor Memory with Ultrathin SiN Charge Trap Layers DOI: 10.1143/JJAP.51.04DD04(Journal) (6715316-N) DOI: 10.7567/JJAP.51.04DD04(Journal) ========================================================== Created: 2023-02-01 12:01:31 ConfID: 6715317 CauseID: 1560032805 OtherID: 1363321510 JT: Japanese Journal of Applied Physics MD: Kim,51,9s2,903,2012,Thermal Stability Enhancement of Polyethylene Separators by Gamma-ray Irradiation for Lithium Ion Batteries DOI: 10.1143/JJAP.51.09MB03(Journal) (6715317-N) DOI: 10.7567/JJAP.51.09MB03(Journal) ========================================================== Created: 2023-02-01 12:46:23 ConfID: 6715314 CauseID: 1560040540 OtherID: 1363319981 JT: Japanese Journal of Applied Physics MD: Harimoto,51,10r,108001,2012,Simple Method of Designing the Thickness of a Nonlinear Optical Crystal of Second-Harmonic Generation under Imperfect Phase-Matching Conditions DOI: 10.1143/JJAP.51.108001(Journal) (6715314-N) DOI: 10.7567/JJAP.51.108001(Journal) ========================================================== Created: 2023-02-01 12:46:24 ConfID: 6715315 CauseID: 1560040542 OtherID: 1363320675 JT: Japanese Journal of Applied Physics MD: Zhang,51,4s,403,2012,Through Silicon Via Fabrication with Low-κ Dielectric Liner and Its Implications on Parasitic Capacitance and Leakage Current DOI: 10.1143/JJAP.51.04DB03(Journal) (6715315-N) DOI: 10.7567/JJAP.51.04DB03(Journal) ========================================================== Created: 2023-02-01 12:45:25 ConfID: 6715312 CauseID: 1560040374 OtherID: 1363320056 JT: Japanese Journal of Applied Physics MD: Oh,51,11r,119202,2012,Erratum: “Hydrothermal Synthesis of Pt–Ru–W Anode Catalyst Supported on Multi-Walled Carbon Nanotubes for Methanol Oxidation Fuel Cell” DOI: 10.1143/JJAP.51.119202(Journal) (6715312-N) DOI: 10.7567/JJAP.51.119202(Journal) ========================================================== Created: 2023-02-01 12:45:42 ConfID: 6715313 CauseID: 1560040427 OtherID: 1363321207 JT: Japanese Journal of Applied Physics MD: Park,51,7s,703,2012,Performance Simulation of Direct-Sequence Spread-Spectrum Signal Considering Transmitter Characteristics for Range Estimation in the Deep Sea DOI: 10.1143/JJAP.51.07GG03(Journal) (6715313-N) DOI: 10.7567/JJAP.51.07GG03(Journal) ========================================================== Created: 2023-02-01 12:47:20 ConfID: 6715326 CauseID: 1560040683 OtherID: 1363320711 JT: Japanese Journal of Applied Physics MD: Ishikawa,51,4s,401,2012,Manipulation of Dispersed Magnetic Beads for On-Chip Immunoassay DOI: 10.1143/JJAP.51.04DE01(Journal) (6715326-N) DOI: 10.7567/JJAP.51.04DE01(Journal) ========================================================== Created: 2023-02-01 12:47:46 ConfID: 6715327 CauseID: 1560040740 OtherID: 1363320850 JT: Japanese Journal of Applied Physics MD: Uneda,51,5s,502,2012,Performance Evaluation Method of Chemical Mechanical Polishing Pad Conditioner Using Digital Image Correlation Processing DOI: 10.1143/JJAP.51.05EF02(Journal) (6715327-N) DOI: 10.7567/JJAP.51.05EF02(Journal) ========================================================== Created: 2023-02-01 12:01:38 ConfID: 6715324 CauseID: 1560032829 OtherID: 1363321458 JT: Japanese Journal of Applied Physics MD: Hayashi,51,9s1,901,2012,Reliability of Nickel Inner Electrode Lead-Free Multilayer Piezoelectric Ceramics DOI: 10.1143/JJAP.51.09LD01(Journal) (6715324-N) DOI: 10.7567/JJAP.51.09LD01(Journal) ========================================================== Created: 2023-02-01 12:47:16 ConfID: 6715325 CauseID: 1560040671 OtherID: 1363320047 JT: Japanese Journal of Applied Physics MD: Choe,51,11r,118001,2012,Measurement of a Balanced Receiver's Skew Using Optoelectronic Interferometry DOI: 10.1143/JJAP.51.118001(Journal) (6715325-N) DOI: 10.7567/JJAP.51.118001(Journal) ========================================================== Created: 2023-02-01 12:01:36 ConfID: 6715322 CauseID: 1560032825 OtherID: 1363321507 JT: Japanese Journal of Applied Physics MD: Jeong,51,9s2,904,2012,Ferroelectric and Piezoelectric Properties of 0.72Pb(Zr0.47Ti0.53)O3–0.28Pb[(Zn0.45Ni0.55)1/3Nb2/3]O3 Thick Films for Energy Harvesting Device Application DOI: 10.1143/JJAP.51.09MD04(Journal) (6715322-N) DOI: 10.7567/JJAP.51.09MD04(Journal) ========================================================== Created: 2023-02-01 12:01:36 ConfID: 6715323 CauseID: 1560032826 OtherID: 1363321470 JT: Japanese Journal of Applied Physics MD: Shimizu,51,9s1,902,2012,High-Power Piezoelectric Characteristics of C-Axis Crystal-Oriented (Sr,Ca)2NaNb5O15 Ceramics DOI: 10.1143/JJAP.51.09LD02(Journal) (6715323-N) DOI: 10.7567/JJAP.51.09LD02(Journal) ========================================================== Created: 2023-02-01 12:01:33 ConfID: 6715320 CauseID: 1560032810 OtherID: 1363321462 JT: Japanese Journal of Applied Physics MD: Hidayah,51,9s1,906,2012,Poling and Depoling Effects on Dielectric Properties and Domain Structures in Relaxor 24Pb(In1/2Nb1/2)O3–46Pb(Mg1/3Nb2/3)O3–30PbTiO3 near a Morphotropic Phase Boundary Composition DOI: 10.1143/JJAP.51.09LC06(Journal) (6715320-N) DOI: 10.7567/JJAP.51.09LC06(Journal) ========================================================== Created: 2023-02-01 12:01:35 ConfID: 6715321 CauseID: 1560032824 OtherID: 1363321461 JT: Japanese Journal of Applied Physics MD: Suzuki,51,9s1,908,2012,Substitution of Sn Ions in (Ba,Ca)TiO3 Perovskites DOI: 10.1143/JJAP.51.09LC08(Journal) (6715321-N) DOI: 10.7567/JJAP.51.09LC08(Journal) ========================================================== Created: 2023-02-01 12:33:44 ConfID: 6715270 CauseID: 1560038400 OtherID: 1363320839 JT: Japanese Journal of Applied Physics MD: Uenishi,51,5r,58001,2012,Rotation-Symmetric Multispot Focusing Phase-Shifted Grating Coupler for Integrated Semiconductor Laser DOI: 10.1143/JJAP.51.058001(Journal) (6715270-N) DOI: 10.7567/JJAP.51.058001(Journal) ========================================================== Created: 2023-02-01 12:01:04 ConfID: 6715271 CauseID: 1560032720 OtherID: 1363321435 JT: Japanese Journal of Applied Physics MD: Fukatani,51,9s1,901,2012,Ferroelectricity and Ferromagnetism of BaTiO3/BaFeO3 Superlattice Thin Films DOI: 10.1143/JJAP.51.09LB01(Journal) (6715271-N) DOI: 10.7567/JJAP.51.09LB01(Journal) ========================================================== Created: 2023-02-01 12:01:04 ConfID: 6715268 CauseID: 1560032719 OtherID: 1363321442 JT: Japanese Journal of Applied Physics MD: Lu,51,9s1,918,2012,Thermally Stimulated Current Analysis of Defects in Sol–Gel Derived SrTa2O6 Thin-Film Capacitors DOI: 10.1143/JJAP.51.09LA18(Journal) (6715268-N) DOI: 10.7567/JJAP.51.09LA18(Journal) ========================================================== Created: 2023-02-01 12:33:27 ConfID: 6715269 CauseID: 1560038367 OtherID: 1363320579 JT: Japanese Journal of Applied Physics MD: Irokawa,51,4r,40206,2012,Shottky Barrier Diodes on AlN Free-Standing Substrates DOI: 10.1143/JJAP.51.040206(Journal) (6715269-N) DOI: 10.7567/JJAP.51.040206(Journal) ========================================================== Created: 2023-02-01 12:01:03 ConfID: 6715267 CauseID: 1560032717 OtherID: 1363321465 JT: Japanese Journal of Applied Physics MD: Furue,51,9s1,907,2012,Effect of Polymer Stabilization on Molecular Alignment of Ferroelectric Liquid Crystal in Wide-Gap Cell DOI: 10.1143/JJAP.51.09LD07(Journal) (6715267-N) DOI: 10.7567/JJAP.51.09LD07(Journal) ========================================================== Created: 2023-02-01 12:31:53 ConfID: 6715264 CauseID: 1560037983 OtherID: 1363320593 JT: Japanese Journal of Applied Physics MD: Wang,51,4r,40205,2012,Light Source Position Dependence of Evanescent Wave Coupling Effect in Narrow GaAs/AlGaAs Ridge Structure DOI: 10.1143/JJAP.51.040205(Journal) (6715264-N) DOI: 10.7567/JJAP.51.040205(Journal) ========================================================== Created: 2023-02-01 12:31:57 ConfID: 6715265 CauseID: 1560038019 OtherID: 1363320643 JT: Japanese Journal of Applied Physics MD: Aoki,51,4r,44301,2012,n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Modeling in Forward Body Bias Condition for Low Voltage Complementary Metal–Oxide–Semiconductor Circuits Design DOI: 10.1143/JJAP.51.044301(Journal) (6715265-N) DOI: 10.7567/JJAP.51.044301(Journal) ========================================================== Created: 2023-02-01 12:36:31 ConfID: 6715278 CauseID: 1560038875 OtherID: 1363320573 JT: Japanese Journal of Applied Physics MD: Mizugaki,51,3r,38001,2012,Average Voltage Measurements of Periodic Blocking Oscillation in Resistive Superconducting Quantum Interference Device Connected to Josephson Transmission Line DOI: 10.1143/JJAP.51.038001(Journal) (6715278-N) DOI: 10.7567/JJAP.51.038001(Journal) ========================================================== Created: 2023-02-01 12:36:36 ConfID: 6715279 CauseID: 1560038887 OtherID: 1363321280 JT: Japanese Journal of Applied Physics MD: Harimoto,51,8r,88002,2012,Peak Intensity Stabilization of Fundamental Laser through Second-Harmonic Generation Process DOI: 10.1143/JJAP.51.088002(Journal) (6715279-N) DOI: 10.7567/JJAP.51.088002(Journal) ========================================================== Created: 2023-02-01 12:01:09 ConfID: 6715276 CauseID: 1560032734 OtherID: 1363321440 JT: Japanese Journal of Applied Physics MD: Machida,51,9s1,911,2012,Fabrication of Lead Zirconate Titanate Films by Inkjet Printing DOI: 10.1143/JJAP.51.09LA11(Journal) (6715276-N) DOI: 10.7567/JJAP.51.09LA11(Journal) ========================================================== Created: 2023-02-01 12:35:28 ConfID: 6715277 CauseID: 1560038716 OtherID: 1363321100 JT: Japanese Journal of Applied Physics MD: Poborchii,51,7r,78002,2012,Enhancement of the Strained Si Forbidden Doublet Transverse Optical Phonon Raman Band for Quantitative Stress Measurement DOI: 10.1143/JJAP.51.078002(Journal) (6715277-N) DOI: 10.7567/JJAP.51.078002(Journal) ========================================================== Created: 2023-02-01 12:01:08 ConfID: 6715274 CauseID: 1560032731 OtherID: 1363321447 JT: Japanese Journal of Applied Physics MD: Kawae,51,9s1,908,2012,Fabrication of (Bi,Pr)(Fe,Mn)O3 Thin Films on Polycrystalline Diamond Substrates by Chemical Solution Deposition and Their Properties DOI: 10.1143/JJAP.51.09LA08(Journal) (6715274-N) DOI: 10.7567/JJAP.51.09LA08(Journal) ========================================================== Created: 2023-02-01 12:34:34 ConfID: 6715275 CauseID: 1560038545 OtherID: 1363320368 JT: Japanese Journal of Applied Physics MD: Tuziuti,51,2r,28007,2012,Intermittent Changes in the Number of Pulsating Bubbles under Ultrasound DOI: 10.1143/JJAP.51.028007(Journal) (6715275-N) DOI: 10.7567/JJAP.51.028007(Journal) ========================================================== Created: 2023-02-01 12:34:08 ConfID: 6715272 CauseID: 1560038464 OtherID: 1363320369 JT: Japanese Journal of Applied Physics MD: Shin,51,2r,28001,2012,Optoelectronic Mixing in Electroabsorption Waveguides under Very High Optical Power DOI: 10.1143/JJAP.51.028001(Journal) (6715272-N) DOI: 10.7567/JJAP.51.028001(Journal) ========================================================== Created: 2023-02-01 12:34:13 ConfID: 6715273 CauseID: 1560038481 OtherID: 1363320339 JT: Japanese Journal of Applied Physics MD: Aoki,51,2r,26401,2012,Cold Neutron Focusing with a Wolter Type-I Mirror DOI: 10.1143/JJAP.51.026401(Journal) (6715273-N) DOI: 10.7567/JJAP.51.026401(Journal) ========================================================== Created: 2023-02-01 12:40:08 ConfID: 6715286 CauseID: 1560039514 OtherID: 1363321276 JT: Japanese Journal of Applied Physics MD: Harimoto,51,8r,88001,2012,Stable Fourth-Harmonic Generation of a Q-Switched Nanosecond–Kilohertz Nd:YVO4 Laser and Its Application to Dicing of Silicon Wafer DOI: 10.1143/JJAP.51.088001(Journal) (6715286-N) DOI: 10.7567/JJAP.51.088001(Journal) ========================================================== Created: 2023-02-01 12:40:07 ConfID: 6715287 CauseID: 1560039521 OtherID: 1363321093 JT: Japanese Journal of Applied Physics MD: Sung,51,7r,79205,2012,Publisher's Note: “The Characteristics of Kink Effect Suppressed Thin Film Transistor by Using Symmetric Dual-Gate” DOI: 10.1143/JJAP.51.079205(Journal) (6715287-N) DOI: 10.7567/JJAP.51.079205(Journal) ========================================================== Created: 2023-02-01 12:38:45 ConfID: 6715284 CauseID: 1560039277 OtherID: 1363319985 JT: Japanese Journal of Applied Physics MD: Jin,51,10r,108004,2012,Fourfold Increase in Quantum Efficiency in Highly Spin-Polarized Transmission-Type Photocathode DOI: 10.1143/JJAP.51.108004(Journal) (6715284-N) DOI: 10.7567/JJAP.51.108004(Journal) ========================================================== Created: 2023-02-01 12:39:32 ConfID: 6715285 CauseID: 1560039426 OtherID: 1363321085 JT: Japanese Journal of Applied Physics MD: Kang,51,7r,79202,2012,Publisher's Note: “A Small-Sized Lateral Trench Electrode Insulated Gate Bipolar Transistor for Improving Latch-up and Breakdown Characteristics” DOI: 10.1143/JJAP.51.079202(Journal) (6715285-N) DOI: 10.7567/JJAP.51.079202(Journal) ========================================================== Created: 2023-02-01 12:37:32 ConfID: 6715282 CauseID: 1560039057 OtherID: 1363320582 JT: Japanese Journal of Applied Physics MD: Nakahama,51,4r,40209,2012,Giant Wavelength–Temperature Dependence of a Micro Machined Vertical Cavity Surface Emitting Laser with a Thermally Actuated Cantilever Structure DOI: 10.1143/JJAP.51.040209(Journal) (6715282-N) DOI: 10.7567/JJAP.51.040209(Journal) ========================================================== Created: 2023-02-01 12:37:54 ConfID: 6715283 CauseID: 1560039120 OtherID: 1363319980 JT: Japanese Journal of Applied Physics MD: Amano,51,10r,108005,2012,Generation of Radio Frequency Plasma in High-Conductivity NaCl Solution DOI: 10.1143/JJAP.51.108005(Journal) (6715283-N) DOI: 10.7567/JJAP.51.108005(Journal) ========================================================== Created: 2023-02-01 12:36:43 ConfID: 6715280 CauseID: 1560038905 OtherID: 1363320375 JT: Japanese Journal of Applied Physics MD: Tsunawaki,51,2r,28002,2012,Magnetic Properties of Cobalt Plate Compared with Iron and Nickel Plates DOI: 10.1143/JJAP.51.028002(Journal) (6715280-N) DOI: 10.7567/JJAP.51.028002(Journal) ========================================================== Created: 2023-02-01 12:36:55 ConfID: 6715281 CauseID: 1560038946 OtherID: 1363320794 JT: Japanese Journal of Applied Physics MD: Fujita,51,5r,54101,2012,Simulation Study on Insulated Gate Bipolar Transistor Turn-Off Oscillations DOI: 10.1143/JJAP.51.054101(Journal) (6715281-N) DOI: 10.7567/JJAP.51.054101(Journal) ========================================================== Created: 2023-02-01 12:40:59 ConfID: 6715294 CauseID: 1560039647 OtherID: 1363320774 JT: Japanese Journal of Applied Physics MD: He,51,4s,408,2012,Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal–Oxide–Semiconductor Field-Effect Transistors by a Novel Direct Current Current–Voltage Technique DOI: 10.1143/JJAP.51.04DP08(Journal) (6715294-N) DOI: 10.7567/JJAP.51.04DP08(Journal) ========================================================== Created: 2023-02-01 12:41:28 ConfID: 6715295 CauseID: 1560039723 OtherID: 1363321402 JT: Japanese Journal of Applied Physics MD: Terada,51,9r,94301,2012,Effect of Channel Dopant Non-uniformity on Transconductance Variability DOI: 10.1143/JJAP.51.094301(Journal) (6715295-N) DOI: 10.7567/JJAP.51.094301(Journal) ========================================================== Created: 2023-02-01 12:01:16 ConfID: 6715292 CauseID: 1560032758 OtherID: 1363321438 JT: Japanese Journal of Applied Physics MD: Ehara,51,9s1,914,2012,Film Thickness Dependence of Crystal Structure in 100-Oriented Epitaxial Pb(Zr0.65Ti0.35)O3 Films Grown on Single-Crystal Substrates with Different Thermal Expansion Coefficients DOI: 10.1143/JJAP.51.09LA14(Journal) (6715292-N) DOI: 10.7567/JJAP.51.09LA14(Journal) ========================================================== Created: 2023-02-01 12:01:17 ConfID: 6715293 CauseID: 1560032759 OtherID: 1363321490 JT: Japanese Journal of Applied Physics MD: Ito,51,9s1,916,2012,Sensing Using Piezoelectric Chiral Polymer Fiber DOI: 10.1143/JJAP.51.09LD16(Journal) (6715293-N) DOI: 10.7567/JJAP.51.09LD16(Journal) ========================================================== Created: 2023-02-01 12:01:12 ConfID: 6715290 CauseID: 1560032747 OtherID: 1363321459 JT: Japanese Journal of Applied Physics MD: Nagata,51,9s1,905,2012,Fabrication and Electrical Properties of Mn-Doped KNbO3 Ceramics Synthesized from KHCO3 as a Starting Material DOI: 10.1143/JJAP.51.09LD05(Journal) (6715290-N) DOI: 10.7567/JJAP.51.09LD05(Journal) ========================================================== Created: 2023-02-01 12:01:19 ConfID: 6715291 CauseID: 1560032755 OtherID: 1363321432 JT: Japanese Journal of Applied Physics MD: Ohno,51,9s1,913,2012,Strain-Induced Electrical Properties of Lead Zirconate Titanate Thin Films on a Si wafer with Controlled Oxide Electrode Structure DOI: 10.1143/JJAP.51.09LA13(Journal) (6715291-N) DOI: 10.7567/JJAP.51.09LA13(Journal) ========================================================== Created: 2023-02-01 12:40:15 ConfID: 6715288 CauseID: 1560039543 OtherID: 1363321082 JT: Japanese Journal of Applied Physics MD: Sung,51,7r,79204,2012,Publisher's Note: “A New Lateral Trench Electrode Insulated Gate Bipolar Transistor with p+ Diverter for Superior Electrical Characteristics” DOI: 10.1143/JJAP.51.079204(Journal) (6715288-N) DOI: 10.7567/JJAP.51.079204(Journal) ========================================================== Created: 2023-02-01 12:40:35 ConfID: 6715289 CauseID: 1560039585 OtherID: 1363321098 JT: Japanese Journal of Applied Physics MD: Park,51,7r,79206,2012,Publisher's Note: “Improvements of Defects by Patterning Using Thermal Nanoimprint Lithography” DOI: 10.1143/JJAP.51.079206(Journal) (6715289-N) DOI: 10.7567/JJAP.51.079206(Journal) ========================================================== Created: 2023-02-01 12:04:43 ConfID: 6715494 CauseID: 1560033398 OtherID: 1363324828 JT: Japanese Journal of Applied Physics MD: Tsuno,51,10s,1002,2012,Comparison of Curve Correction Procedures for Current–Voltage Characteristics of Photovoltaic Devices DOI: 10.1143/JJAP.51.10NF02(Journal) (6715494-N) DOI: 10.7567/JJAP.51.10NF02(Journal) ========================================================== Created: 2023-02-01 12:04:45 ConfID: 6715495 CauseID: 1560033408 OtherID: 1363324718 JT: Japanese Journal of Applied Physics MD: Matsui,51,10s,1004,2012,Amorphous-Silicon-Based Thin-Film Solar Cells Exhibiting Low Light-Induced Degradation DOI: 10.1143/JJAP.51.10NB04(Journal) (6715495-N) DOI: 10.7567/JJAP.51.10NB04(Journal) ========================================================== Created: 2023-02-01 12:04:44 ConfID: 6715492 CauseID: 1560033393 OtherID: 1363324739 JT: Japanese Journal of Applied Physics MD: Kang,51,10s,1010,2012,Effect of TiO2 Antireflection Layer with Various Conductivities and Refractive Indices on Performance of Amorphous Silicon/Amorphous Silicon Germanium Tandem Solar Cells DOI: 10.1143/JJAP.51.10NB10(Journal) (6715492-N) DOI: 10.7567/JJAP.51.10NB10(Journal) ========================================================== Created: 2023-02-01 12:04:42 ConfID: 6715493 CauseID: 1560033396 OtherID: 1363324837 JT: Japanese Journal of Applied Physics MD: Fukuzumi,51,10s,1033,2012,Density Functional Theory Study on Interaction of Hydroperoxyl Radical with Graphene Surface DOI: 10.1143/JJAP.51.10NE33(Journal) (6715493-N) DOI: 10.7567/JJAP.51.10NE33(Journal) ========================================================== Created: 2023-02-01 12:04:40 ConfID: 6715490 CauseID: 1560033390 OtherID: 1363324830 JT: Japanese Journal of Applied Physics MD: Ishii,51,10s,1005,2012,A Methodology for Estimating the Effect of Solar Spectrum on Photovoltaic Module Performance by Using Average Photon Energy and a Water Absorption Band DOI: 10.1143/JJAP.51.10NF05(Journal) (6715490-N) DOI: 10.7567/JJAP.51.10NF05(Journal) ========================================================== Created: 2023-02-01 12:04:44 ConfID: 6715491 CauseID: 1560033392 OtherID: 1363324860 JT: Japanese Journal of Applied Physics MD: Honma,51,11s,1101,2012,A Low-Voltage and High Uniformity Nano-Electro-Mechanical System Tunable Color Filter Based on Subwavelength Grating DOI: 10.1143/JJAP.51.11PA01(Journal) (6715491-N) DOI: 10.7567/JJAP.51.11PA01(Journal) ========================================================== Created: 2023-02-01 12:04:36 ConfID: 6715488 CauseID: 1560033377 OtherID: 1363324708 JT: Japanese Journal of Applied Physics MD: Hongsingthong,51,10s,1003,2012,Development of Boron-Doped ZnO Films with Novel Thin Zn-Rich Film and Their Application to Solar Cells DOI: 10.1143/JJAP.51.10NB03(Journal) (6715488-N) DOI: 10.7567/JJAP.51.10NB03(Journal) ========================================================== Created: 2023-02-01 12:04:37 ConfID: 6715489 CauseID: 1560033378 OtherID: 1363324809 JT: Japanese Journal of Applied Physics MD: Jang,51,10s,1023,2012,Photoelectrochemical Properties of Nanocrystalline Sb6O13, MgSb2O6, and ZnSb2O6-Based Electrodes for Dye-Sensitized Solar Cells DOI: 10.1143/JJAP.51.10NE23(Journal) (6715489-N) DOI: 10.7567/JJAP.51.10NE23(Journal) ========================================================== Created: 2023-02-01 12:04:53 ConfID: 6715502 CauseID: 1560033427 OtherID: 1363324737 JT: Japanese Journal of Applied Physics MD: Xianfeng,51,10s,1005,2012,Growth of Ag(In,Ga)Se2 Films by Modified Three-Stage Method and Influence of Annealing on Performance of Solar Cells DOI: 10.1143/JJAP.51.10NC05(Journal) (6715502-N) DOI: 10.7567/JJAP.51.10NC05(Journal) ========================================================== Created: 2023-02-01 12:04:54 ConfID: 6715503 CauseID: 1560033428 OtherID: 1363324732 JT: Japanese Journal of Applied Physics MD: Janthong,51,10s,1014,2012,Optical Improvement of ZnO-Coated Glass with New Refractive-Index Matching Layer Inserted at Glass/ZnO Interface DOI: 10.1143/JJAP.51.10NB14(Journal) (6715503-N) DOI: 10.7567/JJAP.51.10NB14(Journal) ========================================================== Created: 2023-02-01 12:04:50 ConfID: 6715500 CauseID: 1560033425 OtherID: 1363324720 JT: Japanese Journal of Applied Physics MD: Kushiya,51,10s,1001,2012,CuInSe2-Based Thin-Film Photovoltaic Technology in the Gigawatt Production Era DOI: 10.1143/JJAP.51.10NC01(Journal) (6715500-N) DOI: 10.7567/JJAP.51.10NC01(Journal) ========================================================== Created: 2023-02-01 12:04:53 ConfID: 6715501 CauseID: 1560033426 OtherID: 1363324843 JT: Japanese Journal of Applied Physics MD: Tanemura,51,11s,1102,2012,Fatigue Testing of Polycrystalline Silicon Thin-Film Membrane Using Out-of-Plane Bending Vibration DOI: 10.1143/JJAP.51.11PA02(Journal) (6715501-N) DOI: 10.7567/JJAP.51.11PA02(Journal) ========================================================== Created: 2023-02-01 12:04:46 ConfID: 6715498 CauseID: 1560033416 OtherID: 1363324726 JT: Japanese Journal of Applied Physics MD: Kim,51,10s,1012,2012,Surface Modification of High Haze Front Transparent Conductive Oxide for Silicon Thin Film Solar Cell DOI: 10.1143/JJAP.51.10NB12(Journal) (6715498-N) DOI: 10.7567/JJAP.51.10NB12(Journal) ========================================================== Created: 2023-02-01 12:04:50 ConfID: 6715499 CauseID: 1560033424 OtherID: 1363324835 JT: Japanese Journal of Applied Physics MD: Takei,51,10s,1010,2012,Output Energy Estimation of Si-Based Photovoltaic Modules Using Clearness Index and Air Mass DOI: 10.1143/JJAP.51.10NF10(Journal) (6715499-N) DOI: 10.7567/JJAP.51.10NF10(Journal) ========================================================== Created: 2023-02-01 12:04:45 ConfID: 6715496 CauseID: 1560033410 OtherID: 1363324822 JT: Japanese Journal of Applied Physics MD: Shimizu,51,10s,1004,2012,Failure Assessments for Outside-Exposed Photovoltaic Modules DOI: 10.1143/JJAP.51.10NF04(Journal) (6715496-N) DOI: 10.7567/JJAP.51.10NF04(Journal) ========================================================== Created: 2023-02-01 12:04:48 ConfID: 6715497 CauseID: 1560033411 OtherID: 1363324735 JT: Japanese Journal of Applied Physics MD: Chung,51,10s,1016,2012,Graded Layer Modification for High Efficiency Hydrogenated Amorphous Silicon–Germanium Solar Cells DOI: 10.1143/JJAP.51.10NB16(Journal) (6715497-N) DOI: 10.7567/JJAP.51.10NB16(Journal) ========================================================== Created: 2023-02-01 12:05:01 ConfID: 6715510 CauseID: 1560033457 OtherID: 1363324855 JT: Japanese Journal of Applied Physics MD: Yamada,51,11s,1101,2012,Effect of Ferroelectric Polarization on Carrier Transport in Controlled Polarization-Type Ferroelectric Gate Field-Effect Transistors with Poly(vinylidene fluoride–tetrafluoroethylene)/ZnO Heterostructure DOI: 10.1143/JJAP.51.11PB01(Journal) (6715510-N) DOI: 10.7567/JJAP.51.11PB01(Journal) ========================================================== Created: 2023-02-01 12:05:04 ConfID: 6715511 CauseID: 1560033459 OtherID: 1363324856 JT: Japanese Journal of Applied Physics MD: Herrick,51,11s,1101,2012,Reliability of Vertical-Cavity Surface-Emitting Lasers DOI: 10.1143/JJAP.51.11PC01(Journal) (6715511-N) DOI: 10.7567/JJAP.51.11PC01(Journal) ========================================================== Created: 2023-02-01 12:04:56 ConfID: 6715508 CauseID: 1560033448 OtherID: 1363324831 JT: Japanese Journal of Applied Physics MD: Matsuda,51,10s,1007,2012,Microscopic Degradation Mechanisms in Silicon Photovoltaic Module under Long-Term Environmental Exposure DOI: 10.1143/JJAP.51.10NF07(Journal) (6715508-N) DOI: 10.7567/JJAP.51.10NF07(Journal) ========================================================== Created: 2023-02-01 12:04:57 ConfID: 6715509 CauseID: 1560033449 OtherID: 1363324873 JT: Japanese Journal of Applied Physics MD: Motohisa,51,11s,1107,2012,Light Absorption in Semiconductor Nanowire Arrays with Multijunction Cell Structures DOI: 10.1143/JJAP.51.11PE07(Journal) (6715509-N) DOI: 10.7567/JJAP.51.11PE07(Journal) ========================================================== Created: 2023-02-01 12:04:55 ConfID: 6715506 CauseID: 1560033442 OtherID: 1363324754 JT: Japanese Journal of Applied Physics MD: Yatsushiro,51,10s,1025,2012,Effects of Antimony Doping on Cu(In1-x,Gax)Se2 Thin Films and Solar Cells DOI: 10.1143/JJAP.51.10NC25(Journal) (6715506-N) DOI: 10.7567/JJAP.51.10NC25(Journal) ========================================================== Created: 2023-02-01 12:04:58 ConfID: 6715507 CauseID: 1560033444 OtherID: 1363324743 JT: Japanese Journal of Applied Physics MD: Pawar,51,10s,1027,2012,Fabrication of Cu2ZnSnS4 Thin Film Solar Cell Using Single Step Electrodeposition Method DOI: 10.1143/JJAP.51.10NC27(Journal) (6715507-N) DOI: 10.7567/JJAP.51.10NC27(Journal) ========================================================== Created: 2023-02-01 12:04:51 ConfID: 6715504 CauseID: 1560033431 OtherID: 1363324747 JT: Japanese Journal of Applied Physics MD: Nguyen,51,10s,1023,2012,Spray-Pyrolyzed Three-Dimensional CuInS2 Solar Cells on Nanocrystalline-Titania Electrodes with Chemical-Bath-Deposited Inx(OH)ySz Buffer Layers DOI: 10.1143/JJAP.51.10NC23(Journal) (6715504-N) DOI: 10.7567/JJAP.51.10NC23(Journal) ========================================================== Created: 2023-02-01 12:04:55 ConfID: 6715505 CauseID: 1560033441 OtherID: 1363324724 JT: Japanese Journal of Applied Physics MD: Komaki,51,10s,1004,2012,Fabrication and Characterization of Cu(In,Ga)(S,Se)2-Based Solar Cells DOI: 10.1143/JJAP.51.10NC04(Journal) (6715505-N) DOI: 10.7567/JJAP.51.10NC04(Journal) ========================================================== Created: 2023-02-01 12:05:13 ConfID: 6715518 CauseID: 1560033496 OtherID: 1363324825 JT: Japanese Journal of Applied Physics MD: Miyashita,51,10s,1012,2012,Measuring Method of Moisture Ingress into Photovoltaic Modules DOI: 10.1143/JJAP.51.10NF12(Journal) (6715518-N) DOI: 10.7567/JJAP.51.10NF12(Journal) ========================================================== Created: 2023-02-01 12:05:11 ConfID: 6715519 CauseID: 1560033500 OtherID: 1363324874 JT: Japanese Journal of Applied Physics MD: Lu,51,11s,1108,2012,Vertical Silicon Nanowire Diode with Nickel Silicide Induced Dopant Segregation DOI: 10.1143/JJAP.51.11PE08(Journal) (6715519-N) DOI: 10.7567/JJAP.51.11PE08(Journal) ========================================================== Created: 2023-02-01 12:05:06 ConfID: 6715516 CauseID: 1560033479 OtherID: 1363324734 JT: Japanese Journal of Applied Physics MD: Ie,51,10s,1008,2012,Synthesis, Properties, and Photovoltaic Performance of Copolymers Based on Difluorodioxocyclopentene-Annelated Thiophene DOI: 10.1143/JJAP.51.10NC08(Journal) (6715516-N) DOI: 10.7567/JJAP.51.10NC08(Journal) ========================================================== Created: 2023-02-01 12:05:08 ConfID: 6715517 CauseID: 1560033484 OtherID: 1363324721 JT: Japanese Journal of Applied Physics MD: Hamazaki,51,10s,1010,2012,Optimization of Compositional Ratio of Zn(O,S) Window Layer in CuInS2 Solar Cells DOI: 10.1143/JJAP.51.10NC10(Journal) (6715517-N) DOI: 10.7567/JJAP.51.10NC10(Journal) ========================================================== Created: 2023-02-01 12:05:01 ConfID: 6715514 CauseID: 1560033462 OtherID: 1363324863 JT: Japanese Journal of Applied Physics MD: Albino,51,11s,1106,2012,Study on the Structural, Electrical, and Magnetic Properties of Pure and (Pr3+,Co2+)-Doped BiFeO3 Powders and Thin Films DOI: 10.1143/JJAP.51.11PG06(Journal) (6715514-N) DOI: 10.7567/JJAP.51.11PG06(Journal) ========================================================== Created: 2023-02-01 12:05:02 ConfID: 6715515 CauseID: 1560033464 OtherID: 1363324845 JT: Japanese Journal of Applied Physics MD: Yamamoto,51,11s,1102,2012,Nonvolatile Power-Gating Field-Programmable Gate Array Using Nonvolatile Static Random Access Memory and Nonvolatile Flip-Flops Based on Pseudo-Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions DOI: 10.1143/JJAP.51.11PB02(Journal) (6715515-N) DOI: 10.7567/JJAP.51.11PB02(Journal) ========================================================== Created: 2023-02-01 12:05:00 ConfID: 6715512 CauseID: 1560033460 OtherID: 1363324741 JT: Japanese Journal of Applied Physics MD: Jao,51,10s,1030,2012,Synthesis and Characterization of Wurtzite Cu2ZnSnS4 Nanocrystals DOI: 10.1143/JJAP.51.10NC30(Journal) (6715512-N) DOI: 10.7567/JJAP.51.10NC30(Journal) ========================================================== Created: 2023-02-01 12:05:00 ConfID: 6715513 CauseID: 1560033461 OtherID: 1363324848 JT: Japanese Journal of Applied Physics MD: Lotty,51,11s,1103,2012,Porous to Nonporous Transition in the Morphology of Metal Assisted Etched Silicon Nanowires DOI: 10.1143/JJAP.51.11PE03(Journal) (6715513-N) DOI: 10.7567/JJAP.51.11PE03(Journal) ========================================================== Created: 2023-02-01 12:04:06 ConfID: 6715462 CauseID: 1560033277 OtherID: 1363324784 JT: Japanese Journal of Applied Physics MD: Sodabanlu,51,10s,1016,2012,Impact of Strain Accumulation on InGaAs/GaAsP Multiple-Quantum-Well Solar Cells: Direct Correlation between In situ Strain Measurement and Cell Performances DOI: 10.1143/JJAP.51.10ND16(Journal) (6715462-N) DOI: 10.7567/JJAP.51.10ND16(Journal) ========================================================== Created: 2023-02-01 12:04:06 ConfID: 6715463 CauseID: 1560033278 OtherID: 1363324788 JT: Japanese Journal of Applied Physics MD: Sadamasu,51,10s,1005,2012,Differences in Dye-Sensitized Photovoltaic Behaviors between SnO2 and TiO2 Electrodes DOI: 10.1143/JJAP.51.10NE05(Journal) (6715463-N) DOI: 10.7567/JJAP.51.10NE05(Journal) ========================================================== Created: 2023-02-01 12:04:00 ConfID: 6715460 CauseID: 1560033270 OtherID: 1363324733 JT: Japanese Journal of Applied Physics MD: Rissom,51,10s,1002,2012,Influence of Mo Back-Contact Oxidation on Properties of CIGSe2 Thin Film Solar Cells on Glass Substrates DOI: 10.1143/JJAP.51.10NC02(Journal) (6715460-N) DOI: 10.7567/JJAP.51.10NC02(Journal) ========================================================== Created: 2023-02-01 12:04:04 ConfID: 6715461 CauseID: 1560033272 OtherID: 1363324738 JT: Japanese Journal of Applied Physics MD: Yamamoto,51,10s,1006,2012,Fabrication and Characterization of Wide-Gap ZnCuInS2 Solar Cells DOI: 10.1143/JJAP.51.10NC06(Journal) (6715461-N) DOI: 10.7567/JJAP.51.10NC06(Journal) ========================================================== Created: 2023-02-01 12:03:55 ConfID: 6715458 CauseID: 1560033261 OtherID: 1363324710 JT: Japanese Journal of Applied Physics MD: Chen,51,10s,1011,2012,Crystalline Silicon Cells Fabricated by Different Preclean Processes DOI: 10.1143/JJAP.51.10NA11(Journal) (6715458-N) DOI: 10.7567/JJAP.51.10NA11(Journal) ========================================================== Created: 2023-02-01 12:03:56 ConfID: 6715459 CauseID: 1560033266 OtherID: 1363324799 JT: Japanese Journal of Applied Physics MD: Hong,51,10s,1013,2012,Surface Nanostructure Optimization for GaAs Solar Cell Application DOI: 10.1143/JJAP.51.10ND13(Journal) (6715459-N) DOI: 10.7567/JJAP.51.10ND13(Journal) ========================================================== Created: 2023-02-01 12:03:54 ConfID: 6715456 CauseID: 1560033247 OtherID: 1363324714 JT: Japanese Journal of Applied Physics MD: Lee,51,10s,1012,2012,Wettability and Reaction between Solder and Silver Busbar during the Tabbing Process for Silicon Photovoltaic Modules DOI: 10.1143/JJAP.51.10NA12(Journal) (6715456-N) DOI: 10.7567/JJAP.51.10NA12(Journal) ========================================================== Created: 2023-02-01 12:03:51 ConfID: 6715457 CauseID: 1560033249 OtherID: 1363324715 JT: Japanese Journal of Applied Physics MD: Shim,51,10s,1014,2012,Industrial 6 Inch Multicrystalline Silicon Solar Cells Fabricated Using Reactive Ion Etching with Efficiency Exceeding 18% DOI: 10.1143/JJAP.51.10NA14(Journal) (6715457-N) DOI: 10.7567/JJAP.51.10NA14(Journal) ========================================================== Created: 2023-02-01 12:04:17 ConfID: 6715470 CauseID: 1560033310 OtherID: 1363324820 JT: Japanese Journal of Applied Physics MD: Numata,51,10s,1013,2012,Influences of Electron-Withdrawing Groups of Organic Dyes on Spectral Property and Photovoltaic Performance in Dye-sensitized Solar Cells Application DOI: 10.1143/JJAP.51.10NE13(Journal) (6715470-N) DOI: 10.7567/JJAP.51.10NE13(Journal) ========================================================== Created: 2023-02-01 12:04:18 ConfID: 6715471 CauseID: 1560033312 OtherID: 1363324819 JT: Japanese Journal of Applied Physics MD: Sano,51,10s,1017,2012,Indoline Dye-Coupled Polyviologen: Its Electrochemical Property and Electropolymerization DOI: 10.1143/JJAP.51.10NE17(Journal) (6715471-N) DOI: 10.7567/JJAP.51.10NE17(Journal) ========================================================== Created: 2023-02-01 12:04:15 ConfID: 6715468 CauseID: 1560033305 OtherID: 1363324815 JT: Japanese Journal of Applied Physics MD: Zhang,51,10s,1015,2012,Directly Determine an Additive-Induced Shift in Quasi-Fermi Level of TiO2 Films in Dye-Sensitized Solar Cells DOI: 10.1143/JJAP.51.10NE15(Journal) (6715468-N) DOI: 10.7567/JJAP.51.10NE15(Journal) ========================================================== Created: 2023-02-01 12:04:16 ConfID: 6715469 CauseID: 1560033307 OtherID: 1363324740 JT: Japanese Journal of Applied Physics MD: Shirakata,51,10s,1013,2012,Characterization of Cu(In,Ga)Se2 Solar Cell Fabrication Process by Photoluminescence DOI: 10.1143/JJAP.51.10NC13(Journal) (6715469-N) DOI: 10.7567/JJAP.51.10NC13(Journal) ========================================================== Created: 2023-02-01 12:04:11 ConfID: 6715466 CauseID: 1560033293 OtherID: 1363324761 JT: Japanese Journal of Applied Physics MD: Vequizo,51,10s,1038,2012,Fabrication of Electrodeposited SnS/SnO2 Heterojunction Solar Cells DOI: 10.1143/JJAP.51.10NC38(Journal) (6715466-N) DOI: 10.7567/JJAP.51.10NC38(Journal) ========================================================== Created: 2023-02-01 12:04:14 ConfID: 6715467 CauseID: 1560033297 OtherID: 1363324798 JT: Japanese Journal of Applied Physics MD: Kawata,51,10s,1006,2012,Nondestructive Three-Dimensional Observation of the Electrolyte in a Dye-Sensitised Solar Cell Combined with the Local Photocurrent Dynamics DOI: 10.1143/JJAP.51.10NE06(Journal) (6715467-N) DOI: 10.7567/JJAP.51.10NE06(Journal) ========================================================== Created: 2023-02-01 12:04:09 ConfID: 6715464 CauseID: 1560033283 OtherID: 1363324764 JT: Japanese Journal of Applied Physics MD: Chelvanathan,51,10s,1032,2012,Effects of Transition Metal Dichalcogenide Molybdenum Disulfide Layer Formation in Copper–Zinc–Tin–Sulfur Solar Cells from Numerical Analysis DOI: 10.1143/JJAP.51.10NC32(Journal) (6715464-N) DOI: 10.7567/JJAP.51.10NC32(Journal) ========================================================== Created: 2023-02-01 12:04:10 ConfID: 6715465 CauseID: 1560033291 OtherID: 1363324730 JT: Japanese Journal of Applied Physics MD: Knecht,51,10s,1007,2012,Investigation of Cu(In,Ga)Se2 Solar Cell Performance Deviations in Nominally Equal Absorbers DOI: 10.1143/JJAP.51.10NC07(Journal) (6715465-N) DOI: 10.7567/JJAP.51.10NC07(Journal) ========================================================== Created: 2023-02-01 12:04:25 ConfID: 6715478 CauseID: 1560033341 OtherID: 1363324802 JT: Japanese Journal of Applied Physics MD: Seo,51,10s,1021,2012,Improvement on the Long-Term Stability of Dye-Sensitized Solar Module by Structural Alternation DOI: 10.1143/JJAP.51.10NE21(Journal) (6715478-N) DOI: 10.7567/JJAP.51.10NE21(Journal) ========================================================== Created: 2023-02-01 12:04:26 ConfID: 6715479 CauseID: 1560033343 OtherID: 1363324780 JT: Japanese Journal of Applied Physics MD: Yang,51,10s,1007,2012,Ag Interlayered Transparent Conducting Electrode for Photovoltaic Cells DOI: 10.1143/JJAP.51.10NE07(Journal) (6715479-N) DOI: 10.7567/JJAP.51.10NE07(Journal) ========================================================== Created: 2023-02-01 12:04:24 ConfID: 6715476 CauseID: 1560033327 OtherID: 1363324817 JT: Japanese Journal of Applied Physics MD: Svrcek,51,10s,1025,2012,Integration of Surfactant-Free Silicon Nanocrystal in Hybrid Solar Cells DOI: 10.1143/JJAP.51.10NE25(Journal) (6715476-N) DOI: 10.7567/JJAP.51.10NE25(Journal) ========================================================== Created: 2023-02-01 12:04:28 ConfID: 6715477 CauseID: 1560033337 OtherID: 1363324818 JT: Japanese Journal of Applied Physics MD: Tayagaki,51,10s,1024,2012,Influence of Thermal Annealing on the Carrier Extraction in Ge/Si Quantum Dot Solar Cells DOI: 10.1143/JJAP.51.10NE24(Journal) (6715477-N) DOI: 10.7567/JJAP.51.10NE24(Journal) ========================================================== Created: 2023-02-01 12:04:21 ConfID: 6715474 CauseID: 1560033321 OtherID: 1363324800 JT: Japanese Journal of Applied Physics MD: Kawano,51,10s,1017,2012,N Substitution in GaAs(001) Surface under an Atmosphere of Hydrogen DOI: 10.1143/JJAP.51.10ND17(Journal) (6715474-N) DOI: 10.7567/JJAP.51.10ND17(Journal) ========================================================== Created: 2023-02-01 12:04:24 ConfID: 6715475 CauseID: 1560033326 OtherID: 1363324816 JT: Japanese Journal of Applied Physics MD: Lee,51,10s,1019,2012,Deposition of TiO2 Passivation Layer by Plasma Enhanced Chemical Vapor Deposition between the Transparent Conducting Oxide and Mesoporous TiO2 Electrode in Dye Sensitized Solar Cells DOI: 10.1143/JJAP.51.10NE19(Journal) (6715475-N) DOI: 10.7567/JJAP.51.10NE19(Journal) ========================================================== Created: 2023-02-01 12:04:20 ConfID: 6715472 CauseID: 1560033318 OtherID: 1363324746 JT: Japanese Journal of Applied Physics MD: Nakashima,51,10s,1015,2012,Wide-Gap Cu(In,Ga)Se2 Solar Cells with Zn(O,S) Buffer Layers Prepared by Atomic Layer Deposition DOI: 10.1143/JJAP.51.10NC15(Journal) (6715472-N) DOI: 10.7567/JJAP.51.10NC15(Journal) ========================================================== Created: 2023-02-01 12:04:20 ConfID: 6715473 CauseID: 1560033319 OtherID: 1363324702 JT: Japanese Journal of Applied Physics MD: Meguro,51,10s,1002,2012,Advanced Light Trapping of High-Efficiency Thin Film Silicon Solar Cells DOI: 10.1143/JJAP.51.10NB02(Journal) (6715473-N) DOI: 10.7567/JJAP.51.10NB02(Journal) ========================================================== Created: 2023-02-01 12:04:40 ConfID: 6715486 CauseID: 1560033374 OtherID: 1363324803 JT: Japanese Journal of Applied Physics MD: Hiate,51,10s,1030,2012,Electrospray-Deposited Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) for Poly(3-hexylthiophene):Phenyl-C61-Butyric Acid Methyl Ester Photovoltaic Cells DOI: 10.1143/JJAP.51.10NE30(Journal) (6715486-N) DOI: 10.7567/JJAP.51.10NE30(Journal) ========================================================== Created: 2023-02-01 12:04:35 ConfID: 6715487 CauseID: 1560033375 OtherID: 1363324707 JT: Japanese Journal of Applied Physics MD: Sobajima,51,10s,1005,2012,Fundamental Properties of Titanium-Doped Indium Oxide and Its Application to Thin-Film Silicon Solar Cells DOI: 10.1143/JJAP.51.10NB05(Journal) (6715487-N) DOI: 10.7567/JJAP.51.10NB05(Journal) ========================================================== Created: 2023-02-01 12:04:35 ConfID: 6715484 CauseID: 1560033370 OtherID: 1363324808 JT: Japanese Journal of Applied Physics MD: Koo,51,10s,1018,2012,Effect of Cu2O Doping in TiO2 Films on Device Performance of Dye-Sensitized Solar Cells DOI: 10.1143/JJAP.51.10NE18(Journal) (6715484-N) DOI: 10.7567/JJAP.51.10NE18(Journal) ========================================================== Created: 2023-02-01 12:04:39 ConfID: 6715485 CauseID: 1560033373 OtherID: 1363324750 JT: Japanese Journal of Applied Physics MD: Akaki,51,10s,1019,2012,Effect of H2S Annealing on Sb-Doped Cu–In–S Thin Films Prepared by Vacuum Evaporation DOI: 10.1143/JJAP.51.10NC19(Journal) (6715485-N) DOI: 10.7567/JJAP.51.10NC19(Journal) ========================================================== Created: 2023-02-01 12:04:30 ConfID: 6715482 CauseID: 1560033353 OtherID: 1363324806 JT: Japanese Journal of Applied Physics MD: Kim,51,10s,1029,2012,Effect of Sol–Gel-Derived ZnO Interfacial Layer on the Photovoltaic Properties of Polymer Solar Cells DOI: 10.1143/JJAP.51.10NE29(Journal) (6715482-N) DOI: 10.7567/JJAP.51.10NE29(Journal) ========================================================== Created: 2023-02-01 12:04:31 ConfID: 6715483 CauseID: 1560033359 OtherID: 1363324716 JT: Japanese Journal of Applied Physics MD: Li,51,10s,1018,2012,A New Attempt at Alkaline Texturization of Monocrystaline Silicon with Anionic Surfactant as the Additive DOI: 10.1143/JJAP.51.10NA18(Journal) (6715483-N) DOI: 10.7567/JJAP.51.10NA18(Journal) ========================================================== Created: 2023-02-01 12:04:27 ConfID: 6715480 CauseID: 1560033344 OtherID: 1363324801 JT: Japanese Journal of Applied Physics MD: Iwasaki,51,10s,1026,2012,Fabrication of Graded Band Gap Amorphous Carbon Nitride Thin Films for New Generation Photovoltaic Applications DOI: 10.1143/JJAP.51.10NE26(Journal) (6715480-N) DOI: 10.7567/JJAP.51.10NE26(Journal) ========================================================== Created: 2023-02-01 12:04:27 ConfID: 6715481 CauseID: 1560033345 OtherID: 1363324719 JT: Japanese Journal of Applied Physics MD: Lin,51,10s,1017,2012,Excellent Passivation of p+ Silicon Surfaces by Inline Plasma Enhanced Chemical Vapor Deposited SiOx/AlOx Stacks DOI: 10.1143/JJAP.51.10NA17(Journal) (6715481-N) DOI: 10.7567/JJAP.51.10NA17(Journal) ========================================================== Created: 2023-02-01 12:03:16 ConfID: 6715430 CauseID: 1560033137 OtherID: 1363324762 JT: Japanese Journal of Applied Physics MD: Nwofe,51,10s,1036,2012,Structural, Optical, and Electro-Optical Properties of Thermally Evaporated Tin Sulphide Layers DOI: 10.1143/JJAP.51.10NC36(Journal) (6715430-N) DOI: 10.7567/JJAP.51.10NC36(Journal) ========================================================== Created: 2023-02-01 12:03:24 ConfID: 6715431 CauseID: 1560033148 OtherID: 1363324744 JT: Japanese Journal of Applied Physics MD: Kuo,51,10s,1014,2012,Modeling and Optimization of Sub-Wavelength Grating Nanostructures on Cu(In,Ga)Se2 Solar Cell DOI: 10.1143/JJAP.51.10NC14(Journal) (6715431-N) DOI: 10.7567/JJAP.51.10NC14(Journal) ========================================================== Created: 2023-02-01 12:03:19 ConfID: 6715428 CauseID: 1560033135 OtherID: 1363321544 JT: Japanese Journal of Applied Physics MD: Lee,51,9s2,904,2012,Effect of Sintering Temperature on Electrical Properties of Chip on Glass Module with Direct Printing Method DOI: 10.1143/JJAP.51.09MJ04(Journal) (6715428-N) DOI: 10.7567/JJAP.51.09MJ04(Journal) ========================================================== Created: 2023-02-01 12:03:16 ConfID: 6715429 CauseID: 1560033136 OtherID: 1363324682 JT: Japanese Journal of Applied Physics MD: Chan,51,10s,1001,2012,Study of SF6/N2O Microwave Plasma for Surface Texturing of Multicrystalline (<150 µm) Solar Substrates DOI: 10.1143/JJAP.51.10NA01(Journal) (6715429-N) DOI: 10.7567/JJAP.51.10NA01(Journal) ========================================================== Created: 2023-02-01 12:03:13 ConfID: 6715426 CauseID: 1560033121 OtherID: 1363321540 JT: Japanese Journal of Applied Physics MD: Wang,51,9s2,902,2012,Fabrication of Organic Thin-Film Transistors Based on Cross-Linked Hybrid Dielectric Materials DOI: 10.1143/JJAP.51.09MJ02(Journal) (6715426-N) DOI: 10.7567/JJAP.51.09MJ02(Journal) ========================================================== Created: 2023-02-01 12:03:15 ConfID: 6715427 CauseID: 1560033132 OtherID: 1363321518 JT: Japanese Journal of Applied Physics MD: Zhuang,51,9s2,908,2012,Fabrication and Characterization of All-Transparent Li0.15Ni0.85O/In–Mg0.5Zn0.5O Thin-Film p–n Heterojunction Diodes with Cube-on-Cube Epitaxial Structures DOI: 10.1143/JJAP.51.09MF08(Journal) (6715427-N) DOI: 10.7567/JJAP.51.09MF08(Journal) ========================================================== Created: 2023-02-01 12:03:11 ConfID: 6715424 CauseID: 1560033117 OtherID: 1363324736 JT: Japanese Journal of Applied Physics MD: Ohdaira,51,10s,1015,2012,Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization DOI: 10.1143/JJAP.51.10NB15(Journal) (6715424-N) DOI: 10.7567/JJAP.51.10NB15(Journal) ========================================================== Created: 2023-02-01 12:03:11 ConfID: 6715425 CauseID: 1560033118 OtherID: 1363324722 JT: Japanese Journal of Applied Physics MD: Kobayashi,51,10s,1009,2012,Transparent Conducting ZnO:B Thin Films Grown by Ultraviolet Light Assisted Metal Organic Chemical Vapor Deposition Using Triethylboron for Cu(In,Ga)Se2 Solar Cells DOI: 10.1143/JJAP.51.10NC09(Journal) (6715425-N) DOI: 10.7567/JJAP.51.10NC09(Journal) ========================================================== Created: 2023-02-01 12:03:26 ConfID: 6715438 CauseID: 1560033172 OtherID: 1363324778 JT: Japanese Journal of Applied Physics MD: Deguchi,51,10s,1037,2012,ZnInS Thin Film Solar Cell Fabricated by Sputtering Process DOI: 10.1143/JJAP.51.10NC37(Journal) (6715438-N) DOI: 10.7567/JJAP.51.10NC37(Journal) ========================================================== Created: 2023-02-01 12:03:27 ConfID: 6715439 CauseID: 1560033173 OtherID: 1363324767 JT: Japanese Journal of Applied Physics MD: Song,51,10s,1039,2012,Improvement of Electrochemically Deposited Cu2O/ZnO Heterojunction Solar Cells by Modulation of Deposition Current DOI: 10.1143/JJAP.51.10NC39(Journal) (6715439-N) DOI: 10.7567/JJAP.51.10NC39(Journal) ========================================================== Created: 2023-02-01 12:03:29 ConfID: 6715436 CauseID: 1560033169 OtherID: 1363321558 JT: Japanese Journal of Applied Physics MD: Hu,51,9s2,905,2012,Hotspot Location Shift in the High-Power Phosphor-Converted White Light-Emitting Diode Packages DOI: 10.1143/JJAP.51.09MK05(Journal) (6715436-N) DOI: 10.7567/JJAP.51.09MK05(Journal) ========================================================== Created: 2023-02-01 12:03:26 ConfID: 6715437 CauseID: 1560033171 OtherID: 1363324688 JT: Japanese Journal of Applied Physics MD: Sugimura,51,10s,1002,2012,Spatially Resolved Electroluminescence Imaging of Shunt Sources in Crystalline Silicon Solar Cells DOI: 10.1143/JJAP.51.10NA02(Journal) (6715437-N) DOI: 10.7567/JJAP.51.10NA02(Journal) ========================================================== Created: 2023-02-01 12:03:22 ConfID: 6715434 CauseID: 1560033158 OtherID: 1363321525 JT: Japanese Journal of Applied Physics MD: Yu,51,9s2,911,2012,Influences of Gate Bias and Light Stresses on Device Characteristics of High-Energy Electron-Beam-Irradiated Indium Gallium Zinc Oxide Based Thin Film Transistors DOI: 10.1143/JJAP.51.09MF11(Journal) (6715434-N) DOI: 10.7567/JJAP.51.09MF11(Journal) ========================================================== Created: 2023-02-01 12:03:25 ConfID: 6715435 CauseID: 1560033166 OtherID: 1363324753 JT: Japanese Journal of Applied Physics MD: Kaigawa,51,10s,1017,2012,Dependence of the Properties of Cu(In,Ga)S2/Mo Films Prepared by Two-Stage Evaporation Method on Degree of Vacuum during Deposition DOI: 10.1143/JJAP.51.10NC17(Journal) (6715435-N) DOI: 10.7567/JJAP.51.10NC17(Journal) ========================================================== Created: 2023-02-01 12:03:23 ConfID: 6715432 CauseID: 1560033152 OtherID: 1363324725 JT: Japanese Journal of Applied Physics MD: Okamoto,51,10s,1012,2012,Effects of Antimony Doping in Polycrystalline CdTe Thin-Film Solar Cells DOI: 10.1143/JJAP.51.10NC12(Journal) (6715432-N) DOI: 10.7567/JJAP.51.10NC12(Journal) ========================================================== Created: 2023-02-01 12:03:21 ConfID: 6715433 CauseID: 1560033155 OtherID: 1363321549 JT: Japanese Journal of Applied Physics MD: Jang,51,9s2,902,2012,Carrier Transport Mechanism at the Interface between Metals and p-Type III–Nitrides Having Different Surface Electronic Structures DOI: 10.1143/JJAP.51.09MK02(Journal) (6715433-N) DOI: 10.7567/JJAP.51.09MK02(Journal) ========================================================== Created: 2023-02-01 12:03:39 ConfID: 6715446 CauseID: 1560033202 OtherID: 1363324713 JT: Japanese Journal of Applied Physics MD: Sai,51,10s,1007,2012,Flattened Light-Scattering Substrate and Its Application to Thin-Film Silicon Solar Cells DOI: 10.1143/JJAP.51.10NB07(Journal) (6715446-N) DOI: 10.7567/JJAP.51.10NB07(Journal) ========================================================== Created: 2023-02-01 12:03:35 ConfID: 6715447 CauseID: 1560033203 OtherID: 1363324705 JT: Japanese Journal of Applied Physics MD: Nishimura,51,10s,1015,2012,Improved Electronic Properties of Laser-Doped Emitters by Reducing Surface Roughness DOI: 10.1143/JJAP.51.10NA15(Journal) (6715447-N) DOI: 10.7567/JJAP.51.10NA15(Journal) ========================================================== Created: 2023-02-01 12:03:38 ConfID: 6715444 CauseID: 1560033199 OtherID: 1363324763 JT: Japanese Journal of Applied Physics MD: Takeda,51,10s,1003,2012,Hot-Carrier Extraction from Intermediate-Band Absorbers through Quantum-Well Energy-Selective Contacts DOI: 10.1143/JJAP.51.10ND03(Journal) (6715444-N) DOI: 10.7567/JJAP.51.10ND03(Journal) ========================================================== Created: 2023-02-01 12:03:39 ConfID: 6715445 CauseID: 1560033201 OtherID: 1363324709 JT: Japanese Journal of Applied Physics MD: Yamada,51,10s,1009,2012,Effects of Surface Temperature on High-Rate Etching of Silicon by Narrow-Gap Microwave Hydrogen Plasma DOI: 10.1143/JJAP.51.10NA09(Journal) (6715445-N) DOI: 10.7567/JJAP.51.10NA09(Journal) ========================================================== Created: 2023-02-01 12:03:33 ConfID: 6715442 CauseID: 1560033187 OtherID: 1363324712 JT: Japanese Journal of Applied Physics MD: Hallam,51,10s,1008,2012,Record Efficiency on Large Area P-Type Czochralski Silicon Substrates DOI: 10.1143/JJAP.51.10NA08(Journal) (6715442-N) DOI: 10.7567/JJAP.51.10NA08(Journal) ========================================================== Created: 2023-02-01 12:03:31 ConfID: 6715443 CauseID: 1560033190 OtherID: 1363324695 JT: Japanese Journal of Applied Physics MD: Ji,51,10s,1005,2012,The Emitter Having Microcrystalline Surface in Silicon Heterojunction Interdigitated Back Contact Solar Cells DOI: 10.1143/JJAP.51.10NA05(Journal) (6715443-N) DOI: 10.7567/JJAP.51.10NA05(Journal) ========================================================== Created: 2023-02-01 12:03:32 ConfID: 6715440 CauseID: 1560033183 OtherID: 1363321551 JT: Japanese Journal of Applied Physics MD: Oh,51,9s2,916,2012,Development of Photolithography Process for Printed Circuit Board Using Liquid Crystal Mask in Place of Photomask DOI: 10.1143/JJAP.51.09MF16(Journal) (6715440-N) DOI: 10.7567/JJAP.51.09MF16(Journal) ========================================================== Created: 2023-02-01 12:03:34 ConfID: 6715441 CauseID: 1560033185 OtherID: 1363324777 JT: Japanese Journal of Applied Physics MD: Jones,51,10s,1001,2012,Evolution of Multijunction Solar Cell Technology for Concentrating Photovoltaics DOI: 10.1143/JJAP.51.10ND01(Journal) (6715441-N) DOI: 10.7567/JJAP.51.10ND01(Journal) ========================================================== Created: 2023-02-01 12:03:50 ConfID: 6715454 CauseID: 1560033242 OtherID: 1363324704 JT: Japanese Journal of Applied Physics MD: Sakata,51,10s,1013,2012,Low-Temperature Back-Surface-Field Structures Applied to Crystalline Silicon Solar Cells: Two-Step Growth with Hydrogen Plasma Treatment for Improving the Reproducibility DOI: 10.1143/JJAP.51.10NA13(Journal) (6715454-N) DOI: 10.7567/JJAP.51.10NA13(Journal) ========================================================== Created: 2023-02-01 12:03:50 ConfID: 6715455 CauseID: 1560033243 OtherID: 1363324755 JT: Japanese Journal of Applied Physics MD: Shigemi,51,10s,1022,2012,Surface Stabilities of Various Crystal Faces of CuInSe2 and Related Compounds by First-Principles Calculation DOI: 10.1143/JJAP.51.10NC22(Journal) (6715455-N) DOI: 10.7567/JJAP.51.10NC22(Journal) ========================================================== Created: 2023-02-01 12:03:47 ConfID: 6715452 CauseID: 1560033234 OtherID: 1363324749 JT: Japanese Journal of Applied Physics MD: Park,51,10s,1021,2012,Control of Ga Distribution in Cu(In,Ga)Se2 Photovoltaic Absorber by Solid-State Selenizatoin of CuGa/In/Se/In/CuGa Stack DOI: 10.1143/JJAP.51.10NC21(Journal) (6715452-N) DOI: 10.7567/JJAP.51.10NC21(Journal) ========================================================== Created: 2023-02-01 12:03:48 ConfID: 6715453 CauseID: 1560033235 OtherID: 1363321552 JT: Japanese Journal of Applied Physics MD: Kim,51,9s2,905,2012,Wireless Power Transmission to Organic Light Emitting Diode Lighting Panel with Magnetically Coupled Resonator DOI: 10.1143/JJAP.51.09MH05(Journal) (6715453-N) DOI: 10.7567/JJAP.51.09MH05(Journal) ========================================================== Created: 2023-02-01 12:03:40 ConfID: 6715450 CauseID: 1560033216 OtherID: 1363324768 JT: Japanese Journal of Applied Physics MD: Ding,51,10s,1008,2012,Current–Voltage Characteristics of GaAs/AlGaAs Coupled Multiple Quantum Well Solar Cells DOI: 10.1143/JJAP.51.10ND08(Journal) (6715450-N) DOI: 10.7567/JJAP.51.10ND08(Journal) ========================================================== Created: 2023-02-01 12:03:45 ConfID: 6715451 CauseID: 1560033228 OtherID: 1363321541 JT: Japanese Journal of Applied Physics MD: Chu,51,9s2,904,2012,Improved Organic Light Emitting Diodes Using Cryogenic LiF/Al Deposition DOI: 10.1143/JJAP.51.09MH04(Journal) (6715451-N) DOI: 10.7567/JJAP.51.09MH04(Journal) ========================================================== Created: 2023-02-01 12:03:37 ConfID: 6715448 CauseID: 1560033204 OtherID: 1363324703 JT: Japanese Journal of Applied Physics MD: Sago,51,10s,1001,2012,Mapping Characterization of SnO2:F Transparent Conductive Oxide Layers by Ellipsometry Technique DOI: 10.1143/JJAP.51.10NB01(Journal) (6715448-N) DOI: 10.7567/JJAP.51.10NB01(Journal) ========================================================== Created: 2023-02-01 12:03:37 ConfID: 6715449 CauseID: 1560033206 OtherID: 1363324742 JT: Japanese Journal of Applied Physics MD: Uchikoshi,51,10s,1020,2012,Control of Grain in Cu(In,Ga)Se2 Thin Films Prepared by Selenization Method Using Diethylselenide DOI: 10.1143/JJAP.51.10NC20(Journal) (6715449-N) DOI: 10.7567/JJAP.51.10NC20(Journal) ========================================================== Created: 2023-02-01 12:02:41 ConfID: 6715398 CauseID: 1560033018 OtherID: 1363321514 JT: Japanese Journal of Applied Physics MD: Kim,51,9s2,910,2012,Electrical Instabilities in Amorphous InGaZnO Thin Film Transistors with Si3N4 and Si3N4/Al2O3 Gate Dielectrics DOI: 10.1143/JJAP.51.09MF10(Journal) (6715398-N) DOI: 10.7567/JJAP.51.09MF10(Journal) ========================================================== Created: 2023-02-01 12:02:42 ConfID: 6715399 CauseID: 1560033020 OtherID: 1363324701 JT: Japanese Journal of Applied Physics MD: Wang,51,10s,1008,2012,Analysis of Optical and Morphological Properties of Aluminium Induced Texture Glass Superstrates DOI: 10.1143/JJAP.51.10NB08(Journal) (6715399-N) DOI: 10.7567/JJAP.51.10NB08(Journal) ========================================================== Created: 2023-02-01 12:02:37 ConfID: 6715396 CauseID: 1560033003 OtherID: 1363321537 JT: Japanese Journal of Applied Physics MD: Park,51,9s2,901,2012,An Experimental Study of the Effects of Source/Drain to Gate Overlap in Pentacene Thin-Film Transistors DOI: 10.1143/JJAP.51.09MJ01(Journal) (6715396-N) DOI: 10.7567/JJAP.51.09MJ01(Journal) ========================================================== Created: 2023-02-01 12:02:41 ConfID: 6715397 CauseID: 1560033017 OtherID: 1363321550 JT: Japanese Journal of Applied Physics MD: Park,51,9s2,903,2012,Effects of Current Density and Frequency on Microstructure and Mechanical Properties of Ni Stencil Masks Fabricated by Pulse Electroforming DOI: 10.1143/JJAP.51.09MJ03(Journal) (6715397-N) DOI: 10.7567/JJAP.51.09MJ03(Journal) ========================================================== Created: 2023-02-01 12:02:39 ConfID: 6715394 CauseID: 1560032998 OtherID: 1363324687 JT: Japanese Journal of Applied Physics MD: Rüdiger,51,10s,1007,2012,Numerical Analysis of Locally Contacted Rear Surface Passivated Silicon Solar Cells DOI: 10.1143/JJAP.51.10NA07(Journal) (6715394-N) DOI: 10.7567/JJAP.51.10NA07(Journal) ========================================================== Created: 2023-02-01 12:02:36 ConfID: 6715395 CauseID: 1560033000 OtherID: 1363321524 JT: Japanese Journal of Applied Physics MD: Jeong,51,9s2,909,2012,Electrical Characteristic Analysis of Postannealed ZnO Thin-Film Transistors under O2 Ambient DOI: 10.1143/JJAP.51.09MF09(Journal) (6715395-N) DOI: 10.7567/JJAP.51.09MF09(Journal) ========================================================== Created: 2023-02-01 12:02:32 ConfID: 6715392 CauseID: 1560032990 OtherID: 1363321553 JT: Japanese Journal of Applied Physics MD: Lee,51,9s2,902,2012,Determination of the Thermoelectric Properties in Filled-Skutterudite Systems by Controlling the Process Variables DOI: 10.1143/JJAP.51.09ML02(Journal) (6715392-N) DOI: 10.7567/JJAP.51.09ML02(Journal) ========================================================== Created: 2023-02-01 12:02:35 ConfID: 6715393 CauseID: 1560032995 OtherID: 1363321511 JT: Japanese Journal of Applied Physics MD: Kim,51,9s2,901,2012,Interaction Effect of Protons on Their Migration in Bulk Undoped Barium Zirconate Using Density Functional Theory DOI: 10.1143/JJAP.51.09MA01(Journal) (6715393-N) DOI: 10.7567/JJAP.51.09MA01(Journal) ========================================================== Created: 2023-02-01 12:02:50 ConfID: 6715406 CauseID: 1560033047 OtherID: 1363321534 JT: Japanese Journal of Applied Physics MD: Park,51,9s2,914,2012,Effects of Surface and Plate-Gap Discharges on Panel-Aging Characteristics in Alternating-Current Plasma Display Panel DOI: 10.1143/JJAP.51.09MF14(Journal) (6715406-N) DOI: 10.7567/JJAP.51.09MF14(Journal) ========================================================== Created: 2023-02-01 12:02:50 ConfID: 6715407 CauseID: 1560033048 OtherID: 1363324723 JT: Japanese Journal of Applied Physics MD: Hirai,51,10s,1003,2012,Improvement of the Band Profile of Cu(In,Ga)Se2 Solar Cells with High-Ga Content Prepared Using a Five-Stage Method DOI: 10.1143/JJAP.51.10NC03(Journal) (6715407-N) DOI: 10.7567/JJAP.51.10NC03(Journal) ========================================================== Created: 2023-02-01 12:02:53 ConfID: 6715404 CauseID: 1560033043 OtherID: 1363321539 JT: Japanese Journal of Applied Physics MD: Ryu,51,9s2,903,2012,Effect of Internal Polarization Fields in InGaN/GaN Multiple-Quantum Wells on the Efficiency of Blue Light-Emitting Diodes DOI: 10.1143/JJAP.51.09MK03(Journal) (6715404-N) DOI: 10.7567/JJAP.51.09MK03(Journal) ========================================================== Created: 2023-02-01 12:02:53 ConfID: 6715405 CauseID: 1560033044 OtherID: 1363324711 JT: Japanese Journal of Applied Physics MD: Hara,51,10s,1006,2012,Realization of Large-Domain Barium Disilicide Epitaxial Thin Film by Introduction of Miscut to Si(111) Substrate DOI: 10.1143/JJAP.51.10NB06(Journal) (6715405-N) DOI: 10.7567/JJAP.51.10NB06(Journal) ========================================================== Created: 2023-02-01 12:02:47 ConfID: 6715402 CauseID: 1560033032 OtherID: 1363324717 JT: Japanese Journal of Applied Physics MD: Jung,51,10s,1010,2012,Computational Fluid Dynamics Modeling of Mono-Silane Siemens Reactor DOI: 10.1143/JJAP.51.10NA10(Journal) (6715402-N) DOI: 10.7567/JJAP.51.10NA10(Journal) ========================================================== Created: 2023-02-01 12:02:49 ConfID: 6715403 CauseID: 1560033035 OtherID: 1363321512 JT: Japanese Journal of Applied Physics MD: Cho,51,9s2,909,2012,Non-Stoichiometric Effect in (K,Na)NbO3-Based Perovskite Ceramics DOI: 10.1143/JJAP.51.09MD09(Journal) (6715403-N) DOI: 10.7567/JJAP.51.09MD09(Journal) ========================================================== Created: 2023-02-01 12:02:46 ConfID: 6715400 CauseID: 1560033029 OtherID: 1363324699 JT: Japanese Journal of Applied Physics MD: Peters,51,10s,1006,2012,Advanced Modelling of Silicon Wafer Solar Cells DOI: 10.1143/JJAP.51.10NA06(Journal) (6715400-N) DOI: 10.7567/JJAP.51.10NA06(Journal) ========================================================== Created: 2023-02-01 12:02:45 ConfID: 6715401 CauseID: 1560033030 OtherID: 1363321498 JT: Japanese Journal of Applied Physics MD: Raghavan,51,9s2,906,2012,Structural and Multiferroic Properties of Chemical-Solution-Deposited (Bi0.95La0.05)(Fe0.97Cr0.03)O3/NiFe2O4 Double-Layered Thin Film DOI: 10.1143/JJAP.51.09MD06(Journal) (6715401-N) DOI: 10.7567/JJAP.51.09MD06(Journal) ========================================================== Created: 2023-02-01 12:02:57 ConfID: 6715414 CauseID: 1560033069 OtherID: 1363321547 JT: Japanese Journal of Applied Physics MD: Lee,51,9s2,901,2012,Modeling of Electromagnetic Wave Propagation with Tapered Transmission Line DOI: 10.1143/JJAP.51.09MG01(Journal) (6715414-N) DOI: 10.7567/JJAP.51.09MG01(Journal) ========================================================== Created: 2023-02-01 12:03:00 ConfID: 6715415 CauseID: 1560033076 OtherID: 1363324694 JT: Japanese Journal of Applied Physics MD: Hernández,51,10s,1004,2012,High Efficiency Silver-Free Heterojunction Silicon Solar Cell DOI: 10.1143/JJAP.51.10NA04(Journal) (6715415-N) DOI: 10.7567/JJAP.51.10NA04(Journal) ========================================================== Created: 2023-02-01 12:02:55 ConfID: 6715412 CauseID: 1560033065 OtherID: 1363324748 JT: Japanese Journal of Applied Physics MD: Maejima,51,10s,1016,2012,Correlation between Electrical Properties and Crystal c-Axis Orientation of Zinc Oxide Transparent Conducting Films DOI: 10.1143/JJAP.51.10NC16(Journal) (6715412-N) DOI: 10.7567/JJAP.51.10NC16(Journal) ========================================================== Created: 2023-02-01 12:02:56 ConfID: 6715413 CauseID: 1560033067 OtherID: 1363324727 JT: Japanese Journal of Applied Physics MD: Hongsingthong,51,10s,1009,2012,Development of Novel Al-Doped Zinc Oxide Films Fabricated on Etched Glass and Their Application to Solar Cells DOI: 10.1143/JJAP.51.10NB09(Journal) (6715413-N) DOI: 10.7567/JJAP.51.10NB09(Journal) ========================================================== Created: 2023-02-01 12:02:52 ConfID: 6715410 CauseID: 1560033052 OtherID: 1363321530 JT: Japanese Journal of Applied Physics MD: Paosawatyanyong,51,9s2,905,2012,Effects of Photoirradiation on Electrical Characteristics of Chemical Vapor Deposited Diamond Schottkey Barrier Diode DOI: 10.1143/JJAP.51.09MF05(Journal) (6715410-N) DOI: 10.7567/JJAP.51.09MF05(Journal) ========================================================== Created: 2023-02-01 12:02:59 ConfID: 6715411 CauseID: 1560033064 OtherID: 1363321545 JT: Japanese Journal of Applied Physics MD: Kwon,51,9s2,903,2012,Solution-Processed White Light-Emitting Diode Utilizing Hybrid Polymer and Red–Green–Blue Quantum Dots DOI: 10.1143/JJAP.51.09MH03(Journal) (6715411-N) DOI: 10.7567/JJAP.51.09MH03(Journal) ========================================================== Created: 2023-02-01 12:02:51 ConfID: 6715408 CauseID: 1560033049 OtherID: 1363321548 JT: Japanese Journal of Applied Physics MD: Sun,51,9s2,915,2012,Research on Electrical Characteristics of Dielectric Barrier Discharge and Dielectric Barrier Corona Discharge DOI: 10.1143/JJAP.51.09MF15(Journal) (6715408-N) DOI: 10.7567/JJAP.51.09MF15(Journal) ========================================================== Created: 2023-02-01 12:02:52 ConfID: 6715409 CauseID: 1560033051 OtherID: 1363321533 JT: Japanese Journal of Applied Physics MD: Lee,51,9s2,902,2012,Color Stability of Blue Phosphorescent Organic Light-Emitting Diodes with Undoped Layer in Emissive Layer DOI: 10.1143/JJAP.51.09MH02(Journal) (6715409-N) DOI: 10.7567/JJAP.51.09MH02(Journal) ========================================================== Created: 2023-02-01 12:03:07 ConfID: 6715422 CauseID: 1560033101 OtherID: 1363321554 JT: Japanese Journal of Applied Physics MD: Kim,51,9s2,906,2012,Effects of Cadmium Content on Optical Parameters of CdxZn1-xO Thin Films Prepared by Sol–Gel Method DOI: 10.1143/JJAP.51.09MK06(Journal) (6715422-N) DOI: 10.7567/JJAP.51.09MK06(Journal) ========================================================== Created: 2023-02-01 12:03:14 ConfID: 6715423 CauseID: 1560033115 OtherID: 1363324745 JT: Japanese Journal of Applied Physics MD: Gao,51,10s,1028,2012,Structural Study of Cu-Deficient Cu2(1-x)ZnSnSe4 Solar Cell Materials by X-ray Diffraction and X-ray Absorption Fine Structure DOI: 10.1143/JJAP.51.10NC28(Journal) (6715423-N) DOI: 10.7567/JJAP.51.10NC28(Journal) ========================================================== Created: 2023-02-01 12:03:08 ConfID: 6715420 CauseID: 1560033096 OtherID: 1363324731 JT: Japanese Journal of Applied Physics MD: Kuramochi,51,10s,1013,2012,Development of Novel Aluminum-Doped Zinc Oxide Film and Its Application to Solar Cells DOI: 10.1143/JJAP.51.10NB13(Journal) (6715420-N) DOI: 10.7567/JJAP.51.10NB13(Journal) ========================================================== Created: 2023-02-01 12:03:06 ConfID: 6715421 CauseID: 1560033100 OtherID: 1363321529 JT: Japanese Journal of Applied Physics MD: Lee,51,9s2,907,2012,Schottky Diodes Prepared with Ag, Au, or Pd Contacts on a MgZnO/ZnO Heterostructure DOI: 10.1143/JJAP.51.09MF07(Journal) (6715421-N) DOI: 10.7567/JJAP.51.09MF07(Journal) ========================================================== Created: 2023-02-01 12:03:03 ConfID: 6715418 CauseID: 1560033085 OtherID: 1363321535 JT: Japanese Journal of Applied Physics MD: Park,51,9s2,904,2012,Optical Improvement of GaN-Based Light Emitting Diodes by Interfacial Si Treatment in InGaN/GaN Quantum Well Structure DOI: 10.1143/JJAP.51.09MK04(Journal) (6715418-N) DOI: 10.7567/JJAP.51.09MK04(Journal) ========================================================== Created: 2023-02-01 12:03:05 ConfID: 6715419 CauseID: 1560033093 OtherID: 1363324706 JT: Japanese Journal of Applied Physics MD: Lee,51,10s,1016,2012,Effect of the Low-Temperature Annealing on Zn-Doped Indium–Tin-Oxide Films for Silicon Heterojunction Solar Cells DOI: 10.1143/JJAP.51.10NA16(Journal) (6715419-N) DOI: 10.7567/JJAP.51.10NA16(Journal) ========================================================== Created: 2023-02-01 12:03:03 ConfID: 6715416 CauseID: 1560033077 OtherID: 1363324751 JT: Japanese Journal of Applied Physics MD: Lee,51,10s,1018,2012,Structure and Composition Analysis of Cu(In,Al)Se2 Thin Films Prepared by Rapid Thermal Selenization DOI: 10.1143/JJAP.51.10NC18(Journal) (6715416-N) DOI: 10.7567/JJAP.51.10NC18(Journal) ========================================================== Created: 2023-02-01 12:03:02 ConfID: 6715417 CauseID: 1560033084 OtherID: 1363324729 JT: Japanese Journal of Applied Physics MD: Kim,51,10s,1011,2012,Microcrystalline Silicon Carbide p-Layer with Wide-Bandgap and Its Application to Single- and Triple-Junction Silicon Thin-Film Solar Cells DOI: 10.1143/JJAP.51.10NB11(Journal) (6715417-N) DOI: 10.7567/JJAP.51.10NB11(Journal) ========================================================== Created: 2023-02-01 12:27:58 ConfID: 6715630 CauseID: 1560037023 OtherID: 1363320327 JT: Japanese Journal of Applied Physics MD: Goto,51,2r,26504,2012,Study of the Removal of Ion-Implanted Resists Using Wet Ozone DOI: 10.1143/JJAP.51.026504(Journal) (6715630-N) DOI: 10.7567/JJAP.51.026504(Journal) ========================================================== Created: 2023-02-01 12:29:33 ConfID: 6715631 CauseID: 1560037384 OtherID: 1363320252 JT: Japanese Journal of Applied Physics MD: Fujitsuka,51,2r,21103,2012,Engineering of Si-Rich Nitride Charge-Trapping Layer for Highly Reliable Metal–Oxide–Nitride–Oxide–Semiconductor Type NAND Flash Memory with Multi-Level Cell Operation DOI: 10.1143/JJAP.51.021103(Journal) (6715631-N) DOI: 10.7567/JJAP.51.021103(Journal) ========================================================== Created: 2023-02-01 12:30:05 ConfID: 6715638 CauseID: 1560037525 OtherID: 1363320285 JT: Japanese Journal of Applied Physics MD: Novita,51,2r,22604,2012,Comparative Study of Multiplet Structures of Mn4+ in K2SiF6, K2GeF6, and K2TiF6 Based on First-Principles Configuration–Interaction Calculations DOI: 10.1143/JJAP.51.022604(Journal) (6715638-N) DOI: 10.7567/JJAP.51.022604(Journal) ========================================================== Created: 2023-02-01 12:30:10 ConfID: 6715639 CauseID: 1560037547 OtherID: 1363320264 JT: Japanese Journal of Applied Physics MD: Sometani,51,2r,21101,2012,Variation of Chemical Vapor Deposited SiO2 Density Due to Generation and Shrinkage of Open Space During Thermal Annealing DOI: 10.1143/JJAP.51.021101(Journal) (6715639-N) DOI: 10.7567/JJAP.51.021101(Journal) ========================================================== Created: 2023-02-01 12:29:52 ConfID: 6715636 CauseID: 1560037467 OtherID: 1363320340 JT: Japanese Journal of Applied Physics MD: Shiraishi,51,2r,26602,2012,High-Speed Atomic Force Microscope by Surface Topography Observer DOI: 10.1143/JJAP.51.026602(Journal) (6715636-N) DOI: 10.7567/JJAP.51.026602(Journal) ========================================================== Created: 2023-02-01 12:30:02 ConfID: 6715637 CauseID: 1560037511 OtherID: 1363320287 JT: Japanese Journal of Applied Physics MD: Park,51,2r,22602,2012,Efficiency and Thermal Stability Enhancements of Sr2SiO4:Eu2+ Phosphor via Bi3+ Codoping for Solid-State White Lighting DOI: 10.1143/JJAP.51.022602(Journal) (6715637-N) DOI: 10.7567/JJAP.51.022602(Journal) ========================================================== Created: 2023-02-01 12:29:46 ConfID: 6715634 CauseID: 1560037445 OtherID: 1363320266 JT: Japanese Journal of Applied Physics MD: Uemukai,51,2r,20205,2012,Integrated AlGaAs Quantum-Well Ridge-Structure Two-Wavelength Distributed Bragg Reflector Laser for Terahertz Wave Generation DOI: 10.1143/JJAP.51.020205(Journal) (6715634-N) DOI: 10.7567/JJAP.51.020205(Journal) ========================================================== Created: 2023-02-01 12:29:49 ConfID: 6715635 CauseID: 1560037452 OtherID: 1363320257 JT: Japanese Journal of Applied Physics MD: Kaneko,51,2r,20201,2012,Evaluation of Misfit Relaxation in α-Ga2O3 Epitaxial Growth on α-Al2O3 Substrate DOI: 10.1143/JJAP.51.020201(Journal) (6715635-N) DOI: 10.7567/JJAP.51.020201(Journal) ========================================================== Created: 2023-02-01 12:29:43 ConfID: 6715632 CauseID: 1560037431 OtherID: 1363320307 JT: Japanese Journal of Applied Physics MD: Kashi,51,2r,25003,2012,Effect of AC Electrodeposition Conditions on Microstructure and Magnetic Properties of CoxNi1-x Nanowire Arrays Embedded in Anodic Aluminum Oxide Template DOI: 10.1143/JJAP.51.025003(Journal) (6715632-N) DOI: 10.7567/JJAP.51.025003(Journal) ========================================================== Created: 2023-02-01 12:29:45 ConfID: 6715633 CauseID: 1560037444 OtherID: 1363320298 JT: Japanese Journal of Applied Physics MD: Kumar,51,2r,24106,2012,Gate Length and Gate Width Dependence of Drain Induced Barrier Lowering and Current-Onset Voltage Variability in Bulk and Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistors DOI: 10.1143/JJAP.51.024106(Journal) (6715633-N) DOI: 10.7567/JJAP.51.024106(Journal) ========================================================== Created: 2023-02-01 12:30:34 ConfID: 6715646 CauseID: 1560037639 OtherID: 1363320276 JT: Japanese Journal of Applied Physics MD: Lee,51,2r,21502,2012,Fabrication of Freestanding Pb(Zr,Ti)O Film Microstructures Using Ge Sacrificial Layer DOI: 10.1143/JJAP.51.021502(Journal) (6715646-N) DOI: 10.7567/JJAP.51.021502(Journal) ========================================================== Created: 2023-02-01 12:30:35 ConfID: 6715647 CauseID: 1560037649 OtherID: 1363320316 JT: Japanese Journal of Applied Physics MD: Miyashita,51,2r,25002,2012,Preparation and Luminescence Properties of Organic Phosphorescent Nanoparticles DOI: 10.1143/JJAP.51.025002(Journal) (6715647-N) DOI: 10.7567/JJAP.51.025002(Journal) ========================================================== Created: 2023-02-01 12:30:26 ConfID: 6715644 CauseID: 1560037610 OtherID: 1363320333 JT: Japanese Journal of Applied Physics MD: Lee,51,2r,26503,2012,Fabrication of Large-Area CoNi Mold for Nanoimprint Lithography DOI: 10.1143/JJAP.51.026503(Journal) (6715644-N) DOI: 10.7567/JJAP.51.026503(Journal) ========================================================== Created: 2023-02-01 12:30:30 ConfID: 6715645 CauseID: 1560037626 OtherID: 1363320308 JT: Japanese Journal of Applied Physics MD: Kotaka,51,2r,25201,2012,Edge States of Bi Nanoribbons on Bi Substrates: First-Principles Density Functional Study DOI: 10.1143/JJAP.51.025201(Journal) (6715645-N) DOI: 10.7567/JJAP.51.025201(Journal) ========================================================== Created: 2023-02-01 12:30:21 ConfID: 6715642 CauseID: 1560037589 OtherID: 1363320274 JT: Japanese Journal of Applied Physics MD: Piao,51,2r,22501,2012,Resolution-Enhanced Magnification of a Far Three-Dimensional Object Image by Using the Moving-Direct-Pixel-Mapping Method in Scalable Integral-Imaging System DOI: 10.1143/JJAP.51.022501(Journal) (6715642-N) DOI: 10.7567/JJAP.51.022501(Journal) ========================================================== Created: 2023-02-01 12:30:22 ConfID: 6715643 CauseID: 1560037591 OtherID: 1363320311 JT: Japanese Journal of Applied Physics MD: Yasuda,51,2r,25001,2012,Low-Temperature Bonding of Silver to Aluminum DOI: 10.1143/JJAP.51.025001(Journal) (6715643-N) DOI: 10.7567/JJAP.51.025001(Journal) ========================================================== Created: 2023-02-01 12:30:19 ConfID: 6715640 CauseID: 1560037568 OtherID: 1363320309 JT: Japanese Journal of Applied Physics MD: Ohmagari,51,2r,25503,2012,Enhanced Growth of Diamond Grains in Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films by Pulsed Laser Deposition with Boron-Blended Graphite Targets DOI: 10.1143/JJAP.51.025503(Journal) (6715640-N) DOI: 10.7567/JJAP.51.025503(Journal) ========================================================== Created: 2023-02-01 12:30:17 ConfID: 6715641 CauseID: 1560037575 OtherID: 1363320299 JT: Japanese Journal of Applied Physics MD: Shim,51,2r,24303,2012,Device Simulation of Ditch and Elevated Electrode Structures in Organic Thin-Film Transistors DOI: 10.1143/JJAP.51.024303(Journal) (6715641-N) DOI: 10.7567/JJAP.51.024303(Journal) ========================================================== Created: 2023-02-01 12:07:12 ConfID: 6715590 CauseID: 1560033811 OtherID: 1363324884 JT: Japanese Journal of Applied Physics MD: Richard,51,11s,1115,2012,Cobalt-Doped Antimony/Tin Oxide Sol–Gels on Carbon–Silicon Layers for Modeling Sol–Gel-Carbon Fiber Interfaces DOI: 10.1143/JJAP.51.11PG15(Journal) (6715590-N) DOI: 10.7567/JJAP.51.11PG15(Journal) ========================================================== Created: 2023-02-01 12:07:12 ConfID: 6715591 CauseID: 1560033812 OtherID: 1363324868 JT: Japanese Journal of Applied Physics MD: Shueh,51,11s,1102,2012,Correlating Uncompensated Antiferromagnetic Moments and Exchange Coupling Interactions in Interface Ion-Beam Bombarded Co90Fe10/CoFe-Oxide Bilayers DOI: 10.1143/JJAP.51.11PG02(Journal) (6715591-N) DOI: 10.7567/JJAP.51.11PG02(Journal) ========================================================== Created: 2023-02-01 12:07:07 ConfID: 6715588 CauseID: 1560033800 OtherID: 1363324826 JT: Japanese Journal of Applied Physics MD: Sakamoto,51,10s,1003,2012,Epidemiological Analysis of Degradation in Silicon Photovoltaic Modules DOI: 10.1143/JJAP.51.10NF03(Journal) (6715588-N) DOI: 10.7567/JJAP.51.10NF03(Journal) ========================================================== Created: 2023-02-01 12:07:13 ConfID: 6715589 CauseID: 1560033805 OtherID: 1363324852 JT: Japanese Journal of Applied Physics MD: Yamao,51,11s,1103,2012,Refractive Index Measurements of Well-Defined Polygon Crystals of Thiophene/Phenylene Co-Oligomers DOI: 10.1143/JJAP.51.11PD03(Journal) (6715589-N) DOI: 10.7567/JJAP.51.11PD03(Journal) ========================================================== Created: 2023-02-01 12:07:01 ConfID: 6715586 CauseID: 1560033789 OtherID: 1363324846 JT: Japanese Journal of Applied Physics MD: Kang,51,11s,1106,2012,Solution-Processed C60 Single-Crystal Field-Effect Transistors DOI: 10.1143/JJAP.51.11PD06(Journal) (6715586-N) DOI: 10.7567/JJAP.51.11PD06(Journal) ========================================================== Created: 2023-02-01 12:07:06 ConfID: 6715587 CauseID: 1560033799 OtherID: 1363324870 JT: Japanese Journal of Applied Physics MD: Ishii,51,11s,1110,2012,Investigation of Gas Sensing Characteristics of TiO2 Nanotube Field-Effect Transistor DOI: 10.1143/JJAP.51.11PE10(Journal) (6715587-N) DOI: 10.7567/JJAP.51.11PE10(Journal) ========================================================== Created: 2023-02-01 12:06:57 ConfID: 6715584 CauseID: 1560033780 OtherID: 1363324840 JT: Japanese Journal of Applied Physics MD: Usami,51,10s,1006,2012,Modeling of Solar Spectral Irradiance Data from Cloudless to Overcast Skies DOI: 10.1143/JJAP.51.10NF06(Journal) (6715584-N) DOI: 10.7567/JJAP.51.10NF06(Journal) ========================================================== Created: 2023-02-01 12:06:59 ConfID: 6715585 CauseID: 1560033784 OtherID: 1363324853 JT: Japanese Journal of Applied Physics MD: Hara,51,11s,1101,2012,Selective-Area Growth and Electrical Characterization of Hybrid Structures between Semiconducting GaAs Nanowires and Ferromagnetic MnAs Nanoclusters DOI: 10.1143/JJAP.51.11PE01(Journal) (6715585-N) DOI: 10.7567/JJAP.51.11PE01(Journal) ========================================================== Created: 2023-02-01 12:07:46 ConfID: 6715598 CauseID: 1560033880 OtherID: 1363324851 JT: Japanese Journal of Applied Physics MD: Araki,51,11s,1101,2012,Effect of Void Volume and Silver Loading on Strain Response of Electrical Resistance in Silver Flakes/Polyurethane Composite for Stretchable Conductors DOI: 10.1143/JJAP.51.11PD01(Journal) (6715598-N) DOI: 10.7567/JJAP.51.11PD01(Journal) ========================================================== Created: 2023-02-01 12:07:48 ConfID: 6715599 CauseID: 1560033884 OtherID: 1363324854 JT: Japanese Journal of Applied Physics MD: Lohn,51,11s,1104,2012,Morphological Effect of Doping Environment on Silicon Nanowires Grown by Plasma-Assisted Chemical Vapor Deposition DOI: 10.1143/JJAP.51.11PE04(Journal) (6715599-N) DOI: 10.7567/JJAP.51.11PE04(Journal) ========================================================== Created: 2023-02-01 12:07:27 ConfID: 6715596 CauseID: 1560033845 OtherID: 1363324857 JT: Japanese Journal of Applied Physics MD: Akai,51,11s,1104,2012,Vibration Analysis and Transmission Characteristics of Piezoelectric Micromachined Ultrasonic Transducers Using Epitaxial Pb(Zr,Ti)O3 Thin Films on γ-Al2O3/Si Substrate DOI: 10.1143/JJAP.51.11PA04(Journal) (6715596-N) DOI: 10.7567/JJAP.51.11PA04(Journal) ========================================================== Created: 2023-02-01 12:07:29 ConfID: 6715597 CauseID: 1560033849 OtherID: 1363324844 JT: Japanese Journal of Applied Physics MD: Shinozuka,51,11s,1103,2012,Phonon-Kick Mechanism for Defect Reactions in Semiconductors DOI: 10.1143/JJAP.51.11PC03(Journal) (6715597-N) DOI: 10.7567/JJAP.51.11PC03(Journal) ========================================================== Created: 2023-02-01 12:07:21 ConfID: 6715594 CauseID: 1560033831 OtherID: 1363324847 JT: Japanese Journal of Applied Physics MD: Iino,51,11s,1102,2012,High Uniformity and High Thermal Stability of Solution-Processed Polycrystalline Thin Films by Utilizing Highly Ordered Smectic Liquid Crystals DOI: 10.1143/JJAP.51.11PD02(Journal) (6715594-N) DOI: 10.7567/JJAP.51.11PD02(Journal) ========================================================== Created: 2023-02-01 12:07:21 ConfID: 6715595 CauseID: 1560033832 OtherID: 1363324885 JT: Japanese Journal of Applied Physics MD: Kalabukhov,51,11s,1110,2012,Inhomogeneous Microstructure and Electrical Transport Properties at the LaAlO3/SrTiO3 Interface DOI: 10.1143/JJAP.51.11PG10(Journal) (6715595-N) DOI: 10.7567/JJAP.51.11PG10(Journal) ========================================================== Created: 2023-02-01 12:07:19 ConfID: 6715592 CauseID: 1560033823 OtherID: 1363324862 JT: Japanese Journal of Applied Physics MD: Deng,51,11s,1105,2012,Microstructure, Growth Mechanism, Magnetoelectricity, and Raman Scattering of Featherlike CoFe2O4–BaTiO3 Nanostructures DOI: 10.1143/JJAP.51.11PG05(Journal) (6715592-N) DOI: 10.7567/JJAP.51.11PG05(Journal) ========================================================== Created: 2023-02-01 12:07:19 ConfID: 6715593 CauseID: 1560033824 OtherID: 1363324890 JT: Japanese Journal of Applied Physics MD: Endo,51,11s,1109,2012,Growth Aspects of Thin-Film Composite Heterostructures of Oxide Multicomponent Perovskites for Electronics DOI: 10.1143/JJAP.51.11PG09(Journal) (6715593-N) DOI: 10.7567/JJAP.51.11PG09(Journal) ========================================================== Created: 2023-02-01 12:08:01 ConfID: 6715600 CauseID: 1560033921 OtherID: 1363324865 JT: Japanese Journal of Applied Physics MD: Ogawa,51,11s,1102,2012,Vacuum Annealing Formation of Graphene on Diamond C(111) Surfaces Studied by Real-Time Photoelectron Spectroscopy DOI: 10.1143/JJAP.51.11PF02(Journal) (6715600-N) DOI: 10.7567/JJAP.51.11PF02(Journal) ========================================================== Created: 2023-02-01 12:08:18 ConfID: 6715601 CauseID: 1560033960 OtherID: 1363324888 JT: Japanese Journal of Applied Physics MD: Kaneko,51,11s,1103,2012,Creation of Nanoparticle–Nanotube Conjugates for Life-Science Application Using Gas–Liquid Interfacial Plasmas DOI: 10.1143/JJAP.51.11PJ03(Journal) (6715601-N) DOI: 10.7567/JJAP.51.11PJ03(Journal) ========================================================== Created: 2023-02-01 12:05:58 ConfID: 6715558 CauseID: 1560033637 OtherID: 1363324811 JT: Japanese Journal of Applied Physics MD: Uemura,51,10s,1014,2012,Carbazole Dyes with Ether Groups for Dye-Sensitized Solar Cells: Effect of Negative Charges in Dye Molecules on Electron Lifetime DOI: 10.1143/JJAP.51.10NE14(Journal) (6715558-N) DOI: 10.7567/JJAP.51.10NE14(Journal) ========================================================== Created: 2023-02-01 12:06:00 ConfID: 6715559 CauseID: 1560033649 OtherID: 1363324793 JT: Japanese Journal of Applied Physics MD: Kurokawa,51,10s,1009,2012,Numerical Approach to the Performance of Silicon Quantum Dots Superlattice Solar Cells Taking into Account the Quantum Effect DOI: 10.1143/JJAP.51.10NE09(Journal) (6715559-N) DOI: 10.7567/JJAP.51.10NE09(Journal) ========================================================== Created: 2023-02-01 12:05:52 ConfID: 6715556 CauseID: 1560033626 OtherID: 1363324891 JT: Japanese Journal of Applied Physics MD: Yokura,51,11s,1114,2012,Long Lifetime of Plasma Effect on Bonding of Poly(ethylene terephthalate) Films and Surface Analyses DOI: 10.1143/JJAP.51.11PG14(Journal) (6715556-N) DOI: 10.7567/JJAP.51.11PG14(Journal) ========================================================== Created: 2023-02-01 12:05:57 ConfID: 6715557 CauseID: 1560033636 OtherID: 1363324866 JT: Japanese Journal of Applied Physics MD: Prestgard,51,11s,1108,2012,Evidence of Kinetically Stable Glassy Phase Formation in Ultrathin NdNiO3 Films DOI: 10.1143/JJAP.51.11PG08(Journal) (6715557-N) DOI: 10.7567/JJAP.51.11PG08(Journal) ========================================================== Created: 2023-02-01 12:05:54 ConfID: 6715554 CauseID: 1560033621 OtherID: 1363324781 JT: Japanese Journal of Applied Physics MD: Marumoto,51,10s,1008,2012,Evaluation of Microscopic Properties of Organic Solar Cells by Light-Induced Electron Spin Resonance DOI: 10.1143/JJAP.51.10NE08(Journal) (6715554-N) DOI: 10.7567/JJAP.51.10NE08(Journal) ========================================================== Created: 2023-02-01 12:05:54 ConfID: 6715555 CauseID: 1560033622 OtherID: 1363324871 JT: Japanese Journal of Applied Physics MD: Cortie,51,11s,1101,2012,Probing Exchange Bias Effects in CoO/Co Bilayers with Pillar-Like CoO Structures DOI: 10.1143/JJAP.51.11PG01(Journal) (6715555-N) DOI: 10.7567/JJAP.51.11PG01(Journal) ========================================================== Created: 2023-02-01 12:05:49 ConfID: 6715552 CauseID: 1560033608 OtherID: 1363324797 JT: Japanese Journal of Applied Physics MD: Pandey,51,10s,1012,2012,Dye Sensitized Solar Cells Based on Novel Far Red Sensitizing Unsymmetrical Squaraine Dye Containing Pyrroloquinoline Moiety DOI: 10.1143/JJAP.51.10NE12(Journal) (6715552-N) DOI: 10.7567/JJAP.51.10NE12(Journal) ========================================================== Created: 2023-02-01 12:05:47 ConfID: 6715553 CauseID: 1560033611 OtherID: 1363324756 JT: Japanese Journal of Applied Physics MD: Tanaka,51,10s,1026,2012,Face-to-Face Annealing Process of Cu2ZnSnS4 Thin Films Deposited by Spray Pyrolysis Method DOI: 10.1143/JJAP.51.10NC26(Journal) (6715553-N) DOI: 10.7567/JJAP.51.10NC26(Journal) ========================================================== Created: 2023-02-01 12:06:10 ConfID: 6715566 CauseID: 1560033682 OtherID: 1363324786 JT: Japanese Journal of Applied Physics MD: Onozawa-Komatsuzaki,51,10s,1011,2012,Synthesis and Electrochemical Properties of 2,6-Bis(quinoline-2-yl)pyridyl Ruthenium Complexes as Near-Infrared Sensitizers for Dye-Sensitized Solar Cells DOI: 10.1143/JJAP.51.10NE11(Journal) (6715566-N) DOI: 10.7567/JJAP.51.10NE11(Journal) ========================================================== Created: 2023-02-01 12:06:19 ConfID: 6715567 CauseID: 1560033691 OtherID: 1363324836 JT: Japanese Journal of Applied Physics MD: Abe,51,10s,1034,2012,A Density Functional Theory Study of Interaction of Fluorinated Ethylene Carbonate with a Graphene Surface DOI: 10.1143/JJAP.51.10NE34(Journal) (6715567-N) DOI: 10.7567/JJAP.51.10NE34(Journal) ========================================================== Created: 2023-02-01 12:06:07 ConfID: 6715564 CauseID: 1560033672 OtherID: 1363324790 JT: Japanese Journal of Applied Physics MD: Huang,51,10s,1010,2012,Doping of Silicon Quantum Dots Embedded in Nitride Matrix for All-Silicon Tandem Cells DOI: 10.1143/JJAP.51.10NE10(Journal) (6715564-N) DOI: 10.7567/JJAP.51.10NE10(Journal) ========================================================== Created: 2023-02-01 12:06:13 ConfID: 6715565 CauseID: 1560033677 OtherID: 1363324771 JT: Japanese Journal of Applied Physics MD: König,51,10s,1002,2012,Lattice-Matched Hot Carrier Solar Cell with Energy Selectivity Integrated into Hot Carrier Absorber DOI: 10.1143/JJAP.51.10ND02(Journal) (6715565-N) DOI: 10.7567/JJAP.51.10ND02(Journal) ========================================================== Created: 2023-02-01 12:06:05 ConfID: 6715562 CauseID: 1560033670 OtherID: 1363324765 JT: Japanese Journal of Applied Physics MD: Chino,51,10s,1035,2012,Preparation of Cu2SnS3 Thin Films by Sulfurization of Cu/Sn Stacked Precursors DOI: 10.1143/JJAP.51.10NC35(Journal) (6715562-N) DOI: 10.7567/JJAP.51.10NC35(Journal) ========================================================== Created: 2023-02-01 12:06:06 ConfID: 6715563 CauseID: 1560033671 OtherID: 1363324829 JT: Japanese Journal of Applied Physics MD: Kato,51,10s,1008,2012,Maximum Output Power Control Using Short-Circuit Current and Open-Circuit Voltage of a Solar Panel DOI: 10.1143/JJAP.51.10NF08(Journal) (6715563-N) DOI: 10.7567/JJAP.51.10NF08(Journal) ========================================================== Created: 2023-02-01 12:06:03 ConfID: 6715560 CauseID: 1560033655 OtherID: 1363324770 JT: Japanese Journal of Applied Physics MD: Fujii,51,10s,1004,2012,Effect of Quantum Well on the Efficiency of Carrier Collection in InGaAs/GaAsP Multiple Quantum Well Solar Cells DOI: 10.1143/JJAP.51.10ND04(Journal) (6715560-N) DOI: 10.7567/JJAP.51.10ND04(Journal) ========================================================== Created: 2023-02-01 12:06:09 ConfID: 6715561 CauseID: 1560033665 OtherID: 1363324805 JT: Japanese Journal of Applied Physics MD: Truong,51,10s,1027,2012,Enhancement of CdSe/Poly(3-hexylthiophene) Bulk Heterojunction Solar Cell Efficiency by Surface Ligand Exchange and Thermal Treatment DOI: 10.1143/JJAP.51.10NE27(Journal) (6715561-N) DOI: 10.7567/JJAP.51.10NE27(Journal) ========================================================== Created: 2023-02-01 12:06:28 ConfID: 6715574 CauseID: 1560033716 OtherID: 1363324787 JT: Japanese Journal of Applied Physics MD: Sodabanlu,51,10s,1015,2012,Effects of Background Zn Doping on the Performance of InGaAs/GaAsP Multiple Quantum Well Solar Cells Grown by a Planetary Metal Organic Vapor Phase Epitaxy Reactor DOI: 10.1143/JJAP.51.10ND15(Journal) (6715574-N) DOI: 10.7567/JJAP.51.10ND15(Journal) ========================================================== Created: 2023-02-01 12:06:30 ConfID: 6715575 CauseID: 1560033723 OtherID: 1363324812 JT: Japanese Journal of Applied Physics MD: Liu,51,10s,1022,2012,Crystalline Silicon/Graphene Oxide Hybrid Junction Solar Cells DOI: 10.1143/JJAP.51.10NE22(Journal) (6715575-N) DOI: 10.7567/JJAP.51.10NE22(Journal) ========================================================== Created: 2023-02-01 12:06:21 ConfID: 6715572 CauseID: 1560033707 OtherID: 1363324832 JT: Japanese Journal of Applied Physics MD: He,51,10s,1036,2012,Enhanced Conversion Efficiency for Si Nanowire–Organic Hybrid Solar Cells through the Incorporation of Organic Small Molecule DOI: 10.1143/JJAP.51.10NE36(Journal) (6715572-N) DOI: 10.7567/JJAP.51.10NE36(Journal) ========================================================== Created: 2023-02-01 12:06:22 ConfID: 6715573 CauseID: 1560033709 OtherID: 1363324886 JT: Japanese Journal of Applied Physics MD: Wertheimer,51,11s,1104,2012,Amine-Rich Organic Thin Films for Cell Culture: Possible Electrostatic Effects in Cell–Surface Interactions DOI: 10.1143/JJAP.51.11PJ04(Journal) (6715573-N) DOI: 10.7567/JJAP.51.11PJ04(Journal) ========================================================== Created: 2023-02-01 12:06:17 ConfID: 6715570 CauseID: 1560033697 OtherID: 1363324838 JT: Japanese Journal of Applied Physics MD: Reindl,51,10s,1011,2012,Investigation of the Performance of Commercial Photovoltaic Modules under Tropical Conditions DOI: 10.1143/JJAP.51.10NF11(Journal) (6715570-N) DOI: 10.7567/JJAP.51.10NF11(Journal) ========================================================== Created: 2023-02-01 12:06:23 ConfID: 6715571 CauseID: 1560033701 OtherID: 1363324779 JT: Japanese Journal of Applied Physics MD: Yeh,51,10s,1001,2012,Composite Films Based on Poly(3,4-ethylene dioxythiophene):Poly(styrene sulfonate) Conducting Polymer and TiC Nanoparticles as the Counter Electrodes for Flexible Dye-Sensitized Solar Cells DOI: 10.1143/JJAP.51.10NE01(Journal) (6715571-N) DOI: 10.7567/JJAP.51.10NE01(Journal) ========================================================== Created: 2023-02-01 12:06:19 ConfID: 6715568 CauseID: 1560033692 OtherID: 1363324813 JT: Japanese Journal of Applied Physics MD: Wang,51,10s,1032,2012,Energy Level Alignment of C60/Ca Interface with Bathocuproine as an Interlayer Studied by Ultraviolet Photoelectron Spectroscopy DOI: 10.1143/JJAP.51.10NE32(Journal) (6715568-N) DOI: 10.7567/JJAP.51.10NE32(Journal) ========================================================== Created: 2023-02-01 12:06:17 ConfID: 6715569 CauseID: 1560033696 OtherID: 1363324810 JT: Japanese Journal of Applied Physics MD: Lin,51,10s,1028,2012,Analysis of Chlorine Ions in Antimony-Doped Tin Oxide Thin Film Using Synchrotron Grazing Incidence X-ray Diffraction DOI: 10.1143/JJAP.51.10NE28(Journal) (6715569-N) DOI: 10.7567/JJAP.51.10NE28(Journal) ========================================================== Created: 2023-02-01 12:06:51 ConfID: 6715582 CauseID: 1560033765 OtherID: 1363324850 JT: Japanese Journal of Applied Physics MD: Shimizu,51,11s,1102,2012,AgNO3-Dependent Morphological Change of Si Nanostructures Prepared by Single-Step Metal Assisted Etching Method DOI: 10.1143/JJAP.51.11PE02(Journal) (6715582-N) DOI: 10.7567/JJAP.51.11PE02(Journal) ========================================================== Created: 2022-12-07 12:19:17 ConfID: 6682812 CauseID: 1553584008 OtherID: 1363888235 JT: Japanese Journal of Applied Physics MD: Itoh,34,12s,6912,1995,Nanoscale Evaluation of Structure and Surface Potential of Gated Field Emitters by Scanning Maxwell-Stress Microscope DOI: 10.1143/JJAP.34.6912(Journal) (6682812-N) DOI: 10.7567/JJAP.34.6912(Journal) ========================================================== Created: 2023-02-01 12:06:57 ConfID: 6715583 CauseID: 1560033779 OtherID: 1363324880 JT: Japanese Journal of Applied Physics MD: Pandey,51,11s,1103,2012,Formation of ZnO Nanoparticles by ZnO- and O- Dual Beam Ion Implantation and Thermal Annealing DOI: 10.1143/JJAP.51.11PG03(Journal) (6715583-N) DOI: 10.7567/JJAP.51.11PG03(Journal) ========================================================== Created: 2023-02-01 12:06:43 ConfID: 6715580 CauseID: 1560033746 OtherID: 1363324878 JT: Japanese Journal of Applied Physics MD: Waegner,51,11s,1104,2012,Enhanced Piezoelectric Response in Nano-Patterned Lead Zirconate Titanate Thin Films DOI: 10.1143/JJAP.51.11PG04(Journal) (6715580-N) DOI: 10.7567/JJAP.51.11PG04(Journal) ========================================================== Created: 2023-02-01 12:06:45 ConfID: 6715581 CauseID: 1560033754 OtherID: 1363324814 JT: Japanese Journal of Applied Physics MD: Maiaugree,51,10s,1020,2012,Co-Electrophoretic Deposition Multiwall Carbon Nanotubes/Pt Counter Electrodes for Dye-Sensitized Solar Cell DOI: 10.1143/JJAP.51.10NE20(Journal) (6715581-N) DOI: 10.7567/JJAP.51.10NE20(Journal) ========================================================== Created: 2023-02-01 12:06:39 ConfID: 6715578 CauseID: 1560033734 OtherID: 1363324824 JT: Japanese Journal of Applied Physics MD: Aoki,51,10s,1013,2012,Early Failure Detection of Interconnection with Rapid Thermal Cycling in Photovoltaic Modules DOI: 10.1143/JJAP.51.10NF13(Journal) (6715578-N) DOI: 10.7567/JJAP.51.10NF13(Journal) ========================================================== Created: 2023-02-01 12:06:35 ConfID: 6715579 CauseID: 1560033736 OtherID: 1363324861 JT: Japanese Journal of Applied Physics MD: Kumagai,51,11s,1103,2012,Improving Crystallinity of Thin Si Film for Low-Energy-Loss Micro-/Nano-Electromechanical Systems Devices by Metal-Induced Lateral Crystallization Using Biomineralized Ni Nanoparticles DOI: 10.1143/JJAP.51.11PA03(Journal) (6715579-N) DOI: 10.7567/JJAP.51.11PA03(Journal) ========================================================== Created: 2023-02-01 12:06:31 ConfID: 6715576 CauseID: 1560033726 OtherID: 1363324867 JT: Japanese Journal of Applied Physics MD: Kurokawa,51,11s,1112,2012,Numerical Approach to the Investigation of Performance of Silicon Nanowire Solar Cells Embedded in a SiO2 Matrix DOI: 10.1143/JJAP.51.11PE12(Journal) (6715576-N) DOI: 10.7567/JJAP.51.11PE12(Journal) ========================================================== Created: 2023-02-01 12:06:34 ConfID: 6715577 CauseID: 1560033733 OtherID: 1363324858 JT: Japanese Journal of Applied Physics MD: Fuyuki,51,11s,1102,2012,Interface States in p-Type GaAs/GaAs1-xBix Heterostructure DOI: 10.1143/JJAP.51.11PC02(Journal) (6715577-N) DOI: 10.7567/JJAP.51.11PC02(Journal) ========================================================== Created: 2023-02-01 12:05:23 ConfID: 6715526 CauseID: 1560033535 OtherID: 1363324766 JT: Japanese Journal of Applied Physics MD: Yamazoe,51,10s,1040,2012,Wide Band Gap and p-Type Conductive BaCuSeF Thin Films Fabricated by Pulsed Laser Deposition DOI: 10.1143/JJAP.51.10NC40(Journal) (6715526-N) DOI: 10.7567/JJAP.51.10NC40(Journal) ========================================================== Created: 2023-02-01 12:05:25 ConfID: 6715527 CauseID: 1560033547 OtherID: 1363324796 JT: Japanese Journal of Applied Physics MD: Ma,51,10s,1009,2012,Optimization of Gas-Switching Sequence for InGaAs/GaAsP Superlattice Structures Using In situ Wafer Curvature Monitoring DOI: 10.1143/JJAP.51.10ND09(Journal) (6715527-N) DOI: 10.7567/JJAP.51.10ND09(Journal) ========================================================== Created: 2023-02-01 12:05:16 ConfID: 6715524 CauseID: 1560033518 OtherID: 1363324889 JT: Japanese Journal of Applied Physics MD: Kitazaki,51,11s,1102,2012,Growth Control of Dry Yeast Using Scalable Atmospheric-Pressure Dielectric Barrier Discharge Plasma Irradiation DOI: 10.1143/JJAP.51.11PJ02(Journal) (6715524-N) DOI: 10.7567/JJAP.51.11PJ02(Journal) ========================================================== Created: 2023-02-01 12:05:20 ConfID: 6715525 CauseID: 1560033527 OtherID: 1363324875 JT: Japanese Journal of Applied Physics MD: Murata,51,11s,1105,2012,Characterization of Highly Concentrated Bi Donors Wire-δ-Doped in Si DOI: 10.1143/JJAP.51.11PE05(Journal) (6715525-N) DOI: 10.7567/JJAP.51.11PE05(Journal) ========================================================== Created: 2023-02-01 12:05:19 ConfID: 6715522 CauseID: 1560033515 OtherID: 1363324775 JT: Japanese Journal of Applied Physics MD: García-Tabarés,51,10s,1005,2012,Impact of a Metal–Organic Vapor Phase Epitaxy Environment on Silicon Substrates for III–V-on-Si Multijunction Solar Cells DOI: 10.1143/JJAP.51.10ND05(Journal) (6715522-N) DOI: 10.7567/JJAP.51.10ND05(Journal) ========================================================== Created: 2023-02-01 12:05:16 ConfID: 6715523 CauseID: 1560033517 OtherID: 1363324849 JT: Japanese Journal of Applied Physics MD: Kang,51,11s,1104,2012,Two Isomeric Didecyl-dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophenes: Impact of Alkylation Positions on Packing Structures and Organic Field Effect Transistor Characteristics DOI: 10.1143/JJAP.51.11PD04(Journal) (6715523-N) DOI: 10.7567/JJAP.51.11PD04(Journal) ========================================================== Created: 2023-02-01 12:05:12 ConfID: 6715520 CauseID: 1560033501 OtherID: 1363324773 JT: Japanese Journal of Applied Physics MD: Bao,51,10s,1031,2012,Prediction of the Band Offsets at the CdS/Cu2ZnSnS4 Interface Based on the First-Principles Calculation DOI: 10.1143/JJAP.51.10NC31(Journal) (6715520-N) DOI: 10.7567/JJAP.51.10NC31(Journal) ========================================================== Created: 2023-02-01 12:05:15 ConfID: 6715521 CauseID: 1560033511 OtherID: 1363324772 JT: Japanese Journal of Applied Physics MD: Koike,51,10s,1034,2012,Cu2SnS3 Thin-Film Solar Cells from Electroplated Precursors DOI: 10.1143/JJAP.51.10NC34(Journal) (6715521-N) DOI: 10.7567/JJAP.51.10NC34(Journal) ========================================================== Created: 2023-02-01 12:05:33 ConfID: 6715534 CauseID: 1560033563 OtherID: 1363324894 JT: Japanese Journal of Applied Physics MD: Iwata,51,11s,1112,2012,Mechanism of Growth of Cr2O3 Thin Films on (11̄02), (112̄0), and (0001) Surfaces of Sapphire Substrates by Direct Current–Radio Frequency Magnetron Sputtering DOI: 10.1143/JJAP.51.11PG12(Journal) (6715534-N) DOI: 10.7567/JJAP.51.11PG12(Journal) ========================================================== Created: 2023-02-01 12:05:34 ConfID: 6715535 CauseID: 1560033565 OtherID: 1363324769 JT: Japanese Journal of Applied Physics MD: Noda,51,10s,1007,2012,Anomalous Capacitance–Voltage Characteristics of GaAs/AlGaAs Multiple Quantum Well Solar Cells DOI: 10.1143/JJAP.51.10ND07(Journal) (6715535-N) DOI: 10.7567/JJAP.51.10ND07(Journal) ========================================================== Created: 2023-02-01 12:05:30 ConfID: 6715532 CauseID: 1560033561 OtherID: 1363324892 JT: Japanese Journal of Applied Physics MD: Shimizu,51,11s,1101,2012,Atmospheric Microplasma Application for Surface Modification of Biomaterials DOI: 10.1143/JJAP.51.11PJ01(Journal) (6715532-N) DOI: 10.7567/JJAP.51.11PJ01(Journal) ========================================================== Created: 2023-02-01 12:05:33 ConfID: 6715533 CauseID: 1560033562 OtherID: 1363324872 JT: Japanese Journal of Applied Physics MD: Lee,51,11s,1111,2012,Zinc Oxide Nanowire Forest for Pool Boiling Heat Transfer DOI: 10.1143/JJAP.51.11PE11(Journal) (6715533-N) DOI: 10.7567/JJAP.51.11PE11(Journal) ========================================================== Created: 2023-02-01 12:05:26 ConfID: 6715530 CauseID: 1560033552 OtherID: 1363324879 JT: Japanese Journal of Applied Physics MD: Uehara,51,11s,1107,2012,Hetero-epitaxial Growth of Cubic La(Sr)MnO3 on Hexagonal ZnO, In-Plane Orientations of La(Sr)MnO3 (001), (110), and (111) Phases DOI: 10.1143/JJAP.51.11PG07(Journal) (6715530-N) DOI: 10.7567/JJAP.51.11PG07(Journal) ========================================================== Created: 2023-02-01 12:05:27 ConfID: 6715531 CauseID: 1560033553 OtherID: 1363324792 JT: Japanese Journal of Applied Physics MD: Watanabe,51,10s,1010,2012,Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells DOI: 10.1143/JJAP.51.10ND10(Journal) (6715531-N) DOI: 10.7567/JJAP.51.10ND10(Journal) ========================================================== Created: 2023-02-01 12:05:29 ConfID: 6715528 CauseID: 1560033549 OtherID: 1363324785 JT: Japanese Journal of Applied Physics MD: Elborg,51,10s,1014,2012,Extension of Absorption Wavelength in GaAs/AlGaAs Quantum Dots with Underlying Quantum Well for Solar Cell Application DOI: 10.1143/JJAP.51.10ND14(Journal) (6715528-N) DOI: 10.7567/JJAP.51.10ND14(Journal) ========================================================== Created: 2023-02-01 12:05:29 ConfID: 6715529 CauseID: 1560033550 OtherID: 1363324859 JT: Japanese Journal of Applied Physics MD: Kudo,51,11s,1105,2012,Nanoimprinted Step-Edge Vertical-Channel Organic Transistors DOI: 10.1143/JJAP.51.11PD05(Journal) (6715529-N) DOI: 10.7567/JJAP.51.11PD05(Journal) ========================================================== Created: 2023-02-01 12:05:39 ConfID: 6715542 CauseID: 1560033582 OtherID: 1363324887 JT: Japanese Journal of Applied Physics MD: Badica,51,11s,1113,2012,Composites of MgB2 with Bi2O3, Bi, Sb2O3, or Sb Obtained by Ex-situ Spark Plasma Sintering DOI: 10.1143/JJAP.51.11PG13(Journal) (6715542-N) DOI: 10.7567/JJAP.51.11PG13(Journal) ========================================================== Created: 2023-02-01 12:05:43 ConfID: 6715543 CauseID: 1560033588 OtherID: 1363324869 JT: Japanese Journal of Applied Physics MD: Tatebayashi,51,11s,1113,2012,Optical Properties of Site-Controlled InGaAs Quantum Dots Embedded in GaAs Nanowires by Selective Metalorganic Chemical Vapor Deposition DOI: 10.1143/JJAP.51.11PE13(Journal) (6715543-N) DOI: 10.7567/JJAP.51.11PE13(Journal) ========================================================== Created: 2023-02-01 12:05:37 ConfID: 6715540 CauseID: 1560033579 OtherID: 1363324782 JT: Japanese Journal of Applied Physics MD: Nabemoto,51,10s,1011,2012,Effect of Anti-Soiling Layer Coated on Poly(methyl methacrylate) for Concentrator Photovoltaic Modules DOI: 10.1143/JJAP.51.10ND11(Journal) (6715540-N) DOI: 10.7567/JJAP.51.10ND11(Journal) ========================================================== Created: 2023-02-01 12:05:38 ConfID: 6715541 CauseID: 1560033580 OtherID: 1363324794 JT: Japanese Journal of Applied Physics MD: Antón,51,10s,1012,2012,Characterization Capabilities of Solar Simulators for Concentrator Photovoltaic Modules DOI: 10.1143/JJAP.51.10ND12(Journal) (6715541-N) DOI: 10.7567/JJAP.51.10ND12(Journal) ========================================================== Created: 2023-02-01 12:05:32 ConfID: 6715538 CauseID: 1560033569 OtherID: 1363324877 JT: Japanese Journal of Applied Physics MD: Nagashima,51,11s,1109,2012,Switching Properties of Titanium Dioxide Nanowire Memristor DOI: 10.1143/JJAP.51.11PE09(Journal) (6715538-N) DOI: 10.7567/JJAP.51.11PE09(Journal) ========================================================== Created: 2023-02-01 12:05:35 ConfID: 6715539 CauseID: 1560033575 OtherID: 1363324791 JT: Japanese Journal of Applied Physics MD: Kinoshita,51,10s,1002,2012,Visible to Near-Infrared Photoelectric Conversion in a Dye-Sensitized Solar Cell Using Ru(II) Porphyrin with Azopyridine Axial Ligands DOI: 10.1143/JJAP.51.10NE02(Journal) (6715539-N) DOI: 10.7567/JJAP.51.10NE02(Journal) ========================================================== Created: 2023-02-01 12:05:31 ConfID: 6715536 CauseID: 1560033566 OtherID: 1363324864 JT: Japanese Journal of Applied Physics MD: Meda,51,11s,1106,2012,Electrochemical Properties of Tungsten Oxide Nanowires Compared to Bulk Particles DOI: 10.1143/JJAP.51.11PE06(Journal) (6715536-N) DOI: 10.7567/JJAP.51.11PE06(Journal) ========================================================== Created: 2023-02-01 12:05:32 ConfID: 6715537 CauseID: 1560033568 OtherID: 1363324882 JT: Japanese Journal of Applied Physics MD: Mashiko,51,11s,1111,2012,Epitaxial Structures of Band-Gap-Engineered α-(CrxFe1-x)2O3 (0 ≤x≤1) Films Grown on C-Plane Sapphire DOI: 10.1143/JJAP.51.11PG11(Journal) (6715537-N) DOI: 10.7567/JJAP.51.11PG11(Journal) ========================================================== Created: 2023-02-01 12:05:48 ConfID: 6715550 CauseID: 1560033606 OtherID: 1363324757 JT: Japanese Journal of Applied Physics MD: Gao,51,10s,1029,2012,Structural and Optical Properties of In-Free Cu2ZnSn(S,Se)4 Solar Cell Materials DOI: 10.1143/JJAP.51.10NC29(Journal) (6715550-N) DOI: 10.7567/JJAP.51.10NC29(Journal) ========================================================== Created: 2023-02-01 12:05:49 ConfID: 6715551 CauseID: 1560033607 OtherID: 1363324833 JT: Japanese Journal of Applied Physics MD: Yoshida,51,10s,1009,2012,Estimation of Energy and Analysis of Time-Related Degradation Using Contour Map of Photovoltaic Module Performance DOI: 10.1143/JJAP.51.10NF09(Journal) (6715551-N) DOI: 10.7567/JJAP.51.10NF09(Journal) ========================================================== Created: 2023-02-01 12:05:42 ConfID: 6715548 CauseID: 1560033598 OtherID: 1363324783 JT: Japanese Journal of Applied Physics MD: Manzhos,51,10s,1003,2012,Isotopic Substitution as a Strategy to Control Non-Adiabatic Dynamics in Photoelectrochemical Cells: Surface Complexes between TiO2 and Dicyanomethylene Compounds DOI: 10.1143/JJAP.51.10NE03(Journal) (6715548-N) DOI: 10.7567/JJAP.51.10NE03(Journal) ========================================================== Created: 2023-02-01 12:05:48 ConfID: 6715549 CauseID: 1560033605 OtherID: 1363324876 JT: Japanese Journal of Applied Physics MD: Ishikawa,51,11s,1101,2012,Layer-by-Layer Assembled Transparent Conductive Graphene Films for Silicon Thin-Film Solar Cells DOI: 10.1143/JJAP.51.11PF01(Journal) (6715549-N) DOI: 10.7567/JJAP.51.11PF01(Journal) ========================================================== Created: 2023-02-01 12:05:40 ConfID: 6715546 CauseID: 1560033593 OtherID: 1363324752 JT: Japanese Journal of Applied Physics MD: Nakakoba,51,10s,1024,2012,Effects of Bi Incorporation on Cu(In1-x,Gax)Se2 Thin Films and Solar Cells DOI: 10.1143/JJAP.51.10NC24(Journal) (6715546-N) DOI: 10.7567/JJAP.51.10NC24(Journal) ========================================================== Created: 2023-02-01 12:05:41 ConfID: 6715547 CauseID: 1560033595 OtherID: 1363324893 JT: Japanese Journal of Applied Physics MD: Okamoto,51,11s,1101,2012,Synthesis of Au Nanorods by Using Gamma-ray Irradiation DOI: 10.1143/JJAP.51.11PH01(Journal) (6715547-N) DOI: 10.7567/JJAP.51.11PH01(Journal) ========================================================== Created: 2023-02-01 12:05:44 ConfID: 6715544 CauseID: 1560033590 OtherID: 1363324795 JT: Japanese Journal of Applied Physics MD: Watanabe,51,10s,1018,2012,Fabrication of Monolithic Integrated Series-Connected GaAs Photovoltaic Cells for Concentrator Applications DOI: 10.1143/JJAP.51.10ND18(Journal) (6715544-N) DOI: 10.7567/JJAP.51.10ND18(Journal) ========================================================== Created: 2023-02-01 12:05:44 ConfID: 6715545 CauseID: 1560033591 OtherID: 1363324789 JT: Japanese Journal of Applied Physics MD: Akitsu,51,10s,1004,2012,Polymer-Sensitized Solar Cells Using Polythiophene Derivatives with Directly Attached Carboxylic Acid Groups DOI: 10.1143/JJAP.51.10NE04(Journal) (6715545-N) DOI: 10.7567/JJAP.51.10NE04(Journal) ========================================================== Created: 2023-02-01 12:34:00 ConfID: 6715750 CauseID: 1560038444 OtherID: 1363320338 JT: Japanese Journal of Applied Physics MD: Kuo,51,2r,27201,2012,Splitter Microchannel Network for Equal Plasma Flow Division on Compact Disk Microfluidic Chip DOI: 10.1143/JJAP.51.027201(Journal) (6715750-N) DOI: 10.7567/JJAP.51.027201(Journal) ========================================================== Created: 2023-02-01 12:34:01 ConfID: 6715751 CauseID: 1560038446 OtherID: 1363320879 JT: Japanese Journal of Applied Physics MD: Kuo,51,6r,60202,2012,Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching DOI: 10.1143/JJAP.51.060202(Journal) (6715751-N) DOI: 10.7567/JJAP.51.060202(Journal) ========================================================== Created: 2023-02-01 12:33:56 ConfID: 6715748 CauseID: 1560038439 OtherID: 1363320869 JT: Japanese Journal of Applied Physics MD: Naganuma,51,6r,61501,2012,Structural Analyses of Co- and Mn-Substituted BiFeO3 Polycrystalline Films DOI: 10.1143/JJAP.51.061501(Journal) (6715748-N) DOI: 10.7567/JJAP.51.061501(Journal) ========================================================== Created: 2023-02-01 12:33:57 ConfID: 6715749 CauseID: 1560038441 OtherID: 1363320335 JT: Japanese Journal of Applied Physics MD: An,51,2r,26501,2012,Effect of Process Parameters on Particle Removal Efficiency in Poly(vinyl alcohol) Brush Scrubber Cleaning DOI: 10.1143/JJAP.51.026501(Journal) (6715749-N) DOI: 10.7567/JJAP.51.026501(Journal) ========================================================== Created: 2023-02-01 12:33:54 ConfID: 6715746 CauseID: 1560038422 OtherID: 1363320294 JT: Japanese Journal of Applied Physics MD: Ou-Yang,51,2r,24102,2012,Effect of an Upward and Downward Interface Dipole Langmuir–Blodgett Monolayer on Pentacene Organic Field-Effect Transistors: A Comparison Study DOI: 10.1143/JJAP.51.024102(Journal) (6715746-N) DOI: 10.7567/JJAP.51.024102(Journal) ========================================================== Created: 2023-02-01 12:33:52 ConfID: 6715747 CauseID: 1560038428 OtherID: 1363320834 JT: Japanese Journal of Applied Physics MD: Yang,51,5r,56601,2012,Topographic Contrast in Force Modulation Atomic Force Microscopy Images DOI: 10.1143/JJAP.51.056601(Journal) (6715747-N) DOI: 10.7567/JJAP.51.056601(Journal) ========================================================== Created: 2023-02-01 12:33:53 ConfID: 6715744 CauseID: 1560038419 OtherID: 1363320281 JT: Japanese Journal of Applied Physics MD: Enpuku,51,2r,23002,2012,Characterization of Magnetic Markers for Liquid-Phase Immunoassays Using Brownian Relaxation DOI: 10.1143/JJAP.51.023002(Journal) (6715744-N) DOI: 10.7567/JJAP.51.023002(Journal) ========================================================== Created: 2023-02-01 12:33:50 ConfID: 6715745 CauseID: 1560038417 OtherID: 1363320820 JT: Japanese Journal of Applied Physics MD: Zen,51,5r,56201,2012,Development of Low-Temperature Sintering Technique for Dye-Sensitized Solar Cells Combined with Dielectric Barrier Discharge Treatment DOI: 10.1143/JJAP.51.056201(Journal) (6715745-N) DOI: 10.7567/JJAP.51.056201(Journal) ========================================================== Created: 2023-02-01 12:34:07 ConfID: 6715758 CauseID: 1560038463 OtherID: 1363320301 JT: Japanese Journal of Applied Physics MD: Itoh,51,2r,25701,2012,Copper Filling of Deep Submicrometer Trenches with Ruthenium-Lined Barrier Metal by High-Vacuum Magnetron Sputtering Using Argon Gas with Added Oxygen DOI: 10.1143/JJAP.51.025701(Journal) (6715758-N) DOI: 10.7567/JJAP.51.025701(Journal) ========================================================== Created: 2023-02-01 12:34:08 ConfID: 6715759 CauseID: 1560038465 OtherID: 1363321051 JT: Japanese Journal of Applied Physics MD: Nagase,51,7r,70202,2012,Selective-Area Growth of Thick Diamond Films Using Chemically Stable Masks of Ru/Au and Mo/Au DOI: 10.1143/JJAP.51.070202(Journal) (6715759-N) DOI: 10.7567/JJAP.51.070202(Journal) ========================================================== Created: 2023-02-01 12:34:06 ConfID: 6715756 CauseID: 1560038457 OtherID: 1363320261 JT: Japanese Journal of Applied Physics MD: Promros,51,2r,21301,2012,n-Type Nanocrystalline FeSi2/intrinsic Si/p-Type Si Heterojunction Photodiodes Fabricated by Facing-Target Direct-Current Sputtering DOI: 10.1143/JJAP.51.021301(Journal) (6715756-N) DOI: 10.7567/JJAP.51.021301(Journal) ========================================================== Created: 2023-02-01 12:34:07 ConfID: 6715757 CauseID: 1560038461 OtherID: 1363321070 JT: Japanese Journal of Applied Physics MD: Horikiri,51,7r,76202,2012,Dry Etching of Lead-Free (K,Na)NbO3 Piezoelectric Films by Ar/C4F8 Plasma DOI: 10.1143/JJAP.51.076202(Journal) (6715757-N) DOI: 10.7567/JJAP.51.076202(Journal) ========================================================== Created: 2023-02-01 12:34:02 ConfID: 6715754 CauseID: 1560038448 OtherID: 1363320873 JT: Japanese Journal of Applied Physics MD: Lee,51,6r,61101,2012,Effects of Annealing Temperature on Electrical Characteristics of Solution-Processed Zinc Tin Oxide Thin-Film Transistors DOI: 10.1143/JJAP.51.061101(Journal) (6715754-N) DOI: 10.7567/JJAP.51.061101(Journal) ========================================================== Created: 2023-02-01 12:34:04 ConfID: 6715755 CauseID: 1560038453 OtherID: 1363320868 JT: Japanese Journal of Applied Physics MD: Jung,51,6r,61001,2012,Carrier Transport Mechanism of a Low Resistance Ti/Al Ohmic Contact on (112̄2) Semipolar n-Type GaN DOI: 10.1143/JJAP.51.061001(Journal) (6715755-N) DOI: 10.7567/JJAP.51.061001(Journal) ========================================================== Created: 2023-02-01 12:33:50 ConfID: 6715752 CauseID: 1560038424 OtherID: 1363320866 JT: Japanese Journal of Applied Physics MD: Sanid,51,6r,63001,2012,Spin-Transfer-Torque Driven Magneto-Logic Gates Using Nano Spin-Valve Pillars DOI: 10.1143/JJAP.51.063001(Journal) (6715752-N) DOI: 10.7567/JJAP.51.063001(Journal) ========================================================== Created: 2023-02-01 12:34:01 ConfID: 6715753 CauseID: 1560038447 OtherID: 1363320894 JT: Japanese Journal of Applied Physics MD: Katamune,51,6r,68002,2012,Effects of Aluminum Incorporation on Diamond Grain Growth in Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films Prepared by Coaxial Arc Plasma Deposition DOI: 10.1143/JJAP.51.068002(Journal) (6715753-N) DOI: 10.7567/JJAP.51.068002(Journal) ========================================================== Created: 2023-02-01 12:34:15 ConfID: 6715766 CauseID: 1560038493 OtherID: 1363320313 JT: Japanese Journal of Applied Physics MD: Matsui,51,2r,25603,2012,Mechanism of Surface Morphology Development of Tin Oxide Transparent Conductive Films DOI: 10.1143/JJAP.51.025603(Journal) (6715766-N) DOI: 10.7567/JJAP.51.025603(Journal) ========================================================== Created: 2023-02-01 12:34:17 ConfID: 6715767 CauseID: 1560038501 OtherID: 1363321264 JT: Japanese Journal of Applied Physics MD: Zhao,51,8r,82701,2012,Diode-Pumped Actively Q-Switched Nd:Lu0.1Y0.9VO4 Laser at 1.34 µm DOI: 10.1143/JJAP.51.082701(Journal) (6715767-N) DOI: 10.7567/JJAP.51.082701(Journal) ========================================================== Created: 2023-02-01 12:34:14 ConfID: 6715764 CauseID: 1560038483 OtherID: 1363320525 JT: Japanese Journal of Applied Physics MD: Zhang,51,3r,30207,2012,Photoluminescence Studies of Polarization Effects in InGaN/(In)GaN Multiple Quantum Well Structures DOI: 10.1143/JJAP.51.030207(Journal) (6715764-N) DOI: 10.7567/JJAP.51.030207(Journal) ========================================================== Created: 2023-02-01 12:34:18 ConfID: 6715765 CauseID: 1560038487 OtherID: 1363320890 JT: Japanese Journal of Applied Physics MD: Guo,51,6r,65001,2012,Three-Dimensional Nanostructure Fabrication by Controlling Downward Growth on Focused-Ion-Beam Chemical Vapor Deposition DOI: 10.1143/JJAP.51.065001(Journal) (6715765-N) DOI: 10.7567/JJAP.51.065001(Journal) ========================================================== Created: 2023-02-01 12:34:12 ConfID: 6715762 CauseID: 1560038478 OtherID: 1363320897 JT: Japanese Journal of Applied Physics MD: Jevasuwan,51,6r,65701,2012,Controlling Anion Composition at Metal–Insulator–Semiconductor Interfaces on III–V Channels by Plasma Processing DOI: 10.1143/JJAP.51.065701(Journal) (6715762-N) DOI: 10.7567/JJAP.51.065701(Journal) ========================================================== Created: 2023-02-01 12:34:13 ConfID: 6715763 CauseID: 1560038479 OtherID: 1363320531 JT: Japanese Journal of Applied Physics MD: Lin,51,3r,34201,2012,A Novel Coplanar-Waveguide Band-Pass Filter Utilizing the Inductor–Capacitor Structure in 0.18 µm Complementary Metal–Oxide–Semiconductor Technology for Millimeter-Wave Applications DOI: 10.1143/JJAP.51.034201(Journal) (6715763-N) DOI: 10.7567/JJAP.51.034201(Journal) ========================================================== Created: 2023-02-01 12:34:10 ConfID: 6715760 CauseID: 1560038470 OtherID: 1363321237 JT: Japanese Journal of Applied Physics MD: Lee,51,8r,82102,2012,Improved Light Extraction of GaN-Based Light-Emitting Diodes by an Ion-Damaged Current Blocking Layer DOI: 10.1143/JJAP.51.082102(Journal) (6715760-N) DOI: 10.7567/JJAP.51.082102(Journal) ========================================================== Created: 2023-02-01 12:34:10 ConfID: 6715761 CauseID: 1560038472 OtherID: 1363320883 JT: Japanese Journal of Applied Physics MD: Ito,51,6r,68001,2012,Negative Anisotropic Magnetoresistance in γ'-Fe4N Epitaxial Films on SrTiO3(001) Grown by Molecular Beam Epitaxy DOI: 10.1143/JJAP.51.068001(Journal) (6715761-N) DOI: 10.7567/JJAP.51.068001(Journal) ========================================================== Created: 2023-02-01 12:34:27 ConfID: 6715774 CauseID: 1560038538 OtherID: 1363320545 JT: Japanese Journal of Applied Physics MD: Noei,51,3r,35101,2012,A Computational Study on the Electronic Properties of Armchair Graphene Nanoribbons Confined by Boron Nitride DOI: 10.1143/JJAP.51.035101(Journal) (6715774-N) DOI: 10.7567/JJAP.51.035101(Journal) ========================================================== Created: 2023-02-01 12:34:27 ConfID: 6715775 CauseID: 1560038539 OtherID: 1363320526 JT: Japanese Journal of Applied Physics MD: Huang,51,3r,31701,2012,Characterization of Ionic Impurities Adsorbed onto a 5° SiOx Alignment Film DOI: 10.1143/JJAP.51.031701(Journal) (6715775-N) DOI: 10.7567/JJAP.51.031701(Journal) ========================================================== Created: 2023-02-01 12:34:29 ConfID: 6715772 CauseID: 1560038534 OtherID: 1363321067 JT: Japanese Journal of Applied Physics MD: Cho,51,7r,74003,2012,Electrical Field Gradient Pumping of Parametric Oscillation in a High-Frequency Nanoelectromechanical Resonator DOI: 10.1143/JJAP.51.074003(Journal) (6715772-N) DOI: 10.7567/JJAP.51.074003(Journal) ========================================================== Created: 2023-02-01 12:34:26 ConfID: 6715773 CauseID: 1560038536 OtherID: 1363320885 JT: Japanese Journal of Applied Physics MD: Sakata,51,6r,66501,2012,Removal of Gold Oxide by Low-Temperature Hydrogen Annealing for Microelectromechanical System Device Fabrication DOI: 10.1143/JJAP.51.066501(Journal) (6715773-N) DOI: 10.7567/JJAP.51.066501(Journal) ========================================================== Created: 2023-02-01 12:34:28 ConfID: 6715770 CauseID: 1560038530 OtherID: 1363320887 JT: Japanese Journal of Applied Physics MD: Akamaru,51,6r,65201,2012,Preparation of Ni Nanoparticles on Submicron-Sized Al2O3 Powdery Substrate by Polyhedral-Barrel-Sputtering Technique and Their Magnetic Properties DOI: 10.1143/JJAP.51.065201(Journal) (6715770-N) DOI: 10.7567/JJAP.51.065201(Journal) ========================================================== Created: 2023-02-01 12:34:28 ConfID: 6715771 CauseID: 1560038532 OtherID: 1363320373 JT: Japanese Journal of Applied Physics MD: Peng,51,2r,27302,2012,Increased Interfacial Strength at Microscale Silicon–Polymer Interface by Nanowires Assisted Micro-Sandglass Shaped Interlocks DOI: 10.1143/JJAP.51.027302(Journal) (6715771-N) DOI: 10.7567/JJAP.51.027302(Journal) ========================================================== Created: 2023-02-01 12:34:20 ConfID: 6715768 CauseID: 1560038515 OtherID: 1363320329 JT: Japanese Journal of Applied Physics MD: Fukasawa,51,2r,26201,2012,Vacuum Ultraviolet and Ultraviolet Radiation-Induced Effect of Hydrogenated Silicon Nitride Etching: Surface Reaction Enhancement and Damage Generation DOI: 10.1143/JJAP.51.026201(Journal) (6715768-N) DOI: 10.7567/JJAP.51.026201(Journal) ========================================================== Created: 2023-02-01 12:34:23 ConfID: 6715769 CauseID: 1560038523 OtherID: 1363320533 JT: Japanese Journal of Applied Physics MD: Alias,51,3r,35503,2012,Temperature Dependence of CuGaO2 Films Fabricated by Sol–Gel Method DOI: 10.1143/JJAP.51.035503(Journal) (6715769-N) DOI: 10.7567/JJAP.51.035503(Journal) ========================================================== Created: 2023-02-01 12:33:15 ConfID: 6715718 CauseID: 1560038328 OtherID: 1363320878 JT: Japanese Journal of Applied Physics MD: Lin,51,6r,64301,2012,Characteristics of n-Type Asymmetric Schottky-Barrier Transistors with Silicided Schottky-Barrier Source and Heavily n-Type Doped Channel and Drain DOI: 10.1143/JJAP.51.064301(Journal) (6715718-N) DOI: 10.7567/JJAP.51.064301(Journal) ========================================================== Created: 2023-02-01 12:33:16 ConfID: 6715719 CauseID: 1560038336 OtherID: 1363320812 JT: Japanese Journal of Applied Physics MD: Yamauchi,51,5r,56301,2012,Thresholds of Etchable Track Formation and Chemical Damage Parameters in Poly(ethylene terephthalate), Bisphenol A polycarbonate, and Poly(allyl diglycol carbonate) Films at the Stopping Powers Ranging from 10 to 12,000 keV/µm DOI: 10.1143/JJAP.51.056301(Journal) (6715719-N) DOI: 10.7567/JJAP.51.056301(Journal) ========================================================== Created: 2023-02-01 12:33:13 ConfID: 6715716 CauseID: 1560038310 OtherID: 1363320330 JT: Japanese Journal of Applied Physics MD: Hayashi,51,2r,26505,2012,Quantum Chemical Investigation of Si Chemical Dry Etching by Flowing NF3 into N2 Downflow Plasma DOI: 10.1143/JJAP.51.026505(Journal) (6715716-N) DOI: 10.7567/JJAP.51.026505(Journal) ========================================================== Created: 2023-02-01 12:33:19 ConfID: 6715717 CauseID: 1560038326 OtherID: 1363320801 JT: Japanese Journal of Applied Physics MD: Imaki,51,5r,52401,2012,Efficient Ultraviolet Rotational Raman Lidar for Temperature Profiling of the Planetary Boundary Layer DOI: 10.1143/JJAP.51.052401(Journal) (6715717-N) DOI: 10.7567/JJAP.51.052401(Journal) ========================================================== Created: 2023-02-01 12:33:11 ConfID: 6715714 CauseID: 1560038301 OtherID: 1363320824 JT: Japanese Journal of Applied Physics MD: Fukushima,51,5r,55601,2012,Control of In Surface Segregation and Inter-Diffusion in GaAs on InGaP Grown by Metal–Organic Vapor Phase Epitaxy DOI: 10.1143/JJAP.51.055601(Journal) (6715714-N) DOI: 10.7567/JJAP.51.055601(Journal) ========================================================== Created: 2023-02-01 12:33:13 ConfID: 6715715 CauseID: 1560038309 OtherID: 1363320651 JT: Japanese Journal of Applied Physics MD: Koshimizu,51,4r,46201,2012,Simultaneous In situ Measurement of Silicon Substrate Temperature and Silicon Dioxide Film Thickness during Plasma Etching of Silicon Dioxide Using Low-Coherence Interferometry DOI: 10.1143/JJAP.51.046201(Journal) (6715715-N) DOI: 10.7567/JJAP.51.046201(Journal) ========================================================== Created: 2023-02-01 12:33:06 ConfID: 6715712 CauseID: 1560038281 OtherID: 1363320271 JT: Japanese Journal of Applied Physics MD: Takeda,51,2r,21604,2012,Complementary Circuit with Self-Alignment Organic/Oxide Thin-Film Transistors DOI: 10.1143/JJAP.51.021604(Journal) (6715712-N) DOI: 10.7567/JJAP.51.021604(Journal) ========================================================== Created: 2023-02-01 12:33:10 ConfID: 6715713 CauseID: 1560038298 OtherID: 1363320661 JT: Japanese Journal of Applied Physics MD: Kim,51,4r,46401,2012,Quenching Effect, Signal to Noise, Contrast to Noise Ratios on Scintillator Screens for Proton Beam Dosimetry System DOI: 10.1143/JJAP.51.046401(Journal) (6715713-N) DOI: 10.7567/JJAP.51.046401(Journal) ========================================================== Created: 2023-02-01 12:33:29 ConfID: 6715726 CauseID: 1560038363 OtherID: 1363320263 JT: Japanese Journal of Applied Physics MD: Zhang,51,2r,20204,2012,Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres DOI: 10.1143/JJAP.51.020204(Journal) (6715726-N) DOI: 10.7567/JJAP.51.020204(Journal) ========================================================== Created: 2023-02-01 12:33:25 ConfID: 6715727 CauseID: 1560038364 OtherID: 1363320891 JT: Japanese Journal of Applied Physics MD: Jaber,51,6r,65801,2012,SnS2 Thin Film Deposition by Spray Pyrolysis DOI: 10.1143/JJAP.51.065801(Journal) (6715727-N) DOI: 10.7567/JJAP.51.065801(Journal) ========================================================== Created: 2023-02-01 12:33:24 ConfID: 6715724 CauseID: 1560038349 OtherID: 1363320803 JT: Japanese Journal of Applied Physics MD: Kuzmik,51,5r,54102,2012,Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors DOI: 10.1143/JJAP.51.054102(Journal) (6715724-N) DOI: 10.7567/JJAP.51.054102(Journal) ========================================================== Created: 2023-02-01 12:33:20 ConfID: 6715725 CauseID: 1560038350 OtherID: 1363320312 JT: Japanese Journal of Applied Physics MD: Li,51,2r,25504,2012,Preparation of Low Resistivity Transparent Conductive Nb-Doped TiO2 Films by the Co-sputtering Method DOI: 10.1143/JJAP.51.025504(Journal) (6715725-N) DOI: 10.7567/JJAP.51.025504(Journal) ========================================================== Created: 2023-02-01 12:33:23 ConfID: 6715722 CauseID: 1560038347 OtherID: 1363320798 JT: Japanese Journal of Applied Physics MD: Wang,51,5r,54301,2012,A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.51.054301(Journal) (6715722-N) DOI: 10.7567/JJAP.51.054301(Journal) ========================================================== Created: 2023-02-01 12:33:24 ConfID: 6715723 CauseID: 1560038348 OtherID: 1363320808 JT: Japanese Journal of Applied Physics MD: Kang,51,5r,53002,2012,Quantum Transport Theory of Direct Current Conductivity in the Presence of Spin–Orbit Interaction DOI: 10.1143/JJAP.51.053002(Journal) (6715723-N) DOI: 10.7567/JJAP.51.053002(Journal) ========================================================== Created: 2023-02-01 12:33:17 ConfID: 6715720 CauseID: 1560038337 OtherID: 1363320805 JT: Japanese Journal of Applied Physics MD: Lee,51,5r,52602,2012,Transparent Conductive Distributed Bragg Reflectors Composed of High and Low Refractive Index Transparent Conductive Films DOI: 10.1143/JJAP.51.052602(Journal) (6715720-N) DOI: 10.7567/JJAP.51.052602(Journal) ========================================================== Created: 2023-02-01 12:33:23 ConfID: 6715721 CauseID: 1560038345 OtherID: 1363320277 JT: Japanese Journal of Applied Physics MD: Takeuchi,51,2r,22502,2012,Performance Test and Evaluation of Multilevel Fresnel Zone Plate with Three-Step Profile Fabricated with Electron-Beam Lithography DOI: 10.1143/JJAP.51.022502(Journal) (6715721-N) DOI: 10.7567/JJAP.51.022502(Journal) ========================================================== Created: 2023-02-01 12:33:38 ConfID: 6715734 CauseID: 1560038386 OtherID: 1363320811 JT: Japanese Journal of Applied Physics MD: Itabashi,51,5r,55104,2012,Ultraviolet Photoresponse Properties of Single-Walled Carbon Nanotubes Decorated with Thickness-Controlled ZnO Layer by Pulsed Laser Deposition DOI: 10.1143/JJAP.51.055104(Journal) (6715734-N) DOI: 10.7567/JJAP.51.055104(Journal) ========================================================== Created: 2023-02-01 12:33:40 ConfID: 6715735 CauseID: 1560038390 OtherID: 1363320781 JT: Japanese Journal of Applied Physics MD: Shen,51,5r,51701,2012,Uniform Dispersion of Liquid Crystal Droplets in the Polymer Matrix by Chemical Affinity Difference-Induced Phase Separation DOI: 10.1143/JJAP.51.051701(Journal) (6715735-N) DOI: 10.7567/JJAP.51.051701(Journal) ========================================================== Created: 2023-02-01 12:33:34 ConfID: 6715732 CauseID: 1560038377 OtherID: 1363320822 JT: Japanese Journal of Applied Physics MD: Maruyama,51,5r,55102,2012,Near-Edge X-Ray Absorption Fine Structure Study of Vertically Aligned Carbon Nanotubes Grown by the Surface Decomposition of SiC DOI: 10.1143/JJAP.51.055102(Journal) (6715732-N) DOI: 10.7567/JJAP.51.055102(Journal) ========================================================== Created: 2023-02-01 12:33:35 ConfID: 6715733 CauseID: 1560038380 OtherID: 1363320867 JT: Japanese Journal of Applied Physics MD: Guangjie,51,6r,60203,2012,Determination of Ratio of Diamagnetic Anisotropy of a Biaxial Crystal by X-ray Diffraction Measurement DOI: 10.1143/JJAP.51.060203(Journal) (6715733-N) DOI: 10.7567/JJAP.51.060203(Journal) ========================================================== Created: 2023-02-01 12:33:31 ConfID: 6715730 CauseID: 1560038371 OtherID: 1363320295 JT: Japanese Journal of Applied Physics MD: Sedlakova,51,2r,24105,2012,Noise in Submicron Metal–Oxide–Semiconductor Field Effect Transistors: Lateral Electron Density Distribution and Active Trap Position DOI: 10.1143/JJAP.51.024105(Journal) (6715730-N) DOI: 10.7567/JJAP.51.024105(Journal) ========================================================== Created: 2023-02-01 12:33:33 ConfID: 6715731 CauseID: 1560038375 OtherID: 1363320283 JT: Japanese Journal of Applied Physics MD: Choi,51,2r,24103,2012,Hot-Carrier Effects in Short Channel (L = 1.5 µm) p-Type Polycrystalline Silicon Thin-Film Transistors DOI: 10.1143/JJAP.51.024103(Journal) (6715731-N) DOI: 10.7567/JJAP.51.024103(Journal) ========================================================== Created: 2023-02-01 12:33:27 ConfID: 6715728 CauseID: 1560038366 OtherID: 1363320807 JT: Japanese Journal of Applied Physics MD: He,51,5r,54103,2012,Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors DOI: 10.1143/JJAP.51.054103(Journal) (6715728-N) DOI: 10.7567/JJAP.51.054103(Journal) ========================================================== Created: 2023-02-01 12:33:32 ConfID: 6715729 CauseID: 1560038372 OtherID: 1363320305 JT: Japanese Journal of Applied Physics MD: Zhang,51,2r,24302,2012,Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer DOI: 10.1143/JJAP.51.024302(Journal) (6715729-N) DOI: 10.7567/JJAP.51.024302(Journal) ========================================================== Created: 2023-02-01 12:33:46 ConfID: 6715742 CauseID: 1560038409 OtherID: 1363320799 JT: Japanese Journal of Applied Physics MD: Kimura,51,5r,54302,2012,Practical Guidance of Parameter Extraction for Device Simulation of Thin-Film Transistors DOI: 10.1143/JJAP.51.054302(Journal) (6715742-N) DOI: 10.7567/JJAP.51.054302(Journal) ========================================================== Created: 2023-02-01 12:33:45 ConfID: 6715743 CauseID: 1560038408 OtherID: 1363320282 JT: Japanese Journal of Applied Physics MD: Endo,51,2r,22701,2012,Positive Gain Observation in a Nd-Doped Active Fiber Pumped by Low-Concentrated Solar-Like Xenon Lamp DOI: 10.1143/JJAP.51.022701(Journal) (6715743-N) DOI: 10.7567/JJAP.51.022701(Journal) ========================================================== Created: 2023-02-01 12:33:49 ConfID: 6715740 CauseID: 1560038406 OtherID: 1363320874 JT: Japanese Journal of Applied Physics MD: Ono,51,6r,61601,2012,Effects of Polarization Azimuth of Writing Beams on Diffraction Properties in Vector Holograms Using Radially Polarized Light DOI: 10.1143/JJAP.51.061601(Journal) (6715740-N) DOI: 10.7567/JJAP.51.061601(Journal) ========================================================== Created: 2023-02-01 12:33:45 ConfID: 6715741 CauseID: 1560038407 OtherID: 1363320521 JT: Japanese Journal of Applied Physics MD: Morikawa,51,3r,31201,2012,Characterization of In20Ge15Sb10Te55 Phase Change Material for Phase Change Memory with Low Power Operation and Good Data Retention DOI: 10.1143/JJAP.51.031201(Journal) (6715741-N) DOI: 10.7567/JJAP.51.031201(Journal) ========================================================== Created: 2023-02-01 12:33:43 ConfID: 6715738 CauseID: 1560038399 OtherID: 1363320268 JT: Japanese Journal of Applied Physics MD: Cao,51,2r,22503,2012,Non-Harmonic Analysis Applied to Optical Coherence Tomography Imaging DOI: 10.1143/JJAP.51.022503(Journal) (6715738-N) DOI: 10.7567/JJAP.51.022503(Journal) ========================================================== Created: 2023-02-01 12:33:48 ConfID: 6715739 CauseID: 1560038403 OtherID: 1363320859 JT: Japanese Journal of Applied Physics MD: Yamamoto,51,6r,60001,2012,Technological Innovation of Thin-Film Transistors: Technology Development, History, and Future DOI: 10.1143/JJAP.51.060001(Journal) (6715739-N) DOI: 10.7567/JJAP.51.060001(Journal) ========================================================== Created: 2023-02-01 12:33:40 ConfID: 6715736 CauseID: 1560038392 OtherID: 1363320815 JT: Japanese Journal of Applied Physics MD: Hattori,51,5r,55801,2012,Three-Dimensional Reciprocal-Lattice Analysis Using Azimuth-Scan Reflection High-Energy Electron Diffraction: Determination of Complex Crystal Orientations of Al Grains on Si(111) Surface DOI: 10.1143/JJAP.51.055801(Journal) (6715736-N) DOI: 10.7567/JJAP.51.055801(Journal) ========================================================== Created: 2023-02-01 12:33:42 ConfID: 6715737 CauseID: 1560038395 OtherID: 1363320288 JT: Japanese Journal of Applied Physics MD: Jia,51,2r,22703,2012,Experimental and Numerical Study of Mode Transformation and Energy Attenuation of Wedge Waves Generated by Laser Ultrasound Technique DOI: 10.1143/JJAP.51.022703(Journal) (6715737-N) DOI: 10.7567/JJAP.51.022703(Journal) ========================================================== Created: 2023-02-01 12:32:08 ConfID: 6715686 CauseID: 1560038075 OtherID: 1363320586 JT: Japanese Journal of Applied Physics MD: Masumoto,51,4r,40203,2012,The Effects of Ba-Additive on Growth of a-Plane GaN Single Crystals Using Na Flux Method DOI: 10.1143/JJAP.51.040203(Journal) (6715686-N) DOI: 10.7567/JJAP.51.040203(Journal) ========================================================== Created: 2023-02-01 12:32:19 ConfID: 6715687 CauseID: 1560038107 OtherID: 1363320631 JT: Japanese Journal of Applied Physics MD: Dahmani,51,4r,43002,2012,Effect of Seed Layer on Room Temperature Tunnel Magnetoresistance of MgO Barriers Formed by Radical Oxidation in IrMn-Based Magnetic Tunnel Junctions DOI: 10.1143/JJAP.51.043002(Journal) (6715687-N) DOI: 10.7567/JJAP.51.043002(Journal) ========================================================== Created: 2023-02-01 12:32:01 ConfID: 6715684 CauseID: 1560038052 OtherID: 1363320618 JT: Japanese Journal of Applied Physics MD: Lee,51,4r,42201,2012,Low-Loss GaInAsP Wire Waveguide on Si Substrate with Benzocyclobutene Adhesive Wafer Bonding for Membrane Photonic Circuits DOI: 10.1143/JJAP.51.042201(Journal) (6715684-N) DOI: 10.7567/JJAP.51.042201(Journal) ========================================================== Created: 2023-02-01 12:32:07 ConfID: 6715685 CauseID: 1560038073 OtherID: 1363320654 JT: Japanese Journal of Applied Physics MD: Okamoto,51,4r,46501,2012,Improvement of Removal Rate in Abrasive-Free Planarization of 4H-SiC Substrates Using Catalytic Platinum and Hydrofluoric Acid DOI: 10.1143/JJAP.51.046501(Journal) (6715685-N) DOI: 10.7567/JJAP.51.046501(Journal) ========================================================== Created: 2023-02-01 12:31:50 ConfID: 6715682 CauseID: 1560037991 OtherID: 1363320555 JT: Japanese Journal of Applied Physics MD: Tasaki,51,3r,35802,2012,Thermophysical Properties of Transparent Conductive Nb-Doped TiO2 Films DOI: 10.1143/JJAP.51.035802(Journal) (6715682-N) DOI: 10.7567/JJAP.51.035802(Journal) ========================================================== Created: 2023-02-01 12:31:55 ConfID: 6715683 CauseID: 1560038011 OtherID: 1363320626 JT: Japanese Journal of Applied Physics MD: Kameda,51,4r,42202,2012,Effective Medium Theory for Calculating Reflectance from Metal–Dielectric Multilayered Structure DOI: 10.1143/JJAP.51.042202(Journal) (6715683-N) DOI: 10.7567/JJAP.51.042202(Journal) ========================================================== Created: 2023-02-01 12:31:49 ConfID: 6715680 CauseID: 1560037971 OtherID: 1363320609 JT: Japanese Journal of Applied Physics MD: Liu,51,4r,40213,2012,Ultrathin Reflective Flexible Liquid Crystal Display Film DOI: 10.1143/JJAP.51.040213(Journal) (6715680-N) DOI: 10.7567/JJAP.51.040213(Journal) ========================================================== Created: 2023-02-01 12:31:49 ConfID: 6715681 CauseID: 1560037972 OtherID: 1363320561 JT: Japanese Journal of Applied Physics MD: Kuan,51,3r,35801,2012,Influence of Lithium and Potassium Doping on Structure and Electrical Characteristics of Lix(KyNa1-y)1-x(Nb0.9Ta0.06Sb0.04)O3 Lead-Free Piezoelectric Ceramics DOI: 10.1143/JJAP.51.035801(Journal) (6715681-N) DOI: 10.7567/JJAP.51.035801(Journal) ========================================================== Created: 2023-02-01 12:32:30 ConfID: 6715694 CauseID: 1560038152 OtherID: 1363320633 JT: Japanese Journal of Applied Physics MD: Chen,51,4r,45503,2012,Investigation of Optical and Electrochromic Properties of Tungsten Oxide Deposited with Horizontal DC and DC Pulse Magnetron Sputtering DOI: 10.1143/JJAP.51.045503(Journal) (6715694-N) DOI: 10.7567/JJAP.51.045503(Journal) ========================================================== Created: 2023-02-01 12:32:42 ConfID: 6715695 CauseID: 1560038185 OtherID: 1363320611 JT: Japanese Journal of Applied Physics MD: Kabe,51,4r,41104,2012,Oxidation of Silicon Utilizing a Microwave Plasma System: Electric-Stress Hardening of SiO2 Films by Controlling the Surface and Interface Roughness DOI: 10.1143/JJAP.51.041104(Journal) (6715695-N) DOI: 10.7567/JJAP.51.041104(Journal) ========================================================== Created: 2023-02-01 12:32:28 ConfID: 6715692 CauseID: 1560038146 OtherID: 1363320632 JT: Japanese Journal of Applied Physics MD: Toyoda,51,4r,45202,2012,Theoretical Investigation of Chemical Spin Doping into Single Porphyrin Junctions toward Ultrahigh-Sensitive Nitric Oxide Sensor DOI: 10.1143/JJAP.51.045202(Journal) (6715692-N) DOI: 10.7567/JJAP.51.045202(Journal) ========================================================== Created: 2023-02-01 12:32:34 ConfID: 6715693 CauseID: 1560038151 OtherID: 1363320646 JT: Japanese Journal of Applied Physics MD: Kao,51,4r,45502,2012,Growth of Epitaxial Anatase TiO2(001) Thin Film on NaCl(001) Substrate by Ion Beam Sputtering and Thermal Annealing DOI: 10.1143/JJAP.51.045502(Journal) (6715693-N) DOI: 10.7567/JJAP.51.045502(Journal) ========================================================== Created: 2023-02-01 12:32:22 ConfID: 6715690 CauseID: 1560038132 OtherID: 1363320623 JT: Japanese Journal of Applied Physics MD: Mizuno,51,4r,42302,2012,Light Trapping by Ag Nanoparticles Chemically Assembled inside Thin-Film Hydrogenated Microcrystalline Si Solar Cells DOI: 10.1143/JJAP.51.042302(Journal) (6715690-N) DOI: 10.7567/JJAP.51.042302(Journal) ========================================================== Created: 2023-02-01 12:32:28 ConfID: 6715691 CauseID: 1560038139 OtherID: 1363320629 JT: Japanese Journal of Applied Physics MD: Ito,51,4r,44104,2012,Fundamental Properties of Novel Design Microstrip Line Type of Liquid Crystal Phase Shifter in Microwave Region DOI: 10.1143/JJAP.51.044104(Journal) (6715691-N) DOI: 10.7567/JJAP.51.044104(Journal) ========================================================== Created: 2023-02-01 12:32:15 ConfID: 6715688 CauseID: 1560038108 OtherID: 1363320628 JT: Japanese Journal of Applied Physics MD: Arakawa,51,4r,42203,2012,Low-Voltage Mach–Zehnder Modulator with InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well DOI: 10.1143/JJAP.51.042203(Journal) (6715688-N) DOI: 10.7567/JJAP.51.042203(Journal) ========================================================== Created: 2023-02-01 12:32:21 ConfID: 6715689 CauseID: 1560038131 OtherID: 1363320639 JT: Japanese Journal of Applied Physics MD: Shimada,51,4r,44106,2012,Effects of Electrospun TiO2 Nanowires Mixed in Nanoparticle-Based Electrode for Dye-Sensitized Solar Cells DOI: 10.1143/JJAP.51.044106(Journal) (6715689-N) DOI: 10.7567/JJAP.51.044106(Journal) ========================================================== Created: 2023-02-01 12:32:59 ConfID: 6715702 CauseID: 1560038242 OtherID: 1363320286 JT: Japanese Journal of Applied Physics MD: Umemura,51,2r,22702,2012,Subharmonic Synchronization of Picosecond Yb Fiber Laser to Picosecond Ti:Sapphire Laser for Stimulated Raman Scattering Microscopy DOI: 10.1143/JJAP.51.022702(Journal) (6715702-N) DOI: 10.7567/JJAP.51.022702(Journal) ========================================================== Created: 2023-02-01 12:32:59 ConfID: 6715703 CauseID: 1560038243 OtherID: 1363320267 JT: Japanese Journal of Applied Physics MD: Smirnov,51,2r,22301,2012,Variation in Absorber Layer Defect Density in Amorphous and Microcrystalline Silicon Thin Film Solar Cells with 2 MeV Electron Bombardment DOI: 10.1143/JJAP.51.022301(Journal) (6715703-N) DOI: 10.7567/JJAP.51.022301(Journal) ========================================================== Created: 2023-02-01 12:32:53 ConfID: 6715700 CauseID: 1560038219 OtherID: 1363320658 JT: Japanese Journal of Applied Physics MD: Okamoto,51,4r,46504,2012,Fabrication and Electrical Properties of Thermally Oxidized p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on 4H-SiC C-Face DOI: 10.1143/JJAP.51.046504(Journal) (6715700-N) DOI: 10.7567/JJAP.51.046504(Journal) ========================================================== Created: 2023-02-01 12:32:58 ConfID: 6715701 CauseID: 1560038241 OtherID: 1363320659 JT: Japanese Journal of Applied Physics MD: Miyamoto,51,4r,46701,2012,A New Collinear-Type Energy-Filtered X-ray Photoemission Electron Microscope Equipped with a Multi-Pole Aberration-Corrected Air-Core Coil Wien Filter DOI: 10.1143/JJAP.51.046701(Journal) (6715701-N) DOI: 10.7567/JJAP.51.046701(Journal) ========================================================== Created: 2023-02-01 12:32:48 ConfID: 6715698 CauseID: 1560038206 OtherID: 1363320617 JT: Japanese Journal of Applied Physics MD: Nakata,51,4r,44105,2012,Analysis of the Influence of Sputtering Damage to Polymer Gate Insulators in Amorphous InGaZnO4 Thin-Film Transistors DOI: 10.1143/JJAP.51.044105(Journal) (6715698-N) DOI: 10.7567/JJAP.51.044105(Journal) ========================================================== Created: 2023-02-01 12:32:48 ConfID: 6715699 CauseID: 1560038207 OtherID: 1363320644 JT: Japanese Journal of Applied Physics MD: Nakano,51,4r,45102,2012,Dielectrophoretic Assembly of Semiconducting Carbon Nanotubes Separated and Enriched by Spin Column Chromatography and Its Application to Gas Sensing DOI: 10.1143/JJAP.51.045102(Journal) (6715699-N) DOI: 10.7567/JJAP.51.045102(Journal) ========================================================== Created: 2023-02-01 12:32:42 ConfID: 6715696 CauseID: 1560038187 OtherID: 1363320256 JT: Japanese Journal of Applied Physics MD: Choi,51,2r,21401,2012,Effect of Dynamic Bias Stress in Short-Channel (L=1.5 µm) p-Type Polycrystalline Silicon Thin-Film Transistors DOI: 10.1143/JJAP.51.021401(Journal) (6715696-N) DOI: 10.7567/JJAP.51.021401(Journal) ========================================================== Created: 2023-02-01 12:32:43 ConfID: 6715697 CauseID: 1560038189 OtherID: 1363320657 JT: Japanese Journal of Applied Physics MD: Saari,51,4r,46601,2012,Development of a Compact Moving-Sample Magnetometer Using High-Tc Superconducting Quantum Interference Device DOI: 10.1143/JJAP.51.046601(Journal) (6715697-N) DOI: 10.7567/JJAP.51.046601(Journal) ========================================================== Created: 2023-02-01 12:33:05 ConfID: 6715710 CauseID: 1560038278 OtherID: 1363320270 JT: Japanese Journal of Applied Physics MD: Lee,51,2r,21402,2012,Extraction of Electron Band Mobility in Amorphous Silicon Thin-Film Transistors DOI: 10.1143/JJAP.51.021402(Journal) (6715710-N) DOI: 10.7567/JJAP.51.021402(Journal) ========================================================== Created: 2023-02-01 12:33:06 ConfID: 6715711 CauseID: 1560038279 OtherID: 1363320278 JT: Japanese Journal of Applied Physics MD: Nishioka,51,2r,21601,2012,Surface Relief Formation in Azobenzene-Containing Polymers Using 325 nm Holography DOI: 10.1143/JJAP.51.021601(Journal) (6715711-N) DOI: 10.7567/JJAP.51.021601(Journal) ========================================================== Created: 2023-02-01 12:33:04 ConfID: 6715708 CauseID: 1560038266 OtherID: 1363320648 JT: Japanese Journal of Applied Physics MD: Ishida,51,4r,47001,2012,Observation of Fine Lung Structure by Ultrahigh-Resolution Optical Coherence Tomography Using 800, 1060, and 1300 nm Supercontinua DOI: 10.1143/JJAP.51.047001(Journal) (6715708-N) DOI: 10.7567/JJAP.51.047001(Journal) ========================================================== Created: 2023-02-01 12:33:05 ConfID: 6715709 CauseID: 1560038276 OtherID: 1363320296 JT: Japanese Journal of Applied Physics MD: Ieda,51,2r,22603,2012,Optical Characteristic Improvement of Neodymium-Doped Lanthanum Fluoride Thin Films Grown by Pulsed Laser Deposition for Vacuum Ultraviolet Application DOI: 10.1143/JJAP.51.022603(Journal) (6715709-N) DOI: 10.7567/JJAP.51.022603(Journal) ========================================================== Created: 2023-02-01 12:33:02 ConfID: 6715706 CauseID: 1560038261 OtherID: 1363320254 JT: Japanese Journal of Applied Physics MD: Gu,51,2r,20206,2012,Electro-Thermal Beam Steering Using Bragg Reflector Waveguide Amplifier DOI: 10.1143/JJAP.51.020206(Journal) (6715706-N) DOI: 10.7567/JJAP.51.020206(Journal) ========================================================== Created: 2023-02-01 12:33:03 ConfID: 6715707 CauseID: 1560038263 OtherID: 1363320783 JT: Japanese Journal of Applied Physics MD: Koketsu,51,5r,51201,2012,Shape Control of Trenched 4H-SiC C-Face by Thermal Chlorine Etching DOI: 10.1143/JJAP.51.051201(Journal) (6715707-N) DOI: 10.7567/JJAP.51.051201(Journal) ========================================================== Created: 2023-02-01 12:32:57 ConfID: 6715704 CauseID: 1560038247 OtherID: 1363320870 JT: Japanese Journal of Applied Physics MD: Miyake,51,6r,63002,2012,Modification of Magnetic Nanocontact Structure by a Bias-Voltage-Induced Stress and Its Influence on Magnetoresistance Effect in TaOx Nano-Oxide Layer Spin Valve DOI: 10.1143/JJAP.51.063002(Journal) (6715704-N) DOI: 10.7567/JJAP.51.063002(Journal) ========================================================== Created: 2023-02-01 12:32:57 ConfID: 6715705 CauseID: 1560038248 OtherID: 1363320596 JT: Japanese Journal of Applied Physics MD: Endo,51,4r,40001,2012,Carbon Nanotube Research: Past and Future DOI: 10.1143/JJAP.51.040001(Journal) (6715705-N) DOI: 10.7567/JJAP.51.040001(Journal) ========================================================== Created: 2023-02-01 12:30:56 ConfID: 6715654 CauseID: 1560037752 OtherID: 1363320334 JT: Japanese Journal of Applied Physics MD: He,51,2r,26001,2012,Numerical Simulation of Direct Current Glow Discharge in Air with Experimental Validation DOI: 10.1143/JJAP.51.026001(Journal) (6715654-N) DOI: 10.7567/JJAP.51.026001(Journal) ========================================================== Created: 2023-02-01 12:31:02 ConfID: 6715655 CauseID: 1560037777 OtherID: 1363320292 JT: Japanese Journal of Applied Physics MD: Han,51,2r,24104,2012,High-Performance Semitransparent Bulk-Heterojunction Organic Photovoltaics with Ag Interfacial Layer DOI: 10.1143/JJAP.51.024104(Journal) (6715655-N) DOI: 10.7567/JJAP.51.024104(Journal) ========================================================== Created: 2023-02-01 12:30:44 ConfID: 6715652 CauseID: 1560037675 OtherID: 1363320306 JT: Japanese Journal of Applied Physics MD: Hsiao,51,2r,25505,2012,Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates DOI: 10.1143/JJAP.51.025505(Journal) (6715652-N) DOI: 10.7567/JJAP.51.025505(Journal) ========================================================== Created: 2023-02-01 12:30:55 ConfID: 6715653 CauseID: 1560037751 OtherID: 1363320514 JT: Japanese Journal of Applied Physics MD: Lee,51,3r,31102,2012,In-situ X-ray Photoemission Spectroscopy Study of Atomic Layer Deposition of TiO2 on Silicon Substrate DOI: 10.1143/JJAP.51.031102(Journal) (6715653-N) DOI: 10.7567/JJAP.51.031102(Journal) ========================================================== Created: 2023-02-01 12:30:45 ConfID: 6715650 CauseID: 1560037699 OtherID: 1363320293 JT: Japanese Journal of Applied Physics MD: Uchida,51,2r,22601,2012,Improving the Laser-Induced-Damage Tolerance Characteristics of 4-Dimethylamino-N-methyl-4-stilbazoliumtosylate Crystals for THz Wave Generation by Annealing DOI: 10.1143/JJAP.51.022601(Journal) (6715650-N) DOI: 10.7567/JJAP.51.022601(Journal) ========================================================== Created: 2023-02-01 12:30:48 ConfID: 6715651 CauseID: 1560037703 OtherID: 1363320315 JT: Japanese Journal of Applied Physics MD: Yokoyama,51,2r,25601,2012,Reduction of In Composition in Heavily Zn-Doped InAlGaAs Layers Grown at Low Temperature by Metalorganic Chemical Vapor Deposition DOI: 10.1143/JJAP.51.025601(Journal) (6715651-N) DOI: 10.7567/JJAP.51.025601(Journal) ========================================================== Created: 2023-02-01 12:30:35 ConfID: 6715648 CauseID: 1560037651 OtherID: 1363320275 JT: Japanese Journal of Applied Physics MD: Kim,51,2r,22001,2012,Universal Expression of the Optical Power Dissipation in Multilayer Structures with Complex Permittivity and Permeability DOI: 10.1143/JJAP.51.022001(Journal) (6715648-N) DOI: 10.7567/JJAP.51.022001(Journal) ========================================================== Created: 2023-02-01 12:30:43 ConfID: 6715649 CauseID: 1560037673 OtherID: 1363320519 JT: Japanese Journal of Applied Physics MD: Yokoyama,51,3r,32102,2012,Enhancing the Efficiency and Contrast Ratio of White Organic Light-Emitting Diode Using Energy-Recyclable Photovoltaic Cells DOI: 10.1143/JJAP.51.032102(Journal) (6715649-N) DOI: 10.7567/JJAP.51.032102(Journal) ========================================================== Created: 2023-02-01 12:31:12 ConfID: 6715662 CauseID: 1560037825 OtherID: 1363321735 JT: Japanese Journal of Applied Physics MD: Sasaki,51,3r,30206,2012,Hydrodynamic Cell Pairing and Cell Fusion through a Microslit on a Microfluidic Device DOI: 10.1143/JJAP.51.030206(Journal) (6715662-N) DOI: 10.7567/JJAP.51.030206(Journal) ========================================================== Created: 2023-02-01 12:31:14 ConfID: 6715663 CauseID: 1560037830 OtherID: 1363320509 JT: Japanese Journal of Applied Physics MD: Tada,51,3r,30205,2012,Preparation of Bulk Heterojunction Composite Consisting of Poly(3-hexylthiophene) and Neat C70 Using Halogen-Free Solvent DOI: 10.1143/JJAP.51.030205(Journal) (6715663-N) DOI: 10.7567/JJAP.51.030205(Journal) ========================================================== Created: 2023-02-01 12:31:10 ConfID: 6715660 CauseID: 1560037822 OtherID: 1363320341 JT: Japanese Journal of Applied Physics MD: Habuka,51,2r,26701,2012,Silicon Epitaxial Growth Rate and Transport Phenomena in a Vertical Stacked-Type Multi-Wafer Reactor DOI: 10.1143/JJAP.51.026701(Journal) (6715660-N) DOI: 10.7567/JJAP.51.026701(Journal) ========================================================== Created: 2023-02-01 12:31:12 ConfID: 6715661 CauseID: 1560037824 OtherID: 1363320342 JT: Japanese Journal of Applied Physics MD: Liu,51,2r,26601,2012,Frequency and Temperature Characteristics of an Ultrasonic Method for Measuring the Specific Gravity of Lead-Acid Battery Electrolyte DOI: 10.1143/JJAP.51.026601(Journal) (6715661-N) DOI: 10.7567/JJAP.51.026601(Journal) ========================================================== Created: 2023-02-01 12:31:08 ConfID: 6715658 CauseID: 1560037803 OtherID: 1363320343 JT: Japanese Journal of Applied Physics MD: Takenaga,51,2r,27001,2012,Label-Free Acetylcholine Image Sensor Based on Charge Transfer Technology for Biological Phenomenon Tracking DOI: 10.1143/JJAP.51.027001(Journal) (6715658-N) DOI: 10.7567/JJAP.51.027001(Journal) ========================================================== Created: 2023-02-01 12:31:10 ConfID: 6715659 CauseID: 1560037820 OtherID: 1363320291 JT: Japanese Journal of Applied Physics MD: Hsu,51,2r,22605,2012,Evidence of Nitrogen Reorganization in GaAsSbN Alloys DOI: 10.1143/JJAP.51.022605(Journal) (6715659-N) DOI: 10.7567/JJAP.51.022605(Journal) ========================================================== Created: 2023-02-01 12:31:03 ConfID: 6715656 CauseID: 1560037779 OtherID: 1363320516 JT: Japanese Journal of Applied Physics MD: Jao,51,3r,32201,2012,Surface Morphological Effects on Subwavelength Filter of Nanoscale Grating for Near Infrared Biosensing DOI: 10.1143/JJAP.51.032201(Journal) (6715656-N) DOI: 10.7567/JJAP.51.032201(Journal) ========================================================== Created: 2023-02-01 12:31:06 ConfID: 6715657 CauseID: 1560037800 OtherID: 1363320374 JT: Japanese Journal of Applied Physics MD: Sakai,51,2r,28004,2012,Current-Induced Magnetization Switching in Fe3Si/FeSi2 Artificial Lattices DOI: 10.1143/JJAP.51.028004(Journal) (6715657-N) DOI: 10.7567/JJAP.51.028004(Journal) ========================================================== Created: 2023-02-01 12:31:32 ConfID: 6715670 CauseID: 1560037901 OtherID: 1363320634 JT: Japanese Journal of Applied Physics MD: Park,51,4r,45101,2012,Comparison of Chemical Vapor Sensing Properties between Graphene and Carbon Nanotubes DOI: 10.1143/JJAP.51.045101(Journal) (6715670-N) DOI: 10.7567/JJAP.51.045101(Journal) ========================================================== Created: 2023-02-01 12:31:32 ConfID: 6715671 CauseID: 1560037902 OtherID: 1363320619 JT: Japanese Journal of Applied Physics MD: Hirata,51,4r,41604,2012,Improved Device Lifetime of Organic Light Emitting Diodes with an Electrochemically Stable π-Conjugated Liquid Host in the Liquid Emitting Layer DOI: 10.1143/JJAP.51.041604(Journal) (6715671-N) DOI: 10.7567/JJAP.51.041604(Journal) ========================================================== Created: 2023-02-01 12:31:30 ConfID: 6715668 CauseID: 1560037896 OtherID: 1363320578 JT: Japanese Journal of Applied Physics MD: Wang,51,3r,37002,2012,Using a Microfluidic–Microelectric Device to Directly Separate Serum/Blood Cells from a Continuous Whole Bloodstream Flow DOI: 10.1143/JJAP.51.037002(Journal) (6715668-N) DOI: 10.7567/JJAP.51.037002(Journal) ========================================================== Created: 2023-02-01 12:31:30 ConfID: 6715669 CauseID: 1560037898 OtherID: 1363320606 JT: Japanese Journal of Applied Physics MD: Wu,51,4r,40211,2012,A Compact 2 Degree-of-Freedom Energy Harvester with Cut-Out Cantilever Beam DOI: 10.1143/JJAP.51.040211(Journal) (6715669-N) DOI: 10.7567/JJAP.51.040211(Journal) ========================================================== Created: 2023-02-01 12:31:22 ConfID: 6715666 CauseID: 1560037865 OtherID: 1363320554 JT: Japanese Journal of Applied Physics MD: Xiao,51,3r,35601,2012,Nucleation and Crystal Growth of Si1-xGex Melts during Rapid Cooling Processes: A Molecular-Dynamics Study DOI: 10.1143/JJAP.51.035601(Journal) (6715666-N) DOI: 10.7567/JJAP.51.035601(Journal) ========================================================== Created: 2023-02-01 12:31:23 ConfID: 6715667 CauseID: 1560037868 OtherID: 1363320553 JT: Japanese Journal of Applied Physics MD: Abe,51,3r,35603,2012,Defect Propagation from 3C-SiC Intermediate Layers to III–Nitride Epilayers DOI: 10.1143/JJAP.51.035603(Journal) (6715667-N) DOI: 10.7567/JJAP.51.035603(Journal) ========================================================== Created: 2023-02-01 12:31:24 ConfID: 6715664 CauseID: 1560037860 OtherID: 1363320627 JT: Japanese Journal of Applied Physics MD: Nakanishi,51,4r,41701,2012,Relationship between Concentration of Initiator and Image-Sticking Phenomenon of Polymer-Sustained-Alignment Liquid Crystal Displays DOI: 10.1143/JJAP.51.041701(Journal) (6715664-N) DOI: 10.7567/JJAP.51.041701(Journal) ========================================================== Created: 2023-02-01 12:31:20 ConfID: 6715665 CauseID: 1560037862 OtherID: 1363320542 JT: Japanese Journal of Applied Physics MD: Masumoto,51,3r,35501,2012,The Effects of Substrate Surface Treatments on Growth of a-Plane GaN Single Crystals Using Na Flux Method DOI: 10.1143/JJAP.51.035501(Journal) (6715665-N) DOI: 10.7567/JJAP.51.035501(Journal) ========================================================== Created: 2023-02-01 12:31:41 ConfID: 6715678 CauseID: 1560037947 OtherID: 1363320558 JT: Japanese Journal of Applied Physics MD: Ando,51,3r,36201,2012,Extracellular Matrix Patterning for Cell Alignment by Atmospheric Pressure Plasma Jets DOI: 10.1143/JJAP.51.036201(Journal) (6715678-N) DOI: 10.7567/JJAP.51.036201(Journal) ========================================================== Created: 2023-02-01 12:31:44 ConfID: 6715679 CauseID: 1560037953 OtherID: 1363320589 JT: Japanese Journal of Applied Physics MD: Yoo,51,4r,40201,2012,Low-Temperature, Solution-Processed Zinc Tin Oxide Thin-Film Transistors Fabricated by Thermal Annealing and Microwave Irradiation DOI: 10.1143/JJAP.51.040201(Journal) (6715679-N) DOI: 10.7567/JJAP.51.040201(Journal) ========================================================== Created: 2023-02-01 12:31:39 ConfID: 6715676 CauseID: 1560037927 OtherID: 1363320529 JT: Japanese Journal of Applied Physics MD: Li,51,3r,35201,2012,Force Mapping of the NaCl(100)/Cu(111) Surface by Atomic Force Microscopy at 78 K DOI: 10.1143/JJAP.51.035201(Journal) (6715676-N) DOI: 10.7567/JJAP.51.035201(Journal) ========================================================== Created: 2023-02-01 12:31:41 ConfID: 6715677 CauseID: 1560037946 OtherID: 1363320537 JT: Japanese Journal of Applied Physics MD: Bouzid,51,3r,34401,2012,Near Infrared Single Photon Detector Using an InGaAs/InP Avalanche Photodiode Operated with a Bipolar Gating Signal DOI: 10.1143/JJAP.51.034401(Journal) (6715677-N) DOI: 10.7567/JJAP.51.034401(Journal) ========================================================== Created: 2023-02-01 12:31:35 ConfID: 6715674 CauseID: 1560037914 OtherID: 1363320595 JT: Japanese Journal of Applied Physics MD: Sakai,51,4r,40210,2012,Organic Field-Effect-Transistor-Based Memory with Nylon 11 as Gate Dielectric DOI: 10.1143/JJAP.51.040210(Journal) (6715674-N) DOI: 10.7567/JJAP.51.040210(Journal) ========================================================== Created: 2023-02-01 12:31:37 ConfID: 6715675 CauseID: 1560037920 OtherID: 1363320557 JT: Japanese Journal of Applied Physics MD: Zhu,51,3r,35505,2012,Optimized Process of Mn2+-Doped Ba0.5Sr0.5TiO3 Thin Films on Platinum Coated Sapphire Substrates DOI: 10.1143/JJAP.51.035505(Journal) (6715675-N) DOI: 10.7567/JJAP.51.035505(Journal) ========================================================== Created: 2023-02-01 12:31:34 ConfID: 6715672 CauseID: 1560037905 OtherID: 1363320523 JT: Japanese Journal of Applied Physics MD: Tanaka,51,3r,32601,2012,Electrooptic Properties of Submonolayer Polydiacetylene Nanoparticle Film Probed by Surface Plasmon Resonance Spectroscopy DOI: 10.1143/JJAP.51.032601(Journal) (6715672-N) DOI: 10.7567/JJAP.51.032601(Journal) ========================================================== Created: 2023-02-01 12:31:35 ConfID: 6715673 CauseID: 1560037916 OtherID: 1363320549 JT: Japanese Journal of Applied Physics MD: Kawaharamura,51,3r,36503,2012,Development and Research on the Mechanism of Novel Mist Etching Method for Oxide Thin Films DOI: 10.1143/JJAP.51.036503(Journal) (6715673-N) DOI: 10.7567/JJAP.51.036503(Journal) ========================================================== Created: 2023-02-01 12:36:34 ConfID: 6715878 CauseID: 1560038870 OtherID: 1363321420 JT: Japanese Journal of Applied Physics MD: Shiratori,51,9r,95803,2012,Nanoscale Roughness Control of Electron Transport Layer in Organic Solar Cells Fabricated by Sol–Gel Method DOI: 10.1143/JJAP.51.095803(Journal) (6715878-N) DOI: 10.7567/JJAP.51.095803(Journal) ========================================================== Created: 2023-02-01 12:36:27 ConfID: 6715879 CauseID: 1560038858 OtherID: 1363321385 JT: Japanese Journal of Applied Physics MD: Yoshimoto,51,9r,90129,2012,Human Umbilical Vein Endothelial Cell Interaction with Fluorine-Incorporated Amorphous Carbon Films DOI: 10.1143/JJAP.51.090129(Journal) (6715879-N) DOI: 10.7567/JJAP.51.090129(Journal) ========================================================== Created: 2023-02-01 12:36:26 ConfID: 6715876 CauseID: 1560038856 OtherID: 1363320552 JT: Japanese Journal of Applied Physics MD: Trung,51,3r,37001,2012,Propitious Immobilization of Gold Nanoparticles on Poly(dimethylsiloxane) Substrate for Local Surface Plasmon Resonance Based Biosensor DOI: 10.1143/JJAP.51.037001(Journal) (6715876-N) DOI: 10.7567/JJAP.51.037001(Journal) ========================================================== Created: 2023-02-01 12:36:29 ConfID: 6715877 CauseID: 1560038865 OtherID: 1363320600 JT: Japanese Journal of Applied Physics MD: Liu,51,4r,41101,2012,Transient Current of Resistive Switching of a NiOx Resistive Memory DOI: 10.1143/JJAP.51.041101(Journal) (6715877-N) DOI: 10.7567/JJAP.51.041101(Journal) ========================================================== Created: 2023-02-01 12:36:20 ConfID: 6715874 CauseID: 1560038838 OtherID: 1363320304 JT: Japanese Journal of Applied Physics MD: Hyung,51,2r,25702,2012,Improved Performance of Pentacene Thin-Film Transistors with Al2O3 Gate Dielectric: Annealing Effect on the Surface Properties DOI: 10.1143/JJAP.51.025702(Journal) (6715874-N) DOI: 10.7567/JJAP.51.025702(Journal) ========================================================== Created: 2023-02-01 12:36:26 ConfID: 6715875 CauseID: 1560038854 OtherID: 1363320543 JT: Japanese Journal of Applied Physics MD: Gwag,51,3r,34102,2012,Anchoring Competition on Nanosurface Boundaries with Conflicting Mixed Nematic Anchoring Properties DOI: 10.1143/JJAP.51.034102(Journal) (6715875-N) DOI: 10.7567/JJAP.51.034102(Journal) ========================================================== Created: 2023-02-01 12:36:24 ConfID: 6715872 CauseID: 1560038846 OtherID: 1363320645 JT: Japanese Journal of Applied Physics MD: Kim,51,4r,45701,2012,Characterization of Interfaces between HfO2 Thin Film and Metal Electrode with Pre–Post Treatments DOI: 10.1143/JJAP.51.045701(Journal) (6715872-N) DOI: 10.7567/JJAP.51.045701(Journal) ========================================================== Created: 2023-02-01 12:36:24 ConfID: 6715873 CauseID: 1560038847 OtherID: 1363320540 JT: Japanese Journal of Applied Physics MD: Wang,51,3r,33001,2012,Signal Enhancement at Small Gap Length in Giant Magnetoresistance Differential Response DOI: 10.1143/JJAP.51.033001(Journal) (6715873-N) DOI: 10.7567/JJAP.51.033001(Journal) ========================================================== Created: 2023-02-01 12:36:42 ConfID: 6715886 CauseID: 1560038902 OtherID: 1363320370 JT: Japanese Journal of Applied Physics MD: Kato,51,2r,28006,2012,Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation DOI: 10.1143/JJAP.51.028006(Journal) (6715886-N) DOI: 10.7567/JJAP.51.028006(Journal) ========================================================== Created: 2023-02-01 12:36:40 ConfID: 6715887 CauseID: 1560038901 OtherID: 1363321396 JT: Japanese Journal of Applied Physics MD: Odaka,51,9r,91301,2012,Density Profile of Thermal Oxide Thin Films on Si(100) DOI: 10.1143/JJAP.51.091301(Journal) (6715887-N) DOI: 10.7567/JJAP.51.091301(Journal) ========================================================== Created: 2023-02-01 12:36:37 ConfID: 6715884 CauseID: 1560038889 OtherID: 1363320656 JT: Japanese Journal of Applied Physics MD: Marumoto,51,4r,46505,2012,Theoretical Analysis on Mechanical Deformation of Membrane-Based Photomask Blanks DOI: 10.1143/JJAP.51.046505(Journal) (6715884-N) DOI: 10.7567/JJAP.51.046505(Journal) ========================================================== Created: 2023-02-01 12:36:39 ConfID: 6715885 CauseID: 1560038892 OtherID: 1363320612 JT: Japanese Journal of Applied Physics MD: Wang,51,4r,41501,2012,Effects of Ba Deficiency on Ion Ordering, Grain Growth, and Microwave Dielectric Properties of Ba1-xZn1/3Nb2/3O3 Ceramics DOI: 10.1143/JJAP.51.041501(Journal) (6715885-N) DOI: 10.7567/JJAP.51.041501(Journal) ========================================================== Created: 2023-02-01 12:36:35 ConfID: 6715882 CauseID: 1560038885 OtherID: 1363320581 JT: Japanese Journal of Applied Physics MD: Kimura,51,4r,40202,2012,Determination of Anisotropic Diamagnetic Susceptibility Using X-ray Diffraction DOI: 10.1143/JJAP.51.040202(Journal) (6715882-N) DOI: 10.7567/JJAP.51.040202(Journal) ========================================================== Created: 2023-02-01 12:36:36 ConfID: 6715883 CauseID: 1560038886 OtherID: 1363320559 JT: Japanese Journal of Applied Physics MD: Kim,51,3r,35602,2012,Transmission Electron Microscopy Microstructure of (K0.5Na0.5)NbO3 Ceramics with CuO Addition DOI: 10.1143/JJAP.51.035602(Journal) (6715883-N) DOI: 10.7567/JJAP.51.035602(Journal) ========================================================== Created: 2023-02-01 12:36:31 ConfID: 6715880 CauseID: 1560038874 OtherID: 1363320562 JT: Japanese Journal of Applied Physics MD: Moeenfard,51,3r,37201,2012,An Analytical Approach to Modeling Static Behavior of Torsional Nano-/Micro-actuators under Effect of van der Waals Force DOI: 10.1143/JJAP.51.037201(Journal) (6715880-N) DOI: 10.7567/JJAP.51.037201(Journal) ========================================================== Created: 2023-02-01 12:36:32 ConfID: 6715881 CauseID: 1560038877 OtherID: 1363320504 JT: Japanese Journal of Applied Physics MD: Iwai,51,3r,30204,2012,Convenient Fabrication of Fine Electrodes for Electric Measurement of Nanofibers by Nanoimprint Lithography DOI: 10.1143/JJAP.51.030204(Journal) (6715881-N) DOI: 10.7567/JJAP.51.030204(Journal) ========================================================== Created: 2023-02-01 12:36:54 ConfID: 6715894 CauseID: 1560038927 OtherID: 1363319955 JT: Japanese Journal of Applied Physics MD: Jian-Jun,51,10r,104301,2012,Conduction Band Model of [110]/(001) Uniaxially Strained Si DOI: 10.1143/JJAP.51.104301(Journal) (6715894-N) DOI: 10.7567/JJAP.51.104301(Journal) ========================================================== Created: 2023-02-01 12:36:52 ConfID: 6715895 CauseID: 1560038934 OtherID: 1363321274 JT: Japanese Journal of Applied Physics MD: Son,51,8r,88004,2012,Fabrication of Vanadium Oxide Thin Films on Fused Quartz Substrates by Metal–Organic Decomposition for Bolometer Detectors DOI: 10.1143/JJAP.51.088004(Journal) (6715895-N) DOI: 10.7567/JJAP.51.088004(Journal) ========================================================== Created: 2023-02-01 12:36:49 ConfID: 6715892 CauseID: 1560038921 OtherID: 1363320796 JT: Japanese Journal of Applied Physics MD: Choi,51,5r,52101,2012,Optical Characterization of Double Peak Behavior in 101̄1 Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substrates DOI: 10.1143/JJAP.51.052101(Journal) (6715892-N) DOI: 10.7567/JJAP.51.052101(Journal) ========================================================== Created: 2023-02-01 12:36:50 ConfID: 6715893 CauseID: 1560038928 OtherID: 1363320564 JT: Japanese Journal of Applied Physics MD: Zhao,51,3r,37301,2012,Iterative Receiver in Time–Frequency Domain for Shallow Water Acoustic Channel DOI: 10.1143/JJAP.51.037301(Journal) (6715893-N) DOI: 10.7567/JJAP.51.037301(Journal) ========================================================== Created: 2023-02-01 12:36:46 ConfID: 6715890 CauseID: 1560038914 OtherID: 1363320641 JT: Japanese Journal of Applied Physics MD: Yamamoto,51,4r,45104,2012,AC Power Consumption of Single-Walled Carbon Nanotube Interconnects: Non-Equilibrium Green's Function Simulation DOI: 10.1143/JJAP.51.045104(Journal) (6715890-N) DOI: 10.7567/JJAP.51.045104(Journal) ========================================================== Created: 2023-02-01 12:36:48 ConfID: 6715891 CauseID: 1560038918 OtherID: 1363320599 JT: Japanese Journal of Applied Physics MD: Cao,51,4r,41503,2012,Dielectric Properties of Y2O3 and Nb2O5 Co-Doped Barium Titanate Ceramics DOI: 10.1143/JJAP.51.041503(Journal) (6715891-N) DOI: 10.7567/JJAP.51.041503(Journal) ========================================================== Created: 2023-02-01 12:36:42 ConfID: 6715888 CauseID: 1560038903 OtherID: 1363320608 JT: Japanese Journal of Applied Physics MD: Cho,51,4r,41601,2012,An Enhanced Operational Stability of Organic Light Emitting Devices with Polymeric Buffer Layer DOI: 10.1143/JJAP.51.041601(Journal) (6715888-N) DOI: 10.7567/JJAP.51.041601(Journal) ========================================================== Created: 2023-02-01 12:36:43 ConfID: 6715889 CauseID: 1560038904 OtherID: 1363320833 JT: Japanese Journal of Applied Physics MD: Tsukui,51,5r,57301,2012,Magnetic Alignment of Magnetically Biaxial Diamagnetic Rods under Rotating Magnetic Fields DOI: 10.1143/JJAP.51.057301(Journal) (6715889-N) DOI: 10.7567/JJAP.51.057301(Journal) ========================================================== Created: 2023-02-01 12:37:03 ConfID: 6715902 CauseID: 1560038963 OtherID: 1363321412 JT: Japanese Journal of Applied Physics MD: Arisawa,51,9r,95804,2012,Direct Observation of Local Shielding Currents in Superconducting Thin Films under Low Magnetic Field by Scanning Superconducting Quantum Interference Device Microscopy DOI: 10.1143/JJAP.51.095804(Journal) (6715902-N) DOI: 10.7567/JJAP.51.095804(Journal) ========================================================== Created: 2023-02-01 12:37:04 ConfID: 6715903 CauseID: 1560038965 OtherID: 1363320826 JT: Japanese Journal of Applied Physics MD: Watanabe,51,5r,56501,2012,Effects of Plasma Processes on the Characteristics of Optical Device Structures Based on GaAs DOI: 10.1143/JJAP.51.056501(Journal) (6715903-N) DOI: 10.7567/JJAP.51.056501(Journal) ========================================================== Created: 2023-02-01 12:36:57 ConfID: 6715900 CauseID: 1560038954 OtherID: 1363321365 JT: Japanese Journal of Applied Physics MD: Tokuda,51,9r,90107,2012,Formation of Step-Free Surfaces on Diamond (111) Mesas by Homoepitaxial Lateral Growth DOI: 10.1143/JJAP.51.090107(Journal) (6715900-N) DOI: 10.7567/JJAP.51.090107(Journal) ========================================================== Created: 2023-02-01 12:37:00 ConfID: 6715901 CauseID: 1560038962 OtherID: 1363320614 JT: Japanese Journal of Applied Physics MD: Takenaka,51,4r,43001,2012,Giant Field-Induced Distortion in Mn3SbN at Room Temperature DOI: 10.1143/JJAP.51.043001(Journal) (6715901-N) DOI: 10.7567/JJAP.51.043001(Journal) ========================================================== Created: 2023-02-01 12:36:56 ConfID: 6715898 CauseID: 1560038952 OtherID: 1363320534 JT: Japanese Journal of Applied Physics MD: Son,51,3r,33002,2012,A Study on the Sensitivity of a Spin Valve with Conetic-Based Free Layers DOI: 10.1143/JJAP.51.033002(Journal) (6715898-N) DOI: 10.7567/JJAP.51.033002(Journal) ========================================================== Created: 2023-02-01 12:36:56 ConfID: 6715899 CauseID: 1560038953 OtherID: 1363320551 JT: Japanese Journal of Applied Physics MD: Satoh,51,3r,35701,2012,Properties of Interface between Organic Hole-Transporting Layer and Indium Tin Oxide Anode Modified by Fluorinated Self-Assembled Monolayer DOI: 10.1143/JJAP.51.035701(Journal) (6715899-N) DOI: 10.7567/JJAP.51.035701(Journal) ========================================================== Created: 2023-02-01 12:36:58 ConfID: 6715896 CauseID: 1560038947 OtherID: 1363321372 JT: Japanese Journal of Applied Physics MD: Xue,51,9r,90124,2012,Electron Cyclotron Resonance-Sputtered Nanocarbon Film Electrode Compared with Diamond-Like Carbon and Glassy Carbon Electrodes as Regards Electrochemical Properties and Biomolecule Adsorption DOI: 10.1143/JJAP.51.090124(Journal) (6715896-N) DOI: 10.7567/JJAP.51.090124(Journal) ========================================================== Created: 2023-02-01 12:36:55 ConfID: 6715897 CauseID: 1560038951 OtherID: 1363320806 JT: Japanese Journal of Applied Physics MD: Watkins,51,5r,52501,2012,Thermo-Optical Tuning of Whispering Gallery Modes in Erbium:Ytterbium Doped Glass Microspheres to Arbitrary Probe Wavelengths DOI: 10.1143/JJAP.51.052501(Journal) (6715897-N) DOI: 10.7567/JJAP.51.052501(Journal) ========================================================== Created: 2023-02-01 12:35:57 ConfID: 6715846 CauseID: 1560038785 OtherID: 1363320522 JT: Japanese Journal of Applied Physics MD: Chen,51,3r,31601,2012,Efficient Biopolymer Blue Organic Light-Emitting Devices with Low Driving Voltage DOI: 10.1143/JJAP.51.031601(Journal) (6715846-N) DOI: 10.7567/JJAP.51.031601(Journal) ========================================================== Created: 2023-02-01 12:35:57 ConfID: 6715847 CauseID: 1560038786 OtherID: 1363320635 JT: Japanese Journal of Applied Physics MD: Gwag,51,4r,45203,2012,Unidirectional Liquid Crystal Pretilt Generation on Asymmetric Nanoscaled Groove Pattern Driven by Atomic Force Microscopic Tip DOI: 10.1143/JJAP.51.045203(Journal) (6715847-N) DOI: 10.7567/JJAP.51.045203(Journal) ========================================================== Created: 2023-02-01 12:35:52 ConfID: 6715844 CauseID: 1560038774 OtherID: 1363320528 JT: Japanese Journal of Applied Physics MD: Corbetta,51,3r,30208,2012,Magnetic Response and Spin Polarization of Bulk Cr Tips for In-Field Spin-Polarized Scanning Tunneling Microscopy DOI: 10.1143/JJAP.51.030208(Journal) (6715844-N) DOI: 10.7567/JJAP.51.030208(Journal) ========================================================== Created: 2023-02-01 12:35:56 ConfID: 6715845 CauseID: 1560038782 OtherID: 1363320550 JT: Japanese Journal of Applied Physics MD: Chen,51,3r,36504,2012,Effect of Electric Potential and Mechanical Force on Copper Electro-Chemical Mechanical Planarization DOI: 10.1143/JJAP.51.036504(Journal) (6715845-N) DOI: 10.7567/JJAP.51.036504(Journal) ========================================================== Created: 2023-02-01 12:35:51 ConfID: 6715842 CauseID: 1560038772 OtherID: 1363321273 JT: Japanese Journal of Applied Physics MD: Wu,51,8r,86601,2012,Two-Dimensional Distributions of Five Cell Parameters of Twisted Nematic Liquid Crystal Device by Numerical Photometric Ellipsometer DOI: 10.1143/JJAP.51.086601(Journal) (6715842-N) DOI: 10.7567/JJAP.51.086601(Journal) ========================================================== Created: 2023-02-01 12:35:52 ConfID: 6715843 CauseID: 1560038773 OtherID: 1363320538 JT: Japanese Journal of Applied Physics MD: Ibata,51,3r,34301,2012,Drain Current Characteristics of Ferroelectric Gate-All-Around Si Nanowire Transistors Based on Drift/Diffusion Transport Theory DOI: 10.1143/JJAP.51.034301(Journal) (6715843-N) DOI: 10.7567/JJAP.51.034301(Journal) ========================================================== Created: 2023-02-01 12:35:50 ConfID: 6715840 CauseID: 1560038770 OtherID: 1363320344 JT: Japanese Journal of Applied Physics MD: Nagasaki,51,2r,27301,2012,Localized Surface Plasmon Resonance Dew Sensor for Use Under Low Humidity Conditions DOI: 10.1143/JJAP.51.027301(Journal) (6715840-N) DOI: 10.7567/JJAP.51.027301(Journal) ========================================================== Created: 2023-02-01 12:35:51 ConfID: 6715841 CauseID: 1560038771 OtherID: 1363320517 JT: Japanese Journal of Applied Physics MD: Masuda,51,3r,31103,2012,Improvements in Optical Properties of (0001) ZnO Layers Grown on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy Using Thick Buffer Layers DOI: 10.1143/JJAP.51.031103(Journal) (6715841-N) DOI: 10.7567/JJAP.51.031103(Journal) ========================================================== Created: 2023-02-01 12:36:00 ConfID: 6715854 CauseID: 1560038798 OtherID: 1363321252 JT: Japanese Journal of Applied Physics MD: Kikuchi,51,8r,85801,2012,Enhanced Thermoelectric Performance of a Chimney-Ladder (Mn1-xCrx)Siγ (γ∼1.7) Solid Solution DOI: 10.1143/JJAP.51.085801(Journal) (6715854-N) DOI: 10.7567/JJAP.51.085801(Journal) ========================================================== Created: 2023-02-01 12:36:02 ConfID: 6715855 CauseID: 1560038801 OtherID: 1363320580 JT: Japanese Journal of Applied Physics MD: Kado,51,4r,40204,2012,High Hole Mobility in GaAs1-xBix Alloys DOI: 10.1143/JJAP.51.040204(Journal) (6715855-N) DOI: 10.7567/JJAP.51.040204(Journal) ========================================================== Created: 2023-02-01 12:36:01 ConfID: 6715852 CauseID: 1560038800 OtherID: 1363320588 JT: Japanese Journal of Applied Physics MD: Kawaharamura,51,4r,40207,2012,Successful Growth of Conductive Highly Crystalline Sn-Doped α-Ga2O3 Thin Films by Fine-Channel Mist Chemical Vapor Deposition DOI: 10.1143/JJAP.51.040207(Journal) (6715852-N) DOI: 10.7567/JJAP.51.040207(Journal) ========================================================== Created: 2023-02-01 12:36:01 ConfID: 6715853 CauseID: 1560038799 OtherID: 1363320786 JT: Japanese Journal of Applied Physics MD: Abe,51,5r,50205,2012,Primary Factor Extracted for Anomalous Decline of Drain Current in Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.51.050205(Journal) (6715853-N) DOI: 10.7567/JJAP.51.050205(Journal) ========================================================== Created: 2023-02-01 12:36:04 ConfID: 6715850 CauseID: 1560038796 OtherID: 1363320310 JT: Japanese Journal of Applied Physics MD: Zhang,51,2r,24301,2012,A Subthreshold Current Model of Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field Effect Transistors with Vertical Gaussian Profile DOI: 10.1143/JJAP.51.024301(Journal) (6715850-N) DOI: 10.7567/JJAP.51.024301(Journal) ========================================================== Created: 2023-02-01 12:36:00 ConfID: 6715851 CauseID: 1560038797 OtherID: 1363321256 JT: Japanese Journal of Applied Physics MD: Takagi,51,8r,85102,2012,Electronic Structure Modulation of Graphene by Metal Electrodes DOI: 10.1143/JJAP.51.085102(Journal) (6715851-N) DOI: 10.7567/JJAP.51.085102(Journal) ========================================================== Created: 2023-02-01 12:35:58 ConfID: 6715848 CauseID: 1560038787 OtherID: 1363320785 JT: Japanese Journal of Applied Physics MD: Ryu,51,5r,51601,2012,Thermally Dried Ink-Jet Process for 6,13-Bis(triisopropylsilylethynyl)-Pentacene for High Mobility and High Uniformity on a Large Area Substrate DOI: 10.1143/JJAP.51.051601(Journal) (6715848-N) DOI: 10.7567/JJAP.51.051601(Journal) ========================================================== Created: 2023-02-01 12:35:59 ConfID: 6715849 CauseID: 1560038789 OtherID: 1363320328 JT: Japanese Journal of Applied Physics MD: Noguchi,51,2r,25801,2012,Ion Conductivity of Ta2O5 Solid Electrolyte Thin Film Prepared by Combination Sputtering with Radio Frequency Oxygen Plasma Irradiation DOI: 10.1143/JJAP.51.025801(Journal) (6715849-N) DOI: 10.7567/JJAP.51.025801(Journal) ========================================================== Created: 2023-02-01 12:36:13 ConfID: 6715862 CauseID: 1560038822 OtherID: 1363320780 JT: Japanese Journal of Applied Physics MD: Tani,51,5r,50202,2012,Computational Nano-Materials Design of Low Cost and High Efficiency Cu2ZnSn[Se1-xSx]4 Photovoltaic Solar Cells by Self-Organized Two-Dimensional Spinodal Nanodecomposition DOI: 10.1143/JJAP.51.050202(Journal) (6715862-N) DOI: 10.7567/JJAP.51.050202(Journal) ========================================================== Created: 2023-02-01 12:36:14 ConfID: 6715863 CauseID: 1560038823 OtherID: 1363321361 JT: Japanese Journal of Applied Physics MD: Isshiki,51,9r,90108,2012,Enhancement of Diamond Nucleation by Atomic Silicon Microaddition DOI: 10.1143/JJAP.51.090108(Journal) (6715863-N) DOI: 10.7567/JJAP.51.090108(Journal) ========================================================== Created: 2023-02-01 12:36:12 ConfID: 6715860 CauseID: 1560038819 OtherID: 1363320650 JT: Japanese Journal of Applied Physics MD: Mishima,51,4r,45702,2012,Electrostatic Properties of Organic Monolayers on Silicon Oxides Studied by Kelvin Probe Force Microscopy DOI: 10.1143/JJAP.51.045702(Journal) (6715860-N) DOI: 10.7567/JJAP.51.045702(Journal) ========================================================== Created: 2023-02-01 12:36:12 ConfID: 6715861 CauseID: 1560038820 OtherID: 1363320019 JT: Japanese Journal of Applied Physics MD: Yamaguchi,51,11r,114201,2012,Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics DOI: 10.1143/JJAP.51.114201(Journal) (6715861-N) DOI: 10.7567/JJAP.51.114201(Journal) ========================================================== Created: 2023-02-01 12:36:07 ConfID: 6715858 CauseID: 1560038814 OtherID: 1363320541 JT: Japanese Journal of Applied Physics MD: Kwon,51,3r,35001,2012,Characterization of ZnO Nanowire Field Effect Transistors by Fast Hydrogen Peroxide Solution Treatment DOI: 10.1143/JJAP.51.035001(Journal) (6715858-N) DOI: 10.7567/JJAP.51.035001(Journal) ========================================================== Created: 2023-02-01 12:36:11 ConfID: 6715859 CauseID: 1560038815 OtherID: 1363320520 JT: Japanese Journal of Applied Physics MD: Senami,51,3r,31101,2012,Local Dielectric Property of Cubic, Tetragonal, and Monoclinic Hafnium Oxides DOI: 10.1143/JJAP.51.031101(Journal) (6715859-N) DOI: 10.7567/JJAP.51.031101(Journal) ========================================================== Created: 2023-02-01 12:36:02 ConfID: 6715856 CauseID: 1560038802 OtherID: 1363321370 JT: Japanese Journal of Applied Physics MD: Saitoh,51,9r,90120,2012,Classification of Diamond-Like Carbon Films DOI: 10.1143/JJAP.51.090120(Journal) (6715856-N) DOI: 10.7567/JJAP.51.090120(Journal) ========================================================== Created: 2023-02-01 12:36:06 ConfID: 6715857 CauseID: 1560038812 OtherID: 1363321350 JT: Japanese Journal of Applied Physics MD: Kawarada,51,9r,90111,2012,High-Current Metal Oxide Semiconductor Field-Effect Transistors on H-Terminated Diamond Surfaces and Their High-Frequency Operation DOI: 10.1143/JJAP.51.090111(Journal) (6715857-N) DOI: 10.7567/JJAP.51.090111(Journal) ========================================================== Created: 2023-02-01 12:36:23 ConfID: 6715870 CauseID: 1560038844 OtherID: 1363321284 JT: Japanese Journal of Applied Physics MD: Matsutani,51,8r,87001,2012,Microfabrication of Si and GaAs by Plasma Etching Process Using Bacterial Cells as an Etching Mask Material DOI: 10.1143/JJAP.51.087001(Journal) (6715870-N) DOI: 10.7567/JJAP.51.087001(Journal) ========================================================== Created: 2023-02-01 12:36:23 ConfID: 6715871 CauseID: 1560038845 OtherID: 1363320548 JT: Japanese Journal of Applied Physics MD: Ryuzaki,51,3r,36502,2012,Chemical Mechanical Polishing with Nanocolloidal Ceria Slurry for Low-Damage Planarization of Dielectric Films DOI: 10.1143/JJAP.51.036502(Journal) (6715871-N) DOI: 10.7567/JJAP.51.036502(Journal) ========================================================== Created: 2023-02-01 12:36:19 ConfID: 6715868 CauseID: 1560038835 OtherID: 1363320630 JT: Japanese Journal of Applied Physics MD: Chang,51,4r,44103,2012,Improvement of Electrostatic Discharge Protection by Introducing a Spindt-Type Silicon Field Emission Device DOI: 10.1143/JJAP.51.044103(Journal) (6715868-N) DOI: 10.7567/JJAP.51.044103(Journal) ========================================================== Created: 2023-02-01 12:36:20 ConfID: 6715869 CauseID: 1560038837 OtherID: 1363320546 JT: Japanese Journal of Applied Physics MD: Fujiwara,51,3r,36701,2012,Beam Characteristics of Positively and Negatively Charged Droplets Generated by Vacuum Electrospray of an Ionic Liquid DOI: 10.1143/JJAP.51.036701(Journal) (6715869-N) DOI: 10.7567/JJAP.51.036701(Journal) ========================================================== Created: 2023-02-01 12:36:16 ConfID: 6715866 CauseID: 1560038831 OtherID: 1363320544 JT: Japanese Journal of Applied Physics MD: Lee,51,3r,35202,2012,Sensitivity Analysis of a Cracked Atomic Force Microscope Cantilever DOI: 10.1143/JJAP.51.035202(Journal) (6715866-N) DOI: 10.7567/JJAP.51.035202(Journal) ========================================================== Created: 2023-02-01 12:36:18 ConfID: 6715867 CauseID: 1560038833 OtherID: 1363321257 JT: Japanese Journal of Applied Physics MD: Inoue,51,8r,86301,2012,Line-Profiles and Translational Temperatures of Pb Atoms in Multi-Micro Hollow Cathode Lamp Measured by Diode Laser Absorption Spectroscopy DOI: 10.1143/JJAP.51.086301(Journal) (6715867-N) DOI: 10.7567/JJAP.51.086301(Journal) ========================================================== Created: 2023-02-01 12:36:14 ConfID: 6715864 CauseID: 1560038824 OtherID: 1363320662 JT: Japanese Journal of Applied Physics MD: Kikuchi,51,4r,46001,2012,Effect of DC Pre-Discharge on the Generation of Atmospheric Pulsed Microdischarges DOI: 10.1143/JJAP.51.046001(Journal) (6715864-N) DOI: 10.7567/JJAP.51.046001(Journal) ========================================================== Created: 2023-02-01 12:36:15 ConfID: 6715865 CauseID: 1560038828 OtherID: 1363320536 JT: Japanese Journal of Applied Physics MD: Ishida,51,3r,32701,2012,Noninvasive In-vivo Measurements of Microvessels by Reflection-Type Micro Multipoint Laser Doppler Velocimeter DOI: 10.1143/JJAP.51.032701(Journal) (6715865-N) DOI: 10.7567/JJAP.51.032701(Journal) ========================================================== Created: 2023-02-01 12:35:20 ConfID: 6715814 CauseID: 1560038700 OtherID: 1363321249 JT: Japanese Journal of Applied Physics MD: Gu,51,8r,82502,2012,Reed–Solomon Volumetric Coding with Matched Interleaving for Holographic Data Storage DOI: 10.1143/JJAP.51.082502(Journal) (6715814-N) DOI: 10.7567/JJAP.51.082502(Journal) ========================================================== Created: 2023-02-01 12:35:23 ConfID: 6715815 CauseID: 1560038701 OtherID: 1363320605 JT: Japanese Journal of Applied Physics MD: Ishikawa,51,4r,41301,2012,Microscopic Structure of Stepwise Threading Dislocation in 4H-SiC Substrate DOI: 10.1143/JJAP.51.041301(Journal) (6715815-N) DOI: 10.7567/JJAP.51.041301(Journal) ========================================================== Created: 2023-02-01 12:35:16 ConfID: 6715812 CauseID: 1560038693 OtherID: 1363320273 JT: Japanese Journal of Applied Physics MD: Yata,51,2r,22202,2012,Emissive Liquid-Crystal Display Panels Consisting of Red–Green–Blue Patterned Phosphor Layers and Near-Ultraviolet Light-Emitting-Diode Backlight DOI: 10.1143/JJAP.51.022202(Journal) (6715812-N) DOI: 10.7567/JJAP.51.022202(Journal) ========================================================== Created: 2023-02-01 12:35:23 ConfID: 6715813 CauseID: 1560038699 OtherID: 1363321265 JT: Japanese Journal of Applied Physics MD: Suzuki,51,8r,86701,2012,Gabor Holography with Speckle-Free Spherical Wave in Hard X-ray Region DOI: 10.1143/JJAP.51.086701(Journal) (6715813-N) DOI: 10.7567/JJAP.51.086701(Journal) ========================================================== Created: 2023-02-01 12:35:19 ConfID: 6715810 CauseID: 1560038690 OtherID: 1363321234 JT: Japanese Journal of Applied Physics MD: Yamashita,51,8r,80207,2012,Impact of Coumarin Dye Doping on Photovoltaic Properties of Bulk Heterojunction Device DOI: 10.1143/JJAP.51.080207(Journal) (6715810-N) DOI: 10.7567/JJAP.51.080207(Journal) ========================================================== Created: 2023-02-01 12:35:17 ConfID: 6715811 CauseID: 1560038695 OtherID: 1363321363 JT: Japanese Journal of Applied Physics MD: Mizuochi,51,9r,90106,2012,Isotope Effect of Deuterium Microwave Plasmas on the Formation of Atomically Flat (111) Diamond Surfaces DOI: 10.1143/JJAP.51.090106(Journal) (6715811-N) DOI: 10.7567/JJAP.51.090106(Journal) ========================================================== Created: 2023-02-01 12:35:15 ConfID: 6715808 CauseID: 1560038683 OtherID: 1363320272 JT: Japanese Journal of Applied Physics MD: Fujisawa,51,2r,21501,2012,Switching Current Measurements of Self-Assembled Ferroelectric PbTiO3 Nanoislands Using Scanning Probe Microscopy DOI: 10.1143/JJAP.51.021501(Journal) (6715808-N) DOI: 10.7567/JJAP.51.021501(Journal) ========================================================== Created: 2023-02-01 12:35:18 ConfID: 6715809 CauseID: 1560038686 OtherID: 1363320530 JT: Japanese Journal of Applied Physics MD: Ichikawa,51,3r,34103,2012,Organic Photodiode with High Infrared Light Sensitivity Based on Tin Phthalocyanine/C60 Bulk Heterojunction and Optical Interference Effect DOI: 10.1143/JJAP.51.034103(Journal) (6715809-N) DOI: 10.7567/JJAP.51.034103(Journal) ========================================================== Created: 2023-02-01 12:35:27 ConfID: 6715822 CauseID: 1560038715 OtherID: 1363321243 JT: Japanese Journal of Applied Physics MD: Khumaeni,51,8r,82403,2012,Emission Characteristics of Ca and Mg Atoms in Gas Plasma Induced by the Bombardment of Transversely Excited Atmospheric CO2 Laser at 1 atm DOI: 10.1143/JJAP.51.082403(Journal) (6715822-N) DOI: 10.7567/JJAP.51.082403(Journal) ========================================================== Created: 2023-02-01 12:35:27 ConfID: 6715823 CauseID: 1560038714 OtherID: 1363320817 JT: Japanese Journal of Applied Physics MD: Kanasaki,51,5r,56401,2012,The Diagnosis Method for High-Energy Ion Beams Using Backscattered Particles for Laser-Driven Ion Acceleration Experiments DOI: 10.1143/JJAP.51.056401(Journal) (6715823-N) DOI: 10.7567/JJAP.51.056401(Journal) ========================================================== Created: 2023-02-01 12:35:25 ConfID: 6715820 CauseID: 1560038711 OtherID: 1363320663 JT: Japanese Journal of Applied Physics MD: Kimura,51,4r,46202,2012,Properties of Inductively Coupled Radio Frequency CH4/H2 Plasmas: Experiments and Global Model DOI: 10.1143/JJAP.51.046202(Journal) (6715820-N) DOI: 10.7567/JJAP.51.046202(Journal) ========================================================== Created: 2023-02-01 12:35:26 ConfID: 6715821 CauseID: 1560038713 OtherID: 1363320601 JT: Japanese Journal of Applied Physics MD: Kao,51,4r,41502,2012,Ta2O5 Polycrystalline Silicon Capacitors with CF4 Plasma Treatment DOI: 10.1143/JJAP.51.041502(Journal) (6715821-N) DOI: 10.7567/JJAP.51.041502(Journal) ========================================================== Created: 2023-02-01 12:35:25 ConfID: 6715818 CauseID: 1560038710 OtherID: 1363319928 JT: Japanese Journal of Applied Physics MD: Jeong,51,10r,100206,2012,Investigation of the Low-Frequency Noise Behavior and Its Correlation with the Subgap Density of States and Bias-Induced Instabilities in Amorphous InGaZnO Thin-Film Transistors with Various Oxygen Flow Rates DOI: 10.1143/JJAP.51.100206(Journal) (6715818-N) DOI: 10.7567/JJAP.51.100206(Journal) ========================================================== Created: 2023-02-01 12:35:26 ConfID: 6715819 CauseID: 1560038712 OtherID: 1363321095 JT: Japanese Journal of Applied Physics MD: Ishigaki,51,7r,76504,2012,Investigation and Integration of Polycrystalline Silicon/TiN/SiON Gate Stack in Silicon on Thin Buried Oxide Complementary Metal Oxide Semiconductor Field Effect Transistors DOI: 10.1143/JJAP.51.076504(Journal) (6715819-N) DOI: 10.7567/JJAP.51.076504(Journal) ========================================================== Created: 2023-02-01 12:35:24 ConfID: 6715816 CauseID: 1560038703 OtherID: 1363321210 JT: Japanese Journal of Applied Physics MD: Kim,51,8r,80202,2012,High-Speed Measurement of Refractive Index Using Dielectric Multilayer Films Deposited on Optical Fiber End DOI: 10.1143/JJAP.51.080202(Journal) (6715816-N) DOI: 10.7567/JJAP.51.080202(Journal) ========================================================== Created: 2023-02-01 12:35:22 ConfID: 6715817 CauseID: 1560038707 OtherID: 1363320300 JT: Japanese Journal of Applied Physics MD: Park,51,2r,25501,2012,Growth of GaN Layer on Patterned Al/Ti Metal Mask by Metal–Organic Chemical Vapor Deposition DOI: 10.1143/JJAP.51.025501(Journal) (6715817-N) DOI: 10.7567/JJAP.51.025501(Journal) ========================================================== Created: 2023-02-01 12:35:38 ConfID: 6715830 CauseID: 1560038740 OtherID: 1363320289 JT: Japanese Journal of Applied Physics MD: Sakai,51,2r,23001,2012,Negative Magnetoresistance Generated by Combination of Spin–Orbit Interaction and Applied Magnetic Field DOI: 10.1143/JJAP.51.023001(Journal) (6715830-N) DOI: 10.7567/JJAP.51.023001(Journal) ========================================================== Created: 2023-02-01 12:35:40 ConfID: 6715831 CauseID: 1560038747 OtherID: 1363321259 JT: Japanese Journal of Applied Physics MD: Fukada,51,8r,85101,2012,Graphene Made by Mechanical Exfoliation of Graphite Intercalation Compound DOI: 10.1143/JJAP.51.085101(Journal) (6715831-N) DOI: 10.7567/JJAP.51.085101(Journal) ========================================================== Created: 2023-02-01 12:35:35 ConfID: 6715828 CauseID: 1560038734 OtherID: 1363320290 JT: Japanese Journal of Applied Physics MD: Usagawa,51,2r,24101,2012,Device Analysis of Pt/Ti Gate Si-Metal–Oxide–Semiconductor Field-Effect Transistor Hydrogen Gas Sensors: Unintentional Oxygen Invasion into Ti Layers DOI: 10.1143/JJAP.51.024101(Journal) (6715828-N) DOI: 10.7567/JJAP.51.024101(Journal) ========================================================== Created: 2023-02-01 12:35:36 ConfID: 6715829 CauseID: 1560038735 OtherID: 1363320303 JT: Japanese Journal of Applied Physics MD: Rafiq,51,2r,25202,2012,Conduction Bottleneck in Silicon Nanochain Single Electron Transistors Operating at Room Temperature DOI: 10.1143/JJAP.51.025202(Journal) (6715829-N) DOI: 10.7567/JJAP.51.025202(Journal) ========================================================== Created: 2023-02-01 12:35:33 ConfID: 6715826 CauseID: 1560038729 OtherID: 1363320784 JT: Japanese Journal of Applied Physics MD: Fuchida,51,5r,50203,2012,Fabrication and Characterization of Bragg Reflector Slow-Light Waveguide with Oxide Lateral Confinement DOI: 10.1143/JJAP.51.050203(Journal) (6715826-N) DOI: 10.7567/JJAP.51.050203(Journal) ========================================================== Created: 2023-02-01 12:35:35 ConfID: 6715827 CauseID: 1560038733 OtherID: 1363321242 JT: Japanese Journal of Applied Physics MD: Yen,51,8r,81201,2012,Very Low Leakage Current of High Band-Gap Al2O3 Stacked on TiO2/InP Metal–Oxide–Semiconductor Capacitor with Sulfur and Hydrogen Treatments DOI: 10.1143/JJAP.51.081201(Journal) (6715827-N) DOI: 10.7567/JJAP.51.081201(Journal) ========================================================== Created: 2023-02-01 12:35:28 ConfID: 6715824 CauseID: 1560038717 OtherID: 1363320515 JT: Japanese Journal of Applied Physics MD: Imanaga,51,3r,31502,2012,Material Properties of Barium Titanate Single Crystal from Modified Time-Dependent Devonshire–Ginzburg–Landau Model DOI: 10.1143/JJAP.51.031502(Journal) (6715824-N) DOI: 10.7567/JJAP.51.031502(Journal) ========================================================== Created: 2023-02-01 12:35:32 ConfID: 6715825 CauseID: 1560038727 OtherID: 1363320637 JT: Japanese Journal of Applied Physics MD: Noguchi,51,4r,45504,2012,Effect of Nucleation Layer of Photocatalytic TiO2 Thin Film Prepared by Two-Step Deposition Using Radical-Assisted Sputtering DOI: 10.1143/JJAP.51.045504(Journal) (6715825-N) DOI: 10.7567/JJAP.51.045504(Journal) ========================================================== Created: 2023-02-01 12:35:48 ConfID: 6715838 CauseID: 1560038765 OtherID: 1363320331 JT: Japanese Journal of Applied Physics MD: Katayama,51,2r,26603,2012,Rapid and High-Sensitivity Measurements of O2 A-Band Absorption Spectra with Combination of a Current-Modulated Distributed-Feedback Diode Laser and Balance Detection DOI: 10.1143/JJAP.51.026603(Journal) (6715838-N) DOI: 10.7567/JJAP.51.026603(Journal) ========================================================== Created: 2023-02-01 12:35:50 ConfID: 6715839 CauseID: 1560038768 OtherID: 1363320372 JT: Japanese Journal of Applied Physics MD: Hiramatsu,51,2r,28005,2012,Effect of Current on Domain Wall Depinning Field in Co/Ni Nanowire DOI: 10.1143/JJAP.51.028005(Journal) (6715839-N) DOI: 10.7567/JJAP.51.028005(Journal) ========================================================== Created: 2023-02-01 12:35:46 ConfID: 6715836 CauseID: 1560038761 OtherID: 1363321390 JT: Japanese Journal of Applied Physics MD: Kim,51,9r,92502,2012,Low-Loss 1 ×2 Plastic Optical Fiber Coupler Incorporating a Tapered Polymeric Waveguide and Plastic Optical Fiber Transition Regions DOI: 10.1143/JJAP.51.092502(Journal) (6715836-N) DOI: 10.7567/JJAP.51.092502(Journal) ========================================================== Created: 2023-02-01 12:35:47 ConfID: 6715837 CauseID: 1560038763 OtherID: 1363321369 JT: Japanese Journal of Applied Physics MD: Zhao,51,9r,90110,2012,Effect of Substrates on the Temperature Dependence of Fluorescence Spectra of Nitrogen Vacancy Centers in Diamond Nanocrystals DOI: 10.1143/JJAP.51.090110(Journal) (6715837-N) DOI: 10.7567/JJAP.51.090110(Journal) ========================================================== Created: 2023-02-01 12:35:45 ConfID: 6715834 CauseID: 1560038756 OtherID: 1363321248 JT: Japanese Journal of Applied Physics MD: Zhang,51,8r,85802,2012,Effects of Nb Surface and Ti Interface Layers on Thermal Stability and Electrical Resistivity of Ag Thin Films DOI: 10.1143/JJAP.51.085802(Journal) (6715834-N) DOI: 10.7567/JJAP.51.085802(Journal) ========================================================== Created: 2023-02-01 12:35:46 ConfID: 6715835 CauseID: 1560038759 OtherID: 1363320302 JT: Japanese Journal of Applied Physics MD: Kawagoe,51,2r,25602,2012,Growth and Surface Structure of Thin Co Films on Au(001) Studied by Scanning Tunneling Microscopy DOI: 10.1143/JJAP.51.025602(Journal) (6715835-N) DOI: 10.7567/JJAP.51.025602(Journal) ========================================================== Created: 2023-02-01 12:35:41 ConfID: 6715832 CauseID: 1560038748 OtherID: 1363321260 JT: Japanese Journal of Applied Physics MD: Kim,51,8r,84302,2012,Disturbance Characteristics of Vertical Channel Phase Change Random Access Memory Array DOI: 10.1143/JJAP.51.084302(Journal) (6715832-N) DOI: 10.7567/JJAP.51.084302(Journal) ========================================================== Created: 2023-02-01 12:35:41 ConfID: 6715833 CauseID: 1560038749 OtherID: 1363320508 JT: Japanese Journal of Applied Physics MD: Ishida,51,3r,30203,2012,Ex-vivo Imaging of Thyroid Gland Using Ultrahigh-Resolution Optical Coherence Tomography at Wavelength from 800 to 1700 nm DOI: 10.1143/JJAP.51.030203(Journal) (6715833-N) DOI: 10.7567/JJAP.51.030203(Journal) ========================================================== Created: 2023-02-01 12:34:42 ConfID: 6715782 CauseID: 1560038581 OtherID: 1363320332 JT: Japanese Journal of Applied Physics MD: Lee,51,2r,26502,2012,Investigation of Al-Doped ZnO Channel Layer in ZnO-Based Transparent Thin-Film Transistors DOI: 10.1143/JJAP.51.026502(Journal) (6715782-N) DOI: 10.7567/JJAP.51.026502(Journal) ========================================================== Created: 2023-02-01 12:34:46 ConfID: 6715783 CauseID: 1560038593 OtherID: 1363321058 JT: Japanese Journal of Applied Physics MD: Vijayakumar,51,7r,70206,2012,Phase-Shifted Fresnel Zone Lenses for Photomixing Generation of Coherent THz Wave DOI: 10.1143/JJAP.51.070206(Journal) (6715783-N) DOI: 10.7567/JJAP.51.070206(Journal) ========================================================== Created: 2023-02-01 12:34:44 ConfID: 6715780 CauseID: 1560038577 OtherID: 1363321069 JT: Japanese Journal of Applied Physics MD: Hu,51,7r,74001,2012,Channel Length and Time Dependent Interface Trap Generation near the Source Due to Hot-Carrier Injection in Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.51.074001(Journal) (6715780-N) DOI: 10.7567/JJAP.51.074001(Journal) ========================================================== Created: 2023-02-01 12:34:40 ConfID: 6715781 CauseID: 1560038579 OtherID: 1363320512 JT: Japanese Journal of Applied Physics MD: Kakuno,51,3r,30201,2012,Wavelength Tuning by Temperature Control in MgO-Doped LiNbO3 Waveguide Quasi-Phase-Matching Twin Photon Generation Device DOI: 10.1143/JJAP.51.030201(Journal) (6715781-N) DOI: 10.7567/JJAP.51.030201(Journal) ========================================================== Created: 2023-02-01 12:34:32 ConfID: 6715778 CauseID: 1560038551 OtherID: 1363320336 JT: Japanese Journal of Applied Physics MD: Okayama,51,2r,26702,2012,High-Precision Quadrupole Correction Lens for Ion-Beam Focusing: Design and Test of Multistage Self-Aligned Quadrupole Correction-Lens System DOI: 10.1143/JJAP.51.026702(Journal) (6715778-N) DOI: 10.7567/JJAP.51.026702(Journal) ========================================================== Created: 2023-02-01 12:34:35 ConfID: 6715779 CauseID: 1560038558 OtherID: 1363321065 JT: Japanese Journal of Applied Physics MD: Shibata,51,7r,75502,2012,Evaluation of Crystal Orientation for (K,Na)NbO3 Films Using X-ray Diffraction Reciprocal Space Map and Relationship between Crystal Orientation and Piezoelectric Coefficient DOI: 10.1143/JJAP.51.075502(Journal) (6715779-N) DOI: 10.7567/JJAP.51.075502(Journal) ========================================================== Created: 2023-02-01 12:34:30 ConfID: 6715776 CauseID: 1560038542 OtherID: 1363320532 JT: Japanese Journal of Applied Physics MD: Oemry,51,3r,35002,2012,Effects of Cluster Size on Platinum–Oxygen Bonds Formation in Small Platinum Clusters DOI: 10.1143/JJAP.51.035002(Journal) (6715776-N) DOI: 10.7567/JJAP.51.035002(Journal) ========================================================== Created: 2023-02-01 12:34:33 ConfID: 6715777 CauseID: 1560038543 OtherID: 1363321062 JT: Japanese Journal of Applied Physics MD: Turan,51,7r,70210,2012,Rapid Reversible Degradation of Silicon Thin Films by a Treatment in Water DOI: 10.1143/JJAP.51.070210(Journal) (6715777-N) DOI: 10.7567/JJAP.51.070210(Journal) ========================================================== Created: 2023-02-01 12:35:03 ConfID: 6715790 CauseID: 1560038640 OtherID: 1363320280 JT: Japanese Journal of Applied Physics MD: Lou,51,2r,21603,2012,Temperature Dependence of Trap Density Distribution in Poly(3-hexylthiophene) and 1-(3-Methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 Based Blending Films under Illumination DOI: 10.1143/JJAP.51.021603(Journal) (6715790-N) DOI: 10.7567/JJAP.51.021603(Journal) ========================================================== Created: 2023-02-01 12:35:04 ConfID: 6715791 CauseID: 1560038642 OtherID: 1363320560 JT: Japanese Journal of Applied Physics MD: Ishibashi,51,3r,35604,2012,Spatial Inhomogeneity of Aluminum Content in Air-Bridged Lateral Epitaxially Grown AlGaN Ternary Alloy Films Probed by Cross-Sectional Scanning Near-Field Optical Microscopy DOI: 10.1143/JJAP.51.035604(Journal) (6715791-N) DOI: 10.7567/JJAP.51.035604(Journal) ========================================================== Created: 2023-02-01 12:34:59 ConfID: 6715788 CauseID: 1560038627 OtherID: 1363321212 JT: Japanese Journal of Applied Physics MD: Miyamoto,51,8r,80201,2012,InAs Quantum Dot Growth on a Thin GaNP Buffer Layer on GaP by Metalorganic Chemical Vapor Deposition DOI: 10.1143/JJAP.51.080201(Journal) (6715788-N) DOI: 10.7567/JJAP.51.080201(Journal) ========================================================== Created: 2023-02-01 12:34:56 ConfID: 6715789 CauseID: 1560038632 OtherID: 1363320556 JT: Japanese Journal of Applied Physics MD: Sakamoto,51,3r,35504,2012,Self-Assembled Growth of Spinel (Fe,Zn)3O4–Perovskite BiFeO3 Nanocomposite Structures Using Pulsed Laser Deposition DOI: 10.1143/JJAP.51.035504(Journal) (6715789-N) DOI: 10.7567/JJAP.51.035504(Journal) ========================================================== Created: 2023-02-01 12:34:54 ConfID: 6715786 CauseID: 1560038609 OtherID: 1363320269 JT: Japanese Journal of Applied Physics MD: Lee,51,2r,21602,2012,Process Condition Considered Preparation and Characterization of Plasma Polymerized Methyl Methacrylate Thin Films for Organic Thin Film Transistor Application DOI: 10.1143/JJAP.51.021602(Journal) (6715786-N) DOI: 10.7567/JJAP.51.021602(Journal) ========================================================== Created: 2023-02-01 12:34:50 ConfID: 6715787 CauseID: 1560038613 OtherID: 1363319923 JT: Japanese Journal of Applied Physics MD: Achiwa,51,10r,100204,2012,Interfacial Structure of Composites of Poly(m-xylylen adipamide) and Silica Nano-Particles DOI: 10.1143/JJAP.51.100204(Journal) (6715787-N) DOI: 10.7567/JJAP.51.100204(Journal) ========================================================== Created: 2023-02-01 12:34:47 ConfID: 6715784 CauseID: 1560038594 OtherID: 1363320638 JT: Japanese Journal of Applied Physics MD: Matsushima,51,4r,45103,2012,Formation of Graphene-Containing Porous Carbon Film for Electric Double-Layer Capacitor by Pulsed Plasma Chemical Vapor Deposition DOI: 10.1143/JJAP.51.045103(Journal) (6715784-N) DOI: 10.7567/JJAP.51.045103(Journal) ========================================================== Created: 2023-02-01 12:34:48 ConfID: 6715785 CauseID: 1560038596 OtherID: 1363321052 JT: Japanese Journal of Applied Physics MD: Furukawa,51,7r,70205,2012,Rapid Decomposition of Cellulose Dissolved in Ionic Liquid Using Gas–Liquid Interface Discharge DOI: 10.1143/JJAP.51.070205(Journal) (6715785-N) DOI: 10.7567/JJAP.51.070205(Journal) ========================================================== Created: 2023-02-01 12:35:09 ConfID: 6715798 CauseID: 1560038659 OtherID: 1363321080 JT: Japanese Journal of Applied Physics MD: Yao,51,7r,75001,2012,Effect of Surface Elasticity on the Piezoelectric Potential of a Bent ZnO Nanowire DOI: 10.1143/JJAP.51.075001(Journal) (6715798-N) DOI: 10.7567/JJAP.51.075001(Journal) ========================================================== Created: 2023-02-01 12:35:06 ConfID: 6715799 CauseID: 1560038661 OtherID: 1363321079 JT: Japanese Journal of Applied Physics MD: Li,51,7r,76501,2012,Impact of Deposition Temperature of the Silicon Oxide Passivation on the Performance of Indium Zinc Oxide Thin-Film Transistors DOI: 10.1143/JJAP.51.076501(Journal) (6715799-N) DOI: 10.7567/JJAP.51.076501(Journal) ========================================================== Created: 2023-02-01 12:35:08 ConfID: 6715796 CauseID: 1560038657 OtherID: 1363320607 JT: Japanese Journal of Applied Physics MD: Yanase,51,4r,41603,2012,Fabrication of Piezoelectric Polyurea Films by Alternating Deposition DOI: 10.1143/JJAP.51.041603(Journal) (6715796-N) DOI: 10.7567/JJAP.51.041603(Journal) ========================================================== Created: 2023-02-01 12:35:08 ConfID: 6715797 CauseID: 1560038658 OtherID: 1363320279 JT: Japanese Journal of Applied Physics MD: Hong,51,2r,22201,2012,Unitary Transflective Liquid Crystal Display with an In-Cell Retarder on a Wire Grid Plate as a Reflector–Polarizer in a Single Driving Configuration DOI: 10.1143/JJAP.51.022201(Journal) (6715797-N) DOI: 10.7567/JJAP.51.022201(Journal) ========================================================== Created: 2023-02-01 12:35:03 ConfID: 6715794 CauseID: 1560038648 OtherID: 1363320314 JT: Japanese Journal of Applied Physics MD: Aida,51,2r,25502,2012,III–Nitride Epitaxy on Atomically Controlled Surface of Sapphire Substrate with Slight Misorientation DOI: 10.1143/JJAP.51.025502(Journal) (6715794-N) DOI: 10.7567/JJAP.51.025502(Journal) ========================================================== Created: 2023-02-01 12:35:05 ConfID: 6715795 CauseID: 1560038655 OtherID: 1363320527 JT: Japanese Journal of Applied Physics MD: Liu,51,3r,31202,2012,Photoluminescence Study of Defect Levels in CuInS2 Thin Films Grown by Sulfurization Using Ditertiarybutylsulfide DOI: 10.1143/JJAP.51.031202(Journal) (6715795-N) DOI: 10.7567/JJAP.51.031202(Journal) ========================================================== Created: 2023-02-01 12:35:00 ConfID: 6715792 CauseID: 1560038644 OtherID: 1363320260 JT: Japanese Journal of Applied Physics MD: Kumar,51,2r,20203,2012,Band-Structure Lineup at In0.2Ga0.8N/Si Heterostructures by X-ray Photoelectron Spectroscopy DOI: 10.1143/JJAP.51.020203(Journal) (6715792-N) DOI: 10.7567/JJAP.51.020203(Journal) ========================================================== Created: 2023-02-01 12:35:02 ConfID: 6715793 CauseID: 1560038647 OtherID: 1363321068 JT: Japanese Journal of Applied Physics MD: Kwon,51,7r,76201,2012,Etching Behavior and Mechanism of In- and Ga-Doped ZnO Thin Films in Inductively Coupled BCl3/Cl2/Ar Plasmas DOI: 10.1143/JJAP.51.076201(Journal) (6715793-N) DOI: 10.7567/JJAP.51.076201(Journal) ========================================================== Created: 2023-02-01 12:35:12 ConfID: 6715806 CauseID: 1560038678 OtherID: 1363321084 JT: Japanese Journal of Applied Physics MD: Yamashita,51,7r,76704,2012,Hexagonally Arrayed 17 nm Interpenetrating and Continuous Biphasic Structure via Block-Copolymer-Templating Process DOI: 10.1143/JJAP.51.076704(Journal) (6715806-N) DOI: 10.7567/JJAP.51.076704(Journal) ========================================================== Created: 2023-02-01 12:35:13 ConfID: 6715807 CauseID: 1560038681 OtherID: 1363321373 JT: Japanese Journal of Applied Physics MD: Hirama,51,9r,90114,2012,Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface DOI: 10.1143/JJAP.51.090114(Journal) (6715807-N) DOI: 10.7567/JJAP.51.090114(Journal) ========================================================== Created: 2023-02-01 12:35:11 ConfID: 6715804 CauseID: 1560038676 OtherID: 1363321073 JT: Japanese Journal of Applied Physics MD: Nakazawa,51,7r,75801,2012,Hydrogen Effects on the Properties of Silicon/Nitrogen-Coincorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition DOI: 10.1143/JJAP.51.075801(Journal) (6715804-N) DOI: 10.7567/JJAP.51.075801(Journal) ========================================================== Created: 2023-02-01 12:35:10 ConfID: 6715805 CauseID: 1560038675 OtherID: 1363320603 JT: Japanese Journal of Applied Physics MD: Xie,51,4r,41103,2012,First-Principles Study on Intrinsic Point Defects in Rhombohedral LaAlO3 and Their Effects on Electrical Properties DOI: 10.1143/JJAP.51.041103(Journal) (6715805-N) DOI: 10.7567/JJAP.51.041103(Journal) ========================================================== Created: 2023-02-01 12:35:14 ConfID: 6715802 CauseID: 1560038673 OtherID: 1363320262 JT: Japanese Journal of Applied Physics MD: Nam,51,2r,21102,2012,Optical Properties of ZnO Soccer-Ball Structures Grown by Vapor Phase Transport DOI: 10.1143/JJAP.51.021102(Journal) (6715802-N) DOI: 10.7567/JJAP.51.021102(Journal) ========================================================== Created: 2023-02-01 12:35:14 ConfID: 6715803 CauseID: 1560038674 OtherID: 1363320255 JT: Japanese Journal of Applied Physics MD: Kato,51,2r,21201,2012,Evaluation of Off-State Current Characteristics of Transistor Using Oxide Semiconductor Material, Indium–Gallium–Zinc Oxide DOI: 10.1143/JJAP.51.021201(Journal) (6715803-N) DOI: 10.7567/JJAP.51.021201(Journal) ========================================================== Created: 2023-02-01 12:35:07 ConfID: 6715800 CauseID: 1560038664 OtherID: 1363320624 JT: Japanese Journal of Applied Physics MD: Chen,51,4r,41605,2012,Analyzing Photo Induced Internal Electric Field in Pentacene/C60 Double-Layer Organic Solar Cells under Various External Voltages by Electric-Field-Induced Optical Second Harmonic Generation Measurement DOI: 10.1143/JJAP.51.041605(Journal) (6715800-N) DOI: 10.7567/JJAP.51.041605(Journal) ========================================================== Created: 2023-02-01 12:35:13 ConfID: 6715801 CauseID: 1560038670 OtherID: 1363320337 JT: Japanese Journal of Applied Physics MD: Hiasa,51,2r,25703,2012,Minitips in Frequency-Modulation Atomic Force Microscopy at Liquid–Solid Interfaces DOI: 10.1143/JJAP.51.025703(Journal) (6715801-N) DOI: 10.7567/JJAP.51.025703(Journal) ========================================================== Created: 2023-02-01 12:39:11 ConfID: 6716006 CauseID: 1560039361 OtherID: 1363321049 JT: Japanese Journal of Applied Physics MD: Akaiwa,51,7r,70203,2012,Electrical Conductive Corundum-Structured α-Ga2O3 Thin Films on Sapphire with Tin-Doping Grown by Spray-Assisted Mist Chemical Vapor Deposition DOI: 10.1143/JJAP.51.070203(Journal) (6716006-N) DOI: 10.7567/JJAP.51.070203(Journal) ========================================================== Created: 2023-02-01 12:39:12 ConfID: 6716007 CauseID: 1560039362 OtherID: 1363320810 JT: Japanese Journal of Applied Physics MD: Shimizu,51,5r,55702,2012,Translation from Schottky Barrier to Atomic Bridging-Type Surface Photovoltages in Cr-Aqueous-Solution-Rinsed Si(001) Wafers DOI: 10.1143/JJAP.51.055702(Journal) (6716007-N) DOI: 10.7567/JJAP.51.055702(Journal) ========================================================== Created: 2023-02-01 12:39:14 ConfID: 6716004 CauseID: 1560039359 OtherID: 1363320034 JT: Japanese Journal of Applied Physics MD: Okazaki,51,11r,118003,2012,Fabrication of Nb-Doped TiO2 Transparent Conducting Films by Postdeposition Annealing under Nitrogen Atmosphere DOI: 10.1143/JJAP.51.118003(Journal) (6716004-N) DOI: 10.7567/JJAP.51.118003(Journal) ========================================================== Created: 2023-02-01 12:39:11 ConfID: 6716005 CauseID: 1560039360 OtherID: 1363320789 JT: Japanese Journal of Applied Physics MD: Li,51,5r,52001,2012,Hybrid Method for Analyzing the Torsional Vibration of One-Dimensional Phononic-Band-Gap Shafts DOI: 10.1143/JJAP.51.052001(Journal) (6716005-N) DOI: 10.7567/JJAP.51.052001(Journal) ========================================================== Created: 2023-02-01 12:39:10 ConfID: 6716002 CauseID: 1560039356 OtherID: 1363321241 JT: Japanese Journal of Applied Physics MD: Lee,51,8r,80206,2012,Enhancement of Temperature Sensitivity for Metal–Insulator–Semiconductor Temperature Sensors by Using Bi2Mg2/3Nb4/3O7 Film DOI: 10.1143/JJAP.51.080206(Journal) (6716002-N) DOI: 10.7567/JJAP.51.080206(Journal) ========================================================== Created: 2023-02-01 12:39:13 ConfID: 6716003 CauseID: 1560039357 OtherID: 1363321060 JT: Japanese Journal of Applied Physics MD: Zheng,51,7r,72101,2012,Role of InGaN Insertion Layer on Nitride-Based Light-Emitting Diodes DOI: 10.1143/JJAP.51.072101(Journal) (6716003-N) DOI: 10.7567/JJAP.51.072101(Journal) ========================================================== Created: 2023-02-01 12:39:09 ConfID: 6716000 CauseID: 1560039343 OtherID: 1363320881 JT: Japanese Journal of Applied Physics MD: Okura,51,6r,62602,2012,X-ray Absorption Fine Structure Analysis of Valence State of Ce in Y3Al5O12:Ce Phosphor Synthesized by Coprecipitation Method DOI: 10.1143/JJAP.51.062602(Journal) (6716000-N) DOI: 10.7567/JJAP.51.062602(Journal) ========================================================== Created: 2023-02-01 12:39:06 ConfID: 6716001 CauseID: 1560039344 OtherID: 1363320893 JT: Japanese Journal of Applied Physics MD: Kaiju,51,6r,65202,2012,Fabrication of Nickel/Organic-Molecule/Nickel Nanoscale Junctions Utilizing Thin-Film Edges and Their Structural and Electrical Properties DOI: 10.1143/JJAP.51.065202(Journal) (6716001-N) DOI: 10.7567/JJAP.51.065202(Journal) ========================================================== Created: 2023-02-01 12:39:20 ConfID: 6716014 CauseID: 1560039385 OtherID: 1363320670 JT: Japanese Journal of Applied Physics MD: Yamamoto,51,4r,48005,2012,Comprehensive Study of the X-Ray Photoelectron Spectroscopy Peak Shift of La-Incorporated Hf Oxide for Gate Dielectrics DOI: 10.1143/JJAP.51.048005(Journal) (6716014-N) DOI: 10.7567/JJAP.51.048005(Journal) ========================================================== Created: 2023-02-01 12:39:23 ConfID: 6716015 CauseID: 1560039387 OtherID: 1363321258 JT: Japanese Journal of Applied Physics MD: Mallik,51,8r,84301,2012,Observation of Current Enhancement Due to Drain-Induced Drain Tunneling in Tunnel Field-Effect Transistors DOI: 10.1143/JJAP.51.084301(Journal) (6716015-N) DOI: 10.7567/JJAP.51.084301(Journal) ========================================================== Created: 2023-02-01 12:39:16 ConfID: 6716012 CauseID: 1560039373 OtherID: 1363320886 JT: Japanese Journal of Applied Physics MD: Wang,51,6r,66502,2012,High-Performance Excimer-Laser-Crystallized Polycrystalline Silicon Thin-Film Transistors with the Pre-Patterned Recessed Channel DOI: 10.1143/JJAP.51.066502(Journal) (6716012-N) DOI: 10.7567/JJAP.51.066502(Journal) ========================================================== Created: 2023-02-01 12:39:16 ConfID: 6716013 CauseID: 1560039375 OtherID: 1363321247 JT: Japanese Journal of Applied Physics MD: Seong,51,8r,83101,2012,Perfect Domain-Lattice Matching between MgB2 and Al2O3: Single-Crystal MgB2 Thin Films Grown on Sapphire DOI: 10.1143/JJAP.51.083101(Journal) (6716013-N) DOI: 10.7567/JJAP.51.083101(Journal) ========================================================== Created: 2023-02-01 12:39:19 ConfID: 6716010 CauseID: 1560039372 OtherID: 1363320722 JT: Japanese Journal of Applied Physics MD: Dharmiza,51,4s,407,2012,An Inverter-Based Wideband Low-Noise Amplifier in 40 nm Complementary Metal Oxide Semiconductor DOI: 10.1143/JJAP.51.04DE07(Journal) (6716010-N) DOI: 10.7567/JJAP.51.04DE07(Journal) ========================================================== Created: 2023-02-01 12:39:18 ConfID: 6716011 CauseID: 1560039370 OtherID: 1363320062 JT: Japanese Journal of Applied Physics MD: Fukuda,51,12r,122103,2012,White Light-Emitting Diodes Using Sr-Containing Sialon Phosphors DOI: 10.1143/JJAP.51.122103(Journal) (6716011-N) DOI: 10.7567/JJAP.51.122103(Journal) ========================================================== Created: 2023-02-01 12:39:15 ConfID: 6716008 CauseID: 1560039368 OtherID: 1363320030 JT: Japanese Journal of Applied Physics MD: Tega,51,11r,114001,2012,Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates DOI: 10.1143/JJAP.51.114001(Journal) (6716008-N) DOI: 10.7567/JJAP.51.114001(Journal) ========================================================== Created: 2023-02-01 12:39:19 ConfID: 6716009 CauseID: 1560039371 OtherID: 1363320888 JT: Japanese Journal of Applied Physics MD: Cheng,51,6r,67002,2012,Optical Tweezers-Assisted Cross-Correlation Analysis for a Non-intrusive Fluid Temperature Measurement in Microdomains DOI: 10.1143/JJAP.51.067002(Journal) (6716009-N) DOI: 10.7567/JJAP.51.067002(Journal) ========================================================== Created: 2023-02-01 12:39:25 ConfID: 6716022 CauseID: 1560039402 OtherID: 1363321059 JT: Japanese Journal of Applied Physics MD: Kohno,51,7r,72102,2012,Internal Quantum Efficiency and Nonradiative Recombination Rate in InGaN-Based Near-Ultraviolet Light-Emitting Diodes DOI: 10.1143/JJAP.51.072102(Journal) (6716022-N) DOI: 10.7567/JJAP.51.072102(Journal) ========================================================== Created: 2023-02-01 12:39:17 ConfID: 6716023 CauseID: 1560039377 OtherID: 1363320871 JT: Japanese Journal of Applied Physics MD: Yin,51,6r,64101,2012,Controllable Crystallization in Phase-Change Memory for Low-Power Multilevel Storage DOI: 10.1143/JJAP.51.064101(Journal) (6716023-N) DOI: 10.7567/JJAP.51.064101(Journal) ========================================================== Created: 2023-02-01 12:39:22 ConfID: 6716020 CauseID: 1560039393 OtherID: 1363321240 JT: Japanese Journal of Applied Physics MD: Huang,51,8r,81302,2012,Effects of Low Temperature Electronic Cyclotron Resonance Hydrogen Plasma Treatment and Annealing on the Electrical Properties of Ti and Ni Contacts to 4H-SiC DOI: 10.1143/JJAP.51.081302(Journal) (6716020-N) DOI: 10.7567/JJAP.51.081302(Journal) ========================================================== Created: 2023-02-01 12:39:25 ConfID: 6716021 CauseID: 1560039399 OtherID: 1363321050 JT: Japanese Journal of Applied Physics MD: Shu,51,7r,72301,2012,Dependence of Biasing Voltage and Illumination Power on the Built-in Electric Field of InGaP Solar Cells DOI: 10.1143/JJAP.51.072301(Journal) (6716021-N) DOI: 10.7567/JJAP.51.072301(Journal) ========================================================== Created: 2023-02-01 12:39:24 ConfID: 6716018 CauseID: 1560039390 OtherID: 1363320055 JT: Japanese Journal of Applied Physics MD: Lee,51,12r,120202,2012,Nonvolatile Hybrid Memory Cell Embedded with Ni Nanocrystals in Poly(3-hexylthiophene) DOI: 10.1143/JJAP.51.120202(Journal) (6716018-N) DOI: 10.7567/JJAP.51.120202(Journal) ========================================================== Created: 2023-02-01 12:39:21 ConfID: 6716019 CauseID: 1560039392 OtherID: 1363321239 JT: Japanese Journal of Applied Physics MD: Goda,51,8r,81701,2012,Analysis Technique for Wavelength Dispersion of Refractive Indices by Renormalized Transmission Spectroscopic Ellipsometry DOI: 10.1143/JJAP.51.081701(Journal) (6716019-N) DOI: 10.7567/JJAP.51.081701(Journal) ========================================================== Created: 2023-02-01 12:39:23 ConfID: 6716016 CauseID: 1560039388 OtherID: 1363320880 JT: Japanese Journal of Applied Physics MD: Lee,51,6r,61603,2012,Study on Preparation of High-k Organic–Inorganic Thin Film for Organic–Inorganic Thin Film Transistor Gate Dielectric Application DOI: 10.1143/JJAP.51.061603(Journal) (6716016-N) DOI: 10.7567/JJAP.51.061603(Journal) ========================================================== Created: 2023-02-01 12:39:21 ConfID: 6716017 CauseID: 1560039391 OtherID: 1363320667 JT: Japanese Journal of Applied Physics MD: Lee,51,4r,47201,2012,A Ferrofluidic Magnetic Micropump for Variable-Flow-Rate Applications DOI: 10.1143/JJAP.51.047201(Journal) (6716017-N) DOI: 10.7567/JJAP.51.047201(Journal) ========================================================== Created: 2023-02-01 12:39:31 ConfID: 6716030 CauseID: 1560039424 OtherID: 1363320080 JT: Japanese Journal of Applied Physics MD: Yano,51,12r,122401,2012,Pulse Excitation Method of Coherent-Population-Trapping Suitable for Chip-Scale Atomic Clock DOI: 10.1143/JJAP.51.122401(Journal) (6716030-N) DOI: 10.7567/JJAP.51.122401(Journal) ========================================================== Created: 2023-02-01 12:39:38 ConfID: 6716031 CauseID: 1560039432 OtherID: 1363320563 JT: Japanese Journal of Applied Physics MD: Sameshima,51,3s,304,2012,Minority Carrier Lifetime Behavior in Crystalline Silicon in Rapid Laser Heating DOI: 10.1143/JJAP.51.03CA04(Journal) (6716031-N) DOI: 10.7567/JJAP.51.03CA04(Journal) ========================================================== Created: 2023-02-01 12:39:31 ConfID: 6716028 CauseID: 1560039423 OtherID: 1363320044 JT: Japanese Journal of Applied Physics MD: Kanazashi,51,11r,117001,2012,pH Measurement Using Dual-Wavelength Fluorescent Ratio by Two-Photon Excitation for Mitochondrial Activity DOI: 10.1143/JJAP.51.117001(Journal) (6716028-N) DOI: 10.7567/JJAP.51.117001(Journal) ========================================================== Created: 2023-02-01 12:39:32 ConfID: 6716029 CauseID: 1560039425 OtherID: 1363321238 JT: Japanese Journal of Applied Physics MD: Hibino,51,8r,81303,2012,Counter Dipole Layer Formation in Multilayer High-k Gate Stacks DOI: 10.1143/JJAP.51.081303(Journal) (6716029-N) DOI: 10.7567/JJAP.51.081303(Journal) ========================================================== Created: 2023-02-01 12:39:30 ConfID: 6716026 CauseID: 1560039416 OtherID: 1363321048 JT: Japanese Journal of Applied Physics MD: Yamamoto,51,7r,70208,2012,Fabrication of TiN/Ge Contact with Extremely Low Electron Barrier Height DOI: 10.1143/JJAP.51.070208(Journal) (6716026-N) DOI: 10.7567/JJAP.51.070208(Journal) ========================================================== Created: 2023-02-01 12:39:28 ConfID: 6716027 CauseID: 1560039400 OtherID: 1363320653 JT: Japanese Journal of Applied Physics MD: Enomoto,51,4r,46502,2012,Acid Generation Mechanism for Extreme Ultraviolet Resists Containing Pinanediol Monosulfonate Acid Amplifiers: A Pulse Radiolysis Study DOI: 10.1143/JJAP.51.046502(Journal) (6716027-N) DOI: 10.7567/JJAP.51.046502(Journal) ========================================================== Created: 2023-02-01 12:39:28 ConfID: 6716024 CauseID: 1560039403 OtherID: 1363320676 JT: Japanese Journal of Applied Physics MD: Naritsuka,51,4r,48004,2012,X-ray Photoemission Spectroscopy Study of GaAs(111)B Substrate Nitridation using an RF-Radical Source DOI: 10.1143/JJAP.51.048004(Journal) (6716024-N) DOI: 10.7567/JJAP.51.048004(Journal) ========================================================== Created: 2023-02-01 12:39:29 ConfID: 6716025 CauseID: 1560039404 OtherID: 1363320017 JT: Japanese Journal of Applied Physics MD: Dasgupta,51,11r,115503,2012,Growth and Characterization of N-Polar GaN Films on Si(111) by Plasma Assisted Molecular Beam Epitaxy DOI: 10.1143/JJAP.51.115503(Journal) (6716025-N) DOI: 10.7567/JJAP.51.115503(Journal) ========================================================== Created: 2023-02-01 12:38:32 ConfID: 6715974 CauseID: 1560039241 OtherID: 1363319957 JT: Japanese Journal of Applied Physics MD: Kuo,51,10r,105201,2012,Capillary-Driven Dynamics of Water in Hydrophilic Microscope Coverslip Nanochannels DOI: 10.1143/JJAP.51.105201(Journal) (6715974-N) DOI: 10.7567/JJAP.51.105201(Journal) ========================================================== Created: 2023-02-01 12:38:29 ConfID: 6715975 CauseID: 1560039223 OtherID: 1363320021 JT: Japanese Journal of Applied Physics MD: Liu,51,11r,113001,2012,Structures and Dielectric Properties of Pb(Fe1/2Nb1/2)1-xTixO3 Single Crystals DOI: 10.1143/JJAP.51.113001(Journal) (6715975-N) DOI: 10.7567/JJAP.51.113001(Journal) ========================================================== Created: 2023-02-01 12:38:30 ConfID: 6715972 CauseID: 1560039234 OtherID: 1363320620 JT: Japanese Journal of Applied Physics MD: Hata,51,4r,42601,2012,Characterization of Photoexcited Carriers and Thermal Properties of Nanoparticulate TiO2 Film Using Heterodyne Transient Grating Method DOI: 10.1143/JJAP.51.042601(Journal) (6715972-N) DOI: 10.7567/JJAP.51.042601(Journal) ========================================================== Created: 2023-02-01 12:38:31 ConfID: 6715973 CauseID: 1560039238 OtherID: 1363320809 JT: Japanese Journal of Applied Physics MD: Takashima,51,5r,55501,2012,Photocatalytic Activity of WO3 Films Crystallized by Postannealing in Air DOI: 10.1143/JJAP.51.055501(Journal) (6715973-N) DOI: 10.7567/JJAP.51.055501(Journal) ========================================================== Created: 2023-02-01 12:38:27 ConfID: 6715970 CauseID: 1560039227 OtherID: 1363320050 JT: Japanese Journal of Applied Physics MD: Honjo,51,12r,121002,2012,High-Temperature Growth of GaN Single Crystals Using Li-Added Na-Flux Method DOI: 10.1143/JJAP.51.121002(Journal) (6715970-N) DOI: 10.7567/JJAP.51.121002(Journal) ========================================================== Created: 2023-02-01 12:38:30 ConfID: 6715971 CauseID: 1560039233 OtherID: 1363320007 JT: Japanese Journal of Applied Physics MD: Kang,51,11r,111201,2012,Extraction of T-Type Substrate Resistance Components for Radio-Frequency Metal–Oxide–Semiconductor Field-Effect Transistors Based on Two-Port S-Parameter Measurement DOI: 10.1143/JJAP.51.111201(Journal) (6715971-N) DOI: 10.7567/JJAP.51.111201(Journal) ========================================================== Created: 2023-02-01 12:38:26 ConfID: 6715968 CauseID: 1560039225 OtherID: 1363320649 JT: Japanese Journal of Applied Physics MD: Huang,51,4r,47002,2012,Study of Active Micromixer Driven by Electrothermal Force DOI: 10.1143/JJAP.51.047002(Journal) (6715968-N) DOI: 10.7567/JJAP.51.047002(Journal) ========================================================== Created: 2023-02-01 12:38:27 ConfID: 6715969 CauseID: 1560039228 OtherID: 1363320075 JT: Japanese Journal of Applied Physics MD: Suzuki,51,12r,123102,2012,Method for Measuring Anisotropic Electrical Resistivity DOI: 10.1143/JJAP.51.123102(Journal) (6715969-N) DOI: 10.7567/JJAP.51.123102(Journal) ========================================================== Created: 2023-02-01 12:38:41 ConfID: 6715982 CauseID: 1560039269 OtherID: 1363320816 JT: Japanese Journal of Applied Physics MD: Dauendorffer,51,5r,55802,2012,Optical and Transport Anisotropy in Poly(9,9'-dioctyl-fluorene-alt-bithiophene) Films Prepared by Floating Film Transfer Method DOI: 10.1143/JJAP.51.055802(Journal) (6715982-N) DOI: 10.7567/JJAP.51.055802(Journal) ========================================================== Created: 2023-02-01 12:38:42 ConfID: 6715983 CauseID: 1560039270 OtherID: 1363321227 JT: Japanese Journal of Applied Physics MD: Gu,51,8r,80205,2012,InAlAs Graded Metamorphic Buffer with Digital Alloy Intermediate Layers DOI: 10.1143/JJAP.51.080205(Journal) (6715983-N) DOI: 10.7567/JJAP.51.080205(Journal) ========================================================== Created: 2023-02-01 12:38:37 ConfID: 6715980 CauseID: 1560039255 OtherID: 1363319987 JT: Japanese Journal of Applied Physics MD: Shimakawa,51,10r,108003,2012,Photo Induced Negative Bias Instability of Zinc Oxide Thin-Film Transistors DOI: 10.1143/JJAP.51.108003(Journal) (6715980-N) DOI: 10.7567/JJAP.51.108003(Journal) ========================================================== Created: 2023-02-01 12:38:40 ConfID: 6715981 CauseID: 1560039262 OtherID: 1363320647 JT: Japanese Journal of Applied Physics MD: Kim,51,4r,44201,2012,The Static Electricity Resistant Liquid Crystal Display Driven by Fringe Electric Field DOI: 10.1143/JJAP.51.044201(Journal) (6715981-N) DOI: 10.7567/JJAP.51.044201(Journal) ========================================================== Created: 2023-02-01 12:38:39 ConfID: 6715978 CauseID: 1560039252 OtherID: 1363320014 JT: Japanese Journal of Applied Physics MD: Shin,51,11r,111301,2012,Effect of Substrate Temperature on Surface Properties of Ge2Sb2Te5 Film during Chemical Mechanical Polishing DOI: 10.1143/JJAP.51.111301(Journal) (6715978-N) DOI: 10.7567/JJAP.51.111301(Journal) ========================================================== Created: 2023-02-01 12:38:36 ConfID: 6715979 CauseID: 1560039253 OtherID: 1363319965 JT: Japanese Journal of Applied Physics MD: Song,51,10r,105202,2012,Synthesis of Zirconium-Based Material-Coated LiNi0.8Co0.2O2 Cathode Using a New Coating Method DOI: 10.1143/JJAP.51.105202(Journal) (6715979-N) DOI: 10.7567/JJAP.51.105202(Journal) ========================================================== Created: 2023-02-01 12:38:35 ConfID: 6715976 CauseID: 1560039247 OtherID: 1363321064 JT: Japanese Journal of Applied Physics MD: Choi,51,7r,74004,2012,Asymmetrically Doped GaAs/AlGaAs Double-Quantum-Well Structure for Voltage-Tunable Infrared Detection DOI: 10.1143/JJAP.51.074004(Journal) (6715976-N) DOI: 10.7567/JJAP.51.074004(Journal) ========================================================== Created: 2023-02-01 12:38:38 ConfID: 6715977 CauseID: 1560039250 OtherID: 1363320795 JT: Japanese Journal of Applied Physics MD: Tanaka,51,5r,53102,2012,18-GHz, 4.0-aJ/bit Operation of Ultra-Low-Energy Rapid Single-Flux-Quantum Shift Registers DOI: 10.1143/JJAP.51.053102(Journal) (6715977-N) DOI: 10.7567/JJAP.51.053102(Journal) ========================================================== Created: 2023-02-01 12:38:57 ConfID: 6715990 CauseID: 1560039309 OtherID: 1363320818 JT: Japanese Journal of Applied Physics MD: Kuge,51,5r,56402,2012,Discriminated Detection of Nuclear Tracks Recorded on Multilayers of Photographic Emulsions with Different Sensitivities by Color-Development Method DOI: 10.1143/JJAP.51.056402(Journal) (6715990-N) DOI: 10.7567/JJAP.51.056402(Journal) ========================================================== Created: 2023-02-01 12:38:58 ConfID: 6715991 CauseID: 1560039310 OtherID: 1363321232 JT: Japanese Journal of Applied Physics MD: Park,51,8r,81301,2012,Characteristic Variations of Graphene Field-Effect Transistors Induced by CF4 Gas DOI: 10.1143/JJAP.51.081301(Journal) (6715991-N) DOI: 10.7567/JJAP.51.081301(Journal) ========================================================== Created: 2023-02-01 12:38:53 ConfID: 6715988 CauseID: 1560039295 OtherID: 1363320041 JT: Japanese Journal of Applied Physics MD: Neo,51,11r,115601,2012,Necessary Conditions for Two-Lobe Patterns in Field Emission Microscopy DOI: 10.1143/JJAP.51.115601(Journal) (6715988-N) DOI: 10.7567/JJAP.51.115601(Journal) ========================================================== Created: 2023-02-01 12:38:51 ConfID: 6715989 CauseID: 1560039300 OtherID: 1363319975 JT: Japanese Journal of Applied Physics MD: Ueoka,51,11r,110201,2012,Origin of Anisotropic Electrical Properties of 4H-SiC Trench Metal–Oxide–Semiconductor Field-Effect Transistors on Off-Axis Substrates DOI: 10.1143/JJAP.51.110201(Journal) (6715989-N) DOI: 10.7567/JJAP.51.110201(Journal) ========================================================== Created: 2023-02-01 12:38:45 ConfID: 6715986 CauseID: 1560039281 OtherID: 1363320813 JT: Japanese Journal of Applied Physics MD: Hanafusa,51,5r,55502,2012,Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by Sputter Epitaxy DOI: 10.1143/JJAP.51.055502(Journal) (6715986-N) DOI: 10.7567/JJAP.51.055502(Journal) ========================================================== Created: 2023-02-01 12:38:48 ConfID: 6715987 CauseID: 1560039285 OtherID: 1363320018 JT: Japanese Journal of Applied Physics MD: Ito,51,11r,114101,2012,Matching-Circuit-Integrated InGaAsP Schottky Barrier Diode for Zero-Biased Operation in the Sub-Millimeter-Wave Range DOI: 10.1143/JJAP.51.114101(Journal) (6715987-N) DOI: 10.7567/JJAP.51.114101(Journal) ========================================================== Created: 2023-02-01 12:38:49 ConfID: 6715984 CauseID: 1560039279 OtherID: 1363320642 JT: Japanese Journal of Applied Physics MD: Lee,51,4r,45501,2012,Effects of Substrate Temperature on Electrochromic Properties of Cobalt Oxide and Oxyhydroxide Thin Films Prepared by Reactive Sputtering Using O2 and H2O Gases DOI: 10.1143/JJAP.51.045501(Journal) (6715984-N) DOI: 10.7567/JJAP.51.045501(Journal) ========================================================== Created: 2023-02-01 12:38:49 ConfID: 6715985 CauseID: 1560039280 OtherID: 1363320889 JT: Japanese Journal of Applied Physics MD: Asanuma,51,6r,66503,2012,Study on Ozonated Solution Oxidation of Phosphorus Doped Hydrogenated Amorphous Silicon Surface for Cu–Mn Alloy Based Electrodes in Thin Film Transistor DOI: 10.1143/JJAP.51.066503(Journal) (6715985-N) DOI: 10.7567/JJAP.51.066503(Journal) ========================================================== Created: 2023-02-01 12:39:00 ConfID: 6715998 CauseID: 1560039329 OtherID: 1363321078 JT: Japanese Journal of Applied Physics MD: Huang,51,7r,74002,2012,Mid Wavelength Type II InAs/GaSb Superlattice Photodetector Using SiOxNy Passivation DOI: 10.1143/JJAP.51.074002(Journal) (6715998-N) DOI: 10.7567/JJAP.51.074002(Journal) ========================================================== Created: 2023-02-01 12:39:02 ConfID: 6715999 CauseID: 1560039332 OtherID: 1363321223 JT: Japanese Journal of Applied Physics MD: Otsuka,51,8r,80203,2012,Self-Mixing Interference Effect in a Microchip Solid-State Vector Laser DOI: 10.1143/JJAP.51.080203(Journal) (6715999-N) DOI: 10.7567/JJAP.51.080203(Journal) ========================================================== Created: 2023-02-01 12:39:03 ConfID: 6715996 CauseID: 1560039326 OtherID: 1363320814 JT: Japanese Journal of Applied Physics MD: Phan,51,5r,55803,2012,Fabrication and Characterization of an FeBNdNb Magnetic Metallic Glass Thin Film DOI: 10.1143/JJAP.51.055803(Journal) (6715996-N) DOI: 10.7567/JJAP.51.055803(Journal) ========================================================== Created: 2023-02-01 12:39:01 ConfID: 6715997 CauseID: 1560039330 OtherID: 1363320793 JT: Japanese Journal of Applied Physics MD: Krajangsang,51,5r,51101,2012,Quantitative Analysis of Surface Morphology of Boron-Doped Zinc Oxide for Microcrystalline Silicon Solar Cells DOI: 10.1143/JJAP.51.051101(Journal) (6715997-N) DOI: 10.7567/JJAP.51.051101(Journal) ========================================================== Created: 2023-02-01 12:38:56 ConfID: 6715994 CauseID: 1560039315 OtherID: 1363321072 JT: Japanese Journal of Applied Physics MD: Omiya,51,7r,75501,2012,Morphological Study on Porous Silicon Carbide Membrane Fabricated by Double-Step Electrochemical Etching DOI: 10.1143/JJAP.51.075501(Journal) (6715994-N) DOI: 10.7567/JJAP.51.075501(Journal) ========================================================== Created: 2023-02-01 12:39:03 ConfID: 6715995 CauseID: 1560039325 OtherID: 1363321235 JT: Japanese Journal of Applied Physics MD: Saitou,51,8r,82201,2012,Birefringence Polarimeter Using Dual LiNbO3 Electrooptic Crystal Modulators DOI: 10.1143/JJAP.51.082201(Journal) (6715995-N) DOI: 10.7567/JJAP.51.082201(Journal) ========================================================== Created: 2023-02-01 12:38:58 ConfID: 6715992 CauseID: 1560039313 OtherID: 1363320790 JT: Japanese Journal of Applied Physics MD: Yagi,51,5r,51001,2012,Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates DOI: 10.1143/JJAP.51.051001(Journal) (6715992-N) DOI: 10.7567/JJAP.51.051001(Journal) ========================================================== Created: 2023-02-01 12:38:59 ConfID: 6715993 CauseID: 1560039314 OtherID: 1363320800 JT: Japanese Journal of Applied Physics MD: Kajino,51,5r,53101,2012,Ratchet Effect of Single Vortex Motion in Superconducting Asymmetrical Nanobridges DOI: 10.1143/JJAP.51.053101(Journal) (6715993-N) DOI: 10.7567/JJAP.51.053101(Journal) ========================================================== Created: 2023-02-01 12:38:00 ConfID: 6715942 CauseID: 1560039142 OtherID: 1363319967 JT: Japanese Journal of Applied Physics MD: Yin,51,10r,104202,2012,Low-Reset-Current Ring-Confined-Chalcogenide Phase Change Memory DOI: 10.1143/JJAP.51.104202(Journal) (6715942-N) DOI: 10.7567/JJAP.51.104202(Journal) ========================================================== Created: 2023-02-01 12:37:59 ConfID: 6715943 CauseID: 1560039134 OtherID: 1363321055 JT: Japanese Journal of Applied Physics MD: Yang,51,7r,70201,2012,Site-Selective Self-Assembly of Fullerene Nanoparticles on Amphiphilic Block Copolymer Thin Film from Water Suspension DOI: 10.1143/JJAP.51.070201(Journal) (6715943-N) DOI: 10.7567/JJAP.51.070201(Journal) ========================================================== Created: 2023-02-01 12:37:56 ConfID: 6715940 CauseID: 1560039131 OtherID: 1363320622 JT: Japanese Journal of Applied Physics MD: Xu,51,4r,42301,2012,Optimization of the Dielectric Layer Thickness for Surface-Plasmon-Induced Light Absorption for Silicon Solar Cells DOI: 10.1143/JJAP.51.042301(Journal) (6715940-N) DOI: 10.7567/JJAP.51.042301(Journal) ========================================================== Created: 2023-02-01 12:37:57 ConfID: 6715941 CauseID: 1560039133 OtherID: 1363319964 JT: Japanese Journal of Applied Physics MD: Zhong,51,10r,105001,2012,Fabrication of ZnS0.6Se0.4 Nanowires Using ZnS Nanowires as an In-situ Template DOI: 10.1143/JJAP.51.105001(Journal) (6715941-N) DOI: 10.7567/JJAP.51.105001(Journal) ========================================================== Created: 2023-02-01 12:37:55 ConfID: 6715938 CauseID: 1560039128 OtherID: 1363320877 JT: Japanese Journal of Applied Physics MD: Hayakawa,51,6r,61301,2012,Distribution of Phosphorus Atoms and Carrier Concentrations in Single-Crystal Silicon Doped by Catalytically Generated Phosphorous Radicals DOI: 10.1143/JJAP.51.061301(Journal) (6715938-N) DOI: 10.7567/JJAP.51.061301(Journal) ========================================================== Created: 2023-02-01 12:37:55 ConfID: 6715939 CauseID: 1560039129 OtherID: 1363320655 JT: Japanese Journal of Applied Physics MD: Kishii,51,4r,46506,2012,Mn2O3 Slurry Achieving Reduction of Slurry Waste DOI: 10.1143/JJAP.51.046506(Journal) (6715939-N) DOI: 10.7567/JJAP.51.046506(Journal) ========================================================== Created: 2023-02-01 12:37:50 ConfID: 6715936 CauseID: 1560039114 OtherID: 1363319968 JT: Japanese Journal of Applied Physics MD: Chang,51,10r,105102,2012,Graphene with Electrochemical Ionic-Liquid Assistance Synthesis to Explore the Metal Adsorption Ability and the High Electrical Conductivity in Graphene/Epoxy Composite DOI: 10.1143/JJAP.51.105102(Journal) (6715936-N) DOI: 10.7567/JJAP.51.105102(Journal) ========================================================== Created: 2023-02-01 12:37:59 ConfID: 6715937 CauseID: 1560039127 OtherID: 1363319945 JT: Japanese Journal of Applied Physics MD: Mohammadi,51,10r,101201,2012,Performance Improvement of Partially Silicon-on-Insulator Lateral Double-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors Using Doping-Engineered Drift Region DOI: 10.1143/JJAP.51.101201(Journal) (6715937-N) DOI: 10.7567/JJAP.51.101201(Journal) ========================================================== Created: 2023-02-01 12:38:06 ConfID: 6715950 CauseID: 1560039161 OtherID: 1363321077 JT: Japanese Journal of Applied Physics MD: Takahashi,51,7r,75201,2012,Fabrication and Characterization of Decanedithiol Molecular Junction Using Nanogap Electrodes DOI: 10.1143/JJAP.51.075201(Journal) (6715950-N) DOI: 10.7567/JJAP.51.075201(Journal) ========================================================== Created: 2023-02-01 12:38:07 ConfID: 6715951 CauseID: 1560039162 OtherID: 1363320652 JT: Japanese Journal of Applied Physics MD: Matsuba,51,4r,46402,2012,Mean Transverse Energy Measurement of Negative Electron Affinity GaAs-Based Photocathode DOI: 10.1143/JJAP.51.046402(Journal) (6715951-N) DOI: 10.7567/JJAP.51.046402(Journal) ========================================================== Created: 2023-02-01 12:38:04 ConfID: 6715948 CauseID: 1560039150 OtherID: 1363320876 JT: Japanese Journal of Applied Physics MD: Ino,51,6r,61602,2012,Electrospray Deposition of Poly(3-hexylthiophene) Films for Crystalline Silicon/Organic Hybrid Junction Solar Cells DOI: 10.1143/JJAP.51.061602(Journal) (6715948-N) DOI: 10.7567/JJAP.51.061602(Journal) ========================================================== Created: 2023-02-01 12:37:52 ConfID: 6715949 CauseID: 1560039117 OtherID: 1363319930 JT: Japanese Journal of Applied Physics MD: Qin,51,10r,102704,2012,Use of Fringe-Resolved Autocorrelation for the Diagnosis of the Wavelength Stability of a Free Electron Laser DOI: 10.1143/JJAP.51.102704(Journal) (6715949-N) DOI: 10.7567/JJAP.51.102704(Journal) ========================================================== Created: 2023-02-01 12:38:02 ConfID: 6715946 CauseID: 1560039146 OtherID: 1363320788 JT: Japanese Journal of Applied Physics MD: Kim,51,5r,50204,2012,10 Gbps Colorless Optical Source in Wavelength-Division Multiplexed Passive Optical Networks for Monolithic Integration of Deep-Ridge Waveguide Electroabsorption Modulator with Planar Buried-Heterostructure Semiconductor Optical Amplifier DOI: 10.1143/JJAP.51.050204(Journal) (6715946-N) DOI: 10.7567/JJAP.51.050204(Journal) ========================================================== Created: 2023-02-01 12:38:02 ConfID: 6715947 CauseID: 1560039145 OtherID: 1363320640 JT: Japanese Journal of Applied Physics MD: Cho,51,4r,45001,2012,Fast Responsive Gas Sensor of Vertically Aligned Fluorine-Doped Tin Oxide Nanorod Thin Film DOI: 10.1143/JJAP.51.045001(Journal) (6715947-N) DOI: 10.7567/JJAP.51.045001(Journal) ========================================================== Created: 2023-02-01 12:38:00 ConfID: 6715944 CauseID: 1560039141 OtherID: 1363320061 JT: Japanese Journal of Applied Physics MD: Matsushita,51,12r,121802,2012,Valence States of Rare-Earth Ions and Band Gaps in RBiBa2O6 (R = La, Ce, Pr, Nd, Sm, Gd, Eu, and Dy) Photocatalysts DOI: 10.1143/JJAP.51.121802(Journal) (6715944-N) DOI: 10.7567/JJAP.51.121802(Journal) ========================================================== Created: 2023-02-01 12:38:01 ConfID: 6715945 CauseID: 1560039143 OtherID: 1363321262 JT: Japanese Journal of Applied Physics MD: Ono,51,8r,82501,2012,Intensity and Polarization Modulation Holographic Recordings and Vector Holograms Using Inhomogeneous Polarized Beams DOI: 10.1143/JJAP.51.082501(Journal) (6715945-N) DOI: 10.7567/JJAP.51.082501(Journal) ========================================================== Created: 2023-02-01 12:38:18 ConfID: 6715958 CauseID: 1560039195 OtherID: 1363320001 JT: Japanese Journal of Applied Physics MD: Feng,51,11r,112001,2012,Unidirectional Light Beam Splitter Based on the Square-Lattice Photonic Crystal Heterojunctions DOI: 10.1143/JJAP.51.112001(Journal) (6715958-N) DOI: 10.7567/JJAP.51.112001(Journal) ========================================================== Created: 2023-02-01 12:38:20 ConfID: 6715959 CauseID: 1560039206 OtherID: 1363320802 JT: Japanese Journal of Applied Physics MD: Park,51,5r,52402,2012,Application of a Continued-Fraction-Based Theory to Line-Profile in Mn-Doped GaN Film DOI: 10.1143/JJAP.51.052402(Journal) (6715959-N) DOI: 10.7567/JJAP.51.052402(Journal) ========================================================== Created: 2023-02-01 12:38:17 ConfID: 6715956 CauseID: 1560039193 OtherID: 1363320024 JT: Japanese Journal of Applied Physics MD: Lu,51,11r,115502,2012,Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal–Organic Chemical Vapor Deposition Using a Graded Growth Strategy DOI: 10.1143/JJAP.51.115502(Journal) (6715956-N) DOI: 10.7567/JJAP.51.115502(Journal) ========================================================== Created: 2023-02-01 12:38:17 ConfID: 6715957 CauseID: 1560039192 OtherID: 1363320009 JT: Japanese Journal of Applied Physics MD: Fatah,51,11r,110203,2012,Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz DOI: 10.1143/JJAP.51.110203(Journal) (6715957-N) DOI: 10.7567/JJAP.51.110203(Journal) ========================================================== Created: 2023-02-01 12:38:13 ConfID: 6715954 CauseID: 1560039177 OtherID: 1363319969 JT: Japanese Journal of Applied Physics MD: Yu,51,10r,105501,2012,Crystal Growth of Indium-Doped Czochralski Silicon for Photovoltaic Application DOI: 10.1143/JJAP.51.105501(Journal) (6715954-N) DOI: 10.7567/JJAP.51.105501(Journal) ========================================================== Created: 2023-02-01 12:38:11 ConfID: 6715955 CauseID: 1560039176 OtherID: 1363320660 JT: Japanese Journal of Applied Physics MD: Yamamoto,51,4r,46503,2012,Nanoimprint Mold for 2.5 Tbit/in.2 Directed Self-Assembly Bit Patterned Media with Phase Servo Pattern DOI: 10.1143/JJAP.51.046503(Journal) (6715955-N) DOI: 10.7567/JJAP.51.046503(Journal) ========================================================== Created: 2023-02-01 12:38:07 ConfID: 6715952 CauseID: 1560039163 OtherID: 1363319962 JT: Japanese Journal of Applied Physics MD: Watanabe,51,10r,105103,2012,Effect of Pressure on the Electrical Resistance of Individual Boron-Doped Carbon Nanotubes DOI: 10.1143/JJAP.51.105103(Journal) (6715952-N) DOI: 10.7567/JJAP.51.105103(Journal) ========================================================== Created: 2023-02-01 12:38:10 ConfID: 6715953 CauseID: 1560039172 OtherID: 1363320896 JT: Japanese Journal of Applied Physics MD: Mashiko,51,6r,67101,2012,Parametric Study on the Physical Action of Steam–Water Mixture Jet: Removal of Photoresist Film from Silicon Wafer Surfaces DOI: 10.1143/JJAP.51.067101(Journal) (6715953-N) DOI: 10.7567/JJAP.51.067101(Journal) ========================================================== Created: 2023-02-01 12:38:28 ConfID: 6715966 CauseID: 1560039222 OtherID: 1363321061 JT: Japanese Journal of Applied Physics MD: Zhang,51,7r,70204,2012,Flexible White Organic Light-Emitting Diodes Based on Single-Walled Carbon Nanotube:Poly(3,4-ethylenedioxythiophene)/Poly(styrene sulfonate) Transparent Conducting Film DOI: 10.1143/JJAP.51.070204(Journal) (6715966-N) DOI: 10.7567/JJAP.51.070204(Journal) ========================================================== Created: 2023-02-01 12:38:29 ConfID: 6715967 CauseID: 1560039224 OtherID: 1363320664 JT: Japanese Journal of Applied Physics MD: Akiyama,51,4r,48002,2012,Reconstructions on AlN Nonpolar Surfaces in the Presence of Hydrogen DOI: 10.1143/JJAP.51.048002(Journal) (6715967-N) DOI: 10.7567/JJAP.51.048002(Journal) ========================================================== Created: 2023-02-01 12:38:22 ConfID: 6715964 CauseID: 1560039215 OtherID: 1363320665 JT: Japanese Journal of Applied Physics MD: Kusano,51,4r,48001,2012,Density Dependence of the Longitudinal Diffusion Coefficient of Electrons in Xenon DOI: 10.1143/JJAP.51.048001(Journal) (6715964-N) DOI: 10.7567/JJAP.51.048001(Journal) ========================================================== Created: 2023-02-01 12:38:28 ConfID: 6715965 CauseID: 1560039221 OtherID: 1363320615 JT: Japanese Journal of Applied Physics MD: Takehara,51,4r,42101,2012,Indium–Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes DOI: 10.1143/JJAP.51.042101(Journal) (6715965-N) DOI: 10.7567/JJAP.51.042101(Journal) ========================================================== Created: 2023-02-01 12:38:22 ConfID: 6715962 CauseID: 1560039214 OtherID: 1363320779 JT: Japanese Journal of Applied Physics MD: Ueda,51,5r,50206,2012,Ultrasensitive Far-Infrared Phototransistors Fabricated in Superlattice Structures DOI: 10.1143/JJAP.51.050206(Journal) (6715962-N) DOI: 10.7567/JJAP.51.050206(Journal) ========================================================== Created: 2023-02-01 12:38:25 ConfID: 6715963 CauseID: 1560039219 OtherID: 1363320782 JT: Japanese Journal of Applied Physics MD: Song,51,5r,51002,2012,A Comparative Study on the Optical and Electrical Properties of Si-Doped Polar and Nonpolar GaN DOI: 10.1143/JJAP.51.051002(Journal) (6715963-N) DOI: 10.7567/JJAP.51.051002(Journal) ========================================================== Created: 2023-02-01 12:38:20 ConfID: 6715960 CauseID: 1560039207 OtherID: 1363320049 JT: Japanese Journal of Applied Physics MD: Lim,51,11r,115801,2012,Mechanical Flexibility of ZnSnO/Ag/ZnSnO Films Grown by Roll-to-Roll Sputtering for Flexible Organic Photovoltaics DOI: 10.1143/JJAP.51.115801(Journal) (6715960-N) DOI: 10.7567/JJAP.51.115801(Journal) ========================================================== Created: 2023-02-01 12:38:24 ConfID: 6715961 CauseID: 1560039210 OtherID: 1363320864 JT: Japanese Journal of Applied Physics MD: Kitagawa,51,6r,62201,2012,Design of Two-Dimensional Low-Dielectric Photonic Crystal and Its Terahertz Waveguide Application DOI: 10.1143/JJAP.51.062201(Journal) (6715961-N) DOI: 10.7567/JJAP.51.062201(Journal) ========================================================== Created: 2023-02-01 12:37:14 ConfID: 6715910 CauseID: 1560038994 OtherID: 1363319944 JT: Japanese Journal of Applied Physics MD: Kim,51,10r,102703,2012,Femtosecond Laser Micro- and Nanopatterning of the Fused Silica Tube to Enhance Capillary Effect DOI: 10.1143/JJAP.51.102703(Journal) (6715910-N) DOI: 10.7567/JJAP.51.102703(Journal) ========================================================== Created: 2023-02-01 12:37:11 ConfID: 6715911 CauseID: 1560038995 OtherID: 1363320872 JT: Japanese Journal of Applied Physics MD: Kuwatsuka,51,6r,62701,2012,Numerical Simulation of Nonlinear Optical Effects in Frequency-Modulation Mode-Locked Semiconductor Laser Diodes DOI: 10.1143/JJAP.51.062701(Journal) (6715911-N) DOI: 10.7567/JJAP.51.062701(Journal) ========================================================== Created: 2023-02-01 12:37:07 ConfID: 6715908 CauseID: 1560038984 OtherID: 1363321425 JT: Japanese Journal of Applied Physics MD: Isshiki,51,9r,95801,2012,Improving Mobility of F-Doped SnO2 Thin Films by Introducing Temperature Gradient during Low-Pressure Chemical Vapor Deposition DOI: 10.1143/JJAP.51.095801(Journal) (6715908-N) DOI: 10.7567/JJAP.51.095801(Journal) ========================================================== Created: 2023-02-01 12:37:10 ConfID: 6715909 CauseID: 1560038992 OtherID: 1363320539 JT: Japanese Journal of Applied Physics MD: Kim,51,3r,34101,2012,Normally-Off AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistor with Recessed Gate and p-GaN Back-Barrier DOI: 10.1143/JJAP.51.034101(Journal) (6715909-N) DOI: 10.7567/JJAP.51.034101(Journal) ========================================================== Created: 2023-02-01 12:37:06 ConfID: 6715906 CauseID: 1560038981 OtherID: 1363321392 JT: Japanese Journal of Applied Physics MD: Liu,51,9r,94303,2012,Elastic Transient Energy Transport and Energy Balance in a Single-Level Quantum Dot System DOI: 10.1143/JJAP.51.094303(Journal) (6715906-N) DOI: 10.7567/JJAP.51.094303(Journal) ========================================================== Created: 2023-02-01 12:37:07 ConfID: 6715907 CauseID: 1560038983 OtherID: 1363320547 JT: Japanese Journal of Applied Physics MD: Arase,51,3r,36501,2012,Fluidic Self-Assembly of Microstructures Using a Blade-Coating Technique: Influence of Volume of Water Droplets on Probability of Microstructure Placement DOI: 10.1143/JJAP.51.036501(Journal) (6715907-N) DOI: 10.7567/JJAP.51.036501(Journal) ========================================================== Created: 2023-02-01 12:37:01 ConfID: 6715904 CauseID: 1560038966 OtherID: 1363320666 JT: Japanese Journal of Applied Physics MD: Ogura,51,4r,48003,2012,Complementary Characterization of Radioactivity Produced by Repetitive Laser-Driven Proton Beam Using Shot-to-Shot Proton Spectral Measurement and Direct Activation Measurement DOI: 10.1143/JJAP.51.048003(Journal) (6715904-N) DOI: 10.7567/JJAP.51.048003(Journal) ========================================================== Created: 2023-02-01 12:37:05 ConfID: 6715905 CauseID: 1560038976 OtherID: 1363320518 JT: Japanese Journal of Applied Physics MD: Ryuzaki,51,3r,31501,2012,Low-Shrinkage Spin-On Glass for Low Parasitic Capacitance Gap-Filling Process in Advanced Memory Devices DOI: 10.1143/JJAP.51.031501(Journal) (6715905-N) DOI: 10.7567/JJAP.51.031501(Journal) ========================================================== Created: 2023-02-01 12:37:16 ConfID: 6715918 CauseID: 1560039011 OtherID: 1363320524 JT: Japanese Journal of Applied Physics MD: Jiang,51,3r,32101,2012,Voltage Reduction and Lifetime Elongation of Organic Light-Emitting Diodes Using Photopolymerization for Fluorizated Polyxylylene Hole Injection Layer DOI: 10.1143/JJAP.51.032101(Journal) (6715918-N) DOI: 10.7567/JJAP.51.032101(Journal) ========================================================== Created: 2023-02-01 12:37:16 ConfID: 6715919 CauseID: 1560039013 OtherID: 1363320023 JT: Japanese Journal of Applied Physics MD: Afzal,51,11r,114301,2012,Analytical Modeling of Read Margin Probability Distribution Function of Static Random Access Memory Cells in Presence of Process Variations and Negative Bias Temperature Instability Effect DOI: 10.1143/JJAP.51.114301(Journal) (6715919-N) DOI: 10.7567/JJAP.51.114301(Journal) ========================================================== Created: 2023-02-01 12:37:15 ConfID: 6715916 CauseID: 1560039006 OtherID: 1363319942 JT: Japanese Journal of Applied Physics MD: Yamaguchi,51,10r,101202,2012,Al2O3/3C-SiC/n-Si Nonvolatile Resistance Memory DOI: 10.1143/JJAP.51.101202(Journal) (6715916-N) DOI: 10.7567/JJAP.51.101202(Journal) ========================================================== Created: 2023-02-01 12:37:14 ConfID: 6715917 CauseID: 1560038993 OtherID: 1363320819 JT: Japanese Journal of Applied Physics MD: Terasawa,51,5r,55101,2012,Synthesis of Nitrogen-Doped Graphene by Plasma-Enhanced Chemical Vapor Deposition DOI: 10.1143/JJAP.51.055101(Journal) (6715917-N) DOI: 10.7567/JJAP.51.055101(Journal) ========================================================== Created: 2023-02-01 12:37:13 ConfID: 6715914 CauseID: 1560038999 OtherID: 1363319924 JT: Japanese Journal of Applied Physics MD: Sekitani,51,10r,100001,2012,Ambient Electronics DOI: 10.1143/JJAP.51.100001(Journal) (6715914-N) DOI: 10.7567/JJAP.51.100001(Journal) ========================================================== Created: 2023-02-01 12:37:15 ConfID: 6715915 CauseID: 1560039005 OtherID: 1363320838 JT: Japanese Journal of Applied Physics MD: Momose,51,5r,56502,2012,Ultra-Conformal Metal Coating on High-Aspect-Ratio Three-Dimensional Structures Using Supercritical Fluid: Controlled Selectivity/Non-Selectivity DOI: 10.1143/JJAP.51.056502(Journal) (6715915-N) DOI: 10.7567/JJAP.51.056502(Journal) ========================================================== Created: 2023-02-01 12:37:11 ConfID: 6715912 CauseID: 1560038996 OtherID: 1363319941 JT: Japanese Journal of Applied Physics MD: Liu,51,10r,101101,2012,Improvement of Reliability Characteristics of TiO2-Based Resistive Switching Memory Device with an Inserted ZnO Layer DOI: 10.1143/JJAP.51.101101(Journal) (6715912-N) DOI: 10.7567/JJAP.51.101101(Journal) ========================================================== Created: 2023-02-01 12:37:12 ConfID: 6715913 CauseID: 1560038997 OtherID: 1363320602 JT: Japanese Journal of Applied Physics MD: Seong,51,4r,41102,2012,Bipolar Resistive Switching Behavior of a Pt/NiO/TiN Device for Nonvolatile Memory Applications DOI: 10.1143/JJAP.51.041102(Journal) (6715913-N) DOI: 10.7567/JJAP.51.041102(Journal) ========================================================== Created: 2023-02-01 12:37:39 ConfID: 6715926 CauseID: 1560039069 OtherID: 1363321411 JT: Japanese Journal of Applied Physics MD: Baba,51,9r,98003,2012,Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4 µm on Si(111) DOI: 10.1143/JJAP.51.098003(Journal) (6715926-N) DOI: 10.7567/JJAP.51.098003(Journal) ========================================================== Created: 2023-02-01 12:37:37 ConfID: 6715927 CauseID: 1560039073 OtherID: 1363321418 JT: Japanese Journal of Applied Physics MD: Lim,51,9r,96501,2012,Fabrication of a Touch Sensor for Flat Panel Displays Using Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) with Dimethylsulfoxide by Soft Lithography DOI: 10.1143/JJAP.51.096501(Journal) (6715927-N) DOI: 10.7567/JJAP.51.096501(Journal) ========================================================== Created: 2023-02-01 12:37:26 ConfID: 6715924 CauseID: 1560039038 OtherID: 1363320604 JT: Japanese Journal of Applied Physics MD: Wu,51,4r,41602,2012,Space Charge Trapping and Conduction in Low-Density Polyethylene/Silica Nanocomposite DOI: 10.1143/JJAP.51.041602(Journal) (6715924-N) DOI: 10.7567/JJAP.51.041602(Journal) ========================================================== Created: 2023-02-01 12:37:38 ConfID: 6715925 CauseID: 1560039067 OtherID: 1363320535 JT: Japanese Journal of Applied Physics MD: Kim,51,3r,35502,2012,ZnO Thin Films Grown on Porous Silicon by Plasma-Assisted Molecular Beam Epitaxy DOI: 10.1143/JJAP.51.035502(Journal) (6715925-N) DOI: 10.7567/JJAP.51.035502(Journal) ========================================================== Created: 2023-02-01 12:37:21 ConfID: 6715922 CauseID: 1560039026 OtherID: 1363321378 JT: Japanese Journal of Applied Physics MD: Fukuda,51,9r,90204,2012,Thermal Improvement and Stability of Si3N4/GeNx/p- and n-Ge Structures Prepared by Electron-Cyclotron-Resonance Plasma Nitridation and Sputtering at Room Temperature DOI: 10.1143/JJAP.51.090204(Journal) (6715922-N) DOI: 10.7567/JJAP.51.090204(Journal) ========================================================== Created: 2023-02-01 12:37:22 ConfID: 6715923 CauseID: 1560039027 OtherID: 1363319933 JT: Japanese Journal of Applied Physics MD: Ohuchi,51,10r,101302,2012,Accurate Method of Measuring Specific Contact Resistivity of Interface between Silicide and Silicon and Its Application DOI: 10.1143/JJAP.51.101302(Journal) (6715923-N) DOI: 10.7567/JJAP.51.101302(Journal) ========================================================== Created: 2023-02-01 12:37:20 ConfID: 6715920 CauseID: 1560039020 OtherID: 1363320613 JT: Japanese Journal of Applied Physics MD: Shuto,51,4r,40212,2012,Evaluation and Control of Break-Even Time of Nonvolatile Static Random Access Memory Based on Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions DOI: 10.1143/JJAP.51.040212(Journal) (6715920-N) DOI: 10.7567/JJAP.51.040212(Journal) ========================================================== Created: 2023-02-01 12:37:23 ConfID: 6715921 CauseID: 1560039022 OtherID: 1363320610 JT: Japanese Journal of Applied Physics MD: Hirano,51,4r,41105,2012,Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks DOI: 10.1143/JJAP.51.041105(Journal) (6715921-N) DOI: 10.7567/JJAP.51.041105(Journal) ========================================================== Created: 2023-02-01 12:37:48 ConfID: 6715934 CauseID: 1560039100 OtherID: 1363320594 JT: Japanese Journal of Applied Physics MD: Nakahama,51,4r,40208,2012,On-Chip High-Resolution Beam Scanner Based on Bragg Reflector Slow-Light Waveguide Amplifier and Tunable Micro-Electro-Mechanical System Vertical Cavity Surface Emitting Laser DOI: 10.1143/JJAP.51.040208(Journal) (6715934-N) DOI: 10.7567/JJAP.51.040208(Journal) ========================================================== Created: 2023-02-01 12:37:49 ConfID: 6715935 CauseID: 1560039103 OtherID: 1363320821 JT: Japanese Journal of Applied Physics MD: Jou,51,5r,55701,2012,Influence of Interfacial Tantalum Oxynitride on Resistive Switching of Cu/Cu–SiO2/TaN DOI: 10.1143/JJAP.51.055701(Journal) (6715935-N) DOI: 10.7567/JJAP.51.055701(Journal) ========================================================== Created: 2023-02-01 12:37:42 ConfID: 6715932 CauseID: 1560039085 OtherID: 1363320625 JT: Japanese Journal of Applied Physics MD: Lee,51,4r,44101,2012,Intelligent Ultraviolet Sensor Composed of GaN-Based Photodiode and N-Channel Metal Oxide Semiconductor Si-Charge Transfer Type Signal Processor DOI: 10.1143/JJAP.51.044101(Journal) (6715932-N) DOI: 10.7567/JJAP.51.044101(Journal) ========================================================== Created: 2023-02-01 12:37:46 ConfID: 6715933 CauseID: 1560039097 OtherID: 1363320616 JT: Japanese Journal of Applied Physics MD: Iijima,51,4r,44102,2012,Electron Mobility Limited by Remote Charge Scattering in Thin (100)- and (110)-Oriented Silicon Body Double-Gated Metal–Oxide–Semiconductor Field-Effect Transistors with High-k Gate Dielectrics DOI: 10.1143/JJAP.51.044102(Journal) (6715933-N) DOI: 10.7567/JJAP.51.044102(Journal) ========================================================== Created: 2023-02-01 12:37:41 ConfID: 6715930 CauseID: 1560039084 OtherID: 1363320832 JT: Japanese Journal of Applied Physics MD: Tsui,51,5r,57001,2012,Effect of Frequency on the Change in Backscattered Ultrasound Energy as a Function of Temperature DOI: 10.1143/JJAP.51.057001(Journal) (6715930-N) DOI: 10.7567/JJAP.51.057001(Journal) ========================================================== Created: 2023-02-01 12:37:41 ConfID: 6715931 CauseID: 1560039083 OtherID: 1363319943 JT: Japanese Journal of Applied Physics MD: Wang,51,10r,102401,2012,Observations and Analysis of Relationship between Water Vapor and Aerosols by Using Raman Lidar DOI: 10.1143/JJAP.51.102401(Journal) (6715931-N) DOI: 10.7567/JJAP.51.102401(Journal) ========================================================== Created: 2023-02-01 12:37:40 ConfID: 6715928 CauseID: 1560039080 OtherID: 1363320621 JT: Japanese Journal of Applied Physics MD: Liou,51,4r,42501,2012,Implementation of Universal Broadband Visible Antireflection Coating for Various Glass Substrates Using Ion-Assisted Deposition DOI: 10.1143/JJAP.51.042501(Journal) (6715928-N) DOI: 10.7567/JJAP.51.042501(Journal) ========================================================== Created: 2023-02-01 12:37:44 ConfID: 6715929 CauseID: 1560039082 OtherID: 1363320636 JT: Japanese Journal of Applied Physics MD: Maeyoshi,51,4r,45201,2012,Fabrication of Poly(9,9'-dioctylfluorene)-Based Nano- and Microstructures by Proton Beam Writing DOI: 10.1143/JJAP.51.045201(Journal) (6715929-N) DOI: 10.7567/JJAP.51.045201(Journal) ========================================================== Created: 2023-02-01 12:41:40 ConfID: 6716134 CauseID: 1560039755 OtherID: 1363319932 JT: Japanese Journal of Applied Physics MD: Hayakawa,51,10r,101301,2012,Effect of Radical-Doped n+ Back Surface Field Layers on the Effective Minority Carrier Lifetimes of Crystalline Silicon with Amorphous Silicon Passivation Layers Deposited by Catalytic Chemical Vapor Deposition DOI: 10.1143/JJAP.51.101301(Journal) (6716134-N) DOI: 10.7567/JJAP.51.101301(Journal) ========================================================== Created: 2023-02-01 12:41:40 ConfID: 6716135 CauseID: 1560039756 OtherID: 1363320837 JT: Japanese Journal of Applied Physics MD: Lin,51,5s,505,2012,A Thermally-Reliable, Low-Resistivity Cu(Ir) and Cu(IrN) Alloy Films for Barrierless Cu Metallization DOI: 10.1143/JJAP.51.05EA05(Journal) (6716135-N) DOI: 10.7567/JJAP.51.05EA05(Journal) ========================================================== Created: 2023-02-01 12:41:37 ConfID: 6716132 CauseID: 1560039747 OtherID: 1363321275 JT: Japanese Journal of Applied Physics MD: Kim,51,8r,88003,2012,Enhancement of Active Layer Characteristics with Solvent Spray Annealing Treatment for Organic Solar Cell DOI: 10.1143/JJAP.51.088003(Journal) (6716132-N) DOI: 10.7567/JJAP.51.088003(Journal) ========================================================== Created: 2023-02-01 12:41:44 ConfID: 6716133 CauseID: 1560039754 OtherID: 1363321236 JT: Japanese Journal of Applied Physics MD: Yu,51,8r,80208,2012,InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10° off Misoriented GaAs Substrate DOI: 10.1143/JJAP.51.080208(Journal) (6716133-N) DOI: 10.7567/JJAP.51.080208(Journal) ========================================================== Created: 2023-02-01 12:41:36 ConfID: 6716130 CauseID: 1560039745 OtherID: 1363321045 JT: Japanese Journal of Applied Physics MD: Ou-Yang,51,7r,70209,2012,Optical Second-Harmonic Generation in Hydrogenated Amorphous Silicon Single- and Double-Junction Solar Cells DOI: 10.1143/JJAP.51.070209(Journal) (6716130-N) DOI: 10.7567/JJAP.51.070209(Journal) ========================================================== Created: 2023-02-01 12:41:37 ConfID: 6716131 CauseID: 1560039746 OtherID: 1363321366 JT: Japanese Journal of Applied Physics MD: Sumiya,51,9r,90102,2012,Large Defect-Free Synthetic Type IIa Diamond Crystals Synthesized via High Pressure and High Temperature DOI: 10.1143/JJAP.51.090102(Journal) (6716131-N) DOI: 10.7567/JJAP.51.090102(Journal) ========================================================== Created: 2023-02-01 12:41:32 ConfID: 6716128 CauseID: 1560039733 OtherID: 1363320778 JT: Japanese Journal of Applied Physics MD: Tsai,51,4s,407,2012,Optimization of Amorphous Si/Crystalline Si Heterojunction Solar Cells by BF2 Ion Implantation DOI: 10.1143/JJAP.51.04DP07(Journal) (6716128-N) DOI: 10.7567/JJAP.51.04DP07(Journal) ========================================================== Created: 2023-02-01 12:41:34 ConfID: 6716129 CauseID: 1560039736 OtherID: 1363321281 JT: Japanese Journal of Applied Physics MD: Fukuda,51,8r,86702,2012,Fabrication of Molds with 25-nm Dot-Pitch Pattern by Focused Ion Beam and Reactive Ion Etching for Nanoimprint Using Metallic Glass DOI: 10.1143/JJAP.51.086702(Journal) (6716129-N) DOI: 10.7567/JJAP.51.086702(Journal) ========================================================== Created: 2023-02-01 12:41:45 ConfID: 6716142 CauseID: 1560039769 OtherID: 1363319940 JT: Japanese Journal of Applied Physics MD: Tang,51,10r,102701,2012,Wavelength Switching of Erbium-Doped Fiber Laser by Optical Injection into Overlapped Laser Cavities DOI: 10.1143/JJAP.51.102701(Journal) (6716142-N) DOI: 10.7567/JJAP.51.102701(Journal) ========================================================== Created: 2023-02-01 12:41:49 ConfID: 6716143 CauseID: 1560039768 OtherID: 1363319954 JT: Japanese Journal of Applied Physics MD: Takechi,51,10r,104201,2012,Characterization of Top-Gate Effects in Amorphous InGaZnO4 Thin-Film Transistors Using a Dual-Gate Structure DOI: 10.1143/JJAP.51.104201(Journal) (6716143-N) DOI: 10.7567/JJAP.51.104201(Journal) ========================================================== Created: 2023-02-01 12:41:45 ConfID: 6716140 CauseID: 1560039763 OtherID: 1363319948 JT: Japanese Journal of Applied Physics MD: Kim,51,10r,103001,2012,Magnetic Properties of Amorphous Fe–Si–B Powder Cores Mixed with Pure Iron Powder DOI: 10.1143/JJAP.51.103001(Journal) (6716140-N) DOI: 10.7567/JJAP.51.103001(Journal) ========================================================== Created: 2023-02-01 12:41:48 ConfID: 6716141 CauseID: 1560039765 OtherID: 1363319936 JT: Japanese Journal of Applied Physics MD: Ai,51,10r,103003,2012,Carrier Concentration Effect of Cu-Doped ZnO Films for Room Temperature Ferromagnetism DOI: 10.1143/JJAP.51.103003(Journal) (6716141-N) DOI: 10.7567/JJAP.51.103003(Journal) ========================================================== Created: 2023-02-01 12:41:41 ConfID: 6716138 CauseID: 1560039758 OtherID: 1363320849 JT: Japanese Journal of Applied Physics MD: Hata,51,5s,505,2012,Characterization and Control of Nanostructure Size Variation DOI: 10.1143/JJAP.51.05EC05(Journal) (6716138-N) DOI: 10.7567/JJAP.51.05EC05(Journal) ========================================================== Created: 2023-02-01 12:41:42 ConfID: 6716139 CauseID: 1560039760 OtherID: 1363320696 JT: Japanese Journal of Applied Physics MD: Kodera,51,4s,405,2012,Potential Characterization of Interconnect Corrosion by Kelvin Probe and Electrostatic Force Microscopies DOI: 10.1143/JJAP.51.04DB05(Journal) (6716139-N) DOI: 10.7567/JJAP.51.04DB05(Journal) ========================================================== Created: 2023-02-01 12:41:41 ConfID: 6716136 CauseID: 1560039757 OtherID: 1363321413 JT: Japanese Journal of Applied Physics MD: Takagahara,51,9r,96502,2012,Selective Removal of Dry-Etching Residue Derived from Polymer Sacrificial Layer for Microelectromechanical-System Device Fabrication DOI: 10.1143/JJAP.51.096502(Journal) (6716136-N) DOI: 10.7567/JJAP.51.096502(Journal) ========================================================== Created: 2023-02-01 12:41:35 ConfID: 6716137 CauseID: 1560039743 OtherID: 1363321272 JT: Japanese Journal of Applied Physics MD: Bolotov,51,8r,88005,2012,Spatial Distribution of Photocurrent in Si Stripes under Tilted Illumination Measured by Multimode Scanning Probe Microscopy DOI: 10.1143/JJAP.51.088005(Journal) (6716137-N) DOI: 10.7567/JJAP.51.088005(Journal) ========================================================== Created: 2023-02-01 12:41:59 ConfID: 6716150 CauseID: 1560039793 OtherID: 1363319973 JT: Japanese Journal of Applied Physics MD: Kim,51,10r,106201,2012,Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Cl2/Ar Inductively Coupled Plasma DOI: 10.1143/JJAP.51.106201(Journal) (6716150-N) DOI: 10.7567/JJAP.51.106201(Journal) ========================================================== Created: 2023-02-01 12:41:59 ConfID: 6716151 CauseID: 1560039794 OtherID: 1363320712 JT: Japanese Journal of Applied Physics MD: Ansari,51,4s,403,2012,Experimental Analysis of Within-Die Process Variation in 65 and 180 nm Complementary Metal–Oxide–Semiconductor Technology Including Its Distance Dependences DOI: 10.1143/JJAP.51.04DE03(Journal) (6716151-N) DOI: 10.7567/JJAP.51.04DE03(Journal) ========================================================== Created: 2023-02-01 12:41:38 ConfID: 6716148 CauseID: 1560039748 OtherID: 1363321395 JT: Japanese Journal of Applied Physics MD: Yoon,51,9r,93001,2012,Magnetoelectric Coupling in Tb0.3Dy0.7Fe1.92/PbZr0.3Ti0.7O3 Bilayer Thin Films DOI: 10.1143/JJAP.51.093001(Journal) (6716148-N) DOI: 10.7567/JJAP.51.093001(Journal) ========================================================== Created: 2023-02-01 12:41:55 ConfID: 6716149 CauseID: 1560039789 OtherID: 1363321403 JT: Japanese Journal of Applied Physics MD: Chu,51,9r,93006,2012,Spin Polarization of Alternate Monatomic Epitaxial [Fe/Co]n Superlattice DOI: 10.1143/JJAP.51.093006(Journal) (6716149-N) DOI: 10.7567/JJAP.51.093006(Journal) ========================================================== Created: 2023-02-01 12:41:54 ConfID: 6716146 CauseID: 1560039782 OtherID: 1363321391 JT: Japanese Journal of Applied Physics MD: Song,51,9r,90205,2012,Enforcement of Levitation Force by Capturing Magnetic Flux between YBa2Cu3O7-x Superconductor Bulk and Permanent Magnet DOI: 10.1143/JJAP.51.090205(Journal) (6716146-N) DOI: 10.7567/JJAP.51.090205(Journal) ========================================================== Created: 2023-02-01 12:41:50 ConfID: 6716147 CauseID: 1560039783 OtherID: 1363319931 JT: Japanese Journal of Applied Physics MD: Minagawa,51,10r,101601,2012,Mechanism behind Improved Apparent Field-Effect Mobility in Pentacene Thin-Film Transistors with Thin Molybdenum Trioxide Layer DOI: 10.1143/JJAP.51.101601(Journal) (6716147-N) DOI: 10.7567/JJAP.51.101601(Journal) ========================================================== Created: 2023-02-01 12:41:47 ConfID: 6716144 CauseID: 1560039773 OtherID: 1363319991 JT: Japanese Journal of Applied Physics MD: Terada,51,10r,106602,2012,Construction of Two-Axis Acceleration Sensor Using a Cross-Coupled Vibrator DOI: 10.1143/JJAP.51.106602(Journal) (6716144-N) DOI: 10.7567/JJAP.51.106602(Journal) ========================================================== Created: 2023-02-01 12:41:53 ConfID: 6716145 CauseID: 1560039777 OtherID: 1363320977 JT: Japanese Journal of Applied Physics MD: Huda,51,6s,610,2012,Fabrication of 5-nm-Sized Nanodots Using Self-Assembly of Polystyrene–Poly(dimethylsiloxane) DOI: 10.1143/JJAP.51.06FF10(Journal) (6716145-N) DOI: 10.7567/JJAP.51.06FF10(Journal) ========================================================== Created: 2023-02-01 12:42:07 ConfID: 6716158 CauseID: 1560039818 OtherID: 1363320010 JT: Japanese Journal of Applied Physics MD: Koyama,51,11r,112102,2012,Investigation of Solution-Processed Organic Light-Emitting Diode Fabrication on Patterned Line Structure Using Bar-Coating Method DOI: 10.1143/JJAP.51.112102(Journal) (6716158-N) DOI: 10.7567/JJAP.51.112102(Journal) ========================================================== Created: 2023-02-01 12:42:08 ConfID: 6716159 CauseID: 1560039821 OtherID: 1363320908 JT: Japanese Journal of Applied Physics MD: Kim,51,6s,602,2012,Sensitivity of Process Parameters on Pattern Formation of Litho–Cure–Litho–Etch Process DOI: 10.1143/JJAP.51.06FC02(Journal) (6716159-N) DOI: 10.7567/JJAP.51.06FC02(Journal) ========================================================== Created: 2023-02-01 12:42:01 ConfID: 6716156 CauseID: 1560039808 OtherID: 1363319961 JT: Japanese Journal of Applied Physics MD: Ichiki,51,10r,106101,2012,Investigation of Three-Dimensional Characteristics of Underwater Streamer Discharges DOI: 10.1143/JJAP.51.106101(Journal) (6716156-N) DOI: 10.7567/JJAP.51.106101(Journal) ========================================================== Created: 2023-02-01 12:42:06 ConfID: 6716157 CauseID: 1560039817 OtherID: 1363320713 JT: Japanese Journal of Applied Physics MD: Kamimura,51,4s,404,2012,0.1 V 13 GHz Transformer-Based Quadrature Voltage-Controlled Oscillator with a Capacitor Coupling Technique in 90 nm Complementary Metal Oxide Semiconductor DOI: 10.1143/JJAP.51.04DE04(Journal) (6716157-N) DOI: 10.7567/JJAP.51.04DE04(Journal) ========================================================== Created: 2023-02-01 12:42:03 ConfID: 6716154 CauseID: 1560039804 OtherID: 1363321408 JT: Japanese Journal of Applied Physics MD: Ngo,51,9r,93002,2012,CoB/Ni-Based Multilayer Nanowire with High-Speed Domain Wall Motion under Low Current Control DOI: 10.1143/JJAP.51.093002(Journal) (6716154-N) DOI: 10.7567/JJAP.51.093002(Journal) ========================================================== Created: 2023-02-01 12:42:04 ConfID: 6716155 CauseID: 1560039805 OtherID: 1363319978 JT: Japanese Journal of Applied Physics MD: Kim,51,10r,107302,2012,Laser-Assisted Control of Electrical Oscillation in VO2 Thin Films Grown by Pulsed Laser Deposition DOI: 10.1143/JJAP.51.107302(Journal) (6716155-N) DOI: 10.7567/JJAP.51.107302(Journal) ========================================================== Created: 2023-02-01 12:41:56 ConfID: 6716152 CauseID: 1560039797 OtherID: 1363321364 JT: Japanese Journal of Applied Physics MD: Takeuchi,51,9r,90113,2012,High-Voltage Vacuum Switch with a Diamond p–i–n Diode Using Negative Electron Affinity DOI: 10.1143/JJAP.51.090113(Journal) (6716152-N) DOI: 10.7567/JJAP.51.090113(Journal) ========================================================== Created: 2023-02-01 12:41:57 ConfID: 6716153 CauseID: 1560039799 OtherID: 1363320842 JT: Japanese Journal of Applied Physics MD: Kim,51,5s,504,2012,Interfacial Adhesion Energy of Ru–AlO Thin Film Deposited by Atomic Layer Deposition between Cu and SiO2: Effect of the Composition of Ru–AlO Thin Film DOI: 10.1143/JJAP.51.05EB04(Journal) (6716153-N) DOI: 10.7567/JJAP.51.05EB04(Journal) ========================================================== Created: 2023-02-01 12:41:03 ConfID: 6716102 CauseID: 1560039660 OtherID: 1363320758 JT: Japanese Journal of Applied Physics MD: Matsui,51,4s,402,2012,Finite-Difference Time-Domain Analysis of Twist-Defect-Mode Lasing Dynamics in Cholesteric Photonic Liquid Crystal DOI: 10.1143/JJAP.51.04DK02(Journal) (6716102-N) DOI: 10.7567/JJAP.51.04DK02(Journal) ========================================================== Created: 2023-02-01 12:41:03 ConfID: 6716103 CauseID: 1560039661 OtherID: 1363320072 JT: Japanese Journal of Applied Physics MD: Fujii,51,12r,124302,2012,Interface State in Metal–Oxide–Nitride–Silicon Memories Induced by Hole Injection during Program/Erase Cycle Stress DOI: 10.1143/JJAP.51.124302(Journal) (6716103-N) DOI: 10.7567/JJAP.51.124302(Journal) ========================================================== Created: 2023-02-01 12:41:00 ConfID: 6716100 CauseID: 1560039654 OtherID: 1363320590 JT: Japanese Journal of Applied Physics MD: Doe,51,3s,302,2012,Size Control of ZnS Nanoparticles by Electro-Spray Deposition Method DOI: 10.1143/JJAP.51.03CC02(Journal) (6716100-N) DOI: 10.7567/JJAP.51.03CC02(Journal) ========================================================== Created: 2023-02-01 12:41:01 ConfID: 6716101 CauseID: 1560039658 OtherID: 1363320089 JT: Japanese Journal of Applied Physics MD: Andreeva,51,12r,126201,2012,Rapid Sterilization of Escherichia coli by Solution Plasma Process DOI: 10.1143/JJAP.51.126201(Journal) (6716101-N) DOI: 10.7567/JJAP.51.126201(Journal) ========================================================== Created: 2023-02-01 12:40:55 ConfID: 6716098 CauseID: 1560039636 OtherID: 1363320734 JT: Japanese Journal of Applied Physics MD: Tani,51,4s,409,2012,Light Detection and Emission in Germanium-on-Insulator Diodes DOI: 10.1143/JJAP.51.04DG09(Journal) (6716098-N) DOI: 10.7567/JJAP.51.04DG09(Journal) ========================================================== Created: 2023-02-01 12:40:58 ConfID: 6716099 CauseID: 1560039645 OtherID: 1363321224 JT: Japanese Journal of Applied Physics MD: Ho,51,8r,82401,2012,A Minimally Destructive Multi-Element Sensing Technique for Metal Alloys by Laser-Induced Breakdown Spectroscopy DOI: 10.1143/JJAP.51.082401(Journal) (6716099-N) DOI: 10.7567/JJAP.51.082401(Journal) ========================================================== Created: 2023-02-01 12:40:54 ConfID: 6716096 CauseID: 1560039627 OtherID: 1363321233 JT: Japanese Journal of Applied Physics MD: Ihori,51,8r,80204,2012,Time Series Measurement of Electric Field and Electrical Space Charge Distributions in a Dielectric Liquid DOI: 10.1143/JJAP.51.080204(Journal) (6716096-N) DOI: 10.7567/JJAP.51.080204(Journal) ========================================================== Created: 2023-02-01 12:40:55 ConfID: 6716097 CauseID: 1560039634 OtherID: 1363321214 JT: Japanese Journal of Applied Physics MD: Esashi,51,8r,80001,2012,Revolution of Sensors in Micro-Electromechanical Systems DOI: 10.1143/JJAP.51.080001(Journal) (6716097-N) DOI: 10.7567/JJAP.51.080001(Journal) ========================================================== Created: 2023-02-01 12:41:09 ConfID: 6716110 CauseID: 1560039676 OtherID: 1363320574 JT: Japanese Journal of Applied Physics MD: Schropp,51,3s,307,2012,Large-Area Thin-Film Silicon: Synergy between Displays and Solar Cells DOI: 10.1143/JJAP.51.03CA07(Journal) (6716110-N) DOI: 10.7567/JJAP.51.03CA07(Journal) ========================================================== Created: 2023-02-01 12:41:13 ConfID: 6716111 CauseID: 1560039684 OtherID: 1363321377 JT: Japanese Journal of Applied Physics MD: Kato,51,9r,90118,2012,Maskless Selective Growth Method for p–n Junction Applications on (001)-Oriented Diamond DOI: 10.1143/JJAP.51.090118(Journal) (6716111-N) DOI: 10.7567/JJAP.51.090118(Journal) ========================================================== Created: 2023-02-01 12:41:06 ConfID: 6716108 CauseID: 1560039670 OtherID: 1363320987 JT: Japanese Journal of Applied Physics MD: Yun,51,6s,602,2012,Fabrication and Electrochemical Characterization of Nanoporous Silicon Electrode for Amperometric Urea Biosensor DOI: 10.1143/JJAP.51.06FG02(Journal) (6716108-N) DOI: 10.7567/JJAP.51.06FG02(Journal) ========================================================== Created: 2023-02-01 12:41:07 ConfID: 6716109 CauseID: 1560039671 OtherID: 1363321245 JT: Japanese Journal of Applied Physics MD: Jo,51,8r,84001,2012,Optimization of Rubbing Angle in a Bistable 90°-Twisted Liquid Crystal Cell for Low Voltage Operation DOI: 10.1143/JJAP.51.084001(Journal) (6716109-N) DOI: 10.7567/JJAP.51.084001(Journal) ========================================================== Created: 2023-02-01 12:41:05 ConfID: 6716106 CauseID: 1560039665 OtherID: 1363321246 JT: Japanese Journal of Applied Physics MD: Bai,51,8r,83001,2012,Anisotropy and Damping in Co2FeAl0.5Si0.5 via Electrical Detection of Ferromagnetic Resonance DOI: 10.1143/JJAP.51.083001(Journal) (6716106-N) DOI: 10.7567/JJAP.51.083001(Journal) ========================================================== Created: 2023-02-01 12:41:05 ConfID: 6716107 CauseID: 1560039667 OtherID: 1363321044 JT: Japanese Journal of Applied Physics MD: Wang,51,7r,72001,2012,Optical Properties of Crescent Pair for Sensing DOI: 10.1143/JJAP.51.072001(Journal) (6716107-N) DOI: 10.7567/JJAP.51.072001(Journal) ========================================================== Created: 2023-02-01 12:41:04 ConfID: 6716104 CauseID: 1560039662 OtherID: 1363320882 JT: Japanese Journal of Applied Physics MD: Kojima,51,6r,62601,2012,Material Survey for a Novel Beam Splitter Separating High-Order Harmonics from High-Average-Power Fundamental Pulses DOI: 10.1143/JJAP.51.062601(Journal) (6716104-N) DOI: 10.7567/JJAP.51.062601(Journal) ========================================================== Created: 2023-02-01 12:41:04 ConfID: 6716105 CauseID: 1560039663 OtherID: 1363321368 JT: Japanese Journal of Applied Physics MD: Kono,51,9r,90109,2012,Electron Spectroscopic Determination of Electronic Structures of Phosphorus-Doped n-Type Heteroepitaxial Diamond (001) Surface and Junction DOI: 10.1143/JJAP.51.090109(Journal) (6716105-N) DOI: 10.7567/JJAP.51.090109(Journal) ========================================================== Created: 2023-02-01 12:41:17 ConfID: 6716118 CauseID: 1560039700 OtherID: 1363321410 JT: Japanese Journal of Applied Physics MD: Liu,51,9r,93004,2012,Highly Spin-Polarized Tunneling in Epitaxial Magnetic Tunnel Junctions with a Co2MnSi Electrode and a MgO Barrier with Improved Interfacial Structural Properties DOI: 10.1143/JJAP.51.093004(Journal) (6716118-N) DOI: 10.7567/JJAP.51.093004(Journal) ========================================================== Created: 2023-02-01 12:41:23 ConfID: 6716119 CauseID: 1560039704 OtherID: 1363320097 JT: Japanese Journal of Applied Physics MD: Dumbrajs,51,12r,126601,2012,Calculations of Starting Currents and Frequencies in Frequency-Tunable Gyrotrons DOI: 10.1143/JJAP.51.126601(Journal) (6716119-N) DOI: 10.7567/JJAP.51.126601(Journal) ========================================================== Created: 2023-02-01 12:41:16 ConfID: 6716116 CauseID: 1560039698 OtherID: 1363321263 JT: Japanese Journal of Applied Physics MD: Zuerbig,51,8r,85501,2012,Growth-Temperature Dependence of Wetting Layer Formation in High Density InGaAs/GaAs Quantum Dot Structures Grown by Droplet Epitaxy DOI: 10.1143/JJAP.51.085501(Journal) (6716116-N) DOI: 10.7567/JJAP.51.085501(Journal) ========================================================== Created: 2023-02-01 12:41:17 ConfID: 6716117 CauseID: 1560039699 OtherID: 1363320895 JT: Japanese Journal of Applied Physics MD: Mu,51,6r,65101,2012,Spontaneous Polygonization of Multiwalled Carbon Nanotubes: Perturbation Analysis DOI: 10.1143/JJAP.51.065101(Journal) (6716117-N) DOI: 10.7567/JJAP.51.065101(Journal) ========================================================== Created: 2023-02-01 12:41:19 ConfID: 6716114 CauseID: 1560039695 OtherID: 1363319971 JT: Japanese Journal of Applied Physics MD: Denpoh,51,10r,106202,2012,Particle-in-Cell/Monte Carlo Collision Simulations of Striations in Inductively Coupled Plasmas DOI: 10.1143/JJAP.51.106202(Journal) (6716114-N) DOI: 10.7567/JJAP.51.106202(Journal) ========================================================== Created: 2023-02-01 12:41:15 ConfID: 6716115 CauseID: 1560039696 OtherID: 1363321380 JT: Japanese Journal of Applied Physics MD: Kondo,51,9r,90121,2012,Polyoxometalate-Modified Boron-Doped Diamond Electrodes DOI: 10.1143/JJAP.51.090121(Journal) (6716115-N) DOI: 10.7567/JJAP.51.090121(Journal) ========================================================== Created: 2023-02-01 12:41:18 ConfID: 6716112 CauseID: 1560039692 OtherID: 1363321374 JT: Japanese Journal of Applied Physics MD: Ohmagari,51,9r,90123,2012,p-Type Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films Prepared by Pulsed Laser Deposition and Their Application to Photodetectors DOI: 10.1143/JJAP.51.090123(Journal) (6716112-N) DOI: 10.7567/JJAP.51.090123(Journal) ========================================================== Created: 2023-02-01 12:41:19 ConfID: 6716113 CauseID: 1560039694 OtherID: 1363319946 JT: Japanese Journal of Applied Physics MD: Chiba,51,10r,102402,2012,Investigation of Energy-Dispersive X-ray Computed Tomography System with CdTe Scan Detector and Comparing-Differentiator and Its Application to Gadolinium K-Edge Imaging DOI: 10.1143/JJAP.51.102402(Journal) (6716113-N) DOI: 10.7567/JJAP.51.102402(Journal) ========================================================== Created: 2023-02-01 12:41:30 ConfID: 6716126 CauseID: 1560039728 OtherID: 1363321268 JT: Japanese Journal of Applied Physics MD: Tuan,51,8r,86503,2012,Study on Resist Performance of Polymer-Bound and Polymer-Blended Photo-Acid Generators DOI: 10.1143/JJAP.51.086503(Journal) (6716126-N) DOI: 10.7567/JJAP.51.086503(Journal) ========================================================== Created: 2023-02-01 12:41:31 ConfID: 6716127 CauseID: 1560039730 OtherID: 1363320777 JT: Japanese Journal of Applied Physics MD: Nakanishi,51,4s,405,2012,Temperature Dependence of Spin Relaxation Time in InAs Columnar Quantum Dots at 10 to 150 K DOI: 10.1143/JJAP.51.04DM05(Journal) (6716127-N) DOI: 10.7567/JJAP.51.04DM05(Journal) ========================================================== Created: 2023-02-01 12:41:27 ConfID: 6716124 CauseID: 1560039720 OtherID: 1363320899 JT: Japanese Journal of Applied Physics MD: Yamasaki,51,6r,66001,2012,Effect of Cathode Length on Electrical Characteristics of a Microhollow Cathode Discharge in Helium DOI: 10.1143/JJAP.51.066001(Journal) (6716124-N) DOI: 10.7567/JJAP.51.066001(Journal) ========================================================== Created: 2023-02-01 12:41:27 ConfID: 6716125 CauseID: 1560039721 OtherID: 1363321282 JT: Japanese Journal of Applied Physics MD: Lee,51,8r,86502,2012,Residual Clamping Force and Dynamic Random Access Memory Data Retention Improved by Gate Tungsten Etch Dechucking Condition in a Bipolar Electrostatic Chuck DOI: 10.1143/JJAP.51.086502(Journal) (6716125-N) DOI: 10.7567/JJAP.51.086502(Journal) ========================================================== Created: 2023-02-01 12:41:25 ConfID: 6716122 CauseID: 1560039715 OtherID: 1363321253 JT: Japanese Journal of Applied Physics MD: Nakamura,51,8r,85201,2012,Surface Functionalization of Diamond Films by Photoreaction of Elemental Sulfur and Their Surface Properties DOI: 10.1143/JJAP.51.085201(Journal) (6716122-N) DOI: 10.7567/JJAP.51.085201(Journal) ========================================================== Created: 2023-02-01 12:41:24 ConfID: 6716123 CauseID: 1560039706 OtherID: 1363320571 JT: Japanese Journal of Applied Physics MD: Shimakawa,51,3s,304,2012,Photo-Leakage Current of Thin-Film Transistors with ZnO Channels Formed at Various Oxygen Partial Pressures under Visible Light Irradiation DOI: 10.1143/JJAP.51.03CB04(Journal) (6716123-N) DOI: 10.7567/JJAP.51.03CB04(Journal) ========================================================== Created: 2023-02-01 12:41:20 ConfID: 6716120 CauseID: 1560039707 OtherID: 1363320565 JT: Japanese Journal of Applied Physics MD: Kitakado,51,3s,302,2012,Channel Shortening Phenomenon Due to Redox Reaction in a Lateral Direction on In–Ga–Zn–O Thin Film Transistors DOI: 10.1143/JJAP.51.03CB02(Journal) (6716120-N) DOI: 10.7567/JJAP.51.03CB02(Journal) ========================================================== Created: 2023-02-01 12:41:25 ConfID: 6716121 CauseID: 1560039712 OtherID: 1363320892 JT: Japanese Journal of Applied Physics MD: Qiu,51,6r,67001,2012,Three-Dimensional Reconstruction and Finite Element Modeling Analysis of the Rabbit Optic Nerve Head in Acute High Intraocular Pressure DOI: 10.1143/JJAP.51.067001(Journal) (6716121-N) DOI: 10.7567/JJAP.51.067001(Journal) ========================================================== Created: 2023-02-01 12:40:12 ConfID: 6716070 CauseID: 1560039532 OtherID: 1363320705 JT: Japanese Journal of Applied Physics MD: Huang,51,4s,409,2012,Flexible One Diode–One Resistor Crossbar Resistive-Switching Memory DOI: 10.1143/JJAP.51.04DD09(Journal) (6716070-N) DOI: 10.7567/JJAP.51.04DD09(Journal) ========================================================== Created: 2023-02-01 12:40:00 ConfID: 6716071 CauseID: 1560039489 OtherID: 1363320674 JT: Japanese Journal of Applied Physics MD: Hirano,51,4s,402,2012,Characteristics of Defect Generation and Breakdown in SiO2 for Polycrystalline Silicon Channel Field-Effect Transistor DOI: 10.1143/JJAP.51.04DA02(Journal) (6716071-N) DOI: 10.7567/JJAP.51.04DA02(Journal) ========================================================== Created: 2023-02-01 12:40:10 ConfID: 6716068 CauseID: 1560039529 OtherID: 1363321097 JT: Japanese Journal of Applied Physics MD: Takahashi,51,7r,76502,2012,An Autonomously Controllable Plasma Etching System Based on Radical Monitoring DOI: 10.1143/JJAP.51.076502(Journal) (6716068-N) DOI: 10.7567/JJAP.51.076502(Journal) ========================================================== Created: 2023-02-01 12:40:11 ConfID: 6716069 CauseID: 1560039530 OtherID: 1363321088 JT: Japanese Journal of Applied Physics MD: Sakamoto,51,7r,76701,2012,Development of Highly Sensitive Ion Imager Corresponding to Real-Time Readout Having Single-Ion Detectability DOI: 10.1143/JJAP.51.076701(Journal) (6716069-N) DOI: 10.7567/JJAP.51.076701(Journal) ========================================================== Created: 2023-02-01 12:40:10 ConfID: 6716066 CauseID: 1560039524 OtherID: 1363321054 JT: Japanese Journal of Applied Physics MD: Khan,51,7r,72202,2012,Impact of Collection Efficiency on the Optical Responsivity of Lattice Matched InP/InGaAs Heterojunction Phototransistors DOI: 10.1143/JJAP.51.072202(Journal) (6716066-N) DOI: 10.7567/JJAP.51.072202(Journal) ========================================================== Created: 2023-02-01 12:40:14 ConfID: 6716067 CauseID: 1560039528 OtherID: 1363321063 JT: Japanese Journal of Applied Physics MD: Liu,51,7r,71001,2012,Enhanced Hole Transport in Mg-Doped AlxGa1-xN/GaN Superlattices by Strain and Period Modulations DOI: 10.1143/JJAP.51.071001(Journal) (6716067-N) DOI: 10.7567/JJAP.51.071001(Journal) ========================================================== Created: 2023-02-01 12:40:06 ConfID: 6716064 CauseID: 1560039519 OtherID: 1363321376 JT: Japanese Journal of Applied Physics MD: Spātaru,51,9r,90119,2012,Functional Effects of the Deposition Substrate on the Electrochemical Behavior of Platinum Particles DOI: 10.1143/JJAP.51.090119(Journal) (6716064-N) DOI: 10.7567/JJAP.51.090119(Journal) ========================================================== Created: 2023-02-01 12:40:03 ConfID: 6716065 CauseID: 1560039497 OtherID: 1363320045 JT: Japanese Journal of Applied Physics MD: Wang,51,11r,118002,2012,In-situ Evaluation of Air/Oxygen Percentage Variation by Introducing 1,1,1,3,3-Pentafluoropropane in Ultraviolet Nanoimprint Lithography DOI: 10.1143/JJAP.51.118002(Journal) (6716065-N) DOI: 10.7567/JJAP.51.118002(Journal) ========================================================== Created: 2023-02-01 12:40:26 ConfID: 6716078 CauseID: 1560039567 OtherID: 1363321083 JT: Japanese Journal of Applied Physics MD: Kumar,51,7r,76705,2012,A Feasibility Study of Beam-Wave Interaction in 670 GHz Gyrotron for Radioactive Material Detection Application DOI: 10.1143/JJAP.51.076705(Journal) (6716078-N) DOI: 10.7567/JJAP.51.076705(Journal) ========================================================== Created: 2023-02-01 12:40:27 ConfID: 6716079 CauseID: 1560039568 OtherID: 1363321096 JT: Japanese Journal of Applied Physics MD: Morita,51,7r,76703,2012,Small-Angle X-ray Scattering Measurements of Ionic Liquids Pressurized with Carbon Dioxide Using Titanium Sample Holder: 1-Butyl-3-methylimidazolium Bis(trifluoromethylsulfonyl) Amide Mixtures up to 22 MPa DOI: 10.1143/JJAP.51.076703(Journal) (6716079-N) DOI: 10.7567/JJAP.51.076703(Journal) ========================================================== Created: 2023-02-01 12:40:21 ConfID: 6716076 CauseID: 1560039553 OtherID: 1363321089 JT: Japanese Journal of Applied Physics MD: Sato,51,7r,77301,2012,Densification Dynamics of Gadolinium-Doped Ceria upon Sintering DOI: 10.1143/JJAP.51.077301(Journal) (6716076-N) DOI: 10.7567/JJAP.51.077301(Journal) ========================================================== Created: 2023-02-01 12:40:24 ConfID: 6716077 CauseID: 1560039559 OtherID: 1363321261 JT: Japanese Journal of Applied Physics MD: Jee,51,8r,85803,2012,Enhancement of Cycling Performance by Li2O–Sn Anode for All-Solid-State Batteries DOI: 10.1143/JJAP.51.085803(Journal) (6716077-N) DOI: 10.7567/JJAP.51.085803(Journal) ========================================================== Created: 2023-02-01 12:40:19 ConfID: 6716074 CauseID: 1560039540 OtherID: 1363320688 JT: Japanese Journal of Applied Physics MD: Gaubert,51,4s,407,2012,Hole Mobility in Accumulation Mode Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.51.04DC07(Journal) (6716074-N) DOI: 10.7567/JJAP.51.04DC07(Journal) ========================================================== Created: 2023-02-01 12:40:16 ConfID: 6716075 CauseID: 1560039544 OtherID: 1363321075 JT: Japanese Journal of Applied Physics MD: Chang,51,7r,72701,2012,Active Mode-Locking of an Erbium-Doped Fiber Laser Using an Ultrafast Silicon-Based Variable Optical Attenuator DOI: 10.1143/JJAP.51.072701(Journal) (6716075-N) DOI: 10.7567/JJAP.51.072701(Journal) ========================================================== Created: 2023-02-01 12:40:13 ConfID: 6716072 CauseID: 1560039533 OtherID: 1363320059 JT: Japanese Journal of Applied Physics MD: Guo,51,11r,118004,2012,Impact of Radio Frequency Powers on GaInN Film Growth by Magnetron Reactive Sputtering DOI: 10.1143/JJAP.51.118004(Journal) (6716072-N) DOI: 10.7567/JJAP.51.118004(Journal) ========================================================== Created: 2023-02-01 12:40:20 ConfID: 6716073 CauseID: 1560039541 OtherID: 1363321352 JT: Japanese Journal of Applied Physics MD: Teraji,51,9r,90104,2012,Chemical Vapor Deposition of 12C Isotopically Enriched Polycrystalline Diamond DOI: 10.1143/JJAP.51.090104(Journal) (6716073-N) DOI: 10.7567/JJAP.51.090104(Journal) ========================================================== Created: 2023-02-01 12:40:37 ConfID: 6716086 CauseID: 1560039592 OtherID: 1363321267 JT: Japanese Journal of Applied Physics MD: Kozawa,51,8r,86504,2012,Relationship between Stochastic Effect and Line Edge Roughness in Chemically Amplified Resists for Extreme Ultraviolet Lithography Studied by Monte Carlo Simulation DOI: 10.1143/JJAP.51.086504(Journal) (6716086-N) DOI: 10.7567/JJAP.51.086504(Journal) ========================================================== Created: 2023-02-01 12:40:39 ConfID: 6716087 CauseID: 1560039597 OtherID: 1363321090 JT: Japanese Journal of Applied Physics MD: Katamune,51,7r,78003,2012,Boron-Induced Dramatically Enhanced Growth of Diamond Grains in Nanocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films Deposited by Coaxial Arc Plasma Deposition DOI: 10.1143/JJAP.51.078003(Journal) (6716087-N) DOI: 10.7567/JJAP.51.078003(Journal) ========================================================== Created: 2023-02-01 12:40:33 ConfID: 6716084 CauseID: 1560039580 OtherID: 1363320698 JT: Japanese Journal of Applied Physics MD: Ryoo,51,4s,414,2012,Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics DOI: 10.1143/JJAP.51.04DD14(Journal) (6716084-N) DOI: 10.7567/JJAP.51.04DD14(Journal) ========================================================== Created: 2023-02-01 12:40:35 ConfID: 6716085 CauseID: 1560039587 OtherID: 1363321066 JT: Japanese Journal of Applied Physics MD: Ohkochi,51,7r,73001,2012,Microscopic and Spectroscopic Studies of Light-Induced Magnetization Switching of GdFeCo Facilitated by Photoemission Electron Microscopy DOI: 10.1143/JJAP.51.073001(Journal) (6716085-N) DOI: 10.7567/JJAP.51.073001(Journal) ========================================================== Created: 2023-02-01 12:40:31 ConfID: 6716082 CauseID: 1560039577 OtherID: 1363321071 JT: Japanese Journal of Applied Physics MD: Kim,51,7r,74301,2012,Variation of Threshold Voltage and ON-Cell Current Caused by Cell Gate Length Fluctuation in Virtual Source/Drain NAND Flash Memory DOI: 10.1143/JJAP.51.074301(Journal) (6716082-N) DOI: 10.7567/JJAP.51.074301(Journal) ========================================================== Created: 2023-02-01 12:40:32 ConfID: 6716083 CauseID: 1560039578 OtherID: 1363320088 JT: Japanese Journal of Applied Physics MD: Kozawa,51,12r,126501,2012,Effect of Molecular Weight and Protection Ratio on Latent Image Fluctuation of Chemically Amplified Extreme Ultraviolet Resists DOI: 10.1143/JJAP.51.126501(Journal) (6716083-N) DOI: 10.7567/JJAP.51.126501(Journal) ========================================================== Created: 2023-02-01 12:40:29 ConfID: 6716080 CauseID: 1560039571 OtherID: 1363320823 JT: Japanese Journal of Applied Physics MD: Shimomura,51,5r,55703,2012,Adsorption of Pyrazine on a Si(001) Surface Partially Covered with an Indium Dimer Structure DOI: 10.1143/JJAP.51.055703(Journal) (6716080-N) DOI: 10.7567/JJAP.51.055703(Journal) ========================================================== Created: 2023-02-01 12:40:31 ConfID: 6716081 CauseID: 1560039576 OtherID: 1363320730 JT: Japanese Journal of Applied Physics MD: Chen,51,4s,415,2012,GaN-Based Metal–Insulator–Semiconductor Ultraviolet Photodetectors with CsF Current-Suppressing Layer DOI: 10.1143/JJAP.51.04DG15(Journal) (6716081-N) DOI: 10.7567/JJAP.51.04DG15(Journal) ========================================================== Created: 2023-02-01 12:40:46 ConfID: 6716094 CauseID: 1560039620 OtherID: 1363321381 JT: Japanese Journal of Applied Physics MD: Tsugawa,51,9r,90122,2012,Direct Coating of Nanocrystalline Diamond on Steel DOI: 10.1143/JJAP.51.090122(Journal) (6716094-N) DOI: 10.7567/JJAP.51.090122(Journal) ========================================================== Created: 2023-02-01 12:40:47 ConfID: 6716095 CauseID: 1560039623 OtherID: 1363320721 JT: Japanese Journal of Applied Physics MD: Chen,51,4s,402,2012,Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser DOI: 10.1143/JJAP.51.04DG02(Journal) (6716095-N) DOI: 10.7567/JJAP.51.04DG02(Journal) ========================================================== Created: 2023-02-01 12:40:48 ConfID: 6716092 CauseID: 1560039615 OtherID: 1363321101 JT: Japanese Journal of Applied Physics MD: Hatayama,51,7r,78001,2012,Single Etch-Pit Shape on Off-Angled 4H-SiC(0001) Si-Face Formed by Chlorine Trifluoride DOI: 10.1143/JJAP.51.078001(Journal) (6716092-N) DOI: 10.7567/JJAP.51.078001(Journal) ========================================================== Created: 2023-02-01 12:40:49 ConfID: 6716093 CauseID: 1560039617 OtherID: 1363320928 JT: Japanese Journal of Applied Physics MD: O,51,6s,606,2012,Microscopic Raman Mapping of Epitaxial Graphene on 4H-SiC(0001) DOI: 10.1143/JJAP.51.06FD06(Journal) (6716093-N) DOI: 10.7567/JJAP.51.06FD06(Journal) ========================================================== Created: 2023-02-01 12:40:41 ConfID: 6716090 CauseID: 1560039607 OtherID: 1363320701 JT: Japanese Journal of Applied Physics MD: Matsuo,51,4s,413,2012,Electrical Property of DNA Field-Effect Transistor: Charge Retention Property DOI: 10.1143/JJAP.51.04DD13(Journal) (6716090-N) DOI: 10.7567/JJAP.51.04DD13(Journal) ========================================================== Created: 2023-02-01 12:40:45 ConfID: 6716091 CauseID: 1560039614 OtherID: 1363321389 JT: Japanese Journal of Applied Physics MD: Sasaki,51,9r,90203,2012,Enhanced Photovoltaic Performance of Polymer Solar Device by Inserting Nanocrystal Titanium Oxide Interlayer DOI: 10.1143/JJAP.51.090203(Journal) (6716091-N) DOI: 10.7567/JJAP.51.090203(Journal) ========================================================== Created: 2023-02-01 12:40:40 ConfID: 6716088 CauseID: 1560039605 OtherID: 1363320741 JT: Japanese Journal of Applied Physics MD: Taue,51,4s,414,2012,Experimental Analysis of Optical Fiber Multimode Interference Structure and its Application to Refractive Index Measurement DOI: 10.1143/JJAP.51.04DG14(Journal) (6716088-N) DOI: 10.7567/JJAP.51.04DG14(Journal) ========================================================== Created: 2023-02-01 12:40:43 ConfID: 6716089 CauseID: 1560039610 OtherID: 1363320091 JT: Japanese Journal of Applied Physics MD: Takekoshi,51,12r,125102,2012,Influence of Pulse Condition in the Synthesis of Carbon Nanotubes Containing Tungsten by Arc Discharge in Water DOI: 10.1143/JJAP.51.125102(Journal) (6716089-N) DOI: 10.7567/JJAP.51.125102(Journal) ========================================================== Created: 2023-02-01 12:39:34 ConfID: 6716038 CauseID: 1560039422 OtherID: 1363320035 JT: Japanese Journal of Applied Physics MD: Cheng,51,11r,116001,2012,Fluid Modeling of a Nitrogen Atmospheric-Pressure Planar Dielectric Barrier Discharge Driven by a Realistic Distorted Sinusoidal Alternating Current Power Source DOI: 10.1143/JJAP.51.116001(Journal) (6716038-N) DOI: 10.7567/JJAP.51.116001(Journal) ========================================================== Created: 2023-02-01 12:39:42 ConfID: 6716039 CauseID: 1560039453 OtherID: 1363320695 JT: Japanese Journal of Applied Physics MD: Mizuno,51,4s,401,2012,Postannealing Effects on Strain/Crystal Quality of Lateral Source Relaxed/Strained Layer Heterostructures Fabricated by O+ Ion Implantation DOI: 10.1143/JJAP.51.04DC01(Journal) (6716039-N) DOI: 10.7567/JJAP.51.04DC01(Journal) ========================================================== Created: 2023-02-01 12:39:40 ConfID: 6716036 CauseID: 1560039451 OtherID: 1363320672 JT: Japanese Journal of Applied Physics MD: Hayashida,51,4s,405,2012,Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium–Nitride Gate for High-Performance Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.51.04DA05(Journal) (6716036-N) DOI: 10.7567/JJAP.51.04DA05(Journal) ========================================================== Created: 2023-02-01 12:39:41 ConfID: 6716037 CauseID: 1560039452 OtherID: 1363320797 JT: Japanese Journal of Applied Physics MD: Liu,51,5r,52601,2012,Monomode Optical Waveguides in Yb3+-Doped Silicate Glasses Produced by Low-Dose Carbon Ion Implantation DOI: 10.1143/JJAP.51.052601(Journal) (6716037-N) DOI: 10.7567/JJAP.51.052601(Journal) ========================================================== Created: 2023-02-01 12:39:37 ConfID: 6716034 CauseID: 1560039439 OtherID: 1363321047 JT: Japanese Journal of Applied Physics MD: Abe,51,7r,71101,2012,Electrical and Structural Properties of ZnO Films Grown from Aqueous Solutions DOI: 10.1143/JJAP.51.071101(Journal) (6716034-N) DOI: 10.7567/JJAP.51.071101(Journal) ========================================================== Created: 2023-02-01 12:39:40 ConfID: 6716035 CauseID: 1560039450 OtherID: 1363321076 JT: Japanese Journal of Applied Physics MD: Oguri,51,7r,72401,2012,Time-Resolved Surface Photoelectron Spectroscopy of Photoexcited Electron and Hole Dynamics on GaAs Using 92 eV Laser Harmonic Source DOI: 10.1143/JJAP.51.072401(Journal) (6716035-N) DOI: 10.7567/JJAP.51.072401(Journal) ========================================================== Created: 2023-02-01 12:39:39 ConfID: 6716032 CauseID: 1560039436 OtherID: 1363321074 JT: Japanese Journal of Applied Physics MD: Lee,51,7r,75802,2012,Electrical and Structural Properties of 0.98(Na0.5K0.5)NbO3–0.02Ba(Zr0.52Ti0.48)O3 Ceramics with CuO Content DOI: 10.1143/JJAP.51.075802(Journal) (6716032-N) DOI: 10.7567/JJAP.51.075802(Journal) ========================================================== Created: 2023-02-01 12:39:39 ConfID: 6716033 CauseID: 1560039437 OtherID: 1363321091 JT: Japanese Journal of Applied Physics MD: Lee,51,7r,76503,2012,Plasma-Induced Damage and Recovery on Au/n-GaN Schottky Diode in Different Processes DOI: 10.1143/JJAP.51.076503(Journal) (6716033-N) DOI: 10.7567/JJAP.51.076503(Journal) ========================================================== Created: 2023-02-01 12:39:50 ConfID: 6716046 CauseID: 1560039471 OtherID: 1363321225 JT: Japanese Journal of Applied Physics MD: Egami,51,8r,81501,2012,Stacked Polypyrrole-Coated Nonwoven Fabric Sheets for Absorbing Electromagnetic Waves with Broadband Frequencies DOI: 10.1143/JJAP.51.081501(Journal) (6716046-N) DOI: 10.7567/JJAP.51.081501(Journal) ========================================================== Created: 2023-02-01 12:39:50 ConfID: 6716047 CauseID: 1560039473 OtherID: 1363320900 JT: Japanese Journal of Applied Physics MD: Ismail,51,6r,67301,2012,Fluid–Particle Separation of Magnetorheological Fluid in Squeeze Mode DOI: 10.1143/JJAP.51.067301(Journal) (6716047-N) DOI: 10.7567/JJAP.51.067301(Journal) ========================================================== Created: 2023-02-01 12:39:49 ConfID: 6716044 CauseID: 1560039468 OtherID: 1363320787 JT: Japanese Journal of Applied Physics MD: Seike,51,5r,50201,2012,Self-Organized Nanostructures and High Blocking Temperatures in MgO-Based d0 Ferromagnets DOI: 10.1143/JJAP.51.050201(Journal) (6716044-N) DOI: 10.7567/JJAP.51.050201(Journal) ========================================================== Created: 2023-02-01 12:39:49 ConfID: 6716045 CauseID: 1560039469 OtherID: 1363320087 JT: Japanese Journal of Applied Physics MD: Tanabe,51,12r,122404,2012,A Light-Stabilization Mechanism of Anionic Oxonol Dyes for Digital Versatile Disks DOI: 10.1143/JJAP.51.122404(Journal) (6716045-N) DOI: 10.7567/JJAP.51.122404(Journal) ========================================================== Created: 2023-02-01 12:39:48 ConfID: 6716042 CauseID: 1560039466 OtherID: 1363320086 JT: Japanese Journal of Applied Physics MD: Imai,51,12r,124301,2012,Stability Diagrams of Single-Common-Gate Double-Dot Single-Electron Transistors with Arbitrary Junction and Gate Capacitances DOI: 10.1143/JJAP.51.124301(Journal) (6716042-N) DOI: 10.7567/JJAP.51.124301(Journal) ========================================================== Created: 2023-02-01 12:39:47 ConfID: 6716043 CauseID: 1560039464 OtherID: 1363321081 JT: Japanese Journal of Applied Physics MD: Yoshioka,51,7r,73201,2012,Analysis of Charge Compensation Mechanisms in Pr1-xAxCoO3-δ (A = Ca, Sr) by X-ray Absorption Near-Edge Structure DOI: 10.1143/JJAP.51.073201(Journal) (6716043-N) DOI: 10.7567/JJAP.51.073201(Journal) ========================================================== Created: 2023-02-01 12:39:44 ConfID: 6716040 CauseID: 1560039458 OtherID: 1363320074 JT: Japanese Journal of Applied Physics MD: Kim,51,12r,122801,2012,Numerical Study of Multichannel Gain and Phase Recovery Dynamics of Quantum-Dot Semiconductor Optical Amplifiers by Solving Coupled Rate Equations DOI: 10.1143/JJAP.51.122801(Journal) (6716040-N) DOI: 10.7567/JJAP.51.122801(Journal) ========================================================== Created: 2023-02-01 12:39:47 ConfID: 6716041 CauseID: 1560039463 OtherID: 1363320039 JT: Japanese Journal of Applied Physics MD: Kozawa,51,11r,116503,2012,Stochastic Effect of Acid Catalytic Chain Reaction in Chemically Amplified Extreme Ultraviolet Resists DOI: 10.1143/JJAP.51.116503(Journal) (6716041-N) DOI: 10.7567/JJAP.51.116503(Journal) ========================================================== Created: 2023-02-01 12:39:44 ConfID: 6716054 CauseID: 1560039456 OtherID: 1363320037 JT: Japanese Journal of Applied Physics MD: Chen,51,11r,116102,2012,Simplified Model Involving Energy Balance Mechanism for Atmospheric-Pressure Plasma Plume Generated in Quartz Tube DOI: 10.1143/JJAP.51.116102(Journal) (6716054-N) DOI: 10.7567/JJAP.51.116102(Journal) ========================================================== Created: 2023-02-01 12:39:59 ConfID: 6716055 CauseID: 1560039488 OtherID: 1363321255 JT: Japanese Journal of Applied Physics MD: Jeong,51,8r,82702,2012,Temporally Stable and Continuously Tunable Laser Device Fabricated Using Polymerized Cholesteric Liquid Crystals DOI: 10.1143/JJAP.51.082702(Journal) (6716055-N) DOI: 10.7567/JJAP.51.082702(Journal) ========================================================== Created: 2023-02-01 12:39:54 ConfID: 6716052 CauseID: 1560039481 OtherID: 1363320108 JT: Japanese Journal of Applied Physics MD: Zhao,51,12r,127301,2012,Iterative Frequency Domain Decision Feedback Equalization and Decoding for Underwater Acoustic Communications DOI: 10.1143/JJAP.51.127301(Journal) (6716052-N) DOI: 10.7567/JJAP.51.127301(Journal) ========================================================== Created: 2023-02-01 12:39:58 ConfID: 6716053 CauseID: 1560039484 OtherID: 1363321046 JT: Japanese Journal of Applied Physics MD: Venkatesh,51,7r,71301,2012,Effect of Alkaline pH on Polishing and Etching of Single and Polycrystalline Silicon DOI: 10.1143/JJAP.51.071301(Journal) (6716053-N) DOI: 10.7567/JJAP.51.071301(Journal) ========================================================== Created: 2023-02-01 12:39:51 ConfID: 6716050 CauseID: 1560039475 OtherID: 1363320570 JT: Japanese Journal of Applied Physics MD: Okada,51,3s,302,2012,Crystallization of Si Thin Film on Flexible Plastic Substrate by Blue Multi-Laser Diode Annealing DOI: 10.1143/JJAP.51.03CA02(Journal) (6716050-N) DOI: 10.7567/JJAP.51.03CA02(Journal) ========================================================== Created: 2023-02-01 12:39:54 ConfID: 6716051 CauseID: 1560039480 OtherID: 1363320568 JT: Japanese Journal of Applied Physics MD: Tomai,51,3s,301,2012,High-Performance Thin Film Transistor with Amorphous In2O3–SnO2–ZnO Channel Layer DOI: 10.1143/JJAP.51.03CB01(Journal) (6716051-N) DOI: 10.7567/JJAP.51.03CB01(Journal) ========================================================== Created: 2023-02-01 12:39:51 ConfID: 6716048 CauseID: 1560039474 OtherID: 1363321057 JT: Japanese Journal of Applied Physics MD: Kurokawa,51,7r,70207,2012,Possibility of Exciton Mediated Superconductivity in Nano-Sized Sn/Si Core–Shell Clusters: A Process Technology towards Heterogeneous Material in Nano-Scale DOI: 10.1143/JJAP.51.070207(Journal) (6716048-N) DOI: 10.7567/JJAP.51.070207(Journal) ========================================================== Created: 2023-02-01 12:39:52 ConfID: 6716049 CauseID: 1560039476 OtherID: 1363320804 JT: Japanese Journal of Applied Physics MD: Umeyama,51,5r,53001,2012,Synthesis and Magnetic Properties of NiSe, NiTe, CoSe, and CoTe DOI: 10.1143/JJAP.51.053001(Journal) (6716049-N) DOI: 10.7567/JJAP.51.053001(Journal) ========================================================== Created: 2023-02-01 12:40:03 ConfID: 6716062 CauseID: 1560039508 OtherID: 1363320092 JT: Japanese Journal of Applied Physics MD: Wada,51,12r,125603,2012,Formation of Thin Germanium Dioxide Film with a High-Quality Interface Using a Direct Neutral Beam Oxidation Process DOI: 10.1143/JJAP.51.125603(Journal) (6716062-N) DOI: 10.7567/JJAP.51.125603(Journal) ========================================================== Created: 2023-02-01 12:40:09 ConfID: 6716063 CauseID: 1560039516 OtherID: 1363320825 JT: Japanese Journal of Applied Physics MD: Tsuchiya,51,5r,55103,2012,Theoretical Evaluation of Ballistic Electron Transport in Field-Effect Transistors with Semiconducting Graphene Channels DOI: 10.1143/JJAP.51.055103(Journal) (6716063-N) DOI: 10.7567/JJAP.51.055103(Journal) ========================================================== Created: 2023-02-01 12:40:02 ConfID: 6716060 CauseID: 1560039506 OtherID: 1363320875 JT: Japanese Journal of Applied Physics MD: Kim,51,6r,60201,2012,Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces DOI: 10.1143/JJAP.51.060201(Journal) (6716060-N) DOI: 10.7567/JJAP.51.060201(Journal) ========================================================== Created: 2023-02-01 12:40:05 ConfID: 6716061 CauseID: 1560039511 OtherID: 1363321056 JT: Japanese Journal of Applied Physics MD: Bae,51,7r,72201,2012,Low Voltage and High Transmittance Polymer-Stabilized Blue-Phase Liquid Crystal Device by Combined In-Plane and Oblique Electric Field along the Horizontal Direction DOI: 10.1143/JJAP.51.072201(Journal) (6716061-N) DOI: 10.7567/JJAP.51.072201(Journal) ========================================================== Created: 2023-02-01 12:39:57 ConfID: 6716058 CauseID: 1560039495 OtherID: 1363320865 JT: Japanese Journal of Applied Physics MD: Ieda,51,6r,62202,2012,Filterless Ultraviolet Detector Based on Cerium Fluoride Thin Film Grown by Pulsed Laser Deposition DOI: 10.1143/JJAP.51.062202(Journal) (6716058-N) DOI: 10.7567/JJAP.51.062202(Journal) ========================================================== Created: 2023-02-01 12:40:01 ConfID: 6716059 CauseID: 1560039504 OtherID: 1363321228 JT: Japanese Journal of Applied Physics MD: Kawabata,51,8r,82404,2012,Improvement of an Optically Pumped Magnetometer Using a Combination of D1 and D2 Transitions DOI: 10.1143/JJAP.51.082404(Journal) (6716059-N) DOI: 10.7567/JJAP.51.082404(Journal) ========================================================== Created: 2023-02-01 12:39:56 ConfID: 6716056 CauseID: 1560039493 OtherID: 1363320584 JT: Japanese Journal of Applied Physics MD: Furue,51,3s,301,2012,Fabrication of Defect-Free Ferroelectric Liquid Crystal Cells Using Alignment Films Rubbed in Antiparallel Direction DOI: 10.1143/JJAP.51.03CC01(Journal) (6716056-N) DOI: 10.7567/JJAP.51.03CC01(Journal) ========================================================== Created: 2023-02-01 12:39:57 ConfID: 6716057 CauseID: 1560039494 OtherID: 1363320792 JT: Japanese Journal of Applied Physics MD: Imanaga,51,5r,51501,2012,Simulation of Material Properties of Barium Titanate Single Crystal with Multidomain Structure Using Modified Time-Dependent Devonshire–Ginzburg–Landau Model DOI: 10.1143/JJAP.51.051501(Journal) (6716057-N) DOI: 10.7567/JJAP.51.051501(Journal) ========================================================== Created: 2023-02-01 12:44:11 ConfID: 6716262 CauseID: 1560040150 OtherID: 1363320006 JT: Japanese Journal of Applied Physics MD: Hirose,51,11r,111802,2012,Effects of Proton Irradiation on Optical and Electrical Properties of Cu(In,Ga)Se2 Solar Cells DOI: 10.1143/JJAP.51.111802(Journal) (6716262-N) DOI: 10.7567/JJAP.51.111802(Journal) ========================================================== Created: 2023-02-01 12:44:12 ConfID: 6716263 CauseID: 1560040153 OtherID: 1363319966 JT: Japanese Journal of Applied Physics MD: Tsuchiya,51,10r,105101,2012,Laser-Irradiation-Induced Enrichment of Metallic Single-Walled Carbon Nanotubes from As-Synthesized Nanotubes Individually Dispersed in Aqueous Solution DOI: 10.1143/JJAP.51.105101(Journal) (6716263-N) DOI: 10.7567/JJAP.51.105101(Journal) ========================================================== Created: 2023-02-01 12:43:56 ConfID: 6716260 CauseID: 1560040104 OtherID: 1363320926 JT: Japanese Journal of Applied Physics MD: Rahman,51,6s,609,2012,Identification of Graphene Layer Numbers from Color Combination Contrast Image for Wide-Area Characterization DOI: 10.1143/JJAP.51.06FD09(Journal) (6716260-N) DOI: 10.7567/JJAP.51.06FD09(Journal) ========================================================== Created: 2023-02-01 12:44:10 ConfID: 6716261 CauseID: 1560040146 OtherID: 1363320931 JT: Japanese Journal of Applied Physics MD: Ahmad,51,6s,605,2012,Amorphous Carbon Deposited by a Novel Aerosol-Assisted Chemical Vapor Deposition for Photovoltaic Solar Cells DOI: 10.1143/JJAP.51.06FD05(Journal) (6716261-N) DOI: 10.7567/JJAP.51.06FD05(Journal) ========================================================== Created: 2023-02-01 12:44:08 ConfID: 6716258 CauseID: 1560040132 OtherID: 1363320687 JT: Japanese Journal of Applied Physics MD: Li,51,4s,408,2012,Random Interface-Traps-Induced Electrical Characteristic Fluctuation in 16-nm-Gate High-κ/Metal Gate Complementary Metal–Oxide–Semiconductor Device and Inverter Circuit DOI: 10.1143/JJAP.51.04DC08(Journal) (6716258-N) DOI: 10.7567/JJAP.51.04DC08(Journal) ========================================================== Created: 2023-02-01 12:44:07 ConfID: 6716259 CauseID: 1560040139 OtherID: 1363321405 JT: Japanese Journal of Applied Physics MD: Han,51,9r,91602,2012,Enhanced Stability of All Solution-Processed Organic Thin-Film Transistors Using Highly Conductive Modified Polymer Electrodes DOI: 10.1143/JJAP.51.091602(Journal) (6716259-N) DOI: 10.7567/JJAP.51.091602(Journal) ========================================================== Created: 2023-02-01 12:44:05 ConfID: 6716256 CauseID: 1560040129 OtherID: 1363320936 JT: Japanese Journal of Applied Physics MD: Mamat,51,6s,604,2012,Effects of Aluminium Doping and Electrode Distance on the Performance of Aligned Zinc Oxide Nanorod Array-Based Ultraviolet Photoconductive Sensors DOI: 10.1143/JJAP.51.06FE04(Journal) (6716256-N) DOI: 10.7567/JJAP.51.06FE04(Journal) ========================================================== Created: 2023-02-01 12:44:09 ConfID: 6716257 CauseID: 1560040133 OtherID: 1363321371 JT: Japanese Journal of Applied Physics MD: Wang,51,9r,90125,2012,High Priority of Nanocrystalline Diamond as a Biosensing Platform DOI: 10.1143/JJAP.51.090125(Journal) (6716257-N) DOI: 10.7567/JJAP.51.090125(Journal) ========================================================== Created: 2023-02-01 12:44:18 ConfID: 6716270 CauseID: 1560040168 OtherID: 1363320100 JT: Japanese Journal of Applied Physics MD: Oshima,51,12r,125503,2012,Thickness Dependence of Structure and Optical Characteristics in Fluorine-Doped SnO2 Films Grown by Spray Pyrolysis Method DOI: 10.1143/JJAP.51.125503(Journal) (6716270-N) DOI: 10.7567/JJAP.51.125503(Journal) ========================================================== Created: 2023-02-01 12:44:20 ConfID: 6716271 CauseID: 1560040173 OtherID: 1363319977 JT: Japanese Journal of Applied Physics MD: Mochizuki,51,10r,106601,2012,Waveguide Two-Point Differential-Excitation Method for Quantitative Absorption Measurements of Nanostructures DOI: 10.1143/JJAP.51.106601(Journal) (6716271-N) DOI: 10.7567/JJAP.51.106601(Journal) ========================================================== Created: 2023-02-01 12:44:17 ConfID: 6716268 CauseID: 1560040167 OtherID: 1363320576 JT: Japanese Journal of Applied Physics MD: Yamasaki,51,3s,303,2012,Thin-Film Devices Fabricated on Double-Layered Polycrystalline Silicon Films Formed by Green Laser Annealing DOI: 10.1143/JJAP.51.03CA03(Journal) (6716268-N) DOI: 10.7567/JJAP.51.03CA03(Journal) ========================================================== Created: 2023-02-01 12:44:17 ConfID: 6716269 CauseID: 1560040166 OtherID: 1363320082 JT: Japanese Journal of Applied Physics MD: Wang,51,12r,122301,2012,Investigation of Controlled Current Matching in Polymer Tandem Solar Cells Considering Different Layer Sequences and Optical Spacer DOI: 10.1143/JJAP.51.122301(Journal) (6716269-N) DOI: 10.7567/JJAP.51.122301(Journal) ========================================================== Created: 2023-02-01 12:44:16 ConfID: 6716266 CauseID: 1560040165 OtherID: 1363321379 JT: Japanese Journal of Applied Physics MD: Piao,51,9r,90201,2012,Fabrication of Silicon Oxide Thin Films by Mist Chemical Vapor Deposition Method from Polysilazane and Ozone as Sources DOI: 10.1143/JJAP.51.090201(Journal) (6716266-N) DOI: 10.7567/JJAP.51.090201(Journal) ========================================================== Created: 2023-02-01 12:44:16 ConfID: 6716267 CauseID: 1560040164 OtherID: 1363320693 JT: Japanese Journal of Applied Physics MD: Zhang,51,4s,401,2012,64 kbit Ferroelectric-Gate-Transistor-Integrated NAND Flash Memory with 7.5 V Program and Long Data Retention DOI: 10.1143/JJAP.51.04DD01(Journal) (6716267-N) DOI: 10.7567/JJAP.51.04DD01(Journal) ========================================================== Created: 2023-02-01 12:44:12 ConfID: 6716264 CauseID: 1560040154 OtherID: 1363321388 JT: Japanese Journal of Applied Physics MD: Ohtake,51,9r,90128,2012,Characteristics of Diamond-Like Carbon Films Deposited on Polymer Dental Materials DOI: 10.1143/JJAP.51.090128(Journal) (6716264-N) DOI: 10.7567/JJAP.51.090128(Journal) ========================================================== Created: 2023-02-01 12:44:13 ConfID: 6716265 CauseID: 1560040155 OtherID: 1363320012 JT: Japanese Journal of Applied Physics MD: Zermatten,51,11r,110205,2012,Plasma-Enhanced Chemical Vapor Deposition of Si-Rich Silicon Nitride Films Optimized for Waveguide-Based Sensing Applications in the Visible Range DOI: 10.1143/JJAP.51.110205(Journal) (6716265-N) DOI: 10.7567/JJAP.51.110205(Journal) ========================================================== Created: 2023-02-01 12:44:30 ConfID: 6716278 CauseID: 1560040200 OtherID: 1363320008 JT: Japanese Journal of Applied Physics MD: Uedono,51,11r,111801,2012,Vacancy-Type Defects Introduced by Gas Cluster Ion-Implantation on Si Studied by Monoenergetic Positron Beams DOI: 10.1143/JJAP.51.111801(Journal) (6716278-N) DOI: 10.7567/JJAP.51.111801(Journal) ========================================================== Created: 2023-02-01 12:44:30 ConfID: 6716279 CauseID: 1560040206 OtherID: 1363320933 JT: Japanese Journal of Applied Physics MD: Sanbonsuge,51,6s,610,2012,Improvement in Film Quality of Epitaxial Graphene on SiC(111)/Si(111) by SiH4 Pretreatment DOI: 10.1143/JJAP.51.06FD10(Journal) (6716279-N) DOI: 10.7567/JJAP.51.06FD10(Journal) ========================================================== Created: 2023-02-01 12:44:25 ConfID: 6716276 CauseID: 1560040194 OtherID: 1363321278 JT: Japanese Journal of Applied Physics MD: Yoshimura,51,8s1,802,2012,Sputtering Yields of CaO, SrO, and BaO by Monochromatic Noble Gas Ion Bombardment DOI: 10.1143/JJAP.51.08HB02(Journal) (6716276-N) DOI: 10.7567/JJAP.51.08HB02(Journal) ========================================================== Created: 2023-02-01 12:44:27 ConfID: 6716277 CauseID: 1560040197 OtherID: 1363319979 JT: Japanese Journal of Applied Physics MD: Kawashima,51,10r,107201,2012,Development of Cell Culture Microdevice Integrated with Piezoelectric Thin Film Actuator for On-Chip Regulation of Cell Functions DOI: 10.1143/JJAP.51.107201(Journal) (6716277-N) DOI: 10.7567/JJAP.51.107201(Journal) ========================================================== Created: 2023-02-01 12:44:22 ConfID: 6716274 CauseID: 1560040178 OtherID: 1363320098 JT: Japanese Journal of Applied Physics MD: Hamada,51,12r,125202,2012,Development of Scanning Tunneling Potentiometry for Semiconducting Samples DOI: 10.1143/JJAP.51.125202(Journal) (6716274-N) DOI: 10.7567/JJAP.51.125202(Journal) ========================================================== Created: 2023-02-01 12:44:24 ConfID: 6716275 CauseID: 1560040181 OtherID: 1363320927 JT: Japanese Journal of Applied Physics MD: Ide,51,6s,602,2012,Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates DOI: 10.1143/JJAP.51.06FD02(Journal) (6716275-N) DOI: 10.7567/JJAP.51.06FD02(Journal) ========================================================== Created: 2023-02-01 12:44:20 ConfID: 6716272 CauseID: 1560040174 OtherID: 1363320077 JT: Japanese Journal of Applied Physics MD: Matsushita,51,12r,123103,2012,Effect of Packing Density on Critical Current Density at High Magnetic Fields in Polycrystalline MgB2 Superconductors DOI: 10.1143/JJAP.51.123103(Journal) (6716272-N) DOI: 10.7567/JJAP.51.123103(Journal) ========================================================== Created: 2023-02-01 12:44:22 ConfID: 6716273 CauseID: 1560040177 OtherID: 1363320917 JT: Japanese Journal of Applied Physics MD: Santillan,51,6s,606,2012,In situ Dissolution Analysis of Ultrathin Extreme Ultraviolet Resists DOI: 10.1143/JJAP.51.06FC06(Journal) (6716273-N) DOI: 10.7567/JJAP.51.06FC06(Journal) ========================================================== Created: 2023-02-01 12:44:41 ConfID: 6716286 CauseID: 1560040240 OtherID: 1363321404 JT: Japanese Journal of Applied Physics MD: Ray,51,9r,95201,2012,Hydrogenation Effects of Ultrananocrystalline Diamond Detected by X-ray Absorption Near Edge Structure and Raman Spectroscopy DOI: 10.1143/JJAP.51.095201(Journal) (6716286-N) DOI: 10.7567/JJAP.51.095201(Journal) ========================================================== Created: 2023-02-01 12:44:41 ConfID: 6716287 CauseID: 1560040243 OtherID: 1363320004 JT: Japanese Journal of Applied Physics MD: Kim,51,11r,111202,2012,Hot-Electron-Induced Device Degradation during Gate-Induced Drain Leakage Stress DOI: 10.1143/JJAP.51.111202(Journal) (6716287-N) DOI: 10.7567/JJAP.51.111202(Journal) ========================================================== Created: 2023-02-01 12:44:40 ConfID: 6716284 CauseID: 1560040227 OtherID: 1363320567 JT: Japanese Journal of Applied Physics MD: Kimura,51,3s,305,2012,Mechanism Analysis of Current–Voltage Characteristic in a Lightly Doped Drain Polycrystalline Silicon Thin-Film Transistor Using Activation Energy DOI: 10.1143/JJAP.51.03CA05(Journal) (6716284-N) DOI: 10.7567/JJAP.51.03CA05(Journal) ========================================================== Created: 2023-02-01 12:44:40 ConfID: 6716285 CauseID: 1560040238 OtherID: 1363320677 JT: Japanese Journal of Applied Physics MD: Oniki,51,4s,401,2012,Water-Related Hole Traps at Thermally Grown GeO2–Ge Interface DOI: 10.1143/JJAP.51.04DA01(Journal) (6716285-N) DOI: 10.7567/JJAP.51.04DA01(Journal) ========================================================== Created: 2023-02-01 12:44:35 ConfID: 6716282 CauseID: 1560040213 OtherID: 1363319927 JT: Japanese Journal of Applied Physics MD: Seok,51,10r,101001,2012,New AlGaN/GaN High Electron Mobility Transistors Employing Charge Accumulation in Multiple Al2O3/Ga2O3 Stacks DOI: 10.1143/JJAP.51.101001(Journal) (6716282-N) DOI: 10.7567/JJAP.51.101001(Journal) ========================================================== Created: 2023-02-01 12:44:38 ConfID: 6716283 CauseID: 1560040223 OtherID: 1363320025 JT: Japanese Journal of Applied Physics MD: Shen,51,11r,112701,2012,Diode-Side-Pumped Q-Switched Intracavity Frequency-Doubled Nd:Gd3Ga5O12/LiB3O5 Laser at 555 nm DOI: 10.1143/JJAP.51.112701(Journal) (6716283-N) DOI: 10.7567/JJAP.51.112701(Journal) ========================================================== Created: 2023-02-01 12:44:32 ConfID: 6716280 CauseID: 1560040209 OtherID: 1363321414 JT: Japanese Journal of Applied Physics MD: Tagami,51,9r,96504,2012,Effects of Low-k Stack Structure on Performance of Complementary Metal Oxide Semiconductor Devices and Chip Package Interaction Failure DOI: 10.1143/JJAP.51.096504(Journal) (6716280-N) DOI: 10.7567/JJAP.51.096504(Journal) ========================================================== Created: 2023-02-01 12:44:32 ConfID: 6716281 CauseID: 1560040210 OtherID: 1363320119 JT: Japanese Journal of Applied Physics MD: Chen,51,12r,127001,2012,To Study the Effect of Paclitaxel on the Cytoplasmic Viscosity of Murine Macrophage Immune Cell RAW 264.7 Using Self-Developed Optical Tweezers System DOI: 10.1143/JJAP.51.127001(Journal) (6716281-N) DOI: 10.7567/JJAP.51.127001(Journal) ========================================================== Created: 2023-02-01 12:43:31 ConfID: 6716230 CauseID: 1560040048 OtherID: 1363320027 JT: Japanese Journal of Applied Physics MD: Someno,51,11r,115202,2012,Photoluminescence of Nanocrystalline Silicon Quantum Dots with Various Sizes and Various Phosphorus Doping Concentrations Prepared by Very High Frequency Plasma DOI: 10.1143/JJAP.51.115202(Journal) (6716230-N) DOI: 10.7567/JJAP.51.115202(Journal) ========================================================== Created: 2023-02-01 12:43:38 ConfID: 6716231 CauseID: 1560040056 OtherID: 1363321407 JT: Japanese Journal of Applied Physics MD: Shoji,51,9r,92001,2012,Plasmon-Based Optical Trapping of Polymer Nano-Spheres as Explored by Confocal Fluorescence Microspectroscopy: A Possible Mechanism of a Resonant Excitation Effect DOI: 10.1143/JJAP.51.092001(Journal) (6716231-N) DOI: 10.7567/JJAP.51.092001(Journal) ========================================================== Created: 2023-02-01 12:43:31 ConfID: 6716228 CauseID: 1560040047 OtherID: 1363321012 JT: Japanese Journal of Applied Physics MD: Iyoshi,51,6s,608,2012,Step and Repeat Ultraviolet Nanoimprinting under Pentafluoropropane Gas Ambient DOI: 10.1143/JJAP.51.06FJ08(Journal) (6716228-N) DOI: 10.7567/JJAP.51.06FJ08(Journal) ========================================================== Created: 2023-02-01 12:43:32 ConfID: 6716229 CauseID: 1560040050 OtherID: 1363319958 JT: Japanese Journal of Applied Physics MD: Satoh,51,10r,105801,2012,Acceptor-Like States in SiGe Alloy Related to Point Defects Induced by Si+ Ion Implantation DOI: 10.1143/JJAP.51.105801(Journal) (6716229-N) DOI: 10.7567/JJAP.51.105801(Journal) ========================================================== Created: 2023-02-01 12:43:28 ConfID: 6716226 CauseID: 1560040032 OtherID: 1363321250 JT: Japanese Journal of Applied Physics MD: Ogusu,51,8r,82503,2012,All-Optical Switching in Nonlinear Multimode Interference Couplers DOI: 10.1143/JJAP.51.082503(Journal) (6716226-N) DOI: 10.7567/JJAP.51.082503(Journal) ========================================================== Created: 2023-02-01 12:43:34 ConfID: 6716227 CauseID: 1560040041 OtherID: 1363321244 JT: Japanese Journal of Applied Physics MD: Yoshitake,51,8r,85601,2012,Prediction of Influence of Oxygen in Annealing Atmosphere on Surface Segregation Behavior in Layered Materials DOI: 10.1143/JJAP.51.085601(Journal) (6716227-N) DOI: 10.7567/JJAP.51.085601(Journal) ========================================================== Created: 2023-02-01 12:43:26 ConfID: 6716224 CauseID: 1560040026 OtherID: 1363320749 JT: Japanese Journal of Applied Physics MD: Suzuki,51,4s,402,2012,Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal–Oxide–Semiconductor Hybrid Structure DOI: 10.1143/JJAP.51.04DM02(Journal) (6716224-N) DOI: 10.7567/JJAP.51.04DM02(Journal) ========================================================== Created: 2023-02-01 12:43:27 ConfID: 6716225 CauseID: 1560040028 OtherID: 1363319953 JT: Japanese Journal of Applied Physics MD: Arai,51,10r,105002,2012,Synthesis and Photoluminescence Properties of SnO2 Nanopowder DOI: 10.1143/JJAP.51.105002(Journal) (6716225-N) DOI: 10.7567/JJAP.51.105002(Journal) ========================================================== Created: 2023-02-01 12:43:43 ConfID: 6716238 CauseID: 1560040078 OtherID: 1363320854 JT: Japanese Journal of Applied Physics MD: Ono,51,5s,501,2012,Synchronized Multiple-Array Vibrational Device for Microelectromechanical System Electrostatic Energy Harvester DOI: 10.1143/JJAP.51.05EE01(Journal) (6716238-N) DOI: 10.7567/JJAP.51.05EE01(Journal) ========================================================== Created: 2023-02-01 12:43:42 ConfID: 6716239 CauseID: 1560040077 OtherID: 1363321021 JT: Japanese Journal of Applied Physics MD: Kano,51,6s,604,2012,Effect of Microscale Surface Geometry of Electrodes on Performance of Microbial Fuel Cells DOI: 10.1143/JJAP.51.06FK04(Journal) (6716239-N) DOI: 10.7567/JJAP.51.06FK04(Journal) ========================================================== Created: 2023-02-01 12:43:42 ConfID: 6716236 CauseID: 1560040076 OtherID: 1363319960 JT: Japanese Journal of Applied Physics MD: Fujishiro,51,10r,103005,2012,Pulsed Field Magnetization of Large MgB2 Bulk Fabricated by Reactive Liquid Mg Infiltration DOI: 10.1143/JJAP.51.103005(Journal) (6716236-N) DOI: 10.7567/JJAP.51.103005(Journal) ========================================================== Created: 2023-02-01 12:43:41 ConfID: 6716237 CauseID: 1560040075 OtherID: 1363319963 JT: Japanese Journal of Applied Physics MD: Iguchi,51,10r,103004,2012,Spin Pumping without Three-Magnon Splitting in Polycrystalline Bi1Y2Fe5O12/Pt Bilayer Structure DOI: 10.1143/JJAP.51.103004(Journal) (6716237-N) DOI: 10.7567/JJAP.51.103004(Journal) ========================================================== Created: 2023-02-01 12:43:39 ConfID: 6716234 CauseID: 1560040058 OtherID: 1363320948 JT: Japanese Journal of Applied Physics MD: Lee,51,6s,621,2012,Process Optimization for Synthesis of High-Quality Graphene Films by Low-Pressure Chemical Vapor Deposition DOI: 10.1143/JJAP.51.06FD21(Journal) (6716234-N) DOI: 10.7567/JJAP.51.06FD21(Journal) ========================================================== Created: 2023-02-01 12:43:44 ConfID: 6716235 CauseID: 1560040073 OtherID: 1363320083 JT: Japanese Journal of Applied Physics MD: Ferng,51,12r,124201,2012,Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal–Semiconductor–Metal Two-Dimensional Electron Gas Varactor DOI: 10.1143/JJAP.51.124201(Journal) (6716235-N) DOI: 10.7567/JJAP.51.124201(Journal) ========================================================== Created: 2023-02-01 12:43:28 ConfID: 6716232 CauseID: 1560040031 OtherID: 1363321034 JT: Japanese Journal of Applied Physics MD: Watanabe,51,6s,611,2012,Demonstration of Vibrational Braille Code Display Using Large Displacement Micro-Electro-Mechanical Systems Actuators DOI: 10.1143/JJAP.51.06FL11(Journal) (6716232-N) DOI: 10.7567/JJAP.51.06FL11(Journal) ========================================================== Created: 2023-02-01 12:43:39 ConfID: 6716233 CauseID: 1560040059 OtherID: 1363320764 JT: Japanese Journal of Applied Physics MD: Wei,51,4s,405,2012,Analysis of Operation Mechanism of Field Effect Transistor Composed of Network of High-Quality Single Wall Carbon Nanotubes by Scanning Gate Microscopy DOI: 10.1143/JJAP.51.04DN05(Journal) (6716233-N) DOI: 10.7567/JJAP.51.04DN05(Journal) ========================================================== Created: 2023-02-01 12:43:48 ConfID: 6716246 CauseID: 1560040085 OtherID: 1363321367 JT: Japanese Journal of Applied Physics MD: Hirama,51,9r,90112,2012,Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al2O3 Passivation Layer DOI: 10.1143/JJAP.51.090112(Journal) (6716246-N) DOI: 10.7567/JJAP.51.090112(Journal) ========================================================== Created: 2023-02-01 12:43:53 ConfID: 6716247 CauseID: 1560040096 OtherID: 1363320984 JT: Japanese Journal of Applied Physics MD: Yoo,51,6s,614,2012,Oxygen Vacancy Chain Formation in TiO2 under External Strain for Resistive Switching Memory DOI: 10.1143/JJAP.51.06FG14(Journal) (6716247-N) DOI: 10.7567/JJAP.51.06FG14(Journal) ========================================================== Created: 2023-02-01 12:43:51 ConfID: 6716244 CauseID: 1560040092 OtherID: 1363320064 JT: Japanese Journal of Applied Physics MD: Kouda,51,12r,121101,2012,Electrical Properties of CeO2/La2O3 Stacked Gate Dielectrics Fabricated by Chemical Vapor Deposition and Atomic Layer Deposition DOI: 10.1143/JJAP.51.121101(Journal) (6716244-N) DOI: 10.7567/JJAP.51.121101(Journal) ========================================================== Created: 2023-02-01 12:43:51 ConfID: 6716245 CauseID: 1560040093 OtherID: 1363320915 JT: Japanese Journal of Applied Physics MD: Kashiwagi,51,6s,612,2012,Defect Inspection Technique Using Surface Plasmon Resonance DOI: 10.1143/JJAP.51.06FB12(Journal) (6716245-N) DOI: 10.7567/JJAP.51.06FB12(Journal) ========================================================== Created: 2023-02-01 12:43:48 ConfID: 6716242 CauseID: 1560040086 OtherID: 1363320046 JT: Japanese Journal of Applied Physics MD: Lee,51,11r,116501,2012,Investigation of Vertical Channel Architecture for Bulk Erase Operation in Three-Dimensional NAND Flash Memory DOI: 10.1143/JJAP.51.116501(Journal) (6716242-N) DOI: 10.7567/JJAP.51.116501(Journal) ========================================================== Created: 2023-02-01 12:43:49 ConfID: 6716243 CauseID: 1560040087 OtherID: 1363320102 JT: Japanese Journal of Applied Physics MD: Uchikoshi,51,12r,125501,2012,Growth Conditions and Structural Properties of Cu(In,Ga)Se2 Thin Films Prepared by Selenization Method Using Diethylselenide DOI: 10.1143/JJAP.51.125501(Journal) (6716243-N) DOI: 10.7567/JJAP.51.125501(Journal) ========================================================== Created: 2023-02-01 12:43:45 ConfID: 6716240 CauseID: 1560040080 OtherID: 1363321270 JT: Japanese Journal of Applied Physics MD: Zhang,51,8r,86602,2012,De-embedding of On-Chip Inductor at Millimeter-Wave Range DOI: 10.1143/JJAP.51.086602(Journal) (6716240-N) DOI: 10.7567/JJAP.51.086602(Journal) ========================================================== Created: 2023-02-01 12:43:47 ConfID: 6716241 CauseID: 1560040083 OtherID: 1363320952 JT: Japanese Journal of Applied Physics MD: Kim,51,6s,609,2012,Design Guideline of Si-Based L-Shaped Tunneling Field-Effect Transistors DOI: 10.1143/JJAP.51.06FE09(Journal) (6716241-N) DOI: 10.7567/JJAP.51.06FE09(Journal) ========================================================== Created: 2023-02-01 12:44:01 ConfID: 6716254 CauseID: 1560040122 OtherID: 1363321358 JT: Japanese Journal of Applied Physics MD: Kato,51,9r,90103,2012,X-ray Topography Used to Observe Dislocations in Epitaxially Grown Diamond Film DOI: 10.1143/JJAP.51.090103(Journal) (6716254-N) DOI: 10.7567/JJAP.51.090103(Journal) ========================================================== Created: 2023-02-01 12:44:02 ConfID: 6716255 CauseID: 1560040125 OtherID: 1363319939 JT: Japanese Journal of Applied Physics MD: Yoshino,51,10r,102403,2012,In situ Micro-Raman Investigation of Spatio-Temporal Evolution of Heat in Ultrafast Laser Microprocessing of Glass DOI: 10.1143/JJAP.51.102403(Journal) (6716255-N) DOI: 10.7567/JJAP.51.102403(Journal) ========================================================== Created: 2023-02-01 12:44:04 ConfID: 6716252 CauseID: 1560040119 OtherID: 1363321384 JT: Japanese Journal of Applied Physics MD: Liao,51,9r,90115,2012,Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors DOI: 10.1143/JJAP.51.090115(Journal) (6716252-N) DOI: 10.7567/JJAP.51.090115(Journal) ========================================================== Created: 2023-02-01 12:43:55 ConfID: 6716253 CauseID: 1560040103 OtherID: 1363319999 JT: Japanese Journal of Applied Physics MD: Yanase,51,11r,111803,2012,Solvent Effects on the Transient Characteristics of Liquid-Gate Field Effect Transistors with Silicon Substrate DOI: 10.1143/JJAP.51.111803(Journal) (6716253-N) DOI: 10.7567/JJAP.51.111803(Journal) ========================================================== Created: 2023-02-01 12:43:58 ConfID: 6716250 CauseID: 1560040108 OtherID: 1363320902 JT: Japanese Journal of Applied Physics MD: Kozawa,51,6s,601,2012,Lower Limit of Line Edge Roughness in High-Dose Exposure of Chemically Amplified Extreme Ultraviolet Resists DOI: 10.1143/JJAP.51.06FC01(Journal) (6716250-N) DOI: 10.7567/JJAP.51.06FC01(Journal) ========================================================== Created: 2023-02-01 12:43:58 ConfID: 6716251 CauseID: 1560040109 OtherID: 1363320054 JT: Japanese Journal of Applied Physics MD: Tamura,51,12r,121401,2012,Influence of Chemical Bonding States on Electrical Properties of Amorphous Carbon Nitride Films DOI: 10.1143/JJAP.51.121401(Journal) (6716251-N) DOI: 10.7567/JJAP.51.121401(Journal) ========================================================== Created: 2023-02-01 12:43:54 ConfID: 6716248 CauseID: 1560040098 OtherID: 1363320920 JT: Japanese Journal of Applied Physics MD: Chang,51,6s,604,2012,Three-Dimensional Force Sensing Device Using Carbon Nanofiber Polymer Composites: Design and Fabrication DOI: 10.1143/JJAP.51.06FD04(Journal) (6716248-N) DOI: 10.7567/JJAP.51.06FD04(Journal) ========================================================== Created: 2023-02-01 12:43:57 ConfID: 6716249 CauseID: 1560040106 OtherID: 1363320078 JT: Japanese Journal of Applied Physics MD: Okoshi,51,12r,122701,2012,F2-Laser-Induced Modification of Aluminum Thin Films into Transparent Aluminum Oxide DOI: 10.1143/JJAP.51.122701(Journal) (6716249-N) DOI: 10.7567/JJAP.51.122701(Journal) ========================================================== Created: 2023-02-01 12:42:54 ConfID: 6716198 CauseID: 1560039929 OtherID: 1363321397 JT: Japanese Journal of Applied Physics MD: Li,51,9r,93003,2012,Fabrication of Fully Epitaxial CoFe/MgO/CoFe Magnetic Tunnel Junctions on Ge(001) Substrates via a MgO Interlayer DOI: 10.1143/JJAP.51.093003(Journal) (6716198-N) DOI: 10.7567/JJAP.51.093003(Journal) ========================================================== Created: 2023-02-01 12:42:59 ConfID: 6716199 CauseID: 1560039931 OtherID: 1363321226 JT: Japanese Journal of Applied Physics MD: Nakazawa,51,8r,81801,2012,200 W Output Power at S-Band in AlGaN/GaN Heterojunction Field Effect Transistors with Field Plates on Si Substrates DOI: 10.1143/JJAP.51.081801(Journal) (6716199-N) DOI: 10.7567/JJAP.51.081801(Journal) ========================================================== Created: 2023-02-01 12:42:53 ConfID: 6716196 CauseID: 1560039927 OtherID: 1363320963 JT: Japanese Journal of Applied Physics MD: Muramatsu,51,6s,618,2012,Characterization of Low-Frequency Noise in Etched GaAs Nanowire Field-Effect Transistors Having SiNx Gate Insulator DOI: 10.1143/JJAP.51.06FE18(Journal) (6716196-N) DOI: 10.7567/JJAP.51.06FE18(Journal) ========================================================== Created: 2023-02-01 12:42:52 ConfID: 6716197 CauseID: 1560039926 OtherID: 1363321353 JT: Japanese Journal of Applied Physics MD: Ando,51,9r,90101,2012,Epitaxial Lateral Overgrowth of Diamonds on Iridium by Patterned Nucleation and Growth Method DOI: 10.1143/JJAP.51.090101(Journal) (6716197-N) DOI: 10.7567/JJAP.51.090101(Journal) ========================================================== Created: 2023-02-01 12:42:50 ConfID: 6716194 CauseID: 1560039919 OtherID: 1363321254 JT: Japanese Journal of Applied Physics MD: Umemoto,51,8r,86501,2012,Catalytic Decomposition of PH3 on Heated Tungsten Wire Surfaces DOI: 10.1143/JJAP.51.086501(Journal) (6716194-N) DOI: 10.7567/JJAP.51.086501(Journal) ========================================================== Created: 2023-02-01 12:42:53 ConfID: 6716195 CauseID: 1560039928 OtherID: 1363321393 JT: Japanese Journal of Applied Physics MD: Choi,51,9r,92501,2012,Highly-Sensitive and -Linear Cryogenic Temperature Response of Long-Period Fiber Gratings Written on B–Ge-Codoped Photosensitive Fiber DOI: 10.1143/JJAP.51.092501(Journal) (6716195-N) DOI: 10.7567/JJAP.51.092501(Journal) ========================================================== Created: 2023-02-01 12:42:48 ConfID: 6716192 CauseID: 1560039916 OtherID: 1363321409 JT: Japanese Journal of Applied Physics MD: Matsui,51,9r,91302,2012,Compensation of Native Defect Acceptors in Microcrystalline Ge and Si1-xGex Thin Films by Oxygen Incorporation: Electrical Properties and Solar Cell Performance DOI: 10.1143/JJAP.51.091302(Journal) (6716192-N) DOI: 10.7567/JJAP.51.091302(Journal) ========================================================== Created: 2023-02-01 12:42:48 ConfID: 6716193 CauseID: 1560039915 OtherID: 1363320716 JT: Japanese Journal of Applied Physics MD: Ito,51,4s,401,2012,Impact of Data Transmission over 10 Gbps on High-Density and Low-Cost Optoelectronic Module with Polynorbornene Waveguides DOI: 10.1143/JJAP.51.04DG01(Journal) (6716193-N) DOI: 10.7567/JJAP.51.04DG01(Journal) ========================================================== Created: 2023-02-01 12:43:04 ConfID: 6716206 CauseID: 1560039947 OtherID: 1363321424 JT: Japanese Journal of Applied Physics MD: Yamane,51,9r,95802,2012,Magneto-Optical Enhancement in Cavity Structure Consisted of Perpendicular Antiferromagnetically Coupled CoPt Layers DOI: 10.1143/JJAP.51.095802(Journal) (6716206-N) DOI: 10.7567/JJAP.51.095802(Journal) ========================================================== Created: 2023-02-01 12:43:00 ConfID: 6716207 CauseID: 1560039949 OtherID: 1363321430 JT: Japanese Journal of Applied Physics MD: Tawaraya,51,9r,96101,2012,Consideration of Secondary Electron Emission Effect for Probe Measurement DOI: 10.1143/JJAP.51.096101(Journal) (6716207-N) DOI: 10.7567/JJAP.51.096101(Journal) ========================================================== Created: 2023-02-01 12:42:58 ConfID: 6716204 CauseID: 1560039939 OtherID: 1363321428 JT: Japanese Journal of Applied Physics MD: Chen,51,9r,98001,2012,Analysis of Gain-Switching Characteristics Including Strong Gain Saturation Effects in Low-Dimensional Semiconductor Lasers DOI: 10.1143/JJAP.51.098001(Journal) (6716204-N) DOI: 10.7567/JJAP.51.098001(Journal) ========================================================== Created: 2023-02-01 12:43:00 ConfID: 6716205 CauseID: 1560039942 OtherID: 1363320946 JT: Japanese Journal of Applied Physics MD: Kim,51,6s,602,2012,Single-String Carbon Nanotube Field Effect Transistors Fabricated by Two-Step Dielectrophoresis DOI: 10.1143/JJAP.51.06FE02(Journal) (6716205-N) DOI: 10.7567/JJAP.51.06FE02(Journal) ========================================================== Created: 2023-02-01 12:42:56 ConfID: 6716202 CauseID: 1560039936 OtherID: 1363321416 JT: Japanese Journal of Applied Physics MD: Ren,51,9r,96602,2012,A Method for Probing the Liquid–Liquid Interface DOI: 10.1143/JJAP.51.096602(Journal) (6716202-N) DOI: 10.7567/JJAP.51.096602(Journal) ========================================================== Created: 2023-02-01 12:42:57 ConfID: 6716203 CauseID: 1560039938 OtherID: 1363321400 JT: Japanese Journal of Applied Physics MD: Takaba,51,9r,92401,2012,Simple Method of Confirming Wet Environment for Soft X-ray Microscopy to Observe Hydrated Biological Specimens DOI: 10.1143/JJAP.51.092401(Journal) (6716203-N) DOI: 10.7567/JJAP.51.092401(Journal) ========================================================== Created: 2023-02-01 12:42:56 ConfID: 6716200 CauseID: 1560039935 OtherID: 1363320013 JT: Japanese Journal of Applied Physics MD: Chen,51,11r,111002,2012,Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching DOI: 10.1143/JJAP.51.111002(Journal) (6716200-N) DOI: 10.7567/JJAP.51.111002(Journal) ========================================================== Created: 2023-02-01 12:42:57 ConfID: 6716201 CauseID: 1560039937 OtherID: 1363319935 JT: Japanese Journal of Applied Physics MD: Jin,51,10r,102101,2012,Beam Divergence and Thermal Transient Characteristics of InGaN/GaN Light Emitting Diodes with Rear Side Grown ZnO Nanorods DOI: 10.1143/JJAP.51.102101(Journal) (6716201-N) DOI: 10.7567/JJAP.51.102101(Journal) ========================================================== Created: 2023-02-01 12:43:13 ConfID: 6716214 CauseID: 1560039979 OtherID: 1363320970 JT: Japanese Journal of Applied Physics MD: Liu,51,6s,601,2012,Experimental Study of Floating-Gate-Type Metal–Oxide–Semiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application DOI: 10.1143/JJAP.51.06FF01(Journal) (6716214-N) DOI: 10.7567/JJAP.51.06FF01(Journal) ========================================================== Created: 2023-02-01 12:43:11 ConfID: 6716215 CauseID: 1560039983 OtherID: 1363321011 JT: Japanese Journal of Applied Physics MD: Horiba,51,6s,606,2012,Impact of Resist Shrinkage and Its Correction in Nanoimprint Lithography DOI: 10.1143/JJAP.51.06FJ06(Journal) (6716215-N) DOI: 10.7567/JJAP.51.06FJ06(Journal) ========================================================== Created: 2023-02-01 12:43:07 ConfID: 6716212 CauseID: 1560039967 OtherID: 1363321349 JT: Japanese Journal of Applied Physics MD: Yamada,51,9r,90105,2012,Numerical Simulations to Study Growth of Single-Crystal Diamond by Using Microwave Plasma Chemical Vapor Deposition with Reactive (H, C, N) Species DOI: 10.1143/JJAP.51.090105(Journal) (6716212-N) DOI: 10.7567/JJAP.51.090105(Journal) ========================================================== Created: 2023-02-01 12:43:10 ConfID: 6716213 CauseID: 1560039978 OtherID: 1363321429 JT: Japanese Journal of Applied Physics MD: Miyake,51,9r,97201,2012,Mechanical Vibration Characteristics for the Driving Part in Array of Microelectromechanical Systems Vibratory Gyroscopes DOI: 10.1143/JJAP.51.097201(Journal) (6716213-N) DOI: 10.7567/JJAP.51.097201(Journal) ========================================================== Created: 2023-02-01 12:43:06 ConfID: 6716210 CauseID: 1560039965 OtherID: 1363321230 JT: Japanese Journal of Applied Physics MD: Jeong,51,8r,82101,2012,Silicon-Wire Waveguide Based External Cavity Laser for Milliwatt-Order Output Power and Temperature Control Free Operation with Silicon Ring Modulator DOI: 10.1143/JJAP.51.082101(Journal) (6716210-N) DOI: 10.7567/JJAP.51.082101(Journal) ========================================================== Created: 2023-02-01 12:43:08 ConfID: 6716211 CauseID: 1560039968 OtherID: 1363320011 JT: Japanese Journal of Applied Physics MD: Yoon,51,11r,111101,2012,Higher-Order Effect of Source–Drain Series Resistance on Saturation Drain Current in Sub-20 nm Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.51.111101(Journal) (6716211-N) DOI: 10.7567/JJAP.51.111101(Journal) ========================================================== Created: 2023-02-01 12:43:02 ConfID: 6716208 CauseID: 1560039952 OtherID: 1363319949 JT: Japanese Journal of Applied Physics MD: Ansell,51,10r,101802,2012,High Temperature Piezoelectric Ceramics Based on xPbTiO3–(1-x)Bi(Sc1/2Me1/4Ti1/4)O3 (Me = Zn, Mg) Ternary Perovskites DOI: 10.1143/JJAP.51.101802(Journal) (6716208-N) DOI: 10.7567/JJAP.51.101802(Journal) ========================================================== Created: 2023-02-01 12:43:05 ConfID: 6716209 CauseID: 1560039960 OtherID: 1363321426 JT: Japanese Journal of Applied Physics MD: Lee,51,9r,96503,2012,Effective Carbon Contaminant Cleaning Condition Using Ozone Dissolved Water and Megasonic for Ru-Capped Extreme Ultraviolet Lithography Mask DOI: 10.1143/JJAP.51.096503(Journal) (6716209-N) DOI: 10.7567/JJAP.51.096503(Journal) ========================================================== Created: 2023-02-01 12:43:23 ConfID: 6716222 CauseID: 1560040018 OtherID: 1363319956 JT: Japanese Journal of Applied Physics MD: Mori,51,10r,104101,2012,Experimental Evidence for Involvement of Interface States in Random Telegraph Noise in Junction Leakage Current of Metal–Oxide–Semiconductor Field-Effect Transistor DOI: 10.1143/JJAP.51.104101(Journal) (6716222-N) DOI: 10.7567/JJAP.51.104101(Journal) ========================================================== Created: 2023-02-01 12:43:24 ConfID: 6716223 CauseID: 1560040020 OtherID: 1363321387 JT: Japanese Journal of Applied Physics MD: Watanabe,51,9r,90126,2012,Low Friction Property of Diamond-Like Carbon Coating Films and Oxygen Transmission Ratio of Amorphous Carbon Films Deposited by Advanced Coating Processes DOI: 10.1143/JJAP.51.090126(Journal) (6716223-N) DOI: 10.7567/JJAP.51.090126(Journal) ========================================================== Created: 2023-02-01 12:43:22 ConfID: 6716220 CauseID: 1560040015 OtherID: 1363319938 JT: Japanese Journal of Applied Physics MD: Kikuchi,51,10r,103002,2012,Correlation between Switching Field and Microstructure of Individual Co/Pt Dots DOI: 10.1143/JJAP.51.103002(Journal) (6716220-N) DOI: 10.7567/JJAP.51.103002(Journal) ========================================================== Created: 2023-02-01 12:43:22 ConfID: 6716221 CauseID: 1560040016 OtherID: 1363319998 JT: Japanese Journal of Applied Physics MD: Lam,51,11r,111501,2012,Fourier Transform Infrared Spectroscopy of Low-k Dielectric Material on Patterned Wafers DOI: 10.1143/JJAP.51.111501(Journal) (6716221-N) DOI: 10.7567/JJAP.51.111501(Journal) ========================================================== Created: 2023-02-01 12:43:17 ConfID: 6716218 CauseID: 1560040003 OtherID: 1363319937 JT: Japanese Journal of Applied Physics MD: Lee,51,10r,102102,2012,Strong Light-Extraction Enhancement of GaN-Based Light-Emitting Diodes with Top and Sidewall GaOOH Nanorod Arrays DOI: 10.1143/JJAP.51.102102(Journal) (6716218-N) DOI: 10.7567/JJAP.51.102102(Journal) ========================================================== Created: 2023-02-01 12:43:16 ConfID: 6716219 CauseID: 1560040001 OtherID: 1363319925 JT: Japanese Journal of Applied Physics MD: Weis,51,10r,100205,2012,Contact Resistance as an Origin of the Channel-Length-Dependent Threshold Voltage in Organic Field-Effect Transistors DOI: 10.1143/JJAP.51.100205(Journal) (6716219-N) DOI: 10.7567/JJAP.51.100205(Journal) ========================================================== Created: 2023-02-01 12:43:12 ConfID: 6716216 CauseID: 1560039985 OtherID: 1363321406 JT: Japanese Journal of Applied Physics MD: Furukawa,51,9r,94302,2012,Calculation of Temperature Coefficient of Resistance for Potential Barrier Structure for Bolometer in Uncooled Infrared Image Sensor DOI: 10.1143/JJAP.51.094302(Journal) (6716216-N) DOI: 10.7567/JJAP.51.094302(Journal) ========================================================== Created: 2023-02-01 12:43:16 ConfID: 6716217 CauseID: 1560040000 OtherID: 1363321423 JT: Japanese Journal of Applied Physics MD: Matsutani,51,9r,98002,2012,SF6-Based Deep Reactive Ion Etching of (001) Rutile TiO2 Substrate for Photonic Crystal Structure with Wide Complete Photonic Band Gap DOI: 10.1143/JJAP.51.098002(Journal) (6716217-N) DOI: 10.7567/JJAP.51.098002(Journal) ========================================================== Created: 2023-02-01 12:42:17 ConfID: 6716166 CauseID: 1560039844 OtherID: 1363321401 JT: Japanese Journal of Applied Physics MD: Li,51,9r,92301,2012,InGaN/GaN Multiple Quantum Well Solar Cells with Good Open-Circuit Voltage and Concentrator Action DOI: 10.1143/JJAP.51.092301(Journal) (6716166-N) DOI: 10.7567/JJAP.51.092301(Journal) ========================================================== Created: 2023-02-01 12:42:17 ConfID: 6716167 CauseID: 1560039845 OtherID: 1363321398 JT: Japanese Journal of Applied Physics MD: Song,51,9r,92101,2012,Optical Properties of Undoped a-Plane GaN Grown with Different Initial Growth Pressures DOI: 10.1143/JJAP.51.092101(Journal) (6716167-N) DOI: 10.7567/JJAP.51.092101(Journal) ========================================================== Created: 2023-02-01 12:42:20 ConfID: 6716164 CauseID: 1560039839 OtherID: 1363320912 JT: Japanese Journal of Applied Physics MD: Ohashi,51,6s,610,2012,Photoresist Shrinkage Caused by Single-Line Scan of Electron Beam DOI: 10.1143/JJAP.51.06FB10(Journal) (6716164-N) DOI: 10.7567/JJAP.51.06FB10(Journal) ========================================================== Created: 2023-02-01 12:42:15 ConfID: 6716165 CauseID: 1560039841 OtherID: 1363321382 JT: Japanese Journal of Applied Physics MD: Makino,51,9r,90116,2012,Device Design of Diamond Schottky-pn Diode for Low-Loss Power Electronics DOI: 10.1143/JJAP.51.090116(Journal) (6716165-N) DOI: 10.7567/JJAP.51.090116(Journal) ========================================================== Created: 2023-02-01 12:42:00 ConfID: 6716162 CauseID: 1560039802 OtherID: 1363321375 JT: Japanese Journal of Applied Physics MD: Noborisaka,51,9r,90117,2012,Synthesis of Diamond-Like Carbon Films on Planar and Non-Planar Geometries by the Atmospheric Pressure Plasma Chemical Vapor Deposition Method DOI: 10.1143/JJAP.51.090117(Journal) (6716162-N) DOI: 10.7567/JJAP.51.090117(Journal) ========================================================== Created: 2023-02-01 12:42:18 ConfID: 6716163 CauseID: 1560039837 OtherID: 1363320765 JT: Japanese Journal of Applied Physics MD: Hirai,51,4s,401,2012,Diameter Dependence of Sub-Terahertz AC Response of Metallic Carbon Nanotubes with a Single Atomic Vacancy DOI: 10.1143/JJAP.51.04DN01(Journal) (6716163-N) DOI: 10.7567/JJAP.51.04DN01(Journal) ========================================================== Created: 2023-02-01 12:42:11 ConfID: 6716160 CauseID: 1560039829 OtherID: 1363321094 JT: Japanese Journal of Applied Physics MD: Jongsukswat,51,7r,76702,2012,Determination of Constant Strain Gradients of Elastically Bent Crystal Using X-ray Mirage Fringes DOI: 10.1143/JJAP.51.076702(Journal) (6716160-N) DOI: 10.7567/JJAP.51.076702(Journal) ========================================================== Created: 2023-02-01 12:42:18 ConfID: 6716161 CauseID: 1560039836 OtherID: 1363320906 JT: Japanese Journal of Applied Physics MD: Komori,51,6s,602,2012,Electron Beam Lithography of 15×15 nm2 Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer DOI: 10.1143/JJAP.51.06FB02(Journal) (6716161-N) DOI: 10.7567/JJAP.51.06FB02(Journal) ========================================================== Created: 2023-02-01 12:42:26 ConfID: 6716174 CauseID: 1560039867 OtherID: 1363319926 JT: Japanese Journal of Applied Physics MD: Ito,51,10r,100207,2012,Growth and Band Gap Control of Corundum-Structured α-(AlGa)2O3 Thin Films on Sapphire by Spray-Assisted Mist Chemical Vapor Deposition DOI: 10.1143/JJAP.51.100207(Journal) (6716174-N) DOI: 10.7567/JJAP.51.100207(Journal) ========================================================== Created: 2023-02-01 12:42:27 ConfID: 6716175 CauseID: 1560039869 OtherID: 1363320003 JT: Japanese Journal of Applied Physics MD: Heya,51,11r,110204,2012,Decomposition of Pentacene Molecules by Heated Tungsten Mesh DOI: 10.1143/JJAP.51.110204(Journal) (6716175-N) DOI: 10.7567/JJAP.51.110204(Journal) ========================================================== Created: 2023-02-01 12:42:25 ConfID: 6716172 CauseID: 1560039864 OtherID: 1363320702 JT: Japanese Journal of Applied Physics MD: Oh,51,4s,416,2012,Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO2-Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation DOI: 10.1143/JJAP.51.04DD16(Journal) (6716172-N) DOI: 10.7567/JJAP.51.04DD16(Journal) ========================================================== Created: 2023-02-01 12:42:26 ConfID: 6716173 CauseID: 1560039866 OtherID: 1363319976 JT: Japanese Journal of Applied Physics MD: Tsurumi,51,10r,106503,2012,Energy-Filtered Secondary-Electron Imaging for Nanoscale Dopant Mapping by Applying a Reverse Bias Voltage DOI: 10.1143/JJAP.51.106503(Journal) (6716173-N) DOI: 10.7567/JJAP.51.106503(Journal) ========================================================== Created: 2023-02-01 12:42:22 ConfID: 6716170 CauseID: 1560039855 OtherID: 1363319986 JT: Japanese Journal of Applied Physics MD: Promros,51,10r,108006,2012,Effects of Hydrogen Passivation on Near-Infrared Photodetection of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes DOI: 10.1143/JJAP.51.108006(Journal) (6716170-N) DOI: 10.7567/JJAP.51.108006(Journal) ========================================================== Created: 2023-02-01 12:42:19 ConfID: 6716171 CauseID: 1560039838 OtherID: 1363320904 JT: Japanese Journal of Applied Physics MD: Lee,51,6s,606,2012,Optimized Multigrid Strategy for Accurate Flare Modeling with Three-Dimensional Mask Effect in Extreme-Ultraviolet Lithography DOI: 10.1143/JJAP.51.06FB06(Journal) (6716171-N) DOI: 10.7567/JJAP.51.06FB06(Journal) ========================================================== Created: 2023-02-01 12:42:20 ConfID: 6716168 CauseID: 1560039852 OtherID: 1363321427 JT: Japanese Journal of Applied Physics MD: Matsuoka,51,9r,96201,2012,One Dimensional Modeling of Radio Frequency Electric Field Penetration into Magnetized Plasmas DOI: 10.1143/JJAP.51.096201(Journal) (6716168-N) DOI: 10.7567/JJAP.51.096201(Journal) ========================================================== Created: 2023-02-01 12:42:21 ConfID: 6716169 CauseID: 1560039854 OtherID: 1363320684 JT: Japanese Journal of Applied Physics MD: Miyaji,51,4s,402,2012,Zero Additional Process, Local Charge Trap, Embedded Flash Memory with Drain-Side Assisted Erase Scheme Using Minimum Channel Length/Width Standard Complemental Metal–Oxide–Semiconductor Single Transistor Cell DOI: 10.1143/JJAP.51.04DD02(Journal) (6716169-N) DOI: 10.7567/JJAP.51.04DD02(Journal) ========================================================== Created: 2023-02-01 12:42:39 ConfID: 6716182 CauseID: 1560039888 OtherID: 1363321383 JT: Japanese Journal of Applied Physics MD: Nose,51,9r,90127,2012,Nanoindentation Fracture Behaviors of Diamond-Like Carbon Film on Aluminum Alloy with Different Interface Toughnesses DOI: 10.1143/JJAP.51.090127(Journal) (6716182-N) DOI: 10.7567/JJAP.51.090127(Journal) ========================================================== Created: 2023-02-01 12:42:35 ConfID: 6716183 CauseID: 1560039892 OtherID: 1363321386 JT: Japanese Journal of Applied Physics MD: Jeong,51,9r,90202,2012,Passivation of the Exposed Silver Electrodes on a Tuning Fork Crystal Oscillator by Chronoamperometry DOI: 10.1143/JJAP.51.090202(Journal) (6716183-N) DOI: 10.7567/JJAP.51.090202(Journal) ========================================================== Created: 2023-02-01 12:42:35 ConfID: 6716180 CauseID: 1560039882 OtherID: 1363321399 JT: Japanese Journal of Applied Physics MD: Fujishiro,51,9r,93005,2012,Trapped Field Profiles on Square GdBaCuO Bulks with Different Arrangement of Growth Sector Boundaries DOI: 10.1143/JJAP.51.093005(Journal) (6716180-N) DOI: 10.7567/JJAP.51.093005(Journal) ========================================================== Created: 2023-02-01 12:42:39 ConfID: 6716181 CauseID: 1560039891 OtherID: 1363320031 JT: Japanese Journal of Applied Physics MD: Watanabe,51,11r,112401,2012,Wavelength-Scanning Method for Identifying Vertical Position of Film Using Surface Plasmon Microscopes DOI: 10.1143/JJAP.51.112401(Journal) (6716181-N) DOI: 10.7567/JJAP.51.112401(Journal) ========================================================== Created: 2023-02-01 12:42:31 ConfID: 6716178 CauseID: 1560039877 OtherID: 1363320964 JT: Japanese Journal of Applied Physics MD: Tsai,51,6s,612,2012,Heterojunction Photodiodes Based on Honeycomb Structures for Ultraviolet Detection DOI: 10.1143/JJAP.51.06FE12(Journal) (6716178-N) DOI: 10.7567/JJAP.51.06FE12(Journal) ========================================================== Created: 2023-02-01 12:42:31 ConfID: 6716179 CauseID: 1560039878 OtherID: 1363320745 JT: Japanese Journal of Applied Physics MD: Sugawa,51,4s,404,2012,Tuning Optical Properties of Two-Dimensional Ordered Arrays of Silica/Gold and Silver Core/Shell Structured Nanoparticles in Near-Infrared Region DOI: 10.1143/JJAP.51.04DH04(Journal) (6716179-N) DOI: 10.7567/JJAP.51.04DH04(Journal) ========================================================== Created: 2023-02-01 12:42:34 ConfID: 6716176 CauseID: 1560039874 OtherID: 1363319983 JT: Japanese Journal of Applied Physics MD: Kozawa,51,10r,106701,2012,Resist Properties Required for 6.67 nm Extreme Ultraviolet Lithography DOI: 10.1143/JJAP.51.106701(Journal) (6716176-N) DOI: 10.7567/JJAP.51.106701(Journal) ========================================================== Created: 2023-02-01 12:42:34 ConfID: 6716177 CauseID: 1560039875 OtherID: 1363320916 JT: Japanese Journal of Applied Physics MD: Chen,51,6s,603,2012,Optimization of Ge–Sb–Sn–O Films for Thermal Lithography of Submicron Structures DOI: 10.1143/JJAP.51.06FC03(Journal) (6716177-N) DOI: 10.7567/JJAP.51.06FC03(Journal) ========================================================== Created: 2023-02-01 12:42:46 ConfID: 6716190 CauseID: 1560039911 OtherID: 1363320766 JT: Japanese Journal of Applied Physics MD: Machida,51,4s,405,2012,Reduction of Power Loss of Zero Current Switching Converter by Optimizing Power Devices DOI: 10.1143/JJAP.51.04DP05(Journal) (6716190-N) DOI: 10.7567/JJAP.51.04DP05(Journal) ========================================================== Created: 2023-02-01 12:42:46 ConfID: 6716191 CauseID: 1560039912 OtherID: 1363320048 JT: Japanese Journal of Applied Physics MD: Djezzar,51,11r,116602,2012,A New Method for Negative Bias Temperature Instability Assessment in P-Channel Metal Oxide Semiconductor Transistors DOI: 10.1143/JJAP.51.116602(Journal) (6716191-N) DOI: 10.7567/JJAP.51.116602(Journal) ========================================================== Created: 2023-02-01 12:42:32 ConfID: 6716188 CauseID: 1560039879 OtherID: 1363321229 JT: Japanese Journal of Applied Physics MD: Liu,51,8r,81502,2012,Phase Structure and Microwave Dielectric Properties of Low-Firing Zn1-x(Li1/2Sm1/2)xWO4 Ceramics DOI: 10.1143/JJAP.51.081502(Journal) (6716188-N) DOI: 10.7567/JJAP.51.081502(Journal) ========================================================== Created: 2023-02-01 12:42:42 ConfID: 6716189 CauseID: 1560039907 OtherID: 1363320944 JT: Japanese Journal of Applied Physics MD: Itaya,51,6s,622,2012,Recovery Force of Carbon Nanotube Shape Memory DOI: 10.1143/JJAP.51.06FD22(Journal) (6716189-N) DOI: 10.7567/JJAP.51.06FD22(Journal) ========================================================== Created: 2023-02-01 12:42:43 ConfID: 6716186 CauseID: 1560039899 OtherID: 1363321422 JT: Japanese Journal of Applied Physics MD: Kuo,51,9r,95202,2012,Fabrication of 20 nm Shallow Nanofluidic Channels Using Coverslip Thin Glass–Glass Fusion Bonding Method DOI: 10.1143/JJAP.51.095202(Journal) (6716186-N) DOI: 10.7567/JJAP.51.095202(Journal) ========================================================== Created: 2023-02-01 12:42:41 ConfID: 6716187 CauseID: 1560039905 OtherID: 1363321394 JT: Japanese Journal of Applied Physics MD: Oida,51,9r,91601,2012,Cathode Work Function Dependence of Electron Transport Efficiency through Buffer Layer in Organic Solar Cells DOI: 10.1143/JJAP.51.091601(Journal) (6716187-N) DOI: 10.7567/JJAP.51.091601(Journal) ========================================================== Created: 2023-02-01 12:42:36 ConfID: 6716184 CauseID: 1560039894 OtherID: 1363321231 JT: Japanese Journal of Applied Physics MD: Sato,51,8r,82402,2012,Effects of Synthesis Process on Luminescence Properties and Structure of Mesoporous Carbon–Silica Nanocomposite DOI: 10.1143/JJAP.51.082402(Journal) (6716184-N) DOI: 10.7567/JJAP.51.082402(Journal) ========================================================== Created: 2023-02-01 12:42:36 ConfID: 6716185 CauseID: 1560039895 OtherID: 1363320909 JT: Japanese Journal of Applied Physics MD: Suzuki,51,6s,601,2012,Graphene Growth from Spin-Coated Polymers without a Gas DOI: 10.1143/JJAP.51.06FD01(Journal) (6716185-N) DOI: 10.7567/JJAP.51.06FD01(Journal) ========================================================== Created: 2023-01-05 12:05:51 ConfID: 6691814 CauseID: 1557137204 OtherID: 1363323819 JT: Japanese Journal of Applied Physics MD: Yamada,50,5s1,505,2011,Diamond Conditioner Microwear Effect on Pad Surface Height Distribution in Tungsten Chemical Mechanical Polishing DOI: 10.1143/JJAP.50.05EC05(Journal) (6691814-N) DOI: 10.7567/JJAP.50.05EC05(Journal) ========================================================== Created: 2023-02-01 12:46:45 ConfID: 6716390 CauseID: 1560040604 OtherID: 1363321332 JT: Japanese Journal of Applied Physics MD: Park,51,8s2,801,2012,Application of Solid Immersion Lens-Based Near-Field Recording Technology to High-Speed Plasmonic Nanolithography DOI: 10.1143/JJAP.51.08JF01(Journal) (6716390-N) DOI: 10.7567/JJAP.51.08JF01(Journal) ========================================================== Created: 2023-01-05 12:05:57 ConfID: 6691815 CauseID: 1557137216 OtherID: 1363323893 JT: Japanese Journal of Applied Physics MD: Huseynov,50,5s2,502,2011,Peculiarities of Current–Voltage Characteristics of Al–p-CdxHg1-xTe Tunnel Metal–Insulator–Semiconductor Structure DOI: 10.1143/JJAP.50.05FH02(Journal) (6691815-N) DOI: 10.7567/JJAP.50.05FH02(Journal) ========================================================== Created: 2023-02-01 12:46:47 ConfID: 6716391 CauseID: 1560040607 OtherID: 1363320683 JT: Japanese Journal of Applied Physics MD: Feng,51,4s,406,2012,Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties DOI: 10.1143/JJAP.51.04DC06(Journal) (6716391-N) DOI: 10.7567/JJAP.51.04DC06(Journal) ========================================================== Created: 2023-01-05 12:03:04 ConfID: 6691812 CauseID: 1557136794 OtherID: 1363323556 JT: Japanese Journal of Applied Physics MD: Kosemura,50,4s,406,2011,Quantitative Analysis of Stress Relaxation in Transmission Electron Microscopy Samples by Raman Spectroscopy with a High-Numerical Aperture Lens DOI: 10.1143/JJAP.50.04DA06(Journal) (6691812-N) DOI: 10.7567/JJAP.50.04DA06(Journal) ========================================================== Created: 2023-02-01 12:46:40 ConfID: 6716388 CauseID: 1560040586 OtherID: 1363320772 JT: Japanese Journal of Applied Physics MD: Du,51,4s,401,2012,Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n+-BaSi2/p+-Si Tunnel Junction to Undoped BaSi2 Overlayers DOI: 10.1143/JJAP.51.04DP01(Journal) (6716388-N) DOI: 10.7567/JJAP.51.04DP01(Journal) ========================================================== Created: 2023-01-05 12:03:09 ConfID: 6691813 CauseID: 1557136803 OtherID: 1363323543 JT: Japanese Journal of Applied Physics MD: Kushibiki,50,4s,416,2011,Fabrication of Silicon Pillar with 25 nm Half Pitch Using New Multiple Double Patterning Technique DOI: 10.1143/JJAP.50.04DA16(Journal) (6691813-N) DOI: 10.7567/JJAP.50.04DA16(Journal) ========================================================== Created: 2023-02-01 12:46:49 ConfID: 6716389 CauseID: 1560040603 OtherID: 1363320689 JT: Japanese Journal of Applied Physics MD: Liu,51,4s,403,2012,Fabrication of Floating-Gate-Type Fin-Channel Double- and Tri-Gate Flash Memories and Comparative Study of Their Electrical Characteristics DOI: 10.1143/JJAP.51.04DD03(Journal) (6716389-N) DOI: 10.7567/JJAP.51.04DD03(Journal) ========================================================== Created: 2023-01-05 12:05:37 ConfID: 6691810 CauseID: 1557137180 OtherID: 1363323877 JT: Japanese Journal of Applied Physics MD: Aghdami,50,5s2,505,2011,Switching of Multiples Solitons in Arrays of Coupled Cavities DOI: 10.1143/JJAP.50.05FG05(Journal) (6691810-N) DOI: 10.7567/JJAP.50.05FG05(Journal) ========================================================== Created: 2023-02-01 12:46:41 ConfID: 6716386 CauseID: 1560040593 OtherID: 1363321305 JT: Japanese Journal of Applied Physics MD: Ohshima,51,8s1,808,2012,Synthesis of Platinum Nanodots Using Organ-Metal Solutions DOI: 10.1143/JJAP.51.08HF08(Journal) (6716386-N) DOI: 10.7567/JJAP.51.08HF08(Journal) ========================================================== Created: 2023-01-05 12:05:49 ConfID: 6691811 CauseID: 1557137199 OtherID: 1363323815 JT: Japanese Journal of Applied Physics MD: Shima,50,5s1,504,2011,Electrochemical Reactions During Ru Chemical Mechanical Planarization and Safety Considerations DOI: 10.1143/JJAP.50.05EC04(Journal) (6691811-N) DOI: 10.7567/JJAP.50.05EC04(Journal) ========================================================== Created: 2023-02-01 12:46:42 ConfID: 6716387 CauseID: 1560040596 OtherID: 1363320715 JT: Japanese Journal of Applied Physics MD: Kim,51,4s,408,2012,Wireless Charge Based Capacitance Measurement Circuits with On-Chip Spiral Inductor for Radio Frequency Identification Biosensor DOI: 10.1143/JJAP.51.04DE08(Journal) (6716387-N) DOI: 10.7567/JJAP.51.04DE08(Journal) ========================================================== Created: 2023-01-05 12:05:37 ConfID: 6691808 CauseID: 1557137179 OtherID: 1363323763 JT: Japanese Journal of Applied Physics MD: Nemoto,50,5r,54301,2011,Quantification of Superiority of Broad-Buffer Diodes DOI: 10.1143/JJAP.50.054301(Journal) (6691808-N) DOI: 10.7567/JJAP.50.054301(Journal) ========================================================== Created: 2023-02-01 12:46:27 ConfID: 6716384 CauseID: 1560040559 OtherID: 1363320566 JT: Japanese Journal of Applied Physics MD: Lee,51,3s,303,2012,Effect of Channel Length on the Reliability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors DOI: 10.1143/JJAP.51.03CB03(Journal) (6716384-N) DOI: 10.7567/JJAP.51.03CB03(Journal) ========================================================== Created: 2023-01-05 12:03:03 ConfID: 6691809 CauseID: 1557136793 OtherID: 1363323540 JT: Japanese Journal of Applied Physics MD: Kikuchi,50,4r,46505,2011,Uniform Magnetic Dot Fabrication by Nanoindentation Lithography DOI: 10.1143/JJAP.50.046505(Journal) (6691809-N) DOI: 10.7567/JJAP.50.046505(Journal) ========================================================== Created: 2023-02-01 12:46:43 ConfID: 6716385 CauseID: 1560040589 OtherID: 1363321141 JT: Japanese Journal of Applied Physics MD: Takayanagi,51,7s,708,2012,Wideband Multimode Transducer Consisting of c-Axis Tilted ZnO/c-Axis Normal ZnO Multilayer DOI: 10.1143/JJAP.51.07GC08(Journal) (6716385-N) DOI: 10.7567/JJAP.51.07GC08(Journal) ========================================================== Created: 2023-01-05 12:06:03 ConfID: 6691822 CauseID: 1557137229 OtherID: 1363323910 JT: Japanese Journal of Applied Physics MD: Khrypunov,50,5s2,504,2011,Single-Phase Cadmium Telluride Thin Films Deposited by Electroless Electrodeposition DOI: 10.1143/JJAP.50.05FH04(Journal) (6691822-N) DOI: 10.7567/JJAP.50.05FH04(Journal) ========================================================== Created: 2023-02-01 12:46:59 ConfID: 6716398 CauseID: 1560040628 OtherID: 1363321197 JT: Japanese Journal of Applied Physics MD: Shimazaki,51,7s,725,2012,Three-Dimensional Quantitative Optical Measurement of Asymmetrically Focused Ultrasound Pressure Field DOI: 10.1143/JJAP.51.07GF25(Journal) (6716398-N) DOI: 10.7567/JJAP.51.07GF25(Journal) ========================================================== Created: 2023-01-05 12:03:06 ConfID: 6691823 CauseID: 1557136807 OtherID: 1363323544 JT: Japanese Journal of Applied Physics MD: Adachi,50,4s,408,2011,Analysis of Local Leakage Current of Pr-Oxide Thin Films with Conductive Atomic Force Microscopy DOI: 10.1143/JJAP.50.04DA08(Journal) (6691823-N) DOI: 10.7567/JJAP.50.04DA08(Journal) ========================================================== Created: 2023-02-01 12:47:00 ConfID: 6716399 CauseID: 1560040633 OtherID: 1363320704 JT: Japanese Journal of Applied Physics MD: Sasaki,51,4s,405,2012,High Speed Frequency-Mapping-Based Associative Memory Using Compact Multi-Bit Encoders and a Path-Selecting Scheme DOI: 10.1143/JJAP.51.04DE05(Journal) (6716399-N) DOI: 10.7567/JJAP.51.04DE05(Journal) ========================================================== Created: 2023-01-05 12:06:03 ConfID: 6691820 CauseID: 1557137221 OtherID: 1363323862 JT: Japanese Journal of Applied Physics MD: Seyidov,50,5s2,507,2011,Charged Defects as an Origin of the Memory Effect in Incommensurate Phase of TlInS2 Ferroelectric–Semiconductors DOI: 10.1143/JJAP.50.05FD07(Journal) (6691820-N) DOI: 10.7567/JJAP.50.05FD07(Journal) ========================================================== Created: 2023-02-01 12:46:58 ConfID: 6716396 CauseID: 1560040626 OtherID: 1363321112 JT: Japanese Journal of Applied Physics MD: Hasegawa,51,7s,704,2012,Staggered Grid with Collocated Grid Points of Velocities for Modeling Propagation of Elastic Waves in Anisotropic Solids by Finite-Difference Time Domain Method DOI: 10.1143/JJAP.51.07GB04(Journal) (6716396-N) DOI: 10.7567/JJAP.51.07GB04(Journal) ========================================================== Created: 2023-01-05 12:06:02 ConfID: 6691821 CauseID: 1557137228 OtherID: 1363323861 JT: Japanese Journal of Applied Physics MD: Alekperov,50,5s2,507,2011,Dielectric Anomaly and Conductivity at Ferroelectric Phase Transition in TlInS2 Doped with Different Impurities DOI: 10.1143/JJAP.50.05FC07(Journal) (6691821-N) DOI: 10.7567/JJAP.50.05FC07(Journal) ========================================================== Created: 2023-02-01 12:46:59 ConfID: 6716397 CauseID: 1560040629 OtherID: 1363320707 JT: Japanese Journal of Applied Physics MD: Ryoo,51,4s,407,2012,Reset Current Reduction with Excellent Filament Controllability by Using Area Minimized and Field Enhanced Unipolar Resistive Random Access Memory Structure DOI: 10.1143/JJAP.51.04DD07(Journal) (6716397-N) DOI: 10.7567/JJAP.51.04DD07(Journal) ========================================================== Created: 2023-01-05 12:03:05 ConfID: 6691818 CauseID: 1557136805 OtherID: 1363323546 JT: Japanese Journal of Applied Physics MD: Yamaguchi,50,4s,402,2011,Analytical Approach for Enhancement of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Performance with Carbon-Doped Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing DOI: 10.1143/JJAP.50.04DA02(Journal) (6691818-N) DOI: 10.7567/JJAP.50.04DA02(Journal) ========================================================== Created: 2023-02-01 12:46:53 ConfID: 6716394 CauseID: 1560040617 OtherID: 1363320852 JT: Japanese Journal of Applied Physics MD: Fukuda,51,5s,501,2012,Influence of Wafer Edge Geometry on Removal Rate Profile in Chemical Mechanical Polishing: Wafer Edge Roll-Off and Notch DOI: 10.1143/JJAP.51.05EF01(Journal) (6716394-N) DOI: 10.7567/JJAP.51.05EF01(Journal) ========================================================== Created: 2023-01-05 12:03:05 ConfID: 6691819 CauseID: 1557136806 OtherID: 1363323547 JT: Japanese Journal of Applied Physics MD: Matsumoto,50,4s,407,2011,Activation of As Atoms in Ultrashallow Junction during Milli- and Microsecond Annealing Induced by Thermal-Plasma-Jet Irradiation DOI: 10.1143/JJAP.50.04DA07(Journal) (6691819-N) DOI: 10.7567/JJAP.50.04DA07(Journal) ========================================================== Created: 2023-02-01 12:46:57 ConfID: 6716395 CauseID: 1560040624 OtherID: 1363320710 JT: Japanese Journal of Applied Physics MD: Zhang,51,4s,408,2012,Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power DOI: 10.1143/JJAP.51.04DD08(Journal) (6716395-N) DOI: 10.7567/JJAP.51.04DD08(Journal) ========================================================== Created: 2023-01-05 12:05:58 ConfID: 6691816 CauseID: 1557137218 OtherID: 1363323820 JT: Japanese Journal of Applied Physics MD: Asano,50,5s1,508,2011,Disappearance of Barrier Metal during Cu Chemical Mechanical Planarization Processing and Its Mechanism DOI: 10.1143/JJAP.50.05EC08(Journal) (6691816-N) DOI: 10.7567/JJAP.50.05EC08(Journal) ========================================================== Created: 2023-02-01 12:46:52 ConfID: 6716392 CauseID: 1560040615 OtherID: 1363320685 JT: Japanese Journal of Applied Physics MD: Ito,51,4s,406,2012,Oxygen-Induced Barrier Failure in Ti-Based Self-Formed and Ta/TaN Barriers for Cu Interconnects DOI: 10.1143/JJAP.51.04DB06(Journal) (6716392-N) DOI: 10.7567/JJAP.51.04DB06(Journal) ========================================================== Created: 2023-01-05 12:03:09 ConfID: 6691817 CauseID: 1557136804 OtherID: 1363323554 JT: Japanese Journal of Applied Physics MD: Ohuchi,50,4s,403,2011,Accurate Measurement of Silicide Specific Contact Resistivity by Cross Bridge Kelvin Resistor for 28 nm Complementary Metal–Oxide–Semiconductor Technology and Beyond DOI: 10.1143/JJAP.50.04DA03(Journal) (6691817-N) DOI: 10.7567/JJAP.50.04DA03(Journal) ========================================================== Created: 2023-02-01 12:46:53 ConfID: 6716393 CauseID: 1560040616 OtherID: 1363320699 JT: Japanese Journal of Applied Physics MD: Miyaji,51,4s,412,2012,Scaling Trends and Tradeoffs between Short Channel Effect and Channel Boosting Characteristics in Sub-20 nm Bulk/Silicon-on-Insulator NAND Flash Memory DOI: 10.1143/JJAP.51.04DD12(Journal) (6716393-N) DOI: 10.7567/JJAP.51.04DD12(Journal) ========================================================== Created: 2023-01-05 12:06:14 ConfID: 6691830 CauseID: 1557137248 OtherID: 1363323817 JT: Japanese Journal of Applied Physics MD: Fujita,50,5s1,509,2011,Development of Original End Point Detection System Utilizing Eddy Current Variation Due to Skin Effect in Chemical Mechanical Polishing DOI: 10.1143/JJAP.50.05EC09(Journal) (6691830-N) DOI: 10.7567/JJAP.50.05EC09(Journal) ========================================================== Created: 2023-02-01 12:47:04 ConfID: 6716406 CauseID: 1560040641 OtherID: 1363320719 JT: Japanese Journal of Applied Physics MD: Honda,51,4s,404,2012,Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies DOI: 10.1143/JJAP.51.04DF04(Journal) (6716406-N) DOI: 10.7567/JJAP.51.04DF04(Journal) ========================================================== Created: 2023-01-05 12:03:14 ConfID: 6691831 CauseID: 1557136814 OtherID: 1363323508 JT: Japanese Journal of Applied Physics MD: Zhang,50,4r,42703,2011,Generation of Quasi-CW Deep Ultraviolet Light below 200 nm by Two Successive Cavity Enhanced Second Harmonic Generators DOI: 10.1143/JJAP.50.042703(Journal) (6691831-N) DOI: 10.7567/JJAP.50.042703(Journal) ========================================================== Created: 2023-02-01 12:47:05 ConfID: 6716407 CauseID: 1560040645 OtherID: 1363320709 JT: Japanese Journal of Applied Physics MD: Jana,51,4s,417,2012,Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure DOI: 10.1143/JJAP.51.04DD17(Journal) (6716407-N) DOI: 10.7567/JJAP.51.04DD17(Journal) ========================================================== Created: 2023-01-05 12:06:07 ConfID: 6691828 CauseID: 1557137236 OtherID: 1363323794 JT: Japanese Journal of Applied Physics MD: Komatsu,50,5s1,510,2011,Mechanism Verification of Electrochemical Migration of Fine Cu Wiring DOI: 10.1143/JJAP.50.05EA10(Journal) (6691828-N) DOI: 10.7567/JJAP.50.05EA10(Journal) ========================================================== Created: 2023-02-01 12:47:03 ConfID: 6716404 CauseID: 1560040639 OtherID: 1363320718 JT: Japanese Journal of Applied Physics MD: Zhang,51,4s,410,2012,Fully Parallel Self-Learning Analog Support Vector Machine Employing Compact Gaussian Generation Circuits DOI: 10.1143/JJAP.51.04DE10(Journal) (6716404-N) DOI: 10.7567/JJAP.51.04DE10(Journal) ========================================================== Created: 2023-01-05 12:06:14 ConfID: 6691829 CauseID: 1557137247 OtherID: 1363323801 JT: Japanese Journal of Applied Physics MD: Meled,50,5s1,501,2011,Analysis of A Novel Slurry Injection System in Chemical Mechanical Planarization DOI: 10.1143/JJAP.50.05EC01(Journal) (6691829-N) DOI: 10.7567/JJAP.50.05EC01(Journal) ========================================================== Created: 2023-02-01 12:47:04 ConfID: 6716405 CauseID: 1560040640 OtherID: 1363320575 JT: Japanese Journal of Applied Physics MD: Sameshima,51,3s,306,2012,Surface Passivation of Crystalline Silicon by Combination of Amorphous Silicon Deposition with High-Pressure H2O Vapor Heat Treatment DOI: 10.1143/JJAP.51.03CA06(Journal) (6716405-N) DOI: 10.7567/JJAP.51.03CA06(Journal) ========================================================== Created: 2023-01-05 12:03:08 ConfID: 6691826 CauseID: 1557136810 OtherID: 1363323555 JT: Japanese Journal of Applied Physics MD: Yoshitake,50,4s,413,2011,Annealing Effects on Ge/SiO2 Interface Structure in Wafer-Bonded Germanium-on-Insulator Substrates DOI: 10.1143/JJAP.50.04DA13(Journal) (6691826-N) DOI: 10.7567/JJAP.50.04DA13(Journal) ========================================================== Created: 2023-02-01 12:47:02 ConfID: 6716402 CauseID: 1560040637 OtherID: 1363320770 JT: Japanese Journal of Applied Physics MD: Han,51,4s,404,2012,A Novel Cost Effective Double Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor Design for Improving Off-State Breakdown Voltage DOI: 10.1143/JJAP.51.04DP04(Journal) (6716402-N) DOI: 10.7567/JJAP.51.04DP04(Journal) ========================================================== Created: 2023-01-05 12:03:10 ConfID: 6691827 CauseID: 1557136813 OtherID: 1363323545 JT: Japanese Journal of Applied Physics MD: Sahari,50,4s,412,2011,Native Oxidation Growth on Ge(111) and (100) Surfaces DOI: 10.1143/JJAP.50.04DA12(Journal) (6691827-N) DOI: 10.7567/JJAP.50.04DA12(Journal) ========================================================== Created: 2023-02-01 12:47:03 ConfID: 6716403 CauseID: 1560040638 OtherID: 1363320029 JT: Japanese Journal of Applied Physics MD: Kawazu,51,11r,115201,2012,Effects of Sb/As Interdiffusion on Optical Anisotropy of GaSb Quantum Dots in GaAs Grown by Droplet Epitaxy DOI: 10.1143/JJAP.51.115201(Journal) (6716403-N) DOI: 10.7567/JJAP.51.115201(Journal) ========================================================== Created: 2023-01-05 12:03:06 ConfID: 6691824 CauseID: 1557136808 OtherID: 1363323562 JT: Japanese Journal of Applied Physics MD: Sano,50,4s,409,2011,In situ Formation of HfN/HfSiON Gate Stacks with 0.5 nm Equivalent Oxide Thickness Utilizing Electron Cyclotron Resonance Plasma Sputtering on Three-Dimensional Si Structures DOI: 10.1143/JJAP.50.04DA09(Journal) (6691824-N) DOI: 10.7567/JJAP.50.04DA09(Journal) ========================================================== Created: 2023-02-01 12:47:01 ConfID: 6716400 CauseID: 1560040634 OtherID: 1363321312 JT: Japanese Journal of Applied Physics MD: Lee,51,8s2,801,2012,Evaluation of Data Stability and Analysis of Degradation Factors of Digital Versatile Disk Recordable (DVD+R) for Archival Application DOI: 10.1143/JJAP.51.08JC01(Journal) (6716400-N) DOI: 10.7567/JJAP.51.08JC01(Journal) ========================================================== Created: 2023-01-05 12:03:07 ConfID: 6691825 CauseID: 1557136809 OtherID: 1363323518 JT: Japanese Journal of Applied Physics MD: Shibata,50,4r,41503,2011,Improvement of Piezoelectric Properties of (K,Na)NbO3 Films Deposited by Sputtering DOI: 10.1143/JJAP.50.041503(Journal) (6691825-N) DOI: 10.7567/JJAP.50.041503(Journal) ========================================================== Created: 2023-02-01 12:47:01 ConfID: 6716401 CauseID: 1560040635 OtherID: 1363320843 JT: Japanese Journal of Applied Physics MD: Razak,51,5s,504,2012,Current Induced Grain Growth of Electroplated Copper Film DOI: 10.1143/JJAP.51.05EA04(Journal) (6716401-N) DOI: 10.7567/JJAP.51.05EA04(Journal) ========================================================== Created: 2023-01-05 12:06:35 ConfID: 6691838 CauseID: 1557137293 OtherID: 1363323899 JT: Japanese Journal of Applied Physics MD: Deguchi,50,6r,60211,2011,Current–Voltage Characteristics of Discharge with Water–Ceramic Electrode DOI: 10.1143/JJAP.50.060211(Journal) (6691838-N) DOI: 10.7567/JJAP.50.060211(Journal) ========================================================== Created: 2023-02-01 12:47:12 ConfID: 6716414 CauseID: 1560040661 OtherID: 1363320732 JT: Japanese Journal of Applied Physics MD: Makihara,51,4s,408,2012,Electroluminescence from One-Dimensionally Self-Aligned Si-Based Quantum Dots with High Areal Dot Density DOI: 10.1143/JJAP.51.04DG08(Journal) (6716414-N) DOI: 10.7567/JJAP.51.04DG08(Journal) ========================================================== Created: 2023-01-05 12:03:12 ConfID: 6691839 CauseID: 1557136817 OtherID: 1363323560 JT: Japanese Journal of Applied Physics MD: Iwasaki,50,4s,414,2011,Electrical Characterization of Wafer-Bonded Germanium-on-Insulator Substrates Using a Four-Point-Probe Pseudo-Metal–Oxide–Semiconductor Field-Effect Transistor DOI: 10.1143/JJAP.50.04DA14(Journal) (6691839-N) DOI: 10.7567/JJAP.50.04DA14(Journal) ========================================================== Created: 2023-02-01 12:47:13 ConfID: 6716415 CauseID: 1560040662 OtherID: 1363320844 JT: Japanese Journal of Applied Physics MD: Wada,51,5s,501,2012,Super-Low-k SiOCH Film with Sufficient Film Modulus and High Thermal Stability Formed by Using Admixture Precursor in Neutral-Beam-Enhanced Chemical Vapor Deposition DOI: 10.1143/JJAP.51.05EC01(Journal) (6716415-N) DOI: 10.7567/JJAP.51.05EC01(Journal) ========================================================== Created: 2023-01-05 12:06:22 ConfID: 6691836 CauseID: 1557137263 OtherID: 1363323871 JT: Japanese Journal of Applied Physics MD: Zverev,50,5s2,502,2011,Anomalies in Transport and Superconducting Properties of Ba1-xKxFe2As2 Single Crystals DOI: 10.1143/JJAP.50.05FD02(Journal) (6691836-N) DOI: 10.7567/JJAP.50.05FD02(Journal) ========================================================== Created: 2023-02-01 12:47:10 ConfID: 6716412 CauseID: 1560040658 OtherID: 1363321198 JT: Japanese Journal of Applied Physics MD: Matsuzawa,51,7s,726,2012,Monitoring of Lesion Induced by High-Intensity Focused Ultrasound Using Correlation Method Based on Block Matching DOI: 10.1143/JJAP.51.07GF26(Journal) (6716412-N) DOI: 10.7567/JJAP.51.07GF26(Journal) ========================================================== Created: 2023-01-05 12:06:35 ConfID: 6691837 CauseID: 1557137290 OtherID: 1363323890 JT: Japanese Journal of Applied Physics MD: Askerov,50,5s2,510,2011,Entropy of Superlattices in a Quantized Magnetic Field DOI: 10.1143/JJAP.50.05FE10(Journal) (6691837-N) DOI: 10.7567/JJAP.50.05FE10(Journal) ========================================================== Created: 2023-02-01 12:47:11 ConfID: 6716413 CauseID: 1560040659 OtherID: 1363320740 JT: Japanese Journal of Applied Physics MD: Furuya,51,4s,412,2012,Basic Study of Coupling on Three-Dimensional Crossing of Si Photonic Wire Waveguide for Optical Interconnection on Inter or Inner Chip DOI: 10.1143/JJAP.51.04DG12(Journal) (6716413-N) DOI: 10.7567/JJAP.51.04DG12(Journal) ========================================================== Created: 2023-01-05 12:06:21 ConfID: 6691834 CauseID: 1557137262 OtherID: 1363323889 JT: Japanese Journal of Applied Physics MD: Nelayev,50,5s2,508,2011,Multiscale Simulation of Nanostructured Materials and Systems DOI: 10.1143/JJAP.50.05FE08(Journal) (6691834-N) DOI: 10.7567/JJAP.50.05FE08(Journal) ========================================================== Created: 2023-02-01 12:47:13 ConfID: 6716410 CauseID: 1560040654 OtherID: 1363320051 JT: Japanese Journal of Applied Physics MD: Sawai,51,12r,121801,2012,Atomic Scale Imaging of TiO2(100) Reconstructed Surfaces by Noncontact Scanning Nonlinear Dielectric Microscopy DOI: 10.1143/JJAP.51.121801(Journal) (6716410-N) DOI: 10.7567/JJAP.51.121801(Journal) ========================================================== Created: 2023-01-05 12:03:11 ConfID: 6691835 CauseID: 1557136816 OtherID: 1363323548 JT: Japanese Journal of Applied Physics MD: Ikarashi,50,4s,405,2011,Interfacial Atomic Structure Between Pt-Added NiSi and Si(001) DOI: 10.1143/JJAP.50.04DA05(Journal) (6691835-N) DOI: 10.7567/JJAP.50.04DA05(Journal) ========================================================== Created: 2023-02-01 12:47:14 ConfID: 6716411 CauseID: 1560040655 OtherID: 1363320727 JT: Japanese Journal of Applied Physics MD: Hattori,51,4s,403,2012,Femtosecond Laser-Excited Two-Photon Fluorescence Microscopy of Surface Plasmon Polariton DOI: 10.1143/JJAP.51.04DG03(Journal) (6716411-N) DOI: 10.7567/JJAP.51.04DG03(Journal) ========================================================== Created: 2023-01-05 12:03:14 ConfID: 6691832 CauseID: 1557136815 OtherID: 1363323559 JT: Japanese Journal of Applied Physics MD: Kato,50,4s,417,2011,Effect of Pr Valence State on Interfacial Structure and Electrical Properties of Pr Oxide/PrON/Ge Gate Stack Structure DOI: 10.1143/JJAP.50.04DA17(Journal) (6691832-N) DOI: 10.7567/JJAP.50.04DA17(Journal) ========================================================== Created: 2023-02-01 12:47:06 ConfID: 6716408 CauseID: 1560040647 OtherID: 1363320706 JT: Japanese Journal of Applied Physics MD: Banerjee,51,4s,410,2012,Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrOx/AlOx/W Cross-Point DOI: 10.1143/JJAP.51.04DD10(Journal) (6716408-N) DOI: 10.7567/JJAP.51.04DD10(Journal) ========================================================== Created: 2023-01-05 12:06:15 ConfID: 6691833 CauseID: 1557137252 OtherID: 1363323891 JT: Japanese Journal of Applied Physics MD: Aghdami,50,5s2,506,2011,Control of Self-Focusing and Self-Defocusing in the Waveguides Array DOI: 10.1143/JJAP.50.05FG06(Journal) (6691833-N) DOI: 10.7567/JJAP.50.05FG06(Journal) ========================================================== Created: 2023-02-01 12:47:09 ConfID: 6716409 CauseID: 1560040653 OtherID: 1363320033 JT: Japanese Journal of Applied Physics MD: Uchiyama,51,11r,116502,2012,Spray Coating Deposition of Thin Resist Film on Fiber Substrates DOI: 10.1143/JJAP.51.116502(Journal) (6716409-N) DOI: 10.7567/JJAP.51.116502(Journal) ========================================================== Created: 2023-01-05 12:03:36 ConfID: 6691782 CauseID: 1557136869 OtherID: 1363323574 JT: Japanese Journal of Applied Physics MD: Izumida,50,4s,415,2011,Advantage of Plasma Doping for Source/Drain Extension in Bulk Fin Field Effect Transistor DOI: 10.1143/JJAP.50.04DC15(Journal) (6691782-N) DOI: 10.7567/JJAP.50.04DC15(Journal) ========================================================== Created: 2023-02-01 12:46:02 ConfID: 6716358 CauseID: 1560040487 OtherID: 1363320090 JT: Japanese Journal of Applied Physics MD: Chan,51,12r,125502,2012,Oxide Solar Cells Fabricated Using Zinc Oxide and Plasma-Oxidized Cuprous Oxide DOI: 10.1143/JJAP.51.125502(Journal) (6716358-N) DOI: 10.7567/JJAP.51.125502(Journal) ========================================================== Created: 2023-01-05 12:03:45 ConfID: 6691783 CauseID: 1557136881 OtherID: 1363323605 JT: Japanese Journal of Applied Physics MD: Matsumoto,50,4s,406,2011,A 65 nm Complementary Metal–Oxide–Semiconductor 400 ns Measurement Delay Negative-Bias-Temperature-Instability Recovery Sensor with Minimum Assist Circuit DOI: 10.1143/JJAP.50.04DE06(Journal) (6691783-N) DOI: 10.7567/JJAP.50.04DE06(Journal) ========================================================== Created: 2023-02-01 12:46:14 ConfID: 6716359 CauseID: 1560040512 OtherID: 1363319974 JT: Japanese Journal of Applied Physics MD: Park,51,10r,106501,2012,Bidirectional Two-Terminal Switching Device Using Schottky Barrier for Spin-Transfer-Torque Magnetic Random Access Memory DOI: 10.1143/JJAP.51.106501(Journal) (6716359-N) DOI: 10.7567/JJAP.51.106501(Journal) ========================================================== Created: 2023-01-05 12:02:49 ConfID: 6691780 CauseID: 1557136763 OtherID: 1363323515 JT: Japanese Journal of Applied Physics MD: Hwang,50,4r,42701,2011,Composition and Characterization of Femtosecond Optical Lattices Using Double Axicon Holographic Pattern DOI: 10.1143/JJAP.50.042701(Journal) (6691780-N) DOI: 10.7567/JJAP.50.042701(Journal) ========================================================== Created: 2023-02-01 12:46:06 ConfID: 6716356 CauseID: 1560040501 OtherID: 1363319982 JT: Japanese Journal of Applied Physics MD: Moritomo,51,10r,107301,2012,Fast Discharge Process of Thin Film Electrode of Prussian Blue Analogue DOI: 10.1143/JJAP.51.107301(Journal) (6716356-N) DOI: 10.7567/JJAP.51.107301(Journal) ========================================================== Created: 2023-01-05 12:02:50 ConfID: 6691781 CauseID: 1557136764 OtherID: 1363323509 JT: Japanese Journal of Applied Physics MD: Huang,50,4r,42601,2011,Phase-Change Kinetics of Bi–Fe–(N) Layer for High-Speed Write-Once Optical Recording DOI: 10.1143/JJAP.50.042601(Journal) (6691781-N) DOI: 10.7567/JJAP.50.042601(Journal) ========================================================== Created: 2023-02-01 12:46:10 ConfID: 6716357 CauseID: 1560040509 OtherID: 1363320720 JT: Japanese Journal of Applied Physics MD: Kambayashi,51,4s,403,2012,High Integrity SiO2 Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal–Oxide–Semiconductor Heterojunction Field-Effect Transistor on Si Substrate DOI: 10.1143/JJAP.51.04DF03(Journal) (6716357-N) DOI: 10.7567/JJAP.51.04DF03(Journal) ========================================================== Created: 2023-01-05 12:02:48 ConfID: 6691778 CauseID: 1557136761 OtherID: 1363323537 JT: Japanese Journal of Applied Physics MD: Fujimoto,50,4r,45803,2011,Self-Assembled Nano-heterostructural Thin Film for Optical Lens DOI: 10.1143/JJAP.50.045803(Journal) (6691778-N) DOI: 10.7567/JJAP.50.045803(Journal) ========================================================== Created: 2023-02-01 12:46:05 ConfID: 6716354 CauseID: 1560040494 OtherID: 1363320733 JT: Japanese Journal of Applied Physics MD: Taira,51,4s,404,2012,Analysis of Phase Matching Conditions for Generating Second Harmonic in ZnO Channel Waveguides DOI: 10.1143/JJAP.51.04DG04(Journal) (6716354-N) DOI: 10.7567/JJAP.51.04DG04(Journal) ========================================================== Created: 2023-01-05 12:02:49 ConfID: 6691779 CauseID: 1557136762 OtherID: 1363323495 JT: Japanese Journal of Applied Physics MD: Orita,50,4r,41102,2011,Mechanism for Lower Resistivity of Niobium-Doped Anatase Titanium Dioxide Obtained in Oxygen-Reduced Atmosphere: Investigation by Generalized Gradient Approximation +U Method DOI: 10.1143/JJAP.50.041102(Journal) (6691779-N) DOI: 10.7567/JJAP.50.041102(Journal) ========================================================== Created: 2023-02-01 12:46:05 ConfID: 6716355 CauseID: 1560040495 OtherID: 1363320104 JT: Japanese Journal of Applied Physics MD: Tochio,51,12r,126602,2012,Transient Stress Imaging after Irradiation with a Focused Femtosecond Laser Pulse inside a Single Crystal DOI: 10.1143/JJAP.51.126602(Journal) (6716355-N) DOI: 10.7567/JJAP.51.126602(Journal) ========================================================== Created: 2023-01-05 12:02:48 ConfID: 6691776 CauseID: 1557136760 OtherID: 1363323533 JT: Japanese Journal of Applied Physics MD: Padama,50,4r,45701,2011,Density Functional Theory Investigation on the Dissociation and Adsorption Processes of N2 on Pd(111) and Pd3Ag(111) Surfaces DOI: 10.1143/JJAP.50.045701(Journal) (6691776-N) DOI: 10.7567/JJAP.50.045701(Journal) ========================================================== Created: 2023-02-01 12:46:02 ConfID: 6716352 CauseID: 1560040485 OtherID: 1363320002 JT: Japanese Journal of Applied Physics MD: Jeon,51,11r,111502,2012,Dielectric Properties of Layered ZnTa2O6/Poly(tetrafluoroethylene) Composites DOI: 10.1143/JJAP.51.111502(Journal) (6716352-N) DOI: 10.7567/JJAP.51.111502(Journal) ========================================================== Created: 2023-01-05 12:03:25 ConfID: 6691777 CauseID: 1557136841 OtherID: 1363323594 JT: Japanese Journal of Applied Physics MD: Ryu,50,4s,401,2011,Data Retention Characteristics for Gate Oxide Schemes in Sub-50 nm Saddle-Fin Transistor Dynamic-Random-Access-Memory Technology DOI: 10.1143/JJAP.50.04DD01(Journal) (6691777-N) DOI: 10.7567/JJAP.50.04DD01(Journal) ========================================================== Created: 2023-02-01 12:46:03 ConfID: 6716353 CauseID: 1560040488 OtherID: 1363320076 JT: Japanese Journal of Applied Physics MD: Fang,51,12r,123001,2012,Monte Carlo Simulation of Magnetization Recovery in Two-Dimensional Ferromagnetic System after Ultrafast Pump Pulses DOI: 10.1143/JJAP.51.123001(Journal) (6716353-N) DOI: 10.7567/JJAP.51.123001(Journal) ========================================================== Created: 2023-01-05 12:02:55 ConfID: 6691790 CauseID: 1557136776 OtherID: 1363323512 JT: Japanese Journal of Applied Physics MD: Lee,50,4r,41601,2011,Effects of Gold Nanoparticles on Pentacene Organic Field-Effect Transistors DOI: 10.1143/JJAP.50.041601(Journal) (6691790-N) DOI: 10.7567/JJAP.50.041601(Journal) ========================================================== Created: 2023-02-01 12:46:22 ConfID: 6716366 CauseID: 1560040547 OtherID: 1363320032 JT: Japanese Journal of Applied Physics MD: Assafrao,51,11r,112501,2012,Influence of the Numerical Aperture on the Superresolved InSb Focused Spot DOI: 10.1143/JJAP.51.112501(Journal) (6716366-N) DOI: 10.7567/JJAP.51.112501(Journal) ========================================================== Created: 2023-01-05 12:02:56 ConfID: 6691791 CauseID: 1557136777 OtherID: 1363323505 JT: Japanese Journal of Applied Physics MD: Suzuki,50,4r,42201,2011,Proposal of Micro-Trichroic Structures for High-Sensitivity Color Image Sensors DOI: 10.1143/JJAP.50.042201(Journal) (6691791-N) DOI: 10.7567/JJAP.50.042201(Journal) ========================================================== Created: 2023-02-01 12:46:22 ConfID: 6716367 CauseID: 1560040546 OtherID: 1363320680 JT: Japanese Journal of Applied Physics MD: Liu,51,4s,405,2012,Robust Data Retention and Superior Endurance of Silicon–Oxide–Nitride–Oxide–Silicon-Type Nonvolatile Memory with NH3-Plasma-Treated and Pd-Nanocrystal-Embedded Charge Storage Layer DOI: 10.1143/JJAP.51.04DD05(Journal) (6716367-N) DOI: 10.7567/JJAP.51.04DD05(Journal) ========================================================== Created: 2023-01-05 12:03:46 ConfID: 6691788 CauseID: 1557136882 OtherID: 1363323607 JT: Japanese Journal of Applied Physics MD: Yoshida,50,4s,407,2011,A High-Linearity Low-Noise Amplifier with Variable Bandwidth for Neural Recoding Systems DOI: 10.1143/JJAP.50.04DE07(Journal) (6691788-N) DOI: 10.7567/JJAP.50.04DE07(Journal) ========================================================== Created: 2023-02-01 12:46:16 ConfID: 6716364 CauseID: 1560040529 OtherID: 1363320761 JT: Japanese Journal of Applied Physics MD: Tanaka,51,4s,402,2012,Sub-micro-liter Electrochemical Single-Nucleotide-Polymorphism Detector for Lab-on-a-Chip System DOI: 10.1143/JJAP.51.04DL02(Journal) (6716364-N) DOI: 10.7567/JJAP.51.04DL02(Journal) ========================================================== Created: 2023-01-05 12:02:55 ConfID: 6691789 CauseID: 1557136775 OtherID: 1363323538 JT: Japanese Journal of Applied Physics MD: Kang,50,4r,45807,2011,Microstructure Affecting Magnetoresistance of a Cu75–Fe5–Ni20 Alloy DOI: 10.1143/JJAP.50.045807(Journal) (6691789-N) DOI: 10.7567/JJAP.50.045807(Journal) ========================================================== Created: 2023-02-01 12:46:21 ConfID: 6716365 CauseID: 1560040538 OtherID: 1363320678 JT: Japanese Journal of Applied Physics MD: Sato,51,4s,401,2012,Fabrication of Graphene Directly on SiO2 without Transfer Processes by Annealing Sputtered Amorphous Carbon DOI: 10.1143/JJAP.51.04DB01(Journal) (6716365-N) DOI: 10.7567/JJAP.51.04DB01(Journal) ========================================================== Created: 2023-01-05 12:02:53 ConfID: 6691786 CauseID: 1557136769 OtherID: 1363323510 JT: Japanese Journal of Applied Physics MD: Oishi,50,4r,42702,2011,Evaluation of Yields of γ-Rays Produced by Electrons from Gas Jets Irradiated by Low-Energy Laser Pulses: Towards “Virtual Radioisotopes” DOI: 10.1143/JJAP.50.042702(Journal) (6691786-N) DOI: 10.7567/JJAP.50.042702(Journal) ========================================================== Created: 2023-02-01 12:46:19 ConfID: 6716362 CauseID: 1560040528 OtherID: 1363320736 JT: Japanese Journal of Applied Physics MD: Ueyama,51,4s,406,2012,GaAs/AlAs Multilayer Cavity with Er-Doped InAs Quantum Dots Embedded in Strain-Relaxed InGaAs Barriers for Ultrafast All-Optical Switches DOI: 10.1143/JJAP.51.04DG06(Journal) (6716362-N) DOI: 10.7567/JJAP.51.04DG06(Journal) ========================================================== Created: 2023-01-05 12:02:53 ConfID: 6691787 CauseID: 1557136770 OtherID: 1363323506 JT: Japanese Journal of Applied Physics MD: Kawakami,50,4r,41303,2011,Effect of Introducing β-FeSi2 Template Layers on Defect Density and Minority Carrier Diffusion Length in Si Region near p-β-FeSi2/n-Si Heterointerface DOI: 10.1143/JJAP.50.041303(Journal) (6691787-N) DOI: 10.7567/JJAP.50.041303(Journal) ========================================================== Created: 2023-02-01 12:46:16 ConfID: 6716363 CauseID: 1560040530 OtherID: 1363321351 JT: Japanese Journal of Applied Physics MD: Wang,51,8s3,811,2012,Evaluation of Errors in the Measurement of Surface Roughness at High Spatial Frequency by Atomic Force Microscopy on a Thin Film DOI: 10.1143/JJAP.51.08KB11(Journal) (6716363-N) DOI: 10.7567/JJAP.51.08KB11(Journal) ========================================================== Created: 2023-01-05 12:02:51 ConfID: 6691784 CauseID: 1557136766 OtherID: 1363323513 JT: Japanese Journal of Applied Physics MD: Song,50,4r,45102,2011,Anchoring Au and Pt Nanoparticles on Multiwalled Carbon Nanotubes via Electron Beam Induced Amorphous Carbon Encapsulation DOI: 10.1143/JJAP.50.045102(Journal) (6691784-N) DOI: 10.7567/JJAP.50.045102(Journal) ========================================================== Created: 2023-02-01 12:46:17 ConfID: 6716360 CauseID: 1560040523 OtherID: 1363321019 JT: Japanese Journal of Applied Physics MD: Horiuchi,51,6s,601,2012,New Laser-Scan Exposure System for Delineating Precise Helical Patterns onto Sub-50-µm Wires DOI: 10.1143/JJAP.51.06FL01(Journal) (6716360-N) DOI: 10.7567/JJAP.51.06FL01(Journal) ========================================================== Created: 2023-01-05 12:02:52 ConfID: 6691785 CauseID: 1557136767 OtherID: 1363323530 JT: Japanese Journal of Applied Physics MD: Chantana,50,4r,45806,2011,Importance of Starting Procedure for Film Growth in Substrate-Type Microcrystalline-Silicon Solar Cells DOI: 10.1143/JJAP.50.045806(Journal) (6691785-N) DOI: 10.7567/JJAP.50.045806(Journal) ========================================================== Created: 2023-02-01 12:46:19 ConfID: 6716361 CauseID: 1560040527 OtherID: 1363321362 JT: Japanese Journal of Applied Physics MD: Liao,51,8s3,813,2012,Spring Constant Calibration of Microcantilever by Astigmatic Detection System DOI: 10.1143/JJAP.51.08KB13(Journal) (6716361-N) DOI: 10.7567/JJAP.51.08KB13(Journal) ========================================================== Created: 2023-01-05 12:04:55 ConfID: 6691798 CauseID: 1557137054 OtherID: 1363323744 JT: Japanese Journal of Applied Physics MD: Sakurada,50,4s,413,2011,Simulation of Temperature Characteristics of InGaP/InGaAs/Ge Triple-Junction Solar Cell under Concentrated Light DOI: 10.1143/JJAP.50.04DP13(Journal) (6691798-N) DOI: 10.7567/JJAP.50.04DP13(Journal) ========================================================== Created: 2023-02-01 12:46:33 ConfID: 6716374 CauseID: 1560040565 OtherID: 1363321316 JT: Japanese Journal of Applied Physics MD: Kikukawa,51,8s2,801,2012,Read Data Transfer Rate Estimation in Optical Phase Multilevel Recording DOI: 10.1143/JJAP.51.08JB01(Journal) (6716374-N) DOI: 10.7567/JJAP.51.08JB01(Journal) ========================================================== Created: 2023-01-05 12:02:59 ConfID: 6691799 CauseID: 1557136782 OtherID: 1363323536 JT: Japanese Journal of Applied Physics MD: Kim,50,4r,45805,2011,Crystallization Properties of Ge1-xSbx Thin Films (x = 0.58–0.88) DOI: 10.1143/JJAP.50.045805(Journal) (6691799-N) DOI: 10.7567/JJAP.50.045805(Journal) ========================================================== Created: 2023-02-01 12:46:34 ConfID: 6716375 CauseID: 1560040567 OtherID: 1363320690 JT: Japanese Journal of Applied Physics MD: Shuto,51,4s,404,2012,Room-Temperature Microjoining of LSI Chips on Poly(ethylene naphthalate) Film Using Mechanical Caulking of Au Cone Bump DOI: 10.1143/JJAP.51.04DB04(Journal) (6716375-N) DOI: 10.7567/JJAP.51.04DB04(Journal) ========================================================== Created: 2023-01-05 12:04:45 ConfID: 6691796 CauseID: 1557137028 OtherID: 1363323749 JT: Japanese Journal of Applied Physics MD: Kim,50,5r,50206,2011,Highly Scalable Vertical Channel Phase Change Random Access Memory DOI: 10.1143/JJAP.50.050206(Journal) (6691796-N) DOI: 10.7567/JJAP.50.050206(Journal) ========================================================== Created: 2023-02-01 12:46:30 ConfID: 6716372 CauseID: 1560040563 OtherID: 1363320841 JT: Japanese Journal of Applied Physics MD: Saito,51,5s,503,2012,Adsorption Kinetic Study of Poly(ethylene glycol) during Copper Electrodeposition by a Microfluidic Device DOI: 10.1143/JJAP.51.05EA03(Journal) (6716372-N) DOI: 10.7567/JJAP.51.05EA03(Journal) ========================================================== Created: 2023-01-05 12:02:58 ConfID: 6691797 CauseID: 1557136781 OtherID: 1363323541 JT: Japanese Journal of Applied Physics MD: Nishino,50,4r,46601,2011,Experimental Investigation of Mode Conversions of the T(0,1) Mode Guided Wave Propagating in an Elbow Pipe DOI: 10.1143/JJAP.50.046601(Journal) (6691797-N) DOI: 10.7567/JJAP.50.046601(Journal) ========================================================== Created: 2023-02-01 12:46:33 ConfID: 6716373 CauseID: 1560040564 OtherID: 1363320746 JT: Japanese Journal of Applied Physics MD: Liao,51,4s,401,2012,Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors DOI: 10.1143/JJAP.51.04DK01(Journal) (6716373-N) DOI: 10.7567/JJAP.51.04DK01(Journal) ========================================================== Created: 2023-01-05 12:02:58 ConfID: 6691794 CauseID: 1557136780 OtherID: 1363323519 JT: Japanese Journal of Applied Physics MD: Ohba,50,4r,41302,2011,Double Junction Tunnel Using Si Nanocrystalline Layer for Nonvolatile Memory Devices DOI: 10.1143/JJAP.50.041302(Journal) (6691794-N) DOI: 10.7567/JJAP.50.041302(Journal) ========================================================== Created: 2023-02-01 12:46:28 ConfID: 6716370 CauseID: 1560040552 OtherID: 1363321030 JT: Japanese Journal of Applied Physics MD: Kim,51,6s,615,2012,Simple Atmospheric-Pressure Nonthermal Plasma-Jet System for Poly(dimethylsiloxane) Bonding Process DOI: 10.1143/JJAP.51.06FL15(Journal) (6716370-N) DOI: 10.7567/JJAP.51.06FL15(Journal) ========================================================== Created: 2023-01-05 12:03:48 ConfID: 6691795 CauseID: 1557136885 OtherID: 1363323617 JT: Japanese Journal of Applied Physics MD: Osaki,50,4s,408,2011,Temperature-Compensated Nano-Ampere Current Reference Circuit with Subthreshold Metal–Oxide–Semiconductor Field-Effect Transistor Resistor Ladder DOI: 10.1143/JJAP.50.04DE08(Journal) (6691795-N) DOI: 10.7567/JJAP.50.04DE08(Journal) ========================================================== Created: 2023-02-01 12:46:27 ConfID: 6716371 CauseID: 1560040560 OtherID: 1363321215 JT: Japanese Journal of Applied Physics MD: Sato,51,7s,712,2012,Design and Numerical Evaluation of Off-Axis Aplanatic Straubel Mirror for Underwater Acoustic Imaging DOI: 10.1143/JJAP.51.07GG12(Journal) (6716371-N) DOI: 10.7567/JJAP.51.07GG12(Journal) ========================================================== Created: 2023-01-05 12:02:57 ConfID: 6691792 CauseID: 1557136778 OtherID: 1363323532 JT: Japanese Journal of Applied Physics MD: Kim,50,4r,45801,2011,Electronic and Optical Properties of Indium Zinc Oxide Thin Films Prepared by Using Nanopowder Target DOI: 10.1143/JJAP.50.045801(Journal) (6691792-N) DOI: 10.7567/JJAP.50.045801(Journal) ========================================================== Created: 2023-02-01 12:46:18 ConfID: 6716368 CauseID: 1560040524 OtherID: 1363320109 JT: Japanese Journal of Applied Physics MD: Ohkochi,51,12r,128001,2012,Progress in Time-Resolved Photoemission Electron Microscopy at BL25SU, SPring-8: Radiofrequency Field Excitation of Magnetic Vortex Core Gyration DOI: 10.1143/JJAP.51.128001(Journal) (6716368-N) DOI: 10.7567/JJAP.51.128001(Journal) ========================================================== Created: 2023-01-05 12:02:57 ConfID: 6691793 CauseID: 1557136779 OtherID: 1363323485 JT: Japanese Journal of Applied Physics MD: Toyoda,50,4r,41101,2011,High-Temperature Thermoelectric Property of Layered La2-2xCa1+2xMn2O7 Manganites (0.75 ≤x ≤1.0) DOI: 10.1143/JJAP.50.041101(Journal) (6691793-N) DOI: 10.7567/JJAP.50.041101(Journal) ========================================================== Created: 2023-02-01 12:46:24 ConfID: 6716369 CauseID: 1560040549 OtherID: 1363321290 JT: Japanese Journal of Applied Physics MD: Hayashi,51,8s1,806,2012,Superstructures Based upon n- and p-Type Organic Semiconductors: Toward Light-Emitting Device Applications DOI: 10.1143/JJAP.51.08HF06(Journal) (6716369-N) DOI: 10.7567/JJAP.51.08HF06(Journal) ========================================================== Created: 2023-01-05 12:05:35 ConfID: 6691806 CauseID: 1557137177 OtherID: 1363323779 JT: Japanese Journal of Applied Physics MD: Lee,50,5r,58001,2011,Implications of the Differential Equations of the X-ray Free-Electron Laser DOI: 10.1143/JJAP.50.058001(Journal) (6691806-N) DOI: 10.7567/JJAP.50.058001(Journal) ========================================================== Created: 2023-02-01 12:46:35 ConfID: 6716382 CauseID: 1560040579 OtherID: 1363320036 JT: Japanese Journal of Applied Physics MD: An,51,11r,116601,2012,Piezoresistive Silicon Microresonator for Measurements of Hydrogen Adsorption in Carbon Nanotubes DOI: 10.1143/JJAP.51.116601(Journal) (6716382-N) DOI: 10.7567/JJAP.51.116601(Journal) ========================================================== Created: 2023-01-05 12:03:02 ConfID: 6691807 CauseID: 1557136790 OtherID: 1363323549 JT: Japanese Journal of Applied Physics MD: Bolotov,50,4s,404,2011,Measurements of Electrostatic Potential Across p–n Junctions on Oxidized Si Surfaces by Scanning Multimode Tunneling Spectroscopy DOI: 10.1143/JJAP.50.04DA04(Journal) (6691807-N) DOI: 10.7567/JJAP.50.04DA04(Journal) ========================================================== Created: 2023-02-01 12:46:31 ConfID: 6716383 CauseID: 1560040569 OtherID: 1363320714 JT: Japanese Journal of Applied Physics MD: Prakash,51,4s,406,2012,Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure DOI: 10.1143/JJAP.51.04DD06(Journal) (6716383-N) DOI: 10.7567/JJAP.51.04DD06(Journal) ========================================================== Created: 2023-01-05 12:03:00 ConfID: 6691804 CauseID: 1557136788 OtherID: 1363323523 JT: Japanese Journal of Applied Physics MD: Kim,50,4r,46504,2011,Improved Resistive Switching Properties of Solution-Processed TiOx Film by Incorporating Atomic Layer Deposited TiO2 layer DOI: 10.1143/JJAP.50.046504(Journal) (6691804-N) DOI: 10.7567/JJAP.50.046504(Journal) ========================================================== Created: 2023-02-01 12:46:38 ConfID: 6716380 CauseID: 1560040576 OtherID: 1363320703 JT: Japanese Journal of Applied Physics MD: Matsumoto,51,4s,402,2012,Multicore Large-Scale Integration Lifetime Extension by Negative Bias Temperature Instability Recovery-Based Self-Healing DOI: 10.1143/JJAP.51.04DE02(Journal) (6716380-N) DOI: 10.7567/JJAP.51.04DE02(Journal) ========================================================== Created: 2023-01-05 12:03:01 ConfID: 6691805 CauseID: 1557136789 OtherID: 1363323527 JT: Japanese Journal of Applied Physics MD: Lin,50,4r,48002,2011,Nonconfocal Differential Interferometry Sensing Scheme for Scanning Probe Microscopy DOI: 10.1143/JJAP.50.048002(Journal) (6691805-N) DOI: 10.7567/JJAP.50.048002(Journal) ========================================================== Created: 2023-02-01 12:46:39 ConfID: 6716381 CauseID: 1560040578 OtherID: 1363321293 JT: Japanese Journal of Applied Physics MD: Maeda,51,8s1,801,2012,Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing DOI: 10.1143/JJAP.51.08HD01(Journal) (6716381-N) DOI: 10.7567/JJAP.51.08HD01(Journal) ========================================================== Created: 2023-01-05 12:03:00 ConfID: 6691802 CauseID: 1557136787 OtherID: 1363323525 JT: Japanese Journal of Applied Physics MD: Nitta,50,4r,46501,2011,Research on Reaction Method of High Removal Rate Chemical Mechanical Polishing Slurry for 4H-SiC Substrate DOI: 10.1143/JJAP.50.046501(Journal) (6691802-N) DOI: 10.7567/JJAP.50.046501(Journal) ========================================================== Created: 2023-02-01 12:46:32 ConfID: 6716378 CauseID: 1560040572 OtherID: 1363319984 JT: Japanese Journal of Applied Physics MD: Kozawa,51,10r,108002,2012,Dependence of Dissolution Point on Pattern Size of Chemically Amplified Extreme Ultraviolet Resist DOI: 10.1143/JJAP.51.108002(Journal) (6716378-N) DOI: 10.7567/JJAP.51.108002(Journal) ========================================================== Created: 2023-01-05 12:05:34 ConfID: 6691803 CauseID: 1557137167 OtherID: 1363323707 JT: Japanese Journal of Applied Physics MD: Takamura,50,4s,410,2011,Planar Microfluidic System Based on Electrophoresis for Detection of 130-nm Magnetic Labels for Biosensing DOI: 10.1143/JJAP.50.04DL10(Journal) (6691803-N) DOI: 10.7567/JJAP.50.04DL10(Journal) ========================================================== Created: 2023-02-01 12:46:35 ConfID: 6716379 CauseID: 1560040575 OtherID: 1363321285 JT: Japanese Journal of Applied Physics MD: Johnson,51,8s1,801,2012,Tailored Voltage Waveform Deposition of Microcrystalline Silicon Thin Films from Hydrogen-Diluted Silane and Silicon Tetrafluoride: Optoelectronic Properties of Films DOI: 10.1143/JJAP.51.08HF01(Journal) (6716379-N) DOI: 10.7567/JJAP.51.08HF01(Journal) ========================================================== Created: 2023-01-05 12:05:04 ConfID: 6691800 CauseID: 1557137073 OtherID: 1363323821 JT: Japanese Journal of Applied Physics MD: Kitada,50,5s1,502,2011,Diffusion Resistance of Low Temperature Chemical Vapor Deposition Dielectrics for Multiple Through Silicon Vias on Bumpless Wafer-on-Wafer Technology DOI: 10.1143/JJAP.50.05ED02(Journal) (6691800-N) DOI: 10.7567/JJAP.50.05ED02(Journal) ========================================================== Created: 2023-02-01 12:46:30 ConfID: 6716376 CauseID: 1560040568 OtherID: 1363321338 JT: Japanese Journal of Applied Physics MD: Hara,51,8s3,801,2012,Study of GaSb Layers Grown on Ga/Si(111)-√3×√3 by Scanning Tunneling Microscopy DOI: 10.1143/JJAP.51.08KB01(Journal) (6716376-N) DOI: 10.7567/JJAP.51.08KB01(Journal) ========================================================== Created: 2023-01-05 12:05:23 ConfID: 6691801 CauseID: 1557137147 OtherID: 1363323818 JT: Japanese Journal of Applied Physics MD: Khajornrungruang,50,5s1,503,2011,Slurry Supplying Method for Large Quartz Glass Substrate Polishing DOI: 10.1143/JJAP.50.05EC03(Journal) (6691801-N) DOI: 10.7567/JJAP.50.05EC03(Journal) ========================================================== Created: 2023-02-01 12:46:32 ConfID: 6716377 CauseID: 1560040571 OtherID: 1363321007 JT: Japanese Journal of Applied Physics MD: Terazono,51,6s,608,2012,Cell-Sorting System with On-Chip Imaging for Label-Free Shape-Based Selection of Cells DOI: 10.1143/JJAP.51.06FK08(Journal) (6716377-N) DOI: 10.7567/JJAP.51.06FK08(Journal) ========================================================== Created: 2023-02-01 12:45:34 ConfID: 6716326 CauseID: 1560040396 OtherID: 1363320084 JT: Japanese Journal of Applied Physics MD: Komatsu,51,12r,122405,2012,Feasibility Study on Terahertz Imaging of Corrosion on a Cable Metal Shield DOI: 10.1143/JJAP.51.122405(Journal) (6716326-N) DOI: 10.7567/JJAP.51.122405(Journal) ========================================================== Created: 2023-02-01 12:45:38 ConfID: 6716327 CauseID: 1560040409 OtherID: 1363320577 JT: Japanese Journal of Applied Physics MD: Nishida,51,3s,301,2012,Crystallization Using Biomineralized Nickel Nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation DOI: 10.1143/JJAP.51.03CA01(Journal) (6716327-N) DOI: 10.7567/JJAP.51.03CA01(Journal) ========================================================== Created: 2023-02-01 12:45:32 ConfID: 6716324 CauseID: 1560040391 OtherID: 1363321017 JT: Japanese Journal of Applied Physics MD: Tawa,51,6s,609,2012,Photochemically Induced Crystallization of Proteins Accelerated on Two-Dimensional Gold Gratings DOI: 10.1143/JJAP.51.06FK09(Journal) (6716324-N) DOI: 10.7567/JJAP.51.06FK09(Journal) ========================================================== Created: 2023-02-01 12:45:34 ConfID: 6716325 CauseID: 1560040395 OtherID: 1363319950 JT: Japanese Journal of Applied Physics MD: Heo,51,10r,101203,2012,A Study of Sputtered TiN Gate Electrode Etching with Various Wet Chemicals and Post Etch Annealing for Complementary Metal–Oxide–Semiconductor Device Integration Applications DOI: 10.1143/JJAP.51.101203(Journal) (6716325-N) DOI: 10.7567/JJAP.51.101203(Journal) ========================================================== Created: 2023-02-01 12:45:30 ConfID: 6716322 CauseID: 1560040387 OtherID: 1363321176 JT: Japanese Journal of Applied Physics MD: Akiyama,51,7s,702,2012,Development of Multiple-Frequency Ultrasonic Imaging System Using Multiple Resonance Piezoelectric Transducer DOI: 10.1143/JJAP.51.07GF02(Journal) (6716322-N) DOI: 10.7567/JJAP.51.07GF02(Journal) ========================================================== Created: 2023-02-01 12:45:31 ConfID: 6716323 CauseID: 1560040390 OtherID: 1363320085 JT: Japanese Journal of Applied Physics MD: Gao,51,12r,122702,2012,100-Nanosecond-Level Square-Pulse Generation in a Ring Cavity with a Tellurite Single-Mode Fiber DOI: 10.1143/JJAP.51.122702(Journal) (6716323-N) DOI: 10.7567/JJAP.51.122702(Journal) ========================================================== Created: 2023-02-01 12:45:27 ConfID: 6716320 CauseID: 1560040378 OtherID: 1363321326 JT: Japanese Journal of Applied Physics MD: Koide,51,8s2,804,2012,High-Speed and Precise Gap Servo System for Near-Field Optical Recording DOI: 10.1143/JJAP.51.08JA04(Journal) (6716320-N) DOI: 10.7567/JJAP.51.08JA04(Journal) ========================================================== Created: 2023-02-01 12:45:28 ConfID: 6716321 CauseID: 1560040379 OtherID: 1363319970 JT: Japanese Journal of Applied Physics MD: Lee,51,10r,104203,2012,Variation of Surface Roughness on Ge Substrate by Cleaning in Deionized Water and its Influence on Electrical Properties in Ge Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.51.104203(Journal) (6716321-N) DOI: 10.7567/JJAP.51.104203(Journal) ========================================================== Created: 2023-02-01 12:45:49 ConfID: 6716334 CauseID: 1560040438 OtherID: 1363320998 JT: Japanese Journal of Applied Physics MD: Vy,51,6s,602,2012,Theoretical Study of Mechanical Control of Micro- and Nano-Mechanical Systems by Cavity-Induced Radiation Force DOI: 10.1143/JJAP.51.06FH02(Journal) (6716334-N) DOI: 10.7567/JJAP.51.06FH02(Journal) ========================================================== Created: 2023-02-01 12:45:44 ConfID: 6716335 CauseID: 1560040421 OtherID: 1363319947 JT: Japanese Journal of Applied Physics MD: Sakaguchi,51,10r,101801,2012,Oxygen Diffusion Phenomena and Hydrogen Incorporation in Reducing BaTiO3 Ceramics Doped with Ho below Solubility Limit DOI: 10.1143/JJAP.51.101801(Journal) (6716335-N) DOI: 10.7567/JJAP.51.101801(Journal) ========================================================== Created: 2023-02-01 12:45:41 ConfID: 6716332 CauseID: 1560040424 OtherID: 1363320094 JT: Japanese Journal of Applied Physics MD: Kamata,51,12r,125602,2012,The Structure and Bonding State for Fullerene-Like Carbon Nitride Films with High Hardness Formed by Electron Cyclotron Resonance Plasma Sputtering DOI: 10.1143/JJAP.51.125602(Journal) (6716332-N) DOI: 10.7567/JJAP.51.125602(Journal) ========================================================== Created: 2023-02-01 12:45:45 ConfID: 6716333 CauseID: 1560040436 OtherID: 1363321000 JT: Japanese Journal of Applied Physics MD: Choi,51,6s,602,2012,Imprinted Pattern Profile-Dependent Optical Properties of Metal Nanostructures DOI: 10.1143/JJAP.51.06FJ02(Journal) (6716333-N) DOI: 10.7567/JJAP.51.06FJ02(Journal) ========================================================== Created: 2023-02-01 12:45:33 ConfID: 6716330 CauseID: 1560040394 OtherID: 1363320065 JT: Japanese Journal of Applied Physics MD: Lozac'h,51,12r,121001,2012,Study of Defect Levels in the Band Gap for a Thick InGaN Film DOI: 10.1143/JJAP.51.121001(Journal) (6716330-N) DOI: 10.7567/JJAP.51.121001(Journal) ========================================================== Created: 2023-02-01 12:45:40 ConfID: 6716331 CauseID: 1560040423 OtherID: 1363321171 JT: Japanese Journal of Applied Physics MD: Kamagata,51,7s,703,2012,Investigation of Thermal Conductivity and Heat Characteristics of Oil Sands Using Ultrasound Irradiation for Shortening the Preheating Time DOI: 10.1143/JJAP.51.07GE03(Journal) (6716331-N) DOI: 10.7567/JJAP.51.07GE03(Journal) ========================================================== Created: 2023-02-01 12:45:43 ConfID: 6716328 CauseID: 1560040419 OtherID: 1363320101 JT: Japanese Journal of Applied Physics MD: Yamamoto,51,12r,125601,2012,First-Principles Estimation of Seebeck Coefficient of Bismuth Telluride and Selenide DOI: 10.1143/JJAP.51.125601(Journal) (6716328-N) DOI: 10.7567/JJAP.51.125601(Journal) ========================================================== Created: 2023-02-01 12:45:40 ConfID: 6716329 CauseID: 1560040422 OtherID: 1363321151 JT: Japanese Journal of Applied Physics MD: Tran,51,7s,706,2012,Influence of Transducer Structure on Mechanical and Chemical Effects of 20 kHz Sonication DOI: 10.1143/JJAP.51.07GD06(Journal) (6716329-N) DOI: 10.7567/JJAP.51.07GD06(Journal) ========================================================== Created: 2023-01-05 12:02:43 ConfID: 6691766 CauseID: 1557136748 OtherID: 1363323521 JT: Japanese Journal of Applied Physics MD: Lee,50,4r,41501,2011,Leakage Current Reduction Mechanism of Oxide–Nitride–Oxide Inter-Poly Dielectrics through the Post Plasma Oxidation Treatment DOI: 10.1143/JJAP.50.041501(Journal) (6691766-N) DOI: 10.7567/JJAP.50.041501(Journal) ========================================================== Created: 2023-02-01 12:45:56 ConfID: 6716342 CauseID: 1560040470 OtherID: 1363319934 JT: Japanese Journal of Applied Physics MD: Das,51,10r,102702,2012,Tunable Middle Infrared Radiation with CdGeAs2 Crystal DOI: 10.1143/JJAP.51.102702(Journal) (6716342-N) DOI: 10.7567/JJAP.51.102702(Journal) ========================================================== Created: 2023-01-05 12:02:44 ConfID: 6691767 CauseID: 1557136749 OtherID: 1363323516 JT: Japanese Journal of Applied Physics MD: Murasawa,50,4r,42101,2011,Injection-Current-Induced Blue-Shift Laser Diode: Concept of Excess Carrier Conservation DOI: 10.1143/JJAP.50.042101(Journal) (6691767-N) DOI: 10.7567/JJAP.50.042101(Journal) ========================================================== Created: 2023-02-01 12:45:56 ConfID: 6716343 CauseID: 1560040471 OtherID: 1363321182 JT: Japanese Journal of Applied Physics MD: Matsumoto,51,7s,705,2012,Enhanced Removal of Hydrophobic Gas by Aerial Ultrasonic Waves and Two Kinds of Water Mists of Different Particle Sizes DOI: 10.1143/JJAP.51.07GE05(Journal) (6716343-N) DOI: 10.7567/JJAP.51.07GE05(Journal) ========================================================== Created: 2023-01-05 12:02:50 ConfID: 6691764 CauseID: 1557136765 OtherID: 1363323517 JT: Japanese Journal of Applied Physics MD: Kobayashi,50,4r,42602,2011,A High-Retardation Polymer Film for Viewing Liquid Crystal Displays through Polarized Sunglasses without Chromaticity Change in the Image DOI: 10.1143/JJAP.50.042602(Journal) (6691764-N) DOI: 10.7567/JJAP.50.042602(Journal) ========================================================== Created: 2023-02-01 12:45:52 ConfID: 6716340 CauseID: 1560040456 OtherID: 1363320991 JT: Japanese Journal of Applied Physics MD: Lee,51,6s,615,2012,Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence DOI: 10.1143/JJAP.51.06FG15(Journal) (6716340-N) DOI: 10.7567/JJAP.51.06FG15(Journal) ========================================================== Created: 2023-01-05 12:03:02 ConfID: 6691765 CauseID: 1557136791 OtherID: 1363323531 JT: Japanese Journal of Applied Physics MD: Yodokawa,50,4r,48001,2011,Nonreciprocal Propagation Characteristics of 2.5 THz Submillimeter Wave in Two-Layer Parallel-Plate Waveguide Containing n-InSb Slab at Room Temperature DOI: 10.1143/JJAP.50.048001(Journal) (6691765-N) DOI: 10.7567/JJAP.50.048001(Journal) ========================================================== Created: 2023-02-01 12:45:55 ConfID: 6716341 CauseID: 1560040464 OtherID: 1363320739 JT: Japanese Journal of Applied Physics MD: Katoh,51,4s,405,2012,Terahertz Radiation from a (113)B GaAs/AlAs Coupled Multilayer Cavity Generated by Ultrashort Laser Pulse Excitation DOI: 10.1143/JJAP.51.04DG05(Journal) (6716341-N) DOI: 10.7567/JJAP.51.04DG05(Journal) ========================================================== Created: 2023-01-05 12:02:42 ConfID: 6691762 CauseID: 1557136746 OtherID: 1363323489 JT: Japanese Journal of Applied Physics MD: Ueda,50,4r,41001,2011,Separation of Thin GaN from Sapphire by Laser Lift-Off Technique DOI: 10.1143/JJAP.50.041001(Journal) (6691762-N) DOI: 10.7567/JJAP.50.041001(Journal) ========================================================== Created: 2023-02-01 12:45:50 ConfID: 6716338 CauseID: 1560040449 OtherID: 1363319990 JT: Japanese Journal of Applied Physics MD: Fan,51,10r,106502,2012,Performance Improvement of Low-Temperature Polycrystalline Silicon Thin-Film Transistors with Fluorinated Silicate Glass Drive-In Masking Layer DOI: 10.1143/JJAP.51.106502(Journal) (6716338-N) DOI: 10.7567/JJAP.51.106502(Journal) ========================================================== Created: 2023-01-05 12:02:42 ConfID: 6691763 CauseID: 1557136747 OtherID: 1363323507 JT: Japanese Journal of Applied Physics MD: Takiguchi,50,4r,41301,2011,Nano Structural and Thermoelectric Properties of SiGeAu Thin Films DOI: 10.1143/JJAP.50.041301(Journal) (6691763-N) DOI: 10.7567/JJAP.50.041301(Journal) ========================================================== Created: 2023-02-01 12:45:51 ConfID: 6716339 CauseID: 1560040455 OtherID: 1363319959 JT: Japanese Journal of Applied Physics MD: Inamdar,51,10r,104102,2012,Memory Conductance Switching in a Ni–Ti–O Compound Thin Film DOI: 10.1143/JJAP.51.104102(Journal) (6716339-N) DOI: 10.7567/JJAP.51.104102(Journal) ========================================================== Created: 2023-01-05 12:02:41 ConfID: 6691760 CauseID: 1557136744 OtherID: 1363323491 JT: Japanese Journal of Applied Physics MD: Wong,50,4r,40208,2011,Impact of Implantation and Annealing on Channel Strain of Transistors with Embedded Silicon–Germanium Source and Drain DOI: 10.1143/JJAP.50.040208(Journal) (6691760-N) DOI: 10.7567/JJAP.50.040208(Journal) ========================================================== Created: 2023-02-01 12:45:47 ConfID: 6716336 CauseID: 1560040443 OtherID: 1363320989 JT: Japanese Journal of Applied Physics MD: Choi,51,6s,605,2012,Differential-Mode Biosensor Using Dual Extended-Gate Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.51.06FG05(Journal) (6716336-N) DOI: 10.7567/JJAP.51.06FG05(Journal) ========================================================== Created: 2023-01-05 12:02:41 ConfID: 6691761 CauseID: 1557136745 OtherID: 1363323496 JT: Japanese Journal of Applied Physics MD: Yoshino,50,4r,40207,2011,Low-Temperature Growth of ZnO Films by Spray Pyrolysis DOI: 10.1143/JJAP.50.040207(Journal) (6691761-N) DOI: 10.7567/JJAP.50.040207(Journal) ========================================================== Created: 2023-02-01 12:45:48 ConfID: 6716337 CauseID: 1560040444 OtherID: 1363320669 JT: Japanese Journal of Applied Physics MD: Zhao,51,4s,403,2012,Experimental and Analytical Characterization of Dual-Gated Germanium Junctionless p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.51.04DA03(Journal) (6716337-N) DOI: 10.7567/JJAP.51.04DA03(Journal) ========================================================== Created: 2023-01-05 12:03:22 ConfID: 6691774 CauseID: 1557136837 OtherID: 1363323534 JT: Japanese Journal of Applied Physics MD: Wakamatsu,50,4r,48003,2011,Transparent Cell for Protein Crystallization under Low Applied Voltage DOI: 10.1143/JJAP.50.048003(Journal) (6691774-N) DOI: 10.7567/JJAP.50.048003(Journal) ========================================================== Created: 2023-02-01 12:46:01 ConfID: 6716350 CauseID: 1560040483 OtherID: 1363319972 JT: Japanese Journal of Applied Physics MD: Nica,51,10r,106102,2012,Characterization of Aluminum Laser Produced Plasma by Target Current Measurements DOI: 10.1143/JJAP.51.106102(Journal) (6716350-N) DOI: 10.7567/JJAP.51.106102(Journal) ========================================================== Created: 2023-01-05 12:02:47 ConfID: 6691775 CauseID: 1557136759 OtherID: 1363323504 JT: Japanese Journal of Applied Physics MD: Yoo,50,4r,42103,2011,A Nonpolar a-Plane GaN Grown on a Hemispherical Patterned r-Plane Sapphire Substrate DOI: 10.1143/JJAP.50.042103(Journal) (6691775-N) DOI: 10.7567/JJAP.50.042103(Journal) ========================================================== Created: 2023-02-01 12:46:01 ConfID: 6716351 CauseID: 1560040484 OtherID: 1363321205 JT: Japanese Journal of Applied Physics MD: Zhang,51,7s,729,2012,Ultrasound-Mediated Gene Transfection In vitro: Enhanced Efficiency by Complexation of Plasmid DNA DOI: 10.1143/JJAP.51.07GF29(Journal) (6716351-N) DOI: 10.7567/JJAP.51.07GF29(Journal) ========================================================== Created: 2023-01-05 12:02:46 ConfID: 6691772 CauseID: 1557136756 OtherID: 1363323503 JT: Japanese Journal of Applied Physics MD: Hara,50,4r,41502,2011,Ultraviolet-Light-Induced Desorption of Oxygen from SrTiO3 Surfaces DOI: 10.1143/JJAP.50.041502(Journal) (6691772-N) DOI: 10.7567/JJAP.50.041502(Journal) ========================================================== Created: 2023-02-01 12:46:03 ConfID: 6716348 CauseID: 1560040480 OtherID: 1363321200 JT: Japanese Journal of Applied Physics MD: Takada,51,7s,723,2012,High Voltage Staircase Drive Circuit for Triggered High-Intensity Focused Ultrasound Treatment DOI: 10.1143/JJAP.51.07GF23(Journal) (6716348-N) DOI: 10.7567/JJAP.51.07GF23(Journal) ========================================================== Created: 2023-01-05 12:02:47 ConfID: 6691773 CauseID: 1557136758 OtherID: 1363323497 JT: Japanese Journal of Applied Physics MD: Nong,50,4r,40206,2011,Enhanced Properties in Single-Walled Carbon Nanotubes Based Saturable Absorber for All Optical Signal Regeneration DOI: 10.1143/JJAP.50.040206(Journal) (6691773-N) DOI: 10.7567/JJAP.50.040206(Journal) ========================================================== Created: 2023-02-01 12:46:04 ConfID: 6716349 CauseID: 1560040482 OtherID: 1363320728 JT: Japanese Journal of Applied Physics MD: Chiu,51,4s,411,2012,Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate DOI: 10.1143/JJAP.51.04DG11(Journal) (6716349-N) DOI: 10.7567/JJAP.51.04DG11(Journal) ========================================================== Created: 2023-01-05 12:02:44 ConfID: 6691770 CauseID: 1557136750 OtherID: 1363323520 JT: Japanese Journal of Applied Physics MD: Kim,50,4r,42102,2011,Light Output Power Enhancement of GaN-Based Light Emitting Diodes with Periodic Deflector Embedded on the Wet Etch Patterned Sapphire Substrate DOI: 10.1143/JJAP.50.042102(Journal) (6691770-N) DOI: 10.7567/JJAP.50.042102(Journal) ========================================================== Created: 2023-02-01 12:46:00 ConfID: 6716346 CauseID: 1560040479 OtherID: 1363320096 JT: Japanese Journal of Applied Physics MD: Baba,51,12r,125201,2012,Perylene and Perylene-Derivative Nano-Cocrystals: Preparation and Physicochemical Property DOI: 10.1143/JJAP.51.125201(Journal) (6716346-N) DOI: 10.7567/JJAP.51.125201(Journal) ========================================================== Created: 2023-01-05 12:02:45 ConfID: 6691771 CauseID: 1557136754 OtherID: 1363323514 JT: Japanese Journal of Applied Physics MD: Omura,50,4r,44301,2011,Impact of Dot-Size and Dot-Location Variations on Capacitance–Voltage Characteristics and Flat-Band Voltage Shift of Quantum-Dot Non-Volatile Memory Cells DOI: 10.1143/JJAP.50.044301(Journal) (6691771-N) DOI: 10.7567/JJAP.50.044301(Journal) ========================================================== Created: 2023-02-01 12:46:04 ConfID: 6716347 CauseID: 1560040481 OtherID: 1363320103 JT: Japanese Journal of Applied Physics MD: Oya,51,12r,125203,2012,Morphological Observations of Mesenchymal Stem Cell Adhesion to a Nanoperiodic-Structured Titanium Surface Patterned Using Femtosecond Laser Processing DOI: 10.1143/JJAP.51.125203(Journal) (6716347-N) DOI: 10.7567/JJAP.51.125203(Journal) ========================================================== Created: 2023-01-05 12:03:03 ConfID: 6691768 CauseID: 1557136792 OtherID: 1363323539 JT: Japanese Journal of Applied Physics MD: Kozielski,50,4r,48004,2011,Light Controlled Piezoelectric Transformer DOI: 10.1143/JJAP.50.048004(Journal) (6691768-N) DOI: 10.7567/JJAP.50.048004(Journal) ========================================================== Created: 2023-02-01 12:45:57 ConfID: 6716344 CauseID: 1560040472 OtherID: 1363320038 JT: Japanese Journal of Applied Physics MD: Kusano,51,11r,116301,2012,Electron Mobility and Longitudinal Diffusion Coefficient in High-Density Gaseous Xenon DOI: 10.1143/JJAP.51.116301(Journal) (6716344-N) DOI: 10.7567/JJAP.51.116301(Journal) ========================================================== Created: 2023-01-05 12:03:21 ConfID: 6691769 CauseID: 1557136835 OtherID: 1363323578 JT: Japanese Journal of Applied Physics MD: Zaitsu,50,4s,410,2011,Low Gate-Induced Drain Leakage and Its Physical Origins in Si Nanowire Transistors DOI: 10.1143/JJAP.50.04DC10(Journal) (6691769-N) DOI: 10.7567/JJAP.50.04DC10(Journal) ========================================================== Created: 2023-02-01 12:45:57 ConfID: 6716345 CauseID: 1560040473 OtherID: 1363321167 JT: Japanese Journal of Applied Physics MD: Honjo,51,7s,706,2012,Optimization of Correlation Kernel Size for Accurate Estimation of Myocardial Contraction and Relaxation DOI: 10.1143/JJAP.51.07GF06(Journal) (6716345-N) DOI: 10.7567/JJAP.51.07GF06(Journal) ========================================================== Created: 2023-02-01 12:44:52 ConfID: 6716294 CauseID: 1560040272 OtherID: 1363320005 JT: Japanese Journal of Applied Physics MD: Watanabe,51,11r,112101,2012,Thermo-Optic Coefficients of 4H-SiC, GaN, and AlN for Ultraviolet to Infrared Regions up to 500 °C DOI: 10.1143/JJAP.51.112101(Journal) (6716294-N) DOI: 10.7567/JJAP.51.112101(Journal) ========================================================== Created: 2023-02-01 12:44:51 ConfID: 6716295 CauseID: 1560040271 OtherID: 1363321421 JT: Japanese Journal of Applied Physics MD: Lai,51,9r,97001,2012,Effect of Cell Position on Impedance Measurement in Microfluidic Channel with Planar Microelectrodes and a Three-Pillar Structure DOI: 10.1143/JJAP.51.097001(Journal) (6716295-N) DOI: 10.7567/JJAP.51.097001(Journal) ========================================================== Created: 2023-02-01 12:44:50 ConfID: 6716292 CauseID: 1560040269 OtherID: 1363320980 JT: Japanese Journal of Applied Physics MD: Hong,51,6s,614,2012,Molecular Dynamics Study on Enhanced Cu Coverage of Trench Filling with Low-Index Ta Surfaces DOI: 10.1143/JJAP.51.06FF14(Journal) (6716292-N) DOI: 10.7567/JJAP.51.06FF14(Journal) ========================================================== Created: 2023-02-01 12:44:42 ConfID: 6716293 CauseID: 1560040244 OtherID: 1363320043 JT: Japanese Journal of Applied Physics MD: Taniuchi,51,11r,116101,2012,A New Floating-Probe for Measurement of Insulated Plasma Produced by Radio-Frequency Power DOI: 10.1143/JJAP.51.116101(Journal) (6716293-N) DOI: 10.7567/JJAP.51.116101(Journal) ========================================================== Created: 2023-02-01 12:44:47 ConfID: 6716290 CauseID: 1560040255 OtherID: 1363319989 JT: Japanese Journal of Applied Physics MD: Honda,51,11r,110202,2012,Defect Evolution in Multiwalled Carbon Nanotube Films Irradiated by Ar Ions DOI: 10.1143/JJAP.51.110202(Journal) (6716290-N) DOI: 10.7567/JJAP.51.110202(Journal) ========================================================== Created: 2023-02-01 12:44:48 ConfID: 6716291 CauseID: 1560040257 OtherID: 1363320022 JT: Japanese Journal of Applied Physics MD: Naitou,51,11r,115101,2012,Tip-Induced Deformation of Graphene on SiO2 Assessed by Capacitance Measurement DOI: 10.1143/JJAP.51.115101(Journal) (6716291-N) DOI: 10.7567/JJAP.51.115101(Journal) ========================================================== Created: 2023-02-01 12:44:49 ConfID: 6716288 CauseID: 1560040250 OtherID: 1363319920 JT: Japanese Journal of Applied Physics MD: Han,51,10r,100201,2012,Effect of Internal Electric Field in Well Layer of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes on Efficiency Droop DOI: 10.1143/JJAP.51.100201(Journal) (6716288-N) DOI: 10.7567/JJAP.51.100201(Journal) ========================================================== Created: 2023-02-01 12:44:45 ConfID: 6716289 CauseID: 1560040252 OtherID: 1363321419 JT: Japanese Journal of Applied Physics MD: Toh,51,9r,95501,2012,Epitaxy of Orthorhombic BaSi2 with Preferential In-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature DOI: 10.1143/JJAP.51.095501(Journal) (6716289-N) DOI: 10.7567/JJAP.51.095501(Journal) ========================================================== Created: 2023-02-01 12:44:59 ConfID: 6716302 CauseID: 1560040288 OtherID: 1363320015 JT: Japanese Journal of Applied Physics MD: Hayashi,51,11r,112601,2012,High Stability and Efficiency of GaN Photocatalyst for Hydrogen Generation from Water DOI: 10.1143/JJAP.51.112601(Journal) (6716302-N) DOI: 10.7567/JJAP.51.112601(Journal) ========================================================== Created: 2023-02-01 12:45:00 ConfID: 6716303 CauseID: 1560040299 OtherID: 1363320026 JT: Japanese Journal of Applied Physics MD: Tanabe,51,11r,113101,2012,Preparation of YBa2Cu3O7-δ Patterned Film Using Metal Organic Deposition with Electron Beam Irradiation DOI: 10.1143/JJAP.51.113101(Journal) (6716303-N) DOI: 10.7567/JJAP.51.113101(Journal) ========================================================== Created: 2023-02-01 12:44:58 ConfID: 6716300 CauseID: 1560040287 OtherID: 1363321029 JT: Japanese Journal of Applied Physics MD: Lee,51,6s,605,2012,Electrowetting Lens Employing Hemispherical Cavity Formed by Hydrofluoric Acid, Nitric Acid, and Acetic Acid Etching of Silicon DOI: 10.1143/JJAP.51.06FL05(Journal) (6716300-N) DOI: 10.7567/JJAP.51.06FL05(Journal) ========================================================== Created: 2023-02-01 12:44:57 ConfID: 6716301 CauseID: 1560040286 OtherID: 1363320028 JT: Japanese Journal of Applied Physics MD: Ishii,51,11r,112502,2012,Compensation Method for Phase Fluctuation in Holographic Data Storage DOI: 10.1143/JJAP.51.112502(Journal) (6716301-N) DOI: 10.7567/JJAP.51.112502(Journal) ========================================================== Created: 2023-02-01 12:44:56 ConfID: 6716298 CauseID: 1560040283 OtherID: 1363320921 JT: Japanese Journal of Applied Physics MD: Gumi,51,6s,612,2012,Direct Synthesis of Graphene on SiO2 Substrates by Transfer-Free Processes DOI: 10.1143/JJAP.51.06FD12(Journal) (6716298-N) DOI: 10.7567/JJAP.51.06FD12(Journal) ========================================================== Created: 2023-02-01 12:44:56 ConfID: 6716299 CauseID: 1560040284 OtherID: 1363321179 JT: Japanese Journal of Applied Physics MD: Kuroda,51,7s,701,2012,Fundamental Study for the Solution of Thermoacoustic Phenomenon Using Numerical Calculation: Relationship between the Stack Installation Position and Heat Flow DOI: 10.1143/JJAP.51.07GE01(Journal) (6716299-N) DOI: 10.7567/JJAP.51.07GE01(Journal) ========================================================== Created: 2023-02-01 12:44:53 ConfID: 6716296 CauseID: 1560040274 OtherID: 1363320016 JT: Japanese Journal of Applied Physics MD: Jang,51,11r,115501,2012,Study of a-Plane GaN Epitaxial Lateral Overgrowth Using Carbonized Photoresist Mask on r-Plane Sapphire DOI: 10.1143/JJAP.51.115501(Journal) (6716296-N) DOI: 10.7567/JJAP.51.115501(Journal) ========================================================== Created: 2023-02-01 12:44:53 ConfID: 6716297 CauseID: 1560040275 OtherID: 1363321417 JT: Japanese Journal of Applied Physics MD: Saito,51,9r,96601,2012,New Method for Projectile Velocity Measurement Using Faraday-Type Electromagnetic Sensor for Hypervelocity Impact Experiments and Detection Efficiency of the Method DOI: 10.1143/JJAP.51.096601(Journal) (6716297-N) DOI: 10.7567/JJAP.51.096601(Journal) ========================================================== Created: 2023-02-01 12:45:08 ConfID: 6716310 CauseID: 1560040320 OtherID: 1363320040 JT: Japanese Journal of Applied Physics MD: Inoue,51,11r,116202,2012,Properties of Indium–Zinc-Oxide Films Synthesized by Radio Frequency Magnetron Sputtering Based on Gas Phase Monitoring Using Multi-Micro Hollow Cathode Lamp DOI: 10.1143/JJAP.51.116202(Journal) (6716310-N) DOI: 10.7567/JJAP.51.116202(Journal) ========================================================== Created: 2023-02-01 12:45:13 ConfID: 6716311 CauseID: 1560040330 OtherID: 1363320000 JT: Japanese Journal of Applied Physics MD: Arulkumaran,51,11r,111001,2012,Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate DOI: 10.1143/JJAP.51.111001(Journal) (6716311-N) DOI: 10.7567/JJAP.51.111001(Journal) ========================================================== Created: 2023-02-01 12:45:06 ConfID: 6716308 CauseID: 1560040315 OtherID: 1363320671 JT: Japanese Journal of Applied Physics MD: Seki,51,4s,407,2012,Estimation of Breakdown Electric-Field Strength While Reflecting Local Structures of SiO2 Gate Dielectrics Using First-Principles Molecular Orbital Calculation Technique DOI: 10.1143/JJAP.51.04DA07(Journal) (6716308-N) DOI: 10.7567/JJAP.51.04DA07(Journal) ========================================================== Created: 2023-02-01 12:45:07 ConfID: 6716309 CauseID: 1560040319 OtherID: 1363320099 JT: Japanese Journal of Applied Physics MD: Lin,51,12r,125101,2012,First-Principles Calculations of Adatom–Vacancy Pairs on the Graphene DOI: 10.1143/JJAP.51.125101(Journal) (6716309-N) DOI: 10.7567/JJAP.51.125101(Journal) ========================================================== Created: 2023-02-01 12:45:02 ConfID: 6716306 CauseID: 1560040303 OtherID: 1363320042 JT: Japanese Journal of Applied Physics MD: Ito,51,11r,116201,2012,Preparation of Aqueous Dispersion of Titanium Dioxide Nanoparticles using Plasma on Liquid Surface DOI: 10.1143/JJAP.51.116201(Journal) (6716306-N) DOI: 10.7567/JJAP.51.116201(Journal) ========================================================== Created: 2023-02-01 12:45:04 ConfID: 6716307 CauseID: 1560040308 OtherID: 1363320057 JT: Japanese Journal of Applied Physics MD: Kosuga,51,12r,121803,2012,Effects of the Defects on the Thermoelectric Properties of Cu–In–Te Chalcopyrite-Related Compounds DOI: 10.1143/JJAP.51.121803(Journal) (6716307-N) DOI: 10.7567/JJAP.51.121803(Journal) ========================================================== Created: 2023-02-01 12:45:00 ConfID: 6716304 CauseID: 1560040300 OtherID: 1363320067 JT: Japanese Journal of Applied Physics MD: Kuroda,51,12r,120201,2012,Transient Population Inversion Induced and Probed by a Signal Pulse in a Continuous-Wave-Pumped Erbium-Doped Fiber Amplifier DOI: 10.1143/JJAP.51.120201(Journal) (6716304-N) DOI: 10.7567/JJAP.51.120201(Journal) ========================================================== Created: 2023-02-01 12:45:01 ConfID: 6716305 CauseID: 1560040301 OtherID: 1363320020 JT: Japanese Journal of Applied Physics MD: Yang,51,11r,115001,2012,Characterizations of High Stability of Field Emission of ZnO Nanorods Synthesized by Thermal-Vapor Growth DOI: 10.1143/JJAP.51.115001(Journal) (6716305-N) DOI: 10.7567/JJAP.51.115001(Journal) ========================================================== Created: 2023-02-01 12:45:08 ConfID: 6716318 CauseID: 1560040321 OtherID: 1363320668 JT: Japanese Journal of Applied Physics MD: Chen,51,4s,402,2012,Single-Tube Characterization Methodology for Experimental and Analytical Evaluation of Carbon Nanotube Synthesis DOI: 10.1143/JJAP.51.04DB02(Journal) (6716318-N) DOI: 10.7567/JJAP.51.04DB02(Journal) ========================================================== Created: 2023-02-01 12:45:26 ConfID: 6716319 CauseID: 1560040377 OtherID: 1363320073 JT: Japanese Journal of Applied Physics MD: Liu,51,12r,122403,2012,Photoluminescence Study of Deep Levels in CuInS2 Thin Films Grown by Sulfurization Using Ditertiarybutylsulfide DOI: 10.1143/JJAP.51.122403(Journal) (6716319-N) DOI: 10.7567/JJAP.51.122403(Journal) ========================================================== Created: 2023-02-01 12:45:24 ConfID: 6716316 CauseID: 1560040361 OtherID: 1363321128 JT: Japanese Journal of Applied Physics MD: Nakase,51,7s,716,2012,Nondestructive Evaluation of Plane Crack Tip in a Thin Plate Using Laser-Induced Pulse Wave and Symmetric Lamb Wave DOI: 10.1143/JJAP.51.07GB16(Journal) (6716316-N) DOI: 10.7567/JJAP.51.07GB16(Journal) ========================================================== Created: 2023-02-01 12:45:22 ConfID: 6716317 CauseID: 1560040366 OtherID: 1363319922 JT: Japanese Journal of Applied Physics MD: Takagi,51,10r,100203,2012,Modulation of Electron-States of Graphite Thin Films by the Nearly Free Electron States of Metal Surfaces DOI: 10.1143/JJAP.51.100203(Journal) (6716317-N) DOI: 10.7567/JJAP.51.100203(Journal) ========================================================== Created: 2023-02-01 12:45:17 ConfID: 6716314 CauseID: 1560040352 OtherID: 1363320060 JT: Japanese Journal of Applied Physics MD: Yajima,51,12r,122201,2012,Proposal of All-Optical Active Microring Logic Gate for Microring Processor DOI: 10.1143/JJAP.51.122201(Journal) (6716314-N) DOI: 10.7567/JJAP.51.122201(Journal) ========================================================== Created: 2023-02-01 12:45:20 ConfID: 6716315 CauseID: 1560040359 OtherID: 1363320682 JT: Japanese Journal of Applied Physics MD: Ishikawa,51,4s,405,2012,Nanowire-Width and Dopant-Species Dependences of Carrier Transport Characteristics of Schottky Barrier Source/Drain Nanowire Field-Effect Transistors DOI: 10.1143/JJAP.51.04DC05(Journal) (6716315-N) DOI: 10.7567/JJAP.51.04DC05(Journal) ========================================================== Created: 2023-02-01 12:45:11 ConfID: 6716312 CauseID: 1560040335 OtherID: 1363321117 JT: Japanese Journal of Applied Physics MD: Inoue,51,7s,712,2012,Reflection and Transmission Behaviors of Ultrasonic Wave at Nano-Air Gap Examined Using Newton's Ring Specimen DOI: 10.1143/JJAP.51.07GB12(Journal) (6716312-N) DOI: 10.7567/JJAP.51.07GB12(Journal) ========================================================== Created: 2023-02-01 12:45:16 ConfID: 6716313 CauseID: 1560040350 OtherID: 1363320840 JT: Japanese Journal of Applied Physics MD: Watanabe,51,5s,501,2012,Conformal Copper Coating of True Three-Dimensional Through-Holes Using Supercritical Carbon Dioxide DOI: 10.1143/JJAP.51.05EA01(Journal) (6716313-N) DOI: 10.7567/JJAP.51.05EA01(Journal) ========================================================== Created: 2023-01-05 12:03:58 ConfID: 6691942 CauseID: 1557136908 OtherID: 1363323587 JT: Japanese Journal of Applied Physics MD: Park,50,4s,407,2011,Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3 Blocking Layer in Flash Memory Device DOI: 10.1143/JJAP.50.04DD07(Journal) (6691942-N) DOI: 10.7567/JJAP.50.04DD07(Journal) ========================================================== Created: 2023-02-01 12:49:04 ConfID: 6716518 CauseID: 1560040908 OtherID: 1363321038 JT: Japanese Journal of Applied Physics MD: Sun,51,6s,609,2012,Implementation of Complementary Metal–Oxide–Semiconductor Microelectromechanical Systems Lorentz Force Two Axis Angular Actuator DOI: 10.1143/JJAP.51.06FL09(Journal) (6716518-N) DOI: 10.7567/JJAP.51.06FL09(Journal) ========================================================== Created: 2023-01-05 12:03:59 ConfID: 6691943 CauseID: 1557136909 OtherID: 1363323634 JT: Japanese Journal of Applied Physics MD: Teraoka,50,4s,401,2011,Analysis of the Nonlinear Optical Parameter of ZnO Channel Waveguides DOI: 10.1143/JJAP.50.04DG01(Journal) (6691943-N) DOI: 10.7567/JJAP.50.04DG01(Journal) ========================================================== Created: 2023-02-01 12:49:01 ConfID: 6716519 CauseID: 1560040910 OtherID: 1363320942 JT: Japanese Journal of Applied Physics MD: Du,51,6s,601,2012,Single-Photon Detection by a Simple Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor DOI: 10.1143/JJAP.51.06FE01(Journal) (6716519-N) DOI: 10.7567/JJAP.51.06FE01(Journal) ========================================================== Created: 2023-01-05 12:13:18 ConfID: 6691940 CauseID: 1557138217 OtherID: 1363322912 JT: Japanese Journal of Applied Physics MD: Moon,50,11r,110208,2011,Mode Order Dependent Q-Spoiling Behavior in a Coated Cylindrical Microcavity Laser DOI: 10.1143/JJAP.50.110208(Journal) (6691940-N) DOI: 10.7567/JJAP.50.110208(Journal) ========================================================== Created: 2023-02-01 12:48:56 ConfID: 6716516 CauseID: 1560040900 OtherID: 1363320901 JT: Japanese Journal of Applied Physics MD: Kon,51,6s,604,2012,Characterization of Fogging and Develop-Loading Effects in Electron-Beam Direct-Writing Technology DOI: 10.1143/JJAP.51.06FC04(Journal) (6716516-N) DOI: 10.7567/JJAP.51.06FC04(Journal) ========================================================== Created: 2023-01-05 12:03:57 ConfID: 6691941 CauseID: 1557136907 OtherID: 1363323620 JT: Japanese Journal of Applied Physics MD: Otsuka,50,4s,407,2011,Low-Pressure Direct-Liquid-Cooling Technology for GaN Power Transistors DOI: 10.1143/JJAP.50.04DF07(Journal) (6691941-N) DOI: 10.7567/JJAP.50.04DF07(Journal) ========================================================== Created: 2023-02-01 12:48:58 ConfID: 6716517 CauseID: 1560040894 OtherID: 1363320968 JT: Japanese Journal of Applied Physics MD: Mamat,51,6s,603,2012,Thickness-Dependent Characteristics of Aluminium-Doped Zinc Oxide Nanorod-Array-Based, Ultraviolet Photoconductive Sensors DOI: 10.1143/JJAP.51.06FF03(Journal) (6716517-N) DOI: 10.7567/JJAP.51.06FF03(Journal) ========================================================== Created: 2023-01-05 12:03:56 ConfID: 6691938 CauseID: 1557136905 OtherID: 1363323616 JT: Japanese Journal of Applied Physics MD: Wang,50,4s,406,2011,Reduced Contact Resistance and Improved Surface Morphology of Ohmic Contacts on GaN Employing KrF Laser Irradiation DOI: 10.1143/JJAP.50.04DF06(Journal) (6691938-N) DOI: 10.7567/JJAP.50.04DF06(Journal) ========================================================== Created: 2023-02-01 12:48:59 ConfID: 6716514 CauseID: 1560040897 OtherID: 1363320951 JT: Japanese Journal of Applied Physics MD: Ryoo,51,6s,606,2012,Novel Protruded-Shape Unipolar Resistive Random Access Memory Structure for Improving Switching Uniformity through Excellent Conductive Filament Controllability DOI: 10.1143/JJAP.51.06FE06(Journal) (6716514-N) DOI: 10.7567/JJAP.51.06FE06(Journal) ========================================================== Created: 2023-01-05 12:03:57 ConfID: 6691939 CauseID: 1557136906 OtherID: 1363323650 JT: Japanese Journal of Applied Physics MD: Akiyama,50,4s,415,2011,Fabrication and Photocurrent Generation of Multilayer Assemblies Consisting of Silver-nanoparticles, Polydiacetylene, and Polyions DOI: 10.1143/JJAP.50.04DH15(Journal) (6691939-N) DOI: 10.7567/JJAP.50.04DH15(Journal) ========================================================== Created: 2023-02-01 12:48:56 ConfID: 6716515 CauseID: 1560040899 OtherID: 1363320958 JT: Japanese Journal of Applied Physics MD: Orlov,51,6s,610,2012,Experimental Test of Landauer's Principle at the Sub-kBT Level DOI: 10.1143/JJAP.51.06FE10(Journal) (6716515-N) DOI: 10.7567/JJAP.51.06FE10(Journal) ========================================================== Created: 2023-01-05 12:03:55 ConfID: 6691936 CauseID: 1557136903 OtherID: 1363323662 JT: Japanese Journal of Applied Physics MD: Yamaguchi,50,4s,408,2011,Application of Droplet Elimination Process by Radical-Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure DOI: 10.1143/JJAP.50.04DH08(Journal) (6691936-N) DOI: 10.7567/JJAP.50.04DH08(Journal) ========================================================== Created: 2023-02-01 12:48:52 ConfID: 6716512 CauseID: 1560040889 OtherID: 1363320940 JT: Japanese Journal of Applied Physics MD: Maeda,51,6s,616,2012,Formation of Graphene Nanofin Networks on Graphene/SiC(0001) by Molecular Beam Epitaxy DOI: 10.1143/JJAP.51.06FD16(Journal) (6716512-N) DOI: 10.7567/JJAP.51.06FD16(Journal) ========================================================== Created: 2023-01-05 12:03:55 ConfID: 6691937 CauseID: 1557136904 OtherID: 1363323665 JT: Japanese Journal of Applied Physics MD: Sugawa,50,4s,414,2011,Facile Phase Transfer of Gold and Au-Core/Ag-Shell Nanoparticles from Aqueous to Toluene Solution Using Alkylamine Molecules and Their Assemblies on Solid Supports DOI: 10.1143/JJAP.50.04DH14(Journal) (6691937-N) DOI: 10.7567/JJAP.50.04DH14(Journal) ========================================================== Created: 2023-02-01 12:48:58 ConfID: 6716513 CauseID: 1560040895 OtherID: 1363320967 JT: Japanese Journal of Applied Physics MD: Hwang,51,6s,617,2012,Design and Characterization of Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors DOI: 10.1143/JJAP.51.06FE17(Journal) (6716513-N) DOI: 10.7567/JJAP.51.06FE17(Journal) ========================================================== Created: 2023-01-05 12:04:02 ConfID: 6691950 CauseID: 1557136917 OtherID: 1363323585 JT: Japanese Journal of Applied Physics MD: Kamakura,50,4s,410,2011,Phenomenological Model for Stress and Relaxation Processes of Resistance Drift in Magnetic Tunnel Junctions DOI: 10.1143/JJAP.50.04DD10(Journal) (6691950-N) DOI: 10.7567/JJAP.50.04DD10(Journal) ========================================================== Created: 2023-02-01 12:49:11 ConfID: 6716526 CauseID: 1560040927 OtherID: 1363320959 JT: Japanese Journal of Applied Physics MD: Hayashi,51,6s,611,2012,Collision-Based Computing Using Single-Electron Circuits DOI: 10.1143/JJAP.51.06FE11(Journal) (6716526-N) DOI: 10.7567/JJAP.51.06FE11(Journal) ========================================================== Created: 2023-01-05 12:04:02 ConfID: 6691951 CauseID: 1557136919 OtherID: 1363323611 JT: Japanese Journal of Applied Physics MD: Kawamura,50,4s,405,2011,ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition DOI: 10.1143/JJAP.50.04DF05(Journal) (6691951-N) DOI: 10.7567/JJAP.50.04DF05(Journal) ========================================================== Created: 2023-02-01 12:49:10 ConfID: 6716527 CauseID: 1560040929 OtherID: 1363320953 JT: Japanese Journal of Applied Physics MD: Ghali,51,6s,614,2012,Vertical-Electrical-Field-Induced Control of the Exciton Fine Structure Splitting in GaAs Island Quantum Dots for the Generation of Polarization-Entangled Photons DOI: 10.1143/JJAP.51.06FE14(Journal) (6716527-N) DOI: 10.7567/JJAP.51.06FE14(Journal) ========================================================== Created: 2023-01-05 12:13:28 ConfID: 6691948 CauseID: 1557138238 OtherID: 1363324243 JT: Japanese Journal of Applied Physics MD: Yoshioka,50,7s,716,2011,Estimation for Amplitude Decrease of Discretized Hydrophone Output Voltage by Imperfect Synchronous Averaging Using External Trigger DOI: 10.1143/JJAP.50.07HC16(Journal) (6691948-N) DOI: 10.7567/JJAP.50.07HC16(Journal) ========================================================== Created: 2023-02-01 12:48:57 ConfID: 6716524 CauseID: 1560040902 OtherID: 1363320831 JT: Japanese Journal of Applied Physics MD: Gu,51,5s,503,2012,Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-k Dielectric Fluorocarbon on Advanced Cu Interconnects DOI: 10.1143/JJAP.51.05EC03(Journal) (6716524-N) DOI: 10.7567/JJAP.51.05EC03(Journal) ========================================================== Created: 2023-01-05 12:04:01 ConfID: 6691949 CauseID: 1557136916 OtherID: 1363323615 JT: Japanese Journal of Applied Physics MD: Nakayama,50,4s,404,2011,Drift Phenomena of Forward and Reverse Recovery Characteristics in 0001 4H-SiC p–i–n Diode DOI: 10.1143/JJAP.50.04DF04(Journal) (6691949-N) DOI: 10.7567/JJAP.50.04DF04(Journal) ========================================================== Created: 2023-02-01 12:49:08 ConfID: 6716525 CauseID: 1560040920 OtherID: 1363320756 JT: Japanese Journal of Applied Physics MD: Okada,51,4s,407,2012,Light-Emitting Field-Effect Transistors Having Metal Electrodes Modified with an Organic Thin Film DOI: 10.1143/JJAP.51.04DK07(Journal) (6716525-N) DOI: 10.7567/JJAP.51.04DK07(Journal) ========================================================== Created: 2023-01-05 12:04:00 ConfID: 6691946 CauseID: 1557136915 OtherID: 1363323637 JT: Japanese Journal of Applied Physics MD: Majid,50,4s,410,2011,Excited State Bilayer Quantum Dot Lasers at 1.3 µm DOI: 10.1143/JJAP.50.04DG10(Journal) (6691946-N) DOI: 10.7567/JJAP.50.04DG10(Journal) ========================================================== Created: 2023-02-01 12:49:07 ConfID: 6716522 CauseID: 1560040917 OtherID: 1363320857 JT: Japanese Journal of Applied Physics MD: Katagiri,51,5s,502,2012,Fabrication and Characterization of Planarized Carbon Nanotube Via Interconnects DOI: 10.1143/JJAP.51.05ED02(Journal) (6716522-N) DOI: 10.7567/JJAP.51.05ED02(Journal) ========================================================== Created: 2023-01-05 12:13:23 ConfID: 6691947 CauseID: 1557138232 OtherID: 1363324411 JT: Japanese Journal of Applied Physics MD: Okada,50,8s1,806,2011,Spatiotemporal Distribution of Nitrogen Rotational Temperature during Pulsed Discharge in Air DOI: 10.1143/JJAP.50.08JB06(Journal) (6691947-N) DOI: 10.7567/JJAP.50.08JB06(Journal) ========================================================== Created: 2023-02-01 12:49:07 ConfID: 6716523 CauseID: 1560040918 OtherID: 1363320750 JT: Japanese Journal of Applied Physics MD: Inoue,51,4s,410,2012,Organic Solar Cells Based on Electrodeposited Polyaniline Films DOI: 10.1143/JJAP.51.04DK10(Journal) (6716523-N) DOI: 10.7567/JJAP.51.04DK10(Journal) ========================================================== Created: 2023-01-05 12:03:59 ConfID: 6691944 CauseID: 1557136910 OtherID: 1363323643 JT: Japanese Journal of Applied Physics MD: Tanaka,50,4s,403,2011,Time-Resolved Measurements of Sum-Frequency Generation Strongly Enhanced in (113)B GaAs/AlAs Coupled Multilayer Cavity DOI: 10.1143/JJAP.50.04DG03(Journal) (6691944-N) DOI: 10.7567/JJAP.50.04DG03(Journal) ========================================================== Created: 2023-02-01 12:49:02 ConfID: 6716520 CauseID: 1560040912 OtherID: 1363320725 JT: Japanese Journal of Applied Physics MD: Sasaki,51,4s,406,2012,Postfabrication Independent Inductance and Quality Factor Adjustments of On-Chip Inductors by Above-CMOS Processing for Rapid Prototyping of Radio Frequency System on Chips DOI: 10.1143/JJAP.51.04DE06(Journal) (6716520-N) DOI: 10.7567/JJAP.51.04DE06(Journal) ========================================================== Created: 2023-01-05 12:04:00 ConfID: 6691945 CauseID: 1557136912 OtherID: 1363323632 JT: Japanese Journal of Applied Physics MD: Liu,50,4s,410,2011,Enhanced Device Performance of AlGaN/GaN High Electron Mobility Transistors with Thermal Oxidation Treatment DOI: 10.1143/JJAP.50.04DF10(Journal) (6691945-N) DOI: 10.7567/JJAP.50.04DF10(Journal) ========================================================== Created: 2023-02-01 12:49:06 ConfID: 6716521 CauseID: 1560040915 OtherID: 1363320954 JT: Japanese Journal of Applied Physics MD: Kamei,51,6s,619,2012,Fabrication and Characterization of NOR-Type Tri-Gate Flash Memory with Improved Inter-Poly Dielectric Layer by Rapid Thermal Oxidation DOI: 10.1143/JJAP.51.06FE19(Journal) (6716521-N) DOI: 10.7567/JJAP.51.06FE19(Journal) ========================================================== Created: 2023-01-05 12:04:05 ConfID: 6691958 CauseID: 1557136927 OtherID: 1363323638 JT: Japanese Journal of Applied Physics MD: Chen,50,4s,409,2011,Tunable Light Emission from GaN-Based Photonic Crystal with Ultraviolet AlN/AlGaN Distributed Bragg Reflector DOI: 10.1143/JJAP.50.04DG09(Journal) (6691958-N) DOI: 10.7567/JJAP.50.04DG09(Journal) ========================================================== Created: 2023-02-01 12:49:17 ConfID: 6716534 CauseID: 1560040950 OtherID: 1363320981 JT: Japanese Journal of Applied Physics MD: Pholprasit,51,6s,608,2012,Pattern Transfer Characterization after Double-Level Lithography for a Fabrication of the Three-Dimensional Aluminum Titanium Carbide Air Bearing Surface of the Hard Disk Slider DOI: 10.1143/JJAP.51.06FF08(Journal) (6716534-N) DOI: 10.7567/JJAP.51.06FF08(Journal) ========================================================== Created: 2023-01-05 12:04:06 ConfID: 6691959 CauseID: 1557136929 OtherID: 1363323579 JT: Japanese Journal of Applied Physics MD: Mitard,50,4s,417,2011,High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO2 Gate Dielectric DOI: 10.1143/JJAP.50.04DC17(Journal) (6691959-N) DOI: 10.7567/JJAP.50.04DC17(Journal) ========================================================== Created: 2023-02-01 12:49:21 ConfID: 6716535 CauseID: 1560040961 OtherID: 1363320853 JT: Japanese Journal of Applied Physics MD: Kimura,51,5s,504,2012,Impact of Hydrocarbon Control in Ultraviolet-Assisted Restoration Process for Extremely Porous Plasma Enhanced Chemical Vapor Deposition SiOCH Films with k = 2.0 DOI: 10.1143/JJAP.51.05EC04(Journal) (6716535-N) DOI: 10.7567/JJAP.51.05EC04(Journal) ========================================================== Created: 2023-01-05 12:04:04 ConfID: 6691956 CauseID: 1557136922 OtherID: 1363323629 JT: Japanese Journal of Applied Physics MD: Shih,50,4s,417,2011,A Semiconductor Soliton Cavity Laser Diode and its Output Characteristics DOI: 10.1143/JJAP.50.04DG17(Journal) (6691956-N) DOI: 10.7567/JJAP.50.04DG17(Journal) ========================================================== Created: 2023-02-01 12:49:15 ConfID: 6716532 CauseID: 1560040947 OtherID: 1363320858 JT: Japanese Journal of Applied Physics MD: Saito,51,5s,501,2012,A Study on Electrical Resistance of Carbon Nanotubes and Their Metal Contacts Using Simplified Test Structure DOI: 10.1143/JJAP.51.05ED01(Journal) (6716532-N) DOI: 10.7567/JJAP.51.05ED01(Journal) ========================================================== Created: 2023-01-05 12:04:05 ConfID: 6691957 CauseID: 1557136926 OtherID: 1363323621 JT: Japanese Journal of Applied Physics MD: Tsutsumi,50,4s,409,2011,New Stacked Metal–Insulator–Metal Capacitor with High Capacitance Density for Future InP-Based ICs DOI: 10.1143/JJAP.50.04DF09(Journal) (6691957-N) DOI: 10.7567/JJAP.50.04DF09(Journal) ========================================================== Created: 2023-02-01 12:49:16 ConfID: 6716533 CauseID: 1560040948 OtherID: 1363320930 JT: Japanese Journal of Applied Physics MD: Fujii,51,6s,611,2012,Carbon Nanotube-Based Floating Gate Memories with High-k Dielectrics DOI: 10.1143/JJAP.51.06FD11(Journal) (6716533-N) DOI: 10.7567/JJAP.51.06FD11(Journal) ========================================================== Created: 2023-01-05 12:13:49 ConfID: 6691954 CauseID: 1557138282 OtherID: 1363324396 JT: Japanese Journal of Applied Physics MD: Takahashi,50,8r,88007,2011,Effect of Dispersing Ag Micro Particles on Enhancing Surface Potential of CYTOP Electret Film DOI: 10.1143/JJAP.50.088007(Journal) (6691954-N) DOI: 10.7567/JJAP.50.088007(Journal) ========================================================== Created: 2023-02-01 12:49:14 ConfID: 6716530 CauseID: 1560040937 OtherID: 1363320855 JT: Japanese Journal of Applied Physics MD: Yokogawa,51,5s,506,2012,Thermal Transient Response and Its Modeling for Joule Heating in Cu/Low-κ Interconnects Under Pulsed Current DOI: 10.1143/JJAP.51.05EC06(Journal) (6716530-N) DOI: 10.7567/JJAP.51.05EC06(Journal) ========================================================== Created: 2023-01-05 12:13:48 ConfID: 6691955 CauseID: 1557138288 OtherID: 1363322956 JT: Japanese Journal of Applied Physics MD: Yang,50,11r,118001,2011,High-Optical-Power Operation of the Electroabsorption-Modulated Laser and Subsequent Changes in Eye Diagram and 3-dB Bandwidth DOI: 10.1143/JJAP.50.118001(Journal) (6691955-N) DOI: 10.7567/JJAP.50.118001(Journal) ========================================================== Created: 2023-02-01 12:49:19 ConfID: 6716531 CauseID: 1560040945 OtherID: 1363321004 JT: Japanese Journal of Applied Physics MD: Kasahara,51,6s,604,2012,Photodissolution Suppression and Photocatalytic Activity Improvement through Crystallinity Improvement of ZnO Nanocrystalline Thin Films DOI: 10.1143/JJAP.51.06FG04(Journal) (6716531-N) DOI: 10.7567/JJAP.51.06FG04(Journal) ========================================================== Created: 2023-01-05 12:04:03 ConfID: 6691952 CauseID: 1557136920 OtherID: 1363323633 JT: Japanese Journal of Applied Physics MD: Zhu,50,4s,408,2011,High Performance of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate DOI: 10.1143/JJAP.50.04DG08(Journal) (6691952-N) DOI: 10.7567/JJAP.50.04DG08(Journal) ========================================================== Created: 2023-02-01 12:49:11 ConfID: 6716528 CauseID: 1560040930 OtherID: 1363321003 JT: Japanese Journal of Applied Physics MD: Bae,51,6s,601,2012,Characterization of ZnO Tetrapods Prepared by a Simple Oxidation of Zn Plate in Air Atmosphere DOI: 10.1143/JJAP.51.06FG01(Journal) (6716528-N) DOI: 10.7567/JJAP.51.06FG01(Journal) ========================================================== Created: 2023-01-05 12:04:04 ConfID: 6691953 CauseID: 1557136921 OtherID: 1363323655 JT: Japanese Journal of Applied Physics MD: Mohan,50,4s,401,2011,Current Biased Resistive Switching in ZnO Whiskers DOI: 10.1143/JJAP.50.04DJ01(Journal) (6691953-N) DOI: 10.7567/JJAP.50.04DJ01(Journal) ========================================================== Created: 2023-02-01 12:49:14 ConfID: 6716529 CauseID: 1560040936 OtherID: 1363320994 JT: Japanese Journal of Applied Physics MD: Noh,51,6s,603,2012,Transfer Printing Method to Obtain Polarized Light Emission in Organic Light-Emitting Device DOI: 10.1143/JJAP.51.06FJ03(Journal) (6716529-N) DOI: 10.7567/JJAP.51.06FJ03(Journal) ========================================================== Created: 2023-01-05 12:13:56 ConfID: 6691966 CauseID: 1557138303 OtherID: 1363324329 JT: Japanese Journal of Applied Physics MD: Kim,50,7s,705,2011,Coherence Bandwidth Effects on Underwater Image Transmission in Multipath Channel DOI: 10.1143/JJAP.50.07HG05(Journal) (6691966-N) DOI: 10.7567/JJAP.50.07HG05(Journal) ========================================================== Created: 2023-02-01 12:49:33 ConfID: 6716542 CauseID: 1560040985 OtherID: 1363320983 JT: Japanese Journal of Applied Physics MD: Ohta,51,6s,602,2012,Evaluation of Chemical Bonding Features and Resistance Switching Behaviors of Ultrathin Si Oxide Dielectric Sandwiched Between Pt Electrodes DOI: 10.1143/JJAP.51.06FF02(Journal) (6716542-N) DOI: 10.7567/JJAP.51.06FF02(Journal) ========================================================== Created: 2023-01-05 12:13:58 ConfID: 6691967 CauseID: 1557138306 OtherID: 1363323442 JT: Japanese Journal of Applied Physics MD: Sato,50,3r,36204,2011,Reduction in Number of Sparks Generated in High-Density Plasma Process by Fixing the Wall Potential DOI: 10.1143/JJAP.50.036204(Journal) (6691967-N) DOI: 10.7567/JJAP.50.036204(Journal) ========================================================== Created: 2023-02-01 12:49:34 ConfID: 6716543 CauseID: 1560040986 OtherID: 1363321035 JT: Japanese Journal of Applied Physics MD: Ikegami,51,6s,617,2012,Fabrication of Three-Dimensional Metalized Movable Microstructures by the Combination of Two-Photon Microfabrication and Electroless Plating DOI: 10.1143/JJAP.51.06FL17(Journal) (6716543-N) DOI: 10.7567/JJAP.51.06FL17(Journal) ========================================================== Created: 2023-01-05 12:04:09 ConfID: 6691964 CauseID: 1557136934 OtherID: 1363323627 JT: Japanese Journal of Applied Physics MD: Morita,50,4s,402,2011,Optical Kerr Signals Markedly Enhanced by Increasing Quality Factor in a GaAs/AlAs Multilayer Cavity DOI: 10.1143/JJAP.50.04DG02(Journal) (6691964-N) DOI: 10.7567/JJAP.50.04DG02(Journal) ========================================================== Created: 2023-02-01 12:49:30 ConfID: 6716540 CauseID: 1560040983 OtherID: 1363321028 JT: Japanese Journal of Applied Physics MD: Choi,51,6s,613,2012,Miniaturized Dual-Axis Electrolytic Tilt Sensor DOI: 10.1143/JJAP.51.06FL13(Journal) (6716540-N) DOI: 10.7567/JJAP.51.06FL13(Journal) ========================================================== Created: 2023-01-05 12:13:52 ConfID: 6691965 CauseID: 1557138296 OtherID: 1363324234 JT: Japanese Journal of Applied Physics MD: Fujii,50,7s,705,2011,Development of Reflection Objective-Employed Collinear Mode-mismatched Thermal Lens Microscope DOI: 10.1143/JJAP.50.07HC05(Journal) (6691965-N) DOI: 10.7567/JJAP.50.07HC05(Journal) ========================================================== Created: 2023-02-01 12:49:33 ConfID: 6716541 CauseID: 1560040984 OtherID: 1363321016 JT: Japanese Journal of Applied Physics MD: Hiroshima,51,6s,610,2012,Throughput of Ultraviolet Nanoimprint in Pentafluoropropane Using Spin Coat Films under Thin Residual Layer Conditions DOI: 10.1143/JJAP.51.06FJ10(Journal) (6716541-N) DOI: 10.7567/JJAP.51.06FJ10(Journal) ========================================================== Created: 2023-01-05 12:04:08 ConfID: 6691962 CauseID: 1557136932 OtherID: 1363323569 JT: Japanese Journal of Applied Physics MD: Jung,50,4s,418,2011,Experimental Investigations on Ballistic Transport in Multi-Bridged Channel Field Effect Transistors DOI: 10.1143/JJAP.50.04DC18(Journal) (6691962-N) DOI: 10.7567/JJAP.50.04DC18(Journal) ========================================================== Created: 2023-02-01 12:49:29 ConfID: 6716538 CauseID: 1560040973 OtherID: 1363320914 JT: Japanese Journal of Applied Physics MD: Tseng,51,6s,603,2012,Extreme Ultraviolet Process Optimization for Contact Layer of 14 nm Node Logic and 16 nm Half Pitch Memory Devices DOI: 10.1143/JJAP.51.06FB03(Journal) (6716538-N) DOI: 10.7567/JJAP.51.06FB03(Journal) ========================================================== Created: 2023-01-05 12:04:09 ConfID: 6691963 CauseID: 1557136933 OtherID: 1363323619 JT: Japanese Journal of Applied Physics MD: Azhari,50,4s,401,2011,A 5.4–9.2 GHz 19.5 dB Complementary Metal–Oxide–Semiconductor Ultrawide-Band Receiver Front-End Low-Noise Amplifier DOI: 10.1143/JJAP.50.04DE01(Journal) (6691963-N) DOI: 10.7567/JJAP.50.04DE01(Journal) ========================================================== Created: 2023-02-01 12:49:22 ConfID: 6716539 CauseID: 1560040964 OtherID: 1363320848 JT: Japanese Journal of Applied Physics MD: Ohnishi,51,5s,505,2012,Effects of Atmosphere and Ultraviolet Light Irradiation on Chemical Mechanical Polishing Characteristics of SiC Wafers DOI: 10.1143/JJAP.51.05EF05(Journal) (6716539-N) DOI: 10.7567/JJAP.51.05EF05(Journal) ========================================================== Created: 2023-01-05 12:04:07 ConfID: 6691960 CauseID: 1557136930 OtherID: 1363323647 JT: Japanese Journal of Applied Physics MD: Masumoto,50,4s,401,2011,Luminescence Characteristics and Annealing Effect of Tb-Doped AlBNO Films for Inorganic Electroluminescence Devices DOI: 10.1143/JJAP.50.04DH01(Journal) (6691960-N) DOI: 10.7567/JJAP.50.04DH01(Journal) ========================================================== Created: 2023-02-01 12:49:25 ConfID: 6716536 CauseID: 1560040970 OtherID: 1363320976 JT: Japanese Journal of Applied Physics MD: Kodama,51,6s,607,2012,Electronic State Formation by Surface Atom Removal on a MoS2 Surface DOI: 10.1143/JJAP.51.06FF07(Journal) (6716536-N) DOI: 10.7567/JJAP.51.06FF07(Journal) ========================================================== Created: 2023-01-05 12:04:07 ConfID: 6691961 CauseID: 1557136931 OtherID: 1363323635 JT: Japanese Journal of Applied Physics MD: Kim,50,4s,411,2011,Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes DOI: 10.1143/JJAP.50.04DG11(Journal) (6691961-N) DOI: 10.7567/JJAP.50.04DG11(Journal) ========================================================== Created: 2023-02-01 12:49:29 ConfID: 6716537 CauseID: 1560040972 OtherID: 1363320922 JT: Japanese Journal of Applied Physics MD: Fujimoto,51,6s,607,2012,Thermal Durability of Diamond Like Carbon Films Containing Tungsten Fabricated by Focused-Ion-Beam Chemical Vapor Deposition DOI: 10.1143/JJAP.51.06FD07(Journal) (6716537-N) DOI: 10.7567/JJAP.51.06FD07(Journal) ========================================================== Created: 2023-01-05 12:03:38 ConfID: 6691910 CauseID: 1557136871 OtherID: 1363323604 JT: Japanese Journal of Applied Physics MD: Tomar,50,4s,410,2011,Low-Phase-Noise, High Switching Speed Digitally Controlled Ring Oscillator in 0.18 µm Complementary Metal Oxide Semiconductor DOI: 10.1143/JJAP.50.04DE10(Journal) (6691910-N) DOI: 10.7567/JJAP.50.04DE10(Journal) ========================================================== Created: 2023-02-01 12:48:28 ConfID: 6716486 CauseID: 1560040834 OtherID: 1363320591 JT: Japanese Journal of Applied Physics MD: In,51,3s,303,2012,Novel Driving Method for Two-Dimensional and Three-Dimensional Switchable Active Matrix Organic Light-Emitting Diode Displays for Emission and Programming Time Extension DOI: 10.1143/JJAP.51.03CD03(Journal) (6716486-N) DOI: 10.7567/JJAP.51.03CD03(Journal) ========================================================== Created: 2023-01-05 12:03:40 ConfID: 6691911 CauseID: 1557136873 OtherID: 1363323624 JT: Japanese Journal of Applied Physics MD: Fukushima,50,4s,416,2011,Impedance Analysis of Controlled-Polarization-Type Ferroelectric-Gate Thin Film Transistor Using Resistor–Capacitor Lumped Constant Circuit DOI: 10.1143/JJAP.50.04DD16(Journal) (6691911-N) DOI: 10.7567/JJAP.50.04DD16(Journal) ========================================================== Created: 2023-02-01 12:48:28 ConfID: 6716487 CauseID: 1560040835 OtherID: 1363321321 JT: Japanese Journal of Applied Physics MD: Katayama,51,8s2,804,2012,Proposal for Rewritable Microholographic Recording Using Polarization-Sensitive Materials DOI: 10.1143/JJAP.51.08JD04(Journal) (6716487-N) DOI: 10.7567/JJAP.51.08JD04(Journal) ========================================================== Created: 2023-01-05 12:03:36 ConfID: 6691908 CauseID: 1557136868 OtherID: 1363323571 JT: Japanese Journal of Applied Physics MD: Kamei,50,4s,414,2011,Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.50.04DC14(Journal) (6691908-N) DOI: 10.7567/JJAP.50.04DC14(Journal) ========================================================== Created: 2023-02-01 12:48:26 ConfID: 6716484 CauseID: 1560040831 OtherID: 1363321323 JT: Japanese Journal of Applied Physics MD: Koo,51,8s2,803,2012,Modified Two-Dimensional Soft Output Viterbi Algorithm with Two-Dimensional Partial Response Target for Holographic Data Storage DOI: 10.1143/JJAP.51.08JB03(Journal) (6716484-N) DOI: 10.7567/JJAP.51.08JB03(Journal) ========================================================== Created: 2023-01-05 12:03:37 ConfID: 6691909 CauseID: 1557136870 OtherID: 1363323595 JT: Japanese Journal of Applied Physics MD: Bae,50,4s,412,2011,Microstructural Characterization in Reliability Measurement of Phase Change Random Access Memory DOI: 10.1143/JJAP.50.04DD12(Journal) (6691909-N) DOI: 10.7567/JJAP.50.04DD12(Journal) ========================================================== Created: 2023-02-01 12:48:27 ConfID: 6716485 CauseID: 1560040833 OtherID: 1363320932 JT: Japanese Journal of Applied Physics MD: Okamoto,51,6s,608,2012,Immunosensors Based on Graphene Field-Effect Transistors Fabricated Using Antigen-Binding Fragment DOI: 10.1143/JJAP.51.06FD08(Journal) (6716485-N) DOI: 10.7567/JJAP.51.06FD08(Journal) ========================================================== Created: 2023-01-05 12:03:35 ConfID: 6691906 CauseID: 1557136867 OtherID: 1363323598 JT: Japanese Journal of Applied Physics MD: Ryoo,50,4s,415,2011,Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics DOI: 10.1143/JJAP.50.04DD15(Journal) (6691906-N) DOI: 10.7567/JJAP.50.04DD15(Journal) ========================================================== Created: 2023-02-01 12:48:25 ConfID: 6716482 CauseID: 1560040829 OtherID: 1363320583 JT: Japanese Journal of Applied Physics MD: Kim,51,3s,302,2012,An 8-bit Data Driving Scheme Based on Two-Step Digital-to-Analog Conversion for Integrated Data Drivers of Active-Matrix Organic Light-Emitting Diodes DOI: 10.1143/JJAP.51.03CD02(Journal) (6716482-N) DOI: 10.7567/JJAP.51.03CD02(Journal) ========================================================== Created: 2023-01-05 12:13:03 ConfID: 6691907 CauseID: 1557138167 OtherID: 1363324217 JT: Japanese Journal of Applied Physics MD: Ohki,50,7s,705,2011,Application of Complex Series Dynamics to Electromechanical Coupling System DOI: 10.1143/JJAP.50.07HB05(Journal) (6691907-N) DOI: 10.7567/JJAP.50.07HB05(Journal) ========================================================== Created: 2023-02-01 12:48:26 ConfID: 6716483 CauseID: 1560040830 OtherID: 1363321308 JT: Japanese Journal of Applied Physics MD: Urakawa,51,8s2,802,2012,Robust Adjacent Track Servo System with Linear Positioning Method DOI: 10.1143/JJAP.51.08JA02(Journal) (6716483-N) DOI: 10.7567/JJAP.51.08JA02(Journal) ========================================================== Created: 2023-01-05 12:03:39 ConfID: 6691904 CauseID: 1557136865 OtherID: 1363323561 JT: Japanese Journal of Applied Physics MD: Kohama,50,4s,403,2011,Structure Analyses of Ti-Based Self-Formed Barrier Layers DOI: 10.1143/JJAP.50.04DB03(Journal) (6691904-N) DOI: 10.7567/JJAP.50.04DB03(Journal) ========================================================== Created: 2023-02-01 12:48:24 ConfID: 6716480 CauseID: 1560040827 OtherID: 1363320913 JT: Japanese Journal of Applied Physics MD: Doh,51,6s,604,2012,Effect on Critical Dimension Performance for Carbon Contamination of Extreme Ultraviolet Mask Using Coherent Scattering Microscopy and In-situ Contamination System DOI: 10.1143/JJAP.51.06FB04(Journal) (6716480-N) DOI: 10.7567/JJAP.51.06FB04(Journal) ========================================================== Created: 2023-01-05 12:03:35 ConfID: 6691905 CauseID: 1557136866 OtherID: 1363323588 JT: Japanese Journal of Applied Physics MD: Chien,50,4s,411,2011,A Novel Ni/WOX/W Resistive Random Access Memory with Excellent Retention and Low Switching Current DOI: 10.1143/JJAP.50.04DD11(Journal) (6691905-N) DOI: 10.7567/JJAP.50.04DD11(Journal) ========================================================== Created: 2023-02-01 12:48:25 ConfID: 6716481 CauseID: 1560040828 OtherID: 1363321138 JT: Japanese Journal of Applied Physics MD: Matsuda,51,7s,714,2012,A Finite-Difference Time-Domain Technique for Nonlinear Elastic Media and Its Application to Nonlinear Lamb Wave Propagation DOI: 10.1143/JJAP.51.07GB14(Journal) (6716481-N) DOI: 10.7567/JJAP.51.07GB14(Journal) ========================================================== Created: 2023-01-05 12:03:43 ConfID: 6691918 CauseID: 1557136879 OtherID: 1363323640 JT: Japanese Journal of Applied Physics MD: Yamamoto,50,4s,404,2011,Developing a Half-Cladding Semiconductor Photonic Device Structure for Surface Transmission of Light Waves DOI: 10.1143/JJAP.50.04DG04(Journal) (6691918-N) DOI: 10.7567/JJAP.50.04DG04(Journal) ========================================================== Created: 2023-02-01 12:48:39 ConfID: 6716494 CauseID: 1560040852 OtherID: 1363320934 JT: Japanese Journal of Applied Physics MD: Nishijima,51,6s,620,2012,In-situ Observation of Current-Pulse-Induced Curling of Graphene Edges and Carbon-Cages Production DOI: 10.1143/JJAP.51.06FD20(Journal) (6716494-N) DOI: 10.7567/JJAP.51.06FD20(Journal) ========================================================== Created: 2023-01-05 12:03:44 ConfID: 6691919 CauseID: 1557136880 OtherID: 1363323625 JT: Japanese Journal of Applied Physics MD: Ku,50,4s,407,2011,Epitaxial Lateral Overgrowth of Gallium Nitride for Embedding the Micro-Mirror Array DOI: 10.1143/JJAP.50.04DG07(Journal) (6691919-N) DOI: 10.7567/JJAP.50.04DG07(Journal) ========================================================== Created: 2023-02-01 12:48:36 ConfID: 6716495 CauseID: 1560040855 OtherID: 1363320708 JT: Japanese Journal of Applied Physics MD: Rahaman,51,4s,411,2012,Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte DOI: 10.1143/JJAP.51.04DD11(Journal) (6716495-N) DOI: 10.7567/JJAP.51.04DD11(Journal) ========================================================== Created: 2023-01-05 12:03:42 ConfID: 6691916 CauseID: 1557136877 OtherID: 1363323596 JT: Japanese Journal of Applied Physics MD: Kim,50,4s,414,2011,Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO2 Resistive Material Depending on the Thickness of Ti DOI: 10.1143/JJAP.50.04DD14(Journal) (6691916-N) DOI: 10.7567/JJAP.50.04DD14(Journal) ========================================================== Created: 2023-02-01 12:48:34 ConfID: 6716492 CauseID: 1560040849 OtherID: 1363320828 JT: Japanese Journal of Applied Physics MD: Shimizu,51,5s,502,2012,Atomic Layer Deposited Co(W) Film as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects DOI: 10.1143/JJAP.51.05EB02(Journal) (6716492-N) DOI: 10.7567/JJAP.51.05EB02(Journal) ========================================================== Created: 2023-01-05 12:03:43 ConfID: 6691917 CauseID: 1557136878 OtherID: 1363323622 JT: Japanese Journal of Applied Physics MD: Bidzinski,50,4s,408,2011,Impact of Interface States and Bulk Carrier Lifetime on Photocapacitance of Metal/Insulator/GaN Structure for Ultraviolet Light Detection DOI: 10.1143/JJAP.50.04DF08(Journal) (6691917-N) DOI: 10.7567/JJAP.50.04DF08(Journal) ========================================================== Created: 2023-02-01 12:48:38 ConfID: 6716493 CauseID: 1560040850 OtherID: 1363320694 JT: Japanese Journal of Applied Physics MD: Shi,51,4s,408,2012,Board-Level Solder Joint Reliability of Edge- and Corner-Bonded Lead-Free Chip Scale Package Assemblies Subjected to Thermal Cycling DOI: 10.1143/JJAP.51.04DB08(Journal) (6716493-N) DOI: 10.7567/JJAP.51.04DB08(Journal) ========================================================== Created: 2023-01-05 12:13:02 ConfID: 6691914 CauseID: 1557138176 OtherID: 1363324406 JT: Japanese Journal of Applied Physics MD: Denisova,50,8s1,803,2011,Spatial Diagnostics of Hg/Ar and Hg/Xe Discharge Lamps by Means of Tomography DOI: 10.1143/JJAP.50.08JB03(Journal) (6691914-N) DOI: 10.7567/JJAP.50.08JB03(Journal) ========================================================== Created: 2023-02-01 12:48:30 ConfID: 6716490 CauseID: 1560040842 OtherID: 1363321334 JT: Japanese Journal of Applied Physics MD: Shiraishi,51,8s3,801,2012,Electrically-Generated Pure Spin Current in Graphene DOI: 10.1143/JJAP.51.08KA01(Journal) (6716490-N) DOI: 10.7567/JJAP.51.08KA01(Journal) ========================================================== Created: 2023-01-05 12:03:42 ConfID: 6691915 CauseID: 1557136876 OtherID: 1363323586 JT: Japanese Journal of Applied Physics MD: Okamoto,50,4s,413,2011,Improved Resistive Switching Characteristics of NiO Resistance Random-Access Memory Using Post-Plasma-Oxidation Process DOI: 10.1143/JJAP.50.04DD13(Journal) (6691915-N) DOI: 10.7567/JJAP.50.04DD13(Journal) ========================================================== Created: 2023-02-01 12:48:31 ConfID: 6716491 CauseID: 1560040844 OtherID: 1363320965 JT: Japanese Journal of Applied Physics MD: Park,51,6s,608,2012,Channel Recessed One Transistor Dynamic Random Access Memory with SiO2/Si3N4/SiO2 Gate Dielectric DOI: 10.1143/JJAP.51.06FE08(Journal) (6716491-N) DOI: 10.7567/JJAP.51.06FE08(Journal) ========================================================== Created: 2023-01-05 12:13:02 ConfID: 6691912 CauseID: 1557138175 OtherID: 1363324316 JT: Japanese Journal of Applied Physics MD: Hahn,50,7s,703,2011,Measurement of Interference Structures of Ship-Radiated Noise in Shallow Water with Rock and Sand Bottom DOI: 10.1143/JJAP.50.07HG03(Journal) (6691912-N) DOI: 10.7567/JJAP.50.07HG03(Journal) ========================================================== Created: 2023-02-01 12:48:29 ConfID: 6716488 CauseID: 1560040837 OtherID: 1363320697 JT: Japanese Journal of Applied Physics MD: Inatsuka,51,4s,402,2012,Recovery Characteristics of Anomalous Stress-Induced Leakage Current of 5.6 nm Oxide Films DOI: 10.1143/JJAP.51.04DC02(Journal) (6716488-N) DOI: 10.7567/JJAP.51.04DC02(Journal) ========================================================== Created: 2023-01-05 12:03:41 ConfID: 6691913 CauseID: 1557136874 OtherID: 1363323601 JT: Japanese Journal of Applied Physics MD: Kuo,50,4s,420,2011,Investigation of Stress Memorization Process on Low-Frequency Noise Performance for Strained Si n-Type Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.50.04DC20(Journal) (6691913-N) DOI: 10.7567/JJAP.50.04DC20(Journal) ========================================================== Created: 2023-02-01 12:48:29 ConfID: 6716489 CauseID: 1560040836 OtherID: 1363320978 JT: Japanese Journal of Applied Physics MD: Onoue,51,6s,609,2012,Simple Fabrication of Nickel Micropatterning under Ambient Condition: Use of Pen-Type Nanolithography and Electroless Plating DOI: 10.1143/JJAP.51.06FF09(Journal) (6716489-N) DOI: 10.7567/JJAP.51.06FF09(Journal) ========================================================== Created: 2023-01-05 12:13:08 ConfID: 6691926 CauseID: 1557138189 OtherID: 1363324273 JT: Japanese Journal of Applied Physics MD: Kim,50,7s,719,2011,Dispersion Effect of Nanoparticle According to Ultrasound Exposure Using Focused Ultrasound Field DOI: 10.1143/JJAP.50.07HE19(Journal) (6691926-N) DOI: 10.7567/JJAP.50.07HE19(Journal) ========================================================== Created: 2023-02-01 12:48:40 ConfID: 6716502 CauseID: 1560040867 OtherID: 1363320956 JT: Japanese Journal of Applied Physics MD: Anzai,51,6s,605,2012,Fabrication of Stacked Organic Electroluminescence Devices with a Combination of Spin Coating and Electrospray Deposition DOI: 10.1143/JJAP.51.06FE05(Journal) (6716502-N) DOI: 10.7567/JJAP.51.06FE05(Journal) ========================================================== Created: 2023-01-05 12:03:51 ConfID: 6691927 CauseID: 1557136896 OtherID: 1363323572 JT: Japanese Journal of Applied Physics MD: Lucovsky,50,4s,409,2011,Multiplet Theory for Conduction Band Edge and O-Vacancy Defect States in SiO2, Si3N4, and Si Oxynitride Alloy Thin Films DOI: 10.1143/JJAP.50.04DC09(Journal) (6691927-N) DOI: 10.7567/JJAP.50.04DC09(Journal) ========================================================== Created: 2023-02-01 12:48:41 ConfID: 6716503 CauseID: 1560040868 OtherID: 1363320763 JT: Japanese Journal of Applied Physics MD: Nakamura,51,4s,403,2012,Direct Growth Properties of Graphene Layers on Sapphire Substrate by Alcohol-Chemical Vapor Deposition DOI: 10.1143/JJAP.51.04DN03(Journal) (6716503-N) DOI: 10.7567/JJAP.51.04DN03(Journal) ========================================================== Created: 2023-01-05 12:03:50 ConfID: 6691924 CauseID: 1557136894 OtherID: 1363323651 JT: Japanese Journal of Applied Physics MD: Akahane,50,4s,405,2011,Energy Transfer in Multi-Stacked InAs Quantum Dots DOI: 10.1143/JJAP.50.04DH05(Journal) (6691924-N) DOI: 10.7567/JJAP.50.04DH05(Journal) ========================================================== Created: 2023-02-01 12:48:43 ConfID: 6716500 CauseID: 1560040863 OtherID: 1363320955 JT: Japanese Journal of Applied Physics MD: Lee,51,6s,613,2012,Speed Enhancement of WSi2 Nanocrystal Memory with Barrier-Engineered Si3N4/HfAlO Tunnel Layer DOI: 10.1143/JJAP.51.06FE13(Journal) (6716500-N) DOI: 10.7567/JJAP.51.06FE13(Journal) ========================================================== Created: 2023-01-05 12:03:50 ConfID: 6691925 CauseID: 1557136895 OtherID: 1363323600 JT: Japanese Journal of Applied Physics MD: Muraguchi,50,4s,404,2011,Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell DOI: 10.1143/JJAP.50.04DD04(Journal) (6691925-N) DOI: 10.7567/JJAP.50.04DD04(Journal) ========================================================== Created: 2023-02-01 12:48:41 ConfID: 6716501 CauseID: 1560040869 OtherID: 1363320950 JT: Japanese Journal of Applied Physics MD: Ueki,51,6s,628,2012,In-situ Observation of Surface Graphitization of Gallium Droplet and Concentration of Carbon in Liquid Gallium DOI: 10.1143/JJAP.51.06FD28(Journal) (6716501-N) DOI: 10.7567/JJAP.51.06FD28(Journal) ========================================================== Created: 2023-01-05 12:03:48 ConfID: 6691922 CauseID: 1557136886 OtherID: 1363323567 JT: Japanese Journal of Applied Physics MD: Shima,50,4s,406,2011,Metal Schottky Source/Drain Technology for Ultrathin Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors DOI: 10.1143/JJAP.50.04DC06(Journal) (6691922-N) DOI: 10.7567/JJAP.50.04DC06(Journal) ========================================================== Created: 2023-02-01 12:48:40 ConfID: 6716498 CauseID: 1560040862 OtherID: 1363320949 JT: Japanese Journal of Applied Physics MD: Kawabe,51,6s,625,2012,Temperature Dependent Resistance of Multi-Wall Carbon Nanotube DOI: 10.1143/JJAP.51.06FD25(Journal) (6716498-N) DOI: 10.7567/JJAP.51.06FD25(Journal) ========================================================== Created: 2023-01-05 12:03:49 ConfID: 6691923 CauseID: 1557136887 OtherID: 1363323606 JT: Japanese Journal of Applied Physics MD: Gong,50,4s,401,2011,Source/Drain Engineering for In0.7Ga0.3As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction DOI: 10.1143/JJAP.50.04DF01(Journal) (6691923-N) DOI: 10.7567/JJAP.50.04DF01(Journal) ========================================================== Created: 2023-02-01 12:48:43 ConfID: 6716499 CauseID: 1560040864 OtherID: 1363320724 JT: Japanese Journal of Applied Physics MD: Zhou,51,4s,402,2012,Schottky Source/Drain InAlN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance DOI: 10.1143/JJAP.51.04DF02(Journal) (6716499-N) DOI: 10.7567/JJAP.51.04DF02(Journal) ========================================================== Created: 2023-01-05 12:03:46 ConfID: 6691920 CauseID: 1557136883 OtherID: 1363323618 JT: Japanese Journal of Applied Physics MD: Fukuda,50,4s,409,2011,Non-volatile Random Access Memory and NAND Flash Memory Integrated Solid-State Drives with Adaptive Codeword Error Correcting Code for 3.6 Times Acceptable Raw Bit Error Rate Enhancement and 97% Power Reduction DOI: 10.1143/JJAP.50.04DE09(Journal) (6691920-N) DOI: 10.7567/JJAP.50.04DE09(Journal) ========================================================== Created: 2023-02-01 12:48:36 ConfID: 6716496 CauseID: 1560040856 OtherID: 1363320947 JT: Japanese Journal of Applied Physics MD: Lee,51,6s,617,2012,Graphene Converted from the Photoresist Material on Polycrystalline Nickel Substrate DOI: 10.1143/JJAP.51.06FD17(Journal) (6716496-N) DOI: 10.7567/JJAP.51.06FD17(Journal) ========================================================== Created: 2023-01-05 12:03:47 ConfID: 6691921 CauseID: 1557136884 OtherID: 1363323592 JT: Japanese Journal of Applied Physics MD: Huang,50,4s,421,2011,Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.50.04DC21(Journal) (6691921-N) DOI: 10.7567/JJAP.50.04DC21(Journal) ========================================================== Created: 2023-02-01 12:48:37 ConfID: 6716497 CauseID: 1560040857 OtherID: 1363320919 JT: Japanese Journal of Applied Physics MD: Okai,51,6s,611,2012,Study on Image Drift Induced by Charging during Observation by Scanning Electron Microscope DOI: 10.1143/JJAP.51.06FB11(Journal) (6716497-N) DOI: 10.7567/JJAP.51.06FB11(Journal) ========================================================== Created: 2023-01-05 12:03:54 ConfID: 6691934 CauseID: 1557136901 OtherID: 1363323580 JT: Japanese Journal of Applied Physics MD: Yang,50,4s,411,2011,Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors DOI: 10.1143/JJAP.50.04DC11(Journal) (6691934-N) DOI: 10.7567/JJAP.50.04DC11(Journal) ========================================================== Created: 2023-02-01 12:48:54 ConfID: 6716510 CauseID: 1560040885 OtherID: 1363321005 JT: Japanese Journal of Applied Physics MD: Kim,51,6s,607,2012,Measurement of Nonlinear Mechanical Properties of Surfactant-Added Poly(dimethylsiloxane) DOI: 10.1143/JJAP.51.06FK07(Journal) (6716510-N) DOI: 10.7567/JJAP.51.06FK07(Journal) ========================================================== Created: 2023-01-05 12:03:54 ConfID: 6691935 CauseID: 1557136902 OtherID: 1363323570 JT: Japanese Journal of Applied Physics MD: Amakawa,50,4s,412,2011,Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.50.04DC12(Journal) (6691935-N) DOI: 10.7567/JJAP.50.04DC12(Journal) ========================================================== Created: 2023-02-01 12:48:52 ConfID: 6716511 CauseID: 1560040890 OtherID: 1363321001 JT: Japanese Journal of Applied Physics MD: Kawakita,51,6s,611,2012,Fast Formation of Conductive Material by Simultaneous Chemical Process for Infilling Through-Silicon Via DOI: 10.1143/JJAP.51.06FG11(Journal) (6716511-N) DOI: 10.7567/JJAP.51.06FG11(Journal) ========================================================== Created: 2023-01-05 12:13:16 ConfID: 6691932 CauseID: 1557138213 OtherID: 1363324385 JT: Japanese Journal of Applied Physics MD: Yamawaki,50,8r,86301,2011,Novel System for Potential Nondestructive Material Inspection Using Positron Annihilation Lifetime Spectroscopy DOI: 10.1143/JJAP.50.086301(Journal) (6691932-N) DOI: 10.7567/JJAP.50.086301(Journal) ========================================================== Created: 2023-02-01 12:48:50 ConfID: 6716508 CauseID: 1560040883 OtherID: 1363320863 JT: Japanese Journal of Applied Physics MD: Kim,51,5s,506,2012,Effect of Interfacial Microstructures on the Bonding Strength of Sn–3.0Ag–0.5Cu Pb-Free Solder Bump DOI: 10.1143/JJAP.51.05EE06(Journal) (6716508-N) DOI: 10.7567/JJAP.51.05EE06(Journal) ========================================================== Created: 2023-01-05 12:03:53 ConfID: 6691933 CauseID: 1557136900 OtherID: 1363323608 JT: Japanese Journal of Applied Physics MD: Freedsman,50,4s,403,2011,Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors DOI: 10.1143/JJAP.50.04DF03(Journal) (6691933-N) DOI: 10.7567/JJAP.50.04DF03(Journal) ========================================================== Created: 2023-02-01 12:48:53 ConfID: 6716509 CauseID: 1560040884 OtherID: 1363320939 JT: Japanese Journal of Applied Physics MD: Murasaki,51,6s,624,2012,Evaluation of Graphene Thin Films by Surface Plasmon Resonance DOI: 10.1143/JJAP.51.06FD24(Journal) (6716509-N) DOI: 10.7567/JJAP.51.06FD24(Journal) ========================================================== Created: 2023-01-05 12:03:52 ConfID: 6691930 CauseID: 1557136899 OtherID: 1363323612 JT: Japanese Journal of Applied Physics MD: Ujita,50,4s,404,2011,A 26 GHz Transceiver Chipset for Short Range Radar Using Post-Passivation Interconnection DOI: 10.1143/JJAP.50.04DE04(Journal) (6691930-N) DOI: 10.7567/JJAP.50.04DE04(Journal) ========================================================== Created: 2023-02-01 12:48:47 ConfID: 6716506 CauseID: 1560040879 OtherID: 1363320925 JT: Japanese Journal of Applied Physics MD: Yun,51,6s,614,2012,Configuration Dependency of Attached Epoxy Groups on Graphene Oxide Reduction: A Molecular Dynamics Simulation DOI: 10.1143/JJAP.51.06FD14(Journal) (6716506-N) DOI: 10.7567/JJAP.51.06FD14(Journal) ========================================================== Created: 2023-01-05 12:13:10 ConfID: 6691931 CauseID: 1557138196 OtherID: 1363324407 JT: Japanese Journal of Applied Physics MD: Zhang,50,8r,89202,2011,Erratum: “Vertically Aligned Single-Crystal ZnO Nanotubes Grown on γ-LiAlO2 (100) Substrate by Metalorganic Chemical Vapor Deposition” DOI: 10.1143/JJAP.50.089202(Journal) (6691931-N) DOI: 10.7567/JJAP.50.089202(Journal) ========================================================== Created: 2023-02-01 12:48:47 ConfID: 6716507 CauseID: 1560040880 OtherID: 1363320686 JT: Japanese Journal of Applied Physics MD: Kim,51,4s,404,2012,Advanced 10 nm Width Silicon-on-Insulator Tri-Gate Transistors with NO Annealing of Gate Oxide Using Optimized Novel Silicon-on-Insulator Realization Technology DOI: 10.1143/JJAP.51.04DC04(Journal) (6716507-N) DOI: 10.7567/JJAP.51.04DC04(Journal) ========================================================== Created: 2023-01-05 12:03:51 ConfID: 6691928 CauseID: 1557136897 OtherID: 1363323590 JT: Japanese Journal of Applied Physics MD: Yamguchi,50,4s,405,2011,Atomistic Design of Guiding Principles for High Quality Metal–Oxide–Nitride–Oxide–Semiconductor Memories: First Principles Study of H and O Incorporation Effects for N Vacancies in SiN Charge Trap Layers DOI: 10.1143/JJAP.50.04DD05(Journal) (6691928-N) DOI: 10.7567/JJAP.50.04DD05(Journal) ========================================================== Created: 2023-02-01 12:48:42 ConfID: 6716504 CauseID: 1560040871 OtherID: 1363320691 JT: Japanese Journal of Applied Physics MD: Kishii,51,4s,407,2012,Mn2O3 Slurry Reuse by Circulation Achieving High Constant Removal Rate DOI: 10.1143/JJAP.51.04DB07(Journal) (6716504-N) DOI: 10.7567/JJAP.51.04DB07(Journal) ========================================================== Created: 2023-01-05 12:03:52 ConfID: 6691929 CauseID: 1557136898 OtherID: 1363323599 JT: Japanese Journal of Applied Physics MD: Fujiki,50,4s,406,2011,Dynamics of the Charge Centroid in Metal–Oxide–Nitride–Oxide–Silicon Memory Cells during Avalanche Injection and Fowler–Nordheim Injection Based on Incremental-Step-Pulse Programming DOI: 10.1143/JJAP.50.04DD06(Journal) (6691929-N) DOI: 10.7567/JJAP.50.04DD06(Journal) ========================================================== Created: 2023-02-01 12:48:48 ConfID: 6716505 CauseID: 1560040874 OtherID: 1363320938 JT: Japanese Journal of Applied Physics MD: Yamagiwa,51,6s,619,2012,One-Step Liquid-Phase Synthesis of Carbon Nanotubes: Effects of Substrate Materials on Morphology of Carbon Nanotubes DOI: 10.1143/JJAP.51.06FD19(Journal) (6716505-N) DOI: 10.7567/JJAP.51.06FD19(Journal) ========================================================== Created: 2023-01-05 12:10:51 ConfID: 6691878 CauseID: 1557137831 OtherID: 1363323400 JT: Japanese Journal of Applied Physics MD: Kung,50,3r,32503,2011,Non-degenerated Four-Wave Mixing Generated Power Ratio between Co-Propagated Pump Fabry–Perot Modes and Probe Signal in a Non-zero Dispersion Shifted Fiber DOI: 10.1143/JJAP.50.032503(Journal) (6691878-N) DOI: 10.7567/JJAP.50.032503(Journal) ========================================================== Created: 2023-02-01 12:47:58 ConfID: 6716454 CauseID: 1560040769 OtherID: 1363320742 JT: Japanese Journal of Applied Physics MD: Bousslama,51,4s,413,2012,Structural and Luminescence Properties of Highly Crystalline ZnO Nanoparticles Prepared by Sol–Gel Method DOI: 10.1143/JJAP.51.04DG13(Journal) (6716454-N) DOI: 10.7567/JJAP.51.04DG13(Journal) ========================================================== Created: 2023-01-05 12:11:30 ConfID: 6691879 CauseID: 1557137937 OtherID: 1363324134 JT: Japanese Journal of Applied Physics MD: Svintsov,50,7r,70112,2011,Effect of “Mexican Hat” on Graphene Bilayer Field-Effect Transistor Characteristics DOI: 10.1143/JJAP.50.070112(Journal) (6691879-N) DOI: 10.7567/JJAP.50.070112(Journal) ========================================================== Created: 2023-02-01 12:47:59 ConfID: 6716455 CauseID: 1560040771 OtherID: 1363320760 JT: Japanese Journal of Applied Physics MD: Morales,51,4s,408,2012,Structural and Molecular Changes of C60 Thin Films with Incorporated Magnesium Atoms DOI: 10.1143/JJAP.51.04DK08(Journal) (6716455-N) DOI: 10.7567/JJAP.51.04DK08(Journal) ========================================================== Created: 2023-01-05 12:10:46 ConfID: 6691876 CauseID: 1557137815 OtherID: 1363323116 JT: Japanese Journal of Applied Physics MD: Sugiyama,50,1s1,103,2011,High-Temperature Operation of Normally Off-Mode AlGaN/GaN Heterostructure Field-Effect Transistors with p-GaN Gate DOI: 10.1143/JJAP.50.01AD03(Journal) (6691876-N) DOI: 10.7567/JJAP.50.01AD03(Journal) ========================================================== Created: 2023-02-01 12:47:56 ConfID: 6716452 CauseID: 1560040764 OtherID: 1363320918 JT: Japanese Journal of Applied Physics MD: Kada,51,6s,607,2012,Ion-Beam-Induced Luminescence Analysis as Diagnostic Tool for Microstructure Patterning on Diamond by Proton Beam Writing DOI: 10.1143/JJAP.51.06FB07(Journal) (6716452-N) DOI: 10.7567/JJAP.51.06FB07(Journal) ========================================================== Created: 2023-01-05 12:03:24 ConfID: 6691877 CauseID: 1557136840 OtherID: 1363323511 JT: Japanese Journal of Applied Physics MD: Escaño,50,4r,45101,2011,Molecular and Electronic Tuning of Si/Carbon Nanotube Hybrid System DOI: 10.1143/JJAP.50.045101(Journal) (6691877-N) DOI: 10.7567/JJAP.50.045101(Journal) ========================================================== Created: 2023-02-01 12:47:58 ConfID: 6716453 CauseID: 1560040768 OtherID: 1363320941 JT: Japanese Journal of Applied Physics MD: Takahashi,51,6s,626,2012,Electric Field Enhancement by Laser Light Focused at Electrode Edges for Controlled Positioning of Carbon Nanotubes DOI: 10.1143/JJAP.51.06FD26(Journal) (6716453-N) DOI: 10.7567/JJAP.51.06FD26(Journal) ========================================================== Created: 2023-01-05 12:03:23 ConfID: 6691874 CauseID: 1557136839 OtherID: 1363323603 JT: Japanese Journal of Applied Physics MD: Liu,50,4s,419,2011,Effects of Quantum Confinement on Electrical Characteristics of 12-nm Silicon-on-Insulator Fin Field-Effect Transistors by Quantum Transport Analysis DOI: 10.1143/JJAP.50.04DC19(Journal) (6691874-N) DOI: 10.7567/JJAP.50.04DC19(Journal) ========================================================== Created: 2023-02-01 12:47:55 ConfID: 6716450 CauseID: 1560040763 OtherID: 1363320907 JT: Japanese Journal of Applied Physics MD: Harada,51,6s,608,2012,Defect Characterization of an Extreme-Ultraviolet Mask Using a Coherent Extreme-Ultraviolet Scatterometry Microscope DOI: 10.1143/JJAP.51.06FB08(Journal) (6716450-N) DOI: 10.7567/JJAP.51.06FB08(Journal) ========================================================== Created: 2023-01-05 12:10:36 ConfID: 6691875 CauseID: 1557137795 OtherID: 1363323127 JT: Japanese Journal of Applied Physics MD: Tsai,50,1s1,105,2011,Improvement in the Light Output Power of GaN-Based Light Emitting Diodes by One-Step Current Blocking Design DOI: 10.1143/JJAP.50.01AD05(Journal) (6691875-N) DOI: 10.7567/JJAP.50.01AD05(Journal) ========================================================== Created: 2023-02-01 12:47:57 ConfID: 6716451 CauseID: 1560040766 OtherID: 1363320884 JT: Japanese Journal of Applied Physics MD: Wakayama,51,6s,601,2012,Potential of Directed- and Self-Assembled Molecular Nanowires for Optoelectronic Functional Devices DOI: 10.1143/JJAP.51.06FA01(Journal) (6716451-N) DOI: 10.7567/JJAP.51.06FA01(Journal) ========================================================== Created: 2023-01-05 12:10:21 ConfID: 6691872 CauseID: 1557137760 OtherID: 1363324250 JT: Japanese Journal of Applied Physics MD: Kadota,50,7s,707,2011,Magnetic Sensor Based on Surface Acoustic Wave Resonators DOI: 10.1143/JJAP.50.07HD07(Journal) (6691872-N) DOI: 10.7567/JJAP.50.07HD07(Journal) ========================================================== Created: 2023-02-01 12:47:54 ConfID: 6716448 CauseID: 1560040760 OtherID: 1363320753 JT: Japanese Journal of Applied Physics MD: Nakanishi,51,4s,403,2012,6,13-Bis(triisopropylsilylethynyl) Pentacene Organic Field-Effect Transistors Utilizing Poly(p-silsesquioxane) Insulating Layers with Various Ratios of Phenol Groups DOI: 10.1143/JJAP.51.04DK03(Journal) (6716448-N) DOI: 10.7567/JJAP.51.04DK03(Journal) ========================================================== Created: 2023-01-05 12:10:36 ConfID: 6691873 CauseID: 1557137794 OtherID: 1363324245 JT: Japanese Journal of Applied Physics MD: Kawashima,50,7s,714,2011,Harmonic Imaging of Plastic Deformation in Thin Metal Plates Using Nonlinear Ultrasonic Method DOI: 10.1143/JJAP.50.07HC14(Journal) (6691873-N) DOI: 10.7567/JJAP.50.07HC14(Journal) ========================================================== Created: 2023-02-01 12:47:54 ConfID: 6716449 CauseID: 1560040759 OtherID: 1363320911 JT: Japanese Journal of Applied Physics MD: Nakasuji,51,6s,609,2012,Development of Coherent Extreme-Ultraviolet Scatterometry Microscope with High-Order Harmonic Generation Source for Extreme-Ultraviolet Mask Inspection and Metrology DOI: 10.1143/JJAP.51.06FB09(Journal) (6716449-N) DOI: 10.7567/JJAP.51.06FB09(Journal) ========================================================== Created: 2023-01-05 12:03:25 ConfID: 6691886 CauseID: 1557136844 OtherID: 1363323535 JT: Japanese Journal of Applied Physics MD: Terai,50,4r,46503,2011,Double Patterning Using Multilayer Hard Mask Process with Perhydropolysilazane DOI: 10.1143/JJAP.50.046503(Journal) (6691886-N) DOI: 10.7567/JJAP.50.046503(Journal) ========================================================== Created: 2023-02-01 12:48:08 ConfID: 6716462 CauseID: 1560040787 OtherID: 1363320835 JT: Japanese Journal of Applied Physics MD: Mitsumori,51,5s,503,2012,Barrier Integrity of Electroless Diffusion Barriers and Organosilane Monolayer against Copper Diffusion under Bias Temperature Stress DOI: 10.1143/JJAP.51.05EB03(Journal) (6716462-N) DOI: 10.7567/JJAP.51.05EB03(Journal) ========================================================== Created: 2023-01-05 12:03:26 ConfID: 6691887 CauseID: 1557136845 OtherID: 1363323529 JT: Japanese Journal of Applied Physics MD: Kaneshima,50,4r,47301,2011,Analysis of High-Intensity Focused Ultrasound Source Using Time Reversal: Effect of Lamb-Like Waves DOI: 10.1143/JJAP.50.047301(Journal) (6691887-N) DOI: 10.7567/JJAP.50.047301(Journal) ========================================================== Created: 2023-02-01 12:48:09 ConfID: 6716463 CauseID: 1560040789 OtherID: 1363321309 JT: Japanese Journal of Applied Physics MD: Okubo,51,8s2,802,2012,Measurements of Nonlinear Mark Edge Shift for Phase Change Optical Disk Systems DOI: 10.1143/JJAP.51.08JC02(Journal) (6716463-N) DOI: 10.7567/JJAP.51.08JC02(Journal) ========================================================== Created: 2023-01-05 12:12:02 ConfID: 6691884 CauseID: 1557138024 OtherID: 1363324405 JT: Japanese Journal of Applied Physics MD: Osabe,50,8r,88005,2011,Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding DOI: 10.1143/JJAP.50.088005(Journal) (6691884-N) DOI: 10.7567/JJAP.50.088005(Journal) ========================================================== Created: 2023-02-01 12:48:04 ConfID: 6716460 CauseID: 1560040783 OtherID: 1363320673 JT: Japanese Journal of Applied Physics MD: Takei,51,4s,404,2012,Channel Strain Measurement in 32-nm-Node Complementary Metal–Oxide–Semiconductor Field-Effect Transistor by Raman Spectroscopy DOI: 10.1143/JJAP.51.04DA04(Journal) (6716460-N) DOI: 10.7567/JJAP.51.04DA04(Journal) ========================================================== Created: 2023-01-05 12:12:07 ConfID: 6691885 CauseID: 1557138039 OtherID: 1363324216 JT: Japanese Journal of Applied Physics MD: Yamamoto,50,7r,78003,2011,Fabrication of Two-Depth Apodized Grating by Selective Etching of InP in CH4/H2 Reactive Ion Etching DOI: 10.1143/JJAP.50.078003(Journal) (6691885-N) DOI: 10.7567/JJAP.50.078003(Journal) ========================================================== Created: 2023-02-01 12:47:57 ConfID: 6716461 CauseID: 1560040767 OtherID: 1363320910 JT: Japanese Journal of Applied Physics MD: Mohammad,51,6s,605,2012,Study of Development Processes for ZEP-520 as a High-Resolution Positive and Negative Tone Electron Beam Lithography Resist DOI: 10.1143/JJAP.51.06FC05(Journal) (6716461-N) DOI: 10.7567/JJAP.51.06FC05(Journal) ========================================================== Created: 2023-01-05 12:11:51 ConfID: 6691882 CauseID: 1557137996 OtherID: 1363323483 JT: Japanese Journal of Applied Physics MD: Suda,50,3r,38002,2011,Origin of Etch Hillocks Formed on On-Axis SiC(0001) Surfaces by Molten KOH Etching DOI: 10.1143/JJAP.50.038002(Journal) (6691882-N) DOI: 10.7567/JJAP.50.038002(Journal) ========================================================== Created: 2023-02-01 12:47:43 ConfID: 6716458 CauseID: 1560040735 OtherID: 1363320945 JT: Japanese Journal of Applied Physics MD: Lee,51,6s,603,2012,Characteristics of Gate-All-Around Hetero-Gate-Dielectric Tunneling Field-Effect Transistors DOI: 10.1143/JJAP.51.06FE03(Journal) (6716458-N) DOI: 10.7567/JJAP.51.06FE03(Journal) ========================================================== Created: 2023-01-05 12:12:00 ConfID: 6691883 CauseID: 1557138015 OtherID: 1363324326 JT: Japanese Journal of Applied Physics MD: Higa,50,8r,80205,2011,Large Kink Characteristics in Light Output of Tunnel Injection Quantum Well Lasers DOI: 10.1143/JJAP.50.080205(Journal) (6691883-N) DOI: 10.7567/JJAP.50.080205(Journal) ========================================================== Created: 2023-02-01 12:48:03 ConfID: 6716459 CauseID: 1560040781 OtherID: 1363320924 JT: Japanese Journal of Applied Physics MD: Negishi,51,6s,603,2012,Carrier Transport Properties of the Field Effect Transistors with Graphene Channel Prepared by Chemical Vapor Deposition DOI: 10.1143/JJAP.51.06FD03(Journal) (6716459-N) DOI: 10.7567/JJAP.51.06FD03(Journal) ========================================================== Created: 2023-01-05 12:11:36 ConfID: 6691880 CauseID: 1557137958 OtherID: 1363323445 JT: Japanese Journal of Applied Physics MD: Sakurai,50,3r,36601,2011,Oxidization Characteristics of Standard Platinum Resistance Thermometers DOI: 10.1143/JJAP.50.036601(Journal) (6691880-N) DOI: 10.7567/JJAP.50.036601(Journal) ========================================================== Created: 2023-02-01 12:48:00 ConfID: 6716456 CauseID: 1560040776 OtherID: 1363320862 JT: Japanese Journal of Applied Physics MD: Shirane,51,5s,502,2012,Planar Solenoidal Inductor in Radio Frequency Micro-Electro-Mechanical Systems Technology for Variable Inductor with Wide Tunable Range and High Quality Factor DOI: 10.1143/JJAP.51.05EE02(Journal) (6716456-N) DOI: 10.7567/JJAP.51.05EE02(Journal) ========================================================== Created: 2023-01-05 12:11:54 ConfID: 6691881 CauseID: 1557137993 OtherID: 1363322918 JT: Japanese Journal of Applied Physics MD: Lin,50,11r,110210,2011,Additional-Body Effects in a Self-Aligned Deca-Nanometer Ultrathin-Body and Buried Oxide Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor: A Three-Dimensional Simulation Study DOI: 10.1143/JJAP.50.110210(Journal) (6691881-N) DOI: 10.7567/JJAP.50.110210(Journal) ========================================================== Created: 2023-02-01 12:48:01 ConfID: 6716457 CauseID: 1560040778 OtherID: 1363320095 JT: Japanese Journal of Applied Physics MD: Yamasaki,51,12r,126101,2012,Pressure Dependences of Gas Temperature and Electron Density in Microhollow Cathode Discharges in He and He+H2O Gases DOI: 10.1143/JJAP.51.126101(Journal) (6716457-N) DOI: 10.7567/JJAP.51.126101(Journal) ========================================================== Created: 2023-01-05 12:03:30 ConfID: 6691894 CauseID: 1557136852 OtherID: 1363323593 JT: Japanese Journal of Applied Physics MD: Li,50,4s,422,2011,Nanosized-Metal-Grain-Induced Characteristic Fluctuation in 16 nm Complementary Metal–Oxide–Semiconductor Devices and Digital Circuits DOI: 10.1143/JJAP.50.04DC22(Journal) (6691894-N) DOI: 10.7567/JJAP.50.04DC22(Journal) ========================================================== Created: 2023-02-01 12:48:12 ConfID: 6716470 CauseID: 1560040806 OtherID: 1363321206 JT: Japanese Journal of Applied Physics MD: Nakai,51,7s,707,2012,Numerical Analysis of Long Range Sound Wave Propagation in Ocean by Wave Equation Finite Difference Time Domain Method with Graphics Processing Unit DOI: 10.1143/JJAP.51.07GG07(Journal) (6716470-N) DOI: 10.7567/JJAP.51.07GG07(Journal) ========================================================== Created: 2023-01-05 12:03:30 ConfID: 6691895 CauseID: 1557136854 OtherID: 1363323573 JT: Japanese Journal of Applied Physics MD: Mizuno,50,4s,402,2011,Abrupt Lateral-Source Heterostructures with Relaxed/Strained Layers for Ballistic Complementary Metal Oxide Semiconductor Transistors Fabricated by Local O+ Ion-Induced Relaxation Technique of Strained Substrates DOI: 10.1143/JJAP.50.04DC02(Journal) (6691895-N) DOI: 10.7567/JJAP.50.04DC02(Journal) ========================================================== Created: 2023-02-01 12:48:15 ConfID: 6716471 CauseID: 1560040810 OtherID: 1363321298 JT: Japanese Journal of Applied Physics MD: Kim,51,8s1,802,2012,Plasma-Etching of Spray-Coated Single-Walled Carbon Nanotube Films for Biointerfaces DOI: 10.1143/JJAP.51.08HE02(Journal) (6716471-N) DOI: 10.7567/JJAP.51.08HE02(Journal) ========================================================== Created: 2023-01-05 12:12:18 ConfID: 6691892 CauseID: 1557138063 OtherID: 1363324246 JT: Japanese Journal of Applied Physics MD: Kim,50,7s,708,2011,Visualization of Thermal Distribution Caused by Focused Ultrasound Field in an Agar Phantom DOI: 10.1143/JJAP.50.07HC08(Journal) (6691892-N) DOI: 10.7567/JJAP.50.07HC08(Journal) ========================================================== Created: 2023-02-01 12:48:13 ConfID: 6716468 CauseID: 1560040801 OtherID: 1363320755 JT: Japanese Journal of Applied Physics MD: Hasebe,51,4s,403,2012,Analysis of Sharp Dip Structures on Terahertz Transmission Spectra of Metallic Meshes DOI: 10.1143/JJAP.51.04DL03(Journal) (6716468-N) DOI: 10.7567/JJAP.51.04DL03(Journal) ========================================================== Created: 2023-01-05 12:12:35 ConfID: 6691893 CauseID: 1557138115 OtherID: 1363322983 JT: Japanese Journal of Applied Physics MD: Kangawa,50,12r,120202,2011,Microstructure of Bulk AlN Grown by A New Solution Growth Method DOI: 10.1143/JJAP.50.120202(Journal) (6691893-N) DOI: 10.7567/JJAP.50.120202(Journal) ========================================================== Created: 2023-02-01 12:48:10 ConfID: 6716469 CauseID: 1560040803 OtherID: 1363320679 JT: Japanese Journal of Applied Physics MD: Lee,51,4s,406,2012,Passivation of Ge(100) and (111) Surfaces by Termination of Nonmetal Elements DOI: 10.1143/JJAP.51.04DA06(Journal) (6716469-N) DOI: 10.7567/JJAP.51.04DA06(Journal) ========================================================== Created: 2023-01-05 12:03:28 ConfID: 6691890 CauseID: 1557136848 OtherID: 1363323591 JT: Japanese Journal of Applied Physics MD: Kwon,50,4s,402,2011,Conduction Mechanism and Reliability Characteristics of a Metal–Insulator–Metal Capacitor with Single ZrO2 Layer DOI: 10.1143/JJAP.50.04DD02(Journal) (6691890-N) DOI: 10.7567/JJAP.50.04DD02(Journal) ========================================================== Created: 2023-02-01 12:48:08 ConfID: 6716466 CauseID: 1560040798 OtherID: 1363321191 JT: Japanese Journal of Applied Physics MD: Nitta,51,7s,715,2012,Elasticity Evaluation of Regenerating Cartilage Sample Based on Laser Doppler Measurement of Ultrasonic Particle Velocity DOI: 10.1143/JJAP.51.07GF15(Journal) (6716466-N) DOI: 10.7567/JJAP.51.07GF15(Journal) ========================================================== Created: 2023-01-05 12:03:29 ConfID: 6691891 CauseID: 1557136849 OtherID: 1363323577 JT: Japanese Journal of Applied Physics MD: Virani,50,4s,404,2011,Double Dielectric Spacer for the Enhancement of Silicon p-Channel Tunnel Field Effect Transistor Performance DOI: 10.1143/JJAP.50.04DC04(Journal) (6691891-N) DOI: 10.7567/JJAP.50.04DC04(Journal) ========================================================== Created: 2023-02-01 12:48:10 ConfID: 6716467 CauseID: 1560040799 OtherID: 1363320700 JT: Japanese Journal of Applied Physics MD: Chen,51,4s,415,2012,Evaluation of the WOx Film Properties for Resistive Random Access Memory Application DOI: 10.1143/JJAP.51.04DD15(Journal) (6716467-N) DOI: 10.7567/JJAP.51.04DD15(Journal) ========================================================== Created: 2023-01-05 12:03:26 ConfID: 6691888 CauseID: 1557136846 OtherID: 1363323581 JT: Japanese Journal of Applied Physics MD: Veloso,50,4s,416,2011,Multi-Gate Fin Field-Effect Transistors Junctions Optimization by Conventional Ion Implantation for (Sub-)22 nm Technology Nodes Circuit Applications DOI: 10.1143/JJAP.50.04DC16(Journal) (6691888-N) DOI: 10.7567/JJAP.50.04DC16(Journal) ========================================================== Created: 2023-02-01 12:48:06 ConfID: 6716464 CauseID: 1560040795 OtherID: 1363320979 JT: Japanese Journal of Applied Physics MD: Matsutani,51,6s,605,2012,Microfabrication of Si-Based High-Index-Contrast-Grating Structure by Thermal Nanoimprint Lithography and Cl2/Xe-Inductively Coupled Plasma Etching DOI: 10.1143/JJAP.51.06FF05(Journal) (6716464-N) DOI: 10.7567/JJAP.51.06FF05(Journal) ========================================================== Created: 2023-01-05 12:03:27 ConfID: 6691889 CauseID: 1557136847 OtherID: 1363323589 JT: Japanese Journal of Applied Physics MD: Kang,50,4s,403,2011,Improving Read Disturb Characteristics by Using Double Common Source Line and Dummy Switch Architecture in Multi Level Cell NAND Flash Memory with Low Power Consumption DOI: 10.1143/JJAP.50.04DD03(Journal) (6691889-N) DOI: 10.7567/JJAP.50.04DD03(Journal) ========================================================== Created: 2023-02-01 12:48:07 ConfID: 6716465 CauseID: 1560040797 OtherID: 1363320759 JT: Japanese Journal of Applied Physics MD: Majeed,51,4s,401,2012,Silicon Based System for Single-Nucleotide-Polymorphism Detection: Chip Fabrication and Thermal Characterization of Polymerase Chain Reaction Microchamber DOI: 10.1143/JJAP.51.04DL01(Journal) (6716465-N) DOI: 10.7567/JJAP.51.04DL01(Journal) ========================================================== Created: 2023-01-05 12:03:34 ConfID: 6691902 CauseID: 1557136860 OtherID: 1363323597 JT: Japanese Journal of Applied Physics MD: Kim,50,4s,408,2011,Investigation of Threshold Voltage Disturbance Caused by Programmed Adjacent Cell in Virtual Source/Drain NAND Flash Memory DOI: 10.1143/JJAP.50.04DD08(Journal) (6691902-N) DOI: 10.7567/JJAP.50.04DD08(Journal) ========================================================== Created: 2023-02-01 12:48:22 ConfID: 6716478 CauseID: 1560040824 OtherID: 1363321325 JT: Japanese Journal of Applied Physics MD: Kim,51,8s2,802,2012,Simplified Decoding of Trellis-Based Error-Correcting Modulation Codes Using the M-Algorithm for Holographic Data Storage DOI: 10.1143/JJAP.51.08JD02(Journal) (6716478-N) DOI: 10.7567/JJAP.51.08JD02(Journal) ========================================================== Created: 2023-01-05 12:03:39 ConfID: 6691903 CauseID: 1557136864 OtherID: 1363323610 JT: Japanese Journal of Applied Physics MD: Tiao,50,4s,411,2011,Low-Voltage and High-Speed Voltage-Controlled Ring Oscillator with Wide Tuning Range in 0.18 µm Complementary Metal Oxide Semiconductor DOI: 10.1143/JJAP.50.04DE11(Journal) (6691903-N) DOI: 10.7567/JJAP.50.04DE11(Journal) ========================================================== Created: 2023-02-01 12:48:24 ConfID: 6716479 CauseID: 1560040826 OtherID: 1363320830 JT: Japanese Journal of Applied Physics MD: Takeyama,51,5s,506,2012,Oxidation Characteristics of Thin Al–Mo Alloy Films with Various Compositions as Metal Capping Layer on Cu DOI: 10.1143/JJAP.51.05EA06(Journal) (6716479-N) DOI: 10.7567/JJAP.51.05EA06(Journal) ========================================================== Created: 2023-01-05 12:03:33 ConfID: 6691900 CauseID: 1557136858 OtherID: 1363323576 JT: Japanese Journal of Applied Physics MD: Han,50,4s,413,2011,Novel High-Performance Analog Devices for Advanced Low-Power High-k Metal Gate Complementary Metal–Oxide–Semiconductor Technology DOI: 10.1143/JJAP.50.04DC13(Journal) (6691900-N) DOI: 10.7567/JJAP.50.04DC13(Journal) ========================================================== Created: 2023-02-01 12:48:20 ConfID: 6716476 CauseID: 1560040820 OtherID: 1363320937 JT: Japanese Journal of Applied Physics MD: Algul,51,6s,627,2012,Optimization of Source/Drain Doping Level of Carbon Nanotube Field-Effect Transistors to Suppress OFF-State Leakage Current while Keeping Ideal ON-State Current DOI: 10.1143/JJAP.51.06FD27(Journal) (6716476-N) DOI: 10.7567/JJAP.51.06FD27(Journal) ========================================================== Created: 2023-01-05 12:03:33 ConfID: 6691901 CauseID: 1557136859 OtherID: 1363323553 JT: Japanese Journal of Applied Physics MD: Hirayama,50,4s,410,2011,Fabrication of Ge Metal–Oxide–Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO2/GeO2 Bilayer Passivation and Postmetallization Annealing Effect of Al DOI: 10.1143/JJAP.50.04DA10(Journal) (6691901-N) DOI: 10.7567/JJAP.50.04DA10(Journal) ========================================================== Created: 2023-02-01 12:48:21 ConfID: 6716477 CauseID: 1560040822 OtherID: 1363320729 JT: Japanese Journal of Applied Physics MD: Kil,51,4s,402,2012,Bidirectional Two-Terminal Switching Device for Non-Volatile Random Access Memory DOI: 10.1143/JJAP.51.04DJ02(Journal) (6716477-N) DOI: 10.7567/JJAP.51.04DJ02(Journal) ========================================================== Created: 2023-01-05 12:03:31 ConfID: 6691898 CauseID: 1557136856 OtherID: 1363323602 JT: Japanese Journal of Applied Physics MD: Miyasako,50,4s,409,2011,Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process DOI: 10.1143/JJAP.50.04DD09(Journal) (6691898-N) DOI: 10.7567/JJAP.50.04DD09(Journal) ========================================================== Created: 2023-02-01 12:48:18 ConfID: 6716474 CauseID: 1560040816 OtherID: 1363321269 JT: Japanese Journal of Applied Physics MD: Suda,51,8s1,802,2012,Development of Cu Etching Using O2 Cluster Ion Beam under Acetic Acid Gas Atmosphere DOI: 10.1143/JJAP.51.08HA02(Journal) (6716474-N) DOI: 10.7567/JJAP.51.08HA02(Journal) ========================================================== Created: 2023-01-05 12:03:32 ConfID: 6691899 CauseID: 1557136857 OtherID: 1363323582 JT: Japanese Journal of Applied Physics MD: Li,50,4s,407,2011,Dual-Material Gate Approach to Suppression of Random-Dopant-Induced Characteristic Fluctuation in 16 nm Metal–Oxide–Semiconductor Field-Effect-Transistor Devices DOI: 10.1143/JJAP.50.04DC07(Journal) (6691899-N) DOI: 10.7567/JJAP.50.04DC07(Journal) ========================================================== Created: 2023-02-01 12:48:20 ConfID: 6716475 CauseID: 1560040819 OtherID: 1363320935 JT: Japanese Journal of Applied Physics MD: Matsuzaki,51,6s,618,2012,Continuous Electron Doping of Single-Walled Carbon Nanotube Films Using Inkjet Technique DOI: 10.1143/JJAP.51.06FD18(Journal) (6716475-N) DOI: 10.7567/JJAP.51.06FD18(Journal) ========================================================== Created: 2023-01-05 12:03:31 ConfID: 6691896 CauseID: 1557136855 OtherID: 1363323551 JT: Japanese Journal of Applied Physics MD: Wang,50,4s,401,2011,Isotope Tracing Study of GeO Desorption Mechanism from GeO2/Ge Stack Using 73Ge and 18O DOI: 10.1143/JJAP.50.04DA01(Journal) (6691896-N) DOI: 10.7567/JJAP.50.04DA01(Journal) ========================================================== Created: 2023-02-01 12:48:15 ConfID: 6716472 CauseID: 1560040813 OtherID: 1363320769 JT: Japanese Journal of Applied Physics MD: Okuda,51,4s,409,2012,Current Transport Characteristics of Quasi-AlxGa1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities DOI: 10.1143/JJAP.51.04DP09(Journal) (6716472-N) DOI: 10.7567/JJAP.51.04DP09(Journal) ========================================================== Created: 2023-01-05 12:12:39 ConfID: 6691897 CauseID: 1557138118 OtherID: 1363323256 JT: Japanese Journal of Applied Physics MD: Rungrodnimitchai,50,1s2,117,2011,Novel Synthesis of CaF2 Nanocrystals and the Effect of Pyridine Addition on Their Crystal Size DOI: 10.1143/JJAP.50.01BJ17(Journal) (6691897-N) DOI: 10.7567/JJAP.50.01BJ17(Journal) ========================================================== Created: 2023-02-01 12:48:19 ConfID: 6716473 CauseID: 1560040811 OtherID: 1363321304 JT: Japanese Journal of Applied Physics MD: Tsuda,51,8s1,801,2012,Modeling and Simulation of Nanoscale Surface Rippling during Plasma Etching of Si under Oblique Ion Incidence DOI: 10.1143/JJAP.51.08HC01(Journal) (6716473-N) DOI: 10.7567/JJAP.51.08HC01(Journal) ========================================================== Created: 2023-01-05 12:03:15 ConfID: 6691846 CauseID: 1557136824 OtherID: 1363323568 JT: Japanese Journal of Applied Physics MD: Kotani,50,4s,404,2011,Above-Complementary Metal–Oxide–Semiconductor Metal Pattern Technique for Postfabrication Tuning of On-Chip Inductor Characteristics DOI: 10.1143/JJAP.50.04DB04(Journal) (6691846-N) DOI: 10.7567/JJAP.50.04DB04(Journal) ========================================================== Created: 2023-02-01 12:47:21 ConfID: 6716422 CauseID: 1560040685 OtherID: 1363320066 JT: Japanese Journal of Applied Physics MD: Lee,51,12r,122102,2012,Improved Light Extraction of GaN-Based Blue Light-Emitting Diodes with ZnO Nanorods on Transparent Ni/Al-Doped ZnO Current Spreading Layer DOI: 10.1143/JJAP.51.122102(Journal) (6716422-N) DOI: 10.7567/JJAP.51.122102(Journal) ========================================================== Created: 2023-01-05 12:03:15 ConfID: 6691847 CauseID: 1557136825 OtherID: 1363323575 JT: Japanese Journal of Applied Physics MD: Gaubert,50,4s,401,2011,Analysis of the Low-Frequency Noise Reduction in Si(100) Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.50.04DC01(Journal) (6691847-N) DOI: 10.7567/JJAP.50.04DC01(Journal) ========================================================== Created: 2023-02-01 12:47:28 ConfID: 6716423 CauseID: 1560040694 OtherID: 1363320903 JT: Japanese Journal of Applied Physics MD: Iwasaki,51,6s,605,2012,Maskless Lithographic Fine Patterning on Deeply Etched or Slanted Surfaces, and Grayscale Lithography, Using Newly Developed Digital Mirror Device Lithography Equipment DOI: 10.1143/JJAP.51.06FB05(Journal) (6716423-N) DOI: 10.7567/JJAP.51.06FB05(Journal) ========================================================== Created: 2023-01-05 12:06:43 ConfID: 6691844 CauseID: 1557137304 OtherID: 1363323874 JT: Japanese Journal of Applied Physics MD: Hidaka,50,5s2,504,2011,Effect of Ho Co-Doping on the Long Lasting Emission of CaGa2S4:Eu DOI: 10.1143/JJAP.50.05FG04(Journal) (6691844-N) DOI: 10.7567/JJAP.50.05FG04(Journal) ========================================================== Created: 2023-02-01 12:47:24 ConfID: 6716420 CauseID: 1560040682 OtherID: 1363320743 JT: Japanese Journal of Applied Physics MD: Oda,51,4s,410,2012,Improving Optical Properties of Ge Layers Fabricated by Epitaxial Growth Combined with Ge Condensation DOI: 10.1143/JJAP.51.04DG10(Journal) (6716420-N) DOI: 10.7567/JJAP.51.04DG10(Journal) ========================================================== Created: 2023-01-05 12:06:43 ConfID: 6691845 CauseID: 1557137305 OtherID: 1363323880 JT: Japanese Journal of Applied Physics MD: Kheradmand,50,5s2,507,2011,Switching On/Off of Cavity Solitons in Semiconductor Microresonators via Carrier Injection above Laser Threshold DOI: 10.1143/JJAP.50.05FG07(Journal) (6691845-N) DOI: 10.7567/JJAP.50.05FG07(Journal) ========================================================== Created: 2023-02-01 12:47:22 ConfID: 6716421 CauseID: 1560040686 OtherID: 1363321213 JT: Japanese Journal of Applied Physics MD: Ebihara,51,7s,704,2012,Experimental Study of Doppler Effect for Underwater Acoustic Communication Using Orthogonal Signal Division Multiplexing DOI: 10.1143/JJAP.51.07GG04(Journal) (6716421-N) DOI: 10.7567/JJAP.51.07GG04(Journal) ========================================================== Created: 2023-01-05 12:06:41 ConfID: 6691842 CauseID: 1557137302 OtherID: 1363323883 JT: Japanese Journal of Applied Physics MD: Hajimammadov,50,5s2,501,2011,Effect of “CdCl2 Treatment” on Properties of CdTe-Based Solar Cells Prepared by Physical Vapor Deposition and Close-Spaced Sublimation Methods DOI: 10.1143/JJAP.50.05FH01(Journal) (6691842-N) DOI: 10.7567/JJAP.50.05FH01(Journal) ========================================================== Created: 2023-02-01 12:47:23 ConfID: 6716418 CauseID: 1560040681 OtherID: 1363320737 JT: Japanese Journal of Applied Physics MD: Nakajima,51,4s,403,2012,In-Plane Grain Orientation Alignment of Polycrystalline Silicon Films by Normal and Oblique-Angle Ion Implantations DOI: 10.1143/JJAP.51.04DH03(Journal) (6716418-N) DOI: 10.7567/JJAP.51.04DH03(Journal) ========================================================== Created: 2023-01-05 12:03:13 ConfID: 6691843 CauseID: 1557136820 OtherID: 1363323522 JT: Japanese Journal of Applied Physics MD: Wang,50,4r,42501,2011,Resonator Fiber Optic Gyro with Bipolar Digital Serrodyne Scheme Using a Field-Programmable Gate Array-Based Digital Processor DOI: 10.1143/JJAP.50.042501(Journal) (6691843-N) DOI: 10.7567/JJAP.50.042501(Journal) ========================================================== Created: 2023-02-01 12:47:21 ConfID: 6716419 CauseID: 1560040684 OtherID: 1363320058 JT: Japanese Journal of Applied Physics MD: Kang,51,12r,120203,2012,Layer-to-Layer Grating Coupler Based on Hydrogenated Amorphous Silicon for Three-Dimensional Optical Circuits DOI: 10.1143/JJAP.51.120203(Journal) (6716419-N) DOI: 10.7567/JJAP.51.120203(Journal) ========================================================== Created: 2023-01-05 12:03:12 ConfID: 6691840 CauseID: 1557136818 OtherID: 1363323528 JT: Japanese Journal of Applied Physics MD: Sato,50,4r,45802,2011,High Rate Reactive Sputter Deposition of TiO2 Films for Photocatalyst and Dye-Sensitized Solar Cells DOI: 10.1143/JJAP.50.045802(Journal) (6691840-N) DOI: 10.7567/JJAP.50.045802(Journal) ========================================================== Created: 2023-02-01 12:47:18 ConfID: 6716416 CauseID: 1560040665 OtherID: 1363320748 JT: Japanese Journal of Applied Physics MD: Wu,51,4s,406,2012,Enhancing the Performance of Pentacene-Based Organic Thin Film Transistors by Inserting Stacked N,N '-Diphenyl-N,N '-bis(1-naphthyl-phenyl)-(1,1'-biphenyl)-4,4'-diamine and Tris(8-hydroxyquinolino)-aluminum Buffer Layers DOI: 10.1143/JJAP.51.04DK06(Journal) (6716416-N) DOI: 10.7567/JJAP.51.04DK06(Journal) ========================================================== Created: 2023-01-05 12:03:13 ConfID: 6691841 CauseID: 1557136819 OtherID: 1363323552 JT: Japanese Journal of Applied Physics MD: Lucovsky,50,4s,415,2011,Many-Electron Multiplet Theory Applied to O-Atom Vacancies in High-κ Dielectrics DOI: 10.1143/JJAP.50.04DA15(Journal) (6691841-N) DOI: 10.7567/JJAP.50.04DA15(Journal) ========================================================== Created: 2023-02-01 12:47:19 ConfID: 6716417 CauseID: 1560040667 OtherID: 1363321192 JT: Japanese Journal of Applied Physics MD: Koriyama,51,7s,709,2012,Experimental Evaluation of Quantitative Diagnosis Technique for Hepatic Fibrosis Using Ultrasonic Phantom DOI: 10.1143/JJAP.51.07GF09(Journal) (6716417-N) DOI: 10.7567/JJAP.51.07GF09(Journal) ========================================================== Created: 2023-01-05 12:06:50 ConfID: 6691854 CauseID: 1557137323 OtherID: 1363323906 JT: Japanese Journal of Applied Physics MD: Tairov,50,5s2,506,2011,Comparison of the Valence Band Structure Peculiarities in the Bi0.84–Sb0.16–Sn0.1 and Pure Semiconducting Bi1-xSbx Alloys DOI: 10.1143/JJAP.50.05FH06(Journal) (6691854-N) DOI: 10.7567/JJAP.50.05FH06(Journal) ========================================================== Created: 2023-02-01 12:47:31 ConfID: 6716430 CauseID: 1560040711 OtherID: 1363320829 JT: Japanese Journal of Applied Physics MD: Sasaki,51,5s,502,2012,In-situ Spectroscopic Ellipsometry of the Cu Deposition Process from Supercritical Fluids: Evidence of an Abnormal Surface Layer Formation DOI: 10.1143/JJAP.51.05EA02(Journal) (6716430-N) DOI: 10.7567/JJAP.51.05EA02(Journal) ========================================================== Created: 2023-01-05 12:03:19 ConfID: 6691855 CauseID: 1557136830 OtherID: 1363323565 JT: Japanese Journal of Applied Physics MD: Kuroda,50,4s,403,2011,Impact of Channel Direction Dependent Low Field Hole Mobility on (100) Orientation Silicon Surface DOI: 10.1143/JJAP.50.04DC03(Journal) (6691855-N) DOI: 10.7567/JJAP.50.04DC03(Journal) ========================================================== Created: 2023-02-01 12:47:33 ConfID: 6716431 CauseID: 1560040713 OtherID: 1363320723 JT: Japanese Journal of Applied Physics MD: Tanoi,51,4s,411,2012,A Wide-Range Tunable Level-Keeper Using Vertical Metal–Oxide–Semiconductor Field-Effect Transistors for Current-Reuse Systems DOI: 10.1143/JJAP.51.04DE11(Journal) (6716431-N) DOI: 10.7567/JJAP.51.04DE11(Journal) ========================================================== Created: 2023-01-05 12:06:47 ConfID: 6691852 CauseID: 1557137311 OtherID: 1363323858 JT: Japanese Journal of Applied Physics MD: Seyidov,50,5s2,508,2011,Photoinduced Current Transient Spectroscopy of TlInS2 Layered Crystals Doped with Er, B, and Tb Impurities DOI: 10.1143/JJAP.50.05FC08(Journal) (6691852-N) DOI: 10.7567/JJAP.50.05FC08(Journal) ========================================================== Created: 2023-02-01 12:47:34 ConfID: 6716428 CauseID: 1560040706 OtherID: 1363320735 JT: Japanese Journal of Applied Physics MD: Mori,51,4s,401,2012,Strain Effects on Avalanche Multiplication in a Silicon Nanodot Array DOI: 10.1143/JJAP.51.04DJ01(Journal) (6716428-N) DOI: 10.7567/JJAP.51.04DJ01(Journal) ========================================================== Created: 2023-01-05 12:06:49 ConfID: 6691853 CauseID: 1557137315 OtherID: 1363323842 JT: Japanese Journal of Applied Physics MD: Ohta,50,5s2,510,2011,Annealing Effect of Ce-Doped CaGa2S4 Synthesized by Mechanochemical Solid-State Reaction DOI: 10.1143/JJAP.50.05FB10(Journal) (6691853-N) DOI: 10.7567/JJAP.50.05FB10(Journal) ========================================================== Created: 2023-02-01 12:47:30 ConfID: 6716429 CauseID: 1560040708 OtherID: 1363320063 JT: Japanese Journal of Applied Physics MD: Fukuda,51,12r,122101,2012,White Light-Emitting Diodes for Wide-Color-Gamut Backlight Using Green-Emitting Sr-Sialon Phosphor DOI: 10.1143/JJAP.51.122101(Journal) (6716429-N) DOI: 10.7567/JJAP.51.122101(Journal) ========================================================== Created: 2023-01-05 12:03:18 ConfID: 6691850 CauseID: 1557136828 OtherID: 1363323524 JT: Japanese Journal of Applied Physics MD: Li,50,4r,45804,2011,Effect of Heat Treatment on Ion Conductivity of Hydrated ZrO2 Thin Films Prepared by Reactive Sputtering Using H2O Gas DOI: 10.1143/JJAP.50.045804(Journal) (6691850-N) DOI: 10.7567/JJAP.50.045804(Journal) ========================================================== Created: 2023-02-01 12:47:26 ConfID: 6716426 CauseID: 1560040698 OtherID: 1363320860 JT: Japanese Journal of Applied Physics MD: Shi,51,5s,504,2012,Thermomechanical Fatigue Performance of Lead-Free Chip Scale Package Assemblies with Fast Cure and Reworkable Capillary Flow Underfills DOI: 10.1143/JJAP.51.05EE04(Journal) (6716426-N) DOI: 10.7567/JJAP.51.05EE04(Journal) ========================================================== Created: 2023-01-05 12:03:18 ConfID: 6691851 CauseID: 1557136829 OtherID: 1363323542 JT: Japanese Journal of Applied Physics MD: Weng,50,4r,46502,2011,Electromagnetic Imprint Technique Combined with Electrophoretic Deposition Technique in Forming Microelectrode Structures DOI: 10.1143/JJAP.50.046502(Journal) (6691851-N) DOI: 10.7567/JJAP.50.046502(Journal) ========================================================== Created: 2023-02-01 12:47:33 ConfID: 6716427 CauseID: 1560040705 OtherID: 1363320847 JT: Japanese Journal of Applied Physics MD: Kwak,51,5s,505,2012,Effects of Temperature and Current Stressing on the Intermetallic Compounds Growth Characteristics of Cu Pillar/Sn–3.5Ag Microbump DOI: 10.1143/JJAP.51.05EE05(Journal) (6716427-N) DOI: 10.7567/JJAP.51.05EE05(Journal) ========================================================== Created: 2023-01-05 12:03:16 ConfID: 6691848 CauseID: 1557136826 OtherID: 1363323558 JT: Japanese Journal of Applied Physics MD: Pantouvaki,50,4s,401,2011,Advanced Organic Polymer for the Aggressive Scaling of Low-k Materials DOI: 10.1143/JJAP.50.04DB01(Journal) (6691848-N) DOI: 10.7567/JJAP.50.04DB01(Journal) ========================================================== Created: 2023-02-01 12:47:28 ConfID: 6716424 CauseID: 1560040693 OtherID: 1363320053 JT: Japanese Journal of Applied Physics MD: Yamashita,51,12r,120204,2012,Improvement of Electrical Contact Reliability by Conductive Polymer Coated Elastomer Structure in Woven Electronic Textiles DOI: 10.1143/JJAP.51.120204(Journal) (6716424-N) DOI: 10.7567/JJAP.51.120204(Journal) ========================================================== Created: 2023-01-05 12:03:17 ConfID: 6691849 CauseID: 1557136827 OtherID: 1363323550 JT: Japanese Journal of Applied Physics MD: Kume,50,4s,402,2011,Improvement of Uniformity and Reliability of Scaled-Down Cu Interconnects with Carbon-Rich Low-k Films DOI: 10.1143/JJAP.50.04DB02(Journal) (6691849-N) DOI: 10.7567/JJAP.50.04DB02(Journal) ========================================================== Created: 2023-02-01 12:47:29 ConfID: 6716425 CauseID: 1560040695 OtherID: 1363320738 JT: Japanese Journal of Applied Physics MD: Shojiki,51,4s,401,2012,Tilted Domain and Indium Content of InGaN Layer on m-Plane GaN Substrate Grown by Metalorganic Vapor Phase Epitaxy DOI: 10.1143/JJAP.51.04DH01(Journal) (6716425-N) DOI: 10.7567/JJAP.51.04DH01(Journal) ========================================================== Created: 2023-01-05 12:03:22 ConfID: 6691862 CauseID: 1557136836 OtherID: 1363323566 JT: Japanese Journal of Applied Physics MD: Leonelli,50,4s,405,2011,Silicide Engineering to Boost Si Tunnel Transistor Drive Current DOI: 10.1143/JJAP.50.04DC05(Journal) (6691862-N) DOI: 10.7567/JJAP.50.04DC05(Journal) ========================================================== Created: 2023-02-01 12:47:42 ConfID: 6716438 CauseID: 1560040733 OtherID: 1363320744 JT: Japanese Journal of Applied Physics MD: Amemiya,51,4s,407,2012,Silicon Ring Optical Modulator with p/n Junctions Arranged along Waveguide for Low-Voltage Operation DOI: 10.1143/JJAP.51.04DG07(Journal) (6716438-N) DOI: 10.7567/JJAP.51.04DG07(Journal) ========================================================== Created: 2023-01-05 12:07:59 ConfID: 6691863 CauseID: 1557137445 OtherID: 1363323108 JT: Japanese Journal of Applied Physics MD: Kohno,50,1r,18001,2011,Graphene/Graphite-Coated SiC Nanowires Grown by Metal–Organic Chemical Vapor Deposition in One Step DOI: 10.1143/JJAP.50.018001(Journal) (6691863-N) DOI: 10.7567/JJAP.50.018001(Journal) ========================================================== Created: 2023-02-01 12:47:42 ConfID: 6716439 CauseID: 1560040732 OtherID: 1363320747 JT: Japanese Journal of Applied Physics MD: Lim,51,4s,403,2012,Physics-Based SPICE Model of Spin-Torque Oscillators DOI: 10.1143/JJAP.51.04DM03(Journal) (6716439-N) DOI: 10.7567/JJAP.51.04DM03(Journal) ========================================================== Created: 2023-01-05 12:07:17 ConfID: 6691860 CauseID: 1557137370 OtherID: 1363323888 JT: Japanese Journal of Applied Physics MD: Yablonskii,50,5s2,502,2011,Luminescence Properties of Barium Thio- and Selenogallates Doped with Eu, Ce, and Eu+Ce DOI: 10.1143/JJAP.50.05FG02(Journal) (6691860-N) DOI: 10.7567/JJAP.50.05FG02(Journal) ========================================================== Created: 2023-02-01 12:47:37 ConfID: 6716436 CauseID: 1560040724 OtherID: 1363320757 JT: Japanese Journal of Applied Physics MD: Kuroda,51,4s,405,2012,Structural and Ferroelectric Characterization of Uniaxially Oriented Vinylidene Fluoride Oligomer Thin Films DOI: 10.1143/JJAP.51.04DK05(Journal) (6716436-N) DOI: 10.7567/JJAP.51.04DK05(Journal) ========================================================== Created: 2023-01-05 12:03:20 ConfID: 6691861 CauseID: 1557136834 OtherID: 1363323583 JT: Japanese Journal of Applied Physics MD: Tsunomura,50,4s,408,2011,High-Temperature Properties of Drain Current Variability in Scaled Field-Effect Transistors Analyzed by Decomposition Method DOI: 10.1143/JJAP.50.04DC08(Journal) (6691861-N) DOI: 10.7567/JJAP.50.04DC08(Journal) ========================================================== Created: 2023-02-01 12:47:41 ConfID: 6716437 CauseID: 1560040731 OtherID: 1363320762 JT: Japanese Journal of Applied Physics MD: Demiray,51,4s,404,2012,Relative Vortex State Control in a Co/Cu/Co Pseudo-Spin-Valve Ring DOI: 10.1143/JJAP.51.04DM04(Journal) (6716437-N) DOI: 10.7567/JJAP.51.04DM04(Journal) ========================================================== Created: 2023-01-05 12:07:15 ConfID: 6691858 CauseID: 1557137366 OtherID: 1363323875 JT: Japanese Journal of Applied Physics MD: Suzuki,50,5s2,503,2011,Analysis of the Enhancing Effect of Rare Earth Ion Co-Doping on the Red Emission of CaGa2S4:Mn2+ in View of Its Decay Time DOI: 10.1143/JJAP.50.05FG03(Journal) (6691858-N) DOI: 10.7567/JJAP.50.05FG03(Journal) ========================================================== Created: 2023-02-01 12:47:36 ConfID: 6716434 CauseID: 1560040721 OtherID: 1363320752 JT: Japanese Journal of Applied Physics MD: Reséndiz,51,4s,404,2012,Analysis of the Performance of an Inverter Circuit: Varying the Thickness of the Active Layer in Polymer Thin Film Transistors with Circuit Simulation DOI: 10.1143/JJAP.51.04DK04(Journal) (6716434-N) DOI: 10.7567/JJAP.51.04DK04(Journal) ========================================================== Created: 2023-01-05 12:07:15 ConfID: 6691859 CauseID: 1557137367 OtherID: 1363323892 JT: Japanese Journal of Applied Physics MD: Kheradmand,50,5s2,508,2011,Controlling and Stabilizing of Thermally Travelling Optical Structures in Semiconductor Microresonators DOI: 10.1143/JJAP.50.05FG08(Journal) (6691859-N) DOI: 10.7567/JJAP.50.05FG08(Journal) ========================================================== Created: 2023-02-01 12:47:36 ConfID: 6716435 CauseID: 1560040722 OtherID: 1363320717 JT: Japanese Journal of Applied Physics MD: Hoshi,51,4s,401,2012,Low-Turn-on-Voltage Heterojunction Bipolar Transistors with a C-Doped InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition DOI: 10.1143/JJAP.51.04DF01(Journal) (6716435-N) DOI: 10.7567/JJAP.51.04DF01(Journal) ========================================================== Created: 2023-01-05 12:07:07 ConfID: 6691856 CauseID: 1557137352 OtherID: 1363323864 JT: Japanese Journal of Applied Physics MD: Abdullayev,50,5s2,504,2011,Metal–Insulator Transition Induced by Temperature in Bi2Te3-xClx Layered Compound DOI: 10.1143/JJAP.50.05FD04(Journal) (6691856-N) DOI: 10.7567/JJAP.50.05FD04(Journal) ========================================================== Created: 2023-02-01 12:47:35 ConfID: 6716432 CauseID: 1560040715 OtherID: 1363321348 JT: Japanese Journal of Applied Physics MD: Yasuda,51,8s3,806,2012,Characterization of Isolated Individual Single-Walled Carbon Nanotube by Electrochemical Scanning Tunneling Microscopy DOI: 10.1143/JJAP.51.08KB06(Journal) (6716432-N) DOI: 10.7567/JJAP.51.08KB06(Journal) ========================================================== Created: 2023-01-05 12:03:20 ConfID: 6691857 CauseID: 1557136833 OtherID: 1363323526 JT: Japanese Journal of Applied Physics MD: Kato,50,4r,46602,2011,A New Technique for Enhancing Sensitivity of the 2ω Method by Applying a Bismuth Film Thermoreflectance Sensor on Top of the Metal Film–Dielectric Substrate Sample DOI: 10.1143/JJAP.50.046602(Journal) (6691857-N) DOI: 10.7567/JJAP.50.046602(Journal) ========================================================== Created: 2023-02-01 12:47:40 ConfID: 6716433 CauseID: 1560040719 OtherID: 1363320754 JT: Japanese Journal of Applied Physics MD: Nonaka,51,4s,401,2012,Anisotropic Weak Anti-Localization under In-Plane Magnetic Field and Control of Dimensionality via Spin Precession Length DOI: 10.1143/JJAP.51.04DM01(Journal) (6716433-N) DOI: 10.7567/JJAP.51.04DM01(Journal) ========================================================== Created: 2023-01-05 12:10:14 ConfID: 6691870 CauseID: 1557137739 OtherID: 1363323341 JT: Japanese Journal of Applied Physics MD: Miyamoto,50,3r,30205,2011,Post-thermal Annealing Effects on Photoluminescence Properties of InAs Quantum Dots on GaNAs Buffer Layer DOI: 10.1143/JJAP.50.030205(Journal) (6691870-N) DOI: 10.7567/JJAP.50.030205(Journal) ========================================================== Created: 2023-02-01 12:47:51 ConfID: 6716446 CauseID: 1560040752 OtherID: 1363321195 JT: Japanese Journal of Applied Physics MD: Moriyama,51,7s,727,2012,Thermal Simulation of Cavitation-Enhanced Ultrasonic Heating Verified with Tissue-Mimicking Gel DOI: 10.1143/JJAP.51.07GF27(Journal) (6716446-N) DOI: 10.7567/JJAP.51.07GF27(Journal) ========================================================== Created: 2023-01-05 12:10:19 ConfID: 6691871 CauseID: 1557137752 OtherID: 1363324259 JT: Japanese Journal of Applied Physics MD: Tokuda,50,7s,715,2011,Two-Dimensional Coupling-of-Modes Analysis in Surface Acoustic Wave Device Performed by COMSOL Multiphysics DOI: 10.1143/JJAP.50.07HD15(Journal) (6691871-N) DOI: 10.7567/JJAP.50.07HD15(Journal) ========================================================== Created: 2023-02-01 12:47:53 ConfID: 6716447 CauseID: 1560040757 OtherID: 1363320775 JT: Japanese Journal of Applied Physics MD: Ago,51,4s,402,2012,Growth of Horizontally-Aligned Single-Walled Carbon Nanotubes on Sapphire Surface by Needle-Scratching Method DOI: 10.1143/JJAP.51.04DN02(Journal) (6716447-N) DOI: 10.7567/JJAP.51.04DN02(Journal) ========================================================== Created: 2023-01-05 12:09:38 ConfID: 6691868 CauseID: 1557137655 OtherID: 1363324005 JT: Japanese Journal of Applied Physics MD: Endo,50,6s,604,2011,Theoretical Study of Photoacid Generators for Extreme Ultraviolet Resist DOI: 10.1143/JJAP.50.06GD04(Journal) (6691868-N) DOI: 10.7567/JJAP.50.06GD04(Journal) ========================================================== Created: 2023-02-01 12:47:50 ConfID: 6716444 CauseID: 1560040749 OtherID: 1363321188 JT: Japanese Journal of Applied Physics MD: Shiina,51,7s,711,2012,Mechanical Model Analysis for Quantitative Evaluation of Liver Fibrosis Based on Ultrasound Tissue Elasticity Imaging DOI: 10.1143/JJAP.51.07GF11(Journal) (6716444-N) DOI: 10.7567/JJAP.51.07GF11(Journal) ========================================================== Created: 2023-01-05 12:10:04 ConfID: 6691869 CauseID: 1557137711 OtherID: 1363324257 JT: Japanese Journal of Applied Physics MD: Park,50,7s,706,2011,Transmission Line Matrix Modeling for Analysis of Surface Acoustic Wave Hydrogen Sensor DOI: 10.1143/JJAP.50.07HD06(Journal) (6691869-N) DOI: 10.7567/JJAP.50.07HD06(Journal) ========================================================== Created: 2023-02-01 12:47:50 ConfID: 6716445 CauseID: 1560040751 OtherID: 1363320751 JT: Japanese Journal of Applied Physics MD: Yamada,51,4s,409,2012,Fundamental Study on Organic Solar Cells Based on Soluble Zinc Phthalocyanine DOI: 10.1143/JJAP.51.04DK09(Journal) (6716445-N) DOI: 10.7567/JJAP.51.04DK09(Journal) ========================================================== Created: 2023-01-05 12:08:49 ConfID: 6691866 CauseID: 1557137556 OtherID: 1363323191 JT: Japanese Journal of Applied Physics MD: Tachibana,50,1s2,101,2011,Evaluation of Polar Anchoring Energy Based on Symmetric Oblique Incident Transmission Ellipsometry Method: the Voltage Diminution by Alignment Films DOI: 10.1143/JJAP.50.01BA01(Journal) (6691866-N) DOI: 10.7567/JJAP.50.01BA01(Journal) ========================================================== Created: 2023-02-01 12:47:47 ConfID: 6716442 CauseID: 1560040741 OtherID: 1363320776 JT: Japanese Journal of Applied Physics MD: Kwon,51,4s,404,2012,Plasma Treatment to Improve Chemical Vapor Deposition-Grown Graphene to Metal Electrode Contact DOI: 10.1143/JJAP.51.04DN04(Journal) (6716442-N) DOI: 10.7567/JJAP.51.04DN04(Journal) ========================================================== Created: 2023-01-05 12:09:08 ConfID: 6691867 CauseID: 1557137598 OtherID: 1363324160 JT: Japanese Journal of Applied Physics MD: Ozawa,50,7r,70212,2011,DNA Electromagnetophoresis under the Condition of Magnetic Fields Perpendicular to Electric Fields DOI: 10.1143/JJAP.50.070212(Journal) (6691867-N) DOI: 10.7567/JJAP.50.070212(Journal) ========================================================== Created: 2023-02-01 12:47:48 ConfID: 6716443 CauseID: 1560040743 OtherID: 1363320731 JT: Japanese Journal of Applied Physics MD: Iwabuchi,51,4s,402,2012,Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN DOI: 10.1143/JJAP.51.04DH02(Journal) (6716443-N) DOI: 10.7567/JJAP.51.04DH02(Journal) ========================================================== Created: 2023-01-05 12:08:14 ConfID: 6691864 CauseID: 1557137481 OtherID: 1363324054 JT: Japanese Journal of Applied Physics MD: Wakaya,50,6s,614,2011,Electron Transport Properties of Pt Nanoarch Fabricated by Electron-Beam-Induced Deposition DOI: 10.1143/JJAP.50.06GG14(Journal) (6691864-N) DOI: 10.7567/JJAP.50.06GG14(Journal) ========================================================== Created: 2023-02-01 12:47:46 ConfID: 6716440 CauseID: 1560040739 OtherID: 1363320905 JT: Japanese Journal of Applied Physics MD: Mekaru,51,6s,601,2012,Patterning of Spiral Structure on Optical Fiber by Focused-Ion-Beam Etching DOI: 10.1143/JJAP.51.06FB01(Journal) (6716440-N) DOI: 10.7567/JJAP.51.06FB01(Journal) ========================================================== Created: 2023-01-05 12:03:23 ConfID: 6691865 CauseID: 1557136838 OtherID: 1363323557 JT: Japanese Journal of Applied Physics MD: Lee,50,4s,411,2011,Improvement in the Property of Field Effect Transistor Having the HfO2/Ge Structure Fabricated by Photoassisted Metal Organic Chemical Vapor Deposition with Fluorine Treatment DOI: 10.1143/JJAP.50.04DA11(Journal) (6691865-N) DOI: 10.7567/JJAP.50.04DA11(Journal) ========================================================== Created: 2023-02-01 12:47:44 ConfID: 6716441 CauseID: 1560040737 OtherID: 1363320836 JT: Japanese Journal of Applied Physics MD: Kikuchi,51,5s,502,2012,Robust Ultralow-k Dielectric (Fluorocarbon) Deposition by Microwave Plasma-Enhanced Chemical Vapor Deposition DOI: 10.1143/JJAP.51.05EC02(Journal) (6716441-N) DOI: 10.7567/JJAP.51.05EC02(Journal) ========================================================== Created: 2023-01-05 12:04:58 ConfID: 6692070 CauseID: 1557137060 OtherID: 1363323731 JT: Japanese Journal of Applied Physics MD: Kim,50,5r,50203,2011,Reverse-Tilt-Domain Boundary Wall in a Polymer-Encapsulated Flexible Liquid Crystal Display DOI: 10.1143/JJAP.50.050203(Journal) (6692070-N) DOI: 10.7567/JJAP.50.050203(Journal) ========================================================== Created: 2023-02-01 12:51:21 ConfID: 6716646 CauseID: 1560041245 OtherID: 1363321333 JT: Japanese Journal of Applied Physics MD: Ide,51,8s2,801,2012,Reduction of Interlayer Crosstalk of Multilayer Optical Disc by Using Phase-Diversity Homodyne Detection DOI: 10.1143/JJAP.51.08JE01(Journal) (6716646-N) DOI: 10.7567/JJAP.51.08JE01(Journal) ========================================================== Created: 2023-01-05 12:04:59 ConfID: 6692071 CauseID: 1557137061 OtherID: 1363323772 JT: Japanese Journal of Applied Physics MD: Jung,50,5r,57001,2011,Pulse Analyzing System Using Optical Coherence Tomography for Oriental Medical Application DOI: 10.1143/JJAP.50.057001(Journal) (6692071-N) DOI: 10.7567/JJAP.50.057001(Journal) ========================================================== Created: 2023-02-01 12:51:22 ConfID: 6716647 CauseID: 1560041249 OtherID: 1363321105 JT: Japanese Journal of Applied Physics MD: Motegi,51,7s,708,2012,Acoustic Hygrometer Based on Reverberation Time Measurement DOI: 10.1143/JJAP.51.07GB08(Journal) (6716647-N) DOI: 10.7567/JJAP.51.07GB08(Journal) ========================================================== Created: 2023-01-05 12:04:57 ConfID: 6692068 CauseID: 1557137058 OtherID: 1363323689 JT: Japanese Journal of Applied Physics MD: Hasegawa,50,4s,403,2011,Amperometric Electrochemical Sensor Array for On-Chip Simultaneous Imaging: Circuit and Microelectrode Design Considerations DOI: 10.1143/JJAP.50.04DL03(Journal) (6692068-N) DOI: 10.7567/JJAP.50.04DL03(Journal) ========================================================== Created: 2023-02-01 12:51:19 ConfID: 6716644 CauseID: 1560041237 OtherID: 1363321300 JT: Japanese Journal of Applied Physics MD: Kobayashi,51,8s1,804,2012,Decrease in Ozone Density of Atmospheric Surface-Discharge Plasma Source DOI: 10.1143/JJAP.51.08HC04(Journal) (6716644-N) DOI: 10.7567/JJAP.51.08HC04(Journal) ========================================================== Created: 2023-01-05 12:04:58 ConfID: 6692069 CauseID: 1557137059 OtherID: 1363323705 JT: Japanese Journal of Applied Physics MD: Fukuyama,50,4s,407,2011,Detection of Antigen–Antibody Reaction Using Si Ring Optical Resonators Functionalized with an Immobilized Antibody-Binding Protein DOI: 10.1143/JJAP.50.04DL07(Journal) (6692069-N) DOI: 10.7567/JJAP.50.04DL07(Journal) ========================================================== Created: 2023-02-01 12:51:19 ConfID: 6716645 CauseID: 1560041238 OtherID: 1363321144 JT: Japanese Journal of Applied Physics MD: Kuroyama,51,7s,704,2012,Evaluation of Acousto-Optic Effect on Size Distribution Measurement of Oscillating Cavitation Bubbles Using Optical Spectrometer DOI: 10.1143/JJAP.51.07GD04(Journal) (6716645-N) DOI: 10.7567/JJAP.51.07GD04(Journal) ========================================================== Created: 2023-01-05 12:04:56 ConfID: 6692066 CauseID: 1557137056 OtherID: 1363323674 JT: Japanese Journal of Applied Physics MD: Kajii,50,4s,405,2011,Current-Density Dependence of Transient Properties in Green Phosphorescent Organic Light-Emitting Diodes DOI: 10.1143/JJAP.50.04DK05(Journal) (6692066-N) DOI: 10.7567/JJAP.50.04DK05(Journal) ========================================================== Created: 2023-02-01 12:51:17 ConfID: 6716642 CauseID: 1560041235 OtherID: 1363321150 JT: Japanese Journal of Applied Physics MD: Park,51,7s,707,2012,Effect of Ultrasonic Frequency and Power Density for Degradation of Dichloroacetonitrile by Sonolytic Ozonation DOI: 10.1143/JJAP.51.07GD07(Journal) (6716642-N) DOI: 10.7567/JJAP.51.07GD07(Journal) ========================================================== Created: 2023-01-05 12:04:57 ConfID: 6692067 CauseID: 1557137057 OtherID: 1363323695 JT: Japanese Journal of Applied Physics MD: Chen,50,4s,405,2011,Fabrication of High-Sensitivity Polycrystalline Silicon Nanowire Field-Effect Transistor pH Sensor Using Conventional Complementary Metal–Oxide–Semiconductor Technology DOI: 10.1143/JJAP.50.04DL05(Journal) (6692067-N) DOI: 10.7567/JJAP.50.04DL05(Journal) ========================================================== Created: 2023-02-01 12:51:18 ConfID: 6716643 CauseID: 1560041236 OtherID: 1363321135 JT: Japanese Journal of Applied Physics MD: Sugawara,51,7s,706,2012,Improvement of Characteristics of Frequency-Change-Type Two-Axis Acceleration Sensor DOI: 10.1143/JJAP.51.07GC06(Journal) (6716643-N) DOI: 10.7567/JJAP.51.07GC06(Journal) ========================================================== Created: 2023-01-05 12:04:54 ConfID: 6692064 CauseID: 1557137046 OtherID: 1363323735 JT: Japanese Journal of Applied Physics MD: Zhang,50,4s,412,2011,Improvement of Film Quality in CuInSe2 Thin Films Fabricated by a Non-Vacuum, Nanoparticle-Based Approach DOI: 10.1143/JJAP.50.04DP12(Journal) (6692064-N) DOI: 10.7567/JJAP.50.04DP12(Journal) ========================================================== Created: 2023-02-01 12:51:13 ConfID: 6716640 CauseID: 1560041225 OtherID: 1363321202 JT: Japanese Journal of Applied Physics MD: Ikeshita,51,7s,714,2012,Improvement in Accuracy of Ultrasonic Measurement of Transient Change in Viscoelasticity of Radial Arterial Wall Due to Flow-Mediated Dilation by Adaptive Low-Pass Filtering DOI: 10.1143/JJAP.51.07GF14(Journal) (6716640-N) DOI: 10.7567/JJAP.51.07GF14(Journal) ========================================================== Created: 2023-01-05 12:04:55 ConfID: 6692065 CauseID: 1557137055 OtherID: 1363323686 JT: Japanese Journal of Applied Physics MD: Chen,50,4s,409,2011,Light Enhancement of Silicon-Nanocrystal-Embedded SiOx Film on Silicon-on-Insulator Substrate DOI: 10.1143/JJAP.50.04DJ09(Journal) (6692065-N) DOI: 10.7567/JJAP.50.04DJ09(Journal) ========================================================== Created: 2023-02-01 12:51:16 ConfID: 6716641 CauseID: 1560041232 OtherID: 1363321209 JT: Japanese Journal of Applied Physics MD: Jung,51,7s,709,2012,Seawater Temperature and Wind Speed Dependences and Diurnal Variation of Ambient Noise at the Snapping Shrimp Colony in Shallow Water of Southern Sea of Korea DOI: 10.1143/JJAP.51.07GG09(Journal) (6716641-N) DOI: 10.7567/JJAP.51.07GG09(Journal) ========================================================== Created: 2023-01-05 12:05:02 ConfID: 6692078 CauseID: 1557137078 OtherID: 1363323793 JT: Japanese Journal of Applied Physics MD: Aubel,50,5s1,501,2011,Comparison of Process Options for Improving Backend-of-Line Reliability in 28 nm Node Technologies and Beyond DOI: 10.1143/JJAP.50.05EA01(Journal) (6692078-N) DOI: 10.7567/JJAP.50.05EA01(Journal) ========================================================== Created: 2023-02-01 12:51:26 ConfID: 6716654 CauseID: 1560041265 OtherID: 1363321111 JT: Japanese Journal of Applied Physics MD: Yoshioka,51,7s,703,2012,Evaluation of Hydrophone Spatial Averaging Effect in Near Field Measurement for Determining Mechanical Index DOI: 10.1143/JJAP.51.07GB03(Journal) (6716654-N) DOI: 10.7567/JJAP.51.07GB03(Journal) ========================================================== Created: 2023-01-05 12:05:03 ConfID: 6692079 CauseID: 1557137079 OtherID: 1363323721 JT: Japanese Journal of Applied Physics MD: Saito,50,4s,403,2011,Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics DOI: 10.1143/JJAP.50.04DP03(Journal) (6692079-N) DOI: 10.7567/JJAP.50.04DP03(Journal) ========================================================== Created: 2023-02-01 12:51:27 ConfID: 6716655 CauseID: 1560041266 OtherID: 1363321314 JT: Japanese Journal of Applied Physics MD: Oh,51,8s2,806,2012,Modal Analysis of Optical Disk Rotating at 15,000 rpm Close to a Rigid Wall DOI: 10.1143/JJAP.51.08JA06(Journal) (6716655-N) DOI: 10.7567/JJAP.51.08JA06(Journal) ========================================================== Created: 2023-01-05 12:05:01 ConfID: 6692076 CauseID: 1557137076 OtherID: 1363323726 JT: Japanese Journal of Applied Physics MD: Algul,50,4s,401,2011,Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade DOI: 10.1143/JJAP.50.04DN01(Journal) (6692076-N) DOI: 10.7567/JJAP.50.04DN01(Journal) ========================================================== Created: 2023-02-01 12:51:29 ConfID: 6716652 CauseID: 1560041261 OtherID: 1363321153 JT: Japanese Journal of Applied Physics MD: Endo,51,7s,719,2012,Methanol Sensor Using Shear Horizontal Surface Acoustic Wave Device for Direct Methanol Fuel Cell DOI: 10.1143/JJAP.51.07GC19(Journal) (6716652-N) DOI: 10.7567/JJAP.51.07GC19(Journal) ========================================================== Created: 2023-01-05 12:05:02 ConfID: 6692077 CauseID: 1557137077 OtherID: 1363323728 JT: Japanese Journal of Applied Physics MD: Tojo,50,4s,412,2011,Positional Control of Crystal Grains in Silicon Thin Film Utilizing Cage-Shaped Protein DOI: 10.1143/JJAP.50.04DL12(Journal) (6692077-N) DOI: 10.7567/JJAP.50.04DL12(Journal) ========================================================== Created: 2023-02-01 12:51:26 ConfID: 6716653 CauseID: 1560041264 OtherID: 1363321166 JT: Japanese Journal of Applied Physics MD: Yamaguchi,51,7s,709,2012,An Ultrasonic Motor for Use at Ultralow Temperature Using Lead Magnesium Niobate–Lead Titanate Single Crystal DOI: 10.1143/JJAP.51.07GE09(Journal) (6716653-N) DOI: 10.7567/JJAP.51.07GE09(Journal) ========================================================== Created: 2023-01-05 12:05:04 ConfID: 6692074 CauseID: 1557137074 OtherID: 1363323718 JT: Japanese Journal of Applied Physics MD: Lee,50,4s,402,2011,Magnetic Anisotropy of GaMnAs Film and Its Application in Multi-valued Memory Devices DOI: 10.1143/JJAP.50.04DM02(Journal) (6692074-N) DOI: 10.7567/JJAP.50.04DM02(Journal) ========================================================== Created: 2023-02-01 12:51:24 ConfID: 6716650 CauseID: 1560041252 OtherID: 1363321109 JT: Japanese Journal of Applied Physics MD: Kosugi,51,7s,701,2012,Accuracy Evaluation of Surface Temperature Profiling by a Laser Ultrasonic Method DOI: 10.1143/JJAP.51.07GB01(Journal) (6716650-N) DOI: 10.7567/JJAP.51.07GB01(Journal) ========================================================== Created: 2023-01-05 12:05:00 ConfID: 6692075 CauseID: 1557137075 OtherID: 1363323691 JT: Japanese Journal of Applied Physics MD: Fukuyama,50,4s,411,2011,Sensitivity Improvement of Biosensors Using Si Ring Optical Resonators DOI: 10.1143/JJAP.50.04DL11(Journal) (6692075-N) DOI: 10.7567/JJAP.50.04DL11(Journal) ========================================================== Created: 2023-02-01 12:51:28 ConfID: 6716651 CauseID: 1560041260 OtherID: 1363321164 JT: Japanese Journal of Applied Physics MD: Hosokawa,51,7s,714,2012,Removal of Arsenic from Sulfuric Acid Solutions Using Jarosite and Sonication DOI: 10.1143/JJAP.51.07GD14(Journal) (6716651-N) DOI: 10.7567/JJAP.51.07GD14(Journal) ========================================================== Created: 2023-01-05 12:04:59 ConfID: 6692072 CauseID: 1557137062 OtherID: 1363323711 JT: Japanese Journal of Applied Physics MD: Tanamoto,50,4s,401,2011,High-Speed Magnetoresistive Random-Access Memory Random Number Generator Using Error-Correcting Code DOI: 10.1143/JJAP.50.04DM01(Journal) (6692072-N) DOI: 10.7567/JJAP.50.04DM01(Journal) ========================================================== Created: 2023-02-01 12:51:23 ConfID: 6716648 CauseID: 1560041251 OtherID: 1363321102 JT: Japanese Journal of Applied Physics MD: Nagakubo,51,7s,709,2012,Monitoring of Longitudinal-Wave Velocity and Attenuation of SrTiO3 at Low Temperatures Using Picosecond Ultrasound Spectroscopy DOI: 10.1143/JJAP.51.07GA09(Journal) (6716648-N) DOI: 10.7567/JJAP.51.07GA09(Journal) ========================================================== Created: 2023-01-05 12:05:01 ConfID: 6692073 CauseID: 1557137072 OtherID: 1363323700 JT: Japanese Journal of Applied Physics MD: Chin,50,4s,406,2011,Effects of CF4 Plasma Treatment on pH and pNa Sensing Properties of Light-Addressable Potentiometric Sensor with a 2-nm-Thick Sensitive HfO2 Layer Grown by Atomic Layer Deposition DOI: 10.1143/JJAP.50.04DL06(Journal) (6692073-N) DOI: 10.7567/JJAP.50.04DL06(Journal) ========================================================== Created: 2023-02-01 12:51:23 ConfID: 6716649 CauseID: 1560041250 OtherID: 1363321324 JT: Japanese Journal of Applied Physics MD: Kong,51,8s2,806,2012,Effective Two-Dimensional Partial Response Maximum Likelihood Detection Scheme for Holographic Data Storage Systems DOI: 10.1143/JJAP.51.08JB06(Journal) (6716649-N) DOI: 10.7567/JJAP.51.08JB06(Journal) ========================================================== Created: 2023-01-05 12:05:08 ConfID: 6692086 CauseID: 1557137097 OtherID: 1363323720 JT: Japanese Journal of Applied Physics MD: Entani,50,4s,403,2011,Interface Properties of Ag and Au/Graphene Heterostructures Studied by Micro-Raman Spectroscopy DOI: 10.1143/JJAP.50.04DN03(Journal) (6692086-N) DOI: 10.7567/JJAP.50.04DN03(Journal) ========================================================== Created: 2023-02-01 12:51:37 ConfID: 6716662 CauseID: 1560041295 OtherID: 1363321137 JT: Japanese Journal of Applied Physics MD: Ariizumi,51,7s,701,2012,Effects of Mn Additive on Dielectric and Piezoelectric Properties of (Na0.5K0.5)NbO3–BaZrO3–(Bi0.5K0.5)TiO3 Ternary System DOI: 10.1143/JJAP.51.07GC01(Journal) (6716662-N) DOI: 10.7567/JJAP.51.07GC01(Journal) ========================================================== Created: 2023-01-05 12:05:08 ConfID: 6692087 CauseID: 1557137098 OtherID: 1363323725 JT: Japanese Journal of Applied Physics MD: Uchino,50,4s,402,2011,Metal-Catalyst-Free Growth of Silica Nanowires and Carbon Nanotubes Using Ge Nanostructures DOI: 10.1143/JJAP.50.04DN02(Journal) (6692087-N) DOI: 10.7567/JJAP.50.04DN02(Journal) ========================================================== Created: 2023-02-01 12:51:40 ConfID: 6716663 CauseID: 1560041304 OtherID: 1363321194 JT: Japanese Journal of Applied Physics MD: Fukui,51,7s,720,2012,Measurement of Wave Velocity in Cortical Bone by Micro-Brillouin Scattering Technique: Effect of Bone Tissue Properties DOI: 10.1143/JJAP.51.07GF20(Journal) (6716663-N) DOI: 10.7567/JJAP.51.07GF20(Journal) ========================================================== Created: 2023-01-05 12:05:06 ConfID: 6692084 CauseID: 1557137094 OtherID: 1363323736 JT: Japanese Journal of Applied Physics MD: Bouzazi,50,5r,51001,2011,Origin Investigation of a Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy DOI: 10.1143/JJAP.50.051001(Journal) (6692084-N) DOI: 10.7567/JJAP.50.051001(Journal) ========================================================== Created: 2023-02-01 12:51:39 ConfID: 6716660 CauseID: 1560041291 OtherID: 1363321211 JT: Japanese Journal of Applied Physics MD: Mori,51,7s,710,2012,Extraction of Target Scatterings from Received Transients on Target Detection Trial of Ambient Noise Imaging with Acoustic Lens DOI: 10.1143/JJAP.51.07GG10(Journal) (6716660-N) DOI: 10.7567/JJAP.51.07GG10(Journal) ========================================================== Created: 2023-01-05 12:05:07 ConfID: 6692085 CauseID: 1557137095 OtherID: 1363323723 JT: Japanese Journal of Applied Physics MD: Ishihara,50,4s,403,2011,Magnetic Field Dependence of Quadrupolar Splitting and Nuclear Spin Coherence Time in a Strained (110) GaAs Quantum Well DOI: 10.1143/JJAP.50.04DM03(Journal) (6692085-N) DOI: 10.7567/JJAP.50.04DM03(Journal) ========================================================== Created: 2023-02-01 12:51:39 ConfID: 6716661 CauseID: 1560041292 OtherID: 1363321317 JT: Japanese Journal of Applied Physics MD: Mikami,51,8s2,801,2012,Compact Optical Module of Homodyne Detection DOI: 10.1143/JJAP.51.08JA01(Journal) (6716661-N) DOI: 10.7567/JJAP.51.08JA01(Journal) ========================================================== Created: 2023-01-05 12:05:10 ConfID: 6692082 CauseID: 1557137092 OtherID: 1363323810 JT: Japanese Journal of Applied Physics MD: Shigeyama,50,5s1,505,2011,Prediction of Stress Induced Voiding Reliability in Cu Damascene Interconnect by Computer Aided Vacancy Migration Analysis DOI: 10.1143/JJAP.50.05EA05(Journal) (6692082-N) DOI: 10.7567/JJAP.50.05EA05(Journal) ========================================================== Created: 2023-02-01 12:51:32 ConfID: 6716658 CauseID: 1560041280 OtherID: 1363321301 JT: Japanese Journal of Applied Physics MD: Kinoshita,51,8s1,804,2012,Isobutane/N2 Pulsed Radio Frequency Magnetron Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Carbon Nitride Films for Field Emission Applications DOI: 10.1143/JJAP.51.08HF04(Journal) (6716658-N) DOI: 10.7567/JJAP.51.08HF04(Journal) ========================================================== Created: 2023-01-05 12:05:05 ConfID: 6692083 CauseID: 1557137093 OtherID: 1363323713 JT: Japanese Journal of Applied Physics MD: Wang,50,4s,405,2011,New Observations and Impacts of Diameter-Dependent Annealing Effects in Silicon Nanowire Transistors DOI: 10.1143/JJAP.50.04DN05(Journal) (6692083-N) DOI: 10.7567/JJAP.50.04DN05(Journal) ========================================================== Created: 2023-02-01 12:51:32 ConfID: 6716659 CauseID: 1560041281 OtherID: 1363321152 JT: Japanese Journal of Applied Physics MD: Iwaya,51,7s,724,2012,Development of High Precision Metal Micro-Electro-Mechanical-Systems Column for Portable Surface Acoustic Wave Gas Chromatograph DOI: 10.1143/JJAP.51.07GC24(Journal) (6716659-N) DOI: 10.7567/JJAP.51.07GC24(Journal) ========================================================== Created: 2023-01-05 12:05:05 ConfID: 6692080 CauseID: 1557137090 OtherID: 1363323666 JT: Japanese Journal of Applied Physics MD: Yokoyama,50,4s,406,2011,Highly Efficient White Organic Light-Emitting Diodes with a p–i–n Tandem Structure DOI: 10.1143/JJAP.50.04DK06(Journal) (6692080-N) DOI: 10.7567/JJAP.50.04DK06(Journal) ========================================================== Created: 2023-02-01 12:51:31 ConfID: 6716656 CauseID: 1560041278 OtherID: 1363321277 JT: Japanese Journal of Applied Physics MD: Miyake,51,8s1,803,2012,High-Temperature Annealing by Subatmospheric-Pressure Radio-Frequency Capacitively Coupled Plasma DOI: 10.1143/JJAP.51.08HB03(Journal) (6716656-N) DOI: 10.7567/JJAP.51.08HB03(Journal) ========================================================== Created: 2023-01-05 12:05:09 ConfID: 6692081 CauseID: 1557137091 OtherID: 1363323724 JT: Japanese Journal of Applied Physics MD: Aikawa,50,4s,408,2011,Simple Fabrication Technique for Field-Effect Transistor Array Using As-Grown Single-Walled Carbon Nanotubes DOI: 10.1143/JJAP.50.04DN08(Journal) (6692081-N) DOI: 10.7567/JJAP.50.04DN08(Journal) ========================================================== Created: 2023-02-01 12:51:34 ConfID: 6716657 CauseID: 1560041277 OtherID: 1363321172 JT: Japanese Journal of Applied Physics MD: Shida,51,7s,705,2012,Evaluation of Rate of Change in Thickness of Heart Wall by Measuring Time Variation of Ultrasonic Integrated Backscatter during a Cardiac Cycle DOI: 10.1143/JJAP.51.07GF05(Journal) (6716657-N) DOI: 10.7567/JJAP.51.07GF05(Journal) ========================================================== Created: 2023-01-05 12:05:15 ConfID: 6692094 CauseID: 1557137128 OtherID: 1363323807 JT: Japanese Journal of Applied Physics MD: Verdonck,50,5s1,505,2011,Influence of the UV Cure on Advanced Plasma Enhanced Chemical Vapour Deposition Low-k Materials DOI: 10.1143/JJAP.50.05EB05(Journal) (6692094-N) DOI: 10.7567/JJAP.50.05EB05(Journal) ========================================================== Created: 2023-02-01 12:51:42 ConfID: 6716670 CauseID: 1560041312 OtherID: 1363321294 JT: Japanese Journal of Applied Physics MD: Lin,51,8s1,802,2012,Fast Deposition of Low-Temperature-Crystallized Silicon Films by Hybrid Nucleation DOI: 10.1143/JJAP.51.08HF02(Journal) (6716670-N) DOI: 10.7567/JJAP.51.08HF02(Journal) ========================================================== Created: 2023-01-05 12:05:15 ConfID: 6692095 CauseID: 1557137129 OtherID: 1363323706 JT: Japanese Journal of Applied Physics MD: Ho,50,4s,421,2011,Effects of Annealing on Polymer Solar Cells with High Polythiophene–Fullerene Concentrations DOI: 10.1143/JJAP.50.04DK21(Journal) (6692095-N) DOI: 10.7567/JJAP.50.04DK21(Journal) ========================================================== Created: 2023-02-01 12:51:45 ConfID: 6716671 CauseID: 1560041320 OtherID: 1363321160 JT: Japanese Journal of Applied Physics MD: Kadota,51,7s,721,2012,Sensitivity of Surface Acoustic Wave Magnetic Sensors Composed of Various Ni Electrode Structures DOI: 10.1143/JJAP.51.07GC21(Journal) (6716671-N) DOI: 10.7567/JJAP.51.07GC21(Journal) ========================================================== Created: 2023-01-05 12:05:14 ConfID: 6692092 CauseID: 1557137116 OtherID: 1363323738 JT: Japanese Journal of Applied Physics MD: Hoshina,50,4s,408,2011,Numerical Analysis of a Solar Cell with Tensile-Strained Ge as a Novel Narrow-Band-Gap Absorber DOI: 10.1143/JJAP.50.04DP08(Journal) (6692092-N) DOI: 10.7567/JJAP.50.04DP08(Journal) ========================================================== Created: 2023-02-01 12:51:44 ConfID: 6716668 CauseID: 1560041308 OtherID: 1363321174 JT: Japanese Journal of Applied Physics MD: Okawa,51,7s,706,2012,Influence of Air Humidity and Water Particles on Dust Control Using Ultrasonic Atomization DOI: 10.1143/JJAP.51.07GE06(Journal) (6716668-N) DOI: 10.7567/JJAP.51.07GE06(Journal) ========================================================== Created: 2023-01-05 12:05:14 ConfID: 6692093 CauseID: 1557137117 OtherID: 1363323745 JT: Japanese Journal of Applied Physics MD: Chen,50,5r,50207,2011,Fabrication and Piezoelectric Property of Highly Textured CaBi2Nb2O9 Ceramics by Tape Casting DOI: 10.1143/JJAP.50.050207(Journal) (6692093-N) DOI: 10.7567/JJAP.50.050207(Journal) ========================================================== Created: 2023-02-01 12:51:41 ConfID: 6716669 CauseID: 1560041310 OtherID: 1363321286 JT: Japanese Journal of Applied Physics MD: Kawakami,51,8s1,804,2012,Characteristics of TiO2 Thin Film Surfaces Treated by Helium and Air Dielectric Barrier Discharge Plasmas DOI: 10.1143/JJAP.51.08HB04(Journal) (6716669-N) DOI: 10.7567/JJAP.51.08HB04(Journal) ========================================================== Created: 2023-01-05 12:05:12 ConfID: 6692090 CauseID: 1557137114 OtherID: 1363323719 JT: Japanese Journal of Applied Physics MD: Ohdaira,50,4s,401,2011,Microstructure of Polycrystalline Silicon Films Formed through Explosive Crystallization Induced by Flash Lamp Annealing DOI: 10.1143/JJAP.50.04DP01(Journal) (6692090-N) DOI: 10.7567/JJAP.50.04DP01(Journal) ========================================================== Created: 2023-02-01 12:51:43 ConfID: 6716666 CauseID: 1560041306 OtherID: 1363321221 JT: Japanese Journal of Applied Physics MD: Kawada,51,7s,706,2012,Evaluation of Acoustic Simulation Using Wave Equation Finite Difference Time Domain Method with Compact Finite Differences DOI: 10.1143/JJAP.51.07GG06(Journal) (6716666-N) DOI: 10.7567/JJAP.51.07GG06(Journal) ========================================================== Created: 2023-01-05 12:05:13 ConfID: 6692091 CauseID: 1557137115 OtherID: 1363323742 JT: Japanese Journal of Applied Physics MD: Ichimura,50,5r,51002,2011,Band Alignment at the Cu2O/ZnO Heterojunction DOI: 10.1143/JJAP.50.051002(Journal) (6692091-N) DOI: 10.7567/JJAP.50.051002(Journal) ========================================================== Created: 2023-02-01 12:51:44 ConfID: 6716667 CauseID: 1560041307 OtherID: 1363321162 JT: Japanese Journal of Applied Physics MD: Cho,51,7s,709,2012,Effects of Power Density and TiO2 Dose in the Sonocatalytic Degradation of Diethyl Phthalate Using High Frequency DOI: 10.1143/JJAP.51.07GD09(Journal) (6716667-N) DOI: 10.7567/JJAP.51.07GD09(Journal) ========================================================== Created: 2023-01-05 12:05:10 ConfID: 6692088 CauseID: 1557137111 OtherID: 1363323715 JT: Japanese Journal of Applied Physics MD: Tanabe,50,4s,404,2011,Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors DOI: 10.1143/JJAP.50.04DN04(Journal) (6692088-N) DOI: 10.7567/JJAP.50.04DN04(Journal) ========================================================== Created: 2023-02-01 12:51:40 ConfID: 6716664 CauseID: 1560041303 OtherID: 1363321134 JT: Japanese Journal of Applied Physics MD: Sugawara,51,7s,705,2012,Analysis of Characteristics of Coupled Bending Vibrators Used as a Force Sensor DOI: 10.1143/JJAP.51.07GC05(Journal) (6716664-N) DOI: 10.7567/JJAP.51.07GC05(Journal) ========================================================== Created: 2023-01-05 12:05:11 ConfID: 6692089 CauseID: 1557137112 OtherID: 1363323748 JT: Japanese Journal of Applied Physics MD: Iijima,50,5r,50201,2011,Characteristics of La2O3- and Al2O3-Capped HfO2 Dielectric Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on (110)-Oriented Silicon Substrates DOI: 10.1143/JJAP.50.050201(Journal) (6692089-N) DOI: 10.7567/JJAP.50.050201(Journal) ========================================================== Created: 2023-02-01 12:51:43 ConfID: 6716665 CauseID: 1560041305 OtherID: 1363321287 JT: Japanese Journal of Applied Physics MD: Zaima,51,8s1,802,2012,Evaluation of Absolute Flux of Vacuum Ultraviolet Photons in an Electron Cyclotron Resonance Hydrogen Plasma: Comparison with Ion Flux DOI: 10.1143/JJAP.51.08HC02(Journal) (6716665-N) DOI: 10.7567/JJAP.51.08HC02(Journal) ========================================================== Created: 2023-01-05 12:04:36 ConfID: 6692038 CauseID: 1557137009 OtherID: 1363323656 JT: Japanese Journal of Applied Physics MD: Wang,50,4s,416,2011,Degradation Mechanism for Continuous-Wave Green Laser-Crystallized Polycrystalline Silicon n-Channel Thin-Film Transistors under Low Vertical-Field Hot-Carrier Stress with Different Laser Annealing Powers DOI: 10.1143/JJAP.50.04DH16(Journal) (6692038-N) DOI: 10.7567/JJAP.50.04DH16(Journal) ========================================================== Created: 2023-02-01 12:50:52 ConfID: 6716614 CauseID: 1560041170 OtherID: 1363321114 JT: Japanese Journal of Applied Physics MD: Takarada,51,7s,707,2012,Measurement of Liquid Viscosity and Density Using Single Piezoelectric Resonator with Two Vibration Modes DOI: 10.1143/JJAP.51.07GB07(Journal) (6716614-N) DOI: 10.7567/JJAP.51.07GB07(Journal) ========================================================== Created: 2023-01-05 12:04:37 ConfID: 6692039 CauseID: 1557137010 OtherID: 1363323714 JT: Japanese Journal of Applied Physics MD: Mori,50,4s,409,2011,Ellipsoidal Band Structure Effects on Maximum Ballistic Current in Silicon Nanowires DOI: 10.1143/JJAP.50.04DN09(Journal) (6692039-N) DOI: 10.7567/JJAP.50.04DN09(Journal) ========================================================== Created: 2023-02-01 12:50:52 ConfID: 6716615 CauseID: 1560041171 OtherID: 1363321006 JT: Japanese Journal of Applied Physics MD: Kaneko,51,6s,605,2012,Morphological Changes in Ultraviolet-Nanoimprinted Resin Patterns Caused by Ultraviolet-Curable Resins Absorbing Pentafluoropropane DOI: 10.1143/JJAP.51.06FJ05(Journal) (6716615-N) DOI: 10.7567/JJAP.51.06FJ05(Journal) ========================================================== Created: 2023-01-05 12:04:39 ConfID: 6692036 CauseID: 1557137007 OtherID: 1363323683 JT: Japanese Journal of Applied Physics MD: Han,50,4s,407,2011,Source Engineering for Tunnel Field-Effect Transistor: Elevated Source with Vertical Silicon–Germanium/Germanium Heterostructure DOI: 10.1143/JJAP.50.04DJ07(Journal) (6692036-N) DOI: 10.7567/JJAP.50.04DJ07(Journal) ========================================================== Created: 2023-02-01 12:50:40 ConfID: 6716612 CauseID: 1560041149 OtherID: 1363321023 JT: Japanese Journal of Applied Physics MD: Murakami,51,6s,611,2012,Parallelization of Catalytic Packed-Bed Microchannels with Pressure-Drop Microstructures for Gas–Liquid Multiphase Reactions DOI: 10.1143/JJAP.51.06FK11(Journal) (6716612-N) DOI: 10.7567/JJAP.51.06FK11(Journal) ========================================================== Created: 2023-01-05 12:04:36 ConfID: 6692037 CauseID: 1557137008 OtherID: 1363323682 JT: Japanese Journal of Applied Physics MD: Kawazu,50,4s,406,2011,Effects of Interface Grading on Electronic States and Optical Transitions in GaSb Type-II Quantum Dots in GaAs DOI: 10.1143/JJAP.50.04DJ06(Journal) (6692037-N) DOI: 10.7567/JJAP.50.04DJ06(Journal) ========================================================== Created: 2023-02-01 12:50:51 ConfID: 6716613 CauseID: 1560041168 OtherID: 1363321196 JT: Japanese Journal of Applied Physics MD: Kitamura,51,7s,708,2012,Accurate Estimation of Carotid Luminal Surface Roughness Using Ultrasonic Radio-Frequency Echo DOI: 10.1143/JJAP.51.07GF08(Journal) (6716613-N) DOI: 10.7567/JJAP.51.07GF08(Journal) ========================================================== Created: 2023-01-05 12:19:07 ConfID: 6692034 CauseID: 1557138863 OtherID: 1363322967 JT: Japanese Journal of Applied Physics MD: Yamada,50,11s,1104,2011,Emissivity Compensation Utilizing Radiance Distribution in Thermal Images for Temperature Measurement of Electronic Devices DOI: 10.1143/JJAP.50.11RE04(Journal) (6692034-N) DOI: 10.7567/JJAP.50.11RE04(Journal) ========================================================== Created: 2023-02-01 12:50:45 ConfID: 6716610 CauseID: 1560041156 OtherID: 1363321181 JT: Japanese Journal of Applied Physics MD: Asami,51,7s,707,2012,Characteristics of Hole Machining of Brittle Material by Ultrasonic Complex Vibration DOI: 10.1143/JJAP.51.07GE07(Journal) (6716610-N) DOI: 10.7567/JJAP.51.07GE07(Journal) ========================================================== Created: 2023-01-05 12:19:08 ConfID: 6692035 CauseID: 1557138864 OtherID: 1363322979 JT: Japanese Journal of Applied Physics MD: Kim,50,11s,1101,2011,Characteristics of Si Solar Cells with the Addition of Frits and Additives to Al Pastes DOI: 10.1143/JJAP.50.11RF01(Journal) (6692035-N) DOI: 10.7567/JJAP.50.11RF01(Journal) ========================================================== Created: 2023-02-01 12:50:46 ConfID: 6716611 CauseID: 1560041159 OtherID: 1363321140 JT: Japanese Journal of Applied Physics MD: Nakanishi,51,7s,707,2012,Coaxial Vibratory Gyroscope Using Two Pairs of Degenerate Modes DOI: 10.1143/JJAP.51.07GC07(Journal) (6716611-N) DOI: 10.7567/JJAP.51.07GC07(Journal) ========================================================== Created: 2023-01-05 12:18:26 ConfID: 6692032 CauseID: 1557138794 OtherID: 1363322969 JT: Japanese Journal of Applied Physics MD: Xu,50,11s,1102,2011,Inorganic Materials Database for Exploring the Nature of Material DOI: 10.1143/JJAP.50.11RH02(Journal) (6692032-N) DOI: 10.7567/JJAP.50.11RH02(Journal) ========================================================== Created: 2023-02-01 12:50:41 ConfID: 6716608 CauseID: 1560041151 OtherID: 1363321043 JT: Japanese Journal of Applied Physics MD: Ishiyama,51,6s,619,2012,Effects of Specimen Dimensions on Adhesive Shear Strength between a Microsized SU-8 Column and a Silicon Substrate DOI: 10.1143/JJAP.51.06FL19(Journal) (6716608-N) DOI: 10.7567/JJAP.51.06FL19(Journal) ========================================================== Created: 2023-01-05 12:18:30 ConfID: 6692033 CauseID: 1557138800 OtherID: 1363322955 JT: Japanese Journal of Applied Physics MD: Sato,50,11s,1101,2011,Representation of the Viscosity of Molten Alloy as a Function of the Composition and Temperature DOI: 10.1143/JJAP.50.11RD01(Journal) (6692033-N) DOI: 10.7567/JJAP.50.11RD01(Journal) ========================================================== Created: 2023-02-01 12:50:42 ConfID: 6716609 CauseID: 1560041153 OtherID: 1363321139 JT: Japanese Journal of Applied Physics MD: Horinouchi,51,7s,715,2012,Evaluation of Closed Stress Corrosion Cracks in Ni-Based Alloy Weld Metal Using Subharmonic Phased Array DOI: 10.1143/JJAP.51.07GB15(Journal) (6716609-N) DOI: 10.7567/JJAP.51.07GB15(Journal) ========================================================== Created: 2023-01-05 12:04:43 ConfID: 6692046 CauseID: 1557137018 OtherID: 1363323679 JT: Japanese Journal of Applied Physics MD: Kambara,50,4s,405,2011,Simulation Study of Charge Modulation in Coupled Quantum Dots in Silicon DOI: 10.1143/JJAP.50.04DJ05(Journal) (6692046-N) DOI: 10.7567/JJAP.50.04DJ05(Journal) ========================================================== Created: 2023-02-01 12:51:03 ConfID: 6716622 CauseID: 1560041192 OtherID: 1363321039 JT: Japanese Journal of Applied Physics MD: Li,51,6s,610,2012,High-Sensitivity Fiber-Optic Fabry–Perot Interferometer Temperature Sensor DOI: 10.1143/JJAP.51.06FL10(Journal) (6716622-N) DOI: 10.7567/JJAP.51.06FL10(Journal) ========================================================== Created: 2023-01-05 12:19:19 ConfID: 6692047 CauseID: 1557138882 OtherID: 1363322977 JT: Japanese Journal of Applied Physics MD: Abe,50,11s,1101,2011,Specific Heat Capacity Measurement of Single-Crystalline Silicon as New Reference Material DOI: 10.1143/JJAP.50.11RG01(Journal) (6692047-N) DOI: 10.7567/JJAP.50.11RG01(Journal) ========================================================== Created: 2023-02-01 12:51:04 ConfID: 6716623 CauseID: 1560041195 OtherID: 1363321299 JT: Japanese Journal of Applied Physics MD: Takenaka,51,8s1,805,2012,Low-Temperature Deposition of Zinc Oxide Film by Plasma-Assisted Mist Chemical Vapor Deposition DOI: 10.1143/JJAP.51.08HF05(Journal) (6716623-N) DOI: 10.7567/JJAP.51.08HF05(Journal) ========================================================== Created: 2023-01-05 12:04:42 ConfID: 6692044 CauseID: 1557137016 OtherID: 1363323675 JT: Japanese Journal of Applied Physics MD: Jeong,50,4s,409,2011,Influences of Intensity of Electric Field on Properties of Poly(vinylidene fluoride–tetrafluoroethylene) Thin Films during Annealing Process DOI: 10.1143/JJAP.50.04DK09(Journal) (6692044-N) DOI: 10.7567/JJAP.50.04DK09(Journal) ========================================================== Created: 2023-02-01 12:50:56 ConfID: 6716620 CauseID: 1560041184 OtherID: 1363321180 JT: Japanese Journal of Applied Physics MD: Zhang,51,7s,703,2012,Simultaneous Multispectral Coded Excitation Using Gold Codes for Photoacoustic Imaging DOI: 10.1143/JJAP.51.07GF03(Journal) (6716620-N) DOI: 10.7567/JJAP.51.07GF03(Journal) ========================================================== Created: 2023-01-05 12:04:42 ConfID: 6692045 CauseID: 1557137017 OtherID: 1363323684 JT: Japanese Journal of Applied Physics MD: Manaka,50,4s,412,2011,Evaluation of Carrier Density in Organic Field-Effect Transistor by Charge Modulated Spectroscopy DOI: 10.1143/JJAP.50.04DK12(Journal) (6692045-N) DOI: 10.7567/JJAP.50.04DK12(Journal) ========================================================== Created: 2023-02-01 12:50:44 ConfID: 6716621 CauseID: 1560041147 OtherID: 1363321031 JT: Japanese Journal of Applied Physics MD: Song,51,6s,618,2012,Square-Patterned Narrow-Band Infrared Emitter for Filter Less Infrared Gas Sensor DOI: 10.1143/JJAP.51.06FL18(Journal) (6716621-N) DOI: 10.7567/JJAP.51.06FL18(Journal) ========================================================== Created: 2023-01-05 12:19:16 ConfID: 6692042 CauseID: 1557138880 OtherID: 1363322966 JT: Japanese Journal of Applied Physics MD: Ohmura,50,11s,1103,2011,Estimation Method for Attenuation Coefficient of Thermal Radiation in Thermal Insulators by Using Thermal Conductivity DOI: 10.1143/JJAP.50.11RE03(Journal) (6692042-N) DOI: 10.7567/JJAP.50.11RE03(Journal) ========================================================== Created: 2023-02-01 12:50:59 ConfID: 6716618 CauseID: 1560041180 OtherID: 1363321173 JT: Japanese Journal of Applied Physics MD: Zenbutsu,51,7s,704,2012,Verification of Ultrasonic Image Fusion Technique for Laparoscopic Surgery DOI: 10.1143/JJAP.51.07GF04(Journal) (6716618-N) DOI: 10.7567/JJAP.51.07GF04(Journal) ========================================================== Created: 2023-01-05 12:04:40 ConfID: 6692043 CauseID: 1557137015 OtherID: 1363323652 JT: Japanese Journal of Applied Physics MD: Chen,50,4s,411,2011,Growth of Semipolar InN(1013) on LaAlO3(112) Substrate DOI: 10.1143/JJAP.50.04DH11(Journal) (6692043-N) DOI: 10.7567/JJAP.50.04DH11(Journal) ========================================================== Created: 2023-02-01 12:50:55 ConfID: 6716619 CauseID: 1560041181 OtherID: 1363321190 JT: Japanese Journal of Applied Physics MD: Hotehama,51,7s,721,2012,Propagation Velocity of Bone-Conducted Ultrasound in the Human Head DOI: 10.1143/JJAP.51.07GF21(Journal) (6716619-N) DOI: 10.7567/JJAP.51.07GF21(Journal) ========================================================== Created: 2023-01-05 12:19:15 ConfID: 6692040 CauseID: 1557138878 OtherID: 1363322972 JT: Japanese Journal of Applied Physics MD: Nagano,50,11s,1102,2011,Small Loop Heat Pipe with Plastic Wick for Electronics Cooling DOI: 10.1143/JJAP.50.11RF02(Journal) (6692040-N) DOI: 10.7567/JJAP.50.11RF02(Journal) ========================================================== Created: 2023-02-01 12:50:53 ConfID: 6716616 CauseID: 1560041173 OtherID: 1363321158 JT: Japanese Journal of Applied Physics MD: Kobayashi,51,7s,710,2012,Effluence of Internal Substances from Pluronic Micelle Using Ultrasound DOI: 10.1143/JJAP.51.07GD10(Journal) (6716616-N) DOI: 10.7567/JJAP.51.07GD10(Journal) ========================================================== Created: 2023-01-05 12:04:37 ConfID: 6692041 CauseID: 1557137011 OtherID: 1363323712 JT: Japanese Journal of Applied Physics MD: Pu,50,4s,410,2011,Performance Investigation on p-Type Si-, Ge-, and Ge–Si Core–Shell Nanowire Schottky Barrier Transistors DOI: 10.1143/JJAP.50.04DN10(Journal) (6692041-N) DOI: 10.7567/JJAP.50.04DN10(Journal) ========================================================== Created: 2023-02-01 12:50:54 ConfID: 6716617 CauseID: 1560041174 OtherID: 1363321008 JT: Japanese Journal of Applied Physics MD: Kaneko,51,6s,602,2012,Improvement of Electrical Stimulation Protocol for Simultaneous Measurement of Extracellular Potential with On-Chip Multi-Electrode Array System DOI: 10.1143/JJAP.51.06FK02(Journal) (6716617-N) DOI: 10.7567/JJAP.51.06FK02(Journal) ========================================================== Created: 2023-01-05 12:04:48 ConfID: 6692054 CauseID: 1557137032 OtherID: 1363323703 JT: Japanese Journal of Applied Physics MD: Wu,50,4s,423,2011,Ultraviolet-Patternable Polymer Insulator for Organic Thin-Film Transistors on Flexible Substrates DOI: 10.1143/JJAP.50.04DK23(Journal) (6692054-N) DOI: 10.7567/JJAP.50.04DK23(Journal) ========================================================== Created: 2023-02-01 12:51:06 ConfID: 6716630 CauseID: 1560041210 OtherID: 1363321086 JT: Japanese Journal of Applied Physics MD: Kakio,51,7s,701,2012,Surface Acoustic Wave Properties of Amorphous Ta2O5 and Nb2O5 Thin Films Prepared by Radio Frequency Sputtering DOI: 10.1143/JJAP.51.07GA01(Journal) (6716630-N) DOI: 10.7567/JJAP.51.07GA01(Journal) ========================================================== Created: 2023-01-05 12:04:48 ConfID: 6692055 CauseID: 1557137033 OtherID: 1363323671 JT: Japanese Journal of Applied Physics MD: Ou-Yang,50,4s,410,2011,Function of Interfacial Dipole Monolayer in Organic Field Effect Transistors DOI: 10.1143/JJAP.50.04DK10(Journal) (6692055-N) DOI: 10.7567/JJAP.50.04DK10(Journal) ========================================================== Created: 2023-02-01 12:51:07 ConfID: 6716631 CauseID: 1560041212 OtherID: 1363321145 JT: Japanese Journal of Applied Physics MD: Saito,51,7s,701,2012,Second Harmonic Component in Focused Gaussian Beam Propagating through Nonuniform Sound-Speed Layer DOI: 10.1143/JJAP.51.07GD01(Journal) (6716631-N) DOI: 10.7567/JJAP.51.07GD01(Journal) ========================================================== Created: 2023-01-05 12:04:47 ConfID: 6692052 CauseID: 1557137030 OtherID: 1363323708 JT: Japanese Journal of Applied Physics MD: Han,50,4s,417,2011,Fabrication of Sol–Gel Alumina Dielectric for Low-Voltage Operating Pentacene Transistor DOI: 10.1143/JJAP.50.04DK17(Journal) (6692052-N) DOI: 10.7567/JJAP.50.04DK17(Journal) ========================================================== Created: 2023-02-01 12:51:08 ConfID: 6716628 CauseID: 1560041206 OtherID: 1363321106 JT: Japanese Journal of Applied Physics MD: Fukuda,51,7s,706,2012,Detection of Second-Harmonic Components of Lamb Waves Generated from Fatigue Plate Using a Double-Layered Piezoelectric Transducer DOI: 10.1143/JJAP.51.07GB06(Journal) (6716628-N) DOI: 10.7567/JJAP.51.07GB06(Journal) ========================================================== Created: 2023-01-05 12:04:47 ConfID: 6692053 CauseID: 1557137031 OtherID: 1363323693 JT: Japanese Journal of Applied Physics MD: Heck,50,4s,420,2011,Oriented Polyfluorene Films Dye-Doped for Whitening of Polarized Electroluminescent Devices DOI: 10.1143/JJAP.50.04DK20(Journal) (6692053-N) DOI: 10.7567/JJAP.50.04DK20(Journal) ========================================================== Created: 2023-02-01 12:51:09 ConfID: 6716629 CauseID: 1560041208 OtherID: 1363321315 JT: Japanese Journal of Applied Physics MD: Kong,51,8s2,808,2012,Sequential Two-Dimensional Partial Response Maximum Likelihood Detection Scheme with Constant-Weight Constraint Code for Holographic Data Storage Systems DOI: 10.1143/JJAP.51.08JB08(Journal) (6716629-N) DOI: 10.7567/JJAP.51.08JB08(Journal) ========================================================== Created: 2023-01-05 12:04:45 ConfID: 6692050 CauseID: 1557137027 OtherID: 1363323730 JT: Japanese Journal of Applied Physics MD: Kakue,50,5r,50205,2011,Moving Picture Recording and Observation of Visible Femtosecond Light Pulse Propagation DOI: 10.1143/JJAP.50.050205(Journal) (6692050-N) DOI: 10.7567/JJAP.50.050205(Journal) ========================================================== Created: 2023-02-01 12:51:01 ConfID: 6716626 CauseID: 1560041198 OtherID: 1363321042 JT: Japanese Journal of Applied Physics MD: Kiso,51,6s,604,2012,High Quality Factor 80 MHz Microelectromechanical Systems Resonator Utilizing Torsional-to-Transverse Vibration Conversion DOI: 10.1143/JJAP.51.06FL04(Journal) (6716626-N) DOI: 10.7567/JJAP.51.06FL04(Journal) ========================================================== Created: 2023-01-05 12:04:46 ConfID: 6692051 CauseID: 1557137029 OtherID: 1363323685 JT: Japanese Journal of Applied Physics MD: Weis,50,4s,403,2011,Grain Boundary Effect on Charge Transport in Pentacene Thin Films DOI: 10.1143/JJAP.50.04DK03(Journal) (6692051-N) DOI: 10.7567/JJAP.50.04DK03(Journal) ========================================================== Created: 2023-02-01 12:51:05 ConfID: 6716627 CauseID: 1560041205 OtherID: 1363321156 JT: Japanese Journal of Applied Physics MD: Na,51,7s,711,2012,Sonophotolytic Degradation of Estriol at Various Ultraviolet Wavelength in Aqueous Solution DOI: 10.1143/JJAP.51.07GD11(Journal) (6716627-N) DOI: 10.7567/JJAP.51.07GD11(Journal) ========================================================== Created: 2023-01-05 12:04:43 ConfID: 6692048 CauseID: 1557137019 OtherID: 1363323669 JT: Japanese Journal of Applied Physics MD: Yamashita,50,4s,402,2011,Computational Study on Carrier Injection in Ca/Poly(9,9'-dioctylfluorene) Interface by Using Quantum Chemistry and Monte Carlo Methods DOI: 10.1143/JJAP.50.04DK02(Journal) (6692048-N) DOI: 10.7567/JJAP.50.04DK02(Journal) ========================================================== Created: 2023-02-01 12:51:04 ConfID: 6716624 CauseID: 1560041196 OtherID: 1363321297 JT: Japanese Journal of Applied Physics MD: Blajan,51,8s1,803,2012,Spatial Distribution of Light Emission in Microplasma under 100 µm Gaps DOI: 10.1143/JJAP.51.08HC03(Journal) (6716624-N) DOI: 10.7567/JJAP.51.08HC03(Journal) ========================================================== Created: 2023-01-05 12:04:44 ConfID: 6692049 CauseID: 1557137020 OtherID: 1363323692 JT: Japanese Journal of Applied Physics MD: Yoshida,50,4s,416,2011,Printed Electrode for All-Printed Polymer Diode DOI: 10.1143/JJAP.50.04DK16(Journal) (6692049-N) DOI: 10.7567/JJAP.50.04DK16(Journal) ========================================================== Created: 2023-02-01 12:51:01 ConfID: 6716625 CauseID: 1560041199 OtherID: 1363321159 JT: Japanese Journal of Applied Physics MD: Uchida,51,7s,703,2012,Measurement of Spatial Distribution in Vertical Direction of Cavitation Generation by Using High Resolution Cavitation Sensor DOI: 10.1143/JJAP.51.07GD03(Journal) (6716625-N) DOI: 10.7567/JJAP.51.07GD03(Journal) ========================================================== Created: 2023-01-05 12:04:53 ConfID: 6692062 CauseID: 1557137044 OtherID: 1363323722 JT: Japanese Journal of Applied Physics MD: Jung,50,4s,402,2011,In situ Observation of Polycrystalline Silicon Thin Films Grown Using Aluminum-Doped Zinc Oxide on Glass Substrate by the Aluminum-Induced Crystallization DOI: 10.1143/JJAP.50.04DP02(Journal) (6692062-N) DOI: 10.7567/JJAP.50.04DP02(Journal) ========================================================== Created: 2023-02-01 12:51:15 ConfID: 6716638 CauseID: 1560041230 OtherID: 1363321170 JT: Japanese Journal of Applied Physics MD: Cui,51,7s,713,2012,Sonochemical Oxidation of Cyanide Using Potassium Peroxydisulfate as an Oxidizing Agent DOI: 10.1143/JJAP.51.07GD13(Journal) (6716638-N) DOI: 10.7567/JJAP.51.07GD13(Journal) ========================================================== Created: 2023-01-05 12:04:54 ConfID: 6692063 CauseID: 1557137045 OtherID: 1363323737 JT: Japanese Journal of Applied Physics MD: Tachibana,50,4s,409,2011,Material Research on High-Quality Passivation Layers with Controlled Fixed Charge for Crystalline Silicon Solar Cells DOI: 10.1143/JJAP.50.04DP09(Journal) (6692063-N) DOI: 10.7567/JJAP.50.04DP09(Journal) ========================================================== Created: 2023-02-01 12:51:15 ConfID: 6716639 CauseID: 1560041231 OtherID: 1363321154 JT: Japanese Journal of Applied Physics MD: Sakamoto,51,7s,722,2012,Continuous Measurement of Multiple Gases Using Ball Surface Acoustic Wave Gas Chromatograph DOI: 10.1143/JJAP.51.07GC22(Journal) (6716639-N) DOI: 10.7567/JJAP.51.07GC22(Journal) ========================================================== Created: 2023-01-05 12:04:51 ConfID: 6692060 CauseID: 1557137042 OtherID: 1363323702 JT: Japanese Journal of Applied Physics MD: Yamazaki,50,4s,402,2011,Compact Electrochemical System Using On-Chip Sensor Electrodes and Integrated Devices DOI: 10.1143/JJAP.50.04DL02(Journal) (6692060-N) DOI: 10.7567/JJAP.50.04DL02(Journal) ========================================================== Created: 2023-02-01 12:51:11 ConfID: 6716636 CauseID: 1560041221 OtherID: 1363321155 JT: Japanese Journal of Applied Physics MD: Shinashi,51,7s,705,2012,Sonochemical Effect Using Ultrasonic Atomizer at 2.4 MHz DOI: 10.1143/JJAP.51.07GD05(Journal) (6716636-N) DOI: 10.7567/JJAP.51.07GD05(Journal) ========================================================== Created: 2023-01-05 12:04:52 ConfID: 6692061 CauseID: 1557137043 OtherID: 1363323773 JT: Japanese Journal of Applied Physics MD: Aono,50,5r,55601,2011,High-Throughput Characterization Method for Crystallization Temperature of Integrated Thin Film Amorphous Alloys Using Thermography DOI: 10.1143/JJAP.50.055601(Journal) (6692061-N) DOI: 10.7567/JJAP.50.055601(Journal) ========================================================== Created: 2023-02-01 12:51:13 ConfID: 6716637 CauseID: 1560041226 OtherID: 1363321116 JT: Japanese Journal of Applied Physics MD: Tarumi,51,7s,703,2012,Acoustic Resonance of a Two-Dimensional Isotropic Medium Studied Using Airy Stress Function DOI: 10.1143/JJAP.51.07GA03(Journal) (6716637-N) DOI: 10.7567/JJAP.51.07GA03(Journal) ========================================================== Created: 2023-01-05 12:04:50 ConfID: 6692058 CauseID: 1557137040 OtherID: 1363323716 JT: Japanese Journal of Applied Physics MD: Shin,50,4s,406,2011,Single-Electron Transport through Semiconducting Nanowires: A Comparison between Silicon and Germanium DOI: 10.1143/JJAP.50.04DN06(Journal) (6692058-N) DOI: 10.7567/JJAP.50.04DN06(Journal) ========================================================== Created: 2023-02-01 12:51:12 ConfID: 6716634 CauseID: 1560041222 OtherID: 1363321355 JT: Japanese Journal of Applied Physics MD: Ichii,51,8s3,808,2012,Frequency Modulation Atomic Force Microscopy in Ionic Liquid Using Quartz Tuning Fork Sensors DOI: 10.1143/JJAP.51.08KB08(Journal) (6716634-N) DOI: 10.7567/JJAP.51.08KB08(Journal) ========================================================== Created: 2023-01-05 12:04:51 ConfID: 6692059 CauseID: 1557137041 OtherID: 1363323678 JT: Japanese Journal of Applied Physics MD: Takahashi,50,4s,403,2011,Singlet–Triplet Mixing Due to g-Factor Mismatch in Double Quantum Dot DOI: 10.1143/JJAP.50.04DJ03(Journal) (6692059-N) DOI: 10.7567/JJAP.50.04DJ03(Journal) ========================================================== Created: 2023-02-01 12:51:11 ConfID: 6716635 CauseID: 1560041220 OtherID: 1363321183 JT: Japanese Journal of Applied Physics MD: Doshida,51,7s,710,2012,Properties of Miniature Cantilever-Type Ultrasonic Motor Using Lead-Free Array-Type Multilayer Piezoelectric Ceramics of (Sr,Ca)2NaNb5O15 under High Input Power DOI: 10.1143/JJAP.51.07GE10(Journal) (6716635-N) DOI: 10.7567/JJAP.51.07GE10(Journal) ========================================================== Created: 2023-01-05 12:04:49 ConfID: 6692056 CauseID: 1557137034 OtherID: 1363323701 JT: Japanese Journal of Applied Physics MD: Shishido,50,4s,401,2011,Polarization Analyzing Image Sensor with On-Chip Metal Wire Grid Polarizer in 65-nm Standard Complementary Metal Oxide Semiconductor Process DOI: 10.1143/JJAP.50.04DL01(Journal) (6692056-N) DOI: 10.7567/JJAP.50.04DL01(Journal) ========================================================== Created: 2023-02-01 12:51:10 ConfID: 6716632 CauseID: 1560041218 OtherID: 1363321184 JT: Japanese Journal of Applied Physics MD: Tanaka,51,7s,718,2012,Blood-Mimicking Fluid for Testing Ultrasonic Diagnostic Instrument DOI: 10.1143/JJAP.51.07GF18(Journal) (6716632-N) DOI: 10.7567/JJAP.51.07GF18(Journal) ========================================================== Created: 2023-01-05 12:04:50 ConfID: 6692057 CauseID: 1557137039 OtherID: 1363323667 JT: Japanese Journal of Applied Physics MD: Sugawara,50,4s,411,2011,A Proposal of High Performance and Highly Fabricable Complementary Organic Thin Film Transistor Structure DOI: 10.1143/JJAP.50.04DK11(Journal) (6692057-N) DOI: 10.7567/JJAP.50.04DK11(Journal) ========================================================== Created: 2023-02-01 12:51:10 ConfID: 6716633 CauseID: 1560041219 OtherID: 1363321103 JT: Japanese Journal of Applied Physics MD: Habib,51,7s,705,2012,Imaging of Acoustic Waves in Piezoelectric Ceramics by Coulomb Coupling DOI: 10.1143/JJAP.51.07GB05(Journal) (6716633-N) DOI: 10.7567/JJAP.51.07GB05(Journal) ========================================================== Created: 2023-01-05 12:04:24 ConfID: 6692006 CauseID: 1557136971 OtherID: 1363323676 JT: Japanese Journal of Applied Physics MD: Juang,50,4s,404,2011,Power Efficiency Improvement of White Phosphorescent Organic Light-Emitting Diode with Thin Double-Emitting Layers and Hole-Trapping Mechanism DOI: 10.1143/JJAP.50.04DK04(Journal) (6692006-N) DOI: 10.7567/JJAP.50.04DK04(Journal) ========================================================== Created: 2023-02-01 12:50:16 ConfID: 6716582 CauseID: 1560041091 OtherID: 1363320975 JT: Japanese Journal of Applied Physics MD: Elborg,51,6s,615,2012,Two-Color Photoexcitation in a GaNAs/AlGaAs Quantum Well Solar Cell DOI: 10.1143/JJAP.51.06FF15(Journal) (6716582-N) DOI: 10.7567/JJAP.51.06FF15(Journal) ========================================================== Created: 2023-01-05 12:04:25 ConfID: 6692007 CauseID: 1557136979 OtherID: 1363323672 JT: Japanese Journal of Applied Physics MD: Zhang,50,4s,413,2011,Investigation of the Voltage Establishment and Relaxation Processes in a Double-Layer Device by Time-Resolved Optical Second-Harmonic Generation DOI: 10.1143/JJAP.50.04DK13(Journal) (6692007-N) DOI: 10.7567/JJAP.50.04DK13(Journal) ========================================================== Created: 2023-02-01 12:50:17 ConfID: 6716583 CauseID: 1560041092 OtherID: 1363320997 JT: Japanese Journal of Applied Physics MD: Matsuura,51,6s,607,2012,Utilization of Size-Controlled Squid Ink Particles as Enhancer for the Porosity of Titania Electrode in Dye-Sensitized Solar Cell DOI: 10.1143/JJAP.51.06FG07(Journal) (6716583-N) DOI: 10.7567/JJAP.51.06FG07(Journal) ========================================================== Created: 2023-01-05 12:04:24 ConfID: 6692004 CauseID: 1557136970 OtherID: 1363323645 JT: Japanese Journal of Applied Physics MD: Handa,50,4s,402,2011,Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations DOI: 10.1143/JJAP.50.04DH02(Journal) (6692004-N) DOI: 10.7567/JJAP.50.04DH02(Journal) ========================================================== Created: 2023-02-01 12:50:15 ConfID: 6716580 CauseID: 1560041087 OtherID: 1363321115 JT: Japanese Journal of Applied Physics MD: Zempo,51,7s,709,2012,Direction of Arrival Estimation Based on Delayed-Sum Method in Reverberation Environment DOI: 10.1143/JJAP.51.07GB09(Journal) (6716580-N) DOI: 10.7567/JJAP.51.07GB09(Journal) ========================================================== Created: 2023-01-05 12:17:11 ConfID: 6692005 CauseID: 1557138666 OtherID: 1363324691 JT: Japanese Journal of Applied Physics MD: Yamamoto,50,9s2,904,2011,Microwave Absorbing Property of Stacked Polypyrrole-Coated Nonwoven Textiles DOI: 10.1143/JJAP.50.09NF04(Journal) (6692005-N) DOI: 10.7567/JJAP.50.09NF04(Journal) ========================================================== Created: 2023-02-01 12:50:15 ConfID: 6716581 CauseID: 1560041089 OtherID: 1363321110 JT: Japanese Journal of Applied Physics MD: Hsu,51,7s,704,2012,Switchable Frequency Gaps in Piezoelectric Phononic Crystal Slabs DOI: 10.1143/JJAP.51.07GA04(Journal) (6716581-N) DOI: 10.7567/JJAP.51.07GA04(Journal) ========================================================== Created: 2023-01-05 12:16:55 ConfID: 6692002 CauseID: 1557138639 OtherID: 1363324583 JT: Japanese Journal of Applied Physics MD: Chang,50,9s1,901,2011,Phase Transition Mastering Technology for the Stamper of Blu-ray Recordable Disc DOI: 10.1143/JJAP.50.09MD01(Journal) (6692002-N) DOI: 10.7567/JJAP.50.09MD01(Journal) ========================================================== Created: 2023-02-01 12:50:11 ConfID: 6716578 CauseID: 1560041077 OtherID: 1363320993 JT: Japanese Journal of Applied Physics MD: Ismail,51,6s,609,2012,Effect of Solvent on the Dielectric Properties of Nanocomposite Poly(methyl methacrylate)-Doped Titanium Dioxide Dielectric Films DOI: 10.1143/JJAP.51.06FG09(Journal) (6716578-N) DOI: 10.7567/JJAP.51.06FG09(Journal) ========================================================== Created: 2023-01-05 12:04:23 ConfID: 6692003 CauseID: 1557136969 OtherID: 1363323639 JT: Japanese Journal of Applied Physics MD: Amemiya,50,4s,413,2011,Design and Simulation of Silicon Ring Optical Modulator with p/n Junctions along Circumference DOI: 10.1143/JJAP.50.04DG13(Journal) (6692003-N) DOI: 10.7567/JJAP.50.04DG13(Journal) ========================================================== Created: 2023-02-01 12:50:13 ConfID: 6716579 CauseID: 1560041080 OtherID: 1363321024 JT: Japanese Journal of Applied Physics MD: Ono,51,6s,620,2012,Fabrication of Nickel Microlens Dies Using Hemispherical Resist Patterns as Electroplating Molds DOI: 10.1143/JJAP.51.06FL20(Journal) (6716579-N) DOI: 10.7567/JJAP.51.06FL20(Journal) ========================================================== Created: 2023-01-05 12:04:22 ConfID: 6692000 CauseID: 1557136967 OtherID: 1363323628 JT: Japanese Journal of Applied Physics MD: Lee,50,4s,406,2011,Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diodes with TiO2/SiO2 Reflector and Roughened GaOx Surface Film DOI: 10.1143/JJAP.50.04DG06(Journal) (6692000-N) DOI: 10.7567/JJAP.50.04DG06(Journal) ========================================================== Created: 2023-02-01 12:50:09 ConfID: 6716576 CauseID: 1560041071 OtherID: 1363320973 JT: Japanese Journal of Applied Physics MD: Andersen,51,6s,613,2012,Alignment and Use of Self-Assembled Peptide Nanotubes as Dry-Etching Mask DOI: 10.1143/JJAP.51.06FF13(Journal) (6716576-N) DOI: 10.7567/JJAP.51.06FF13(Journal) ========================================================== Created: 2023-01-05 12:04:23 ConfID: 6692001 CauseID: 1557136968 OtherID: 1363323699 JT: Japanese Journal of Applied Physics MD: Chen,50,4s,419,2011,High-Efficiency Electrophosphorescence Red Organic Light-Emitting Diodes Using a Thin 1,3-Bis[2-(2,2'-bipyridin-6-yl)-1,3,4-oxadiazol-5-yl]benzene Cleaving Layer in an Ir-Complex-Doped Emitter Layer DOI: 10.1143/JJAP.50.04DK19(Journal) (6692001-N) DOI: 10.7567/JJAP.50.04DK19(Journal) ========================================================== Created: 2023-02-01 12:50:10 ConfID: 6716577 CauseID: 1560041075 OtherID: 1363320999 JT: Japanese Journal of Applied Physics MD: Sonae,51,6s,606,2012,Hydrothermal Synthesis of Silicon-Based Hollow Nanostructures DOI: 10.1143/JJAP.51.06FG06(Journal) (6716577-N) DOI: 10.7567/JJAP.51.06FG06(Journal) ========================================================== Created: 2023-01-05 12:17:43 ConfID: 6692014 CauseID: 1557138725 OtherID: 1363324564 JT: Japanese Journal of Applied Physics MD: Wei,50,9s1,904,2011,Applications of the Heterojunction with Intrinsic Thin Layer Solar-Cell Structure on Photodetectors DOI: 10.1143/JJAP.50.09MA04(Journal) (6692014-N) DOI: 10.7567/JJAP.50.09MA04(Journal) ========================================================== Created: 2023-02-01 12:50:21 ConfID: 6716590 CauseID: 1560041102 OtherID: 1363321121 JT: Japanese Journal of Applied Physics MD: Hosoda,51,7s,705,2012,Accurate Viscosity Measurement of Ethanol Solution for Determination of Ultrasonic Relaxation Parameters DOI: 10.1143/JJAP.51.07GA05(Journal) (6716590-N) DOI: 10.7567/JJAP.51.07GA05(Journal) ========================================================== Created: 2023-01-05 12:17:48 ConfID: 6692015 CauseID: 1557138732 OtherID: 1363325474 JT: Japanese Journal of Applied Physics MD: Kaneko,50,10s,1006,2011,Relationship between Dipole Moment of Organic Compound Impurity in Liquid Crystal Field and Leakage Current of Liquid Crystal Cell DOI: 10.1143/JJAP.50.10PG06(Journal) (6692015-N) DOI: 10.7567/JJAP.50.10PG06(Journal) ========================================================== Created: 2023-02-01 12:50:25 ConfID: 6716591 CauseID: 1560041108 OtherID: 1363320985 JT: Japanese Journal of Applied Physics MD: Sakurai,51,6s,603,2012,Photoluminescence and X-ray Absorption Fine Structure Analysis of Sm-Doped TiO2 Thin Films DOI: 10.1143/JJAP.51.06FG03(Journal) (6716591-N) DOI: 10.7567/JJAP.51.06FG03(Journal) ========================================================== Created: 2023-01-05 12:17:40 ConfID: 6692012 CauseID: 1557138721 OtherID: 1363326710 JT: Japanese Journal of Applied Physics MD: Kimura,50,9s1,905,2011,Reducing Interlayer Crosstalk in Reading Multilayer Disc for Compact Optical Pickup Using Polarizing Filter DOI: 10.1143/JJAP.50.09MF05(Journal) (6692012-N) DOI: 10.7567/JJAP.50.09MF05(Journal) ========================================================== Created: 2023-02-01 12:50:21 ConfID: 6716588 CauseID: 1560041101 OtherID: 1363320996 JT: Japanese Journal of Applied Physics MD: Choi,51,6s,601,2012,Large-Area Nanotemplate Process and Its Application to Roll Imprint DOI: 10.1143/JJAP.51.06FJ01(Journal) (6716588-N) DOI: 10.7567/JJAP.51.06FJ01(Journal) ========================================================== Created: 2023-01-05 12:04:27 ConfID: 6692013 CauseID: 1557136982 OtherID: 1363323648 JT: Japanese Journal of Applied Physics MD: Nakamoto,50,4s,409,2011,Reduction of S-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Photoluminescence Spectroscopy Study DOI: 10.1143/JJAP.50.04DH09(Journal) (6692013-N) DOI: 10.7567/JJAP.50.04DH09(Journal) ========================================================== Created: 2023-02-01 12:50:20 ConfID: 6716589 CauseID: 1560041100 OtherID: 1363320974 JT: Japanese Journal of Applied Physics MD: Otsuka,51,6s,611,2012,Additional Electrochemical Treatment Effects on the Switching Characteristics of Anodic Porous Alumina Resistive Switching Memory DOI: 10.1143/JJAP.51.06FF11(Journal) (6716589-N) DOI: 10.7567/JJAP.51.06FF11(Journal) ========================================================== Created: 2023-01-05 12:17:31 ConfID: 6692010 CauseID: 1557138702 OtherID: 1363324581 JT: Japanese Journal of Applied Physics MD: Osawa,50,9s1,905,2011,Neural Network Equalizer Matched to Recording Code in Holographic Data Storage DOI: 10.1143/JJAP.50.09MB05(Journal) (6692010-N) DOI: 10.7567/JJAP.50.09MB05(Journal) ========================================================== Created: 2023-02-01 12:50:24 ConfID: 6716586 CauseID: 1560041097 OtherID: 1363320982 JT: Japanese Journal of Applied Physics MD: Yamauchi,51,6s,616,2012,Influence of Rapid Thermal Annealing and Substrate Terrace Width on Self-Organizing Formation of Periodic Straight Nanogroove Array on NiO(111) Epitaxial Thin Film DOI: 10.1143/JJAP.51.06FF16(Journal) (6716586-N) DOI: 10.7567/JJAP.51.06FF16(Journal) ========================================================== Created: 2023-01-05 12:04:27 ConfID: 6692011 CauseID: 1557136981 OtherID: 1363323646 JT: Japanese Journal of Applied Physics MD: Wakayama,50,4s,420,2011,Optical Crossing and Integration Using Hybrid Si-Wire/Silica Waveguides DOI: 10.1143/JJAP.50.04DG20(Journal) (6692011-N) DOI: 10.7567/JJAP.50.04DG20(Journal) ========================================================== Created: 2023-02-01 12:50:24 ConfID: 6716587 CauseID: 1560041098 OtherID: 1363321099 JT: Japanese Journal of Applied Physics MD: Tarumi,51,7s,702,2012,Low Temperature Elastic Constants and Piezoelectric Coefficients of LiNbO3 and LiTaO3: Resonant Ultrasound Spectroscopy Measurement and Lattice Dynamics Analysis DOI: 10.1143/JJAP.51.07GA02(Journal) (6716587-N) DOI: 10.7567/JJAP.51.07GA02(Journal) ========================================================== Created: 2023-01-05 12:17:27 ConfID: 6692008 CauseID: 1557138695 OtherID: 1363324607 JT: Japanese Journal of Applied Physics MD: Lan,50,9s1,904,2011,Broad Detecting Range of Objective-Based Surface Plasmon Resonance Sensor via Multilayer Structure DOI: 10.1143/JJAP.50.09MG04(Journal) (6692008-N) DOI: 10.7567/JJAP.50.09MG04(Journal) ========================================================== Created: 2023-02-01 12:50:18 ConfID: 6716584 CauseID: 1560041094 OtherID: 1363321122 JT: Japanese Journal of Applied Physics MD: Nishimura,51,7s,713,2012,Ultrasound Open Channel Flow-Speed Measurement Based on the Lateral Directional Echo Observations DOI: 10.1143/JJAP.51.07GB13(Journal) (6716584-N) DOI: 10.7567/JJAP.51.07GB13(Journal) ========================================================== Created: 2023-01-05 12:04:25 ConfID: 6692009 CauseID: 1557136980 OtherID: 1363323709 JT: Japanese Journal of Applied Physics MD: Ohshima,50,4s,414,2011,Direct Observation of Carrier Behavior Leading to Electroluminescence in Tetracene Field-Effect Transistor DOI: 10.1143/JJAP.50.04DK14(Journal) (6692009-N) DOI: 10.7567/JJAP.50.04DK14(Journal) ========================================================== Created: 2023-02-01 12:50:23 ConfID: 6716585 CauseID: 1560041096 OtherID: 1363320992 JT: Japanese Journal of Applied Physics MD: Yoo,51,6s,612,2012,Carrier Transport Mechanisms of Organic Bistable Devices Fabricated Utilizing Hybrid C60/Poly(methyl methacrylate) Nanocomposites DOI: 10.1143/JJAP.51.06FG12(Journal) (6716585-N) DOI: 10.7567/JJAP.51.06FG12(Journal) ========================================================== Created: 2023-01-05 12:04:30 ConfID: 6692022 CauseID: 1557136992 OtherID: 1363323657 JT: Japanese Journal of Applied Physics MD: Miyasaka,50,4s,412,2011,Graphite Thin Films Consisting of Nanograins of Multilayer Graphene on Sapphire Substrates Directly Grown by Alcohol Chemical Vapor Deposition DOI: 10.1143/JJAP.50.04DH12(Journal) (6692022-N) DOI: 10.7567/JJAP.50.04DH12(Journal) ========================================================== Created: 2023-02-01 12:50:31 ConfID: 6716598 CauseID: 1560041125 OtherID: 1363321193 JT: Japanese Journal of Applied Physics MD: Miwa,51,7s,713,2012,Tissue Viscoelasticity Measurement System by Simultaneous Multiple-Frequency Excitation DOI: 10.1143/JJAP.51.07GF13(Journal) (6716598-N) DOI: 10.7567/JJAP.51.07GF13(Journal) ========================================================== Created: 2023-01-05 12:04:30 ConfID: 6692023 CauseID: 1557136993 OtherID: 1363323653 JT: Japanese Journal of Applied Physics MD: Huang,50,4s,417,2011,Polarized Thermoreflectance and Reflectance Study of ReS2 and ReS2:Au Single Crystals DOI: 10.1143/JJAP.50.04DH17(Journal) (6692023-N) DOI: 10.7567/JJAP.50.04DH17(Journal) ========================================================== Created: 2023-02-01 12:50:32 ConfID: 6716599 CauseID: 1560041126 OtherID: 1363321133 JT: Japanese Journal of Applied Physics MD: Mimura,51,7s,713,2012,Improvement of Temperature Characteristics of Boundary Acoustic Wave Resonators Using Multilayered Electrodes DOI: 10.1143/JJAP.51.07GC13(Journal) (6716599-N) DOI: 10.7567/JJAP.51.07GC13(Journal) ========================================================== Created: 2023-01-05 12:04:33 ConfID: 6692020 CauseID: 1557136990 OtherID: 1363323698 JT: Japanese Journal of Applied Physics MD: Miyamoto,50,4s,408,2011,Differential Setup of Light-Addressable Potentiometric Sensor with an Enzyme Reactor in a Flow Channel DOI: 10.1143/JJAP.50.04DL08(Journal) (6692020-N) DOI: 10.7567/JJAP.50.04DL08(Journal) ========================================================== Created: 2023-02-01 12:50:34 ConfID: 6716596 CauseID: 1560041121 OtherID: 1363321036 JT: Japanese Journal of Applied Physics MD: Yeh,51,6s,603,2012,Transparent Solar Concentrator for Flat Panel Display DOI: 10.1143/JJAP.51.06FL03(Journal) (6716596-N) DOI: 10.7567/JJAP.51.06FL03(Journal) ========================================================== Created: 2023-01-05 12:04:34 ConfID: 6692021 CauseID: 1557136991 OtherID: 1363323636 JT: Japanese Journal of Applied Physics MD: Taniguchi,50,4s,411,2011,Transparent Oxide Thin-Film Transistors Using n-(In2O3)0.9(SnO2)0.1/InGaZnO4 Modulation-Doped Heterostructures DOI: 10.1143/JJAP.50.04DF11(Journal) (6692021-N) DOI: 10.7567/JJAP.50.04DF11(Journal) ========================================================== Created: 2023-02-01 12:50:31 ConfID: 6716597 CauseID: 1560041124 OtherID: 1363321009 JT: Japanese Journal of Applied Physics MD: Suzuki,51,6s,609,2012,Effective Linewidth Measurement of 45-nm-Half-Pitch Ultraviolet Nanoimprint Lithography Patterns by Scanning Electron Microscope Inspection and Extremely Shallow Si Etching DOI: 10.1143/JJAP.51.06FJ09(Journal) (6716597-N) DOI: 10.7567/JJAP.51.06FJ09(Journal) ========================================================== Created: 2023-01-05 12:04:29 ConfID: 6692018 CauseID: 1557136984 OtherID: 1363323654 JT: Japanese Journal of Applied Physics MD: Fujisawa,50,4s,403,2011,Growth and Characterization of a GaAs Quantum Well Buried in GaAsP/GaAs Vertical Heterostructure Nanowires by Selective-Area Metal Organic Vapor Phase Epitaxy DOI: 10.1143/JJAP.50.04DH03(Journal) (6692018-N) DOI: 10.7567/JJAP.50.04DH03(Journal) ========================================================== Created: 2023-02-01 12:50:27 ConfID: 6716594 CauseID: 1560041115 OtherID: 1363321161 JT: Japanese Journal of Applied Physics MD: Xu,51,7s,708,2012,Effects of Operational Conditions on 1,4-Dioxane Degradation by Combined Use of Ultrasound and Ozone Microbubbles DOI: 10.1143/JJAP.51.07GD08(Journal) (6716594-N) DOI: 10.7567/JJAP.51.07GD08(Journal) ========================================================== Created: 2023-01-05 12:04:29 ConfID: 6692019 CauseID: 1557136985 OtherID: 1363323690 JT: Japanese Journal of Applied Physics MD: Liu,50,4s,415,2011,Diffuser Micropump Structured with Extremely Flexible Diaphragm of 2-µm-thick Polyimide Film DOI: 10.1143/JJAP.50.04DK15(Journal) (6692019-N) DOI: 10.7567/JJAP.50.04DK15(Journal) ========================================================== Created: 2023-02-01 12:50:20 ConfID: 6716595 CauseID: 1560041099 OtherID: 1363321157 JT: Japanese Journal of Applied Physics MD: Hara,51,7s,723,2012,Experimental Study of Highly Sensitive Sensor Using a Surface Acoustic Wave Resonator for Wireless Strain Detection DOI: 10.1143/JJAP.51.07GC23(Journal) (6716595-N) DOI: 10.7567/JJAP.51.07GC23(Journal) ========================================================== Created: 2023-01-05 12:17:56 ConfID: 6692016 CauseID: 1557138744 OtherID: 1363324584 JT: Japanese Journal of Applied Physics MD: Urakawa,50,9s1,903,2011,Tracking Property of Adjacent Track Servo System for Optical Disk Drives DOI: 10.1143/JJAP.50.09MC03(Journal) (6692016-N) DOI: 10.7567/JJAP.50.09MC03(Journal) ========================================================== Created: 2023-02-01 12:50:29 ConfID: 6716592 CauseID: 1560041111 OtherID: 1363321124 JT: Japanese Journal of Applied Physics MD: Ohara,51,7s,718,2012,Enhancement of Selectivity in Nonlinear Ultrasonic Imaging of Closed Cracks Using Amplitude Difference Phased Array DOI: 10.1143/JJAP.51.07GB18(Journal) (6716592-N) DOI: 10.7567/JJAP.51.07GB18(Journal) ========================================================== Created: 2023-01-05 12:04:28 ConfID: 6692017 CauseID: 1557136983 OtherID: 1363323694 JT: Japanese Journal of Applied Physics MD: You,50,4s,422,2011,Silver-Nanoparticle-Assisted Photocurrent Generation in Polythiophene–Fullerene Thin Films DOI: 10.1143/JJAP.50.04DK22(Journal) (6692017-N) DOI: 10.7567/JJAP.50.04DK22(Journal) ========================================================== Created: 2023-02-01 12:50:25 ConfID: 6716593 CauseID: 1560041113 OtherID: 1363321127 JT: Japanese Journal of Applied Physics MD: Norose,51,7s,717,2012,Nondestructive Inspection for Steel Billet Using Phase-Modulated Signal by Gold Sequence for Improving Measurement Speed DOI: 10.1143/JJAP.51.07GB17(Journal) (6716593-N) DOI: 10.7567/JJAP.51.07GB17(Journal) ========================================================== Created: 2023-01-05 12:18:24 ConfID: 6692030 CauseID: 1557138788 OtherID: 1363322950 JT: Japanese Journal of Applied Physics MD: Kwon,50,11s,1102,2011,Evaluation System for Figure of Merit of Thermoelectric Devices DOI: 10.1143/JJAP.50.11RE02(Journal) (6692030-N) DOI: 10.7567/JJAP.50.11RE02(Journal) ========================================================== Created: 2023-02-01 12:50:44 ConfID: 6716606 CauseID: 1560041148 OtherID: 1363321108 JT: Japanese Journal of Applied Physics MD: Goto,51,7s,706,2012,Theoretical Study of Switching Characteristics of 40 and 100 Gbps Pulse Trains by Weighted Collinear Acoustooptic Switches DOI: 10.1143/JJAP.51.07GA06(Journal) (6716606-N) DOI: 10.7567/JJAP.51.07GA06(Journal) ========================================================== Created: 2023-01-05 12:04:38 ConfID: 6692031 CauseID: 1557137005 OtherID: 1363323664 JT: Japanese Journal of Applied Physics MD: Zhong,50,4s,404,2011,Improvement of Rectifying Property in Pt/TiOx/Pt by Controlling Oxidization of TiOx Layer DOI: 10.1143/JJAP.50.04DH04(Journal) (6692031-N) DOI: 10.7567/JJAP.50.04DH04(Journal) ========================================================== Created: 2023-02-01 12:50:41 ConfID: 6716607 CauseID: 1560041150 OtherID: 1363320995 JT: Japanese Journal of Applied Physics MD: Kim,51,6s,601,2012,Highly Sensitive Detection of Target Biomolecules on Cell Surface Using Gold Nanoparticle Conjugated with Aptamer Probe DOI: 10.1143/JJAP.51.06FH01(Journal) (6716607-N) DOI: 10.7567/JJAP.51.06FH01(Journal) ========================================================== Created: 2023-01-05 12:04:35 ConfID: 6692028 CauseID: 1557137003 OtherID: 1363323660 JT: Japanese Journal of Applied Physics MD: Khamseh,50,4s,413,2011,Effects of Deposition Conditions of First InSb Layer on Electrical Properties of n-Type InSb Films Grown With Two-Step Growth Method via InSb Bilayer DOI: 10.1143/JJAP.50.04DH13(Journal) (6692028-N) DOI: 10.7567/JJAP.50.04DH13(Journal) ========================================================== Created: 2023-02-01 12:50:36 ConfID: 6716604 CauseID: 1560041137 OtherID: 1363321119 JT: Japanese Journal of Applied Physics MD: Miyake,51,7s,710,2012,High-Frequency Rheo-Optical Spectroscopy by Ultrasonically Induced Light Diffraction DOI: 10.1143/JJAP.51.07GA10(Journal) (6716604-N) DOI: 10.7567/JJAP.51.07GA10(Journal) ========================================================== Created: 2023-01-05 12:04:35 ConfID: 6692029 CauseID: 1557137004 OtherID: 1363323670 JT: Japanese Journal of Applied Physics MD: Remashan,50,4s,408,2011,Improved Characteristics of Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors by Controlling VI/II Ratio of ZnO Film Growth and Using a Modified Thin-Film Transistor Layer Structure DOI: 10.1143/JJAP.50.04DJ08(Journal) (6692029-N) DOI: 10.7567/JJAP.50.04DJ08(Journal) ========================================================== Created: 2023-02-01 12:50:37 ConfID: 6716605 CauseID: 1560041138 OtherID: 1363321142 JT: Japanese Journal of Applied Physics MD: Nakanishi,51,7s,715,2012,Transverse-Mode Spurious Suppression Technique for Surface Acoustic Wave Resonator with Zero Temperature Coefficient of Frequency on a SiO2/Al/LiNbO3 Structure DOI: 10.1143/JJAP.51.07GC15(Journal) (6716605-N) DOI: 10.7567/JJAP.51.07GC15(Journal) ========================================================== Created: 2023-01-05 12:04:32 ConfID: 6692026 CauseID: 1557136996 OtherID: 1363323663 JT: Japanese Journal of Applied Physics MD: Fujii,50,4s,410,2011,Strain-Induced Back Channel Electron Mobility Enhancement in Polycrystalline Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization DOI: 10.1143/JJAP.50.04DH10(Journal) (6692026-N) DOI: 10.7567/JJAP.50.04DH10(Journal) ========================================================== Created: 2023-02-01 12:50:39 ConfID: 6716602 CauseID: 1560041133 OtherID: 1363321143 JT: Japanese Journal of Applied Physics MD: Kim,51,7s,702,2012,Gas Void Fraction Estimation in Gas-Bubble-Contained Sands with Difference Frequency Waves DOI: 10.1143/JJAP.51.07GD02(Journal) (6716602-N) DOI: 10.7567/JJAP.51.07GD02(Journal) ========================================================== Created: 2023-01-05 12:04:33 ConfID: 6692027 CauseID: 1557136997 OtherID: 1363323677 JT: Japanese Journal of Applied Physics MD: Huang,50,4s,402,2011,Level Broadening Effect in Electron Tunneling through Double Quantum Dots with Different g Factors DOI: 10.1143/JJAP.50.04DJ02(Journal) (6692027-N) DOI: 10.7567/JJAP.50.04DJ02(Journal) ========================================================== Created: 2023-02-01 12:50:39 ConfID: 6716603 CauseID: 1560041134 OtherID: 1363320988 JT: Japanese Journal of Applied Physics MD: Sugawa,51,6s,610,2012,Simple Fabrication of Two-Dimensional Self-Assemblies Consisting of Gold and Silver Nanoparticles at an Air/Toluene Interface and Their Surface-Enhanced Raman Scattering Activity DOI: 10.1143/JJAP.51.06FG10(Journal) (6716603-N) DOI: 10.7567/JJAP.51.06FG10(Journal) ========================================================== Created: 2023-01-05 12:04:31 ConfID: 6692024 CauseID: 1557136994 OtherID: 1363323697 JT: Japanese Journal of Applied Physics MD: Wang,50,4s,409,2011,Reference Electrode–Insulator–Nitride–Oxide–Semiconductor Structure with Sm2O3 Sensing Membrane for pH-Sensor Application DOI: 10.1143/JJAP.50.04DL09(Journal) (6692024-N) DOI: 10.7567/JJAP.50.04DL09(Journal) ========================================================== Created: 2023-02-01 12:50:33 ConfID: 6716600 CauseID: 1560041127 OtherID: 1363321169 JT: Japanese Journal of Applied Physics MD: Lee,51,7s,715,2012,Arsenite Oxidation by Ultrasound Combined with Ultraviolet in Aqueous Solution DOI: 10.1143/JJAP.51.07GD15(Journal) (6716600-N) DOI: 10.7567/JJAP.51.07GD15(Journal) ========================================================== Created: 2023-01-05 12:04:32 ConfID: 6692025 CauseID: 1557136995 OtherID: 1363323649 JT: Japanese Journal of Applied Physics MD: Takahasi,50,4s,406,2011,Structural Changes Caused by Quenching of InAs/GaAs(001) Quantum Dots DOI: 10.1143/JJAP.50.04DH06(Journal) (6692025-N) DOI: 10.7567/JJAP.50.04DH06(Journal) ========================================================== Created: 2023-02-01 12:50:38 ConfID: 6716601 CauseID: 1560041131 OtherID: 1363321026 JT: Japanese Journal of Applied Physics MD: Kim,51,6s,616,2012,Design and Fabrication of Microelectromechanical Systems Probe Card with Vertical Trench Guide for Fine Pitch Probing DOI: 10.1143/JJAP.51.06FL16(Journal) (6716601-N) DOI: 10.7567/JJAP.51.06FL16(Journal) ========================================================== Created: 2023-01-05 12:04:13 ConfID: 6691974 CauseID: 1557136943 OtherID: 1363323626 JT: Japanese Journal of Applied Physics MD: Orchard,50,4s,405,2011,Design Rules and Characterisation of Electrically Pumped Vertical External Cavity Surface Emitting Lasers DOI: 10.1143/JJAP.50.04DG05(Journal) (6691974-N) DOI: 10.7567/JJAP.50.04DG05(Journal) ========================================================== Created: 2023-02-01 12:49:41 ConfID: 6716550 CauseID: 1560041006 OtherID: 1363320990 JT: Japanese Journal of Applied Physics MD: Yang,51,6s,613,2012,Effect of Potassium Chloride Concentration on the Structural and Optical Properties of ZnO Nanorods Grown on Glass Substrates Coated with Indium Tin Oxide Film DOI: 10.1143/JJAP.51.06FG13(Journal) (6716550-N) DOI: 10.7567/JJAP.51.06FG13(Journal) ========================================================== Created: 2023-01-05 12:04:14 ConfID: 6691975 CauseID: 1557136944 OtherID: 1363323630 JT: Japanese Journal of Applied Physics MD: Chen,50,4s,416,2011,Optical Characterization of an Asymmetric Quantum Well Structure for Broadband Laser Array Application DOI: 10.1143/JJAP.50.04DG16(Journal) (6691975-N) DOI: 10.7567/JJAP.50.04DG16(Journal) ========================================================== Created: 2023-02-01 12:49:44 ConfID: 6716551 CauseID: 1560041012 OtherID: 1363320962 JT: Japanese Journal of Applied Physics MD: Mishima,51,6s,607,2012,Regression Analysis for Transport Electron Scattering Caused by Structural Defects in InSb Quantum Wells: Application of Matthiessen's Formula DOI: 10.1143/JJAP.51.06FE07(Journal) (6716551-N) DOI: 10.7567/JJAP.51.06FE07(Journal) ========================================================== Created: 2023-01-05 12:04:12 ConfID: 6691972 CauseID: 1557136941 OtherID: 1363323623 JT: Japanese Journal of Applied Physics MD: Lee,50,4s,403,2011,2.4–10 GHz Low-Noise Injection-Locked Ring Voltage Controlled Oscillator in 90 nm Complementary Metal Oxide Semiconductor DOI: 10.1143/JJAP.50.04DE03(Journal) (6691972-N) DOI: 10.7567/JJAP.50.04DE03(Journal) ========================================================== Created: 2023-02-01 12:49:36 ConfID: 6716548 CauseID: 1560040998 OtherID: 1363320969 JT: Japanese Journal of Applied Physics MD: Huh,51,6s,612,2012,Silver Embedded Nanomesas as Enhanced Single Quantum Dot Emitters in the Telecommunication C Band DOI: 10.1143/JJAP.51.06FF12(Journal) (6716548-N) DOI: 10.7567/JJAP.51.06FF12(Journal) ========================================================== Created: 2023-01-05 12:04:13 ConfID: 6691973 CauseID: 1557136942 OtherID: 1363323614 JT: Japanese Journal of Applied Physics MD: Ansari,50,4s,405,2011,Analysis of Within-Die Complementary Metal–Oxide–Semiconductor Process Variation with Reconfigurable Ring Oscillator Arrays Using HiSIM DOI: 10.1143/JJAP.50.04DE05(Journal) (6691973-N) DOI: 10.7567/JJAP.50.04DE05(Journal) ========================================================== Created: 2023-02-01 12:49:32 ConfID: 6716549 CauseID: 1560040990 OtherID: 1363321022 JT: Japanese Journal of Applied Physics MD: Han,51,6s,601,2012,Microchip-Based Organophosphorus Detection Using Bienzyme Bioelectrocatalysis DOI: 10.1143/JJAP.51.06FK01(Journal) (6716549-N) DOI: 10.7567/JJAP.51.06FK01(Journal) ========================================================== Created: 2023-01-05 12:04:11 ConfID: 6691970 CauseID: 1557136939 OtherID: 1363323613 JT: Japanese Journal of Applied Physics MD: Toya,50,4s,402,2011,Confocal Imaging System Using High-Speed Sampling Circuit and Ultra-Wideband Slot Antenna DOI: 10.1143/JJAP.50.04DE02(Journal) (6691970-N) DOI: 10.7567/JJAP.50.04DE02(Journal) ========================================================== Created: 2023-02-01 12:49:38 ConfID: 6716546 CauseID: 1560040994 OtherID: 1363320929 JT: Japanese Journal of Applied Physics MD: Nobusa,51,6s,615,2012,Fine Patterning of Inkjet-Printed Single-Walled Carbon-Nanotube Thin-Film Transistors DOI: 10.1143/JJAP.51.06FD15(Journal) (6716546-N) DOI: 10.7567/JJAP.51.06FD15(Journal) ========================================================== Created: 2023-01-05 12:04:11 ConfID: 6691971 CauseID: 1557136940 OtherID: 1363323642 JT: Japanese Journal of Applied Physics MD: Suzuki,50,4s,414,2011,A Study of Mach–Zehnder Interferometer Type Optical Modulator Applicable to an Accelerometer DOI: 10.1143/JJAP.50.04DG14(Journal) (6691971-N) DOI: 10.7567/JJAP.50.04DG14(Journal) ========================================================== Created: 2023-02-01 12:49:39 ConfID: 6716547 CauseID: 1560040996 OtherID: 1363321002 JT: Japanese Journal of Applied Physics MD: Nor,51,6s,608,2012,Synthesis of TiO2 Nanowires via Hydrothermal Method DOI: 10.1143/JJAP.51.06FG08(Journal) (6716547-N) DOI: 10.7567/JJAP.51.06FG08(Journal) ========================================================== Created: 2023-01-05 12:14:02 ConfID: 6691968 CauseID: 1557138316 OtherID: 1363322927 JT: Japanese Journal of Applied Physics MD: Kim,50,11r,114201,2011,Effects of Body Doping in a NAND Flash String without Source/Drain DOI: 10.1143/JJAP.50.114201(Journal) (6691968-N) DOI: 10.7567/JJAP.50.114201(Journal) ========================================================== Created: 2023-02-01 12:49:31 ConfID: 6716544 CauseID: 1560040989 OtherID: 1363320986 JT: Japanese Journal of Applied Physics MD: Yun,51,6s,604,2012,Silica/Ultraviolet-Cured Resin Nanocomposites for Replica Molds in Ultraviolet Nanoimprinting DOI: 10.1143/JJAP.51.06FJ04(Journal) (6716544-N) DOI: 10.7567/JJAP.51.06FJ04(Journal) ========================================================== Created: 2023-01-05 12:14:31 ConfID: 6691969 CauseID: 1557138375 OtherID: 1363322945 JT: Japanese Journal of Applied Physics MD: Yang,50,11r,119201,2011,Erratum: “Mitigation of Complementary Metal–Oxide–Semiconductor Variability with Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors” DOI: 10.1143/JJAP.50.119201(Journal) (6691969-N) DOI: 10.7567/JJAP.50.119201(Journal) ========================================================== Created: 2023-02-01 12:49:32 ConfID: 6716545 CauseID: 1560040991 OtherID: 1363321130 JT: Japanese Journal of Applied Physics MD: Kakio,51,7s,712,2012,Polarization Control by Leaky Surface Acoustic Wave in Reverse-Proton-Exchanged LiNbO3 Optical Waveguide DOI: 10.1143/JJAP.51.07GC12(Journal) (6716545-N) DOI: 10.7567/JJAP.51.07GC12(Journal) ========================================================== Created: 2023-01-05 12:04:18 ConfID: 6691982 CauseID: 1557136957 OtherID: 1363323609 JT: Japanese Journal of Applied Physics MD: Kwan,50,4s,402,2011,High-Gain and High-Bandwidth AlGaN/GaN High Electron Mobility Transistor Comparator with High-Temperature Operation DOI: 10.1143/JJAP.50.04DF02(Journal) (6691982-N) DOI: 10.7567/JJAP.50.04DF02(Journal) ========================================================== Created: 2023-02-01 12:49:53 ConfID: 6716558 CauseID: 1560041023 OtherID: 1363321041 JT: Japanese Journal of Applied Physics MD: Hatama,51,6s,614,2012,Magnetic Micro Actuator Using Interactive Force between Magnetic Elements DOI: 10.1143/JJAP.51.06FL14(Journal) (6716558-N) DOI: 10.7567/JJAP.51.06FL14(Journal) ========================================================== Created: 2023-01-05 12:04:19 ConfID: 6691983 CauseID: 1557136958 OtherID: 1363323680 JT: Japanese Journal of Applied Physics MD: Washio,50,4s,404,2011,Admittance Measurement for a Quantum Point Contact in a Multiterminal Quantum Hall Device DOI: 10.1143/JJAP.50.04DJ04(Journal) (6691983-N) DOI: 10.7567/JJAP.50.04DJ04(Journal) ========================================================== Created: 2023-02-01 12:49:53 ConfID: 6716559 CauseID: 1560041024 OtherID: 1363321037 JT: Japanese Journal of Applied Physics MD: Choi,51,6s,612,2012,Micro-Electro-Mechanical-Systems-Based Micro-Ro-Boat Utilizing Steam as Propulsion Power DOI: 10.1143/JJAP.51.06FL12(Journal) (6716559-N) DOI: 10.7567/JJAP.51.06FL12(Journal) ========================================================== Created: 2023-01-05 12:14:33 ConfID: 6691980 CauseID: 1557138378 OtherID: 1363324313 JT: Japanese Journal of Applied Physics MD: Lin,50,7s,707,2011,Intercarrier Interference Cancellation for Time-Reversed Orthogonal Frequency Division Multiplexing Systems DOI: 10.1143/JJAP.50.07HG07(Journal) (6691980-N) DOI: 10.7567/JJAP.50.07HG07(Journal) ========================================================== Created: 2023-02-01 12:49:49 ConfID: 6716556 CauseID: 1560041020 OtherID: 1363321014 JT: Japanese Journal of Applied Physics MD: Oigawa,51,6s,602,2012,Vibration Analysis of Original Shape Quartz Resonator for High Quality Factor Realization DOI: 10.1143/JJAP.51.06FL02(Journal) (6716556-N) DOI: 10.7567/JJAP.51.06FL02(Journal) ========================================================== Created: 2023-01-05 12:04:17 ConfID: 6691981 CauseID: 1557136956 OtherID: 1363323631 JT: Japanese Journal of Applied Physics MD: Shin,50,4s,412,2011,Integration of Micro-Light-Emitting-Diode Arrays and Silicon Driver for Heterogeneous Optoelectronic Integrated Circuit Device DOI: 10.1143/JJAP.50.04DG12(Journal) (6691981-N) DOI: 10.7567/JJAP.50.04DG12(Journal) ========================================================== Created: 2023-02-01 12:49:48 ConfID: 6716557 CauseID: 1560041019 OtherID: 1363320943 JT: Japanese Journal of Applied Physics MD: Fukuoka,51,6s,623,2012,Low-Temperature Synthesis of Single-Walled Carbon Nanotubes in a High Vacuum Using Pt Catalyst in Alcohol Gas Source Method DOI: 10.1143/JJAP.51.06FD23(Journal) (6716557-N) DOI: 10.7567/JJAP.51.06FD23(Journal) ========================================================== Created: 2023-01-05 12:04:16 ConfID: 6691978 CauseID: 1557136954 OtherID: 1363323673 JT: Japanese Journal of Applied Physics MD: Muroyama,50,4s,407,2011,Maskless Patterning of Vapor-Deposited Photosensitive Film and its Application to Organic Light-Emitting Diodes DOI: 10.1143/JJAP.50.04DK07(Journal) (6691978-N) DOI: 10.7567/JJAP.50.04DK07(Journal) ========================================================== Created: 2023-02-01 12:49:46 ConfID: 6716554 CauseID: 1560041016 OtherID: 1363320971 JT: Japanese Journal of Applied Physics MD: Tang,51,6s,606,2012,Fabrication of Nanocone Subwavelength Antireflection Structures on Quartz Substrates DOI: 10.1143/JJAP.51.06FF06(Journal) (6716554-N) DOI: 10.7567/JJAP.51.06FF06(Journal) ========================================================== Created: 2023-01-05 12:04:17 ConfID: 6691979 CauseID: 1557136955 OtherID: 1363323681 JT: Japanese Journal of Applied Physics MD: Taguchi,50,4s,408,2011,Direct Probing of Carrier Behavior in Electroluminescence Indium–Zinc-Oxide/N,N '-Di-[(1-naphthyl)-N,N '-diphenyl]-(1,1'-biphenyl)-4,4'-diamine/Tris(8-hydroxy-quinolinato)aluminum(III)/LiF/Al Diode by Time-Resolved Optical Second-Harmonic Generation DOI: 10.1143/JJAP.50.04DK08(Journal) (6691979-N) DOI: 10.7567/JJAP.50.04DK08(Journal) ========================================================== Created: 2023-02-01 12:49:48 ConfID: 6716555 CauseID: 1560041018 OtherID: 1363321018 JT: Japanese Journal of Applied Physics MD: Hattori,51,6s,605,2012,Extended Depth of Field Optics for Precise Image Analysis in Microfluidic Flow Cytometry DOI: 10.1143/JJAP.51.06FK05(Journal) (6716555-N) DOI: 10.7567/JJAP.51.06FK05(Journal) ========================================================== Created: 2023-01-05 12:04:15 ConfID: 6691976 CauseID: 1557136952 OtherID: 1363323659 JT: Japanese Journal of Applied Physics MD: Lee,50,4s,418,2011,Estimating the Junction Temperature of InGaN and AlGaInP Light-Emitting Diodes DOI: 10.1143/JJAP.50.04DG18(Journal) (6691976-N) DOI: 10.7567/JJAP.50.04DG18(Journal) ========================================================== Created: 2023-02-01 12:49:46 ConfID: 6716552 CauseID: 1560041015 OtherID: 1363321020 JT: Japanese Journal of Applied Physics MD: Yasui,51,6s,610,2012,Sensitive Fluorescence Microscopy of Neurons Cultured on a Plasmonic Chip DOI: 10.1143/JJAP.51.06FK10(Journal) (6716552-N) DOI: 10.7567/JJAP.51.06FK10(Journal) ========================================================== Created: 2023-01-05 12:04:15 ConfID: 6691977 CauseID: 1557136953 OtherID: 1363323658 JT: Japanese Journal of Applied Physics MD: Deura,50,4s,407,2011,High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal–Organic Vapor Phase Epitaxy DOI: 10.1143/JJAP.50.04DH07(Journal) (6691977-N) DOI: 10.7567/JJAP.50.04DH07(Journal) ========================================================== Created: 2023-02-01 12:49:40 ConfID: 6716553 CauseID: 1560041003 OtherID: 1363321025 JT: Japanese Journal of Applied Physics MD: Mizoshiri,51,6s,607,2012,Thermal–Photovoltaic Hybrid Solar Generator Using Thin-Film Thermoelectric Modules DOI: 10.1143/JJAP.51.06FL07(Journal) (6716553-N) DOI: 10.7567/JJAP.51.06FL07(Journal) ========================================================== Created: 2023-01-05 12:14:42 ConfID: 6691990 CauseID: 1557138398 OtherID: 1363324443 JT: Japanese Journal of Applied Physics MD: Hayashi,50,8s1,804,2011,Redox Characteristics of Thiol Compounds Using Radicals Produced by Water Vapor Radio Frequency Discharge DOI: 10.1143/JJAP.50.08JF04(Journal) (6691990-N) DOI: 10.7567/JJAP.50.08JF04(Journal) ========================================================== Created: 2023-02-01 12:50:02 ConfID: 6716566 CauseID: 1560041052 OtherID: 1363321118 JT: Japanese Journal of Applied Physics MD: Ogi,51,7s,708,2012,Picosecond Ultrasound Spectroscopy with a Stable Fiber Laser for Ultrahigh-Frequency-Oscillator Applications: from Nanomechanics to Biosensors DOI: 10.1143/JJAP.51.07GA08(Journal) (6716566-N) DOI: 10.7567/JJAP.51.07GA08(Journal) ========================================================== Created: 2023-01-05 12:15:44 ConfID: 6691991 CauseID: 1557138511 OtherID: 1363324571 JT: Japanese Journal of Applied Physics MD: Yang,50,9r,98002,2011,Accuracy Improvement for Light-Emitting-Diode-Based Colorimeter by Iterative Algorithm DOI: 10.1143/JJAP.50.098002(Journal) (6691991-N) DOI: 10.7567/JJAP.50.098002(Journal) ========================================================== Created: 2023-02-01 12:50:03 ConfID: 6716567 CauseID: 1560041054 OtherID: 1363321147 JT: Japanese Journal of Applied Physics MD: Kakio,51,7s,717,2012,Loss Reduction of Longitudinal-Type Leaky Surface Acoustic Wave by Reverse Proton Exchange DOI: 10.1143/JJAP.51.07GC17(Journal) (6716567-N) DOI: 10.7567/JJAP.51.07GC17(Journal) ========================================================== Created: 2023-01-05 12:14:41 ConfID: 6691988 CauseID: 1557138396 OtherID: 1363324296 JT: Japanese Journal of Applied Physics MD: Yoshida,50,7s,715,2011,Reference Materials for the Measurement of Acoustic Attenuation Coefficients DOI: 10.1143/JJAP.50.07HF15(Journal) (6691988-N) DOI: 10.7567/JJAP.50.07HF15(Journal) ========================================================== Created: 2023-02-01 12:49:59 ConfID: 6716564 CauseID: 1560041038 OtherID: 1363320961 JT: Japanese Journal of Applied Physics MD: Enobio,51,6s,615,2012,Photocurrent Measurements on a Quantum Cascade Laser Device by Fourier Transform Infrared Microscope DOI: 10.1143/JJAP.51.06FE15(Journal) (6716564-N) DOI: 10.7567/JJAP.51.06FE15(Journal) ========================================================== Created: 2023-01-05 12:04:20 ConfID: 6691989 CauseID: 1557136965 OtherID: 1363323696 JT: Japanese Journal of Applied Physics MD: Tachibana,50,4s,418,2011,Optical Properties of Siloxene Films Prepared by High-Temperature Heat Treatment from Thin Films of Polysilane Containing Anthryl Groups DOI: 10.1143/JJAP.50.04DK18(Journal) (6691989-N) DOI: 10.7567/JJAP.50.04DK18(Journal) ========================================================== Created: 2023-02-01 12:50:01 ConfID: 6716565 CauseID: 1560041050 OtherID: 1363321040 JT: Japanese Journal of Applied Physics MD: Okamoto,51,6s,606,2012,Lamé-Mode Octagonal Microelectromechanical System Resonator Utilizing Slanting Shape of Sliding Driving Electrodes DOI: 10.1143/JJAP.51.06FL06(Journal) (6716565-N) DOI: 10.7567/JJAP.51.06FL06(Journal) ========================================================== Created: 2023-01-05 12:14:39 ConfID: 6691986 CauseID: 1557138384 OtherID: 1363322986 JT: Japanese Journal of Applied Physics MD: Lee,50,12r,120203,2011,Electrical Stability of Power Efficient Half Corbino Hydrogenated Amorphous Silicon Thin-Film Transistors DOI: 10.1143/JJAP.50.120203(Journal) (6691986-N) DOI: 10.7567/JJAP.50.120203(Journal) ========================================================== Created: 2023-02-01 12:49:52 ConfID: 6716562 CauseID: 1560041031 OtherID: 1363321027 JT: Japanese Journal of Applied Physics MD: Ikehara,51,6s,608,2012,Frequency Stability of a Closed-Loop Oscillator Using Micro-Electro-Mechanical Cantilever Resonator Against Temperature Fluctuation DOI: 10.1143/JJAP.51.06FL08(Journal) (6716562-N) DOI: 10.7567/JJAP.51.06FL08(Journal) ========================================================== Created: 2023-01-05 12:14:35 ConfID: 6691987 CauseID: 1557138387 OtherID: 1363324322 JT: Japanese Journal of Applied Physics MD: Lee,50,7s,702,2011,Experiment on Effect of Screening Hydrophone for Reduction of Flow-Induced Ambient Noise in Ocean DOI: 10.1143/JJAP.50.07HG02(Journal) (6691987-N) DOI: 10.7567/JJAP.50.07HG02(Journal) ========================================================== Created: 2023-02-01 12:49:52 ConfID: 6716563 CauseID: 1560041032 OtherID: 1363320960 JT: Japanese Journal of Applied Physics MD: Tanaka,51,6s,616,2012,Control Theory of Near-Field Optical Energy Transfer in One-Dimensional Waveguide Consisting of Metallic Nanoparticles by Vibrating External Field DOI: 10.1143/JJAP.51.06FE16(Journal) (6716563-N) DOI: 10.7567/JJAP.51.06FE16(Journal) ========================================================== Created: 2023-01-05 12:04:19 ConfID: 6691984 CauseID: 1557136959 OtherID: 1363323641 JT: Japanese Journal of Applied Physics MD: Mochizuki,50,4s,415,2011,Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication DOI: 10.1143/JJAP.50.04DG15(Journal) (6691984-N) DOI: 10.7567/JJAP.50.04DG15(Journal) ========================================================== Created: 2023-02-01 12:49:50 ConfID: 6716560 CauseID: 1560041027 OtherID: 1363320972 JT: Japanese Journal of Applied Physics MD: Hashim,51,6s,604,2012,Epitaxial-Template Structure Utilizing Ge-on-Insulator Stripe Arrays with Nanospacing for Advanced Heterogeneous Integration on Si Platform DOI: 10.1143/JJAP.51.06FF04(Journal) (6716560-N) DOI: 10.7567/JJAP.51.06FF04(Journal) ========================================================== Created: 2023-01-05 12:04:20 ConfID: 6691985 CauseID: 1557136964 OtherID: 1363323668 JT: Japanese Journal of Applied Physics MD: Lin,50,4s,401,2011,Carrier Propagation Dependence on Applied Potentials in Pentacene Organic Field Effect Transistors Investigated by Impedance Spectroscopy and Electrical Time-of-Flight Techniques DOI: 10.1143/JJAP.50.04DK01(Journal) (6691985-N) DOI: 10.7567/JJAP.50.04DK01(Journal) ========================================================== Created: 2023-02-01 12:49:51 ConfID: 6716561 CauseID: 1560041029 OtherID: 1363321010 JT: Japanese Journal of Applied Physics MD: Hamada,51,6s,603,2012,Importance of Thickness in Human Cardiomyocyte Network for Effective Electrophysiological Stimulation Using On-Chip Extracellular Microelectrodes DOI: 10.1143/JJAP.51.06FK03(Journal) (6716561-N) DOI: 10.7567/JJAP.51.06FK03(Journal) ========================================================== Created: 2023-01-05 12:16:28 ConfID: 6691998 CauseID: 1557138596 OtherID: 1363324633 JT: Japanese Journal of Applied Physics MD: Omori,50,9s2,903,2011,Modes of Domain Wall Motion and Polarization of Lead Zirconate Titanate Polycrystals DOI: 10.1143/JJAP.50.09NC03(Journal) (6691998-N) DOI: 10.7567/JJAP.50.09NC03(Journal) ========================================================== Created: 2023-02-01 12:50:08 ConfID: 6716574 CauseID: 1560041069 OtherID: 1363321013 JT: Japanese Journal of Applied Physics MD: Nomura,51,6s,606,2012,Quantitative Evaluation of Closed-Loop-Shaped Cardiomyocyte Network by Using Ring-Shaped Electrode DOI: 10.1143/JJAP.51.06FK06(Journal) (6716574-N) DOI: 10.7567/JJAP.51.06FK06(Journal) ========================================================== Created: 2023-01-05 12:16:48 ConfID: 6691999 CauseID: 1557138626 OtherID: 1363322822 JT: Japanese Journal of Applied Physics MD: Jee,50,10r,100205,2011,Modeling of Sacrificial Layer Residue Effect in Nano-Electro-Mechanical Nonvolatile Memory DOI: 10.1143/JJAP.50.100205(Journal) (6691999-N) DOI: 10.7567/JJAP.50.100205(Journal) ========================================================== Created: 2023-02-01 12:50:09 ConfID: 6716575 CauseID: 1560041070 OtherID: 1363321320 JT: Japanese Journal of Applied Physics MD: Kim,51,8s2,802,2012,System Identification Using Embedded Dynamic Signal Analyzer DOI: 10.1143/JJAP.51.08JB02(Journal) (6716575-N) DOI: 10.7567/JJAP.51.08JB02(Journal) ========================================================== Created: 2023-01-05 12:16:15 ConfID: 6691996 CauseID: 1557138574 OtherID: 1363324435 JT: Japanese Journal of Applied Physics MD: Metel,50,8s1,804,2011,Cutting Tools Nitriding in Plasma Produced by a Fast Neutral Molecule Beam DOI: 10.1143/JJAP.50.08JG04(Journal) (6691996-N) DOI: 10.7567/JJAP.50.08JG04(Journal) ========================================================== Created: 2023-02-01 12:50:08 ConfID: 6716572 CauseID: 1560041068 OtherID: 1363320966 JT: Japanese Journal of Applied Physics MD: Shin,51,6s,620,2012,Extraction Method for Substrate-Related Components of Vertical Junctionless Silicon Nanowire Field-Effect Transistors and Its Verification on Radio Frequency Characteristics DOI: 10.1143/JJAP.51.06FE20(Journal) (6716572-N) DOI: 10.7567/JJAP.51.06FE20(Journal) ========================================================== Created: 2023-01-05 12:16:21 ConfID: 6691997 CauseID: 1557138581 OtherID: 1363324596 JT: Japanese Journal of Applied Physics MD: Kajiyama,50,9s1,907,2011,Experimental Analysis of Axial Run-Out in Flexible Optical Disks DOI: 10.1143/JJAP.50.09MC07(Journal) (6691997-N) DOI: 10.7567/JJAP.50.09MC07(Journal) ========================================================== Created: 2023-02-01 12:50:02 ConfID: 6716573 CauseID: 1560041053 OtherID: 1363320957 JT: Japanese Journal of Applied Physics MD: Kim,51,6s,621,2012,Carrier Transport Mechanisms of the Programming and Retention Characteristics for TaN–Al2O3–Si3N4–SiO2–Si Flash Memory Devices DOI: 10.1143/JJAP.51.06FE21(Journal) (6716573-N) DOI: 10.7567/JJAP.51.06FE21(Journal) ========================================================== Created: 2023-01-05 12:15:55 ConfID: 6691994 CauseID: 1557138535 OtherID: 1363324600 JT: Japanese Journal of Applied Physics MD: Honma,50,9s1,913,2011,Face Recognition System with Holographic Memory and Stereovision Technology DOI: 10.1143/JJAP.50.09ME13(Journal) (6691994-N) DOI: 10.7567/JJAP.50.09ME13(Journal) ========================================================== Created: 2023-02-01 12:50:05 ConfID: 6716570 CauseID: 1560041064 OtherID: 1363321149 JT: Japanese Journal of Applied Physics MD: Kano,51,7s,720,2012,Measurement Characteristics of Flow-Type Shear-Horizontal Surface Acoustic Wave Sensor for Direct Methanol Fuel Cells DOI: 10.1143/JJAP.51.07GC20(Journal) (6716570-N) DOI: 10.7567/JJAP.51.07GC20(Journal) ========================================================== Created: 2023-01-05 12:04:21 ConfID: 6691995 CauseID: 1557136966 OtherID: 1363323661 JT: Japanese Journal of Applied Physics MD: Chen,50,4s,419,2011,GaN-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors with the ZrO2 Insulating Layer DOI: 10.1143/JJAP.50.04DG19(Journal) (6691995-N) DOI: 10.7567/JJAP.50.04DG19(Journal) ========================================================== Created: 2023-02-01 12:50:07 ConfID: 6716571 CauseID: 1560041067 OtherID: 1363321107 JT: Japanese Journal of Applied Physics MD: Miyazaki,51,7s,702,2012,Perfectly Matched Layer for the Wave Equation Finite Difference Time Domain Method DOI: 10.1143/JJAP.51.07GB02(Journal) (6716571-N) DOI: 10.7567/JJAP.51.07GB02(Journal) ========================================================== Created: 2023-01-05 12:15:48 ConfID: 6691992 CauseID: 1557138523 OtherID: 1363324412 JT: Japanese Journal of Applied Physics MD: Keller,50,8s1,803,2011,What We Learned and Used in the First Inductively Coupled Plasma for Plasma Processing and in Later Development DOI: 10.1143/JJAP.50.08JA03(Journal) (6691992-N) DOI: 10.7567/JJAP.50.08JA03(Journal) ========================================================== Created: 2023-02-01 12:50:04 ConfID: 6716568 CauseID: 1560041056 OtherID: 1363321113 JT: Japanese Journal of Applied Physics MD: Mori,51,7s,707,2012,Study of Bandgap Energies of Cu(In,Ga)Se2 Thin Films Grown by a Sequential Evaporation Method Using Piezoelectric Photothermal Spectroscopy DOI: 10.1143/JJAP.51.07GA07(Journal) (6716568-N) DOI: 10.7567/JJAP.51.07GA07(Journal) ========================================================== Created: 2023-01-05 12:15:53 ConfID: 6691993 CauseID: 1557138532 OtherID: 1363324422 JT: Japanese Journal of Applied Physics MD: Marneffe,50,8s1,807,2011,Patterning of 25 nm Contact Holes at 90 nm Pitch: Combination of Line/Space Double Exposure Immersion Lithography and Plasma-Assisted Shrink Technology DOI: 10.1143/JJAP.50.08JE07(Journal) (6691993-N) DOI: 10.7567/JJAP.50.08JE07(Journal) ========================================================== Created: 2023-02-01 12:50:06 ConfID: 6716569 CauseID: 1560041065 OtherID: 1363321015 JT: Japanese Journal of Applied Physics MD: Nagaoka,51,6s,607,2012,Simulation of Resist Filling Properties under Condensable Gas Ambient in Ultraviolet Nanoimprint Lithography DOI: 10.1143/JJAP.51.06FJ07(Journal) (6716569-N) DOI: 10.7567/JJAP.51.06FJ07(Journal) ========================================================== Created: 2023-01-05 12:06:34 ConfID: 6692198 CauseID: 1557137288 OtherID: 1363323969 JT: Japanese Journal of Applied Physics MD: Naitou,50,6r,66602,2011,Capacitive Imaging of Graphene Flakes on SiO2 Substrate DOI: 10.1143/JJAP.50.066602(Journal) (6692198-N) DOI: 10.7567/JJAP.50.066602(Journal) ========================================================== Created: 2023-01-05 12:06:34 ConfID: 6692199 CauseID: 1557137289 OtherID: 1363323828 JT: Japanese Journal of Applied Physics MD: Tanaka,50,5s1,502,2011,Chemical Vapor Deposition of Nanocarbon on Electroless NiB Catalyst Using Ethanol Precursor DOI: 10.1143/JJAP.50.05EF02(Journal) (6692199-N) DOI: 10.7567/JJAP.50.05EF02(Journal) ========================================================== Created: 2023-01-05 12:06:32 ConfID: 6692196 CauseID: 1557137285 OtherID: 1363323063 JT: Japanese Journal of Applied Physics MD: Shimura,50,1r,10112,2011,Characterization of SiGe Layer during Ge Condensation Process by X-ray Diffraction Methods DOI: 10.1143/JJAP.50.010112(Journal) (6692196-N) DOI: 10.7567/JJAP.50.010112(Journal) ========================================================== Created: 2023-01-05 12:06:32 ConfID: 6692197 CauseID: 1557137286 OtherID: 1363323950 JT: Japanese Journal of Applied Physics MD: Hou,50,6r,65101,2011,Decomposition of Ethanol and Dimethyl Ether during Chemical Vapor Deposition Synthesis of Single-Walled Carbon Nanotubes DOI: 10.1143/JJAP.50.065101(Journal) (6692197-N) DOI: 10.7567/JJAP.50.065101(Journal) ========================================================== Created: 2023-01-05 12:28:46 ConfID: 6692194 CauseID: 1557140030 OtherID: 1363323053 JT: Japanese Journal of Applied Physics MD: Iida,50,12r,128004,2011,Power Linearity Measurement in Terahertz Time-Domain Spectroscopy Using Metalized Film Attenuators DOI: 10.1143/JJAP.50.128004(Journal) (6692194-N) DOI: 10.7567/JJAP.50.128004(Journal) ========================================================== Created: 2023-01-05 12:28:52 ConfID: 6692195 CauseID: 1557140042 OtherID: 1363323019 JT: Japanese Journal of Applied Physics MD: Matsuzawa,50,12r,124302,2011,Impact of Random Dopant Fluctuation on Size-Dependence of Contact Resistance DOI: 10.1143/JJAP.50.124302(Journal) (6692195-N) DOI: 10.7567/JJAP.50.124302(Journal) ========================================================== Created: 2023-01-05 12:06:31 ConfID: 6692192 CauseID: 1557137283 OtherID: 1363323873 JT: Japanese Journal of Applied Physics MD: Matsumoto,50,5s2,513,2011,Optical and Structural Properties of Zn–Cd–Mn–Se Double Quantum Well Systems DOI: 10.1143/JJAP.50.05FC13(Journal) (6692192-N) DOI: 10.7567/JJAP.50.05FC13(Journal) ========================================================== Created: 2023-01-05 12:06:31 ConfID: 6692193 CauseID: 1557137284 OtherID: 1363323758 JT: Japanese Journal of Applied Physics MD: Sameshima,50,5r,52301,2011,Multi Junction Solar Cells Stacked with Transparent and Conductive Adhesive DOI: 10.1143/JJAP.50.052301(Journal) (6692193-N) DOI: 10.7567/JJAP.50.052301(Journal) ========================================================== Created: 2023-01-05 12:06:40 ConfID: 6692206 CauseID: 1557137300 OtherID: 1363323853 JT: Japanese Journal of Applied Physics MD: Ashida,50,5s2,512,2011,Initial Growth Process in Electrochemical Deposition of ZnO DOI: 10.1143/JJAP.50.05FB12(Journal) (6692206-N) DOI: 10.7567/JJAP.50.05FB12(Journal) ========================================================== Created: 2023-01-05 12:06:42 ConfID: 6692207 CauseID: 1557137303 OtherID: 1363323753 JT: Japanese Journal of Applied Physics MD: Shah,50,5r,53002,2011,Cluster Co-Existence and DC Field Effect on Re-entrant Spin Freezing Behavior in La0.85Ca0.15Mn0.95Fe0.05O Manganates DOI: 10.1143/JJAP.50.053002(Journal) (6692207-N) DOI: 10.7567/JJAP.50.053002(Journal) ========================================================== Created: 2023-01-05 12:06:36 ConfID: 6692204 CauseID: 1557137294 OtherID: 1363323755 JT: Japanese Journal of Applied Physics MD: Hanawa,50,5r,53101,2011,Substrate Dependence of Structural and Transport Properties in FeSe0.5Te0.5 Thin Films DOI: 10.1143/JJAP.50.053101(Journal) (6692204-N) DOI: 10.7567/JJAP.50.053101(Journal) ========================================================== Created: 2023-01-05 12:06:41 ConfID: 6692205 CauseID: 1557137301 OtherID: 1363323960 JT: Japanese Journal of Applied Physics MD: Kim,50,6r,65802,2011,Transport Properties of 50Li2O–50B2O3 Glass DOI: 10.1143/JJAP.50.065802(Journal) (6692205-N) DOI: 10.7567/JJAP.50.065802(Journal) ========================================================== Created: 2023-01-05 12:06:39 ConfID: 6692202 CauseID: 1557137298 OtherID: 1363323783 JT: Japanese Journal of Applied Physics MD: Kamada,50,5r,56602,2011,Optimization of Bandwidth and Signal Responses of Optically Pumped Atomic Magnetometers for Biomagnetic Applications DOI: 10.1143/JJAP.50.056602(Journal) (6692202-N) DOI: 10.7567/JJAP.50.056602(Journal) ========================================================== Created: 2023-01-05 12:06:39 ConfID: 6692203 CauseID: 1557137299 OtherID: 1363323069 JT: Japanese Journal of Applied Physics MD: Kutsuki,50,1r,10106,2011,Thermal Robustness and Improved Electrical Properties of Ultrathin Germanium Oxynitride Gate Dielectric DOI: 10.1143/JJAP.50.010106(Journal) (6692203-N) DOI: 10.7567/JJAP.50.010106(Journal) ========================================================== Created: 2023-01-05 12:06:37 ConfID: 6692200 CauseID: 1557137295 OtherID: 1363323974 JT: Japanese Journal of Applied Physics MD: Kotaki,50,6r,66401,2011,Effect of the Laser Contrast Ratio within Picosecond Timescales on Generating a High-Quality Electron Beam by Laser–Plasma Interaction DOI: 10.1143/JJAP.50.066401(Journal) (6692200-N) DOI: 10.7567/JJAP.50.066401(Journal) ========================================================== Created: 2023-01-05 12:06:38 ConfID: 6692201 CauseID: 1557137297 OtherID: 1363323770 JT: Japanese Journal of Applied Physics MD: Ibata,50,5r,51503,2011,Approximate Analysis of Cylindrical Ferroelectric Capacitor and Derivation of Drain Current Characteristics in Ferroelectric Gate-All-Around Carbon Nanotube Transistor DOI: 10.1143/JJAP.50.051503(Journal) (6692201-N) DOI: 10.7567/JJAP.50.051503(Journal) ========================================================== Created: 2023-01-05 12:06:49 ConfID: 6692214 CauseID: 1557137314 OtherID: 1363324023 JT: Japanese Journal of Applied Physics MD: Ikeda,50,6s,620,2011,A Theoretical Study of a Novel Single-Electron Refrigerator Fabricated from Semiconductor Materials DOI: 10.1143/JJAP.50.06GF20(Journal) (6692214-N) DOI: 10.7567/JJAP.50.06GF20(Journal) ========================================================== Created: 2023-01-05 12:29:48 ConfID: 6692215 CauseID: 1557140190 OtherID: 1363320132 JT: Japanese Journal of Applied Physics MD: Kim,51,1r,10206,2012,Attractive Polarization Effects on Binary Atomic Si–Si Collisions DOI: 10.1143/JJAP.51.010206(Journal) (6692215-N) DOI: 10.7567/JJAP.51.010206(Journal) ========================================================== Created: 2023-01-05 12:06:47 ConfID: 6692212 CauseID: 1557137312 OtherID: 1363323756 JT: Japanese Journal of Applied Physics MD: Liang,50,5r,55002,2011,Effects of Concentration of Nanoscale Tin-Doped Indium Oxide on Electrical Breakdown of High-Resistance Liquid Crystal DOI: 10.1143/JJAP.50.055002(Journal) (6692212-N) DOI: 10.7567/JJAP.50.055002(Journal) ========================================================== Created: 2023-01-05 12:06:48 ConfID: 6692213 CauseID: 1557137313 OtherID: 1363323954 JT: Japanese Journal of Applied Physics MD: Sugiyama,50,6r,65503,2011,Sulfurization Growth of CuInS2 Thin Film Using Ditertiarybutylsulfide as a Less Hazardous Source DOI: 10.1143/JJAP.50.065503(Journal) (6692213-N) DOI: 10.7567/JJAP.50.065503(Journal) ========================================================== Created: 2023-01-05 12:06:46 ConfID: 6692210 CauseID: 1557137309 OtherID: 1363323776 JT: Japanese Journal of Applied Physics MD: Anton,50,5r,55802,2011,Effect of K0.5Na0.5NbO3 on Properties at and off the Morphotropic Phase Boundary in Bi0.5Na0.5TiO3–Bi0.5K0.5TiO3 Ceramics DOI: 10.1143/JJAP.50.055802(Journal) (6692210-N) DOI: 10.7567/JJAP.50.055802(Journal) ========================================================== Created: 2023-01-05 12:06:46 ConfID: 6692211 CauseID: 1557137310 OtherID: 1363323898 JT: Japanese Journal of Applied Physics MD: Omata,50,6r,61102,2011,Fabrication of ZnO Films Alloyed with LiGaO2 by RF-Magnetron Sputtering and Their Optical Property DOI: 10.1143/JJAP.50.061102(Journal) (6692211-N) DOI: 10.7567/JJAP.50.061102(Journal) ========================================================== Created: 2023-01-05 12:06:44 ConfID: 6692208 CauseID: 1557137306 OtherID: 1363323922 JT: Japanese Journal of Applied Physics MD: Jeon,50,6r,61603,2011,The Ideal Doping Concentration in Phosphorescent Organic Light Emitting Devices DOI: 10.1143/JJAP.50.061603(Journal) (6692208-N) DOI: 10.7567/JJAP.50.061603(Journal) ========================================================== Created: 2023-01-05 12:06:44 ConfID: 6692209 CauseID: 1557137307 OtherID: 1363323901 JT: Japanese Journal of Applied Physics MD: Lee,50,6r,60203,2011,Effects of Phase-Separation Direction of Monomers on Polymer Wall Formation and Electrooptical Properties of Flexible Smectic Liquid Crystal Cell DOI: 10.1143/JJAP.50.060203(Journal) (6692209-N) DOI: 10.7567/JJAP.50.060203(Journal) ========================================================== Created: 2023-01-05 12:06:59 ConfID: 6692222 CauseID: 1557137328 OtherID: 1363323924 JT: Japanese Journal of Applied Physics MD: Lee,50,6r,61401,2011,Electrical Characteristics of Low-Temperature Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Thin-Film Transistors with Six-Step Photomask Structure DOI: 10.1143/JJAP.50.061401(Journal) (6692222-N) DOI: 10.7567/JJAP.50.061401(Journal) ========================================================== Created: 2023-01-05 12:06:53 ConfID: 6692223 CauseID: 1557137327 OtherID: 1363323863 JT: Japanese Journal of Applied Physics MD: Isaev,50,5s2,501,2011,Ab initio Calculations of Elastic Constants of Superalloys DOI: 10.1143/JJAP.50.05FE01(Journal) (6692223-N) DOI: 10.7567/JJAP.50.05FE01(Journal) ========================================================== Created: 2023-01-05 12:06:51 ConfID: 6692220 CauseID: 1557137324 OtherID: 1363323936 JT: Japanese Journal of Applied Physics MD: Matsumoto,50,6r,63003,2011,Quantitative Analysis of Coherent and Incoherent Tunneling Currents in MgO-Based Epitaxial Magnetic Tunnel Junctions DOI: 10.1143/JJAP.50.063003(Journal) (6692220-N) DOI: 10.7567/JJAP.50.063003(Journal) ========================================================== Created: 2023-01-05 12:06:52 ConfID: 6692221 CauseID: 1557137325 OtherID: 1363323843 JT: Japanese Journal of Applied Physics MD: Maeda,50,5s2,508,2011,Annealing Temperature Dependence of Properties of Cu2ZnSnS4 Thin Films Prepared by Sol–Gel Sulfurization Method DOI: 10.1143/JJAP.50.05FB08(Journal) (6692221-N) DOI: 10.7567/JJAP.50.05FB08(Journal) ========================================================== Created: 2023-01-05 12:06:54 ConfID: 6692218 CauseID: 1557137321 OtherID: 1363323782 JT: Japanese Journal of Applied Physics MD: Song,50,5r,55502,2011,Properties of Si-Doped a-Plane GaN Grown with Different SiH4 Flow Rates DOI: 10.1143/JJAP.50.055502(Journal) (6692218-N) DOI: 10.7567/JJAP.50.055502(Journal) ========================================================== Created: 2023-01-05 12:06:50 ConfID: 6692219 CauseID: 1557137322 OtherID: 1363324053 JT: Japanese Journal of Applied Physics MD: Oka,50,6s,602,2011,Silicon Beam Microelectromechanical Systems Resonator with a Sliding Electrode DOI: 10.1143/JJAP.50.06GH02(Journal) (6692219-N) DOI: 10.7567/JJAP.50.06GH02(Journal) ========================================================== Created: 2023-01-05 12:06:53 ConfID: 6692216 CauseID: 1557137319 OtherID: 1363323939 JT: Japanese Journal of Applied Physics MD: Joung,50,6r,65202,2011,Tunneling Resistances Associated with Classical-to-Quantum Fluctuations in Single Point-Contact Junction DOI: 10.1143/JJAP.50.065202(Journal) (6692216-N) DOI: 10.7567/JJAP.50.065202(Journal) ========================================================== Created: 2023-01-05 12:06:54 ConfID: 6692217 CauseID: 1557137320 OtherID: 1363323867 JT: Japanese Journal of Applied Physics MD: Shim,50,5s2,514,2011,Spectroscopic Ellipsometry Studies of CdS:O Layers for Solar Cells DOI: 10.1143/JJAP.50.05FC14(Journal) (6692217-N) DOI: 10.7567/JJAP.50.05FC14(Journal) ========================================================== Created: 2023-01-05 12:06:12 ConfID: 6692166 CauseID: 1557137245 OtherID: 1363323825 JT: Japanese Journal of Applied Physics MD: Suzuki,50,5s1,510,2011,Application of Novel Ultrasonic Cleaning Equipment That Uses the Waveguide Mode for the Single-Wafer Cleaning Process DOI: 10.1143/JJAP.50.05EC10(Journal) (6692166-N) DOI: 10.7567/JJAP.50.05EC10(Journal) ========================================================== Created: 2023-01-05 12:06:13 ConfID: 6692167 CauseID: 1557137246 OtherID: 1363323809 JT: Japanese Journal of Applied Physics MD: Sakamoto,50,5s1,503,2011,Improved Step Coverage of Cu Seed Layers by Magnetic-Field-Assisted Ionized Sputtering DOI: 10.1143/JJAP.50.05EA03(Journal) (6692167-N) DOI: 10.7567/JJAP.50.05EA03(Journal) ========================================================== Created: 2023-01-05 12:06:10 ConfID: 6692164 CauseID: 1557137243 OtherID: 1363323806 JT: Japanese Journal of Applied Physics MD: Smirnov,50,5s1,503,2011,Evaluation of a New Advanced Low-k Material DOI: 10.1143/JJAP.50.05EB03(Journal) (6692164-N) DOI: 10.7567/JJAP.50.05EB03(Journal) ========================================================== Created: 2023-01-05 12:06:11 ConfID: 6692165 CauseID: 1557137244 OtherID: 1363323785 JT: Japanese Journal of Applied Physics MD: Kim,50,5r,56501,2011,Gallic Acid as a Complexing Agent for Copper Chemical Mechanical Polishing Slurries at Neutral pH DOI: 10.1143/JJAP.50.056501(Journal) (6692165-N) DOI: 10.7567/JJAP.50.056501(Journal) ========================================================== Created: 2023-01-05 12:06:09 ConfID: 6692162 CauseID: 1557137239 OtherID: 1363323813 JT: Japanese Journal of Applied Physics MD: Harada,50,5s1,506,2011,Study of Cu-Inhibitor State for Post-Chemical Mechanical Polishing Cleaning DOI: 10.1143/JJAP.50.05EC06(Journal) (6692162-N) DOI: 10.7567/JJAP.50.05EC06(Journal) ========================================================== Created: 2023-01-05 12:06:10 ConfID: 6692163 CauseID: 1557137242 OtherID: 1363323928 JT: Japanese Journal of Applied Physics MD: Mukhopadhyay,50,6r,61602,2011,Lateral Photocurrent Scanning of Donor and Acceptor Polymers on Graphene Coated Substrates DOI: 10.1143/JJAP.50.061602(Journal) (6692163-N) DOI: 10.7567/JJAP.50.061602(Journal) ========================================================== Created: 2023-01-05 12:06:07 ConfID: 6692160 CauseID: 1557137237 OtherID: 1363323814 JT: Japanese Journal of Applied Physics MD: Katagiri,50,5s1,501,2011,Improvement in Electrical Properties of Carbon Nanotube Via Interconnects DOI: 10.1143/JJAP.50.05EF01(Journal) (6692160-N) DOI: 10.7567/JJAP.50.05EF01(Journal) ========================================================== Created: 2023-01-05 12:06:08 ConfID: 6692161 CauseID: 1557137238 OtherID: 1363323827 JT: Japanese Journal of Applied Physics MD: Jiao,50,5s1,502,2011,Tribological, Thermal, and Kinetic Characterization of 300-mm Copper Chemical Mechanical Planarization Process DOI: 10.1143/JJAP.50.05EC02(Journal) (6692161-N) DOI: 10.7567/JJAP.50.05EC02(Journal) ========================================================== Created: 2023-01-05 12:06:19 ConfID: 6692174 CauseID: 1557137258 OtherID: 1363323915 JT: Japanese Journal of Applied Physics MD: Choi,50,6r,62502,2011,Current-Controlled Tunable Fiber Multiwavelength Filter Based on Polarization-Diversity Loop Structure DOI: 10.1143/JJAP.50.062502(Journal) (6692174-N) DOI: 10.7567/JJAP.50.062502(Journal) ========================================================== Created: 2023-01-05 12:06:20 ConfID: 6692175 CauseID: 1557137259 OtherID: 1363323882 JT: Japanese Journal of Applied Physics MD: Isaeva,50,5s2,507,2011,Ab initio Phonons in Magnetic Ni2MnAl DOI: 10.1143/JJAP.50.05FE07(Journal) (6692175-N) DOI: 10.7567/JJAP.50.05FE07(Journal) ========================================================== Created: 2023-01-05 12:06:18 ConfID: 6692172 CauseID: 1557137256 OtherID: 1363323834 JT: Japanese Journal of Applied Physics MD: Shirakata,50,5s2,502,2011,Photoluminescence of Cu(In,Ga)Se2 in the Solar Cell Preparation Process DOI: 10.1143/JJAP.50.05FC02(Journal) (6692172-N) DOI: 10.7567/JJAP.50.05FC02(Journal) ========================================================== Created: 2023-01-05 12:06:18 ConfID: 6692173 CauseID: 1557137257 OtherID: 1363323859 JT: Japanese Journal of Applied Physics MD: Mammadov,50,5s2,512,2011,Comparison of Optical Parameters of Ge–As(Sb)–Se(Te) Glassy Films DOI: 10.1143/JJAP.50.05FC12(Journal) (6692173-N) DOI: 10.7567/JJAP.50.05FC12(Journal) ========================================================== Created: 2023-01-05 12:06:16 ConfID: 6692170 CauseID: 1557137254 OtherID: 1363323848 JT: Japanese Journal of Applied Physics MD: Wada,50,5s2,502,2011,Characteristics of Chemical Bonds in CuInSe2 and Its Thin-Film Deposition Processes Used to Fabricate Solar Cells DOI: 10.1143/JJAP.50.05FA02(Journal) (6692170-N) DOI: 10.7567/JJAP.50.05FA02(Journal) ========================================================== Created: 2023-01-05 12:06:17 ConfID: 6692171 CauseID: 1557137255 OtherID: 1363323851 JT: Japanese Journal of Applied Physics MD: Oshima,50,5s2,515,2011,Characteristic of Low Resistivity Fluorine-Doped SnO2 Thin Films Grown by Spray Pyrolysis DOI: 10.1143/JJAP.50.05FB15(Journal) (6692171-N) DOI: 10.7567/JJAP.50.05FB15(Journal) ========================================================== Created: 2023-01-05 12:06:15 ConfID: 6692168 CauseID: 1557137250 OtherID: 1363323865 JT: Japanese Journal of Applied Physics MD: Miyamoto,50,5s2,504,2011,Photoluminescence Study of AgInS2 by Using Confocal Microscopy System DOI: 10.1143/JJAP.50.05FC04(Journal) (6692168-N) DOI: 10.7567/JJAP.50.05FC04(Journal) ========================================================== Created: 2023-01-05 12:06:16 ConfID: 6692169 CauseID: 1557137253 OtherID: 1363323824 JT: Japanese Journal of Applied Physics MD: Wang,50,5s1,503,2011,Iridium Nanocrystal Thin-Film Transistor Nonvolatile Memory with Si3N4/SiO2 Stack of Asymmetric Tunnel Barrier DOI: 10.1143/JJAP.50.05EF03(Journal) (6692169-N) DOI: 10.7567/JJAP.50.05EF03(Journal) ========================================================== Created: 2023-01-05 12:06:29 ConfID: 6692182 CauseID: 1557137274 OtherID: 1363323940 JT: Japanese Journal of Applied Physics MD: Lin,50,6r,65002,2011,Rapid Fabrication of Silver Nanowires through Photoreduction of Silver Nitrate from an Anodic-Aluminum-Oxide Template DOI: 10.1143/JJAP.50.065002(Journal) (6692182-N) DOI: 10.7567/JJAP.50.065002(Journal) ========================================================== Created: 2023-01-05 12:06:29 ConfID: 6692183 CauseID: 1557137275 OtherID: 1363323919 JT: Japanese Journal of Applied Physics MD: Higuchi,50,6r,63001,2011,Preparation and Structural Characterization of hcp and fcc Ni Epitaxial Thin Films on Ru Underlayers with Different Orientations DOI: 10.1143/JJAP.50.063001(Journal) (6692183-N) DOI: 10.7567/JJAP.50.063001(Journal) ========================================================== Created: 2023-01-05 12:06:24 ConfID: 6692180 CauseID: 1557137267 OtherID: 1363323844 JT: Japanese Journal of Applied Physics MD: Huseynov,50,5s2,516,2011,Evaluation of Composition Reproducibility of HgCdTe Epitaxial Layers Grown in Novel Liquid Phase Epitaxy Apparatus DOI: 10.1143/JJAP.50.05FB16(Journal) (6692180-N) DOI: 10.7567/JJAP.50.05FB16(Journal) ========================================================== Created: 2023-01-05 12:06:24 ConfID: 6692181 CauseID: 1557137268 OtherID: 1363323917 JT: Japanese Journal of Applied Physics MD: Hara,50,6r,61501,2011,Aging Effect on Oxygen-Sensitive Electrical Resistance of SrTiO3 Thin Films DOI: 10.1143/JJAP.50.061501(Journal) (6692181-N) DOI: 10.7567/JJAP.50.061501(Journal) ========================================================== Created: 2023-01-05 12:06:22 ConfID: 6692178 CauseID: 1557137265 OtherID: 1363323903 JT: Japanese Journal of Applied Physics MD: Sugiyama,50,5s2,503,2011,Sulfurization Growth of SnS Thin Films and Experimental Determination of Valence Band Discontinuity for SnS-Related Solar Cells DOI: 10.1143/JJAP.50.05FH03(Journal) (6692178-N) DOI: 10.7567/JJAP.50.05FH03(Journal) ========================================================== Created: 2023-01-05 12:06:23 ConfID: 6692179 CauseID: 1557137266 OtherID: 1363323838 JT: Japanese Journal of Applied Physics MD: Harada,50,5s2,514,2011,Growth of IrOx–SnOx Films Deposited by Reactive Sputtering DOI: 10.1143/JJAP.50.05FB14(Journal) (6692179-N) DOI: 10.7567/JJAP.50.05FB14(Journal) ========================================================== Created: 2023-01-05 12:06:21 ConfID: 6692176 CauseID: 1557137261 OtherID: 1363323966 JT: Japanese Journal of Applied Physics MD: Takahashi,50,6r,66201,2011,Silicon Trench Oxidation in Downstream of Microwave Oxygen Plasma DOI: 10.1143/JJAP.50.066201(Journal) (6692176-N) DOI: 10.7567/JJAP.50.066201(Journal) ========================================================== Created: 2023-01-05 12:06:20 ConfID: 6692177 CauseID: 1557137260 OtherID: 1363323881 JT: Japanese Journal of Applied Physics MD: Bayramov,50,5s2,506,2011,Structural, Optical, and Electrical Properties of Semiconductor Compounds Studied by Means of Inelastic Light Scattering from Phonon, Electron, and Coupled Electron–Phonon Excitations: From Bulk to Nanoscale Structures DOI: 10.1143/JJAP.50.05FE06(Journal) (6692177-N) DOI: 10.7567/JJAP.50.05FE06(Journal) ========================================================== Created: 2023-01-05 12:06:28 ConfID: 6692190 CauseID: 1557137281 OtherID: 1363323836 JT: Japanese Journal of Applied Physics MD: Nagaoka,50,5s2,504,2011,Peculiarities of Linear Thermal Expansion of CuInS2 Single Crystals DOI: 10.1143/JJAP.50.05FB04(Journal) (6692190-N) DOI: 10.7567/JJAP.50.05FB04(Journal) ========================================================== Created: 2023-01-05 12:06:30 ConfID: 6692191 CauseID: 1557137282 OtherID: 1363323845 JT: Japanese Journal of Applied Physics MD: Maeda,50,5s2,509,2011,H2S Concentration Dependence of Properties of Cu2ZnSnS4 Thin Film Prepared under Nonvacuum Condition DOI: 10.1143/JJAP.50.05FB09(Journal) (6692191-N) DOI: 10.7567/JJAP.50.05FB09(Journal) ========================================================== Created: 2023-01-05 12:06:27 ConfID: 6692188 CauseID: 1557137279 OtherID: 1363323850 JT: Japanese Journal of Applied Physics MD: Kato,50,5s2,511,2011,Growth of γ-In2Se3 Thin Films by Electrostatic Spray Pyrolysis Deposition DOI: 10.1143/JJAP.50.05FB11(Journal) (6692188-N) DOI: 10.7567/JJAP.50.05FB11(Journal) ========================================================== Created: 2023-01-05 12:06:27 ConfID: 6692189 CauseID: 1557137280 OtherID: 1363323777 JT: Japanese Journal of Applied Physics MD: Tajima,50,5r,55501,2011,Carrier Gas Dependence at Initial Processes for a-Plane AlN Growth on r-Plane Sapphire Substrates by Hydride Vapor Phase Epitaxy DOI: 10.1143/JJAP.50.055501(Journal) (6692189-N) DOI: 10.7567/JJAP.50.055501(Journal) ========================================================== Created: 2023-01-05 12:06:26 ConfID: 6692186 CauseID: 1557137278 OtherID: 1363323916 JT: Japanese Journal of Applied Physics MD: Lee,50,6r,62101,2011,Enhancement of Operating Lifetime and Performance on Polymer Light Emitting Diode by Mg–Zn–F Passivation DOI: 10.1143/JJAP.50.062101(Journal) (6692186-N) DOI: 10.7567/JJAP.50.062101(Journal) ========================================================== Created: 2023-01-05 12:28:44 ConfID: 6692187 CauseID: 1557140012 OtherID: 1363320129 JT: Japanese Journal of Applied Physics MD: Seo,51,1r,10203,2012,Efficient Pump Beam Multiplexer Based on Single-Mode Fibers DOI: 10.1143/JJAP.51.010203(Journal) (6692187-N) DOI: 10.7567/JJAP.51.010203(Journal) ========================================================== Created: 2023-01-05 12:06:25 ConfID: 6692184 CauseID: 1557137276 OtherID: 1363323895 JT: Japanese Journal of Applied Physics MD: Chen,50,6r,60201,2011,General Expressions for Ellipsoidal-Valley Quantum Transport in Arbitrary Growth Direction: Non-Equilibrium Green's Function DOI: 10.1143/JJAP.50.060201(Journal) (6692184-N) DOI: 10.7567/JJAP.50.060201(Journal) ========================================================== Created: 2023-01-05 12:06:25 ConfID: 6692185 CauseID: 1557137277 OtherID: 1363323909 JT: Japanese Journal of Applied Physics MD: Tu,50,6r,60207,2011,Color Reproduction of Multi-Wavelength Digital Holography Using a Color Correction Algorithm DOI: 10.1143/JJAP.50.060207(Journal) (6692185-N) DOI: 10.7567/JJAP.50.060207(Journal) ========================================================== Created: 2023-01-05 12:05:48 ConfID: 6692134 CauseID: 1557137197 OtherID: 1363323774 JT: Japanese Journal of Applied Physics MD: Fukui,50,5r,57201,2011,Tip to Side Welding of Ultrathin Pt Wires by Joule Heating DOI: 10.1143/JJAP.50.057201(Journal) (6692134-N) DOI: 10.7567/JJAP.50.057201(Journal) ========================================================== Created: 2023-02-01 12:52:14 ConfID: 6716710 CauseID: 1560041400 OtherID: 1363321329 JT: Japanese Journal of Applied Physics MD: Yasuda,51,8s3,803,2012,On-Chip Cellomics: Constructive Understanding of Multicellular Network Using On-Chip Cellomics Technology DOI: 10.1143/JJAP.51.08KA03(Journal) (6716710-N) DOI: 10.7567/JJAP.51.08KA03(Journal) ========================================================== Created: 2023-01-05 12:05:49 ConfID: 6692135 CauseID: 1557137198 OtherID: 1363323727 JT: Japanese Journal of Applied Physics MD: Katsuno,50,4s,404,2011,Effects of Surface and Crystalline Defects on Reverse Characteristics of 4H-SiC Junction Barrier Schottky Diodes DOI: 10.1143/JJAP.50.04DP04(Journal) (6692135-N) DOI: 10.7567/JJAP.50.04DP04(Journal) ========================================================== Created: 2023-02-01 12:52:12 ConfID: 6716711 CauseID: 1560041397 OtherID: 1363321296 JT: Japanese Journal of Applied Physics MD: Shimizu,51,8s1,805,2012,Surface Modification of GaN Substrate by Atmospheric Pressure Microplasma DOI: 10.1143/JJAP.51.08HB05(Journal) (6716711-N) DOI: 10.7567/JJAP.51.08HB05(Journal) ========================================================== Created: 2023-01-05 12:05:47 ConfID: 6692132 CauseID: 1557137195 OtherID: 1363323769 JT: Japanese Journal of Applied Physics MD: Yamashita,50,5r,55001,2011,Theoretical Investigation of Effect of Side Facets on Adsorption–Desorption Behaviors of In and P Atoms at Top Layers in InP Nanowires DOI: 10.1143/JJAP.50.055001(Journal) (6692132-N) DOI: 10.7567/JJAP.50.055001(Journal) ========================================================== Created: 2023-02-01 12:52:12 ConfID: 6716708 CauseID: 1560041396 OtherID: 1363321204 JT: Japanese Journal of Applied Physics MD: Ara,51,7s,705,2012,Performance Comparison of Subgrid Techniques in Acoustic Simulation Using the Type-M and Type-C Constrained Interpolation Profile Methods DOI: 10.1143/JJAP.51.07GG05(Journal) (6716708-N) DOI: 10.7567/JJAP.51.07GG05(Journal) ========================================================== Created: 2023-01-05 12:05:48 ConfID: 6692133 CauseID: 1557137196 OtherID: 1363323780 JT: Japanese Journal of Applied Physics MD: Goda,50,5r,56601,2011,Characterization of Bistable Hybrid-Twisted Nematic Liquid Crystal Mode by Means of Renormalized Transmission Spectroscopic Ellipsometry DOI: 10.1143/JJAP.50.056601(Journal) (6692133-N) DOI: 10.7567/JJAP.50.056601(Journal) ========================================================== Created: 2023-02-01 12:52:11 ConfID: 6716709 CauseID: 1560041395 OtherID: 1363321307 JT: Japanese Journal of Applied Physics MD: Mikami,51,8s2,801,2012,Experimental Demonstration of Optical Phase Multilevel Recording in Microhologram DOI: 10.1143/JJAP.51.08JD01(Journal) (6716709-N) DOI: 10.7567/JJAP.51.08JD01(Journal) ========================================================== Created: 2023-01-05 12:05:46 ConfID: 6692130 CauseID: 1557137193 OtherID: 1363323808 JT: Japanese Journal of Applied Physics MD: Sari,50,5s1,508,2011,Ru/WNx Bilayers as Diffusion Barriers for Cu Interconnects DOI: 10.1143/JJAP.50.05EA08(Journal) (6692130-N) DOI: 10.7567/JJAP.50.05EA08(Journal) ========================================================== Created: 2023-02-01 12:52:09 ConfID: 6716706 CauseID: 1560041388 OtherID: 1363321289 JT: Japanese Journal of Applied Physics MD: Song,51,8s1,801,2012,Focal Adhesion of Osteoblastic Cells on Titanium Surface with Amine Functionalities Formed by Plasma Polymerization DOI: 10.1143/JJAP.51.08HE01(Journal) (6716706-N) DOI: 10.7567/JJAP.51.08HE01(Journal) ========================================================== Created: 2023-01-05 12:05:46 ConfID: 6692131 CauseID: 1557137194 OtherID: 1363323771 JT: Japanese Journal of Applied Physics MD: Dipojono,50,5r,55702,2011,Density Functional Theory Study on the Interaction of O2 Molecule with Cobalt–(6)Pyrrole Clusters DOI: 10.1143/JJAP.50.055702(Journal) (6692131-N) DOI: 10.7567/JJAP.50.055702(Journal) ========================================================== Created: 2023-02-01 12:52:10 ConfID: 6716707 CauseID: 1560041393 OtherID: 1363321339 JT: Japanese Journal of Applied Physics MD: Kim,51,8s2,806,2012,Two-Dimensional Iterative Decoding Schemes for Holographic Data Storage Systems DOI: 10.1143/JJAP.51.08JD06(Journal) (6716707-N) DOI: 10.7567/JJAP.51.08JD06(Journal) ========================================================== Created: 2023-01-05 12:05:44 ConfID: 6692128 CauseID: 1557137189 OtherID: 1363323784 JT: Japanese Journal of Applied Physics MD: Kanda,50,5r,55801,2011,Effect of the Soft X-rays on Highly Hydrogenated Diamond-Like Carbon Films DOI: 10.1143/JJAP.50.055801(Journal) (6692128-N) DOI: 10.7567/JJAP.50.055801(Journal) ========================================================== Created: 2023-02-01 12:52:10 ConfID: 6716704 CauseID: 1560041392 OtherID: 1363321341 JT: Japanese Journal of Applied Physics MD: Yim,51,8s3,807,2012,Nanomechanical Thermal Analysis of Indium Films Using Silicon Microcantilevers DOI: 10.1143/JJAP.51.08KB07(Journal) (6716704-N) DOI: 10.7567/JJAP.51.08KB07(Journal) ========================================================== Created: 2023-01-05 12:05:45 ConfID: 6692129 CauseID: 1557137191 OtherID: 1363323761 JT: Japanese Journal of Applied Physics MD: Kim,50,5r,55003,2011,Effect of Pd Reactant on One-Dimensional Growth of ZnO on Si Substrate by Thermal Evaporation Method DOI: 10.1143/JJAP.50.055003(Journal) (6692129-N) DOI: 10.7567/JJAP.50.055003(Journal) ========================================================== Created: 2023-02-01 12:52:09 ConfID: 6716705 CauseID: 1560041387 OtherID: 1363321295 JT: Japanese Journal of Applied Physics MD: Lee,51,8s1,803,2012,Biocompatibility of Cation Coated on Plasma-Polymerized Ti Surface DOI: 10.1143/JJAP.51.08HE03(Journal) (6716705-N) DOI: 10.7567/JJAP.51.08HE03(Journal) ========================================================== Created: 2023-01-05 12:05:53 ConfID: 6692142 CauseID: 1557137208 OtherID: 1363323805 JT: Japanese Journal of Applied Physics MD: Oshida,50,5s1,504,2011,Effects of Postetching Treatment on Molecular-Pore-Stacking/Cu Interconnects for 28 nm Node and Beyond DOI: 10.1143/JJAP.50.05EB04(Journal) (6692142-N) DOI: 10.7567/JJAP.50.05EB04(Journal) ========================================================== Created: 2023-02-01 12:52:17 ConfID: 6716718 CauseID: 1560041414 OtherID: 1363321335 JT: Japanese Journal of Applied Physics MD: Kimura,51,8s3,805,2012,Investigations of Local Electrical Characteristics of a Pentacene Thin Film by Point-Contact Current Imaging Atomic Force Microscopy DOI: 10.1143/JJAP.51.08KB05(Journal) (6716718-N) DOI: 10.7567/JJAP.51.08KB05(Journal) ========================================================== Created: 2023-01-05 12:05:54 ConfID: 6692143 CauseID: 1557137209 OtherID: 1363323781 JT: Japanese Journal of Applied Physics MD: Takami,50,5r,55804,2011,High Temperature-Coefficient of Resistance at Room Temperature in W-Doped VO2 Thin Films on Al2O3 Substrate and Their Thickness Dependence DOI: 10.1143/JJAP.50.055804(Journal) (6692143-N) DOI: 10.7567/JJAP.50.055804(Journal) ========================================================== Created: 2023-02-01 12:52:17 ConfID: 6716719 CauseID: 1560041415 OtherID: 1363321346 JT: Japanese Journal of Applied Physics MD: Takeda,51,8s2,802,2012,Subwavelength Focusing Technique Using a Plasmonic Lens DOI: 10.1143/JJAP.51.08JF02(Journal) (6716719-N) DOI: 10.7567/JJAP.51.08JF02(Journal) ========================================================== Created: 2023-01-05 12:05:52 ConfID: 6692140 CauseID: 1557137206 OtherID: 1363323908 JT: Japanese Journal of Applied Physics MD: Karaomerlioglu,50,5s2,505,2011,Reflectance Profile of BaTiO3 on Multilayer Antireflection Coating Systems DOI: 10.1143/JJAP.50.05FH05(Journal) (6692140-N) DOI: 10.7567/JJAP.50.05FH05(Journal) ========================================================== Created: 2023-02-01 12:52:15 ConfID: 6716716 CauseID: 1560041411 OtherID: 1363321342 JT: Japanese Journal of Applied Physics MD: Ando,51,8s3,802,2012,High-Speed Atomic Force Microscopy DOI: 10.1143/JJAP.51.08KA02(Journal) (6716716-N) DOI: 10.7567/JJAP.51.08KA02(Journal) ========================================================== Created: 2023-01-05 12:05:53 ConfID: 6692141 CauseID: 1557137207 OtherID: 1363323847 JT: Japanese Journal of Applied Physics MD: Akaki,50,5s2,506,2011,Effect of H2S Annealing on Ag-Rich Ag–In–S Thin Films Prepared by Vacuum Evaporation DOI: 10.1143/JJAP.50.05FB06(Journal) (6692141-N) DOI: 10.7567/JJAP.50.05FB06(Journal) ========================================================== Created: 2023-02-01 12:52:16 ConfID: 6716717 CauseID: 1560041413 OtherID: 1363321450 JT: Japanese Journal of Applied Physics MD: Kim,51,9s1,901,2012,Preparation and Characterization of Ba(ZrxTi1-x)O3 Thin Films Using Reactive Sputtering Method DOI: 10.1143/JJAP.51.09LA01(Journal) (6716717-N) DOI: 10.7567/JJAP.51.09LA01(Journal) ========================================================== Created: 2023-01-05 12:05:51 ConfID: 6692138 CauseID: 1557137203 OtherID: 1363323766 JT: Japanese Journal of Applied Physics MD: Akyol,50,5r,52101,2011,N-Polar III–Nitride Green (540 nm) Light Emitting Diode DOI: 10.1143/JJAP.50.052101(Journal) (6692138-N) DOI: 10.7567/JJAP.50.052101(Journal) ========================================================== Created: 2023-02-01 12:52:15 ConfID: 6716714 CauseID: 1560041410 OtherID: 1363321336 JT: Japanese Journal of Applied Physics MD: Kim,51,8s2,808,2012,Error Correcting Capable 2/4 Modulation Code Using Trellis Coded Modulation in Holographic Data Storage DOI: 10.1143/JJAP.51.08JD08(Journal) (6716714-N) DOI: 10.7567/JJAP.51.08JD08(Journal) ========================================================== Created: 2023-01-05 12:05:52 ConfID: 6692139 CauseID: 1557137205 OtherID: 1363323786 JT: Japanese Journal of Applied Physics MD: Yoshimura,50,5r,56701,2011,Evaluation of a Delay-Line Detector Combined with Analog-to-Digital Converters as the Ion Detection System for Stigmatic Imaging Mass Spectrometry DOI: 10.1143/JJAP.50.056701(Journal) (6692139-N) DOI: 10.7567/JJAP.50.056701(Journal) ========================================================== Created: 2023-02-01 12:52:16 ConfID: 6716715 CauseID: 1560041412 OtherID: 1363321302 JT: Japanese Journal of Applied Physics MD: Cho,51,8s1,804,2012,Surface Modification of Plasma Polymer Thin Films for DNA Fixation by Atmospheric Pressure Plasma Treatment DOI: 10.1143/JJAP.51.08HE04(Journal) (6716715-N) DOI: 10.7567/JJAP.51.08HE04(Journal) ========================================================== Created: 2023-01-05 12:05:50 ConfID: 6692136 CauseID: 1557137200 OtherID: 1363323852 JT: Japanese Journal of Applied Physics MD: Tsuboi,50,5s2,503,2011,Epitaxial Growth of Chalcopyrite-Type CuInS2 Films on GaAs(001) Substrates by Evaporation Method with Elemental Sources DOI: 10.1143/JJAP.50.05FB03(Journal) (6692136-N) DOI: 10.7567/JJAP.50.05FB03(Journal) ========================================================== Created: 2023-02-01 12:52:13 ConfID: 6716712 CauseID: 1560041398 OtherID: 1363321279 JT: Japanese Journal of Applied Physics MD: Kinoshita,51,8s1,801,2012,Damage Recovery by Reductive Chemistry after Methanol-Based Plasma Etch to Fabricate Magnetic Tunnel Junctions DOI: 10.1143/JJAP.51.08HA01(Journal) (6716712-N) DOI: 10.7567/JJAP.51.08HA01(Journal) ========================================================== Created: 2023-01-05 12:05:50 ConfID: 6692137 CauseID: 1557137202 OtherID: 1363323729 JT: Japanese Journal of Applied Physics MD: Onodera,50,4s,406,2011,Multiscale Simulation of Dye-Sensitized Solar Cells Considering Schottky Barrier Effect at Photoelectrode DOI: 10.1143/JJAP.50.04DP06(Journal) (6692137-N) DOI: 10.7567/JJAP.50.04DP06(Journal) ========================================================== Created: 2023-02-01 12:52:19 ConfID: 6716713 CauseID: 1560041408 OtherID: 1363321347 JT: Japanese Journal of Applied Physics MD: Kwon,51,8s2,802,2012,High Density Recording with Guided-Layer Media DOI: 10.1143/JJAP.51.08JE02(Journal) (6716713-N) DOI: 10.7567/JJAP.51.08JE02(Journal) ========================================================== Created: 2023-01-05 12:05:59 ConfID: 6692150 CauseID: 1557137220 OtherID: 1363323885 JT: Japanese Journal of Applied Physics MD: Seyid-Rzayeva,50,5s2,509,2011,Influence of Exchange Interaction on Phonon–Polaron Properties in Diluted Magnetic Semiconductors DOI: 10.1143/JJAP.50.05FE09(Journal) (6692150-N) DOI: 10.7567/JJAP.50.05FE09(Journal) ========================================================== Created: 2023-01-05 12:06:03 ConfID: 6692151 CauseID: 1557137222 OtherID: 1363323837 JT: Japanese Journal of Applied Physics MD: Matsumoto,50,5s2,513,2011,Effects of Ga Doping and Substrate Temperature on Electrical Properties of ZnO Transparent Conducting Films Grown by Plasma-Assisted Deposition DOI: 10.1143/JJAP.50.05FB13(Journal) (6692151-N) DOI: 10.7567/JJAP.50.05FB13(Journal) ========================================================== Created: 2023-01-05 12:05:57 ConfID: 6692148 CauseID: 1557137217 OtherID: 1363323826 JT: Japanese Journal of Applied Physics MD: Miyake,50,5s1,501,2011,Formation and Evaluation of Electroless-Plated Barrier Films for High-Aspect-Ratio Through-Si Vias DOI: 10.1143/JJAP.50.05ED01(Journal) (6692148-N) DOI: 10.7567/JJAP.50.05ED01(Journal) ========================================================== Created: 2023-01-05 12:05:59 ConfID: 6692149 CauseID: 1557137219 OtherID: 1363323872 JT: Japanese Journal of Applied Physics MD: Happo,50,5s2,511,2011,Local Structure around Mn Atoms in IV–VI Ferromagnetic Semiconductor Ge0.6Mn0.4Te Investigated by X-ray Fluorescence Holography DOI: 10.1143/JJAP.50.05FC11(Journal) (6692149-N) DOI: 10.7567/JJAP.50.05FC11(Journal) ========================================================== Created: 2023-01-05 12:05:56 ConfID: 6692146 CauseID: 1557137214 OtherID: 1363323884 JT: Japanese Journal of Applied Physics MD: Pradhan,50,5s2,502,2011,The Phonon Percolation Scheme for Alloys: Extension to the Entire Lattice Dynamics and Pressure Dependence DOI: 10.1143/JJAP.50.05FE02(Journal) (6692146-N) DOI: 10.7567/JJAP.50.05FE02(Journal) ========================================================== Created: 2023-02-01 12:52:18 ConfID: 6716722 CauseID: 1560041416 OtherID: 1363321357 JT: Japanese Journal of Applied Physics MD: Takami,51,8s3,812,2012,Development of Beetle-Type Robot with Sub-Micropipette Probe DOI: 10.1143/JJAP.51.08KB12(Journal) (6716722-N) DOI: 10.7567/JJAP.51.08KB12(Journal) ========================================================== Created: 2023-01-05 12:05:56 ConfID: 6692147 CauseID: 1557137215 OtherID: 1363323802 JT: Japanese Journal of Applied Physics MD: Oka,50,5s1,506,2011,Structure-Modification Model of Porogen-Based Porous SiOC Film with Ultraviolet Curing DOI: 10.1143/JJAP.50.05EB06(Journal) (6692147-N) DOI: 10.7567/JJAP.50.05EB06(Journal) ========================================================== Created: 2023-02-01 12:52:20 ConfID: 6716723 CauseID: 1560041423 OtherID: 1363321356 JT: Japanese Journal of Applied Physics MD: Araki,51,8s3,809,2012,Atomic-Resolution Imaging of Aragonite (001) Surface in Water by Frequency Modulation Atomic Force Microscopy DOI: 10.1143/JJAP.51.08KB09(Journal) (6716723-N) DOI: 10.7567/JJAP.51.08KB09(Journal) ========================================================== Created: 2023-01-05 12:05:55 ConfID: 6692144 CauseID: 1557137212 OtherID: 1363323741 JT: Japanese Journal of Applied Physics MD: Fukamizu,50,4s,411,2011,Surface Morphology and Device Performance of CuInS2 Solar Cells Prepared by Single- and Two-Step Evaporation Methods DOI: 10.1143/JJAP.50.04DP11(Journal) (6692144-N) DOI: 10.7567/JJAP.50.04DP11(Journal) ========================================================== Created: 2023-02-01 12:52:11 ConfID: 6716720 CauseID: 1560041394 OtherID: 1363321337 JT: Japanese Journal of Applied Physics MD: Ye,51,8s3,804,2012,An Indentation Technique for Nanoscale Dynamic Viscoelastic Measurements at Elevated Temperature DOI: 10.1143/JJAP.51.08KA04(Journal) (6716720-N) DOI: 10.7567/JJAP.51.08KA04(Journal) ========================================================== Created: 2023-01-05 12:05:55 ConfID: 6692145 CauseID: 1557137213 OtherID: 1363323860 JT: Japanese Journal of Applied Physics MD: Takahashi,50,5s2,501,2011,High-Pressure Studies for Iron-Based Superconductors DOI: 10.1143/JJAP.50.05FD01(Journal) (6692145-N) DOI: 10.7567/JJAP.50.05FD01(Journal) ========================================================== Created: 2023-02-01 12:52:19 ConfID: 6716721 CauseID: 1560041417 OtherID: 1363321331 JT: Japanese Journal of Applied Physics MD: Lee,51,8s2,807,2012,Line Tracking Applied Data Acquisition Method for Holographic Data Storage System DOI: 10.1143/JJAP.51.08JD07(Journal) (6716721-N) DOI: 10.7567/JJAP.51.08JD07(Journal) ========================================================== Created: 2023-01-05 12:06:05 ConfID: 6692158 CauseID: 1557137233 OtherID: 1363323811 JT: Japanese Journal of Applied Physics MD: Furuhashi,50,5s1,507,2011,Analysis of Sidewall Damage Layer in Low-k Film Using the Interline Dielectric Capacitance Measurements DOI: 10.1143/JJAP.50.05EB07(Journal) (6692158-N) DOI: 10.7567/JJAP.50.05EB07(Journal) ========================================================== Created: 2023-01-05 12:06:06 ConfID: 6692159 CauseID: 1557137235 OtherID: 1363323795 JT: Japanese Journal of Applied Physics MD: Takeyama,50,5s1,506,2011,Atomic Layer Deposition of Thin VNx Film from Tetrakis(diethylamido)vanadium Precursor DOI: 10.1143/JJAP.50.05EA06(Journal) (6692159-N) DOI: 10.7567/JJAP.50.05EA06(Journal) ========================================================== Created: 2023-01-05 12:06:02 ConfID: 6692156 CauseID: 1557137227 OtherID: 1363323797 JT: Japanese Journal of Applied Physics MD: Sato,50,5s1,507,2011,Barrier Properties of Thin ZrNx Films Prepared by Radical-Assisted Surface Reaction DOI: 10.1143/JJAP.50.05EA07(Journal) (6692156-N) DOI: 10.7567/JJAP.50.05EA07(Journal) ========================================================== Created: 2023-01-05 12:06:05 ConfID: 6692157 CauseID: 1557137231 OtherID: 1363323804 JT: Japanese Journal of Applied Physics MD: Gu,50,5s1,502,2011,Electrical Characteristics of Novel Non-porous Low-k Dielectric Fluorocarbon on Cu Interconnects for 22 nm Generation and Beyond DOI: 10.1143/JJAP.50.05EB02(Journal) (6692157-N) DOI: 10.7567/JJAP.50.05EB02(Journal) ========================================================== Created: 2023-01-05 12:06:01 ConfID: 6692154 CauseID: 1557137226 OtherID: 1363323743 JT: Japanese Journal of Applied Physics MD: Kim,50,5r,51501,2011,Comparison of Ferroelectric and Insulating Properties of Mn-Doped BiFeO3 Films Formed on Pt, SrRuO3/Pt, and LaNiO3/Pt Bottom Electrodes by Radio-Frequency Sputtering DOI: 10.1143/JJAP.50.051501(Journal) (6692154-N) DOI: 10.7567/JJAP.50.051501(Journal) ========================================================== Created: 2023-01-05 12:06:00 ConfID: 6692155 CauseID: 1557137224 OtherID: 1363323796 JT: Japanese Journal of Applied Physics MD: Suryana,50,5s1,509,2011,Formation of Palladium Silicide Thin Layers on Si(110) Substrates DOI: 10.1143/JJAP.50.05EA09(Journal) (6692155-N) DOI: 10.7567/JJAP.50.05EA09(Journal) ========================================================== Created: 2023-01-05 12:06:04 ConfID: 6692152 CauseID: 1557137223 OtherID: 1363323855 JT: Japanese Journal of Applied Physics MD: Sardarly,50,5s2,509,2011,Superionic Conductivity in One-Dimensional Nanofibrous TlGaTe2 Crystals DOI: 10.1143/JJAP.50.05FC09(Journal) (6692152-N) DOI: 10.7567/JJAP.50.05FC09(Journal) ========================================================== Created: 2023-01-05 12:06:01 ConfID: 6692153 CauseID: 1557137225 OtherID: 1363323830 JT: Japanese Journal of Applied Physics MD: Nakatsuka,50,5s1,503,2011,Characterization of Local Strain around Through-Silicon Via Interconnects by Using X-ray Microdiffraction DOI: 10.1143/JJAP.50.05ED03(Journal) (6692153-N) DOI: 10.7567/JJAP.50.05ED03(Journal) ========================================================== Created: 2023-01-05 12:05:21 ConfID: 6692102 CauseID: 1557137144 OtherID: 1363323788 JT: Japanese Journal of Applied Physics MD: Sato,50,5r,55803,2011,Ionic Conductivity in Uniaxial Micro Strain/Stress Fields of Yttria-Stabilized Zirconia DOI: 10.1143/JJAP.50.055803(Journal) (6692102-N) DOI: 10.7567/JJAP.50.055803(Journal) ========================================================== Created: 2023-02-01 12:51:49 ConfID: 6716678 CauseID: 1560041329 OtherID: 1363321319 JT: Japanese Journal of Applied Physics MD: Jeon,51,8s2,804,2012,Nonlinear Equalization of the Super-Resolution Near-Field Structure Read-Out Signal Using the Adaptive Amplitude Nonlinear Gradient Descent Algorithm with the Sigmoid Function DOI: 10.1143/JJAP.51.08JB04(Journal) (6716678-N) DOI: 10.7567/JJAP.51.08JB04(Journal) ========================================================== Created: 2023-01-05 12:05:22 ConfID: 6692103 CauseID: 1557137145 OtherID: 1363323710 JT: Japanese Journal of Applied Physics MD: Hirose,50,4s,405,2011,Theoretical Study on Effect of SiC Crystal Structure on Carrier Transfer in Quantum Dot Solar Cells DOI: 10.1143/JJAP.50.04DP05(Journal) (6692103-N) DOI: 10.7567/JJAP.50.04DP05(Journal) ========================================================== Created: 2023-02-01 12:51:54 ConfID: 6716679 CauseID: 1560041335 OtherID: 1363321311 JT: Japanese Journal of Applied Physics MD: Park,51,8s2,803,2012,Soft-Encoding Scheme of 3/4 Tone-Controllable Code for Channel Iteration of Low-Density Parity-Check Code on the Holographic Data Storage DOI: 10.1143/JJAP.51.08JD03(Journal) (6716679-N) DOI: 10.7567/JJAP.51.08JD03(Journal) ========================================================== Created: 2023-01-05 12:05:20 ConfID: 6692100 CauseID: 1557137141 OtherID: 1363323768 JT: Japanese Journal of Applied Physics MD: Nakanishi,50,5r,51702,2011,Relation between Monomer Structure and Image Sticking Phenomenon of Polymer-Sustained-Alignment Liquid Crystal Displays DOI: 10.1143/JJAP.50.051702(Journal) (6692100-N) DOI: 10.7567/JJAP.50.051702(Journal) ========================================================== Created: 2023-02-01 12:51:47 ConfID: 6716676 CauseID: 1560041326 OtherID: 1363321291 JT: Japanese Journal of Applied Physics MD: Sawada,51,8s1,802,2012,Segmented Electrode Plasma Source with Anti-Phase Discharge DOI: 10.1143/JJAP.51.08HD02(Journal) (6716676-N) DOI: 10.7567/JJAP.51.08HD02(Journal) ========================================================== Created: 2023-01-05 12:05:21 ConfID: 6692101 CauseID: 1557137143 OtherID: 1363323740 JT: Japanese Journal of Applied Physics MD: Yim,50,5r,50204,2011,Power Dependent Micro-Photoluminescence of Green-InGaN/GaN Multiple Quantum Wells DOI: 10.1143/JJAP.50.050204(Journal) (6692101-N) DOI: 10.7567/JJAP.50.050204(Journal) ========================================================== Created: 2023-02-01 12:51:49 ConfID: 6716677 CauseID: 1560041328 OtherID: 1363321344 JT: Japanese Journal of Applied Physics MD: Ikeuchi,51,8s3,802,2012,Atomically Resolved Observations of Antiphase Domain Boundaries in Epitaxial Fe3O4 Films on MgO(001) by Scanning Tunneling Microscopy DOI: 10.1143/JJAP.51.08KB02(Journal) (6716677-N) DOI: 10.7567/JJAP.51.08KB02(Journal) ========================================================== Created: 2023-01-05 12:05:19 ConfID: 6692098 CauseID: 1557137132 OtherID: 1363323762 JT: Japanese Journal of Applied Physics MD: Nishinaga,50,5r,52302,2011,Effect of Excitons in AlGaAs/GaAs Superlattice Solar Cells DOI: 10.1143/JJAP.50.052302(Journal) (6692098-N) DOI: 10.7567/JJAP.50.052302(Journal) ========================================================== Created: 2023-02-01 12:51:47 ConfID: 6716674 CauseID: 1560041325 OtherID: 1363321310 JT: Japanese Journal of Applied Physics MD: Takeshita,51,8s2,803,2012,Real-Time Write Strategy Optimization Method for Optical Discs DOI: 10.1143/JJAP.51.08JA03(Journal) (6716674-N) DOI: 10.7567/JJAP.51.08JA03(Journal) ========================================================== Created: 2023-01-05 12:05:19 ConfID: 6692099 CauseID: 1557137133 OtherID: 1363323841 JT: Japanese Journal of Applied Physics MD: Sato,50,5s2,505,2011,Morphological and Structural Changes in Cu(In,Ga)Se2 Thin Films by Selenization Using Diethylselenide DOI: 10.1143/JJAP.50.05FB05(Journal) (6692099-N) DOI: 10.7567/JJAP.50.05FB05(Journal) ========================================================== Created: 2023-02-01 12:51:48 ConfID: 6716675 CauseID: 1560041327 OtherID: 1363321187 JT: Japanese Journal of Applied Physics MD: Yamakawa,51,7s,712,2012,Tissue Viscoelasticity Imaging Using Vibration and Ultrasound Coupler Gel DOI: 10.1143/JJAP.51.07GF12(Journal) (6716675-N) DOI: 10.7567/JJAP.51.07GF12(Journal) ========================================================== Created: 2023-01-05 12:05:17 ConfID: 6692096 CauseID: 1557137130 OtherID: 1363323746 JT: Japanese Journal of Applied Physics MD: Saci,50,5r,51301,2011,Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films DOI: 10.1143/JJAP.50.051301(Journal) (6692096-N) DOI: 10.7567/JJAP.50.051301(Journal) ========================================================== Created: 2023-02-01 12:51:45 ConfID: 6716672 CauseID: 1560041321 OtherID: 1363321199 JT: Japanese Journal of Applied Physics MD: Yoshida,51,7s,717,2012,Tissue-Mimicking Materials Using Segmented Polyurethane Gel and Their Acoustic Properties DOI: 10.1143/JJAP.51.07GF17(Journal) (6716672-N) DOI: 10.7567/JJAP.51.07GF17(Journal) ========================================================== Created: 2023-01-05 12:05:18 ConfID: 6692097 CauseID: 1557137131 OtherID: 1363323732 JT: Japanese Journal of Applied Physics MD: Kato,50,5r,50202,2011,Organic Electrodes Consisting of Dianthratetrathiafulvalene and Fullerene and Their Application in Organic Field Effect Transistors DOI: 10.1143/JJAP.50.050202(Journal) (6692097-N) DOI: 10.7567/JJAP.50.050202(Journal) ========================================================== Created: 2023-02-01 12:51:46 ConfID: 6716673 CauseID: 1560041323 OtherID: 1363321283 JT: Japanese Journal of Applied Physics MD: Ito,51,8s1,801,2012,Si Damage Due to Oblique-Angle Ion Impact Relevant for Vertical Gate Etching Processes DOI: 10.1143/JJAP.51.08HB01(Journal) (6716673-N) DOI: 10.7567/JJAP.51.08HB01(Journal) ========================================================== Created: 2023-01-05 12:05:27 ConfID: 6692110 CauseID: 1557137157 OtherID: 1363323760 JT: Japanese Journal of Applied Physics MD: Weis,50,5r,51601,2011,Observation of Continuous and Quantized Domain Size and Shape Evolution in Monolayers at Air–Water Interface DOI: 10.1143/JJAP.50.051601(Journal) (6692110-N) DOI: 10.7567/JJAP.50.051601(Journal) ========================================================== Created: 2023-02-01 12:51:59 ConfID: 6716686 CauseID: 1560041351 OtherID: 1363321313 JT: Japanese Journal of Applied Physics MD: Kong,51,8s2,807,2012,Turbo Equalization Scheme between Partial Response Maximum Likelihood Detector and Viterbi Decoder for 2/4 Modulation Code in Holographic Data Storage Systems DOI: 10.1143/JJAP.51.08JB07(Journal) (6716686-N) DOI: 10.7567/JJAP.51.08JB07(Journal) ========================================================== Created: 2023-01-05 12:05:28 ConfID: 6692111 CauseID: 1557137158 OtherID: 1363323829 JT: Japanese Journal of Applied Physics MD: Gu,50,5s1,507,2011,Tribological Effects of Brush Scrubbing in Post Chemical Mechanical Planarization Cleaning on Electrical Characteristics in Novel Non-porous Low-k Dielectric Fluorocarbon on Cu Interconnects DOI: 10.1143/JJAP.50.05EC07(Journal) (6692111-N) DOI: 10.7567/JJAP.50.05EC07(Journal) ========================================================== Created: 2023-02-01 12:51:59 ConfID: 6716687 CauseID: 1560041352 OtherID: 1363321343 JT: Japanese Journal of Applied Physics MD: Okada,51,8s3,804,2012,Study of MgAl2O4(111) Spinel Surface Using Noncontact Atomic Force Microscopy DOI: 10.1143/JJAP.51.08KB04(Journal) (6716687-N) DOI: 10.7567/JJAP.51.08KB04(Journal) ========================================================== Created: 2023-01-05 12:05:26 ConfID: 6692108 CauseID: 1557137155 OtherID: 1363323747 JT: Japanese Journal of Applied Physics MD: Okamoto,50,4s,410,2011,Application of Sputtered ZnO1-xSx Buffer Layers for Cu(In,Ga)Se2 Solar Cells DOI: 10.1143/JJAP.50.04DP10(Journal) (6692108-N) DOI: 10.7567/JJAP.50.04DP10(Journal) ========================================================== Created: 2023-02-01 12:51:55 ConfID: 6716684 CauseID: 1560041348 OtherID: 1363321163 JT: Japanese Journal of Applied Physics MD: Sahashi,51,7s,702,2012,Relation between Acoustic Impedance and Sound Intensity Amplification in a Stack of Standing-Wave Thermoacoustic Prime Mover DOI: 10.1143/JJAP.51.07GE02(Journal) (6716684-N) DOI: 10.7567/JJAP.51.07GE02(Journal) ========================================================== Created: 2023-01-05 12:05:27 ConfID: 6692109 CauseID: 1557137156 OtherID: 1363324021 JT: Japanese Journal of Applied Physics MD: Hsu,50,6s,609,2011,Dye-Sensitized Solar Cell with Photoanode Made with Polystyrene-Ball-Embedded TiO2 Pastes DOI: 10.1143/JJAP.50.06GF09(Journal) (6692109-N) DOI: 10.7567/JJAP.50.06GF09(Journal) ========================================================== Created: 2023-02-01 12:51:58 ConfID: 6716685 CauseID: 1560041350 OtherID: 1363321168 JT: Japanese Journal of Applied Physics MD: Ono,51,7s,708,2012,Stress Analysis of Contact Surface in Ultrasonically Forced Insertion Process DOI: 10.1143/JJAP.51.07GE08(Journal) (6716685-N) DOI: 10.7567/JJAP.51.07GE08(Journal) ========================================================== Created: 2023-01-05 12:05:25 ConfID: 6692106 CauseID: 1557137153 OtherID: 1363323907 JT: Japanese Journal of Applied Physics MD: Lee,50,6r,60204,2011,Flexible Ferroelectric Liquid Crystal Cell Stabilized by Column Spacer and Polymer Wall: Influence of Bending and Pressing on the Mechanical Stability DOI: 10.1143/JJAP.50.060204(Journal) (6692106-N) DOI: 10.7567/JJAP.50.060204(Journal) ========================================================== Created: 2023-02-01 12:51:52 ConfID: 6716682 CauseID: 1560041340 OtherID: 1363321328 JT: Japanese Journal of Applied Physics MD: Kim,51,8s2,809,2012,Soft-Decision Viterbi Decoding Scheme and a New Reliability Metric for 4/6 Modulation Code in Holographic Data Storage DOI: 10.1143/JJAP.51.08JD09(Journal) (6716682-N) DOI: 10.7567/JJAP.51.08JD09(Journal) ========================================================== Created: 2023-01-05 12:05:26 ConfID: 6692107 CauseID: 1557137154 OtherID: 1363323778 JT: Japanese Journal of Applied Physics MD: Wungu,50,5r,55701,2011,Effect of Lithium Absorption at Tetrahedral Site and Isomorphic Substitution on Montmorillonite Properties: A Density Functional Theory Study DOI: 10.1143/JJAP.50.055701(Journal) (6692107-N) DOI: 10.7567/JJAP.50.055701(Journal) ========================================================== Created: 2023-02-01 12:51:52 ConfID: 6716683 CauseID: 1560041341 OtherID: 1363321360 JT: Japanese Journal of Applied Physics MD: Afrin,51,8s3,810,2012,Interaction of Serum Proteins with Surface of Hemodialysis Fiber Membranes DOI: 10.1143/JJAP.51.08KB10(Journal) (6716683-N) DOI: 10.7567/JJAP.51.08KB10(Journal) ========================================================== Created: 2023-01-05 12:05:23 ConfID: 6692104 CauseID: 1557137146 OtherID: 1363323839 JT: Japanese Journal of Applied Physics MD: Uchitomi,50,5s2,502,2011,Room-Temperature Ferromagnetism in (Zn,Mn,Sn)As2 Thin Films Applicable to InP-Based Spintronic Devices DOI: 10.1143/JJAP.50.05FB02(Journal) (6692104-N) DOI: 10.7567/JJAP.50.05FB02(Journal) ========================================================== Created: 2023-02-01 12:51:50 ConfID: 6716680 CauseID: 1560041337 OtherID: 1363321318 JT: Japanese Journal of Applied Physics MD: Ogata,51,8s2,805,2012,High Precision Tracking Control based on Pseudo-Inverse Feedforward Control System for Next-Generation Optical Disks DOI: 10.1143/JJAP.51.08JA05(Journal) (6716680-N) DOI: 10.7567/JJAP.51.08JA05(Journal) ========================================================== Created: 2023-01-05 12:05:24 ConfID: 6692105 CauseID: 1557137148 OtherID: 1363323764 JT: Japanese Journal of Applied Physics MD: Kim,50,5r,51701,2011,Hybrid Alignment Induced by Asymmetric Photopolymerization of Liquid Crystal-Reactive Mesogen Composition between Two Plastic Substrates DOI: 10.1143/JJAP.50.051701(Journal) (6692105-N) DOI: 10.7567/JJAP.50.051701(Journal) ========================================================== Created: 2023-02-01 12:51:51 ConfID: 6716681 CauseID: 1560041339 OtherID: 1363321217 JT: Japanese Journal of Applied Physics MD: Tsuchiya,51,7s,711,2012,Basic Study of Properties of Planate Acoustic Lens Constructed with Phononic Crystal Structure DOI: 10.1143/JJAP.51.07GG11(Journal) (6716681-N) DOI: 10.7567/JJAP.51.07GG11(Journal) ========================================================== Created: 2023-01-05 12:05:33 ConfID: 6692118 CauseID: 1557137172 OtherID: 1363323798 JT: Japanese Journal of Applied Physics MD: Lin,50,5s1,504,2011,New Copper Alloy, Cu(SnNx), Films Suitable for More Thermally Stable, Electrically Reliable Interconnects and Lower-Leakage Current Capacitors DOI: 10.1143/JJAP.50.05EA04(Journal) (6692118-N) DOI: 10.7567/JJAP.50.05EA04(Journal) ========================================================== Created: 2023-02-01 12:52:03 ConfID: 6716694 CauseID: 1560041365 OtherID: 1363321322 JT: Japanese Journal of Applied Physics MD: Kim,51,8s2,805,2012,Two-Dimensional Equalization Using Bilinear Recursive Polynomial Model for Holographic Data Storage Systems DOI: 10.1143/JJAP.51.08JD05(Journal) (6716694-N) DOI: 10.7567/JJAP.51.08JD05(Journal) ========================================================== Created: 2023-01-05 12:05:34 ConfID: 6692119 CauseID: 1557137173 OtherID: 1363323754 JT: Japanese Journal of Applied Physics MD: Tsai,50,5r,52102,2011,High Extraction Efficiency of GaN-Based Vertical-Injection Light-Emitting Diodes Using Distinctive Indium–Tin-Oxide Nanorod by Glancing-Angle Deposition DOI: 10.1143/JJAP.50.052102(Journal) (6692119-N) DOI: 10.7567/JJAP.50.052102(Journal) ========================================================== Created: 2023-02-01 12:52:04 ConfID: 6716695 CauseID: 1560041366 OtherID: 1363321201 JT: Japanese Journal of Applied Physics MD: Kondo,51,7s,710,2012,Experimental Validation of Displacement Vector Measurement Based on Two-Dimensional Modulation Method with Virtual Hyperbolic Scanning DOI: 10.1143/JJAP.51.07GF10(Journal) (6716695-N) DOI: 10.7567/JJAP.51.07GF10(Journal) ========================================================== Created: 2023-01-05 12:05:32 ConfID: 6692116 CauseID: 1557137170 OtherID: 1363323803 JT: Japanese Journal of Applied Physics MD: Shimizu,50,5s1,501,2011,Isobutyl Silane Precursors for SiCH Low-k Cap Layer beyond the 22 nm Node: Analysis of Film Structure for Compatibility of Lower k-value and High Barrier Properties DOI: 10.1143/JJAP.50.05EB01(Journal) (6692116-N) DOI: 10.7567/JJAP.50.05EB01(Journal) ========================================================== Created: 2023-02-01 12:52:02 ConfID: 6716692 CauseID: 1560041363 OtherID: 1363321177 JT: Japanese Journal of Applied Physics MD: Ibrahim,51,7s,707,2012,Detection of Boundaries of Carotid Arterial Wall by Analyzing Ultrasonic RF Signals DOI: 10.1143/JJAP.51.07GF07(Journal) (6716692-N) DOI: 10.7567/JJAP.51.07GF07(Journal) ========================================================== Created: 2023-01-05 12:05:33 ConfID: 6692117 CauseID: 1557137171 OtherID: 1363323789 JT: Japanese Journal of Applied Physics MD: Hsieh,50,5r,57202,2011,Deflections of Magnetic Actuator under Different Directions of External Magnetic Field DOI: 10.1143/JJAP.50.057202(Journal) (6692117-N) DOI: 10.7567/JJAP.50.057202(Journal) ========================================================== Created: 2023-02-01 12:52:02 ConfID: 6716693 CauseID: 1560041364 OtherID: 1363321218 JT: Japanese Journal of Applied Physics MD: Yamakoshi,51,7s,728,2012,Observation of Microhollows Produced by Bubble Cloud Cavitation DOI: 10.1143/JJAP.51.07GF28(Journal) (6716693-N) DOI: 10.7567/JJAP.51.07GF28(Journal) ========================================================== Created: 2023-01-05 12:05:30 ConfID: 6692114 CauseID: 1557137168 OtherID: 1363323734 JT: Japanese Journal of Applied Physics MD: Inagaki,50,4s,414,2011,Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence DOI: 10.1143/JJAP.50.04DP14(Journal) (6692114-N) DOI: 10.7567/JJAP.50.04DP14(Journal) ========================================================== Created: 2023-02-01 12:51:57 ConfID: 6716690 CauseID: 1560041357 OtherID: 1363321178 JT: Japanese Journal of Applied Physics MD: Osumi,51,7s,704,2012,Basic Study of Detecting Defects in Solid Materials Using High-Intensity Aerial Ultrasonic Waves DOI: 10.1143/JJAP.51.07GE04(Journal) (6716690-N) DOI: 10.7567/JJAP.51.07GE04(Journal) ========================================================== Created: 2023-01-05 12:05:31 ConfID: 6692115 CauseID: 1557137169 OtherID: 1363323704 JT: Japanese Journal of Applied Physics MD: Nakajima,50,4s,404,2011,Planar Multielectrode Array Coupled Complementary Metal Oxide Semiconductor Image Sensor for In vitro Electrophysiology DOI: 10.1143/JJAP.50.04DL04(Journal) (6692115-N) DOI: 10.7567/JJAP.50.04DL04(Journal) ========================================================== Created: 2023-02-01 12:52:01 ConfID: 6716691 CauseID: 1560041362 OtherID: 1363321203 JT: Japanese Journal of Applied Physics MD: Sato,51,7s,716,2012,Optimal Design of Damper Layer for Static Elastography DOI: 10.1143/JJAP.51.07GF16(Journal) (6716691-N) DOI: 10.7567/JJAP.51.07GF16(Journal) ========================================================== Created: 2023-01-05 12:05:29 ConfID: 6692112 CauseID: 1557137159 OtherID: 1363323759 JT: Japanese Journal of Applied Physics MD: Aya,50,5r,51703,2011,Nanosize-Induced Optically Isotropic Nematic Phase DOI: 10.1143/JJAP.50.051703(Journal) (6692112-N) DOI: 10.7567/JJAP.50.051703(Journal) ========================================================== Created: 2023-02-01 12:51:55 ConfID: 6716688 CauseID: 1560041353 OtherID: 1363321327 JT: Japanese Journal of Applied Physics MD: Kim,51,8s2,805,2012,A Simple Decoding Scheme for a Balanced 6/8 Modulation Code DOI: 10.1143/JJAP.51.08JB05(Journal) (6716688-N) DOI: 10.7567/JJAP.51.08JB05(Journal) ========================================================== Created: 2023-01-05 12:05:29 ConfID: 6692113 CauseID: 1557137160 OtherID: 1363323767 JT: Japanese Journal of Applied Physics MD: Abe,50,5r,51502,2011,Evaluation and Reliability Improvement Investigation of Electrical Characteristics of Ba0.9Sr0.1TiO3 Dielectric Films Prepared by Electrophoretic Deposition Method DOI: 10.1143/JJAP.50.051502(Journal) (6692113-N) DOI: 10.7567/JJAP.50.051502(Journal) ========================================================== Created: 2023-02-01 12:51:56 ConfID: 6716689 CauseID: 1560041354 OtherID: 1363321175 JT: Japanese Journal of Applied Physics MD: Yamamura,51,7s,701,2012,A Method for Improving Signal-to-Noise Ratio of Tissue Harmonic Imaging Based on Bayesian Inference Using Information of Fundamental Echoes DOI: 10.1143/JJAP.51.07GF01(Journal) (6716689-N) DOI: 10.7567/JJAP.51.07GF01(Journal) ========================================================== Created: 2023-01-05 12:05:43 ConfID: 6692126 CauseID: 1557137187 OtherID: 1363323787 JT: Japanese Journal of Applied Physics MD: Yamaguchi,50,5r,56101,2011,Spatial Distributions of Electron, CF, and CF2 Radical Densities and Gas Temperature in DC-Superposed Dual-Frequency Capacitively Coupled Plasma Etch Reactor Employing Cyclic-C4F8/N2/Ar Gas DOI: 10.1143/JJAP.50.056101(Journal) (6692126-N) DOI: 10.7567/JJAP.50.056101(Journal) ========================================================== Created: 2023-02-01 12:52:08 ConfID: 6716702 CauseID: 1560041385 OtherID: 1363321292 JT: Japanese Journal of Applied Physics MD: Shih,51,8s1,803,2012,Growth of Microcrystalline Diamond Films on Textured Si Substrates to Enhance the Electron Field Emission Properties DOI: 10.1143/JJAP.51.08HF03(Journal) (6716702-N) DOI: 10.7567/JJAP.51.08HF03(Journal) ========================================================== Created: 2023-01-05 12:05:43 ConfID: 6692127 CauseID: 1557137188 OtherID: 1363323717 JT: Japanese Journal of Applied Physics MD: Yang,50,4s,407,2011,High Field-Emission Stability of Offset-Thin-Film Transistor-Controlled Al-Doped Zinc Oxide Nanowires DOI: 10.1143/JJAP.50.04DN07(Journal) (6692127-N) DOI: 10.7567/JJAP.50.04DN07(Journal) ========================================================== Created: 2023-02-01 12:52:08 ConfID: 6716703 CauseID: 1560041386 OtherID: 1363321208 JT: Japanese Journal of Applied Physics MD: Kamimura,51,7s,708,2012,Tidal Effect in Small-Scale Sound Propagation Experiment DOI: 10.1143/JJAP.51.07GG08(Journal) (6716703-N) DOI: 10.7567/JJAP.51.07GG08(Journal) ========================================================== Created: 2023-01-05 12:05:40 ConfID: 6692124 CauseID: 1557137185 OtherID: 1363323800 JT: Japanese Journal of Applied Physics MD: Yokogawa,50,5s1,502,2011,Role of Impurity Segregation into Cu/Cap Interface and Grain Boundary in Resistivity and Electromigration of Cu/Low-k Interconnects DOI: 10.1143/JJAP.50.05EA02(Journal) (6692124-N) DOI: 10.7567/JJAP.50.05EA02(Journal) ========================================================== Created: 2023-02-01 12:52:07 ConfID: 6716700 CauseID: 1560041383 OtherID: 1363321189 JT: Japanese Journal of Applied Physics MD: Otsu,51,7s,724,2012,Therapeutic Array Transducer Element Using Coresonance between Hemispherical Piezoceramic Shell and Water Sphere: Effect of Load Masses of Support and Electric Contact DOI: 10.1143/JJAP.51.07GF24(Journal) (6716700-N) DOI: 10.7567/JJAP.51.07GF24(Journal) ========================================================== Created: 2023-01-05 12:05:42 ConfID: 6692125 CauseID: 1557137186 OtherID: 1363323775 JT: Japanese Journal of Applied Physics MD: Lee,50,5r,55805,2011,Optical Properties of Ultrathin Copper Thin Films Sandwiched between Nb-Doped TiO2 Films Studied with Spectroscopic Ellipsometry DOI: 10.1143/JJAP.50.055805(Journal) (6692125-N) DOI: 10.7567/JJAP.50.055805(Journal) ========================================================== Created: 2023-02-01 12:52:07 ConfID: 6716701 CauseID: 1560041384 OtherID: 1363321330 JT: Japanese Journal of Applied Physics MD: Mizuno,51,8s3,803,2012,Noncontact Atomic Force Microscopy Observation of Fe3O4(001) Surface DOI: 10.1143/JJAP.51.08KB03(Journal) (6716701-N) DOI: 10.7567/JJAP.51.08KB03(Journal) ========================================================== Created: 2023-01-05 12:05:39 ConfID: 6692122 CauseID: 1557137182 OtherID: 1363323765 JT: Japanese Journal of Applied Physics MD: Dev,50,5r,52501,2011,Ion-Irradiated Laterally Graded Ni/C Multilayers: A Combined X-ray Standing Wave and X-ray Reflectivity Analysis DOI: 10.1143/JJAP.50.052501(Journal) (6692122-N) DOI: 10.7567/JJAP.50.052501(Journal) ========================================================== Created: 2023-02-01 12:52:06 ConfID: 6716698 CauseID: 1560041381 OtherID: 1363321436 JT: Japanese Journal of Applied Physics MD: Sakai,51,9s1,902,2012,Cross-Section Analysis by Electron Backscatter Diffraction of Textured BaTiO3 Thick Films Prepared by Screen Printing DOI: 10.1143/JJAP.51.09LA02(Journal) (6716698-N) DOI: 10.7567/JJAP.51.09LA02(Journal) ========================================================== Created: 2023-01-05 12:05:39 ConfID: 6692123 CauseID: 1557137183 OtherID: 1363323823 JT: Japanese Journal of Applied Physics MD: Shirane,50,5s1,501,2011,A Study of Digitally Controllable Radio Frequency Micro Electro Mechanical Systems Inductor DOI: 10.1143/JJAP.50.05EE01(Journal) (6692123-N) DOI: 10.7567/JJAP.50.05EE01(Journal) ========================================================== Created: 2023-02-01 12:52:06 ConfID: 6716699 CauseID: 1560041382 OtherID: 1363321219 JT: Japanese Journal of Applied Physics MD: Lee,51,7s,701,2012,Geoacoustic Inversion of Mid-Frequency Bottom Loss Data in Shallow Water off the East Coast of Korea DOI: 10.1143/JJAP.51.07GG01(Journal) (6716699-N) DOI: 10.7567/JJAP.51.07GG01(Journal) ========================================================== Created: 2023-01-05 12:05:36 ConfID: 6692120 CauseID: 1557137178 OtherID: 1363323757 JT: Japanese Journal of Applied Physics MD: Arai,50,5r,53001,2011,Dynamics of Magnetostatically Coupled Vortices Observed by Time-Resolved Photoemission Electron Microscopy DOI: 10.1143/JJAP.50.053001(Journal) (6692120-N) DOI: 10.7567/JJAP.50.053001(Journal) ========================================================== Created: 2023-02-01 12:52:04 ConfID: 6716696 CauseID: 1560041367 OtherID: 1363321186 JT: Japanese Journal of Applied Physics MD: Nakagawa,51,7s,722,2012,Development of Bone-Conducted Ultrasonic Hearing Aid for the Profoundly Deaf: Assessments of the Modulation Type with Regard to Intelligibility and Sound Quality DOI: 10.1143/JJAP.51.07GF22(Journal) (6716696-N) DOI: 10.7567/JJAP.51.07GF22(Journal) ========================================================== Created: 2023-01-05 12:05:38 ConfID: 6692121 CauseID: 1557137181 OtherID: 1363323846 JT: Japanese Journal of Applied Physics MD: Rogacheva,50,5s2,501,2011,Mechanism of “Controlled Atomic Defects”: Extension to the Ternary Systems DOI: 10.1143/JJAP.50.05FB01(Journal) (6692121-N) DOI: 10.7567/JJAP.50.05FB01(Journal) ========================================================== Created: 2023-02-01 12:52:05 ConfID: 6716697 CauseID: 1560041378 OtherID: 1363321185 JT: Japanese Journal of Applied Physics MD: Hosokawa,51,7s,719,2012,Effect of Cortical Bone Layer on Fast and Slow Waves in Cancellous Bone: Investigations Using Stratified Models DOI: 10.1143/JJAP.51.07GF19(Journal) (6716697-N) DOI: 10.7567/JJAP.51.07GF19(Journal) ========================================================== Created: 2023-01-05 12:07:53 ConfID: 6692326 CauseID: 1557137442 OtherID: 1363323999 JT: Japanese Journal of Applied Physics MD: Tajima,50,6s,603,2011,Dynamics of Radical Cation of Poly(styrene acrylate)-Based Chemically Amplified Resist for Extreme Ultraviolet and Electron Beam Lithography DOI: 10.1143/JJAP.50.06GD03(Journal) (6692326-N) DOI: 10.7567/JJAP.50.06GD03(Journal) ========================================================== Created: 2023-01-05 12:07:55 ConfID: 6692327 CauseID: 1557137443 OtherID: 1363326138 JT: Japanese Journal of Applied Physics MD: Socha,50,6s,601,2011,Using FlexRay in Computational Lithography DOI: 10.1143/JJAP.50.06GB01(Journal) (6692327-N) DOI: 10.7567/JJAP.50.06GB01(Journal) ========================================================== Created: 2023-01-05 12:07:51 ConfID: 6692324 CauseID: 1557137440 OtherID: 1363324028 JT: Japanese Journal of Applied Physics MD: Kim,50,6s,607,2011,Effect of TiO2 Nanoparticle Modification on Ultraviolet Photodetection Properties of Al-Doped ZnO Nanowire Network DOI: 10.1143/JJAP.50.06GF07(Journal) (6692324-N) DOI: 10.7567/JJAP.50.06GF07(Journal) ========================================================== Created: 2023-01-05 12:07:52 ConfID: 6692325 CauseID: 1557137441 OtherID: 1363324071 JT: Japanese Journal of Applied Physics MD: Kashima,50,6s,609,2011,Determination of Exciton Binding Energy of GaInNAs Quantum Well Structures by Piezoelectric Photothermal Spectroscopy Compared with Photoreflectance Measurements DOI: 10.1143/JJAP.50.06GH09(Journal) (6692325-N) DOI: 10.7567/JJAP.50.06GH09(Journal) ========================================================== Created: 2023-01-05 12:07:50 ConfID: 6692322 CauseID: 1557137438 OtherID: 1363323897 JT: Japanese Journal of Applied Physics MD: Yang,50,6r,60205,2011,Extremely High Purcell Factor of Plasmonic Modes in Thin Nano-Metallic Cylinders DOI: 10.1143/JJAP.50.060205(Journal) (6692322-N) DOI: 10.7567/JJAP.50.060205(Journal) ========================================================== Created: 2023-01-05 12:07:51 ConfID: 6692323 CauseID: 1557137439 OtherID: 1363323977 JT: Japanese Journal of Applied Physics MD: Kwon,50,6r,66502,2011,Etching Characteristics and Mechanisms of Pb(Zr,Ti)O3, Pt, and SiO2 in an Inductively Coupled HBr/Cl2 Plasma DOI: 10.1143/JJAP.50.066502(Journal) (6692323-N) DOI: 10.7567/JJAP.50.066502(Journal) ========================================================== Created: 2023-01-05 12:07:54 ConfID: 6692320 CauseID: 1557137436 OtherID: 1363323228 JT: Japanese Journal of Applied Physics MD: Hayashi,50,1s2,105,2011,Three Dimensional Local Structure Analysis of ZnSnAs2:Mn by X-ray Fluorescence Holography DOI: 10.1143/JJAP.50.01BF05(Journal) (6692320-N) DOI: 10.7567/JJAP.50.01BF05(Journal) ========================================================== Created: 2023-01-05 12:07:54 ConfID: 6692321 CauseID: 1557137437 OtherID: 1363324014 JT: Japanese Journal of Applied Physics MD: Lee,50,6s,601,2011,Nonvolatile Resistive Memory Device Based on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) Thin Film for Transparent and Flexible Applications DOI: 10.1143/JJAP.50.06GF01(Journal) (6692321-N) DOI: 10.7567/JJAP.50.06GF01(Journal) ========================================================== Created: 2023-01-05 12:07:58 ConfID: 6692334 CauseID: 1557137451 OtherID: 1363323149 JT: Japanese Journal of Applied Physics MD: Suzuki,50,1s1,104,2011,Application of Carbon Nanotubes to Nylon Composite DOI: 10.1143/JJAP.50.01AF04(Journal) (6692334-N) DOI: 10.7567/JJAP.50.01AF04(Journal) ========================================================== Created: 2023-01-05 12:08:00 ConfID: 6692335 CauseID: 1557137453 OtherID: 1363323949 JT: Japanese Journal of Applied Physics MD: Matsunaga,50,6r,63004,2011,Design and Fabrication of a One-Transistor/One-Resistor Nonvolatile Binary Content-Addressable Memory Using Perpendicular Magnetic Tunnel Junction Devices with a Fine-Grained Power-Gating Scheme DOI: 10.1143/JJAP.50.063004(Journal) (6692335-N) DOI: 10.7567/JJAP.50.063004(Journal) ========================================================== Created: 2023-01-05 12:07:57 ConfID: 6692332 CauseID: 1557137449 OtherID: 1363323912 JT: Japanese Journal of Applied Physics MD: Ito,50,6r,60209,2011,Kinetics Study on Initial Growth Stage in Vapor Deposition of Organic Thin Film Using Quartz Crystal Microbalance DOI: 10.1143/JJAP.50.060209(Journal) (6692332-N) DOI: 10.7567/JJAP.50.060209(Journal) ========================================================== Created: 2023-01-05 12:07:57 ConfID: 6692333 CauseID: 1557137450 OtherID: 1363323117 JT: Japanese Journal of Applied Physics MD: Omurzak,50,1s1,109,2011,Synthesis of Wurtzite-Type ZnMgS by the Pulsed Plasma in Liquid DOI: 10.1143/JJAP.50.01AB09(Journal) (6692333-N) DOI: 10.7567/JJAP.50.01AB09(Journal) ========================================================== Created: 2023-01-05 12:07:56 ConfID: 6692330 CauseID: 1557137447 OtherID: 1363323100 JT: Japanese Journal of Applied Physics MD: Watanabe,50,1r,15701,2011,Microscopy and Electrical Properties of Ge/Ge Interfaces Bonded by Surface-Activated Wafer Bonding Technology DOI: 10.1143/JJAP.50.015701(Journal) (6692330-N) DOI: 10.7567/JJAP.50.015701(Journal) ========================================================== Created: 2023-01-05 12:07:56 ConfID: 6692331 CauseID: 1557137448 OtherID: 1363323937 JT: Japanese Journal of Applied Physics MD: Tomiyama,50,6r,65502,2011,Growth of Sc-Doped TiO2 Thin Film by RF Magnetron Sputtering DOI: 10.1143/JJAP.50.065502(Journal) (6692331-N) DOI: 10.7567/JJAP.50.065502(Journal) ========================================================== Created: 2023-01-05 12:07:58 ConfID: 6692328 CauseID: 1557137444 OtherID: 1363324043 JT: Japanese Journal of Applied Physics MD: Ohta,50,6s,603,2011,Multilayered Thin Metal Film Deposition by Sequential Operation of Nanosilicon Electron Emitter in Metal–Salt Solutions DOI: 10.1143/JJAP.50.06GG03(Journal) (6692328-N) DOI: 10.7567/JJAP.50.06GG03(Journal) ========================================================== Created: 2023-01-05 12:07:59 ConfID: 6692329 CauseID: 1557137446 OtherID: 1363323101 JT: Japanese Journal of Applied Physics MD: Zahn,50,1r,17101,2011,Morphology Effects on Space Charge Characteristics of Low Density Polyethylene DOI: 10.1143/JJAP.50.017101(Journal) (6692329-N) DOI: 10.7567/JJAP.50.017101(Journal) ========================================================== Created: 2023-01-05 12:08:02 ConfID: 6692342 CauseID: 1557137460 OtherID: 1363323946 JT: Japanese Journal of Applied Physics MD: Koo,50,6r,65001,2011,Strain-Dependent Characteristics of Triangular Silicon Nanowire-Based Field-Effect Transistors on Flexible Plastics DOI: 10.1143/JJAP.50.065001(Journal) (6692342-N) DOI: 10.7567/JJAP.50.065001(Journal) ========================================================== Created: 2023-01-05 12:08:03 ConfID: 6692343 CauseID: 1557137461 OtherID: 1363323973 JT: Japanese Journal of Applied Physics MD: Aono,50,6r,66601,2011,Novel Thermographic Method for Characterizing Transformation Temperatures of Thin-Film Shape Memory Alloys Aimed at Combinatorial Approach DOI: 10.1143/JJAP.50.066601(Journal) (6692343-N) DOI: 10.7567/JJAP.50.066601(Journal) ========================================================== Created: 2023-01-05 12:08:01 ConfID: 6692340 CauseID: 1557137458 OtherID: 1363323086 JT: Japanese Journal of Applied Physics MD: Lee,50,1r,11601,2011,Degradation of Poly(3-hexylthiophene):Methano-Fullerene [6,6]-Phenyl-C71 Butyric Acid Methyl Ester Bulk Heterojunction Solar Cells and Annealing Effect on the Degraded Devices DOI: 10.1143/JJAP.50.011601(Journal) (6692340-N) DOI: 10.7567/JJAP.50.011601(Journal) ========================================================== Created: 2023-01-05 12:08:01 ConfID: 6692341 CauseID: 1557137459 OtherID: 1363324013 JT: Japanese Journal of Applied Physics MD: Zou,50,6s,614,2011,Proposal of Graphene Bandgap Control by Hexagonal Network Formation DOI: 10.1143/JJAP.50.06GE14(Journal) (6692341-N) DOI: 10.7567/JJAP.50.06GE14(Journal) ========================================================== Created: 2023-01-05 12:08:04 ConfID: 6692338 CauseID: 1557137456 OtherID: 1363323124 JT: Japanese Journal of Applied Physics MD: Park,50,1s1,101,2011,Electrical Extractions of One Dimensional Doping Profile and Effective Mobility for Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.50.01AA01(Journal) (6692338-N) DOI: 10.7567/JJAP.50.01AA01(Journal) ========================================================== Created: 2023-01-05 12:08:00 ConfID: 6692339 CauseID: 1557137457 OtherID: 1363324042 JT: Japanese Journal of Applied Physics MD: Lee,50,6s,603,2011,Self-Aligned Formation of Nanoscale Phase Change Materials for Nonvolatile Memory Application DOI: 10.1143/JJAP.50.06GH03(Journal) (6692339-N) DOI: 10.7567/JJAP.50.06GH03(Journal) ========================================================== Created: 2023-01-05 12:08:03 ConfID: 6692336 CauseID: 1557137454 OtherID: 1363324058 JT: Japanese Journal of Applied Physics MD: Kim,50,6s,611,2011,Upconversion Emission in Er and Cr Co-Doped KNbO3 Phosphors DOI: 10.1143/JJAP.50.06GH11(Journal) (6692336-N) DOI: 10.7567/JJAP.50.06GH11(Journal) ========================================================== Created: 2023-01-05 12:08:04 ConfID: 6692337 CauseID: 1557137455 OtherID: 1363324020 JT: Japanese Journal of Applied Physics MD: Moon,50,6s,616,2011,Simplified Model of the Effect of Source/Drain Doping Gradient on Capacitance and Resistance in a Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor DOI: 10.1143/JJAP.50.06GF16(Journal) (6692337-N) DOI: 10.7567/JJAP.50.06GF16(Journal) ========================================================== Created: 2023-01-05 12:08:06 ConfID: 6692350 CauseID: 1557137469 OtherID: 1363323155 JT: Japanese Journal of Applied Physics MD: Ikeda,50,1s1,113,2011,Preparation of Arc Black and Carbon Nano Balloon by Arc Discharge and Their Application to a Fuel Cell DOI: 10.1143/JJAP.50.01AF13(Journal) (6692350-N) DOI: 10.7567/JJAP.50.01AF13(Journal) ========================================================== Created: 2023-01-05 12:08:06 ConfID: 6692351 CauseID: 1557137470 OtherID: 1363323052 JT: Japanese Journal of Applied Physics MD: Uemura,50,1r,10201,2011,Sub-40-fs Pulses from a Diode-Pumped Kerr-Lens Mode-Locked Yb-Doped Yttrium Aluminum Garnet Laser DOI: 10.1143/JJAP.50.010201(Journal) (6692351-N) DOI: 10.7567/JJAP.50.010201(Journal) ========================================================== Created: 2023-01-05 12:08:09 ConfID: 6692348 CauseID: 1557137467 OtherID: 1363323120 JT: Japanese Journal of Applied Physics MD: Ito,50,1s1,101,2011,Molecular Dynamics Simulation of Chemical Vapor Deposition of Amorphous Carbon: Dependence on H/C Ratio of Source Gas DOI: 10.1143/JJAP.50.01AB01(Journal) (6692348-N) DOI: 10.7567/JJAP.50.01AB01(Journal) ========================================================== Created: 2023-01-05 12:08:05 ConfID: 6692349 CauseID: 1557137468 OtherID: 1363323130 JT: Japanese Journal of Applied Physics MD: Guo,50,1s1,102,2011,Observation of Optical Fluorescence of GaN Thin Films in an Inductively-Coupled Plasma Containing High Energy Electrons DOI: 10.1143/JJAP.50.01AA02(Journal) (6692349-N) DOI: 10.7567/JJAP.50.01AA02(Journal) ========================================================== Created: 2023-01-05 12:08:09 ConfID: 6692346 CauseID: 1557137466 OtherID: 1363324086 JT: Japanese Journal of Applied Physics MD: Kudo,50,6s,612,2011,Optically Transparent and Refractive Index-Tunable ZrO2/Photopolymer Composites Designed for Ultraviolet Nanoimprinting DOI: 10.1143/JJAP.50.06GK12(Journal) (6692346-N) DOI: 10.7567/JJAP.50.06GK12(Journal) ========================================================== Created: 2023-01-05 12:33:36 ConfID: 6692347 CauseID: 1557140856 OtherID: 1363320415 JT: Japanese Journal of Applied Physics MD: Higuchi,51,2s,207,2012,Endurance Enhancement and High Speed Set/Reset of 50 nm Generation HfO2 Based Resistive Random Access Memory Cell by Intelligent Set/Reset Pulse Shape Optimization and Verify Scheme DOI: 10.1143/JJAP.51.02BD07(Journal) (6692347-N) DOI: 10.7567/JJAP.51.02BD07(Journal) ========================================================== Created: 2023-01-05 12:08:05 ConfID: 6692344 CauseID: 1557137464 OtherID: 1363323135 JT: Japanese Journal of Applied Physics MD: Koga,50,1s1,108,2011,Growth and Electrical Properties of 3C-SiC/Nanocrystalline Diamond Layered Films DOI: 10.1143/JJAP.50.01AB08(Journal) (6692344-N) DOI: 10.7567/JJAP.50.01AB08(Journal) ========================================================== Created: 2023-01-05 12:08:08 ConfID: 6692345 CauseID: 1557137465 OtherID: 1363323189 JT: Japanese Journal of Applied Physics MD: Wang,50,1s2,106,2011,Solution-Processed Small Molecular Organic Light-Emitting Devices with a Mixed Single Layer DOI: 10.1143/JJAP.50.01BC06(Journal) (6692345-N) DOI: 10.7567/JJAP.50.01BC06(Journal) ========================================================== Created: 2023-01-05 12:07:37 ConfID: 6692294 CauseID: 1557137407 OtherID: 1363323904 JT: Japanese Journal of Applied Physics MD: Tajima,50,6r,61001,2011,Impact of Gate and Passivation Structures on Current Collapse of AlGaN/GaN High-Electron-Mobility Transistors under Off-State-Bias Stress DOI: 10.1143/JJAP.50.061001(Journal) (6692294-N) DOI: 10.7567/JJAP.50.061001(Journal) ========================================================== Created: 2023-01-05 12:07:37 ConfID: 6692295 CauseID: 1557137408 OtherID: 1363323089 JT: Japanese Journal of Applied Physics MD: Choi,50,1r,15001,2011,Effects of Flow Transport of the Ar Carrier on the Synthesis of ZnO Nanowires by Chemical Vapor Deposition DOI: 10.1143/JJAP.50.015001(Journal) (6692295-N) DOI: 10.7567/JJAP.50.015001(Journal) ========================================================== Created: 2023-01-05 12:07:36 ConfID: 6692292 CauseID: 1557137405 OtherID: 1363326142 JT: Japanese Journal of Applied Physics MD: Isiizumi,50,6s,602,2011,Effect of Low-Energy Ga Ion Implantation on Selective Growth of Gallium Nitride Layer on Silicon Nitride Surfaces Using Metal Organic Chemical Vapor Deposition DOI: 10.1143/JJAP.50.06GC02(Journal) (6692292-N) DOI: 10.7567/JJAP.50.06GC02(Journal) ========================================================== Created: 2023-01-05 12:07:36 ConfID: 6692293 CauseID: 1557137406 OtherID: 1363323067 JT: Japanese Journal of Applied Physics MD: Takenaka,50,1r,10105,2011,Gas Phase Doping of Arsenic into (100), (110), and (111) Germanium Substrates Using a Metal–Organic Source DOI: 10.1143/JJAP.50.010105(Journal) (6692293-N) DOI: 10.7567/JJAP.50.010105(Journal) ========================================================== Created: 2023-01-05 12:07:34 ConfID: 6692290 CauseID: 1557137401 OtherID: 1363323125 JT: Japanese Journal of Applied Physics MD: Suzuki,50,1s1,103,2011,Plasma Diagnostics for NH3 Plasmas Using a Quartz Sensor at Various Pressures DOI: 10.1143/JJAP.50.01AA03(Journal) (6692290-N) DOI: 10.7567/JJAP.50.01AA03(Journal) ========================================================== Created: 2023-01-05 12:07:35 ConfID: 6692291 CauseID: 1557137404 OtherID: 1363323060 JT: Japanese Journal of Applied Physics MD: Zushi,50,1r,10102,2011,Molecular Dynamics Simulation on Longitudinal Optical Phonon Mode Decay and Heat Transport in a Silicon Nano-Structure Covered with Oxide Films DOI: 10.1143/JJAP.50.010102(Journal) (6692291-N) DOI: 10.7567/JJAP.50.010102(Journal) ========================================================== Created: 2023-01-05 12:07:33 ConfID: 6692288 CauseID: 1557137399 OtherID: 1363323878 JT: Japanese Journal of Applied Physics MD: Takizawa,50,5s2,501,2011,Effect of Rare Earth Element Codoping on the Mn Red Emission in Ca and Sr Thiogallates: Focusing on Its Mechanism through Electron Spin Resonance Study of Single Crystals DOI: 10.1143/JJAP.50.05FG01(Journal) (6692288-N) DOI: 10.7567/JJAP.50.05FG01(Journal) ========================================================== Created: 2023-01-05 12:07:34 ConfID: 6692289 CauseID: 1557137400 OtherID: 1363324048 JT: Japanese Journal of Applied Physics MD: Cha,50,6s,613,2011,Fabrication of Polymer Micropyramid/Nanolens Combined Structures Using Microstructured Nanodimpled Aluminum Stamp DOI: 10.1143/JJAP.50.06GG13(Journal) (6692289-N) DOI: 10.7567/JJAP.50.06GG13(Journal) ========================================================== Created: 2023-01-05 12:07:40 ConfID: 6692302 CauseID: 1557137415 OtherID: 1363323934 JT: Japanese Journal of Applied Physics MD: Rana,50,6r,61601,2011,Charge Transport Study of 2,2',7,7'-Tetrakis(N,N-di-4-methoxyphenyl amino)-9,9'-spirobifluorene Using Impedance Spectroscopy DOI: 10.1143/JJAP.50.061601(Journal) (6692302-N) DOI: 10.7567/JJAP.50.061601(Journal) ========================================================== Created: 2023-01-05 12:07:40 ConfID: 6692303 CauseID: 1557137416 OtherID: 1363323151 JT: Japanese Journal of Applied Physics MD: Ohachi,50,1s1,101,2011,Improvement of Plasma-Assisted Molecular Beam Epitaxial Growth of Group III Nitrides on Si Controlling Radio Frequency Discharge Modes and Irradiation of Nitrogen Flux DOI: 10.1143/JJAP.50.01AE01(Journal) (6692303-N) DOI: 10.7567/JJAP.50.01AE01(Journal) ========================================================== Created: 2023-01-05 12:07:44 ConfID: 6692300 CauseID: 1557137413 OtherID: 1363323110 JT: Japanese Journal of Applied Physics MD: Yahiro,50,1r,15103,2011,In-situ Crystal Structure Analysis of Cobalt Nanocompounds Synthesizing Graphite at High Temperatures DOI: 10.1143/JJAP.50.015103(Journal) (6692300-N) DOI: 10.7567/JJAP.50.015103(Journal) ========================================================== Created: 2023-01-05 12:07:44 ConfID: 6692301 CauseID: 1557137414 OtherID: 1363324010 JT: Japanese Journal of Applied Physics MD: Salina,50,6s,602,2011,Highly Conductive Vertically Aligned Carbon Nanotubes Grown on Mg0.3Zn0.7O Thin Film Template Using Thermal Chemical Vapour Deposition Method DOI: 10.1143/JJAP.50.06GE02(Journal) (6692301-N) DOI: 10.7567/JJAP.50.06GE02(Journal) ========================================================== Created: 2023-01-05 12:07:39 ConfID: 6692298 CauseID: 1557137411 OtherID: 1363323059 JT: Japanese Journal of Applied Physics MD: Saito,50,1r,10203,2011,Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001) Using Monomethylsilane DOI: 10.1143/JJAP.50.010203(Journal) (6692298-N) DOI: 10.7567/JJAP.50.010203(Journal) ========================================================== Created: 2023-01-05 12:07:39 ConfID: 6692299 CauseID: 1557137412 OtherID: 1363323929 JT: Japanese Journal of Applied Physics MD: Sakamoto,50,6r,62401,2011,Wavelength Modulation Spectroscopy Detection of N2O Using a Direct-Bonded Quasi-Phase-Matched LiNbO3-Ridge-Waveguide Mid-Infrared Laser DOI: 10.1143/JJAP.50.062401(Journal) (6692299-N) DOI: 10.7567/JJAP.50.062401(Journal) ========================================================== Created: 2023-01-05 12:07:38 ConfID: 6692296 CauseID: 1557137409 OtherID: 1363323930 JT: Japanese Journal of Applied Physics MD: Nishihara,50,6r,62503,2011,Rewritable Triple-Layer Phase-Change Optical Disk Providing 100 Gbyte Capacity DOI: 10.1143/JJAP.50.062503(Journal) (6692296-N) DOI: 10.7567/JJAP.50.062503(Journal) ========================================================== Created: 2023-01-05 12:07:38 ConfID: 6692297 CauseID: 1557137410 OtherID: 1363323943 JT: Japanese Journal of Applied Physics MD: Hanasaki,50,6r,65201,2011,Adsorption Density Control of Ferritin Molecules by Multistep Alternate Coating DOI: 10.1143/JJAP.50.065201(Journal) (6692297-N) DOI: 10.7567/JJAP.50.065201(Journal) ========================================================== Created: 2023-01-05 12:07:49 ConfID: 6692310 CauseID: 1557137426 OtherID: 1363323995 JT: Japanese Journal of Applied Physics MD: Okai,50,6s,601,2011,Charge Modeling for Metal Layer on Insulating Substrate DOI: 10.1143/JJAP.50.06GC01(Journal) (6692310-N) DOI: 10.7567/JJAP.50.06GC01(Journal) ========================================================== Created: 2023-01-05 12:07:49 ConfID: 6692311 CauseID: 1557137427 OtherID: 1363323378 JT: Japanese Journal of Applied Physics MD: Uesugi,50,3r,31005,2011,Electrical Characterization of GaN p–n Junctions Grown on Freestanding GaN Substrates by Metal–Organic Chemical Vapor Deposition DOI: 10.1143/JJAP.50.031005(Journal) (6692311-N) DOI: 10.7567/JJAP.50.031005(Journal) ========================================================== Created: 2023-01-05 12:07:45 ConfID: 6692308 CauseID: 1557137424 OtherID: 1363323055 JT: Japanese Journal of Applied Physics MD: Hamaya,50,1r,10101,2011,Source–Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications DOI: 10.1143/JJAP.50.010101(Journal) (6692308-N) DOI: 10.7567/JJAP.50.010101(Journal) ========================================================== Created: 2023-01-05 12:07:48 ConfID: 6692309 CauseID: 1557137425 OtherID: 1363323056 JT: Japanese Journal of Applied Physics MD: Baba,50,1r,10202,2011,Poly(N-isopropylacrylamide)-Based Thermoresponsive Behavior of Fluorescent Organic Nanocrystals DOI: 10.1143/JJAP.50.010202(Journal) (6692309-N) DOI: 10.7567/JJAP.50.010202(Journal) ========================================================== Created: 2023-01-05 12:07:43 ConfID: 6692306 CauseID: 1557137419 OtherID: 1363323980 JT: Japanese Journal of Applied Physics MD: Harada,50,6s,603,2011,Critical Dimension Measurement of an Extreme-Ultraviolet Mask Utilizing Coherent Extreme-Ultraviolet Scatterometry Microscope at NewSUBARU DOI: 10.1143/JJAP.50.06GB03(Journal) (6692306-N) DOI: 10.7567/JJAP.50.06GB03(Journal) ========================================================== Created: 2023-01-05 12:07:43 ConfID: 6692307 CauseID: 1557137420 OtherID: 1363323900 JT: Japanese Journal of Applied Physics MD: Suemori,50,6r,60202,2011,Estimation of Fermi Level Changes Caused by Changes in Ambient Conditions around Organic Semiconductors by Seebeck Effect Measurement DOI: 10.1143/JJAP.50.060202(Journal) (6692307-N) DOI: 10.7567/JJAP.50.060202(Journal) ========================================================== Created: 2023-01-05 12:07:41 ConfID: 6692304 CauseID: 1557137417 OtherID: 1363323902 JT: Japanese Journal of Applied Physics MD: Kurihara,50,6r,60210,2011,Fabrication of Epitaxial Interface between Transition Metal Cyanides DOI: 10.1143/JJAP.50.060210(Journal) (6692304-N) DOI: 10.7567/JJAP.50.060210(Journal) ========================================================== Created: 2023-01-05 12:07:41 ConfID: 6692305 CauseID: 1557137418 OtherID: 1363323914 JT: Japanese Journal of Applied Physics MD: Shimizu,50,6r,60208,2011,Analytical Investigation of an All-Optical T-Type Flip-Flop Using a Semiconductor Optical Amplifier Mach–Zehnder Interferometer with Push–Pull Configuration DOI: 10.1143/JJAP.50.060208(Journal) (6692305-N) DOI: 10.7567/JJAP.50.060208(Journal) ========================================================== Created: 2023-01-05 12:07:50 ConfID: 6692318 CauseID: 1557137434 OtherID: 1363324062 JT: Japanese Journal of Applied Physics MD: Suzuki,50,6s,604,2011,Fabrication Processes for Capacity-Equalized Mold with Fine Patterns DOI: 10.1143/JJAP.50.06GK04(Journal) (6692318-N) DOI: 10.7567/JJAP.50.06GK04(Journal) ========================================================== Created: 2023-01-05 12:07:53 ConfID: 6692319 CauseID: 1557137435 OtherID: 1363323143 JT: Japanese Journal of Applied Physics MD: Nozaki,50,1s1,103,2011,Parametric Study for Selective Growth of Single-Walled Carbon Nanotubes in Plasma Enhanced Chemical Vapor Deposition DOI: 10.1143/JJAP.50.01AF03(Journal) (6692319-N) DOI: 10.7567/JJAP.50.01AF03(Journal) ========================================================== Created: 2023-01-05 12:07:47 ConfID: 6692316 CauseID: 1557137431 OtherID: 1363323993 JT: Japanese Journal of Applied Physics MD: Orita,50,6r,69102,2011,Reply to “Comment on `Generalized Gradient Approximation +U Study for Metallization Mechanism of Niobium-Doped Anatase Titanium Dioxide' ” DOI: 10.1143/JJAP.50.069102(Journal) (6692316-N) DOI: 10.7567/JJAP.50.069102(Journal) ========================================================== Created: 2023-01-05 12:07:48 ConfID: 6692317 CauseID: 1557137432 OtherID: 1363323119 JT: Japanese Journal of Applied Physics MD: Geng,50,1s1,101,2011,Residual Strain Evaluation by Cross-Sectional Micro-Reflectance Spectroscopy of Freestanding GaN Grown by Hydride Vapor Phase Epitaxy DOI: 10.1143/JJAP.50.01AC01(Journal) (6692317-N) DOI: 10.7567/JJAP.50.01AC01(Journal) ========================================================== Created: 2023-01-05 12:07:46 ConfID: 6692314 CauseID: 1557137429 OtherID: 1363324032 JT: Japanese Journal of Applied Physics MD: Miura,50,6s,618,2011,Characterization of Low-Frequency Noise in GaAs Nanowire Field-Effect Transistors Controlled by Schottky Wrap Gate DOI: 10.1143/JJAP.50.06GF18(Journal) (6692314-N) DOI: 10.7567/JJAP.50.06GF18(Journal) ========================================================== Created: 2023-01-05 12:07:47 ConfID: 6692315 CauseID: 1557137430 OtherID: 1363323997 JT: Japanese Journal of Applied Physics MD: Yamaguchi,50,6s,610,2011,Transmission Grating Fabrication for Replicating Resist Patterns of 20 nm and Below DOI: 10.1143/JJAP.50.06GB10(Journal) (6692315-N) DOI: 10.7567/JJAP.50.06GB10(Journal) ========================================================== Created: 2023-01-05 12:32:45 ConfID: 6692312 CauseID: 1557140727 OtherID: 1363320416 JT: Japanese Journal of Applied Physics MD: Saito,51,2s,206,2012,Asynchronous Pulse Transmitter for Power Reduction in Inductive-Coupling Link DOI: 10.1143/JJAP.51.02BE06(Journal) (6692312-N) DOI: 10.7567/JJAP.51.02BE06(Journal) ========================================================== Created: 2023-01-05 12:07:45 ConfID: 6692313 CauseID: 1557137428 OtherID: 1363324055 JT: Japanese Journal of Applied Physics MD: Gen,50,6s,610,2011,A Colloidal Route to Detection of Organic Molecules Based on Surface-Enhanced Raman Spectroscopy Using Nanostructured Substrate Derived from Aerosols DOI: 10.1143/JJAP.50.06GG10(Journal) (6692313-N) DOI: 10.7567/JJAP.50.06GG10(Journal) ========================================================== Created: 2023-01-05 12:07:17 ConfID: 6692262 CauseID: 1557137371 OtherID: 1363323854 JT: Japanese Journal of Applied Physics MD: Alekperov,50,5s2,505,2011,γ-Radiation Stimulated Structural Transition of Monoclinic TlInS2 to Hexagonal Phase DOI: 10.1143/JJAP.50.05FD05(Journal) (6692262-N) DOI: 10.7567/JJAP.50.05FD05(Journal) ========================================================== Created: 2023-01-05 12:07:21 ConfID: 6692263 CauseID: 1557137374 OtherID: 1363323866 JT: Japanese Journal of Applied Physics MD: Mimura,50,5s2,503,2011,Temperature-Induced Valence Transition of EuPd2Si2 Studied by Hard X-ray Photoelectron Spectroscopy DOI: 10.1143/JJAP.50.05FD03(Journal) (6692263-N) DOI: 10.7567/JJAP.50.05FD03(Journal) ========================================================== Created: 2023-01-05 12:07:16 ConfID: 6692260 CauseID: 1557137368 OtherID: 1363323095 JT: Japanese Journal of Applied Physics MD: Kamimura,50,1r,15101,2011,Gate-Induced Cross-Over between Fabry–Perot Interference and Coulomb Blockade in a Single-Walled Carbon Nanotube Transistor with Double-Gate Structure DOI: 10.1143/JJAP.50.015101(Journal) (6692260-N) DOI: 10.7567/JJAP.50.015101(Journal) ========================================================== Created: 2023-01-05 12:07:16 ConfID: 6692261 CauseID: 1557137369 OtherID: 1363323835 JT: Japanese Journal of Applied Physics MD: Fujiwara,50,5s2,507,2011,Growth of Cu(In,Al)(S,Se)2 Thin Films by Selenization and Sulfurization for a Wide Bandgap Absorber DOI: 10.1143/JJAP.50.05FB07(Journal) (6692261-N) DOI: 10.7567/JJAP.50.05FB07(Journal) ========================================================== Created: 2023-01-05 12:07:18 ConfID: 6692258 CauseID: 1557137364 OtherID: 1363323963 JT: Japanese Journal of Applied Physics MD: Kaneda,50,6r,66503,2011,Electrical and Photoconductive Properties at 1.8 K of Germanium p+–i Junction Device Fabricated by Surface-Activated Wafer Bonding DOI: 10.1143/JJAP.50.066503(Journal) (6692258-N) DOI: 10.7567/JJAP.50.066503(Journal) ========================================================== Created: 2023-01-05 12:07:19 ConfID: 6692259 CauseID: 1557137365 OtherID: 1363323948 JT: Japanese Journal of Applied Physics MD: Tsuchiya,50,6r,64201,2011,Physical Mechanism of Threshold Voltage Modulation by Ge Channel Ion Implantation in the TiN/HfO2 Gate Stack Systems DOI: 10.1143/JJAP.50.064201(Journal) (6692259-N) DOI: 10.7567/JJAP.50.064201(Journal) ========================================================== Created: 2023-01-05 12:07:18 ConfID: 6692256 CauseID: 1557137363 OtherID: 1363324037 JT: Japanese Journal of Applied Physics MD: Mamat,50,6s,604,2011,Controllable Growth of Vertically Aligned Aluminum-Doped Zinc Oxide Nanorod Arrays by Sonicated Sol–Gel Immersion Method depending on Precursor Solution Volumes DOI: 10.1143/JJAP.50.06GH04(Journal) (6692256-N) DOI: 10.7567/JJAP.50.06GH04(Journal) ========================================================== Created: 2023-01-05 12:31:15 ConfID: 6692257 CauseID: 1557140463 OtherID: 1363320412 JT: Japanese Journal of Applied Physics MD: Lee,51,2s,205,2012,Practical Consideration of Both Endurance and Performance for Sub-90 nm Embedded Two Transistor Fowler–Nordheim Tunneling Flash Memory DOI: 10.1143/JJAP.51.02BD05(Journal) (6692257-N) DOI: 10.7567/JJAP.51.02BD05(Journal) ========================================================== Created: 2023-01-05 12:07:23 ConfID: 6692270 CauseID: 1557137381 OtherID: 1363323976 JT: Japanese Journal of Applied Physics MD: Hashimoto,50,6r,67201,2011,Evaluation of a Single-Crystal-Silicon Microelectromechanical Systems Resonator Utilizing a Narrow Gap Process DOI: 10.1143/JJAP.50.067201(Journal) (6692270-N) DOI: 10.7567/JJAP.50.067201(Journal) ========================================================== Created: 2023-01-05 12:07:24 ConfID: 6692271 CauseID: 1557137382 OtherID: 1363323091 JT: Japanese Journal of Applied Physics MD: Irikawa,50,1r,12301,2011,Effects of Annealing and Atomic Hydrogen Treatment on Aluminum Oxide Passivation Layers for Crystalline Silicon Solar Cells DOI: 10.1143/JJAP.50.012301(Journal) (6692271-N) DOI: 10.7567/JJAP.50.012301(Journal) ========================================================== Created: 2023-01-05 12:07:22 ConfID: 6692268 CauseID: 1557137379 OtherID: 1363324068 JT: Japanese Journal of Applied Physics MD: Mekaru,50,6s,605,2011,Effect of Dropping Hydrofluoroether in Thermal Nanoimprint on Polycarbonate DOI: 10.1143/JJAP.50.06GK05(Journal) (6692268-N) DOI: 10.7567/JJAP.50.06GK05(Journal) ========================================================== Created: 2023-01-05 12:07:23 ConfID: 6692269 CauseID: 1557137380 OtherID: 1363323941 JT: Japanese Journal of Applied Physics MD: Ohzone,50,6r,64102,2011,Green/Red Electroluminescence from Metal–Oxide–Semiconductor Devices Fabricated by Spin-Coating of Rare-Earth Organic Compounds on Silicon DOI: 10.1143/JJAP.50.064102(Journal) (6692269-N) DOI: 10.7567/JJAP.50.064102(Journal) ========================================================== Created: 2023-01-05 12:07:22 ConfID: 6692266 CauseID: 1557137378 OtherID: 1363323896 JT: Japanese Journal of Applied Physics MD: Miao,50,6r,61101,2011,Influence of Annealing on the Structure and 1.54 µm Photoluminescence of Er-Doped ZnO Thin Films Prepared by Sol–Gel Method DOI: 10.1143/JJAP.50.061101(Journal) (6692266-N) DOI: 10.7567/JJAP.50.061101(Journal) ========================================================== Created: 2023-01-05 12:31:59 ConfID: 6692267 CauseID: 1557140600 OtherID: 1363320405 JT: Japanese Journal of Applied Physics MD: Katayama,51,2s,202,2012,New Performance Indicators of Metal–Oxide–Semiconductor Field-Effect Transistors for High-Frequency Power-Conscious Design DOI: 10.1143/JJAP.51.02BC02(Journal) (6692267-N) DOI: 10.7567/JJAP.51.02BC02(Journal) ========================================================== Created: 2023-01-05 12:07:20 ConfID: 6692264 CauseID: 1557137376 OtherID: 1363323061 JT: Japanese Journal of Applied Physics MD: Mizuno,50,1r,10107,2011,Single Source Heterojunction Metal–Oxide–Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature DOI: 10.1143/JJAP.50.010107(Journal) (6692264-N) DOI: 10.7567/JJAP.50.010107(Journal) ========================================================== Created: 2023-01-05 12:07:21 ConfID: 6692265 CauseID: 1557137377 OtherID: 1363323111 JT: Japanese Journal of Applied Physics MD: Chen,50,1r,16601,2011,Comparison of Fringe Displacement in Moiré Deflection Tomography Diagnosis between Flame and Arc Plasma DOI: 10.1143/JJAP.50.016601(Journal) (6692265-N) DOI: 10.7567/JJAP.50.016601(Journal) ========================================================== Created: 2023-01-05 12:07:28 ConfID: 6692278 CauseID: 1557137389 OtherID: 1363323994 JT: Japanese Journal of Applied Physics MD: Matsuda,50,6s,602,2011,In-situ Contamination Thickness Measurement by Novel Resist Evaluation System at NewSUBARU DOI: 10.1143/JJAP.50.06GB02(Journal) (6692278-N) DOI: 10.7567/JJAP.50.06GB02(Journal) ========================================================== Created: 2023-01-05 12:07:29 ConfID: 6692279 CauseID: 1557137390 OtherID: 1363324059 JT: Japanese Journal of Applied Physics MD: Kim,50,6s,603,2011,Production of Double-Layered Metal Nanocups for Artificial Nanospace of Biomolecular Reaction DOI: 10.1143/JJAP.50.06GJ03(Journal) (6692279-N) DOI: 10.7567/JJAP.50.06GJ03(Journal) ========================================================== Created: 2023-01-05 12:07:27 ConfID: 6692276 CauseID: 1557137387 OtherID: 1363323887 JT: Japanese Journal of Applied Physics MD: Nakamura,50,5s2,501,2011,Phase Stability and Electronic Structure of In-Free Photovoltaic Materials Cu2IISnSe4 (II: Zn, Cd, Hg) DOI: 10.1143/JJAP.50.05FF01(Journal) (6692276-N) DOI: 10.7567/JJAP.50.05FF01(Journal) ========================================================== Created: 2023-01-05 12:07:27 ConfID: 6692277 CauseID: 1557137388 OtherID: 1363323970 JT: Japanese Journal of Applied Physics MD: Yagi,50,6r,65804,2011,Electrode Effects on Dielectric Relaxation in Oxide-Ion Conductor Ce0.7Yb0.3O2-δ Having a Fluorite-Type Structure DOI: 10.1143/JJAP.50.065804(Journal) (6692277-N) DOI: 10.7567/JJAP.50.065804(Journal) ========================================================== Created: 2023-01-05 12:07:25 ConfID: 6692274 CauseID: 1557137385 OtherID: 1363323150 JT: Japanese Journal of Applied Physics MD: Lee,50,1s1,106,2011,Characterization of the InGaN/GaN Multi-Quantum-Wells Light-Emitting Diode Grown on Patterned Sapphire Substrate with Wide Electroluminescence Spectrum DOI: 10.1143/JJAP.50.01AD06(Journal) (6692274-N) DOI: 10.7567/JJAP.50.01AD06(Journal) ========================================================== Created: 2023-01-05 12:07:26 ConfID: 6692275 CauseID: 1557137386 OtherID: 1363323990 JT: Japanese Journal of Applied Physics MD: Tawarayama,50,6s,608,2011,Application of Extreme Ultraviolet Lithography to Test Chip Fabrication DOI: 10.1143/JJAP.50.06GB08(Journal) (6692275-N) DOI: 10.7567/JJAP.50.06GB08(Journal) ========================================================== Created: 2023-01-05 12:07:24 ConfID: 6692272 CauseID: 1557137383 OtherID: 1363323956 JT: Japanese Journal of Applied Physics MD: Jo,50,6r,65501,2011,Crystal Quality of Naphtacene Single Crystals Obtained by Physical Vapor Transport Method DOI: 10.1143/JJAP.50.065501(Journal) (6692272-N) DOI: 10.7567/JJAP.50.065501(Journal) ========================================================== Created: 2023-01-05 12:07:25 ConfID: 6692273 CauseID: 1557137384 OtherID: 1363323921 JT: Japanese Journal of Applied Physics MD: Méndez-García,50,6r,62402,2011,Polarization and Excitation Dependence of Photoluminescence of InAs Quantum Wires and Dots Grown on GaAs(631) DOI: 10.1143/JJAP.50.062402(Journal) (6692273-N) DOI: 10.7567/JJAP.50.062402(Journal) ========================================================== Created: 2023-01-05 12:07:32 ConfID: 6692286 CauseID: 1557137397 OtherID: 1363323947 JT: Japanese Journal of Applied Physics MD: Yamauchi,50,6r,65702,2011,D Abstraction by H at a Ru(001) Surface Covered with D2O Molecules DOI: 10.1143/JJAP.50.065702(Journal) (6692286-N) DOI: 10.7567/JJAP.50.065702(Journal) ========================================================== Created: 2023-01-05 12:07:33 ConfID: 6692287 CauseID: 1557137398 OtherID: 1363326136 JT: Japanese Journal of Applied Physics MD: Morgan,50,6r,69101,2011,Comment on “Generalized Gradient Approximation +U Study for Metallization Mechanism of Niobium-Doped Anatase Titanium Dioxide” DOI: 10.1143/JJAP.50.069101(Journal) (6692287-N) DOI: 10.7567/JJAP.50.069101(Journal) ========================================================== Created: 2023-01-05 12:07:31 ConfID: 6692284 CauseID: 1557137395 OtherID: 1363323097 JT: Japanese Journal of Applied Physics MD: Nishi,50,1r,15802,2011,Correlation between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory DOI: 10.1143/JJAP.50.015802(Journal) (6692284-N) DOI: 10.7567/JJAP.50.015802(Journal) ========================================================== Created: 2023-01-05 12:07:32 ConfID: 6692285 CauseID: 1557137396 OtherID: 1363323107 JT: Japanese Journal of Applied Physics MD: Zhang,50,1r,15803,2011,Super Smooth Modification of Al2O3 Ceramic Substrate by High Temperature Glaze of CaO–Al2O3–SiO2 System DOI: 10.1143/JJAP.50.015803(Journal) (6692285-N) DOI: 10.7567/JJAP.50.015803(Journal) ========================================================== Created: 2023-01-05 12:32:21 ConfID: 6692282 CauseID: 1557140663 OtherID: 1363320423 JT: Japanese Journal of Applied Physics MD: Ariyoshi,51,2s,201,2012,Improved Near-Infrared Sensitivity with a Side-Illuminated Photosensor DOI: 10.1143/JJAP.51.02BE01(Journal) (6692282-N) DOI: 10.7567/JJAP.51.02BE01(Journal) ========================================================== Created: 2023-01-05 12:07:31 ConfID: 6692283 CauseID: 1557137394 OtherID: 1363323054 JT: Japanese Journal of Applied Physics MD: Senami,50,1r,10103,2011,Local Transport Property of GaN Cluster as a Model of Nanowire DOI: 10.1143/JJAP.50.010103(Journal) (6692283-N) DOI: 10.7567/JJAP.50.010103(Journal) ========================================================== Created: 2023-01-05 12:07:29 ConfID: 6692280 CauseID: 1557137391 OtherID: 1363323066 JT: Japanese Journal of Applied Physics MD: Nakakita,50,1r,10109,2011,Interface-Controlled Self-Align Source/Drain Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated Using Thermally Oxidized GeO2 Interfacial Layers DOI: 10.1143/JJAP.50.010109(Journal) (6692280-N) DOI: 10.7567/JJAP.50.010109(Journal) ========================================================== Created: 2023-01-05 12:07:30 ConfID: 6692281 CauseID: 1557137393 OtherID: 1363323998 JT: Japanese Journal of Applied Physics MD: Nakamura,50,6s,605,2011,First-Principles Simulation on Piezoresistivity in Alpha and Beta Silicon Carbide Nanosheets DOI: 10.1143/JJAP.50.06GE05(Journal) (6692281-N) DOI: 10.7567/JJAP.50.06GE05(Journal) ========================================================== Created: 2023-01-05 12:06:58 ConfID: 6692230 CauseID: 1557137335 OtherID: 1363323822 JT: Japanese Journal of Applied Physics MD: Amanokura,50,5s1,504,2011,Development of High-Speed Copper Chemical Mechanical Polishing Slurry for Through Silicon Via Application Based on Friction Analysis Using Atomic Force Microscope DOI: 10.1143/JJAP.50.05ED04(Journal) (6692230-N) DOI: 10.7567/JJAP.50.05ED04(Journal) ========================================================== Created: 2023-01-05 12:07:00 ConfID: 6692231 CauseID: 1557137336 OtherID: 1363323952 JT: Japanese Journal of Applied Physics MD: Mott,50,6r,65004,2011,A Study on the Plasmonic Properties of Silver Core Gold Shell Nanoparticles: Optical Assessment of the Particle Structure DOI: 10.1143/JJAP.50.065004(Journal) (6692231-N) DOI: 10.7567/JJAP.50.065004(Journal) ========================================================== Created: 2023-01-05 12:06:57 ConfID: 6692228 CauseID: 1557137333 OtherID: 1363323920 JT: Japanese Journal of Applied Physics MD: Peng,50,6r,62601,2011,Stability Improvement of a Twisted-Vertical Aligned Nematic Liquid Crystal Cell DOI: 10.1143/JJAP.50.062601(Journal) (6692228-N) DOI: 10.7567/JJAP.50.062601(Journal) ========================================================== Created: 2023-01-05 12:06:57 ConfID: 6692229 CauseID: 1557137334 OtherID: 1363323962 JT: Japanese Journal of Applied Physics MD: Chang,50,6r,66302,2011,Results of Beam Extraction Performance for the KSTAR Neutral Beam Injector DOI: 10.1143/JJAP.50.066302(Journal) (6692229-N) DOI: 10.7567/JJAP.50.066302(Journal) ========================================================== Created: 2023-01-05 12:06:56 ConfID: 6692226 CauseID: 1557137331 OtherID: 1363323933 JT: Japanese Journal of Applied Physics MD: Higashi,50,6r,61502,2011,Liquid Phase Deposition of Carbon Nitride Films for Application as Low-k Insulating Materials DOI: 10.1143/JJAP.50.061502(Journal) (6692226-N) DOI: 10.7567/JJAP.50.061502(Journal) ========================================================== Created: 2023-01-05 12:06:56 ConfID: 6692227 CauseID: 1557137332 OtherID: 1363324030 JT: Japanese Journal of Applied Physics MD: Ha,50,6s,617,2011,High-Voltage Schottky Barrier Diode on Silicon Substrate DOI: 10.1143/JJAP.50.06GF17(Journal) (6692227-N) DOI: 10.7567/JJAP.50.06GF17(Journal) ========================================================== Created: 2023-01-05 12:06:59 ConfID: 6692224 CauseID: 1557137329 OtherID: 1363323932 JT: Japanese Journal of Applied Physics MD: Butou,50,6r,62103,2011,Passivation Effect of Diamond-Like Carbon Films for Organic Light-Emitting Diodes DOI: 10.1143/JJAP.50.062103(Journal) (6692224-N) DOI: 10.7567/JJAP.50.062103(Journal) ========================================================== Created: 2023-01-05 12:06:55 ConfID: 6692225 CauseID: 1557137330 OtherID: 1363323927 JT: Japanese Journal of Applied Physics MD: Park,50,6r,61201,2011,Thermomechanical Analysis on the Phase Stability of Nitrogen-Doped Amorphous Ge2Sb2Te5 Films DOI: 10.1143/JJAP.50.061201(Journal) (6692225-N) DOI: 10.7567/JJAP.50.061201(Journal) ========================================================== Created: 2023-01-05 12:07:03 ConfID: 6692238 CauseID: 1557137344 OtherID: 1363323965 JT: Japanese Journal of Applied Physics MD: Chen,50,6r,66501,2011,Laser Direct Patterning of Organic Dielectric Passivation Layer for Fabricating Amorphous Silicon Thin-Film Transistors DOI: 10.1143/JJAP.50.066501(Journal) (6692238-N) DOI: 10.7567/JJAP.50.066501(Journal) ========================================================== Created: 2023-01-05 12:07:08 ConfID: 6692239 CauseID: 1557137346 OtherID: 1363323926 JT: Japanese Journal of Applied Physics MD: Iijima,50,6r,61503,2011,Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-k/Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.50.061503(Journal) (6692239-N) DOI: 10.7567/JJAP.50.061503(Journal) ========================================================== Created: 2023-01-05 12:07:02 ConfID: 6692236 CauseID: 1557137342 OtherID: 1363323879 JT: Japanese Journal of Applied Physics MD: Nakhmedov,50,5s2,503,2011,Spin–Orbit Interactions in a Quasi-Two-Dimensional Electron Gas with Finite Thickness DOI: 10.1143/JJAP.50.05FE03(Journal) (6692236-N) DOI: 10.7567/JJAP.50.05FE03(Journal) ========================================================== Created: 2023-01-05 12:07:02 ConfID: 6692237 CauseID: 1557137343 OtherID: 1363324004 JT: Japanese Journal of Applied Physics MD: Nam,50,6s,602,2011,Development of Hybrid Photovoltaic Cells by Incorporating CuInS2 Quantum Dots into Organic Photoactive Layers DOI: 10.1143/JJAP.50.06GF02(Journal) (6692237-N) DOI: 10.7567/JJAP.50.06GF02(Journal) ========================================================== Created: 2023-01-05 12:07:04 ConfID: 6692234 CauseID: 1557137339 OtherID: 1363323971 JT: Japanese Journal of Applied Physics MD: Zhu,50,6r,65806,2011,Annealing Effects on Conductivity and Microwave Dielectric Loss of MgTiO3 Ceramics DOI: 10.1143/JJAP.50.065806(Journal) (6692234-N) DOI: 10.7567/JJAP.50.065806(Journal) ========================================================== Created: 2023-01-05 12:07:01 ConfID: 6692235 CauseID: 1557137341 OtherID: 1363323938 JT: Japanese Journal of Applied Physics MD: Hong,50,6r,65203,2011,On Optical Properties of CdTe/ZnTe Quantum Rings DOI: 10.1143/JJAP.50.065203(Journal) (6692235-N) DOI: 10.7567/JJAP.50.065203(Journal) ========================================================== Created: 2023-01-05 12:29:53 ConfID: 6692232 CauseID: 1557140204 OtherID: 1363320177 JT: Japanese Journal of Applied Physics MD: Watabe,51,1r,18002,2012,Signal with Flat Phase Noise Using a Carrier and the Power Spectral Density of White Noise for Phase Noise Standards DOI: 10.1143/JJAP.51.018002(Journal) (6692232-N) DOI: 10.7567/JJAP.51.018002(Journal) ========================================================== Created: 2023-01-05 12:07:04 ConfID: 6692233 CauseID: 1557137338 OtherID: 1363323923 JT: Japanese Journal of Applied Physics MD: Abe,50,6r,63002,2011,Selective Product of Magnetite through Addition of Small Amount of Metal Element DOI: 10.1143/JJAP.50.063002(Journal) (6692233-N) DOI: 10.7567/JJAP.50.063002(Journal) ========================================================== Created: 2023-01-05 12:07:08 ConfID: 6692246 CauseID: 1557137354 OtherID: 1363323905 JT: Japanese Journal of Applied Physics MD: Gao,50,6r,60206,2011,Uncooled InAsSb Photoconductors with Long Wavelength DOI: 10.1143/JJAP.50.060206(Journal) (6692246-N) DOI: 10.7567/JJAP.50.060206(Journal) ========================================================== Created: 2023-01-05 12:30:26 ConfID: 6692247 CauseID: 1557140318 OtherID: 1363320404 JT: Japanese Journal of Applied Physics MD: Ota,51,2s,208,2012,Enhanced Degradation by Negative Bias Temperature Stress in Si Nanowire Transistor DOI: 10.1143/JJAP.51.02BC08(Journal) (6692247-N) DOI: 10.7567/JJAP.51.02BC08(Journal) ========================================================== Created: 2023-01-05 12:07:06 ConfID: 6692244 CauseID: 1557137351 OtherID: 1363323967 JT: Japanese Journal of Applied Physics MD: Tamura,50,6r,66301,2011,Properties of a Rubidium Isotope Ion Beam Extracted from a Laser Ion Source DOI: 10.1143/JJAP.50.066301(Journal) (6692244-N) DOI: 10.7567/JJAP.50.066301(Journal) ========================================================== Created: 2023-01-05 12:07:07 ConfID: 6692245 CauseID: 1557137353 OtherID: 1363323955 JT: Japanese Journal of Applied Physics MD: Shindo,50,6r,65701,2011,Ce-Induced Reconstruction of Si(001) Surface Structures DOI: 10.1143/JJAP.50.065701(Journal) (6692245-N) DOI: 10.7567/JJAP.50.065701(Journal) ========================================================== Created: 2023-01-05 12:07:05 ConfID: 6692242 CauseID: 1557137349 OtherID: 1363323945 JT: Japanese Journal of Applied Physics MD: Wang,50,6r,65003,2011,Synthesis of Cu2ZnSnS4 Nanocrystallines by a Hydrothermal Route DOI: 10.1143/JJAP.50.065003(Journal) (6692242-N) DOI: 10.7567/JJAP.50.065003(Journal) ========================================================== Created: 2023-01-05 12:07:06 ConfID: 6692243 CauseID: 1557137350 OtherID: 1363323840 JT: Japanese Journal of Applied Physics MD: Zeiringer,50,5s2,501,2011,Phase Equilibria, Crystal Chemistry, and Physical Properties of Ag–Ba–Si Clathrates DOI: 10.1143/JJAP.50.05FA01(Journal) (6692243-N) DOI: 10.7567/JJAP.50.05FA01(Journal) ========================================================== Created: 2023-01-05 12:07:09 ConfID: 6692240 CauseID: 1557137347 OtherID: 1363323959 JT: Japanese Journal of Applied Physics MD: Okimura,50,6r,65803,2011,Epitaxial Growth of V2O3 Thin Films on c-Plane Al2O3 in Reactive Sputtering and Its Transformation to VO2 Films by Post Annealing DOI: 10.1143/JJAP.50.065803(Journal) (6692240-N) DOI: 10.7567/JJAP.50.065803(Journal) ========================================================== Created: 2023-01-05 12:07:09 ConfID: 6692241 CauseID: 1557137348 OtherID: 1363323964 JT: Japanese Journal of Applied Physics MD: Kasai,50,6r,67301,2011,Negative Refraction and Energy-Transmission Efficiency of Acoustic Waves in Two-Dimensional Phononic Crystal: Numerical and Experimental Study DOI: 10.1143/JJAP.50.067301(Journal) (6692241-N) DOI: 10.7567/JJAP.50.067301(Journal) ========================================================== Created: 2023-01-05 12:07:13 ConfID: 6692254 CauseID: 1557137361 OtherID: 1363324009 JT: Japanese Journal of Applied Physics MD: Ueki,50,6s,610,2011,Enormous Shrinkage of Carbon Nanotubes under Low-Energy Electron Beam Irradiation with Uniaxial Tensile Stress DOI: 10.1143/JJAP.50.06GE10(Journal) (6692254-N) DOI: 10.7567/JJAP.50.06GE10(Journal) ========================================================== Created: 2023-01-05 12:07:13 ConfID: 6692255 CauseID: 1557137362 OtherID: 1363326143 JT: Japanese Journal of Applied Physics MD: Mayya,50,6s,601,2011,A New Method for Line Width Roughness Mitigation DOI: 10.1143/JJAP.50.06GD01(Journal) (6692255-N) DOI: 10.7567/JJAP.50.06GD01(Journal) ========================================================== Created: 2023-01-05 12:31:06 ConfID: 6692252 CauseID: 1557140439 OtherID: 1363320418 JT: Japanese Journal of Applied Physics MD: Seo,51,2s,204,2012,Disturb-Free Three-Dimensional Vertical Floating Gate NAND with Separated-Sidewall Control Gate DOI: 10.1143/JJAP.51.02BD04(Journal) (6692252-N) DOI: 10.7567/JJAP.51.02BD04(Journal) ========================================================== Created: 2023-01-05 12:07:12 ConfID: 6692253 CauseID: 1557137360 OtherID: 1363323975 JT: Japanese Journal of Applied Physics MD: Toh,50,6r,68001,2011,Optical Absorption Properties of BaSi2 Epitaxial Films Grown on a Transparent Silicon-on-Insulator Substrate Using Molecular Beam Epitaxy DOI: 10.1143/JJAP.50.068001(Journal) (6692253-N) DOI: 10.7567/JJAP.50.068001(Journal) ========================================================== Created: 2023-01-05 12:07:11 ConfID: 6692250 CauseID: 1557137358 OtherID: 1363323961 JT: Japanese Journal of Applied Physics MD: Hara,50,6r,65807,2011,Effect of Oxygen Adsorption on Polaron Conduction in Nanometer-Scale Nb5+-, Fe3+-, and Cr3+-Doped SrTiO3 Thin Films DOI: 10.1143/JJAP.50.065807(Journal) (6692250-N) DOI: 10.7567/JJAP.50.065807(Journal) ========================================================== Created: 2023-01-05 12:07:11 ConfID: 6692251 CauseID: 1557137359 OtherID: 1363323799 JT: Japanese Journal of Applied Physics MD: Nagano,50,5s1,508,2011,Effectiveness of Dimethyl Carbonate and Dipivaloyl Methane Chemicals for Internal Repair of Plasma-Damaged Low-k Films DOI: 10.1143/JJAP.50.05EB08(Journal) (6692251-N) DOI: 10.7567/JJAP.50.05EB08(Journal) ========================================================== Created: 2023-01-05 12:07:14 ConfID: 6692248 CauseID: 1557137356 OtherID: 1363326144 JT: Japanese Journal of Applied Physics MD: Hur,50,6s,611,2011,New Design Based Metrology for Fast Detection of Crucial Lithographic Defects DOI: 10.1143/JJAP.50.06GB11(Journal) (6692248-N) DOI: 10.7567/JJAP.50.06GB11(Journal) ========================================================== Created: 2023-01-05 12:07:10 ConfID: 6692249 CauseID: 1557137357 OtherID: 1363323870 JT: Japanese Journal of Applied Physics MD: Hosokawa,50,5s2,506,2011,Three-Dimensional Atomic Images of TlInSe2 Thermoelectric Material Obtained by X-ray Fluorescence Holography DOI: 10.1143/JJAP.50.05FC06(Journal) (6692249-N) DOI: 10.7567/JJAP.50.05FC06(Journal) ========================================================== Created: 2023-01-05 12:09:00 ConfID: 6692454 CauseID: 1557137580 OtherID: 1363323158 JT: Japanese Journal of Applied Physics MD: Kajita,50,1s1,102,2011,Formation of Metallic Nanostructure by Helium Plasma Irradiation DOI: 10.1143/JJAP.50.01AH02(Journal) (6692454-N) DOI: 10.7567/JJAP.50.01AH02(Journal) ========================================================== Created: 2023-01-05 12:09:01 ConfID: 6692455 CauseID: 1557137581 OtherID: 1363323209 JT: Japanese Journal of Applied Physics MD: Aoba,50,1s2,115,2011,High-Pressure Synthesis of CuBa2Ca3Cu4O10+δ Superconductor from Precursors Prepared by a Polymerized Complex Method DOI: 10.1143/JJAP.50.01BE15(Journal) (6692455-N) DOI: 10.7567/JJAP.50.01BE15(Journal) ========================================================== Created: 2023-01-05 12:08:59 ConfID: 6692452 CauseID: 1557137578 OtherID: 1363324182 JT: Japanese Journal of Applied Physics MD: Tokita,50,7r,71701,2011,High-Density Poly(methyl methacrylate) Brushes as Anchoring Surfaces of Nematic Liquid Crystals DOI: 10.1143/JJAP.50.071701(Journal) (6692452-N) DOI: 10.7567/JJAP.50.071701(Journal) ========================================================== Created: 2023-01-05 12:09:00 ConfID: 6692453 CauseID: 1557137579 OtherID: 1363323342 JT: Japanese Journal of Applied Physics MD: Konagai,50,3r,30001,2011,Present Status and Future Prospects of Silicon Thin-Film Solar Cells DOI: 10.1143/JJAP.50.030001(Journal) (6692453-N) DOI: 10.7567/JJAP.50.030001(Journal) ========================================================== Created: 2023-01-05 12:08:58 ConfID: 6692450 CauseID: 1557137576 OtherID: 1363323136 JT: Japanese Journal of Applied Physics MD: Ohkubo,50,1r,18002,2011,Wet Etching of TiO2-Based Precursor Amorphous Films for Transparent Electrodes DOI: 10.1143/JJAP.50.018002(Journal) (6692450-N) DOI: 10.7567/JJAP.50.018002(Journal) ========================================================== Created: 2023-01-05 12:08:59 ConfID: 6692451 CauseID: 1557137577 OtherID: 1363323221 JT: Japanese Journal of Applied Physics MD: Sato,50,1s2,116,2011,Study of Liquid Crystal Alignment Formed Using Slit Coater DOI: 10.1143/JJAP.50.01BC16(Journal) (6692451-N) DOI: 10.7567/JJAP.50.01BC16(Journal) ========================================================== Created: 2023-01-05 12:08:57 ConfID: 6692448 CauseID: 1557137574 OtherID: 1363323204 JT: Japanese Journal of Applied Physics MD: Chae,50,1s2,105,2011,Ferromagnetism Induced by Vacancies in Bulk and the (1010) Surfaces of ZnO: Density Functional Theory Calculations DOI: 10.1143/JJAP.50.01BE05(Journal) (6692448-N) DOI: 10.7567/JJAP.50.01BE05(Journal) ========================================================== Created: 2023-01-05 12:08:58 ConfID: 6692449 CauseID: 1557137575 OtherID: 1363326135 JT: Japanese Journal of Applied Physics MD: Endo,50,6s,606,2011,Low Energy Xe+ Ion Beam Machining of the Ultralow Expansion Glass Substrates for Aspherical Extreme Ultraviolet Lithography Projection Optics DOI: 10.1143/JJAP.50.06GB06(Journal) (6692449-N) DOI: 10.7567/JJAP.50.06GB06(Journal) ========================================================== Created: 2023-01-05 12:09:05 ConfID: 6692462 CauseID: 1557137589 OtherID: 1363324156 JT: Japanese Journal of Applied Physics MD: Park,50,7r,70210,2011,Influence of Ion Bombardment onto Phosphor Layer on Temporal Image Sticking in Alternating-Current Plasma Display Panel DOI: 10.1143/JJAP.50.070210(Journal) (6692462-N) DOI: 10.7567/JJAP.50.070210(Journal) ========================================================== Created: 2023-01-05 12:09:05 ConfID: 6692463 CauseID: 1557137591 OtherID: 1363323207 JT: Japanese Journal of Applied Physics MD: Kinoshita,50,1s2,101,2011,Structural and Magnetic Properties of Fe and Au Ion-Implanted Al2O3 Single Crystals DOI: 10.1143/JJAP.50.01BE01(Journal) (6692463-N) DOI: 10.7567/JJAP.50.01BE01(Journal) ========================================================== Created: 2023-01-05 12:09:04 ConfID: 6692460 CauseID: 1557137586 OtherID: 1363323057 JT: Japanese Journal of Applied Physics MD: Tomita,50,1r,10111,2011,Evaluation of Strained-Silicon by Electron Backscattering Pattern Measurement: Comparison Study with UV-Raman Measurement and Edge Force Model Calculation DOI: 10.1143/JJAP.50.010111(Journal) (6692460-N) DOI: 10.7567/JJAP.50.010111(Journal) ========================================================== Created: 2023-01-05 12:09:04 ConfID: 6692461 CauseID: 1557137587 OtherID: 1363324016 JT: Japanese Journal of Applied Physics MD: Hakamata,50,6s,603,2011,Robust Noise Characteristics in Carbon Nanotube Transistors Based on Stochastic Resonance and Their Summing Networks DOI: 10.1143/JJAP.50.06GE03(Journal) (6692461-N) DOI: 10.7567/JJAP.50.06GE03(Journal) ========================================================== Created: 2023-01-05 12:09:03 ConfID: 6692458 CauseID: 1557137584 OtherID: 1363323184 JT: Japanese Journal of Applied Physics MD: Choi,50,1s2,107,2011,Highly Efficient Green Phosphorescent Organic Light-Emitting Diodes with High Electron Mobility DOI: 10.1143/JJAP.50.01BC07(Journal) (6692458-N) DOI: 10.7567/JJAP.50.01BC07(Journal) ========================================================== Created: 2023-01-05 12:09:03 ConfID: 6692459 CauseID: 1557137585 OtherID: 1363323173 JT: Japanese Journal of Applied Physics MD: Inomata,50,1s1,103,2011,Visible Light-Induced Catalytic Oxidation Using Zeolite Encapsulating Two Distinct Metal Complexes DOI: 10.1143/JJAP.50.01AJ03(Journal) (6692459-N) DOI: 10.7567/JJAP.50.01AJ03(Journal) ========================================================== Created: 2021-12-14 11:42:20 ConfID: 6397551 CauseID: 1515278076 OtherID: 1363324563 JT: Japanese Journal of Applied Physics MD: Itoh,50,9r,99201,2011,Publisher's Note: “Analysis of Size Dependence of Quality Factor of Quartz-Crystal Tuning Fork” DOI: 10.1143/JJAP.50.099201(Journal) (6397551-N) DOI: 10.7567/JJAP.50.099201(Journal) ========================================================== Created: 2023-01-05 12:09:02 ConfID: 6692456 CauseID: 1557137582 OtherID: 1363324089 JT: Japanese Journal of Applied Physics MD: Min,50,6s,610,2011,Tunable Microchip Design for Solvent-Based Bonding of Poly(methyl methacrylate) Substrates by Capillary Force Inequality DOI: 10.1143/JJAP.50.06GL10(Journal) (6692456-N) DOI: 10.7567/JJAP.50.06GL10(Journal) ========================================================== Created: 2021-12-14 11:42:19 ConfID: 6397550 CauseID: 1515278070 OtherID: 1363324400 JT: Japanese Journal of Applied Physics MD: Wakamatsu,50,8r,89201,2011,Erratum: “Transparent Cell for Protein Crystallization under Low Applied Voltage” DOI: 10.1143/JJAP.50.089201(Journal) (6397550-N) DOI: 10.7567/JJAP.50.089201(Journal) ========================================================== Created: 2023-01-05 12:09:02 ConfID: 6692457 CauseID: 1557137583 OtherID: 1363323992 JT: Japanese Journal of Applied Physics MD: Matsuda,50,6s,602,2011,A Highly Sensitive Inorganic Resist for Directly Fabricating Thermally Stable Oxide Pattern on Si Substrate by Low-Energy Electron-Beam Direct Writing DOI: 10.1143/JJAP.50.06GD02(Journal) (6692457-N) DOI: 10.7567/JJAP.50.06GD02(Journal) ========================================================== Created: 2021-12-14 11:42:22 ConfID: 6397553 CauseID: 1515278078 OtherID: 1363323065 JT: Japanese Journal of Applied Physics MD: Lu,50,12r,129201,2011,Erratum: “Disappearance of Lowest-Order Transmission Resonance in Ag Film of Critical Thickness” DOI: 10.1143/JJAP.50.129201(Journal) (6397553-N) DOI: 10.7567/JJAP.50.129201(Journal) ========================================================== Created: 2023-01-05 12:09:09 ConfID: 6692470 CauseID: 1557137600 OtherID: 1363323096 JT: Japanese Journal of Applied Physics MD: Kim,50,1r,16501,2011,Novel Fabrication Method of a Round Microtip Based on Aluminum Spike Phenomenon DOI: 10.1143/JJAP.50.016501(Journal) (6692470-N) DOI: 10.7567/JJAP.50.016501(Journal) ========================================================== Created: 2021-12-14 11:42:21 ConfID: 6397552 CauseID: 1515278077 OtherID: 1363322960 JT: Japanese Journal of Applied Physics MD: Shah,50,11r,119202,2011,Publisher's Note: “Cluster Co-Existence and DC Field Effect on Re-entrant Spin Freezing Behavior in La0.85Ca0.15Mn0.95Fe0.05O Manganates” DOI: 10.1143/JJAP.50.119202(Journal) (6397552-N) DOI: 10.7567/JJAP.50.119202(Journal) ========================================================== Created: 2023-01-05 12:09:14 ConfID: 6692471 CauseID: 1557137603 OtherID: 1363324069 JT: Japanese Journal of Applied Physics MD: Pan,50,6s,605,2011,Method for Determining the Angle in Two Dimension Nanoscale: Pitch Grating DOI: 10.1143/JJAP.50.06GJ05(Journal) (6692471-N) DOI: 10.7567/JJAP.50.06GJ05(Journal) ========================================================== Created: 2021-12-14 11:42:25 ConfID: 6397555 CauseID: 1515278085 OtherID: 1363320184 JT: Japanese Journal of Applied Physics MD: Chen,51,1r,19201,2012,Erratum: “Structure and Microwave Dielectric Property Relations in Barium Cobalt Magnesium Niobate Ceramics” DOI: 10.1143/JJAP.51.019201(Journal) (6397555-N) DOI: 10.7567/JJAP.51.019201(Journal) ========================================================== Created: 2023-01-05 12:09:08 ConfID: 6692468 CauseID: 1557137597 OtherID: 1363324167 JT: Japanese Journal of Applied Physics MD: Tanigawa,50,7r,72701,2011,Optical Parametric Amplifier Pumped at 266 nm toward Ultrashort Near-Ultraviolet Gigawatt Pulses DOI: 10.1143/JJAP.50.072701(Journal) (6692468-N) DOI: 10.7567/JJAP.50.072701(Journal) ========================================================== Created: 2021-12-14 11:42:24 ConfID: 6397554 CauseID: 1515278079 OtherID: 1363323064 JT: Japanese Journal of Applied Physics MD: Park,50,12r,129202,2011,Erratum: “Comparison of Multilayer Dielectric Thin Films for Future Metal–Insulator–Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2” DOI: 10.1143/JJAP.50.129202(Journal) (6397554-N) DOI: 10.7567/JJAP.50.129202(Journal) ========================================================== Created: 2023-01-05 12:09:09 ConfID: 6692469 CauseID: 1557137599 OtherID: 1363324127 JT: Japanese Journal of Applied Physics MD: Ushio,50,7r,70104,2011,4H-SiC(0001) Basal Plane Stability during the Growth of Epitaxial Graphene on Inverted-Mesa Structures DOI: 10.1143/JJAP.50.070104(Journal) (6692469-N) DOI: 10.7567/JJAP.50.070104(Journal) ========================================================== Created: 2021-12-14 11:42:27 ConfID: 6397557 CauseID: 1515278087 OtherID: 1363320569 JT: Japanese Journal of Applied Physics MD: Acik,51,3r,39201,2012,Erratum: “Nature of Graphene Edges: A Review” DOI: 10.1143/JJAP.51.039201(Journal) (6397557-N) DOI: 10.7567/JJAP.51.039201(Journal) ========================================================== Created: 2023-01-05 12:09:07 ConfID: 6692466 CauseID: 1557137595 OtherID: 1363323121 JT: Japanese Journal of Applied Physics MD: Yamada,50,1s1,102,2011,Model of Reactive Microwave Plasma Discharge for Growth of Single-Crystal Diamond DOI: 10.1143/JJAP.50.01AB02(Journal) (6692466-N) DOI: 10.7567/JJAP.50.01AB02(Journal) ========================================================== Created: 2021-12-14 11:42:26 ConfID: 6397556 CauseID: 1515278086 OtherID: 1363320378 JT: Japanese Journal of Applied Physics MD: Yim,51,2r,29201,2012,Erratum: “Effects of Metal Electrode on the Electrical Performance of Amorphous In–Ga–Zn–O Thin Film Transistor” DOI: 10.1143/JJAP.51.029201(Journal) (6397556-N) DOI: 10.7567/JJAP.51.029201(Journal) ========================================================== Created: 2023-01-05 12:09:07 ConfID: 6692467 CauseID: 1557137596 OtherID: 1363323194 JT: Japanese Journal of Applied Physics MD: Yan,50,1s2,105,2011,Low-Voltage Organic Field-Effect Transistors Fabricated on Self-Assembled-Monolayer-Free SrTiO3 Insulator DOI: 10.1143/JJAP.50.01BC05(Journal) (6692467-N) DOI: 10.7567/JJAP.50.01BC05(Journal) ========================================================== Created: 2021-12-14 11:42:29 ConfID: 6397559 CauseID: 1515278089 OtherID: 1363321092 JT: Japanese Journal of Applied Physics MD: Shimizu,51,7r,79201,2012,Erratum: “Schottky-Barrier-Induced AC Surface Photovoltages in Au-Precipitated n-Type Si(001) Surfaces” DOI: 10.1143/JJAP.51.079201(Journal) (6397559-N) DOI: 10.7567/JJAP.51.079201(Journal) ========================================================== Created: 2023-01-05 12:09:06 ConfID: 6692464 CauseID: 1557137593 OtherID: 1363323406 JT: Japanese Journal of Applied Physics MD: Htay,50,3r,32301,2011,A Cadmium-Free Cu2ZnSnS4/ZnO Hetrojunction Solar Cell Prepared by Practicable Processes DOI: 10.1143/JJAP.50.032301(Journal) (6692464-N) DOI: 10.7567/JJAP.50.032301(Journal) ========================================================== Created: 2021-12-14 11:42:28 ConfID: 6397558 CauseID: 1515278088 OtherID: 1363320898 JT: Japanese Journal of Applied Physics MD: Lee,51,6r,69201,2012,Erratum: “Sensitivity Analysis of a Cracked Atomic Force Microscope Cantilever” DOI: 10.1143/JJAP.51.069201(Journal) (6397558-N) DOI: 10.7567/JJAP.51.069201(Journal) ========================================================== Created: 2023-01-05 12:09:06 ConfID: 6692465 CauseID: 1557137594 OtherID: 1363323339 JT: Japanese Journal of Applied Physics MD: Shizuno,50,3r,30207,2011,Synthesis of Diamondoids by Supercritical Xenon Discharge Plasma DOI: 10.1143/JJAP.50.030207(Journal) (6692465-N) DOI: 10.7567/JJAP.50.030207(Journal) ========================================================== Created: 2021-12-14 11:42:32 ConfID: 6397561 CauseID: 1515278094 OtherID: 1363319993 JT: Japanese Journal of Applied Physics MD: Mu,51,10r,109201,2012,Erratum: “Spontaneous Polygonization of Multiwalled Carbon Nanotubes: Perturbation Analysis” DOI: 10.1143/JJAP.51.109201(Journal) (6397561-N) DOI: 10.7567/JJAP.51.109201(Journal) ========================================================== Created: 2023-01-05 12:09:15 ConfID: 6692478 CauseID: 1557137612 OtherID: 1363324006 JT: Japanese Journal of Applied Physics MD: Shimizu,50,6s,601,2011,Preparation of Ultrahigh-Density Magnetic Nanowire Arrays beyond 1 Terabit/Inch2 on Si Substrate Using Anodic Aluminum Oxide Template DOI: 10.1143/JJAP.50.06GE01(Journal) (6692478-N) DOI: 10.7567/JJAP.50.06GE01(Journal) ========================================================== Created: 2021-12-14 11:42:31 ConfID: 6397560 CauseID: 1515278093 OtherID: 1363321266 JT: Japanese Journal of Applied Physics MD: Saitou,51,8r,89202,2012,Publisher's Note: “Birefringence Polarimeter Using Dual LiNbO3 Electrooptic Crystal Modulators” DOI: 10.1143/JJAP.51.089202(Journal) (6397560-N) DOI: 10.7567/JJAP.51.089202(Journal) ========================================================== Created: 2023-01-05 12:09:15 ConfID: 6692479 CauseID: 1557137613 OtherID: 1363323074 JT: Japanese Journal of Applied Physics MD: Fujiwara,50,1r,13001,2011,Fabrication of Magnetic Tunnel Junctions with a Synthetic Ferrimagnetic Free Layer for Magnetic Field Sensor Applications DOI: 10.1143/JJAP.50.013001(Journal) (6692479-N) DOI: 10.7567/JJAP.50.013001(Journal) ========================================================== Created: 2021-12-14 11:42:35 ConfID: 6397563 CauseID: 1515278101 OtherID: 1363319988 JT: Japanese Journal of Applied Physics MD: Osumi,51,10r,109203,2012,Erratum: “Basic Study of Detecting Defects in Solid Materials Using High-Intensity Aerial Ultrasonic Waves” DOI: 10.1143/JJAP.51.109203(Journal) (6397563-N) DOI: 10.7567/JJAP.51.109203(Journal) ========================================================== Created: 2023-01-05 12:09:12 ConfID: 6692476 CauseID: 1557137609 OtherID: 1363323172 JT: Japanese Journal of Applied Physics MD: Guo,50,1s1,104,2011,Growth of Single-Crystalline Nanorods in Atmospheric Plasma DOI: 10.1143/JJAP.50.01AH04(Journal) (6692476-N) DOI: 10.7567/JJAP.50.01AH04(Journal) ========================================================== Created: 2021-12-14 11:42:33 ConfID: 6397562 CauseID: 1515278095 OtherID: 1363319992 JT: Japanese Journal of Applied Physics MD: Song,51,10r,109202,2012,Erratum: “Focal Adhesion of Osteoblastic Cells on Titanium Surface with Amine Functionalities Formed by Plasma Polymerization” DOI: 10.1143/JJAP.51.109202(Journal) (6397562-N) DOI: 10.7567/JJAP.51.109202(Journal) ========================================================== Created: 2023-01-05 12:09:14 ConfID: 6692477 CauseID: 1557137611 OtherID: 1363324087 JT: Japanese Journal of Applied Physics MD: Hiroshima,50,6s,609,2011,Study on Change in UV Nanoimprint Pattern by Altering Shrinkage of UV Curable Resin DOI: 10.1143/JJAP.50.06GK09(Journal) (6692477-N) DOI: 10.7567/JJAP.50.06GK09(Journal) ========================================================== Created: 2023-01-05 12:09:11 ConfID: 6692474 CauseID: 1557137607 OtherID: 1363326140 JT: Japanese Journal of Applied Physics MD: Huang,50,6s,609,2011,Effect of Electron Density on Extreme Ultraviolet Output of a Z-Pinch Xe Discharge Produced Plasma Source DOI: 10.1143/JJAP.50.06GB09(Journal) (6692474-N) DOI: 10.7567/JJAP.50.06GB09(Journal) ========================================================== Created: 2023-01-05 12:09:12 ConfID: 6692475 CauseID: 1557137608 OtherID: 1363324119 JT: Japanese Journal of Applied Physics MD: Murakami,50,6s,616,2011,Evanescent-Wave-Driven Microrotors Produced by Two-Photon Microfabrication DOI: 10.1143/JJAP.50.06GM16(Journal) (6692475-N) DOI: 10.7567/JJAP.50.06GM16(Journal) ========================================================== Created: 2023-01-05 12:09:10 ConfID: 6692472 CauseID: 1557137605 OtherID: 1363324241 JT: Japanese Journal of Applied Physics MD: Shimada,50,7s,713,2011,Analysis of Reflection Powers from a Perfectly Matched Layer for Elastic Waves in the Frequency Domain Finite Element Model DOI: 10.1143/JJAP.50.07HC13(Journal) (6692472-N) DOI: 10.7567/JJAP.50.07HC13(Journal) ========================================================== Created: 2023-01-05 12:09:11 ConfID: 6692473 CauseID: 1557137606 OtherID: 1363324117 JT: Japanese Journal of Applied Physics MD: Li,50,6s,601,2011,Doubled Optical Path Length for Photonic Bandgap Fiber Gas Cell Using Micromirror DOI: 10.1143/JJAP.50.06GM01(Journal) (6692473-N) DOI: 10.7567/JJAP.50.06GM01(Journal) ========================================================== Created: 2023-01-05 12:08:45 ConfID: 6692422 CauseID: 1557137549 OtherID: 1363324112 JT: Japanese Journal of Applied Physics MD: Han,50,6s,604,2011,Field Emission Ion Source Using a Carbon Nanotube Array for Micro Time-of-Flight Mass Spectrometer DOI: 10.1143/JJAP.50.06GM04(Journal) (6692422-N) DOI: 10.7567/JJAP.50.06GM04(Journal) ========================================================== Created: 2023-01-05 12:08:46 ConfID: 6692423 CauseID: 1557137550 OtherID: 1363323220 JT: Japanese Journal of Applied Physics MD: Farahbakhsh,50,1s2,106,2011,Effect of Mechanical Alloying Parameters on the Formation of Ni–Cu Solid Solution Coating on the Ni Balls DOI: 10.1143/JJAP.50.01BE06(Journal) (6692423-N) DOI: 10.7567/JJAP.50.01BE06(Journal) ========================================================== Created: 2023-01-05 12:08:44 ConfID: 6692420 CauseID: 1557137545 OtherID: 1363324109 JT: Japanese Journal of Applied Physics MD: Kim,50,6s,611,2011,Fabrication of Mutilayered Microgear Using a Vertically Modularized and Sectioned Micromold System by X-ray Micromachining Process DOI: 10.1143/JJAP.50.06GM11(Journal) (6692420-N) DOI: 10.7567/JJAP.50.06GM11(Journal) ========================================================== Created: 2023-01-05 12:08:45 ConfID: 6692421 CauseID: 1557137548 OtherID: 1363324002 JT: Japanese Journal of Applied Physics MD: Maeda,50,6s,612,2011,Study of Graphene Growth by Gas-Source Molecular Beam Epitaxy Using Cracked Ethanol: Influence of Gas Flow Rate on Graphitic Material Deposition DOI: 10.1143/JJAP.50.06GE12(Journal) (6692421-N) DOI: 10.7567/JJAP.50.06GE12(Journal) ========================================================== Created: 2023-01-05 12:08:42 ConfID: 6692418 CauseID: 1557137543 OtherID: 1363323996 JT: Japanese Journal of Applied Physics MD: Shiraishi,50,6s,604,2011,Improvement of Flare Modeling and Derivation for Extreme Ultraviolet Optics DOI: 10.1143/JJAP.50.06GB04(Journal) (6692418-N) DOI: 10.7567/JJAP.50.06GB04(Journal) ========================================================== Created: 2023-01-05 12:08:43 ConfID: 6692419 CauseID: 1557137544 OtherID: 1363323082 JT: Japanese Journal of Applied Physics MD: Akiyama,50,1r,15002,2011,Gas Detection of Volatile Organic Compounds Using Trigonal Selenium Nanowires DOI: 10.1143/JJAP.50.015002(Journal) (6692419-N) DOI: 10.7567/JJAP.50.015002(Journal) ========================================================== Created: 2023-01-05 12:08:42 ConfID: 6692416 CauseID: 1557137542 OtherID: 1363323179 JT: Japanese Journal of Applied Physics MD: Nishizawa,50,1s2,102,2011,Organic Thin-Film Transistors with Tailored Liquid Sources of High-κ HfO2 Using Excimer Laser Irradiation DOI: 10.1143/JJAP.50.01BC02(Journal) (6692416-N) DOI: 10.7567/JJAP.50.01BC02(Journal) ========================================================== Created: 2023-01-05 12:34:56 ConfID: 6692417 CauseID: 1557141049 OtherID: 1363320421 JT: Japanese Journal of Applied Physics MD: Huang,51,2s,208,2012,High-Voltage-Tolerant Level Converter for Embedded Complementary Metal–Oxide–Semiconductor Nonvolatile Memories DOI: 10.1143/JJAP.51.02BE08(Journal) (6692417-N) DOI: 10.7567/JJAP.51.02BE08(Journal) ========================================================== Created: 2023-01-05 12:08:48 ConfID: 6692430 CauseID: 1557137555 OtherID: 1363326139 JT: Japanese Journal of Applied Physics MD: Ng,50,6s,607,2011,Impact of Process-Effect Correction Strategies on Variability of Critical Dimension and Electrical Characteristics in Extreme Ultraviolet Lithography DOI: 10.1143/JJAP.50.06GB07(Journal) (6692430-N) DOI: 10.7567/JJAP.50.06GB07(Journal) ========================================================== Created: 2023-01-05 12:08:49 ConfID: 6692431 CauseID: 1557137557 OtherID: 1363324201 JT: Japanese Journal of Applied Physics MD: Chen,50,7r,75501,2011,Modulating the Residual Stress of Ion-Assisted TiO2 Films during Annealing with Film Thickness and Substrate Temperature DOI: 10.1143/JJAP.50.075501(Journal) (6692431-N) DOI: 10.7567/JJAP.50.075501(Journal) ========================================================== Created: 2023-01-05 12:08:47 ConfID: 6692428 CauseID: 1557137553 OtherID: 1363324027 JT: Japanese Journal of Applied Physics MD: Suga,50,6s,611,2011,Threshold Current Density of the Resistance Switching in Pt Nanogap Electrode DOI: 10.1143/JJAP.50.06GF11(Journal) (6692428-N) DOI: 10.7567/JJAP.50.06GF11(Journal) ========================================================== Created: 2023-01-05 12:08:48 ConfID: 6692429 CauseID: 1557137554 OtherID: 1363323080 JT: Japanese Journal of Applied Physics MD: Takami,50,1r,13002,2011,Effects of Structural Disorder and Charge Carriers on the Magnetic and Transport Properties of Sr0.7R0.3CoO3-δ (R = Y or Dy0.45Er0.55) DOI: 10.1143/JJAP.50.013002(Journal) (6692429-N) DOI: 10.7567/JJAP.50.013002(Journal) ========================================================== Created: 2023-01-05 12:08:46 ConfID: 6692426 CauseID: 1557137551 OtherID: 1363323068 JT: Japanese Journal of Applied Physics MD: Noguchi,50,1r,10204,2011,Technique for High-Rate, Low-Temperature Deposition of TiO2 Photocatalytic Thin Film Using Radical-Assisted Sputtering DOI: 10.1143/JJAP.50.010204(Journal) (6692426-N) DOI: 10.7567/JJAP.50.010204(Journal) ========================================================== Created: 2023-01-05 12:08:47 ConfID: 6692427 CauseID: 1557137552 OtherID: 1363324105 JT: Japanese Journal of Applied Physics MD: Liang,50,6s,606,2011,Design and Fabrication of Quartz Micro-Electro-Mechanical System-Based Double-Ended Tuning Fork with Variable Sections DOI: 10.1143/JJAP.50.06GM06(Journal) (6692427-N) DOI: 10.7567/JJAP.50.06GM06(Journal) ========================================================== Created: 2023-01-05 12:35:28 ConfID: 6692424 CauseID: 1557141120 OtherID: 1363320420 JT: Japanese Journal of Applied Physics MD: Na,51,2s,203,2012,A Compact Half Select Disturb Free Static Random Access Memory Cell with Stacked Vertical Metal–Oxide–Semiconductor Field-Effect Transistor DOI: 10.1143/JJAP.51.02BD03(Journal) (6692424-N) DOI: 10.7567/JJAP.51.02BD03(Journal) ========================================================== Created: 2023-01-05 12:35:39 ConfID: 6692425 CauseID: 1557141141 OtherID: 1363320419 JT: Japanese Journal of Applied Physics MD: Cho,51,2s,202,2012,Design Optimization of Back-Gated Thin-Body Silicon-on-Insulator Capacitorless Dynamic Random Access Memory Cell DOI: 10.1143/JJAP.51.02BD02(Journal) (6692425-N) DOI: 10.7567/JJAP.51.02BD02(Journal) ========================================================== Created: 2023-01-05 12:36:32 ConfID: 6692438 CauseID: 1557141264 OtherID: 1363320465 JT: Japanese Journal of Applied Physics MD: Lee,51,2s,213,2012,p-Type Tunneling Transistors with Polycrystalline Silicon by Sequential Lateral Solidification Growth Technique DOI: 10.1143/JJAP.51.02BJ13(Journal) (6692438-N) DOI: 10.7567/JJAP.51.02BJ13(Journal) ========================================================== Created: 2023-01-05 12:08:52 ConfID: 6692439 CauseID: 1557137565 OtherID: 1363323090 JT: Japanese Journal of Applied Physics MD: Ashurov,50,1r,12501,2011,Influence of γ-Radiation Dose Growth and Dose Rates on Luminescence Properties of Pure Silica Core Fibers with High-OH Group Content DOI: 10.1143/JJAP.50.012501(Journal) (6692439-N) DOI: 10.7567/JJAP.50.012501(Journal) ========================================================== Created: 2023-01-05 12:08:50 ConfID: 6692436 CauseID: 1557137563 OtherID: 1363324066 JT: Japanese Journal of Applied Physics MD: Matsuura,50,6s,613,2011,Paramagnetic Properties of Size-Controlled Squid Ink Particles Dispersed in Water DOI: 10.1143/JJAP.50.06GH13(Journal) (6692436-N) DOI: 10.7567/JJAP.50.06GH13(Journal) ========================================================== Created: 2023-01-05 12:08:51 ConfID: 6692437 CauseID: 1557137564 OtherID: 1363323102 JT: Japanese Journal of Applied Physics MD: Yoon,50,1r,17201,2011,Improvement of Filtration Performance Using Self-Tuning of Flow Resistance DOI: 10.1143/JJAP.50.017201(Journal) (6692437-N) DOI: 10.7567/JJAP.50.017201(Journal) ========================================================== Created: 2023-01-05 12:08:54 ConfID: 6692434 CauseID: 1557137560 OtherID: 1363324193 JT: Japanese Journal of Applied Physics MD: Chang,50,7r,75201,2011,Anodic Aluminum Oxide Diodes DOI: 10.1143/JJAP.50.075201(Journal) (6692434-N) DOI: 10.7567/JJAP.50.075201(Journal) ========================================================== Created: 2023-01-05 12:08:50 ConfID: 6692435 CauseID: 1557137561 OtherID: 1363323077 JT: Japanese Journal of Applied Physics MD: Yamada,50,1r,12502,2011,Near-Infrared Polarizer with Tungsten Silicide Wire Grids DOI: 10.1143/JJAP.50.012502(Journal) (6692435-N) DOI: 10.7567/JJAP.50.012502(Journal) ========================================================== Created: 2023-01-05 12:08:53 ConfID: 6692432 CauseID: 1557137558 OtherID: 1363324065 JT: Japanese Journal of Applied Physics MD: Park,50,6s,602,2011,Adsorption and Diffusion of Li and Ni on Graphene with Boron Substitution for Hydrogen Storage: Ab-initio Method DOI: 10.1143/JJAP.50.06GJ02(Journal) (6692432-N) DOI: 10.7567/JJAP.50.06GJ02(Journal) ========================================================== Created: 2023-01-05 12:08:54 ConfID: 6692433 CauseID: 1557137559 OtherID: 1363324047 JT: Japanese Journal of Applied Physics MD: Kim,50,6s,611,2011,Nanograting Fabrication on the Surface of Silicon and Gallium Arsenide Using Femtosecond Laser Pulses DOI: 10.1143/JJAP.50.06GG11(Journal) (6692433-N) DOI: 10.7567/JJAP.50.06GG11(Journal) ========================================================== Created: 2023-01-05 12:08:57 ConfID: 6692446 CauseID: 1557137573 OtherID: 1363323142 JT: Japanese Journal of Applied Physics MD: Yusop,50,1s1,110,2011,Morphology and Size of Ion Induced Carbon Nanofibers: Effect of Ion Incidence Angle, Sputtering Rate, and Temperature DOI: 10.1143/JJAP.50.01AF10(Journal) (6692446-N) DOI: 10.7567/JJAP.50.01AF10(Journal) ========================================================== Created: 2023-01-05 12:38:43 ConfID: 6692447 CauseID: 1557141561 OtherID: 1363323284 JT: Japanese Journal of Applied Physics MD: Kawamura,50,2r,20201,2011,Absorption Change Induced by Electric Field of an InGaAsP/InAlAs/InP Asymmetric Quantum Well Structure Gown on InP Substrates DOI: 10.1143/JJAP.50.020201(Journal) (6692447-N) DOI: 10.7567/JJAP.50.020201(Journal) ========================================================== Created: 2023-01-05 12:08:56 ConfID: 6692444 CauseID: 1557137571 OtherID: 1363323202 JT: Japanese Journal of Applied Physics MD: Shirahata,50,1s2,103,2011,Fourier-Transform Infrared Absorption Spectroscopy of Chromium Nitride Thin Film DOI: 10.1143/JJAP.50.01BE03(Journal) (6692444-N) DOI: 10.7567/JJAP.50.01BE03(Journal) ========================================================== Created: 2023-01-05 12:08:56 ConfID: 6692445 CauseID: 1557137572 OtherID: 1363323169 JT: Japanese Journal of Applied Physics MD: Venkatachalam,50,1s1,103,2011,Properties of Indium Tin Oxide Thin Films Deposited on Glass and Clay Substrates by Ion-Beam Sputter Deposition Method DOI: 10.1143/JJAP.50.01AK03(Journal) (6692445-N) DOI: 10.7567/JJAP.50.01AK03(Journal) ========================================================== Created: 2023-01-05 12:08:55 ConfID: 6692442 CauseID: 1557137569 OtherID: 1363323141 JT: Japanese Journal of Applied Physics MD: Ghosh,50,1s1,109,2011,Improvement in Field Electron Emission Performance of Natural-Precursor-Grown Carbon Nanofibers by Thermal Annealing in Argon Atmosphere DOI: 10.1143/JJAP.50.01AF09(Journal) (6692442-N) DOI: 10.7567/JJAP.50.01AF09(Journal) ========================================================== Created: 2023-01-05 12:08:55 ConfID: 6692443 CauseID: 1557137570 OtherID: 1363323132 JT: Japanese Journal of Applied Physics MD: Lee,50,1s1,110,2011,Structural, Electrical, and Optical Properties of SnO2:Sb Films Prepared on Flexible Substrate at Room Temperature DOI: 10.1143/JJAP.50.01AB10(Journal) (6692443-N) DOI: 10.7567/JJAP.50.01AB10(Journal) ========================================================== Created: 2023-01-05 12:08:52 ConfID: 6692440 CauseID: 1557137566 OtherID: 1363324075 JT: Japanese Journal of Applied Physics MD: Okamoto,50,6s,607,2011,Distinctive Feature of Ripening During Growth Interruption of InGaAs Quantum Dot Epitaxy Using Bi as a Surfactant DOI: 10.1143/JJAP.50.06GH07(Journal) (6692440-N) DOI: 10.7567/JJAP.50.06GH07(Journal) ========================================================== Created: 2023-01-05 12:08:53 ConfID: 6692441 CauseID: 1557137567 OtherID: 1363323140 JT: Japanese Journal of Applied Physics MD: Inoue,50,1s1,107,2011,Electric Double Layer Capacitance of Graphene-Like Materials Derived from Single-Walled Carbon Nanotubes DOI: 10.1143/JJAP.50.01AF07(Journal) (6692441-N) DOI: 10.7567/JJAP.50.01AF07(Journal) ========================================================== Created: 2023-01-05 12:08:26 ConfID: 6692390 CauseID: 1557137514 OtherID: 1363323931 JT: Japanese Journal of Applied Physics MD: Takeno,50,6r,62501,2011,Phase Modulation of Broadband Light Using Liquid-Crystal-on-Silicon Spatial Light Modulator DOI: 10.1143/JJAP.50.062501(Journal) (6692390-N) DOI: 10.7567/JJAP.50.062501(Journal) ========================================================== Created: 2023-01-05 12:08:27 ConfID: 6692391 CauseID: 1557137515 OtherID: 1363323171 JT: Japanese Journal of Applied Physics MD: Jamian,50,1s1,106,2011,Finite Element Analysis of Severe Plastic Deformation of Difficult-to-Work Material by Equal-Channel Angular Pressing at Ambient Temperature DOI: 10.1143/JJAP.50.01AJ06(Journal) (6692391-N) DOI: 10.7567/JJAP.50.01AJ06(Journal) ========================================================== Created: 2023-01-05 12:08:25 ConfID: 6692388 CauseID: 1557137512 OtherID: 1363323139 JT: Japanese Journal of Applied Physics MD: Okada,50,1s1,108,2011,Study of Electrical Response in Pt/GaN Schottky Barrier Diode to CO Gas for High Temperature Gas Sensor DOI: 10.1143/JJAP.50.01AD08(Journal) (6692388-N) DOI: 10.7567/JJAP.50.01AD08(Journal) ========================================================== Created: 2023-01-05 12:08:26 ConfID: 6692389 CauseID: 1557137513 OtherID: 1363324051 JT: Japanese Journal of Applied Physics MD: Kim,50,6s,609,2011,Morphological and Electrical Properties of Self-Textured Aluminum-Doped Zinc Oxide Films Prepared by Direct Current Magnetron Sputtering for Application to Amorphous Silicon Solar Cells DOI: 10.1143/JJAP.50.06GG09(Journal) (6692389-N) DOI: 10.7567/JJAP.50.06GG09(Journal) ========================================================== Created: 2023-01-05 12:08:28 ConfID: 6692386 CauseID: 1557137510 OtherID: 1363323166 JT: Japanese Journal of Applied Physics MD: Chang,50,1s1,105,2011,A Novel Fabrication of p–n Diode Based on ZnO Nanowire/p-NiO Heterojunction DOI: 10.1143/JJAP.50.01AJ05(Journal) (6692386-N) DOI: 10.7567/JJAP.50.01AJ05(Journal) ========================================================== Created: 2023-01-05 12:08:29 ConfID: 6692387 CauseID: 1557137511 OtherID: 1363323170 JT: Japanese Journal of Applied Physics MD: Ozawa,50,1s1,104,2011,Nitrile Hydration by Co(III) Complex with Oxygenated S Atoms Inserted into Mesoporous Silica DOI: 10.1143/JJAP.50.01AJ04(Journal) (6692387-N) DOI: 10.7567/JJAP.50.01AJ04(Journal) ========================================================== Created: 2023-01-05 12:08:25 ConfID: 6692384 CauseID: 1557137508 OtherID: 1363323073 JT: Japanese Journal of Applied Physics MD: Ichikawa,50,1r,11201,2011,Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement DOI: 10.1143/JJAP.50.011201(Journal) (6692384-N) DOI: 10.7567/JJAP.50.011201(Journal) ========================================================== Created: 2023-01-05 12:08:28 ConfID: 6692385 CauseID: 1557137509 OtherID: 1363323951 JT: Japanese Journal of Applied Physics MD: Zhao,50,6r,65601,2011,Growth Behavior of High-Indium-Composition InGaN Quantum Dots Using Growth Interruption Method DOI: 10.1143/JJAP.50.065601(Journal) (6692385-N) DOI: 10.7567/JJAP.50.065601(Journal) ========================================================== Created: 2023-01-05 12:08:34 ConfID: 6692398 CauseID: 1557137523 OtherID: 1363323070 JT: Japanese Journal of Applied Physics MD: Sano,50,1r,10108,2011,Monte Carlo Study of the Coulomb Interaction in Nanoscale Silicon Devices DOI: 10.1143/JJAP.50.010108(Journal) (6692398-N) DOI: 10.7567/JJAP.50.010108(Journal) ========================================================== Created: 2023-01-05 12:08:31 ConfID: 6692399 CauseID: 1557137524 OtherID: 1363324074 JT: Japanese Journal of Applied Physics MD: Wada,50,6s,607,2011,Fabrication of Zero-Mode Waveguide by Ultraviolet Nanoimprint Lithography Lift-Off Process DOI: 10.1143/JJAP.50.06GK07(Journal) (6692399-N) DOI: 10.7567/JJAP.50.06GK07(Journal) ========================================================== Created: 2023-01-05 12:08:33 ConfID: 6692396 CauseID: 1557137521 OtherID: 1363326137 JT: Japanese Journal of Applied Physics MD: Levinson,50,6s,601,2011,Lithography – Green and Getting Greener DOI: 10.1143/JJAP.50.06GA01(Journal) (6692396-N) DOI: 10.7567/JJAP.50.06GA01(Journal) ========================================================== Created: 2023-01-05 12:08:34 ConfID: 6692397 CauseID: 1557137522 OtherID: 1363323161 JT: Japanese Journal of Applied Physics MD: Qu,50,1s1,106,2011,Three-Dimensionally Ordered Macroporous ZrO2:Tb3+ Films: Synthesis, Characterization, and Photoluminescence Properties DOI: 10.1143/JJAP.50.01AK06(Journal) (6692397-N) DOI: 10.7567/JJAP.50.01AK06(Journal) ========================================================== Created: 2023-01-05 12:08:30 ConfID: 6692394 CauseID: 1557137519 OtherID: 1363324079 JT: Japanese Journal of Applied Physics MD: Tanii,50,6s,601,2011,Application of Organosilane Monolayer Template to Quantitative Evaluation of Cancer Cell Adhesive Ability DOI: 10.1143/JJAP.50.06GL01(Journal) (6692394-N) DOI: 10.7567/JJAP.50.06GL01(Journal) ========================================================== Created: 2023-01-05 12:08:33 ConfID: 6692395 CauseID: 1557137520 OtherID: 1363323182 JT: Japanese Journal of Applied Physics MD: Mohamad,50,1s2,104,2011,Bias-Induced Threshold Voltage Shifts in Organic Thin-Film Transistors by Soluble Fullerene Layers on Gate Dielectric DOI: 10.1143/JJAP.50.01BC04(Journal) (6692395-N) DOI: 10.7567/JJAP.50.01BC04(Journal) ========================================================== Created: 2023-01-05 12:08:27 ConfID: 6692392 CauseID: 1557137516 OtherID: 1363323192 JT: Japanese Journal of Applied Physics MD: Satoh,50,1s2,109,2011,Self-Aligned Organic Light-Emitting Diodes with Color Changing by Ink-Jet Printing Dots DOI: 10.1143/JJAP.50.01BC09(Journal) (6692392-N) DOI: 10.7567/JJAP.50.01BC09(Journal) ========================================================== Created: 2023-01-05 12:08:30 ConfID: 6692393 CauseID: 1557137518 OtherID: 1363324116 JT: Japanese Journal of Applied Physics MD: Hirashima,50,6s,602,2011,Fabrication of a Flexible Array for Tactile Sensors with Microcantilevers and the Measurement of the Distribution of Normal and Shear Forces DOI: 10.1143/JJAP.50.06GM02(Journal) (6692393-N) DOI: 10.7567/JJAP.50.06GM02(Journal) ========================================================== Created: 2023-01-05 12:08:38 ConfID: 6692406 CauseID: 1557137531 OtherID: 1363324113 JT: Japanese Journal of Applied Physics MD: Shuto,50,6s,605,2011,Microjoining of LSI Chips on Poly(ethylene naphthalate) Using Compliant Bump DOI: 10.1143/JJAP.50.06GM05(Journal) (6692406-N) DOI: 10.7567/JJAP.50.06GM05(Journal) ========================================================== Created: 2023-01-05 12:08:39 ConfID: 6692407 CauseID: 1557137533 OtherID: 1363323093 JT: Japanese Journal of Applied Physics MD: Park,50,1r,12503,2011,Distributed Bragg Reflector Using Nanoporous TiO2 Thin Films DOI: 10.1143/JJAP.50.012503(Journal) (6692407-N) DOI: 10.7567/JJAP.50.012503(Journal) ========================================================== Created: 2023-01-05 12:08:35 ConfID: 6692404 CauseID: 1557137529 OtherID: 1363324095 JT: Japanese Journal of Applied Physics MD: Xu,50,6s,611,2011,Effects of Resist Thickness and Viscoelasticity on the Cavity Filling Capability in Bilayer Thermal Embossing DOI: 10.1143/JJAP.50.06GK11(Journal) (6692404-N) DOI: 10.7567/JJAP.50.06GK11(Journal) ========================================================== Created: 2023-01-05 12:08:38 ConfID: 6692405 CauseID: 1557137530 OtherID: 1363324081 JT: Japanese Journal of Applied Physics MD: Hattori,50,6s,606,2011,Improvement of Particle Alignment Control and Precise Image Acquisition for On-Chip High-Speed Imaging Cell Sorter DOI: 10.1143/JJAP.50.06GL06(Journal) (6692405-N) DOI: 10.7567/JJAP.50.06GL06(Journal) ========================================================== Created: 2023-01-05 12:08:32 ConfID: 6692402 CauseID: 1557137527 OtherID: 1363323237 JT: Japanese Journal of Applied Physics MD: Kato,50,1s2,101,2011,Density Functional Theory Study of the Interaction of Magnesium Ions with Graphene Chip DOI: 10.1143/JJAP.50.01BJ01(Journal) (6692402-N) DOI: 10.7567/JJAP.50.01BJ01(Journal) ========================================================== Created: 2023-01-05 12:08:35 ConfID: 6692403 CauseID: 1557137528 OtherID: 1363323079 JT: Japanese Journal of Applied Physics MD: Liu,50,1r,14202,2011,Superior Reliability of Gate-All-Around Polycrystalline Silicon Thin-Film Transistors with Vacuum Cavities Next to Gate Oxide Edges DOI: 10.1143/JJAP.50.014202(Journal) (6692403-N) DOI: 10.7567/JJAP.50.014202(Journal) ========================================================== Created: 2023-01-05 12:08:31 ConfID: 6692400 CauseID: 1557137525 OtherID: 1363323942 JT: Japanese Journal of Applied Physics MD: Nanjo,50,6r,64101,2011,Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts DOI: 10.1143/JJAP.50.064101(Journal) (6692400-N) DOI: 10.7567/JJAP.50.064101(Journal) ========================================================== Created: 2023-01-05 12:08:32 ConfID: 6692401 CauseID: 1557137526 OtherID: 1363323979 JT: Japanese Journal of Applied Physics MD: Niibe,50,6s,605,2011,Nonlinear Behavior of Decrease in Reflectivity of Multilayer Mirrors for Extreme Ultraviolet Lithography Optics by High-Flux Extreme Ultraviolet Irradiation in Various Vacuum Environments DOI: 10.1143/JJAP.50.06GB05(Journal) (6692401-N) DOI: 10.7567/JJAP.50.06GB05(Journal) ========================================================== Created: 2023-01-05 12:08:41 ConfID: 6692414 CauseID: 1557137540 OtherID: 1363323087 JT: Japanese Journal of Applied Physics MD: Omura,50,1r,14201,2011,Design Feasibility of High-Performance Si Wire Gate-All-Around Metal–Oxide–Semiconductor Field-Effect Transistor in Sub-30-nm-Channel Regime DOI: 10.1143/JJAP.50.014201(Journal) (6692414-N) DOI: 10.7567/JJAP.50.014201(Journal) ========================================================== Created: 2023-01-05 12:08:41 ConfID: 6692415 CauseID: 1557137541 OtherID: 1363324085 JT: Japanese Journal of Applied Physics MD: Kirchner,50,6s,613,2011,Degradation of Perfluorotrichlorosilane Antisticking Layers: The Impact on Mold Cleaning, Ultraviolet-Nanoimprinting, and Bonded Ultraviolet-Nanoimprint Molds DOI: 10.1143/JJAP.50.06GK13(Journal) (6692415-N) DOI: 10.7567/JJAP.50.06GK13(Journal) ========================================================== Created: 2023-01-05 12:08:40 ConfID: 6692412 CauseID: 1557137538 OtherID: 1363323092 JT: Japanese Journal of Applied Physics MD: Ichitsubo,50,1r,13004,2011,Formation of Columnar-Shaped Structure of Fe in Fe–Cr–Sn Thin Films and Its Shape-Magnetic Anisotropy DOI: 10.1143/JJAP.50.013004(Journal) (6692412-N) DOI: 10.7567/JJAP.50.013004(Journal) ========================================================== Created: 2023-01-05 12:08:40 ConfID: 6692413 CauseID: 1557137539 OtherID: 1363324046 JT: Japanese Journal of Applied Physics MD: Yang,50,6s,605,2011,Nanostructured ZnO/Conjugated Polymer for p–n Heterojunctions DOI: 10.1143/JJAP.50.06GH05(Journal) (6692413-N) DOI: 10.7567/JJAP.50.06GH05(Journal) ========================================================== Created: 2023-01-05 12:08:37 ConfID: 6692410 CauseID: 1557137536 OtherID: 1363324034 JT: Japanese Journal of Applied Physics MD: Lee,50,6s,613,2011,Electrical Characteristics of WSi2 Nanocrystal Capacitors with Barrier-Engineered High-k Tunnel Layers DOI: 10.1143/JJAP.50.06GF13(Journal) (6692410-N) DOI: 10.7567/JJAP.50.06GF13(Journal) ========================================================== Created: 2023-01-05 12:08:37 ConfID: 6692411 CauseID: 1557137537 OtherID: 1363323159 JT: Japanese Journal of Applied Physics MD: Oshima,50,1s1,106,2011,Development of Atmospheric Pressure Plasma Jet with Slit Nozzle DOI: 10.1143/JJAP.50.01AH06(Journal) (6692411-N) DOI: 10.7567/JJAP.50.01AH06(Journal) ========================================================== Created: 2023-01-05 12:08:36 ConfID: 6692408 CauseID: 1557137534 OtherID: 1363324022 JT: Japanese Journal of Applied Physics MD: Mamat,50,6s,605,2011,Performance of an Ultraviolet Photoconductive Sensor Using Well-Aligned Aluminium-Doped Zinc-Oxide Nanorod Arrays Annealed in an Air and Oxygen Environment DOI: 10.1143/JJAP.50.06GF05(Journal) (6692408-N) DOI: 10.7567/JJAP.50.06GF05(Journal) ========================================================== Created: 2023-01-05 12:08:36 ConfID: 6692409 CauseID: 1557137535 OtherID: 1363323168 JT: Japanese Journal of Applied Physics MD: Jeon,50,1s1,101,2011,Fabrication of the CuInGaSe Pellet and Characterization of the Thin Film DOI: 10.1143/JJAP.50.01AG01(Journal) (6692409-N) DOI: 10.7567/JJAP.50.01AG01(Journal) ========================================================== Created: 2023-01-05 12:08:12 ConfID: 6692358 CauseID: 1557137476 OtherID: 1363323146 JT: Japanese Journal of Applied Physics MD: Wu,50,1s1,107,2011,Growth, Fabrication, and Characterization of InGaAsN Double Heterojunction Solar Cells DOI: 10.1143/JJAP.50.01AD07(Journal) (6692358-N) DOI: 10.7567/JJAP.50.01AD07(Journal) ========================================================== Created: 2023-01-05 12:08:10 ConfID: 6692359 CauseID: 1557137477 OtherID: 1363324015 JT: Japanese Journal of Applied Physics MD: Sofue,50,6s,607,2011,Highly Sensitive Electrical Detection of Sodium Ions Based on Graphene Field-Effect Transistors DOI: 10.1143/JJAP.50.06GE07(Journal) (6692359-N) DOI: 10.7567/JJAP.50.06GE07(Journal) ========================================================== Created: 2023-01-05 12:34:09 ConfID: 6692356 CauseID: 1557140926 OtherID: 1363320431 JT: Japanese Journal of Applied Physics MD: Jaw,51,2s,209,2012,Reduced-Ripple p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Charge Pump Circuit with Small Filtering Capacitance DOI: 10.1143/JJAP.51.02BE09(Journal) (6692356-N) DOI: 10.7567/JJAP.51.02BE09(Journal) ========================================================== Created: 2023-01-05 12:34:13 ConfID: 6692357 CauseID: 1557140936 OtherID: 1363320422 JT: Japanese Journal of Applied Physics MD: Yamashita,51,2s,205,2012,Efficient Image-Vector-Generation Processor for Edge-Based Complementary Feature Representations DOI: 10.1143/JJAP.51.02BE05(Journal) (6692357-N) DOI: 10.7567/JJAP.51.02BE05(Journal) ========================================================== Created: 2023-01-05 12:08:11 ConfID: 6692354 CauseID: 1557137474 OtherID: 1363324038 JT: Japanese Journal of Applied Physics MD: Akahane,50,6s,604,2011,Orientation-Controlled and Long-Range-Ordered Self-Assembled Nanodot Array for Ultrahigh-Density Bit-Patterned Media DOI: 10.1143/JJAP.50.06GG04(Journal) (6692354-N) DOI: 10.7567/JJAP.50.06GG04(Journal) ========================================================== Created: 2023-01-05 12:08:12 ConfID: 6692355 CauseID: 1557137475 OtherID: 1363323137 JT: Japanese Journal of Applied Physics MD: Ishii,50,1s1,106,2011,White Light Emission from Mesoporous Carbon–Silica Nanocomposites DOI: 10.1143/JJAP.50.01AF06(Journal) (6692355-N) DOI: 10.7567/JJAP.50.01AF06(Journal) ========================================================== Created: 2023-01-05 12:08:07 ConfID: 6692352 CauseID: 1557137471 OtherID: 1363324025 JT: Japanese Journal of Applied Physics MD: Mori,50,6s,614,2011,Tunnel Field-Effect Transistors with Extremely Low Off-Current Using Shadowing Effect in Drain Implantation DOI: 10.1143/JJAP.50.06GF14(Journal) (6692352-N) DOI: 10.7567/JJAP.50.06GF14(Journal) ========================================================== Created: 2023-01-05 12:08:07 ConfID: 6692353 CauseID: 1557137472 OtherID: 1363324151 JT: Japanese Journal of Applied Physics MD: Kishi,50,7r,71101,2011,Controllability of Electrical Conductivity by Oxygen Vacancies and Charge Carrier Trapping at Interface between CoO and Electrodes DOI: 10.1143/JJAP.50.071101(Journal) (6692353-N) DOI: 10.7567/JJAP.50.071101(Journal) ========================================================== Created: 2023-01-05 12:08:15 ConfID: 6692366 CauseID: 1557137487 OtherID: 1363324019 JT: Japanese Journal of Applied Physics MD: Li,50,6s,621,2011,Low-Frequency Contact Noise of GaN Nanowire Device Detected by Cross-Spectrum Technique DOI: 10.1143/JJAP.50.06GF21(Journal) (6692366-N) DOI: 10.7567/JJAP.50.06GF21(Journal) ========================================================== Created: 2023-01-05 12:08:16 ConfID: 6692367 CauseID: 1557137488 OtherID: 1363323133 JT: Japanese Journal of Applied Physics MD: Sakai,50,1s1,101,2011,Metal Organic Chemical Vapor Deposition Growth and Characterization of AlInN-Based Schottky Ultraviolet Photodiodes on AlN Template DOI: 10.1143/JJAP.50.01AD01(Journal) (6692367-N) DOI: 10.7567/JJAP.50.01AD01(Journal) ========================================================== Created: 2023-01-05 12:08:11 ConfID: 6692364 CauseID: 1557137483 OtherID: 1363323944 JT: Japanese Journal of Applied Physics MD: Lin,50,6r,65801,2011,Low-Temperature Sintering and Microwave Dielectric Properties of Ba2Ti9O20 Ceramics with CaO–B2O3–ZnO Glass Additions DOI: 10.1143/JJAP.50.065801(Journal) (6692364-N) DOI: 10.7567/JJAP.50.065801(Journal) ========================================================== Created: 2023-01-05 12:08:16 ConfID: 6692365 CauseID: 1557137486 OtherID: 1363323085 JT: Japanese Journal of Applied Physics MD: Lee,50,1r,11501,2011,Conduction Mechanism and Low Frequency Noise Analysis in Al/Pr0.7Ca0.3MnO3 for Bipolar Resistive Switching DOI: 10.1143/JJAP.50.011501(Journal) (6692365-N) DOI: 10.7567/JJAP.50.011501(Journal) ========================================================== Created: 2023-01-05 12:08:14 ConfID: 6692362 CauseID: 1557137480 OtherID: 1363323062 JT: Japanese Journal of Applied Physics MD: Takagi,50,1r,10110,2011,Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Full Ballistic Transport DOI: 10.1143/JJAP.50.010110(Journal) (6692362-N) DOI: 10.7567/JJAP.50.010110(Journal) ========================================================== Created: 2023-01-05 12:08:14 ConfID: 6692363 CauseID: 1557137482 OtherID: 1363323953 JT: Japanese Journal of Applied Physics MD: Kashima,50,6r,63101,2011,Effect of Ni Layer Thickness on Cu-Based {100}<001 > Textured Substrate for Coated Conductor DOI: 10.1143/JJAP.50.063101(Journal) (6692363-N) DOI: 10.7567/JJAP.50.063101(Journal) ========================================================== Created: 2023-01-05 12:08:10 ConfID: 6692360 CauseID: 1557137478 OtherID: 1363324045 JT: Japanese Journal of Applied Physics MD: Shiotani,50,6s,615,2011,Large Magnetoresistance Switching Phenomena in Nanoconduction Path Formed with Dielectric Breakdown of SiO2 Multilayered with Ferromagnetic Film DOI: 10.1143/JJAP.50.06GG15(Journal) (6692360-N) DOI: 10.7567/JJAP.50.06GG15(Journal) ========================================================== Created: 2023-01-05 12:08:13 ConfID: 6692361 CauseID: 1557137479 OtherID: 1363323165 JT: Japanese Journal of Applied Physics MD: Barborini,50,1s1,101,2011,Nanostructured Refractory Metal Oxide Films Produced by a Pulsed Microplasma Cluster Source as Active Layers in Microfabricated Gas Sensors DOI: 10.1143/JJAP.50.01AK01(Journal) (6692361-N) DOI: 10.7567/JJAP.50.01AK01(Journal) ========================================================== Created: 2023-01-05 12:08:23 ConfID: 6692374 CauseID: 1557137497 OtherID: 1363324008 JT: Japanese Journal of Applied Physics MD: Li,50,6s,609,2011,Thermal Dissipation of High-Brightness Light Emitting Diode by Using Multiwalled Carbon Nanotube/SiC Composites DOI: 10.1143/JJAP.50.06GE09(Journal) (6692374-N) DOI: 10.7567/JJAP.50.06GE09(Journal) ========================================================== Created: 2023-01-05 12:08:23 ConfID: 6692375 CauseID: 1557137499 OtherID: 1363323144 JT: Japanese Journal of Applied Physics MD: Robertson,50,1s1,101,2011,Plasma Deposition of Diamond-Like Carbon DOI: 10.1143/JJAP.50.01AF01(Journal) (6692375-N) DOI: 10.7567/JJAP.50.01AF01(Journal) ========================================================== Created: 2023-01-05 12:08:19 ConfID: 6692372 CauseID: 1557137493 OtherID: 1363324063 JT: Japanese Journal of Applied Physics MD: Yoo,50,6s,610,2011,Accurate Electronic Structures of Eu-Doped SiAlON Green Phosphor with a Semilocal Exchange–Correlation Potential DOI: 10.1143/JJAP.50.06GH10(Journal) (6692372-N) DOI: 10.7567/JJAP.50.06GH10(Journal) ========================================================== Created: 2023-01-05 12:08:19 ConfID: 6692373 CauseID: 1557137494 OtherID: 1363323918 JT: Japanese Journal of Applied Physics MD: Takei,50,6r,61301,2011,Improvement of Spatial Resolution in Raman Spectroscopy Selecting Measurement Area by Opaque Material Deposition DOI: 10.1143/JJAP.50.061301(Journal) (6692373-N) DOI: 10.7567/JJAP.50.061301(Journal) ========================================================== Created: 2023-01-05 12:08:18 ConfID: 6692370 CauseID: 1557137492 OtherID: 1363324041 JT: Japanese Journal of Applied Physics MD: Wada,50,6s,605,2011,Annealing Effect of W Incorporated Diamond-Like Carbon Fabricated by Ga Focused Ion Beam Chemical Vapor Deposition DOI: 10.1143/JJAP.50.06GG05(Journal) (6692370-N) DOI: 10.7567/JJAP.50.06GG05(Journal) ========================================================== Created: 2023-01-05 12:08:18 ConfID: 6692371 CauseID: 1557137491 OtherID: 1363323925 JT: Japanese Journal of Applied Physics MD: Lee,50,6r,62102,2011,White Organic Light-Emitting Diodes Using Red-Fluorescent and Blue-Phosphorescent Emitters with Inducer Layer DOI: 10.1143/JJAP.50.062102(Journal) (6692371-N) DOI: 10.7567/JJAP.50.062102(Journal) ========================================================== Created: 2023-01-05 12:08:17 ConfID: 6692368 CauseID: 1557137489 OtherID: 1363323109 JT: Japanese Journal of Applied Physics MD: Nakamura,50,1r,15501,2011,Formation and Magnetic Properties of Ultrahigh Density Fe3Si Nanodots Epitaxially Grown on Si(111) Substrates Covered with Ultrathin SiO2 Films DOI: 10.1143/JJAP.50.015501(Journal) (6692368-N) DOI: 10.7567/JJAP.50.015501(Journal) ========================================================== Created: 2023-01-05 12:08:17 ConfID: 6692369 CauseID: 1557137490 OtherID: 1363323071 JT: Japanese Journal of Applied Physics MD: Ohta,50,1r,10104,2011,Counter-Electrode-Free Thin Cu Film Deposition Based on Ballistic Electron Injection into CuSO4 Solution from Nanosilicon Emitter DOI: 10.1143/JJAP.50.010104(Journal) (6692369-N) DOI: 10.7567/JJAP.50.010104(Journal) ========================================================== Created: 2023-01-05 12:08:22 ConfID: 6692382 CauseID: 1557137506 OtherID: 1363324078 JT: Japanese Journal of Applied Physics MD: Kwon,50,6s,608,2011,Extended-Gate Metal Oxide Semiconductor Field Effect Transistor-Based Biosensor for Detection of Deoxynivalenol DOI: 10.1143/JJAP.50.06GL08(Journal) (6692382-N) DOI: 10.7567/JJAP.50.06GL08(Journal) ========================================================== Created: 2023-01-05 12:08:22 ConfID: 6692383 CauseID: 1557137507 OtherID: 1363323131 JT: Japanese Journal of Applied Physics MD: Takayama,50,1s1,103,2011,Extension of Binary-Collision-Approximation-Based Simulation Applicable to Any Structured Target Material DOI: 10.1143/JJAP.50.01AB03(Journal) (6692383-N) DOI: 10.7567/JJAP.50.01AB03(Journal) ========================================================== Created: 2023-01-05 12:08:21 ConfID: 6692380 CauseID: 1557137504 OtherID: 1363324091 JT: Japanese Journal of Applied Physics MD: Ukita,50,6s,613,2011,Demonstration of Three-Dimensional DNA Trapping Using Electric Force and Hydrodrag Force DOI: 10.1143/JJAP.50.06GL13(Journal) (6692380-N) DOI: 10.7567/JJAP.50.06GL13(Journal) ========================================================== Created: 2023-01-05 12:08:21 ConfID: 6692381 CauseID: 1557137505 OtherID: 1363324238 JT: Japanese Journal of Applied Physics MD: Ara,50,7s,720,2011,Examination of Sub-Grid Technique for Simulation of Sound Wave Propagation Using Constrained Interpolation Profile Method with Method of Characteristics DOI: 10.1143/JJAP.50.07HC20(Journal) (6692381-N) DOI: 10.7567/JJAP.50.07HC20(Journal) ========================================================== Created: 2023-01-05 12:08:20 ConfID: 6692378 CauseID: 1557137502 OtherID: 1363323115 JT: Japanese Journal of Applied Physics MD: Hiraiwa,50,1r,16602,2011,Image-Noise Effect on Discrete Power Spectrum of Line-Edge and Line-Width Roughness DOI: 10.1143/JJAP.50.016602(Journal) (6692378-N) DOI: 10.7567/JJAP.50.016602(Journal) ========================================================== Created: 2023-01-05 12:08:20 ConfID: 6692379 CauseID: 1557137503 OtherID: 1363324040 JT: Japanese Journal of Applied Physics MD: Huh,50,6s,602,2011,Fabrication of Metal Embedded Nano-Cones for Single Quantum Dot Emission DOI: 10.1143/JJAP.50.06GG02(Journal) (6692379-N) DOI: 10.7567/JJAP.50.06GG02(Journal) ========================================================== Created: 2023-01-05 12:08:24 ConfID: 6692376 CauseID: 1557137500 OtherID: 1363324026 JT: Japanese Journal of Applied Physics MD: Pandey,50,6s,608,2011,Investigating the Role of Dye Dipole on Open Circuit Voltage in Solid-State Dye-Sensitized Solar Cells DOI: 10.1143/JJAP.50.06GF08(Journal) (6692376-N) DOI: 10.7567/JJAP.50.06GF08(Journal) ========================================================== Created: 2023-01-05 12:08:24 ConfID: 6692377 CauseID: 1557137501 OtherID: 1363323968 JT: Japanese Journal of Applied Physics MD: Kato,50,6r,67202,2011,Experimental and Computational Analysis of Water-Droplet Formation and Ejection Process Using Hollow Microneedle DOI: 10.1143/JJAP.50.067202(Journal) (6692377-N) DOI: 10.7567/JJAP.50.067202(Journal) ========================================================== Created: 2023-01-05 12:10:12 ConfID: 6692582 CauseID: 1557137737 OtherID: 1363323253 JT: Japanese Journal of Applied Physics MD: Lee,50,1s2,104,2011,Interpretations of the Critical Indentation Depths in Soft Coatings on Hard Substrates from a Morphological Analysis on Nanocontact Impressions DOI: 10.1143/JJAP.50.01BJ04(Journal) (6692582-N) DOI: 10.7567/JJAP.50.01BJ04(Journal) ========================================================== Created: 2023-01-05 12:10:13 ConfID: 6692583 CauseID: 1557137738 OtherID: 1363324083 JT: Japanese Journal of Applied Physics MD: Terazono,50,6s,607,2011,Image-Based Identification of Single Neurons for Noninvasive Imaging Purification DOI: 10.1143/JJAP.50.06GL07(Journal) (6692583-N) DOI: 10.7567/JJAP.50.06GL07(Journal) ========================================================== Created: 2023-01-05 12:10:11 ConfID: 6692580 CauseID: 1557137735 OtherID: 1363323231 JT: Japanese Journal of Applied Physics MD: Shamekh,50,1s2,104,2011,Annealing Effects on Cathodoluminescence Properties of SiOx Films Deposited by Radio Frequency Sputtering DOI: 10.1143/JJAP.50.01BF04(Journal) (6692580-N) DOI: 10.7567/JJAP.50.01BF04(Journal) ========================================================== Created: 2023-01-05 12:10:12 ConfID: 6692581 CauseID: 1557137736 OtherID: 1363324104 JT: Japanese Journal of Applied Physics MD: Kiso,50,6s,603,2011,Microelectromechanical Systems Resonator Utilizing Torsional-to-Transverse Vibration Conversion DOI: 10.1143/JJAP.50.06GM03(Journal) (6692581-N) DOI: 10.7567/JJAP.50.06GM03(Journal) ========================================================== Created: 2023-01-05 12:10:10 ConfID: 6692578 CauseID: 1557137733 OtherID: 1363323103 JT: Japanese Journal of Applied Physics MD: Takigawa,50,1r,16503,2011,Novel Air-gap Formation Technology Using Ru Barrier Metal for Cu Interconnects with High Reliability and Low Capacitance DOI: 10.1143/JJAP.50.016503(Journal) (6692578-N) DOI: 10.7567/JJAP.50.016503(Journal) ========================================================== Created: 2023-01-05 12:10:11 ConfID: 6692579 CauseID: 1557137734 OtherID: 1363324194 JT: Japanese Journal of Applied Physics MD: Kozawa,50,7r,76505,2011,Effect of Acid Generator Decomposition during Exposure on Acid Image Quality of Chemically Amplified Extreme Ultraviolet Resists DOI: 10.1143/JJAP.50.076505(Journal) (6692579-N) DOI: 10.7567/JJAP.50.076505(Journal) ========================================================== Created: 2023-01-05 12:10:07 ConfID: 6692576 CauseID: 1557137728 OtherID: 1363323257 JT: Japanese Journal of Applied Physics MD: Abe,50,1s2,102,2011,Density Functional Theory Study on the Water Clusters on Graphene Chip DOI: 10.1143/JJAP.50.01BJ02(Journal) (6692576-N) DOI: 10.7567/JJAP.50.01BJ02(Journal) ========================================================== Created: 2023-01-05 12:10:08 ConfID: 6692577 CauseID: 1557137729 OtherID: 1363324302 JT: Japanese Journal of Applied Physics MD: Yano,50,7s,729,2011,Novel Transfer Method Using Near-Field Acoustic Levitation and Its Application DOI: 10.1143/JJAP.50.07HE29(Journal) (6692577-N) DOI: 10.7567/JJAP.50.07HE29(Journal) ========================================================== Created: 2023-01-05 12:10:17 ConfID: 6692590 CauseID: 1557137749 OtherID: 1363324049 JT: Japanese Journal of Applied Physics MD: Huda,50,6s,606,2011,Fabrication of 10-nm-Order Block Copolymer Self-Assembled Nanodots for High-Density Magnetic Recording DOI: 10.1143/JJAP.50.06GG06(Journal) (6692590-N) DOI: 10.7567/JJAP.50.06GG06(Journal) ========================================================== Created: 2023-01-05 12:10:18 ConfID: 6692591 CauseID: 1557137750 OtherID: 1363324232 JT: Japanese Journal of Applied Physics MD: Tamura,50,7s,715,2011,A Method for Estimating the Location of the Drill-Bit During Horizontal Directional Drilling Using a Giant-Magnetostrictive Vibrator DOI: 10.1143/JJAP.50.07HC15(Journal) (6692591-N) DOI: 10.7567/JJAP.50.07HC15(Journal) ========================================================== Created: 2023-01-05 12:10:16 ConfID: 6692588 CauseID: 1557137747 OtherID: 1363324035 JT: Japanese Journal of Applied Physics MD: Kim,50,6s,606,2011,Enhanced Optical and Electrical Properties of Inorganic Electroluminescent Devices Using the Top-Emission Structure DOI: 10.1143/JJAP.50.06GF06(Journal) (6692588-N) DOI: 10.7567/JJAP.50.06GF06(Journal) ========================================================== Created: 2023-01-05 12:10:17 ConfID: 6692589 CauseID: 1557137748 OtherID: 1363324029 JT: Japanese Journal of Applied Physics MD: Pauliac-Vaujour,50,6s,615,2011,Patterning Strategy for Monoelectronic Device Platform in a Complementary Metal Oxide Semiconductor Technology DOI: 10.1143/JJAP.50.06GF15(Journal) (6692589-N) DOI: 10.7567/JJAP.50.06GF15(Journal) ========================================================== Created: 2023-01-05 12:10:15 ConfID: 6692586 CauseID: 1557137745 OtherID: 1363324210 JT: Japanese Journal of Applied Physics MD: Tarumi,50,7s,702,2011,Numerical Analysis for Acoustic Resonance of One-Dimensional Nonlinear Elastic Bar DOI: 10.1143/JJAP.50.07HB02(Journal) (6692586-N) DOI: 10.7567/JJAP.50.07HB02(Journal) ========================================================== Created: 2023-01-05 12:10:16 ConfID: 6692587 CauseID: 1557137746 OtherID: 1363324169 JT: Japanese Journal of Applied Physics MD: Wang,50,7r,72501,2011,Analysis of Polarization-Fluctuation Induced Bias Error in Resonator Fiber Optic Gyro with Twin 90° Polarization-Axis Rotated Splices DOI: 10.1143/JJAP.50.072501(Journal) (6692587-N) DOI: 10.7567/JJAP.50.072501(Journal) ========================================================== Created: 2023-01-05 12:10:14 ConfID: 6692584 CauseID: 1557137740 OtherID: 1363324033 JT: Japanese Journal of Applied Physics MD: Naitoh,50,6s,610,2011,Physical Model for High-to-Low Resistive Switching of Gold Nanogap Junction DOI: 10.1143/JJAP.50.06GF10(Journal) (6692584-N) DOI: 10.7567/JJAP.50.06GF10(Journal) ========================================================== Created: 2023-01-05 12:10:15 ConfID: 6692585 CauseID: 1557137744 OtherID: 1363325475 JT: Japanese Journal of Applied Physics MD: Nomura,50,3r,31201,2011,Photopumped Lasing Characteristics in Green-to-Yellow Range for BeZnSeTe II–VI Compound Quaternary Double Heterostructures Grown on InP Substrates DOI: 10.1143/JJAP.50.031201(Journal) (6692585-N) DOI: 10.7567/JJAP.50.031201(Journal) ========================================================== Created: 2023-01-05 12:10:22 ConfID: 6692598 CauseID: 1557137762 OtherID: 1363324173 JT: Japanese Journal of Applied Physics MD: Hu,50,7r,72002,2011,Variation in the Absolute Photonic Band Gap of Rods Ranging from Square to Octagonal in Square Lattices DOI: 10.1143/JJAP.50.072002(Journal) (6692598-N) DOI: 10.7567/JJAP.50.072002(Journal) ========================================================== Created: 2023-01-05 12:10:23 ConfID: 6692599 CauseID: 1557137763 OtherID: 1363324024 JT: Japanese Journal of Applied Physics MD: Wang,50,6s,612,2011,Nickel Nanocrystals Embedded in Metal–Alumina–Nitride–Oxide–Silicon Type Low-Temperature Polycrystalline-Silicon Thin-Film Transistor for Low-Voltage Nonvolatile Memory Application DOI: 10.1143/JJAP.50.06GF12(Journal) (6692599-N) DOI: 10.7567/JJAP.50.06GF12(Journal) ========================================================== Created: 2023-01-05 12:10:21 ConfID: 6692596 CauseID: 1557137759 OtherID: 1363324247 JT: Japanese Journal of Applied Physics MD: Terada,50,7s,704,2011,Construction of Acceleration Sensor Using a Coupled Vibrator DOI: 10.1143/JJAP.50.07HC04(Journal) (6692596-N) DOI: 10.7567/JJAP.50.07HC04(Journal) ========================================================== Created: 2023-01-05 12:10:22 ConfID: 6692597 CauseID: 1557137761 OtherID: 1363323186 JT: Japanese Journal of Applied Physics MD: Okawa,50,1s2,111,2011,Enhancement of Electron Injection in Organic Light-Emitting Diodes with Photosensitive Charge Generation Layer DOI: 10.1143/JJAP.50.01BC11(Journal) (6692597-N) DOI: 10.7567/JJAP.50.01BC11(Journal) ========================================================== Created: 2023-01-05 12:10:20 ConfID: 6692594 CauseID: 1557137756 OtherID: 1363323262 JT: Japanese Journal of Applied Physics MD: Terasako,50,1s2,115,2011,Various Shapes of ZnO and CdO Nanostructures Grown by Atmospheric-Pressure Chemical Vapor Deposition DOI: 10.1143/JJAP.50.01BJ15(Journal) (6692594-N) DOI: 10.7567/JJAP.50.01BJ15(Journal) ========================================================== Created: 2023-01-05 12:10:20 ConfID: 6692595 CauseID: 1557137758 OtherID: 1363323254 JT: Japanese Journal of Applied Physics MD: Pavasupree,50,1s2,116,2011,Fabrication and Utilization of Titania Nanofibers from Natural Leucoxene Mineral in Photovoltaic Applications DOI: 10.1143/JJAP.50.01BJ16(Journal) (6692595-N) DOI: 10.7567/JJAP.50.01BJ16(Journal) ========================================================== Created: 2023-01-05 12:10:18 ConfID: 6692592 CauseID: 1557137751 OtherID: 1363323118 JT: Japanese Journal of Applied Physics MD: Lee,50,1s1,106,2011,Low-Temperature Solid Phase Epitaxial Regrowth of Silicon for Stacked Static Random Memory Application DOI: 10.1143/JJAP.50.01AB06(Journal) (6692592-N) DOI: 10.7567/JJAP.50.01AB06(Journal) ========================================================== Created: 2023-01-05 12:10:19 ConfID: 6692593 CauseID: 1557137753 OtherID: 1363323203 JT: Japanese Journal of Applied Physics MD: Choi,50,1s2,107,2011,Atomic-Scale Investigation on the Ti/Fe(001) Interface Structure: Molecular Dynamics Simulations and Ab initio Calculations DOI: 10.1143/JJAP.50.01BE07(Journal) (6692593-N) DOI: 10.7567/JJAP.50.01BE07(Journal) ========================================================== Created: 2023-01-05 12:10:29 ConfID: 6692606 CauseID: 1557137771 OtherID: 1363323412 JT: Japanese Journal of Applied Physics MD: Guan,50,3r,32703,2011,Numerical Study on Depth Gauging of Surface Breaking Defects Using Laser-Generated Surface Acoustic Waves DOI: 10.1143/JJAP.50.032703(Journal) (6692606-N) DOI: 10.7567/JJAP.50.032703(Journal) ========================================================== Created: 2023-01-05 12:10:25 ConfID: 6692607 CauseID: 1557137772 OtherID: 1363324231 JT: Japanese Journal of Applied Physics MD: Omura,50,7s,707,2011,Quantitative Measurement of Focused Ultrasound Pressure Field Using Subtraction Shadowgraph DOI: 10.1143/JJAP.50.07HC07(Journal) (6692607-N) DOI: 10.7567/JJAP.50.07HC07(Journal) ========================================================== Created: 2023-01-05 12:10:28 ConfID: 6692604 CauseID: 1557137767 OtherID: 1363323251 JT: Japanese Journal of Applied Physics MD: Suzuki,50,1s2,110,2011,Study of Carbon-Nanotube Web Thermoacoustic Loud Speakers DOI: 10.1143/JJAP.50.01BJ10(Journal) (6692604-N) DOI: 10.7567/JJAP.50.01BJ10(Journal) ========================================================== Created: 2023-01-05 12:10:28 ConfID: 6692605 CauseID: 1557137770 OtherID: 1363324064 JT: Japanese Journal of Applied Physics MD: Kobayashi,50,6s,602,2011,Fluorescent Microscopy Proving Resin Adhesion to a Fluorinated Mold Surface Suppressed by Pentafluoropropane in Step-and-Repeat Ultraviolet Nanoimprinting DOI: 10.1143/JJAP.50.06GK02(Journal) (6692605-N) DOI: 10.7567/JJAP.50.06GK02(Journal) ========================================================== Created: 2023-01-05 12:10:24 ConfID: 6692602 CauseID: 1557137765 OtherID: 1363323242 JT: Japanese Journal of Applied Physics MD: Alias,50,1s2,105,2011,Fabrication of ZnO Thin-Film Transistors by Chemical Vapor Deposition Method using Zinc Acetate Solution DOI: 10.1143/JJAP.50.01BG05(Journal) (6692602-N) DOI: 10.7567/JJAP.50.01BG05(Journal) ========================================================== Created: 2023-01-05 12:10:24 ConfID: 6692603 CauseID: 1557137766 OtherID: 1363324131 JT: Japanese Journal of Applied Physics MD: Park,50,7r,70201,2011,Low-Temperature, Aqueous-Solution-Processed Zinc Tin Oxide Thin Film Transistor DOI: 10.1143/JJAP.50.070201(Journal) (6692603-N) DOI: 10.7567/JJAP.50.070201(Journal) ========================================================== Created: 2023-01-05 12:10:23 ConfID: 6692600 CauseID: 1557137764 OtherID: 1363323145 JT: Japanese Journal of Applied Physics MD: Wang,50,1s1,102,2011,In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN DOI: 10.1143/JJAP.50.01AE02(Journal) (6692600-N) DOI: 10.7567/JJAP.50.01AE02(Journal) ========================================================== Created: 2023-01-05 12:09:55 ConfID: 6692550 CauseID: 1557137698 OtherID: 1363323345 JT: Japanese Journal of Applied Physics MD: Subramaniyam,50,3r,30201,2011,Inhomogeneous Barrier Height Analysis of (Ni/Au)–InAlGaN/GaN Schottky Barrier Diode DOI: 10.1143/JJAP.50.030201(Journal) (6692550-N) DOI: 10.7567/JJAP.50.030201(Journal) ========================================================== Created: 2023-01-05 12:09:55 ConfID: 6692551 CauseID: 1557137699 OtherID: 1363324052 JT: Japanese Journal of Applied Physics MD: Matsutani,50,6s,607,2011,Inductively Coupled Plasma Etching of Silicon Using Solid Iodine as an Etching Gas Source DOI: 10.1143/JJAP.50.06GG07(Journal) (6692551-N) DOI: 10.7567/JJAP.50.06GG07(Journal) ========================================================== Created: 2023-01-05 12:09:54 ConfID: 6692548 CauseID: 1557137694 OtherID: 1363323240 JT: Japanese Journal of Applied Physics MD: Deehasing,50,1s2,106,2011,Influence of Cation Dopants in the A-Site on the Crystal Structure, Microstructure, and Electrical Conductivity of Ba0.5Sr0.5Co0.8Fe0.2O3-δ as a New Solid-Oxide-Fuel-Cell Cathode DOI: 10.1143/JJAP.50.01BF06(Journal) (6692548-N) DOI: 10.7567/JJAP.50.01BF06(Journal) ========================================================== Created: 2023-01-05 12:09:54 ConfID: 6692549 CauseID: 1557137695 OtherID: 1363323246 JT: Japanese Journal of Applied Physics MD: Chathirat,50,1s2,101,2011,A Micrograting Sensor for DNA Hybridization and Antibody Human Serum Albumin–Antigen Human Serum Albumin Interaction Experiments DOI: 10.1143/JJAP.50.01BK01(Journal) (6692549-N) DOI: 10.7567/JJAP.50.01BK01(Journal) ========================================================== Created: 2023-01-05 12:09:52 ConfID: 6692546 CauseID: 1557137691 OtherID: 1363323105 JT: Japanese Journal of Applied Physics MD: Kim,50,1r,16505,2011,Effect of Rinse Process on Removal of Crown Type Defects during Photoresist Development DOI: 10.1143/JJAP.50.016505(Journal) (6692546-N) DOI: 10.7567/JJAP.50.016505(Journal) ========================================================== Created: 2023-01-05 12:09:52 ConfID: 6692547 CauseID: 1557137692 OtherID: 1363324132 JT: Japanese Journal of Applied Physics MD: Moutaouakil,50,7r,70113,2011,Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device DOI: 10.1143/JJAP.50.070113(Journal) (6692547-N) DOI: 10.7567/JJAP.50.070113(Journal) ========================================================== Created: 2023-01-05 12:09:51 ConfID: 6692544 CauseID: 1557137689 OtherID: 1363324093 JT: Japanese Journal of Applied Physics MD: Hayashi,50,6s,603,2011,Continuous Concentration and Separation of Microparticles Using Dielectrophoretic Force in a V-Shaped Electrode Array DOI: 10.1143/JJAP.50.06GL03(Journal) (6692544-N) DOI: 10.7567/JJAP.50.06GL03(Journal) ========================================================== Created: 2023-01-05 12:09:51 ConfID: 6692545 CauseID: 1557137690 OtherID: 1363324000 JT: Japanese Journal of Applied Physics MD: Chang,50,6s,608,2011,Flexible Sensing Arrays Fabricated with Carbon Nanofiber Composite Thin Films for Posture Monitoring DOI: 10.1143/JJAP.50.06GE08(Journal) (6692545-N) DOI: 10.7567/JJAP.50.06GE08(Journal) ========================================================== Created: 2023-01-05 12:09:59 ConfID: 6692558 CauseID: 1557137706 OtherID: 1363324107 JT: Japanese Journal of Applied Physics MD: Suzuki,50,6s,612,2011,Resistance Formed in Thermoplastic Resin Substrate by Laser-Assisted Micro Powder Jet Implantation DOI: 10.1143/JJAP.50.06GM12(Journal) (6692558-N) DOI: 10.7567/JJAP.50.06GM12(Journal) ========================================================== Created: 2023-01-05 12:09:59 ConfID: 6692559 CauseID: 1557137707 OtherID: 1363324183 JT: Japanese Journal of Applied Physics MD: Yasui,50,7r,72502,2011,Polarization-Sensitive Reading Method for High-Density Optical Data Storage DOI: 10.1143/JJAP.50.072502(Journal) (6692559-N) DOI: 10.7567/JJAP.50.072502(Journal) ========================================================== Created: 2023-01-05 12:09:58 ConfID: 6692556 CauseID: 1557137704 OtherID: 1363323126 JT: Japanese Journal of Applied Physics MD: Hsieh,50,1s1,105,2011,Synthesis of Tungsten Oxide Nanoslab Bundles by Microwave Plasma-Enhanced Chemical Vapor Deposition DOI: 10.1143/JJAP.50.01AB05(Journal) (6692556-N) DOI: 10.7567/JJAP.50.01AB05(Journal) ========================================================== Created: 2023-01-05 12:09:58 ConfID: 6692557 CauseID: 1557137705 OtherID: 1363324039 JT: Japanese Journal of Applied Physics MD: Cha,50,6s,612,2011,Nanofabrication of Nickel Stamp for Replication of Polymer Multilevel Nanolens Arrays via Modified Two-Step Anodization Process DOI: 10.1143/JJAP.50.06GG12(Journal) (6692557-N) DOI: 10.7567/JJAP.50.06GG12(Journal) ========================================================== Created: 2023-01-05 12:09:57 ConfID: 6692554 CauseID: 1557137702 OtherID: 1363323099 JT: Japanese Journal of Applied Physics MD: Ishii,50,1r,15102,2011,Thin Single-Walled Carbon Nanotubes with Narrow Diameter Distribution Grown by Cold-Wall Chemical Vapor Deposition Combined with Co Nanoparticle Deposition DOI: 10.1143/JJAP.50.015102(Journal) (6692554-N) DOI: 10.7567/JJAP.50.015102(Journal) ========================================================== Created: 2023-01-05 12:09:57 ConfID: 6692555 CauseID: 1557137703 OtherID: 1363324170 JT: Japanese Journal of Applied Physics MD: Nguyen,50,7r,71602,2011,Calamitic Smectic A–Polar Smectic APA Transition Observed in Bent Molecules with Large Bent-Angle Central Core of 4,6-Dichlorobenzene and Alkylthio Terminal Tail DOI: 10.1143/JJAP.50.071602(Journal) (6692555-N) DOI: 10.7567/JJAP.50.071602(Journal) ========================================================== Created: 2023-01-05 12:09:56 ConfID: 6692552 CauseID: 1557137700 OtherID: 1363324179 JT: Japanese Journal of Applied Physics MD: Kato,50,7r,71604,2011,Efficient Organic Photovoltaic Cells Using Hole-Transporting MoO3 Buffer Layers Converted from Solution-Processed MoS2 Films DOI: 10.1143/JJAP.50.071604(Journal) (6692552-N) DOI: 10.7567/JJAP.50.071604(Journal) ========================================================== Created: 2023-01-05 12:09:56 ConfID: 6692553 CauseID: 1557137701 OtherID: 1363324106 JT: Japanese Journal of Applied Physics MD: Hung,50,6s,607,2011,Torsion Fatigue Testing of Polycrystalline Silicon Cross-Microbridge Structures DOI: 10.1143/JJAP.50.06GM07(Journal) (6692553-N) DOI: 10.7567/JJAP.50.06GM07(Journal) ========================================================== Created: 2023-01-05 12:10:01 ConfID: 6692566 CauseID: 1557137716 OtherID: 1363323211 JT: Japanese Journal of Applied Physics MD: Hong,50,1s2,109,2011,Preparation of Scandia-Stabilized Zirconia Electrolyte Thin Films for Intermediate Temperature-Solid Oxide Fuel Cells by Electron Beam Vapor Deposition DOI: 10.1143/JJAP.50.01BE09(Journal) (6692566-N) DOI: 10.7567/JJAP.50.01BE09(Journal) ========================================================== Created: 2023-01-05 12:10:02 ConfID: 6692567 CauseID: 1557137717 OtherID: 1363324125 JT: Japanese Journal of Applied Physics MD: Takatsuka,50,7r,70118,2011,Terahertz Amplifiers based on Multiple Graphene Layer with Field-Enhancement Effect DOI: 10.1143/JJAP.50.070118(Journal) (6692567-N) DOI: 10.7567/JJAP.50.070118(Journal) ========================================================== Created: 2023-01-05 12:10:00 ConfID: 6692564 CauseID: 1557137714 OtherID: 1363324251 JT: Japanese Journal of Applied Physics MD: Takayama,50,7s,712,2011,Study of Relationship between Layer Profile of SiO2 and Characteristics of Surface Acoustic Wave Devices in SiO2/Al/LiTaO3 System DOI: 10.1143/JJAP.50.07HD12(Journal) (6692564-N) DOI: 10.7567/JJAP.50.07HD12(Journal) ========================================================== Created: 2023-01-05 12:10:01 ConfID: 6692565 CauseID: 1557137715 OtherID: 1363323122 JT: Japanese Journal of Applied Physics MD: Nakano,50,1s1,102,2011,Deep-Level Characterization of n-GaN Epitaxial Layers Using Transparent Conductive Polyaniline Schottky Contacts DOI: 10.1143/JJAP.50.01AD02(Journal) (6692565-N) DOI: 10.7567/JJAP.50.01AD02(Journal) ========================================================== Created: 2023-01-05 12:10:04 ConfID: 6692562 CauseID: 1557137712 OtherID: 1363324208 JT: Japanese Journal of Applied Physics MD: Miyake,50,7r,78002,2011,Nanoimprint Fabrication and Thermal Behavior of Atomically Ultrasmooth Glass Substrates with 0.2-nm-Height Steps DOI: 10.1143/JJAP.50.078002(Journal) (6692562-N) DOI: 10.7567/JJAP.50.078002(Journal) ========================================================== Created: 2023-01-05 12:10:00 ConfID: 6692563 CauseID: 1557137713 OtherID: 1363324171 JT: Japanese Journal of Applied Physics MD: Yasumune,50,7r,72201,2011,Measurement of Output Signals from an Avalanche Photodiode by Irradiating with X-rays in the Temperature Range from 150 mK to 4.2 K DOI: 10.1143/JJAP.50.072201(Journal) (6692563-N) DOI: 10.7567/JJAP.50.072201(Journal) ========================================================== Created: 2023-01-05 12:10:03 ConfID: 6692560 CauseID: 1557137709 OtherID: 1363323212 JT: Japanese Journal of Applied Physics MD: Kawakami,50,1s2,102,2011,Effect of Dielectric Barrier Discharge Air Plasma Treatment on TiO2 Thin Film Surfaces DOI: 10.1143/JJAP.50.01BE02(Journal) (6692560-N) DOI: 10.7567/JJAP.50.01BE02(Journal) ========================================================== Created: 2023-01-05 12:10:03 ConfID: 6692561 CauseID: 1557137710 OtherID: 1363324226 JT: Japanese Journal of Applied Physics MD: Miyazaki,50,7s,707,2011,Characterization of LiNbO3 Single-Crystal Substrates Irradiated with Electrons DOI: 10.1143/JJAP.50.07HB07(Journal) (6692561-N) DOI: 10.7567/JJAP.50.07HB07(Journal) ========================================================== Created: 2023-01-05 12:10:06 ConfID: 6692574 CauseID: 1557137725 OtherID: 1363324100 JT: Japanese Journal of Applied Physics MD: Komatsuzaki,50,6s,609,2011,Flexible Polyimide Micropump Fabricated Using Hot Embossing DOI: 10.1143/JJAP.50.06GM09(Journal) (6692574-N) DOI: 10.7567/JJAP.50.06GM09(Journal) ========================================================== Created: 2023-01-05 12:10:07 ConfID: 6692575 CauseID: 1557137727 OtherID: 1363323230 JT: Japanese Journal of Applied Physics MD: Fujimoto,50,1s2,104,2011,Scintillation Characteristic of In,Ga-Doped ZnO Thin Films with Different Dopant Concentrations DOI: 10.1143/JJAP.50.01BG04(Journal) (6692575-N) DOI: 10.7567/JJAP.50.01BG04(Journal) ========================================================== Created: 2023-01-05 12:10:09 ConfID: 6692572 CauseID: 1557137723 OtherID: 1363324120 JT: Japanese Journal of Applied Physics MD: Acik,50,7r,70101,2011,Nature of Graphene Edges: A Review DOI: 10.1143/JJAP.50.070101(Journal) (6692572-N) DOI: 10.7567/JJAP.50.070101(Journal) ========================================================== Created: 2023-01-05 12:10:06 ConfID: 6692573 CauseID: 1557137724 OtherID: 1363324219 JT: Japanese Journal of Applied Physics MD: Hsu,50,7s,701,2011,Low-Frequency Forbidden Bands in Phononic Crystal Plates with Helmholtz Resonators DOI: 10.1143/JJAP.50.07HB01(Journal) (6692573-N) DOI: 10.7567/JJAP.50.07HB01(Journal) ========================================================== Created: 2023-01-05 12:10:08 ConfID: 6692570 CauseID: 1557137721 OtherID: 1363324266 JT: Japanese Journal of Applied Physics MD: Shiiba,50,7s,702,2011,Estimation of Cavitation Sensor with Hydrothermally Synthesized Lead Zirconate Titanate Film on Titanium Cylindrical Pipe: Spatial Distribution of Acoustic Cavitation Field and Basic Characteristics of Cavitation Sensor DOI: 10.1143/JJAP.50.07HE02(Journal) (6692570-N) DOI: 10.7567/JJAP.50.07HE02(Journal) ========================================================== Created: 2023-01-05 12:10:09 ConfID: 6692571 CauseID: 1557137722 OtherID: 1363323449 JT: Japanese Journal of Applied Physics MD: Ogiwara,50,3r,36101,2011,Lamb-Dip Laser-Induced Fluorescence Spectroscopy for Measuring Magnetic Field in a Plasma DOI: 10.1143/JJAP.50.036101(Journal) (6692571-N) DOI: 10.7567/JJAP.50.036101(Journal) ========================================================== Created: 2023-01-05 12:10:02 ConfID: 6692568 CauseID: 1557137718 OtherID: 1363323098 JT: Japanese Journal of Applied Physics MD: Kang,50,1r,16701,2011,Novel Modeling of Correlation between Two-Dimensional Registers in Large-Area Multilayered Roll-to-Roll Printed Electronics DOI: 10.1143/JJAP.50.016701(Journal) (6692568-N) DOI: 10.7567/JJAP.50.016701(Journal) ========================================================== Created: 2023-01-05 12:10:05 ConfID: 6692569 CauseID: 1557137720 OtherID: 1363324139 JT: Japanese Journal of Applied Physics MD: Nagashio,50,7r,70108,2011,Density-of-States Limited Contact Resistance in Graphene Field-Effect Transistors DOI: 10.1143/JJAP.50.070108(Journal) (6692569-N) DOI: 10.7567/JJAP.50.070108(Journal) ========================================================== Created: 2023-01-05 12:09:39 ConfID: 6692518 CauseID: 1557137657 OtherID: 1363323210 JT: Japanese Journal of Applied Physics MD: Suzuki,50,1s2,118,2011,Preparation and Characterization of Cr–Zn–N–O Thin Films Deposited by Pulsed Laser Deposition DOI: 10.1143/JJAP.50.01BE18(Journal) (6692518-N) DOI: 10.7567/JJAP.50.01BE18(Journal) ========================================================== Created: 2023-01-05 12:09:35 ConfID: 6692519 CauseID: 1557137658 OtherID: 1363323084 JT: Japanese Journal of Applied Physics MD: Saito,50,1r,14102,2011,Vertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with High Current Density DOI: 10.1143/JJAP.50.014102(Journal) (6692519-N) DOI: 10.7567/JJAP.50.014102(Journal) ========================================================== Created: 2023-01-05 12:09:35 ConfID: 6692516 CauseID: 1557137654 OtherID: 1363324001 JT: Japanese Journal of Applied Physics MD: Konishi,50,6s,613,2011,Fabrication of p–n–p Graphene Structure and Observation of Current Oscillation DOI: 10.1143/JJAP.50.06GE13(Journal) (6692516-N) DOI: 10.7567/JJAP.50.06GE13(Journal) ========================================================== Created: 2023-01-05 12:09:39 ConfID: 6692517 CauseID: 1557137656 OtherID: 1363324090 JT: Japanese Journal of Applied Physics MD: Torii,50,6s,615,2011,Three-Dimensional Molding Based on Microstereolithography Using Beta-Tricalcium Phosphate Slurry for the Production of Bioceramic Scaffolds DOI: 10.1143/JJAP.50.06GL15(Journal) (6692517-N) DOI: 10.7567/JJAP.50.06GL15(Journal) ========================================================== Created: 2023-01-05 12:09:34 ConfID: 6692514 CauseID: 1557137651 OtherID: 1363323350 JT: Japanese Journal of Applied Physics MD: Fellmann,50,3r,31001,2011,Ternary AlGaN Alloys with High Al Content and Enhanced Compositional Homogeneity Grown by Plasma-Assisted Molecular Beam Epitaxy DOI: 10.1143/JJAP.50.031001(Journal) (6692514-N) DOI: 10.7567/JJAP.50.031001(Journal) ========================================================== Created: 2023-01-05 12:09:34 ConfID: 6692515 CauseID: 1557137652 OtherID: 1363324061 JT: Japanese Journal of Applied Physics MD: Tsuji,50,6s,606,2011,Highly Uniform Fabrication of Diffraction Gratings for Distributed Feedback Laser Diodes by Nanoimprint Lithography DOI: 10.1143/JJAP.50.06GK06(Journal) (6692515-N) DOI: 10.7567/JJAP.50.06GK06(Journal) ========================================================== Created: 2023-01-05 12:09:33 ConfID: 6692512 CauseID: 1557137649 OtherID: 1363324190 JT: Japanese Journal of Applied Physics MD: Ha,50,7r,75001,2011,Study on the Electrical and Thermal Conductivity of Ordered Mesoporous TiO2 Thin Film Incorporated with Pt Nanoparticles DOI: 10.1143/JJAP.50.075001(Journal) (6692512-N) DOI: 10.7567/JJAP.50.075001(Journal) ========================================================== Created: 2023-01-05 12:09:33 ConfID: 6692513 CauseID: 1557137650 OtherID: 1363324235 JT: Japanese Journal of Applied Physics MD: Nakamura,50,7s,717,2011,Detection of Shear Horizontal Guided Waves Propagating in Aluminum Plate with Thinning Region DOI: 10.1143/JJAP.50.07HC17(Journal) (6692513-N) DOI: 10.7567/JJAP.50.07HC17(Journal) ========================================================== Created: 2023-01-05 12:09:44 ConfID: 6692526 CauseID: 1557137668 OtherID: 1363323083 JT: Japanese Journal of Applied Physics MD: Ikeda,50,1r,14301,2011,Pinch-Off Voltage Lowering in Polycrystalline Silicon Thin-Film Transistors DOI: 10.1143/JJAP.50.014301(Journal) (6692526-N) DOI: 10.7567/JJAP.50.014301(Journal) ========================================================== Created: 2023-01-05 12:09:44 ConfID: 6692527 CauseID: 1557137669 OtherID: 1363324152 JT: Japanese Journal of Applied Physics MD: Yoshida,50,7r,70209,2011,Modification of Surface State Density Distribution of p-InP Surfaces by Nitrogen Radical Exposure DOI: 10.1143/JJAP.50.070209(Journal) (6692527-N) DOI: 10.7567/JJAP.50.070209(Journal) ========================================================== Created: 2023-01-05 12:09:40 ConfID: 6692524 CauseID: 1557137666 OtherID: 1363323263 JT: Japanese Journal of Applied Physics MD: Nakagawa,50,1s2,109,2011,Interfacial-Force-Controlled Placing Technique of Microstructures of Sub- to One Hundred Micrometer Size Using Blade Coating DOI: 10.1143/JJAP.50.01BJ09(Journal) (6692524-N) DOI: 10.7567/JJAP.50.01BJ09(Journal) ========================================================== Created: 2023-01-05 12:09:43 ConfID: 6692525 CauseID: 1557137667 OtherID: 1363324088 JT: Japanese Journal of Applied Physics MD: Kim,50,6s,605,2011,Fabrication of Microfluidic Platform with Optimized Fluidic Network toward On-Chip Parallel Systematic Evolution of Ligands by Exponential Enrichment Process DOI: 10.1143/JJAP.50.06GL05(Journal) (6692525-N) DOI: 10.7567/JJAP.50.06GL05(Journal) ========================================================== Created: 2023-01-05 12:09:37 ConfID: 6692522 CauseID: 1557137661 OtherID: 1363324129 JT: Japanese Journal of Applied Physics MD: Ryzhii,50,7r,70117,2011,Characteristics of p–i–n Terahertz and Infrared Photodiodes Based on Multiple Graphene Layer Structures DOI: 10.1143/JJAP.50.070117(Journal) (6692522-N) DOI: 10.7567/JJAP.50.070117(Journal) ========================================================== Created: 2023-01-05 12:09:38 ConfID: 6692523 CauseID: 1557137662 OtherID: 1363324011 JT: Japanese Journal of Applied Physics MD: Negishi,50,6s,604,2011,Thickness Control of Graphene Overlayer via Layer-by-Layer Growth on Graphene Templates by Chemical Vapor Deposition DOI: 10.1143/JJAP.50.06GE04(Journal) (6692523-N) DOI: 10.7567/JJAP.50.06GE04(Journal) ========================================================== Created: 2023-01-05 12:09:36 ConfID: 6692520 CauseID: 1557137659 OtherID: 1363324084 JT: Japanese Journal of Applied Physics MD: Kim,50,6s,604,2011,Hydrophilicity of Surfactant-Added Poly(dimethylsiloxane) and Its Applications DOI: 10.1143/JJAP.50.06GL04(Journal) (6692520-N) DOI: 10.7567/JJAP.50.06GL04(Journal) ========================================================== Created: 2023-01-05 12:09:37 ConfID: 6692521 CauseID: 1557137660 OtherID: 1363324196 JT: Japanese Journal of Applied Physics MD: Yao,50,7r,75502,2011,Molten KOH Etching with Na2O2 Additive for Dislocation Revelation in 4H-SiC Epilayers and Substrates DOI: 10.1143/JJAP.50.075502(Journal) (6692521-N) DOI: 10.7567/JJAP.50.075502(Journal) ========================================================== Created: 2023-01-05 12:09:46 ConfID: 6692534 CauseID: 1557137679 OtherID: 1363323213 JT: Japanese Journal of Applied Physics MD: Zhao,50,1s2,108,2011,Surface Electronic Properties of Discontinuous Pd Films during Hydrogen Exposure DOI: 10.1143/JJAP.50.01BE08(Journal) (6692534-N) DOI: 10.7567/JJAP.50.01BE08(Journal) ========================================================== Created: 2023-01-05 12:09:46 ConfID: 6692535 CauseID: 1557137680 OtherID: 1363324102 JT: Japanese Journal of Applied Physics MD: Sohgawa,50,6s,608,2011,Crosstalk Reduction of Tactile Sensor Array with Projected Cylindrical Elastomer over Sensing Element DOI: 10.1143/JJAP.50.06GM08(Journal) (6692535-N) DOI: 10.7567/JJAP.50.06GM08(Journal) ========================================================== Created: 2023-01-05 12:09:43 ConfID: 6692532 CauseID: 1557137674 OtherID: 1363324178 JT: Japanese Journal of Applied Physics MD: Lim,50,7r,72504,2011,High-Resolution Soft X-ray Digital In-Line Holographic Microscopy DOI: 10.1143/JJAP.50.072504(Journal) (6692532-N) DOI: 10.7567/JJAP.50.072504(Journal) ========================================================== Created: 2023-01-05 12:09:45 ConfID: 6692533 CauseID: 1557137678 OtherID: 1363324036 JT: Japanese Journal of Applied Physics MD: Ishikura,50,6s,619,2011,Thermal Stability of Pd Gate in Pseudomorphic InGaAs Heterostructures DOI: 10.1143/JJAP.50.06GF19(Journal) (6692533-N) DOI: 10.7567/JJAP.50.06GF19(Journal) ========================================================== Created: 2023-01-05 12:09:42 ConfID: 6692530 CauseID: 1557137672 OtherID: 1363323200 JT: Japanese Journal of Applied Physics MD: Lee,50,1s2,101,2011,Mesitylene-Solvated Monolayers by Thermal Hydrosilylation DOI: 10.1143/JJAP.50.01BD01(Journal) (6692530-N) DOI: 10.7567/JJAP.50.01BD01(Journal) ========================================================== Created: 2023-01-05 12:09:42 ConfID: 6692531 CauseID: 1557137673 OtherID: 1363324202 JT: Japanese Journal of Applied Physics MD: Kim,50,7r,74301,2011,Decrease in Interference Effects between Cells for Metal–Oxide–Nitride–Oxide–Silicon NAND Flash Memory Devices with Metal Spacer Layers DOI: 10.1143/JJAP.50.074301(Journal) (6692531-N) DOI: 10.7567/JJAP.50.074301(Journal) ========================================================== Created: 2023-01-05 12:09:40 ConfID: 6692528 CauseID: 1557137670 OtherID: 1363324003 JT: Japanese Journal of Applied Physics MD: Venugopal,50,6s,606,2011,Fabrication and Characteristics of Nanoscale Stacked-Tunneling-Junctions on Graphite Flake Using Focused Ion Beam DOI: 10.1143/JJAP.50.06GE06(Journal) (6692528-N) DOI: 10.7567/JJAP.50.06GE06(Journal) ========================================================== Created: 2023-01-05 12:09:41 ConfID: 6692529 CauseID: 1557137671 OtherID: 1363323112 JT: Japanese Journal of Applied Physics MD: Kozawa,50,1r,16504,2011,Backexposure Effect in Chemically Amplified Resist Process upon Exposure to Extreme Ultraviolet Radiation DOI: 10.1143/JJAP.50.016504(Journal) (6692529-N) DOI: 10.7567/JJAP.50.016504(Journal) ========================================================== Created: 2023-01-05 12:09:50 ConfID: 6692542 CauseID: 1557137687 OtherID: 1363323383 JT: Japanese Journal of Applied Physics MD: Kobayashi,50,3r,31501,2011,Ultraviolet Light-Induced Conduction Current in Silicon Nitride Films DOI: 10.1143/JJAP.50.031501(Journal) (6692542-N) DOI: 10.7567/JJAP.50.031501(Journal) ========================================================== Created: 2023-01-05 12:09:50 ConfID: 6692543 CauseID: 1557137688 OtherID: 1363323258 JT: Japanese Journal of Applied Physics MD: Izuari,50,1s2,108,2011,Preparation and Process Clarification of Metal Nanoplate by Pulse Wire Discharged Method in Liquid Media DOI: 10.1143/JJAP.50.01BJ08(Journal) (6692543-N) DOI: 10.7567/JJAP.50.01BJ08(Journal) ========================================================== Created: 2023-01-05 12:09:49 ConfID: 6692540 CauseID: 1557137685 OtherID: 1363323106 JT: Japanese Journal of Applied Physics MD: Kasahara,50,1r,16502,2011,Simple and Low-Cost Fabrication of Flexible Capacitive Tactile Sensors DOI: 10.1143/JJAP.50.016502(Journal) (6692540-N) DOI: 10.7567/JJAP.50.016502(Journal) ========================================================== Created: 2023-01-05 12:09:49 ConfID: 6692541 CauseID: 1557137686 OtherID: 1363323163 JT: Japanese Journal of Applied Physics MD: Funahashi,50,1s1,107,2011,Magnetostructural Property of a Twisted Bis(µ-hydroxo) Dicopper(II) Core and Its Relevance to Formation of an Active Dioxygen Intermediate DOI: 10.1143/JJAP.50.01AJ07(Journal) (6692541-N) DOI: 10.7567/JJAP.50.01AJ07(Journal) ========================================================== Created: 2023-01-05 12:09:48 ConfID: 6692538 CauseID: 1557137683 OtherID: 1363323409 JT: Japanese Journal of Applied Physics MD: Kim,50,3r,32504,2011,A Study on Modulation Configuration of Optoelectronic Oscillators Using Direct Modulation of Semiconductor Lasers DOI: 10.1143/JJAP.50.032504(Journal) (6692538-N) DOI: 10.7567/JJAP.50.032504(Journal) ========================================================== Created: 2023-01-05 12:09:48 ConfID: 6692539 CauseID: 1557137684 OtherID: 1363323078 JT: Japanese Journal of Applied Physics MD: Choi,50,1r,14302,2011,An Analysis of the Field Dependence of Interface Trap Generation under Negative Bias Temperature Instability Stress using Wentzel–Kramers–Brillouin with Density Gradient Method DOI: 10.1143/JJAP.50.014302(Journal) (6692539-N) DOI: 10.7567/JJAP.50.014302(Journal) ========================================================== Created: 2023-01-05 12:09:47 ConfID: 6692536 CauseID: 1557137681 OtherID: 1363323214 JT: Japanese Journal of Applied Physics MD: Shinbo,50,1s2,115,2011,Vapor Sensing Using Waveguide-Based Multiple Surface Plasmon Resonance Sensors DOI: 10.1143/JJAP.50.01BC15(Journal) (6692536-N) DOI: 10.7567/JJAP.50.01BC15(Journal) ========================================================== Created: 2023-01-05 12:09:47 ConfID: 6692537 CauseID: 1557137682 OtherID: 1363323199 JT: Japanese Journal of Applied Physics MD: Takei,50,1s2,102,2011,Development of Ultraviolet Crosslinking Glucose-Based Resist Materials for Advanced Electronic Device Applications Using Nanoimprint Lithography DOI: 10.1143/JJAP.50.01BA02(Journal) (6692537-N) DOI: 10.7567/JJAP.50.01BA02(Journal) ========================================================== Created: 2023-01-05 12:09:19 ConfID: 6692486 CauseID: 1557137620 OtherID: 1363324007 JT: Japanese Journal of Applied Physics MD: Nishiguchi,50,6s,604,2011,Single-Electron Stochastic Resonance Using Si Nanowire Transistors DOI: 10.1143/JJAP.50.06GF04(Journal) (6692486-N) DOI: 10.7567/JJAP.50.06GF04(Journal) ========================================================== Created: 2023-01-05 12:09:19 ConfID: 6692487 CauseID: 1557137621 OtherID: 1363323243 JT: Japanese Journal of Applied Physics MD: Kato,50,1s2,102,2011,Improved Optical Degradation Characteristics of Eu Complex Encapsulated by High-Pressure Annealing DOI: 10.1143/JJAP.50.01BF02(Journal) (6692487-N) DOI: 10.7567/JJAP.50.01BF02(Journal) ========================================================== Created: 2023-01-05 12:09:18 ConfID: 6692484 CauseID: 1557137618 OtherID: 1363323134 JT: Japanese Journal of Applied Physics MD: Ok,50,1s1,102,2011,Structural Change of InGaN Nanostructures Grown by Mixed-Source Hydride Vapor Phase Epitaxy DOI: 10.1143/JJAP.50.01AC02(Journal) (6692484-N) DOI: 10.7567/JJAP.50.01AC02(Journal) ========================================================== Created: 2023-01-05 12:09:18 ConfID: 6692485 CauseID: 1557137619 OtherID: 1363323183 JT: Japanese Journal of Applied Physics MD: Ohtani,50,1s2,108,2011,Fabrication of Organic Light-Emitting Diodes Using Photosynthetic Pigments Extracted from Spinach DOI: 10.1143/JJAP.50.01BC08(Journal) (6692485-N) DOI: 10.7567/JJAP.50.01BC08(Journal) ========================================================== Created: 2023-01-05 12:09:17 ConfID: 6692482 CauseID: 1557137616 OtherID: 1363324017 JT: Japanese Journal of Applied Physics MD: Shibata,50,6s,603,2011,Novel Nanowire-Based Flip-Flop Circuit Utilizing Gate-Controlled GaAs Three-Branch Nanowire Junctions DOI: 10.1143/JJAP.50.06GF03(Journal) (6692482-N) DOI: 10.7567/JJAP.50.06GF03(Journal) ========================================================== Created: 2023-01-05 12:09:17 ConfID: 6692483 CauseID: 1557137617 OtherID: 1363323216 JT: Japanese Journal of Applied Physics MD: Bai,50,1s2,117,2011,Influence of Hydrothermal Conditions on Size of Template Particles for Textured Ceramics DOI: 10.1143/JJAP.50.01BE17(Journal) (6692483-N) DOI: 10.7567/JJAP.50.01BE17(Journal) ========================================================== Created: 2023-01-05 12:09:16 ConfID: 6692480 CauseID: 1557137614 OtherID: 1363323252 JT: Japanese Journal of Applied Physics MD: Tokoi,50,1s2,106,2011,Phase Control of Ti–Fe Nanoparticles Prepared by Pulsed Wire Discharge DOI: 10.1143/JJAP.50.01BJ06(Journal) (6692480-N) DOI: 10.7567/JJAP.50.01BJ06(Journal) ========================================================== Created: 2023-01-05 12:09:16 ConfID: 6692481 CauseID: 1557137615 OtherID: 1363325483 JT: Japanese Journal of Applied Physics MD: Choi,50,3r,31504,2011,Effect of Oxygen Vacancy and Oxygen Vacancy Migration on Dielectric Response of BaTiO3-Based Ceramics DOI: 10.1143/JJAP.50.031504(Journal) (6692481-N) DOI: 10.7567/JJAP.50.031504(Journal) ========================================================== Created: 2023-01-05 12:09:23 ConfID: 6692494 CauseID: 1557137629 OtherID: 1363323104 JT: Japanese Journal of Applied Physics MD: Goto,50,1r,15801,2011,Study of the Reflectivity of Silver Films Deposited by Radio Frequency and Direct Current Coupled Magnetron Sputtering DOI: 10.1143/JJAP.50.015801(Journal) (6692494-N) DOI: 10.7567/JJAP.50.015801(Journal) ========================================================== Created: 2023-01-05 12:09:24 ConfID: 6692495 CauseID: 1557137630 OtherID: 1363323156 JT: Japanese Journal of Applied Physics MD: Wu,50,1s1,102,2011,Growth of Two-Dimensional Carbon Nanostructures and Their Electrical Transport Properties at Low Tempertaure DOI: 10.1143/JJAP.50.01AF02(Journal) (6692495-N) DOI: 10.7567/JJAP.50.01AF02(Journal) ========================================================== Created: 2023-01-05 12:09:22 ConfID: 6692492 CauseID: 1557137627 OtherID: 1363323236 JT: Japanese Journal of Applied Physics MD: Yamakami,50,1s2,102,2011,Effects of Interface Nitride Layer on Electrical Characteristics of SiO2/Nitride/SiC Metal–Insulator–Semiconductor Diode DOI: 10.1143/JJAP.50.01BG02(Journal) (6692492-N) DOI: 10.7567/JJAP.50.01BG02(Journal) ========================================================== Created: 2023-01-05 12:09:23 ConfID: 6692493 CauseID: 1557137628 OtherID: 1363324103 JT: Japanese Journal of Applied Physics MD: Horiuchi,50,6s,610,2011,Novel Fabrication Method of Microcoil Springs Using Laser-Scan Helical Patterning and Nickel Electroplating DOI: 10.1143/JJAP.50.06GM10(Journal) (6692493-N) DOI: 10.7567/JJAP.50.06GM10(Journal) ========================================================== Created: 2023-01-05 12:09:21 ConfID: 6692490 CauseID: 1557137625 OtherID: 1363324044 JT: Japanese Journal of Applied Physics MD: Park,50,6s,608,2011,Nanosize Patterning with Nanoimprint Lithography Using Poly(vinyl alcohol) Transfer Layer DOI: 10.1143/JJAP.50.06GG08(Journal) (6692490-N) DOI: 10.7567/JJAP.50.06GG08(Journal) ========================================================== Created: 2023-01-05 12:09:22 ConfID: 6692491 CauseID: 1557137626 OtherID: 1363323076 JT: Japanese Journal of Applied Physics MD: Narahara,50,1r,14104,2011,Characterization of Short-Pulse Generation Using Traveling-Wave Field-Effect Transistors DOI: 10.1143/JJAP.50.014104(Journal) (6692491-N) DOI: 10.7567/JJAP.50.014104(Journal) ========================================================== Created: 2023-01-05 12:09:20 ConfID: 6692488 CauseID: 1557137623 OtherID: 1363324060 JT: Japanese Journal of Applied Physics MD: Oda,50,6s,601,2011,Electromechanical Displacement Detection With an On-Chip High Electron Mobility Transistor Amplifier DOI: 10.1143/JJAP.50.06GJ01(Journal) (6692488-N) DOI: 10.7567/JJAP.50.06GJ01(Journal) ========================================================== Created: 2023-01-05 12:09:20 ConfID: 6692489 CauseID: 1557137624 OtherID: 1363323129 JT: Japanese Journal of Applied Physics MD: Muta,50,1s1,107,2011,Effect of Excitation Frequency on the Spatial Distributions of a Surface Wave Plasma DOI: 10.1143/JJAP.50.01AB07(Journal) (6692489-N) DOI: 10.7567/JJAP.50.01AB07(Journal) ========================================================== Created: 2023-01-05 12:09:27 ConfID: 6692502 CauseID: 1557137639 OtherID: 1363324080 JT: Japanese Journal of Applied Physics MD: Han,50,6s,612,2011,Effect of Flow Rates on Generation of Monodisperse Clay–Poly(N-isopropylacrylamide) Embolic Microspheres Using Hydrodynamic Focusing Microfluidic Device DOI: 10.1143/JJAP.50.06GL12(Journal) (6692502-N) DOI: 10.7567/JJAP.50.06GL12(Journal) ========================================================== Created: 2023-01-05 12:09:28 ConfID: 6692503 CauseID: 1557137640 OtherID: 1363323113 JT: Japanese Journal of Applied Physics MD: Haghdel,50,1r,16001,2011,Measurement of Ions Penetration Pattern in Point to Grid Atmospheric Corona Discharge DOI: 10.1143/JJAP.50.016001(Journal) (6692503-N) DOI: 10.7567/JJAP.50.016001(Journal) ========================================================== Created: 2023-01-05 12:09:26 ConfID: 6692500 CauseID: 1557137637 OtherID: 1363323387 JT: Japanese Journal of Applied Physics MD: Moser,50,3r,31002,2011,Stress Relaxation in Low-Strain AlInN/GaN Bragg Mirrors DOI: 10.1143/JJAP.50.031002(Journal) (6692500-N) DOI: 10.7567/JJAP.50.031002(Journal) ========================================================== Created: 2023-01-05 12:09:27 ConfID: 6692501 CauseID: 1557137638 OtherID: 1363323075 JT: Japanese Journal of Applied Physics MD: Yun,50,1r,14101,2011,Basic Study on the Radio Frequency Characteristics of the Transmission Lines Employing Periodically Perforated Ground Metal on GaAs Monolithic Microwave Integrated Circuit and Their Equivalent Ciruits DOI: 10.1143/JJAP.50.014101(Journal) (6692501-N) DOI: 10.7567/JJAP.50.014101(Journal) ========================================================== Created: 2023-01-05 12:09:25 ConfID: 6692498 CauseID: 1557137635 OtherID: 1363324012 JT: Japanese Journal of Applied Physics MD: Kang,50,6s,611,2011,Organic Electrolyte Based Pulsed Nanoplating and Fabrication of Carbon Nanotube Network Transistors DOI: 10.1143/JJAP.50.06GE11(Journal) (6692498-N) DOI: 10.7567/JJAP.50.06GE11(Journal) ========================================================== Created: 2023-01-05 12:09:26 ConfID: 6692499 CauseID: 1557137636 OtherID: 1363323205 JT: Japanese Journal of Applied Physics MD: Maeda,50,1s2,110,2011,Dependence on Annealing Temperature of Properties of Cu2ZnSnS4 Thin Films Prepared by Sol–Gel Sulfurization Method DOI: 10.1143/JJAP.50.01BE10(Journal) (6692499-N) DOI: 10.7567/JJAP.50.01BE10(Journal) ========================================================== Created: 2023-01-05 12:09:24 ConfID: 6692496 CauseID: 1557137631 OtherID: 1363323154 JT: Japanese Journal of Applied Physics MD: Suzuki,50,1s1,108,2011,Effect of Hydrogen on Carbon Nanowall Growth by Microwave Plasma-Enhanced Chemical Vapor Deposition DOI: 10.1143/JJAP.50.01AF08(Journal) (6692496-N) DOI: 10.7567/JJAP.50.01AF08(Journal) ========================================================== Created: 2023-01-05 12:09:25 ConfID: 6692497 CauseID: 1557137634 OtherID: 1363323225 JT: Japanese Journal of Applied Physics MD: Wen,50,1s2,107,2011,Effects of Pr Substitution on Electrical Properties of Bi(Fe0.95Mn0.05)O3 Thin Films DOI: 10.1143/JJAP.50.01BF07(Journal) (6692497-N) DOI: 10.7567/JJAP.50.01BF07(Journal) ========================================================== Created: 2023-01-05 12:09:32 ConfID: 6692510 CauseID: 1557137647 OtherID: 1363323114 JT: Japanese Journal of Applied Physics MD: Yi,50,1r,15201,2011,Lateral Manipulation of Single Defect on Insulating Surface Using Noncontact Atomic Force Microscope DOI: 10.1143/JJAP.50.015201(Journal) (6692510-N) DOI: 10.7567/JJAP.50.015201(Journal) ========================================================== Created: 2023-01-05 12:09:32 ConfID: 6692511 CauseID: 1557137648 OtherID: 1363324157 JT: Japanese Journal of Applied Physics MD: Takino,50,7r,70203,2011,Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers DOI: 10.1143/JJAP.50.070203(Journal) (6692511-N) DOI: 10.7567/JJAP.50.070203(Journal) ========================================================== Created: 2023-01-05 12:09:31 ConfID: 6692508 CauseID: 1557137645 OtherID: 1363323177 JT: Japanese Journal of Applied Physics MD: Cho,50,1s1,102,2011,Surface Plasma Treatment of Polyimide Film for Cu Metallization DOI: 10.1143/JJAP.50.01AK02(Journal) (6692508-N) DOI: 10.7567/JJAP.50.01AK02(Journal) ========================================================== Created: 2023-01-05 12:09:31 ConfID: 6692509 CauseID: 1557137646 OtherID: 1363323160 JT: Japanese Journal of Applied Physics MD: Matsumoto,50,1s1,104,2011,Synthesis and Reactivity of µ-η2:η2-Disulfido Dicopper(II) Complex with N,N ',N''-Trimethyl-1,3,5-cis,cis-triaminocyclohexane DOI: 10.1143/JJAP.50.01AK04(Journal) (6692509-N) DOI: 10.7567/JJAP.50.01AK04(Journal) ========================================================== Created: 2023-01-05 12:09:30 ConfID: 6692506 CauseID: 1557137643 OtherID: 1363323208 JT: Japanese Journal of Applied Physics MD: Ohta,50,1s2,116,2011,Preparation of Ce-Doped CaGa2S4 by Mechanochemical Solid-State Reaction DOI: 10.1143/JJAP.50.01BE16(Journal) (6692506-N) DOI: 10.7567/JJAP.50.01BE16(Journal) ========================================================== Created: 2023-01-05 12:09:30 ConfID: 6692507 CauseID: 1557137644 OtherID: 1363324082 JT: Japanese Journal of Applied Physics MD: Nishiyama,50,6s,602,2011,Off-Axis Diffractive Focusing Reflectors for Refractive Index Sensing in Microfluidic Devices DOI: 10.1143/JJAP.50.06GL02(Journal) (6692507-N) DOI: 10.7567/JJAP.50.06GL02(Journal) ========================================================== Created: 2023-01-05 12:09:29 ConfID: 6692504 CauseID: 1557137641 OtherID: 1363323138 JT: Japanese Journal of Applied Physics MD: Chen,50,1s1,114,2011,Magneto-Optical Properties of Armchair Nanographene Ribbons under Spatially Modulated Electric Field DOI: 10.1143/JJAP.50.01AF14(Journal) (6692504-N) DOI: 10.7567/JJAP.50.01AF14(Journal) ========================================================== Created: 2023-01-05 12:09:29 ConfID: 6692505 CauseID: 1557137642 OtherID: 1363323088 JT: Japanese Journal of Applied Physics MD: Martinie,50,1r,14103,2011,Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal–Oxide–Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices DOI: 10.1143/JJAP.50.014103(Journal) (6692505-N) DOI: 10.7567/JJAP.50.014103(Journal) ========================================================== Created: 2023-01-05 12:11:23 ConfID: 6692710 CauseID: 1557137911 OtherID: 1363323460 JT: Japanese Journal of Applied Physics MD: Hong,50,3r,36501,2011,Fabrication and Evaluation of Nanopillar-Shaped Phase-Change Memory Devices DOI: 10.1143/JJAP.50.036501(Journal) (6692710-N) DOI: 10.7567/JJAP.50.036501(Journal) ========================================================== Created: 2023-01-05 12:11:24 ConfID: 6692711 CauseID: 1557137912 OtherID: 1363323428 JT: Japanese Journal of Applied Physics MD: Xi,50,3r,35805,2011,Ultrawide Band Microwave Absorption Properties of Ultrasound Processed CrO2–Paraffin Wax Composites DOI: 10.1143/JJAP.50.035805(Journal) (6692711-N) DOI: 10.7567/JJAP.50.035805(Journal) ========================================================== Created: 2023-01-05 12:11:20 ConfID: 6692708 CauseID: 1557137909 OtherID: 1363324108 JT: Japanese Journal of Applied Physics MD: Choi,50,6s,613,2011,Convection-Based Tilt Sensor with Minimized Temperature Fluctuation DOI: 10.1143/JJAP.50.06GM13(Journal) (6692708-N) DOI: 10.7567/JJAP.50.06GM13(Journal) ========================================================== Created: 2023-01-05 12:11:20 ConfID: 6692709 CauseID: 1557137910 OtherID: 1363323206 JT: Japanese Journal of Applied Physics MD: Lee,50,1s2,119,2011,Synthesis and Characterization of Cu- and Co-Doped Bi4V2O11 for Intermediate-Temperature Solid Oxide Fuel Cell Electrolytes by Carbonate Coprecipitation DOI: 10.1143/JJAP.50.01BE19(Journal) (6692709-N) DOI: 10.7567/JJAP.50.01BE19(Journal) ========================================================== Created: 2023-01-05 12:11:17 ConfID: 6692706 CauseID: 1557137903 OtherID: 1363324148 JT: Japanese Journal of Applied Physics MD: Yun,50,7r,71201,2011,Phase Change Characteristics of InxSb40-xTe60 Chalcogenide Alloy for Phase Change Random Access Memory DOI: 10.1143/JJAP.50.071201(Journal) (6692706-N) DOI: 10.7567/JJAP.50.071201(Journal) ========================================================== Created: 2023-01-05 12:11:17 ConfID: 6692707 CauseID: 1557137904 OtherID: 1363324146 JT: Japanese Journal of Applied Physics MD: Swain,50,7r,71302,2011,Passivation of Germanium Surfaces by a Quinhydrone–Methanol Solution Treatment DOI: 10.1143/JJAP.50.071302(Journal) (6692707-N) DOI: 10.7567/JJAP.50.071302(Journal) ========================================================== Created: 2023-01-05 12:11:16 ConfID: 6692704 CauseID: 1557137902 OtherID: 1363324181 JT: Japanese Journal of Applied Physics MD: Park,50,7r,72101,2011,Optical Properties of Staggered InGaN/InGaN/GaN Quantum-Well Structures with Ga- and N-Faces DOI: 10.1143/JJAP.50.072101(Journal) (6692704-N) DOI: 10.7567/JJAP.50.072101(Journal) ========================================================== Created: 2023-01-05 12:11:29 ConfID: 6692718 CauseID: 1557137922 OtherID: 1363324138 JT: Japanese Journal of Applied Physics MD: Kageshima,50,7r,70115,2011,Theoretical Study on Magnetoelectric and Thermoelectric Properties for Graphene Devices DOI: 10.1143/JJAP.50.070115(Journal) (6692718-N) DOI: 10.7567/JJAP.50.070115(Journal) ========================================================== Created: 2023-01-05 12:11:25 ConfID: 6692719 CauseID: 1557137923 OtherID: 1363324144 JT: Japanese Journal of Applied Physics MD: Du,50,7r,70211,2011,Phase Change Line Memory Cell Based on Ge2Sb2Te5 Fabricated Using Focused Ion Beam DOI: 10.1143/JJAP.50.070211(Journal) (6692719-N) DOI: 10.7567/JJAP.50.070211(Journal) ========================================================== Created: 2023-01-05 12:11:22 ConfID: 6692716 CauseID: 1557137917 OtherID: 1363322901 JT: Japanese Journal of Applied Physics MD: Pang,50,11r,110203,2011,Low Temperature Sintering and Properties of (K0.5Na0.5)NbO3 Piezoelectric Ceramics DOI: 10.1143/JJAP.50.110203(Journal) (6692716-N) DOI: 10.7567/JJAP.50.110203(Journal) ========================================================== Created: 2023-01-05 12:11:28 ConfID: 6692717 CauseID: 1557137921 OtherID: 1363323244 JT: Japanese Journal of Applied Physics MD: Tachikawa,50,1s2,103,2011,Density Functional Theory Study of Boron- and Nitrogen-Atom-Doped Graphene Chips DOI: 10.1143/JJAP.50.01BJ03(Journal) (6692717-N) DOI: 10.7567/JJAP.50.01BJ03(Journal) ========================================================== Created: 2023-01-05 12:11:21 ConfID: 6692714 CauseID: 1557137915 OtherID: 1363324142 JT: Japanese Journal of Applied Physics MD: Jeong,50,7r,70202,2011,Study on the Effects of Zr-Incorporated InZnO Thin-Film Transistors Using a Solution Process DOI: 10.1143/JJAP.50.070202(Journal) (6692714-N) DOI: 10.7567/JJAP.50.070202(Journal) ========================================================== Created: 2023-01-05 12:11:22 ConfID: 6692715 CauseID: 1557137916 OtherID: 1363323190 JT: Japanese Journal of Applied Physics MD: Ito,50,1s2,102,2011,Evaluation of Alignment of Nematic Liquid Crystal Thin Film by Spectroscopic Ellipsometry DOI: 10.1143/JJAP.50.01BB02(Journal) (6692715-N) DOI: 10.7567/JJAP.50.01BB02(Journal) ========================================================== Created: 2023-01-05 12:11:24 ConfID: 6692712 CauseID: 1557137913 OtherID: 1363324180 JT: Japanese Journal of Applied Physics MD: Lee,50,7r,74101,2011,Dynamic Driving Current Using Side Gate Bias of Single-Electron Transistors DOI: 10.1143/JJAP.50.074101(Journal) (6692712-N) DOI: 10.7567/JJAP.50.074101(Journal) ========================================================== Created: 2023-01-05 12:11:21 ConfID: 6692713 CauseID: 1557137914 OtherID: 1363323224 JT: Japanese Journal of Applied Physics MD: Sato,50,1s2,101,2011,Structural and Electrical Characterization of Three-Dimensional Superlattices of Organic Monolayer Protected Gold Nanocrystals DOI: 10.1143/JJAP.50.01BH01(Journal) (6692713-N) DOI: 10.7567/JJAP.50.01BH01(Journal) ========================================================== Created: 2023-01-05 12:11:32 ConfID: 6692726 CauseID: 1557137935 OtherID: 1363323013 JT: Japanese Journal of Applied Physics MD: Jung,50,12r,122301,2011,Optical Modeling and Analysis of Organic Solar Cells with Coherent Multilayers and Incoherent Glass Substrate Using Generalized Transfer Matrix Method DOI: 10.1143/JJAP.50.122301(Journal) (6692726-N) DOI: 10.7567/JJAP.50.122301(Journal) ========================================================== Created: 2023-01-05 12:11:32 ConfID: 6692727 CauseID: 1557137936 OtherID: 1363324277 JT: Japanese Journal of Applied Physics MD: Ono,50,7s,722,2011,Experimental Attempts for Deep Insertion in Ultrasonically Forced Insertion Process DOI: 10.1143/JJAP.50.07HE22(Journal) (6692727-N) DOI: 10.7567/JJAP.50.07HE22(Journal) ========================================================== Created: 2023-01-05 12:11:26 ConfID: 6692724 CauseID: 1557137927 OtherID: 1363324281 JT: Japanese Journal of Applied Physics MD: Hwang,50,7s,709,2011,Degradation of Diethyl Phthalate by Sono-Fenton Process and its Dependence on the Power Density DOI: 10.1143/JJAP.50.07HE09(Journal) (6692724-N) DOI: 10.7567/JJAP.50.07HE09(Journal) ========================================================== Created: 2023-01-05 12:11:27 ConfID: 6692725 CauseID: 1557137929 OtherID: 1363324267 JT: Japanese Journal of Applied Physics MD: Uchida,50,7s,701,2011,Measurement of Amount of Generated Acoustic Cavitation: Investigation of Spatial Distribution of Acoustic Cavitation Generation Using Broadband Integrated Voltage DOI: 10.1143/JJAP.50.07HE01(Journal) (6692725-N) DOI: 10.7567/JJAP.50.07HE01(Journal) ========================================================== Created: 2023-01-05 12:11:29 ConfID: 6692722 CauseID: 1557137926 OtherID: 1363324249 JT: Japanese Journal of Applied Physics MD: Yoshikawa,50,7s,704,2011,Measurement of the Resonant Characteristics of a Single Bubble Vibration by Using a Laser Doppler Vibrometer DOI: 10.1143/JJAP.50.07HE04(Journal) (6692722-N) DOI: 10.7567/JJAP.50.07HE04(Journal) ========================================================== Created: 2023-01-05 12:11:26 ConfID: 6692723 CauseID: 1557137928 OtherID: 1363323444 JT: Japanese Journal of Applied Physics MD: Hsieh,50,3r,36503,2011,Improved Retention Characteristic in Polycrystalline Silicon–Oxide–Hafnium Oxide–Oxide–Silicon-Type Nonvolatile Memory with Robust Tunnel Oxynitride DOI: 10.1143/JJAP.50.036503(Journal) (6692723-N) DOI: 10.7567/JJAP.50.036503(Journal) ========================================================== Created: 2023-01-05 12:11:25 ConfID: 6692720 CauseID: 1557137924 OtherID: 1363324331 JT: Japanese Journal of Applied Physics MD: Suzuki,50,8r,80211,2011,Heterodyne Mixing of Sub-Terahertz Output Power from Two Resonant Tunneling Diodes Using InP Schottky Barrier Diode DOI: 10.1143/JJAP.50.080211(Journal) (6692720-N) DOI: 10.7567/JJAP.50.080211(Journal) ========================================================== Created: 2023-01-05 12:11:28 ConfID: 6692721 CauseID: 1557137925 OtherID: 1363323432 JT: Japanese Journal of Applied Physics MD: Mercier,50,3r,35603,2011,Numerical Investigation of the Growth Rate Enhancement of SiC Crystal Growth from Silicon Melts DOI: 10.1143/JJAP.50.035603(Journal) (6692721-N) DOI: 10.7567/JJAP.50.035603(Journal) ========================================================== Created: 2023-01-05 12:11:31 ConfID: 6692734 CauseID: 1557137944 OtherID: 1363324307 JT: Japanese Journal of Applied Physics MD: Ponnle,50,7s,705,2011,Multi Element Diverging Beam from a Linear Array Transducer for Transverse Cross Sectional Imaging of Carotid Artery: Simulations and Phantom Vessel Validation DOI: 10.1143/JJAP.50.07HF05(Journal) (6692734-N) DOI: 10.7567/JJAP.50.07HF05(Journal) ========================================================== Created: 2023-01-05 12:11:31 ConfID: 6692735 CauseID: 1557137945 OtherID: 1363324128 JT: Japanese Journal of Applied Physics MD: Abe,50,7r,70102,2011,Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process DOI: 10.1143/JJAP.50.070102(Journal) (6692735-N) DOI: 10.7567/JJAP.50.070102(Journal) ========================================================== Created: 2023-01-05 12:11:33 ConfID: 6692732 CauseID: 1557137941 OtherID: 1363324136 JT: Japanese Journal of Applied Physics MD: Nouchi,50,7r,70109,2011,Empirical Modeling of Metal-Contact Effects on Graphene Field-Effect Transistors DOI: 10.1143/JJAP.50.070109(Journal) (6692732-N) DOI: 10.7567/JJAP.50.070109(Journal) ========================================================== Created: 2023-01-05 12:11:34 ConfID: 6692733 CauseID: 1557137943 OtherID: 1363323436 JT: Japanese Journal of Applied Physics MD: Lin,50,3r,35802,2011,Diamond-like Carbon Films Deposited at Room Temperature on Flexible Plastics Substrates for Antireflection Coating DOI: 10.1143/JJAP.50.035802(Journal) (6692733-N) DOI: 10.7567/JJAP.50.035802(Journal) ========================================================== Created: 2023-01-05 12:11:34 ConfID: 6692730 CauseID: 1557137939 OtherID: 1363324275 JT: Japanese Journal of Applied Physics MD: Kozuka,50,7s,727,2011,Manipulation of Particles in a Microchannel with Various Geometric Spaces Using Ultrasound DOI: 10.1143/JJAP.50.07HE27(Journal) (6692730-N) DOI: 10.7567/JJAP.50.07HE27(Journal) ========================================================== Created: 2023-01-05 12:11:30 ConfID: 6692731 CauseID: 1557137940 OtherID: 1363323197 JT: Japanese Journal of Applied Physics MD: Minani,50,1s2,112,2011,Double-Faced Organic Light-Emitting Device Using Laminate Method DOI: 10.1143/JJAP.50.01BC12(Journal) (6692731-N) DOI: 10.7567/JJAP.50.01BC12(Journal) ========================================================== Created: 2023-01-05 12:11:33 ConfID: 6692729 CauseID: 1557137938 OtherID: 1363323235 JT: Japanese Journal of Applied Physics MD: Choi,50,1s2,102,2011,Strain Effects on Optoelectronic Characteristics of Laterally Arrayed Silicon Nanowires on a Flexible Substrate DOI: 10.1143/JJAP.50.01BH02(Journal) (6692729-N) DOI: 10.7567/JJAP.50.01BH02(Journal) ========================================================== Created: 2023-01-05 12:11:05 ConfID: 6692679 CauseID: 1557137868 OtherID: 1363323181 JT: Japanese Journal of Applied Physics MD: Itoh,50,1s2,114,2011,Enhancement of the Open-Circuit Voltage and Hole Conduction of Tetraphenyl Porphyrin/C60 Multilayered Photovoltaic Device by the Insertion of Oxide Hole Collection Layers DOI: 10.1143/JJAP.50.01BC14(Journal) (6692679-N) DOI: 10.7567/JJAP.50.01BC14(Journal) ========================================================== Created: 2023-01-05 12:11:02 ConfID: 6692676 CauseID: 1557137861 OtherID: 1363323389 JT: Japanese Journal of Applied Physics MD: Hwang,50,3r,32202,2011,A Novel Birefringent Photonic Crystal Fiber and Its Application to Curvature Measurement DOI: 10.1143/JJAP.50.032202(Journal) (6692676-N) DOI: 10.7567/JJAP.50.032202(Journal) ========================================================== Created: 2023-01-05 12:11:03 ConfID: 6692677 CauseID: 1557137862 OtherID: 1363323434 JT: Japanese Journal of Applied Physics MD: Nakamura,50,3r,35202,2011,Universal Model for Local Anodic Oxidation Based on Surface Chemistry of Oxide Islands DOI: 10.1143/JJAP.50.035202(Journal) (6692677-N) DOI: 10.7567/JJAP.50.035202(Journal) ========================================================== Created: 2023-01-05 12:11:01 ConfID: 6692674 CauseID: 1557137859 OtherID: 1363324256 JT: Japanese Journal of Applied Physics MD: Kadota,50,7s,711,2011,5.4 GHz Lamb Wave Resonator on LiNbO3 Thin Crystal Plate and Its Application DOI: 10.1143/JJAP.50.07HD11(Journal) (6692674-N) DOI: 10.7567/JJAP.50.07HD11(Journal) ========================================================== Created: 2023-01-05 12:11:01 ConfID: 6692675 CauseID: 1557137860 OtherID: 1363324242 JT: Japanese Journal of Applied Physics MD: Takarada,50,7s,703,2011,Monolithic Piezoelectric Sensor for Measurement of Triaxial Forces Applied to Bridge by String Vibration DOI: 10.1143/JJAP.50.07HC03(Journal) (6692675-N) DOI: 10.7567/JJAP.50.07HC03(Journal) ========================================================== Created: 2023-01-05 12:11:04 ConfID: 6692672 CauseID: 1557137857 OtherID: 1363323217 JT: Japanese Journal of Applied Physics MD: Choi,50,1s2,114,2011,Preparation of Nickel Thin Sheets with Nanosized Ferrites by Combustion Synthesis and Electroforming DOI: 10.1143/JJAP.50.01BE14(Journal) (6692672-N) DOI: 10.7567/JJAP.50.01BE14(Journal) ========================================================== Created: 2023-01-05 12:11:04 ConfID: 6692673 CauseID: 1557137858 OtherID: 1363324096 JT: Japanese Journal of Applied Physics MD: Kim,50,6s,614,2011,Enhanced Fluorescence by Controlled Surface Roughness of Plastic Biochip DOI: 10.1143/JJAP.50.06GL14(Journal) (6692673-N) DOI: 10.7567/JJAP.50.06GL14(Journal) ========================================================== Created: 2023-01-05 12:11:06 ConfID: 6692686 CauseID: 1557137875 OtherID: 1363324130 JT: Japanese Journal of Applied Physics MD: Kalita,50,7r,70106,2011,Structural Analysis and Direct Imaging of Rotational Stacking Faults in Few-Layer Graphene Synthesized from Solid Botanical Precursor DOI: 10.1143/JJAP.50.070106(Journal) (6692686-N) DOI: 10.7567/JJAP.50.070106(Journal) ========================================================== Created: 2023-01-05 12:11:07 ConfID: 6692687 CauseID: 1557137876 OtherID: 1363324111 JT: Japanese Journal of Applied Physics MD: Cho,50,6s,617,2011,Design and Fabrication of Highly Manufacturable Microelectromechanical Systems Test Sockets for Ball Grid Array Integrated Circuit Packages DOI: 10.1143/JJAP.50.06GM17(Journal) (6692687-N) DOI: 10.7567/JJAP.50.06GM17(Journal) ========================================================== Created: 2023-01-05 12:11:09 ConfID: 6692684 CauseID: 1557137873 OtherID: 1363323164 JT: Japanese Journal of Applied Physics MD: Kikuchi,50,1s1,103,2011,Effects of Environmental Humidity and Temperature on Sterilization Efficiency of Dielectric Barrier Discharge Plasmas in Atmospheric Pressure Air DOI: 10.1143/JJAP.50.01AH03(Journal) (6692684-N) DOI: 10.7567/JJAP.50.01AH03(Journal) ========================================================== Created: 2023-01-05 12:11:06 ConfID: 6692685 CauseID: 1557137874 OtherID: 1363324254 JT: Japanese Journal of Applied Physics MD: Matsuda,50,7s,714,2011,Experimental Studies of Quality Factor Deterioration in Shear-Horizontal-Type Surface Acoustic Wave Resonators Caused by Apodization of Interdigital Transducer DOI: 10.1143/JJAP.50.07HD14(Journal) (6692685-N) DOI: 10.7567/JJAP.50.07HD14(Journal) ========================================================== Created: 2023-01-05 12:11:08 ConfID: 6692682 CauseID: 1557137871 OtherID: 1363323167 JT: Japanese Journal of Applied Physics MD: Shi,50,1s1,101,2011,Optimum Decomposition Conditions for Glass Fiber Reinforced Plastic Recycling by Superheated Steam DOI: 10.1143/JJAP.50.01AJ01(Journal) (6692682-N) DOI: 10.7567/JJAP.50.01AJ01(Journal) ========================================================== Created: 2023-01-05 12:11:09 ConfID: 6692683 CauseID: 1557137872 OtherID: 1363323450 JT: Japanese Journal of Applied Physics MD: Cheng,50,3r,37001,2011,Study on All-Solid-State Chloride Sensor Based on Tin Oxide/Indium Tin Oxide Glass DOI: 10.1143/JJAP.50.037001(Journal) (6692683-N) DOI: 10.7567/JJAP.50.037001(Journal) ========================================================== Created: 2023-01-05 12:11:05 ConfID: 6692680 CauseID: 1557137869 OtherID: 1363324305 JT: Japanese Journal of Applied Physics MD: Yamamoto,50,7s,712,2011,Experimental Study on the Pulse Wave Propagation in a Human Artery Model DOI: 10.1143/JJAP.50.07HF12(Journal) (6692680-N) DOI: 10.7567/JJAP.50.07HF12(Journal) ========================================================== Created: 2023-01-05 12:11:08 ConfID: 6692681 CauseID: 1557137870 OtherID: 1363323196 JT: Japanese Journal of Applied Physics MD: Tsai,50,1s2,113,2011,Charge Transporting Properties and Output Characteristics in Polythiophene:Fullerene Derivative Solar Cells DOI: 10.1143/JJAP.50.01BC13(Journal) (6692681-N) DOI: 10.7567/JJAP.50.01BC13(Journal) ========================================================== Created: 2023-01-05 12:11:12 ConfID: 6692694 CauseID: 1557137887 OtherID: 1363324097 JT: Japanese Journal of Applied Physics MD: Chuang,50,6s,611,2011,Programmable Dielectrophoretic Chip for Cell Manipulations DOI: 10.1143/JJAP.50.06GL11(Journal) (6692694-N) DOI: 10.7567/JJAP.50.06GL11(Journal) ========================================================== Created: 2023-01-05 12:11:12 ConfID: 6692695 CauseID: 1557137888 OtherID: 1363323195 JT: Japanese Journal of Applied Physics MD: Cho,50,1s2,103,2011,Study of the Characteristics of Organic Thin Film Transistors with Plasma-Polymer Gate Dielectrics DOI: 10.1143/JJAP.50.01BC03(Journal) (6692695-N) DOI: 10.7567/JJAP.50.01BC03(Journal) ========================================================== Created: 2023-01-05 12:11:14 ConfID: 6692692 CauseID: 1557137885 OtherID: 1363323180 JT: Japanese Journal of Applied Physics MD: Kitamura,50,1s2,101,2011,High Current-Gain Cutoff Frequencies above 10 MHz in n-Channel C60 and p-Channel Pentacene Thin-Film Transistors DOI: 10.1143/JJAP.50.01BC01(Journal) (6692692-N) DOI: 10.7567/JJAP.50.01BC01(Journal) ========================================================== Created: 2023-01-05 12:11:11 ConfID: 6692693 CauseID: 1557137886 OtherID: 1363324310 JT: Japanese Journal of Applied Physics MD: Kim,50,7s,704,2011,Acoustic Characteristics of the Snapping Shrimp Sound Observed in the Coastal Sea of Korea DOI: 10.1143/JJAP.50.07HG04(Journal) (6692693-N) DOI: 10.7567/JJAP.50.07HG04(Journal) ========================================================== Created: 2023-01-05 12:11:10 ConfID: 6692690 CauseID: 1557137883 OtherID: 1363325486 JT: Japanese Journal of Applied Physics MD: Nakamura,50,3r,31505,2011,Enhanced Piezoelectric Constant of (1-x)BiFeO3–xBiCoO3 Thin Films Grown on LaAlO3 Substrate DOI: 10.1143/JJAP.50.031505(Journal) (6692690-N) DOI: 10.7567/JJAP.50.031505(Journal) ========================================================== Created: 2023-01-05 12:11:14 ConfID: 6692691 CauseID: 1557137884 OtherID: 1363323416 JT: Japanese Journal of Applied Physics MD: Arakawa,50,3r,32204,2011,InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well Exhibiting Giant Electrorefractive Index Change DOI: 10.1143/JJAP.50.032204(Journal) (6692691-N) DOI: 10.7567/JJAP.50.032204(Journal) ========================================================== Created: 2023-01-05 12:11:07 ConfID: 6692688 CauseID: 1557137877 OtherID: 1363323152 JT: Japanese Journal of Applied Physics MD: Kaneko,50,1s1,111,2011,Mass Density as Basis Parameter on Mechanical Properties under Diamond-Like Carbon Prepared in Wide Range of Conditions Using Variety of Methods DOI: 10.1143/JJAP.50.01AF11(Journal) (6692688-N) DOI: 10.7567/JJAP.50.01AF11(Journal) ========================================================== Created: 2023-01-05 12:11:10 ConfID: 6692689 CauseID: 1557137882 OtherID: 1363324126 JT: Japanese Journal of Applied Physics MD: Panin,50,7r,70110,2011,Resistive Switching in Al/Graphene Oxide/Al Structure DOI: 10.1143/JJAP.50.070110(Journal) (6692689-N) DOI: 10.7567/JJAP.50.070110(Journal) ========================================================== Created: 2023-01-05 12:11:19 ConfID: 6692702 CauseID: 1557137900 OtherID: 1363324264 JT: Japanese Journal of Applied Physics MD: Sugasawa,50,7s,703,2011,Observation of Microstructural Deformation Behavior in Metals Caused by Cavitation Impact DOI: 10.1143/JJAP.50.07HE03(Journal) (6692702-N) DOI: 10.7567/JJAP.50.07HE03(Journal) ========================================================== Created: 2023-01-05 12:11:16 ConfID: 6692703 CauseID: 1557137901 OtherID: 1363323401 JT: Japanese Journal of Applied Physics MD: Shafiee,50,3r,32602,2011,Control of the Birefringence Dispersion of an Optical Polymer by Doping with an Inorganic Crystal DOI: 10.1143/JJAP.50.032602(Journal) (6692703-N) DOI: 10.7567/JJAP.50.032602(Journal) ========================================================== Created: 2023-01-05 12:11:18 ConfID: 6692700 CauseID: 1557137897 OtherID: 1363324137 JT: Japanese Journal of Applied Physics MD: Satou,50,7r,70116,2011,Theoretical Study of Population Inversion in Graphene under Pulse Excitation DOI: 10.1143/JJAP.50.070116(Journal) (6692700-N) DOI: 10.7567/JJAP.50.070116(Journal) ========================================================== Created: 2023-01-05 12:11:19 ConfID: 6692701 CauseID: 1557137899 OtherID: 1363322902 JT: Japanese Journal of Applied Physics MD: Furuta,50,11r,110204,2011,Photocurrent and Persistent Photoconductivity in Zinc Oxide Thin-Film Transistors under Ultraviolet-Light Irradiation DOI: 10.1143/JJAP.50.110204(Journal) (6692701-N) DOI: 10.7567/JJAP.50.110204(Journal) ========================================================== Created: 2023-01-05 12:11:15 ConfID: 6692698 CauseID: 1557137895 OtherID: 1363323174 JT: Japanese Journal of Applied Physics MD: Huang,50,1s1,105,2011,Static Water Contact Angle Analysis of Cyclonic Atmospheric Pressure Plasma-Activated Polycarbonate DOI: 10.1143/JJAP.50.01AH05(Journal) (6692698-N) DOI: 10.7567/JJAP.50.01AH05(Journal) ========================================================== Created: 2023-01-05 12:11:18 ConfID: 6692699 CauseID: 1557137896 OtherID: 1363324122 JT: Japanese Journal of Applied Physics MD: Mahjoub,50,7r,70119,2011,Towards Graphene GHz/THz Nanosensor DOI: 10.1143/JJAP.50.070119(Journal) (6692699-N) DOI: 10.7567/JJAP.50.070119(Journal) ========================================================== Created: 2023-01-05 12:11:13 ConfID: 6692696 CauseID: 1557137889 OtherID: 1363324292 JT: Japanese Journal of Applied Physics MD: Osumi,50,7s,730,2011,Fundamental Study of Detecting Internal Defect in Building Materials Using High-Intensity Aerial Ultrasonic Waves with Finite Amplitude DOI: 10.1143/JJAP.50.07HE30(Journal) (6692696-N) DOI: 10.7567/JJAP.50.07HE30(Journal) ========================================================== Created: 2023-01-05 12:11:15 ConfID: 6692697 CauseID: 1557137894 OtherID: 1363323438 JT: Japanese Journal of Applied Physics MD: Miyazaki,50,3r,35804,2011,Preparation and Thermoelectric Properties of a Chimney-Ladder (Mn1-xFex)Siγ (γ∼1.7) Solid Solution DOI: 10.1143/JJAP.50.035804(Journal) (6692697-N) DOI: 10.7567/JJAP.50.035804(Journal) ========================================================== Created: 2023-01-05 12:10:48 ConfID: 6692646 CauseID: 1557137820 OtherID: 1363323215 JT: Japanese Journal of Applied Physics MD: Oomae,50,1s2,112,2011,Anomalous Hall Effect and Magnetoresistance in Mn-Doped ZnSnAs2 Epitaxial Film on InP Substrates DOI: 10.1143/JJAP.50.01BE12(Journal) (6692646-N) DOI: 10.7567/JJAP.50.01BE12(Journal) ========================================================== Created: 2023-01-05 12:10:47 ConfID: 6692644 CauseID: 1557137818 OtherID: 1363323176 JT: Japanese Journal of Applied Physics MD: Lee,50,1s1,101,2011,Hydrogenated Amorphous Carbon Films Prepared by Filtered Vacuum Arc Method with Various C2H2 Pressures DOI: 10.1143/JJAP.50.01AH01(Journal) (6692644-N) DOI: 10.7567/JJAP.50.01AH01(Journal) ========================================================== Created: 2023-01-05 12:10:48 ConfID: 6692645 CauseID: 1557137819 OtherID: 1363324050 JT: Japanese Journal of Applied Physics MD: Komagata,50,6s,601,2011,Ferromagnetic MnAs Nanocluster Composites Position-Controlled on GaAs (111)B Substrates toward Lateral Magnetoresistive Devices DOI: 10.1143/JJAP.50.06GH01(Journal) (6692645-N) DOI: 10.7567/JJAP.50.06GH01(Journal) ========================================================== Created: 2023-01-05 12:10:46 ConfID: 6692642 CauseID: 1557137816 OtherID: 1363325464 JT: Japanese Journal of Applied Physics MD: Zhu,50,3r,31502,2011,Interfacial Dipole at High-k Dielectric/SiO2 Interface: X-ray Photoelectron Spectroscopy Characteristics DOI: 10.1143/JJAP.50.031502(Journal) (6692642-N) DOI: 10.7567/JJAP.50.031502(Journal) ========================================================== Created: 2023-01-05 12:10:47 ConfID: 6692643 CauseID: 1557137817 OtherID: 1363324323 JT: Japanese Journal of Applied Physics MD: Park,50,8r,80202,2011,Structural and Electrical Properties of Solution-Processed Gallium-Doped Indium Oxide Thin-Film Transistors DOI: 10.1143/JJAP.50.080202(Journal) (6692643-N) DOI: 10.7567/JJAP.50.080202(Journal) ========================================================== Created: 2023-01-05 12:10:45 ConfID: 6692640 CauseID: 1557137813 OtherID: 1363325485 JT: Japanese Journal of Applied Physics MD: Sugisaka,50,3r,32201,2011,Short Photonic-Crystal Directional Coupling Optical Switch of Extended Optical Bandwidth Using Flat Dispersion DOI: 10.1143/JJAP.50.032201(Journal) (6692640-N) DOI: 10.7567/JJAP.50.032201(Journal) ========================================================== Created: 2023-01-05 12:10:45 ConfID: 6692641 CauseID: 1557137814 OtherID: 1363323337 JT: Japanese Journal of Applied Physics MD: Miyamoto,50,3r,30206,2011,Multilayer InAs Quantum Dot with GaNAs Strain Compensation Layers Partly Inserted in a Thin Spacer Layer DOI: 10.1143/JJAP.50.030206(Journal) (6692641-N) DOI: 10.7567/JJAP.50.030206(Journal) ========================================================== Created: 2023-01-05 12:10:51 ConfID: 6692654 CauseID: 1557137832 OtherID: 1363323153 JT: Japanese Journal of Applied Physics MD: Ho,50,1s1,105,2011,Magnetoelectronic and Optical Properties of Monolayer and AB-Stacked Bilayer Graphenes DOI: 10.1143/JJAP.50.01AF05(Journal) (6692654-N) DOI: 10.7567/JJAP.50.01AF05(Journal) ========================================================== Created: 2023-01-05 12:10:52 ConfID: 6692655 CauseID: 1557137833 OtherID: 1363323162 JT: Japanese Journal of Applied Physics MD: Ogawa,50,1s1,105,2011,Unique µ-Arene-dimolybdenum Complexes with a Mo–Mo Multiple Bond DOI: 10.1143/JJAP.50.01AK05(Journal) (6692655-N) DOI: 10.7567/JJAP.50.01AK05(Journal) ========================================================== Created: 2023-01-05 12:10:50 ConfID: 6692652 CauseID: 1557137829 OtherID: 1363324073 JT: Japanese Journal of Applied Physics MD: Oishi,50,6s,606,2011,Signal Processing Using Karhunen–Loève Expansion for Wafer Focus Measurement in Lithography DOI: 10.1143/JJAP.50.06GJ06(Journal) (6692652-N) DOI: 10.7567/JJAP.50.06GJ06(Journal) ========================================================== Created: 2023-01-05 12:10:50 ConfID: 6692653 CauseID: 1557137830 OtherID: 1363323448 JT: Japanese Journal of Applied Physics MD: Higgins,50,3r,36504,2011,Resolution, Line-Edge Roughness, Sensitivity Tradeoff, and Quantum Yield of High Photo Acid Generator Resists for Extreme Ultraviolet Lithography DOI: 10.1143/JJAP.50.036504(Journal) (6692653-N) DOI: 10.7567/JJAP.50.036504(Journal) ========================================================== Created: 2023-01-05 12:10:54 ConfID: 6692650 CauseID: 1557137827 OtherID: 1363324240 JT: Japanese Journal of Applied Physics MD: Li,50,7s,709,2011,Tomographic Measurement of Vortex Air Flow Field Using Multichannel Transmission and Reception of Coded Acoustic Wave Signals DOI: 10.1143/JJAP.50.07HC09(Journal) (6692650-N) DOI: 10.7567/JJAP.50.07HC09(Journal) ========================================================== Created: 2023-01-05 12:10:54 ConfID: 6692651 CauseID: 1557137828 OtherID: 1363324198 JT: Japanese Journal of Applied Physics MD: Izumida,50,7r,76506,2011,Thermal-Annealing Effects on Dopant Redistribution in Nanoscale Si Fin DOI: 10.1143/JJAP.50.076506(Journal) (6692651-N) DOI: 10.7567/JJAP.50.076506(Journal) ========================================================== Created: 2023-01-05 12:10:49 ConfID: 6692648 CauseID: 1557137821 OtherID: 1363324121 JT: Japanese Journal of Applied Physics MD: Imaizumi,50,7r,70105,2011,Oxygen-Induced Reduction of the Graphitization Temperature of SiC Surface DOI: 10.1143/JJAP.50.070105(Journal) (6692648-N) DOI: 10.7567/JJAP.50.070105(Journal) ========================================================== Created: 2023-01-05 12:10:49 ConfID: 6692649 CauseID: 1557137822 OtherID: 1363324140 JT: Japanese Journal of Applied Physics MD: Jung,50,7r,70111,2011,Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation DOI: 10.1143/JJAP.50.070111(Journal) (6692649-N) DOI: 10.7567/JJAP.50.070111(Journal) ========================================================== Created: 2023-01-05 12:10:59 ConfID: 6692662 CauseID: 1557137843 OtherID: 1363323232 JT: Japanese Journal of Applied Physics MD: Takahagi,50,1s2,101,2011,Equivalent Circuit Model of Triple-Barrier Resonant Tunneling Diodes Monolithically Integrated with Bow-Tie Antennas and Analysis of Rectification Properties towards Ultra Wideband Terahertz Detections DOI: 10.1143/JJAP.50.01BG01(Journal) (6692662-N) DOI: 10.7567/JJAP.50.01BG01(Journal) ========================================================== Created: 2023-01-05 12:10:59 ConfID: 6692663 CauseID: 1557137844 OtherID: 1363323193 JT: Japanese Journal of Applied Physics MD: Noda,50,1s2,110,2011,Crystal Growth of Anthracene by Dip Coating and Application for Organic Electroluminescence Devices DOI: 10.1143/JJAP.50.01BC10(Journal) (6692663-N) DOI: 10.7567/JJAP.50.01BC10(Journal) ========================================================== Created: 2023-01-05 12:10:58 ConfID: 6692660 CauseID: 1557137841 OtherID: 1363324150 JT: Japanese Journal of Applied Physics MD: Kaneko,50,7r,70213,2011,Quasi-In vivo Heart Electrocardiogram Measurement of ST Period Using Convolution of Cell Network Extracellular Field Potential Propagation in Lined-Up Cardiomyocyte Cell-Network Circuit DOI: 10.1143/JJAP.50.070213(Journal) (6692660-N) DOI: 10.7567/JJAP.50.070213(Journal) ========================================================== Created: 2023-01-05 12:10:58 ConfID: 6692661 CauseID: 1557137842 OtherID: 1363324118 JT: Japanese Journal of Applied Physics MD: Kimura,50,6s,614,2011,Improved Performances of Acoustic Energy Harvester Fabricated Using Sol/Gel Lead Zirconate Titanate Thin Film DOI: 10.1143/JJAP.50.06GM14(Journal) (6692661-N) DOI: 10.7567/JJAP.50.06GM14(Journal) ========================================================== Created: 2023-01-05 12:10:55 ConfID: 6692659 CauseID: 1557137840 OtherID: 1363324101 JT: Japanese Journal of Applied Physics MD: Dang,50,6s,615,2011,Fabrication of Focus-Variable Fluidic Microlens Using Single Casting DOI: 10.1143/JJAP.50.06GM15(Journal) (6692659-N) DOI: 10.7567/JJAP.50.06GM15(Journal) ========================================================== Created: 2023-01-05 12:10:53 ConfID: 6692656 CauseID: 1557137834 OtherID: 1363323219 JT: Japanese Journal of Applied Physics MD: Nishikawa,50,1s2,104,2011,Ti-Doped VO2 Films Grown on Glass Substrates by Excimer-Laser-Assisted Metal Organic Deposition Process DOI: 10.1143/JJAP.50.01BE04(Journal) (6692656-N) DOI: 10.7567/JJAP.50.01BE04(Journal) ========================================================== Created: 2023-01-05 12:10:53 ConfID: 6692657 CauseID: 1557137835 OtherID: 1363324098 JT: Japanese Journal of Applied Physics MD: Wang,50,6s,608,2011,Effects of Granularity of Complementary Patterns in a Capacity-Equalized Mold Used for UV Nanoimprint Lithography DOI: 10.1143/JJAP.50.06GK08(Journal) (6692657-N) DOI: 10.7567/JJAP.50.06GK08(Journal) ========================================================== Created: 2023-01-05 12:11:00 ConfID: 6692670 CauseID: 1557137855 OtherID: 1363323201 JT: Japanese Journal of Applied Physics MD: Kadota,50,1s2,113,2011,Synthesis and Characterization of Thin Films of a Half-Metallic Oxide, Sr2FeMoO6, by Combinatorial Techniques DOI: 10.1143/JJAP.50.01BE13(Journal) (6692670-N) DOI: 10.7567/JJAP.50.01BE13(Journal) ========================================================== Created: 2023-01-05 12:11:03 ConfID: 6692671 CauseID: 1557137856 OtherID: 1363323420 JT: Japanese Journal of Applied Physics MD: Ohta,50,3r,32702,2011,Three-Dimensional Optical Measurement with Spectroscopic Function Using Fiber Laser Supercontinuum DOI: 10.1143/JJAP.50.032702(Journal) (6692671-N) DOI: 10.7567/JJAP.50.032702(Journal) ========================================================== Created: 2023-01-05 12:10:57 ConfID: 6692668 CauseID: 1557137849 OtherID: 1363324279 JT: Japanese Journal of Applied Physics MD: Nakamura,50,7s,716,2011,Sonication Enables Effective Iron Leaching from Green Tuff at Low Temperature DOI: 10.1143/JJAP.50.07HE16(Journal) (6692668-N) DOI: 10.7567/JJAP.50.07HE16(Journal) ========================================================== Created: 2023-01-05 12:11:00 ConfID: 6692669 CauseID: 1557137854 OtherID: 1363324177 JT: Japanese Journal of Applied Physics MD: Elfiky,50,7r,72301,2011,Numerical Analysis for Radiation Resistant InGaP Solar Cell DOI: 10.1143/JJAP.50.072301(Journal) (6692669-N) DOI: 10.7567/JJAP.50.072301(Journal) ========================================================== Created: 2023-01-05 12:10:56 ConfID: 6692666 CauseID: 1557137847 OtherID: 1363324253 JT: Japanese Journal of Applied Physics MD: Kakio,50,7s,709,2011,Deposition of Highly Oriented Ta2O5 Piezoelectric Thin Films on Silicon for Fabricating Film Bulk Acoustic Resonator Structure by RF Magnetron Sputtering DOI: 10.1143/JJAP.50.07HD09(Journal) (6692666-N) DOI: 10.7567/JJAP.50.07HD09(Journal) ========================================================== Created: 2023-01-05 12:10:57 ConfID: 6692667 CauseID: 1557137848 OtherID: 1363323227 JT: Japanese Journal of Applied Physics MD: Yanagida,50,1s2,106,2011,Development of ZnO Based Charged Particle Monitor for Processing Facility DOI: 10.1143/JJAP.50.01BG06(Journal) (6692667-N) DOI: 10.7567/JJAP.50.01BG06(Journal) ========================================================== Created: 2023-01-05 12:10:55 ConfID: 6692664 CauseID: 1557137845 OtherID: 1363324188 JT: Japanese Journal of Applied Physics MD: Kozawa,50,7r,76503,2011,Assessment and Extendibility of Chemically Amplified Resists for Extreme Ultraviolet Lithography: Consideration of Nanolithography beyond 22 nm Half-Pitch DOI: 10.1143/JJAP.50.076503(Journal) (6692664-N) DOI: 10.7567/JJAP.50.076503(Journal) ========================================================== Created: 2023-01-05 12:10:56 ConfID: 6692665 CauseID: 1557137846 OtherID: 1363324228 JT: Japanese Journal of Applied Physics MD: Yoda,50,7s,712,2011,Examination on Fast Algorithms of Compact Finite Difference Calculation for Finite Difference Time Domain Acoustic Wave Simulation DOI: 10.1143/JJAP.50.07HC12(Journal) (6692665-N) DOI: 10.7567/JJAP.50.07HC12(Journal) ========================================================== Created: 2023-01-05 12:10:30 ConfID: 6692614 CauseID: 1557137779 OtherID: 1363324278 JT: Japanese Journal of Applied Physics MD: Sakamoto,50,7s,720,2011,Applying Sub-Loop Tube to Control the Sound Field in a Loop-Tube-Type Thermoacoustic System DOI: 10.1143/JJAP.50.07HE20(Journal) (6692614-N) DOI: 10.7567/JJAP.50.07HE20(Journal) ========================================================== Created: 2023-01-05 12:10:33 ConfID: 6692615 CauseID: 1557137780 OtherID: 1363324211 JT: Japanese Journal of Applied Physics MD: Funane,50,7r,77001,2011,Noncontact Optical Brain Activity Measurement System Using Phosphor Placed on Skin DOI: 10.1143/JJAP.50.077001(Journal) (6692615-N) DOI: 10.7567/JJAP.50.077001(Journal) ========================================================== Created: 2023-01-05 12:10:27 ConfID: 6692612 CauseID: 1557137777 OtherID: 1363323147 JT: Japanese Journal of Applied Physics MD: Chen,50,1s1,103,2011,Behaviors of Absolute Densities of N, H, and NH3 at Remote Region of High-Density Radical Source Employing N2–H2 Mixture Plasmas DOI: 10.1143/JJAP.50.01AE03(Journal) (6692612-N) DOI: 10.7567/JJAP.50.01AE03(Journal) ========================================================== Created: 2023-01-05 12:10:30 ConfID: 6692613 CauseID: 1557137778 OtherID: 1363323185 JT: Japanese Journal of Applied Physics MD: Kim,50,1s2,101,2011,Manipulation of Work Function and Surface Free Energy of Tungsten Oxide Hole Injection Layer Modified with a Self-Assembled Monolayer DOI: 10.1143/JJAP.50.01BB01(Journal) (6692613-N) DOI: 10.7567/JJAP.50.01BB01(Journal) ========================================================== Created: 2023-01-05 12:10:26 ConfID: 6692610 CauseID: 1557137775 OtherID: 1363323381 JT: Japanese Journal of Applied Physics MD: Lee,50,3r,31101,2011,Effect of Indium Mole Fraction on the Diode Characteristics of ZnO:In/p-Si(111) Heterojunctions DOI: 10.1143/JJAP.50.031101(Journal) (6692610-N) DOI: 10.7567/JJAP.50.031101(Journal) ========================================================== Created: 2023-01-05 12:10:27 ConfID: 6692611 CauseID: 1557137776 OtherID: 1363323148 JT: Japanese Journal of Applied Physics MD: Tanoue,50,1s1,112,2011,Removal of Diamond-Like Carbon Film by Oxygen-Dominated Plasma Beam Converted from Filtered Carbon-Cathodic Arc DOI: 10.1143/JJAP.50.01AF12(Journal) (6692611-N) DOI: 10.7567/JJAP.50.01AF12(Journal) ========================================================== Created: 2023-01-05 12:10:25 ConfID: 6692608 CauseID: 1557137773 OtherID: 1363324158 JT: Japanese Journal of Applied Physics MD: Yi,50,7r,70207,2011,Single-Walled Carbon Nanotube Thin Film Transistor Fabricated Using Solution Prepared with 9,9-Dioctyfluorenyl-2,7-diyl–Bipyridine Copolymer DOI: 10.1143/JJAP.50.070207(Journal) (6692608-N) DOI: 10.7567/JJAP.50.070207(Journal) ========================================================== Created: 2023-01-05 12:10:26 ConfID: 6692609 CauseID: 1557137774 OtherID: 1363324031 JT: Japanese Journal of Applied Physics MD: Ohta,50,6s,601,2011,The Impact of Y Addition into TiO2 on Electronic States and Resistive Switching Characteristics DOI: 10.1143/JJAP.50.06GG01(Journal) (6692609-N) DOI: 10.7567/JJAP.50.06GG01(Journal) ========================================================== Created: 2023-01-05 12:10:32 ConfID: 6692622 CauseID: 1557137787 OtherID: 1363324094 JT: Japanese Journal of Applied Physics MD: Song,50,6s,609,2011,Development of a Wireless Love Wave Biosensor Platform for Multi-functional Detection DOI: 10.1143/JJAP.50.06GL09(Journal) (6692622-N) DOI: 10.7567/JJAP.50.06GL09(Journal) ========================================================== Created: 2023-01-05 12:10:35 ConfID: 6692623 CauseID: 1557137789 OtherID: 1363324057 JT: Japanese Journal of Applied Physics MD: Youn,50,6s,603,2011,Study on Quartz Multitier Mold Fabrication Using Gray Scale Laser Beam Lithography DOI: 10.1143/JJAP.50.06GK03(Journal) (6692623-N) DOI: 10.7567/JJAP.50.06GK03(Journal) ========================================================== Created: 2023-01-05 12:10:31 ConfID: 6692620 CauseID: 1557137785 OtherID: 1363324239 JT: Japanese Journal of Applied Physics MD: Sugimoto,50,7s,718,2011,Buried Object Detection Method Using Optimum Frequency Range in Extremely Shallow Underground DOI: 10.1143/JJAP.50.07HC18(Journal) (6692620-N) DOI: 10.7567/JJAP.50.07HC18(Journal) ========================================================== Created: 2023-01-05 12:10:32 ConfID: 6692621 CauseID: 1557137786 OtherID: 1363323259 JT: Japanese Journal of Applied Physics MD: Yen,50,1s2,107,2011,Substrate Shape Effect on the Sn Whisker Growth in the Electroplating Matte Sn System DOI: 10.1143/JJAP.50.01BJ07(Journal) (6692621-N) DOI: 10.7567/JJAP.50.01BJ07(Journal) ========================================================== Created: 2023-01-05 12:10:34 ConfID: 6692618 CauseID: 1557137783 OtherID: 1363324072 JT: Japanese Journal of Applied Physics MD: Lee,50,6s,606,2011,A Three-Dimensional Nanostructure Consisting of Hollow TiO2 Spheres Fabricated by Atomic Layer Deposition DOI: 10.1143/JJAP.50.06GH06(Journal) (6692618-N) DOI: 10.7567/JJAP.50.06GH06(Journal) ========================================================== Created: 2023-01-05 12:10:31 ConfID: 6692619 CauseID: 1557137784 OtherID: 1363323380 JT: Japanese Journal of Applied Physics MD: Ishida,50,3r,31302,2011,Seebeck Effects and Electronic Thermal Conductivity of IV–VI Materials DOI: 10.1143/JJAP.50.031302(Journal) (6692619-N) DOI: 10.7567/JJAP.50.031302(Journal) ========================================================== Created: 2023-01-05 12:10:33 ConfID: 6692616 CauseID: 1557137781 OtherID: 1363323386 JT: Japanese Journal of Applied Physics MD: Wu,50,3r,32101,2011,Output Power Enhancement of GaN-Based Light-Emitting Diodes Using Circular-Gear Structure DOI: 10.1143/JJAP.50.032101(Journal) (6692616-N) DOI: 10.7567/JJAP.50.032101(Journal) ========================================================== Created: 2023-01-05 12:10:34 ConfID: 6692617 CauseID: 1557137782 OtherID: 1363324133 JT: Japanese Journal of Applied Physics MD: Takahashi,50,7r,70103,2011,Low-Energy-Electron-Diffraction and X-ray-Phototelectron-Spectroscopy Studies of Graphitization of 3C-SiC(111) Thin Film on Si(111) Substrate DOI: 10.1143/JJAP.50.070103(Journal) (6692617-N) DOI: 10.7567/JJAP.50.070103(Journal) ========================================================== Created: 2023-01-05 12:10:37 ConfID: 6692630 CauseID: 1557137797 OtherID: 1363324200 JT: Japanese Journal of Applied Physics MD: Kondo,50,7r,75101,2011,Reactive Ion Etching of Carbon Nanowalls DOI: 10.1143/JJAP.50.075101(Journal) (6692630-N) DOI: 10.7567/JJAP.50.075101(Journal) ========================================================== Created: 2023-01-05 12:10:40 ConfID: 6692631 CauseID: 1557137801 OtherID: 1363324070 JT: Japanese Journal of Applied Physics MD: Kiyota,50,6s,612,2011,Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors DOI: 10.1143/JJAP.50.06GH12(Journal) (6692631-N) DOI: 10.7567/JJAP.50.06GH12(Journal) ========================================================== Created: 2023-01-05 12:10:35 ConfID: 6692628 CauseID: 1557137793 OtherID: 1363324092 JT: Japanese Journal of Applied Physics MD: Kubo,50,6s,610,2011,Resist Pattern Inspection Using Fluorescent Dye-Doped Polystyrene Thin Films in Reactive-Monolayer-Assisted Thermal Nanoimprint Lithography DOI: 10.1143/JJAP.50.06GK10(Journal) (6692628-N) DOI: 10.7567/JJAP.50.06GK10(Journal) ========================================================== Created: 2023-01-05 12:10:37 ConfID: 6692629 CauseID: 1557137796 OtherID: 1363324163 JT: Japanese Journal of Applied Physics MD: Goto,50,7r,71603,2011,Electrical Characterization of Terphenyl-Based Molecular Devices DOI: 10.1143/JJAP.50.071603(Journal) (6692629-N) DOI: 10.7567/JJAP.50.071603(Journal) ========================================================== Created: 2023-01-05 12:10:39 ConfID: 6692626 CauseID: 1557137792 OtherID: 1363324141 JT: Japanese Journal of Applied Physics MD: Tan,50,7r,70204,2011,Enhancing Photovoltaic Characteristics of Iron Doped Amphous Carbon/Al2O3/Si Solar Cell by Al2O3 Interface Passivation DOI: 10.1143/JJAP.50.070204(Journal) (6692626-N) DOI: 10.7567/JJAP.50.070204(Journal) ========================================================== Created: 2023-01-05 12:10:38 ConfID: 6692624 CauseID: 1557137790 OtherID: 1363323123 JT: Japanese Journal of Applied Physics MD: Murase,50,1s1,104,2011,Drastic Reduction of Dislocation Density in Semipolar (1122) GaN Stripe Crystal on Si Substrate by Dual Selective Metal–Organic Vapor Phase Epitaxy DOI: 10.1143/JJAP.50.01AD04(Journal) (6692624-N) DOI: 10.7567/JJAP.50.01AD04(Journal) ========================================================== Created: 2023-01-05 12:10:38 ConfID: 6692625 CauseID: 1557137791 OtherID: 1363323218 JT: Japanese Journal of Applied Physics MD: Kurosawa,50,1s2,111,2011,Change in Magnetic Characteristics of NiFe2O4 Nanoparticles upon Organic Matter Adsorption and Desorption DOI: 10.1143/JJAP.50.01BE11(Journal) (6692625-N) DOI: 10.7567/JJAP.50.01BE11(Journal) ========================================================== Created: 2023-01-05 12:10:44 ConfID: 6692638 CauseID: 1557137808 OtherID: 1363324262 JT: Japanese Journal of Applied Physics MD: Xu,50,7s,707,2011,Enhancement of Sonochemical Reaction by Dual-Pulse Ultrasound DOI: 10.1143/JJAP.50.07HE07(Journal) (6692638-N) DOI: 10.7567/JJAP.50.07HE07(Journal) ========================================================== Created: 2023-01-05 12:10:44 ConfID: 6692639 CauseID: 1557137809 OtherID: 1363323175 JT: Japanese Journal of Applied Physics MD: El-Hadad,50,1s1,102,2011,Fabrication of Al/Al3Ti Functionally Graded Materials by Reaction Centrifugal Mixed-Powder Method DOI: 10.1143/JJAP.50.01AJ02(Journal) (6692639-N) DOI: 10.7567/JJAP.50.01AJ02(Journal) ========================================================== Created: 2023-01-05 12:10:42 ConfID: 6692636 CauseID: 1557137806 OtherID: 1363324076 JT: Japanese Journal of Applied Physics MD: Pan,50,6s,604,2011,Grating Pitch Measurement Beyond the Diffraction Limit with Modified Laser Diffractometry DOI: 10.1143/JJAP.50.06GJ04(Journal) (6692636-N) DOI: 10.7567/JJAP.50.06GJ04(Journal) ========================================================== Created: 2023-01-05 12:10:43 ConfID: 6692637 CauseID: 1557137807 OtherID: 1363324222 JT: Japanese Journal of Applied Physics MD: Li,50,7r,77202,2011,Thermoelastic Damping in Micromechanical Resonators with a Proof Mass and a Network of Suspension Beams DOI: 10.1143/JJAP.50.077202(Journal) (6692637-N) DOI: 10.7567/JJAP.50.077202(Journal) ========================================================== Created: 2023-01-05 12:10:41 ConfID: 6692634 CauseID: 1557137804 OtherID: 1363324067 JT: Japanese Journal of Applied Physics MD: Chuang,50,6s,601,2011,Fabrication of Multi-Functional Optical Films by Using a Ultraviolet Curing Roll-to-Roll System DOI: 10.1143/JJAP.50.06GK01(Journal) (6692634-N) DOI: 10.7567/JJAP.50.06GK01(Journal) ========================================================== Created: 2023-01-05 12:10:42 ConfID: 6692635 CauseID: 1557137805 OtherID: 1363323349 JT: Japanese Journal of Applied Physics MD: Byun,50,3r,30202,2011,Blueshifting of Ion-Implanted InGaAs/InGaAsP Multiple Quantum Well Structures Using Two-Step Rapid Temperature Annealing Process DOI: 10.1143/JJAP.50.030202(Journal) (6692635-N) DOI: 10.7567/JJAP.50.030202(Journal) ========================================================== Created: 2023-01-05 12:10:40 ConfID: 6692632 CauseID: 1557137802 OtherID: 1363324077 JT: Japanese Journal of Applied Physics MD: Suzuki,50,6s,608,2011,Effect of Silicon Doping on the Photoluminescence and Photoreflectance Spectra of Catalyst-Free Molecular Beam Epitaxy–Vapor Liquid Solid Grown GaAs Nanowires on (111)Si Substrate DOI: 10.1143/JJAP.50.06GH08(Journal) (6692632-N) DOI: 10.7567/JJAP.50.06GH08(Journal) ========================================================== Created: 2023-01-05 12:10:41 ConfID: 6692633 CauseID: 1557137803 OtherID: 1363324252 JT: Japanese Journal of Applied Physics MD: Kadota,50,7s,710,2011,Properties of LiNbO3 Thin Film Deposited by Chemical Vapor Deposition and Frequency Characteristics of Film Bulk Acoustic Wave Resonator DOI: 10.1143/JJAP.50.07HD10(Journal) (6692633-N) DOI: 10.7567/JJAP.50.07HD10(Journal) ========================================================== Created: 2023-01-05 12:12:22 ConfID: 6692838 CauseID: 1557138075 OtherID: 1363324349 JT: Japanese Journal of Applied Physics MD: Akasaka,50,8r,80215,2011,Improvement of Electron Mobility above 100,000 cm2 V-1 s-1 in MgxZn1-xO/ZnO Heterostructures DOI: 10.1143/JJAP.50.080215(Journal) (6692838-N) DOI: 10.7567/JJAP.50.080215(Journal) ========================================================== Created: 2023-01-05 12:12:23 ConfID: 6692839 CauseID: 1557138076 OtherID: 1363324372 JT: Japanese Journal of Applied Physics MD: Sun,50,8r,81501,2011,Low-Temperature Sintering of Negative–Positive-Zero-Type Temperature-Stable Ceramics with ZnO–B2O3 Flux and SrCO3 Additive DOI: 10.1143/JJAP.50.081501(Journal) (6692839-N) DOI: 10.7567/JJAP.50.081501(Journal) ========================================================== Created: 2023-01-05 12:12:21 ConfID: 6692836 CauseID: 1557138073 OtherID: 1363324154 JT: Japanese Journal of Applied Physics MD: Kim,50,7r,70208,2011,Design of Nanosprings Using Si/SiGe Bilayer Thin Film DOI: 10.1143/JJAP.50.070208(Journal) (6692836-N) DOI: 10.7567/JJAP.50.070208(Journal) ========================================================== Created: 2023-01-05 12:12:22 ConfID: 6692837 CauseID: 1557138074 OtherID: 1363324319 JT: Japanese Journal of Applied Physics MD: Yamashita,50,8r,80204,2011,Investigation of Carrier Collection Capability in Organic Heterostructure with Conductive Polymer Nanofiber DOI: 10.1143/JJAP.50.080204(Journal) (6692837-N) DOI: 10.7567/JJAP.50.080204(Journal) ========================================================== Created: 2023-01-05 12:12:20 ConfID: 6692834 CauseID: 1557138070 OtherID: 1363324334 JT: Japanese Journal of Applied Physics MD: Ki,50,8r,80218,2011,Screening Effects on the Ion–Ion Collisions in Nonideal Dense Metal Plasmas DOI: 10.1143/JJAP.50.080218(Journal) (6692834-N) DOI: 10.7567/JJAP.50.080218(Journal) ========================================================== Created: 2023-01-05 12:12:20 ConfID: 6692835 CauseID: 1557138071 OtherID: 1363324214 JT: Japanese Journal of Applied Physics MD: Enpuku,50,7r,76602,2011,Design of Pickup Coil Made of Litz Wire and Cooled at 77 K for High Sensitive Measurement of AC Magnetic Fields DOI: 10.1143/JJAP.50.076602(Journal) (6692835-N) DOI: 10.7567/JJAP.50.076602(Journal) ========================================================== Created: 2023-01-05 12:12:19 ConfID: 6692832 CauseID: 1557138065 OtherID: 1363324410 JT: Japanese Journal of Applied Physics MD: Wormeester,50,8s1,801,2011,Feather-Like Structures in Positive Streamers Interpreted as Electron Avalanches DOI: 10.1143/JJAP.50.08JA01(Journal) (6692832-N) DOI: 10.7567/JJAP.50.08JA01(Journal) ========================================================== Created: 2023-01-05 12:12:19 ConfID: 6692833 CauseID: 1557138066 OtherID: 1363324155 JT: Japanese Journal of Applied Physics MD: Jang,50,7r,71502,2011,Preparation and Characterization of (Ba0.8Sr0.2)TiO3–Al2O3 Composite Oxide for Thin Film Capacitor DOI: 10.1143/JJAP.50.071502(Journal) (6692833-N) DOI: 10.7567/JJAP.50.071502(Journal) ========================================================== Created: 2023-01-05 12:12:26 ConfID: 6692846 CauseID: 1557138086 OtherID: 1363323413 JT: Japanese Journal of Applied Physics MD: Na,50,3r,34101,2011,A Mean-Field Photoreaction Model for the Pretilt Generation of a Liquid Crystal on Photopolymer Layers upon Ultraviolet Exposure DOI: 10.1143/JJAP.50.034101(Journal) (6692846-N) DOI: 10.7567/JJAP.50.034101(Journal) ========================================================== Created: 2023-01-05 12:12:27 ConfID: 6692847 CauseID: 1557138087 OtherID: 1363324224 JT: Japanese Journal of Applied Physics MD: Tuziuti,50,7r,78004,2011,Effects of Sonication Conditions on Ultrasonic Dispersion of Inorganic Particles in Acrylic Resin DOI: 10.1143/JJAP.50.078004(Journal) (6692847-N) DOI: 10.7567/JJAP.50.078004(Journal) ========================================================== Created: 2023-01-05 12:12:25 ConfID: 6692844 CauseID: 1557138084 OtherID: 1363324324 JT: Japanese Journal of Applied Physics MD: Nakatsuji,50,7s,718,2011,Three-Dimensional Anisotropy of Ultrasonic Wave Velocity in Bovine Cortical Bone: Effects of Hydroxyapatite Crystallites Orientation and Microstructure DOI: 10.1143/JJAP.50.07HF18(Journal) (6692844-N) DOI: 10.7567/JJAP.50.07HF18(Journal) ========================================================== Created: 2023-01-05 12:12:25 ConfID: 6692845 CauseID: 1557138085 OtherID: 1363324314 JT: Japanese Journal of Applied Physics MD: Fuyuki,50,8r,80203,2011,Deep-Hole Traps in p-Type GaAs1-xBix Grown by Molecular Beam Epitaxy DOI: 10.1143/JJAP.50.080203(Journal) (6692845-N) DOI: 10.7567/JJAP.50.080203(Journal) ========================================================== Created: 2023-01-05 12:12:24 ConfID: 6692842 CauseID: 1557138079 OtherID: 1363324373 JT: Japanese Journal of Applied Physics MD: Moritomo,50,8r,85602,2011,Three-to-One Dimensional Crossover of Growth Mode in Transition Metal Cyanide Film DOI: 10.1143/JJAP.50.085602(Journal) (6692842-N) DOI: 10.7567/JJAP.50.085602(Journal) ========================================================== Created: 2023-01-05 12:12:29 ConfID: 6692843 CauseID: 1557138083 OtherID: 1363323249 JT: Japanese Journal of Applied Physics MD: Janmanee,50,1s2,102,2011,Detection of Human IgG on Poly(pyrrole-3-carboxylic acid) Thin Film by Electrochemical-Surface Plasmon Resonance Spectroscopy DOI: 10.1143/JJAP.50.01BK02(Journal) (6692843-N) DOI: 10.7567/JJAP.50.01BK02(Journal) ========================================================== Created: 2023-01-05 12:12:23 ConfID: 6692840 CauseID: 1557138077 OtherID: 1363324354 JT: Japanese Journal of Applied Physics MD: Lias,50,8r,81607,2011,Determination of Polar Anchoring Strength for Polymer-Stabilized Blue Phase Liquid Crystal Device DOI: 10.1143/JJAP.50.081607(Journal) (6692840-N) DOI: 10.7567/JJAP.50.081607(Journal) ========================================================== Created: 2023-01-05 12:12:24 ConfID: 6692841 CauseID: 1557138078 OtherID: 1363324291 JT: Japanese Journal of Applied Physics MD: Ito,50,7s,704,2011,Assessment of Linearity of Bone-Conducted Ultrasound Transmission in the Human Head DOI: 10.1143/JJAP.50.07HF04(Journal) (6692841-N) DOI: 10.7567/JJAP.50.07HF04(Journal) ========================================================== Created: 2023-01-05 12:12:33 ConfID: 6692854 CauseID: 1557138102 OtherID: 1363324367 JT: Japanese Journal of Applied Physics MD: Oida,50,8r,81601,2011,Air-Stable Inverted Organic Solar Cells with Pentacene Anode Buffer Layer DOI: 10.1143/JJAP.50.081601(Journal) (6692854-N) DOI: 10.7567/JJAP.50.081601(Journal) ========================================================== Created: 2023-01-05 12:12:34 ConfID: 6692855 CauseID: 1557138103 OtherID: 1363322974 JT: Japanese Journal of Applied Physics MD: Okamoto,50,12r,120201,2011,InGaAs Nano-Photodiode Enhanced Using Polarization-Insensitive Surface-Plasmon Antennas DOI: 10.1143/JJAP.50.120201(Journal) (6692855-N) DOI: 10.7567/JJAP.50.120201(Journal) ========================================================== Created: 2023-01-05 12:12:30 ConfID: 6692852 CauseID: 1557138099 OtherID: 1363323382 JT: Japanese Journal of Applied Physics MD: Ivaldi,50,3r,31004,2011,Influence of a GaN Cap Layer on the Morphology and the Physical Properties of Embedded Self-Organized InN Quantum Dots on GaN(0001) Grown by Metal–Organic Vapour Phase Epitaxy DOI: 10.1143/JJAP.50.031004(Journal) (6692852-N) DOI: 10.7567/JJAP.50.031004(Journal) ========================================================== Created: 2023-01-05 12:12:33 ConfID: 6692853 CauseID: 1557138101 OtherID: 1363324378 JT: Japanese Journal of Applied Physics MD: Kang,50,8r,86501,2011,Etch Damage of Ge2Sb2Te5 for Different Halogen Gases DOI: 10.1143/JJAP.50.086501(Journal) (6692853-N) DOI: 10.7567/JJAP.50.086501(Journal) ========================================================== Created: 2023-01-05 12:12:28 ConfID: 6692850 CauseID: 1557138090 OtherID: 1363322984 JT: Japanese Journal of Applied Physics MD: Cha,50,12r,120205,2011,Chemical Composition and Thermal Stability of Atomic Force Microscope-Assisted Anodic Oxides as Nanomasks for Molecular Beam Epitaxy DOI: 10.1143/JJAP.50.120205(Journal) (6692850-N) DOI: 10.7567/JJAP.50.120205(Journal) ========================================================== Created: 2023-01-05 12:12:29 ConfID: 6692851 CauseID: 1557138091 OtherID: 1363322926 JT: Japanese Journal of Applied Physics MD: Urabe,50,11r,116002,2011,Discharge-Mode Transition in Jet-Type Dielectric Barrier Discharge Using Argon/Acetone Gas Flow Ignited by Small Helium Plasma Jet DOI: 10.1143/JJAP.50.116002(Journal) (6692851-N) DOI: 10.7567/JJAP.50.116002(Journal) ========================================================== Created: 2023-01-05 12:12:27 ConfID: 6692848 CauseID: 1557138088 OtherID: 1363322917 JT: Japanese Journal of Applied Physics MD: Hyung,50,11r,112101,2011,Efficient Hole Injection for Top-Emitting Organic Light-Emitting Diodes Using Nickel Oxide by Oxygen Plasma Treatment DOI: 10.1143/JJAP.50.112101(Journal) (6692848-N) DOI: 10.7567/JJAP.50.112101(Journal) ========================================================== Created: 2023-01-05 12:12:28 ConfID: 6692849 CauseID: 1557138089 OtherID: 1363324207 JT: Japanese Journal of Applied Physics MD: Takahashi,50,7r,75802,2011,Oxidation Resistance of Ti–Si–N and Ti–Al–Si–N Films Deposited by Reactive Sputtering Using Alloy Targets DOI: 10.1143/JJAP.50.075802(Journal) (6692849-N) DOI: 10.7567/JJAP.50.075802(Journal) ========================================================== Created: 2023-01-05 12:12:35 ConfID: 6692862 CauseID: 1557138114 OtherID: 1363323355 JT: Japanese Journal of Applied Physics MD: Kozawa,50,3r,30209,2011,Thermalization Distance of Electrons Generated in Poly(4-hydroxystyrene) Film Containing Acid Generator upon Exposure to Extreme Ultraviolet Radiation DOI: 10.1143/JJAP.50.030209(Journal) (6692862-N) DOI: 10.7567/JJAP.50.030209(Journal) ========================================================== Created: 2023-01-05 12:12:38 ConfID: 6692863 CauseID: 1557138116 OtherID: 1363324369 JT: Japanese Journal of Applied Physics MD: Ino,50,8r,81603,2011,Real-Time Ellipsometric Characterization of Initial Growth Stage of Poly(3,4-ethylene dioxythiophene):Poly(styrene sulfonic acid) Films by Electrospray Deposition DOI: 10.1143/JJAP.50.081603(Journal) (6692863-N) DOI: 10.7567/JJAP.50.081603(Journal) ========================================================== Created: 2023-01-05 12:12:32 ConfID: 6692860 CauseID: 1557138108 OtherID: 1363324288 JT: Japanese Journal of Applied Physics MD: Nishikori,50,7s,721,2011,Finite Element Analysis of the Standing Wave Field in a Tube with Lossy Wall for Thermoacoustic System DOI: 10.1143/JJAP.50.07HE21(Journal) (6692860-N) DOI: 10.7567/JJAP.50.07HE21(Journal) ========================================================== Created: 2023-01-05 12:12:32 ConfID: 6692861 CauseID: 1557138109 OtherID: 1363324206 JT: Japanese Journal of Applied Physics MD: Hanasaki,50,7r,75102,2011,Location and Density Control of Carbon Nanotubes Synthesized Using Ferritin Molecules DOI: 10.1143/JJAP.50.075102(Journal) (6692861-N) DOI: 10.7567/JJAP.50.075102(Journal) ========================================================== Created: 2023-01-05 12:12:31 ConfID: 6692858 CauseID: 1557138107 OtherID: 1363324172 JT: Japanese Journal of Applied Physics MD: Kobayashi,50,7r,72601,2011,Enhancement of Third-Order Optical Susceptibility in Polythiophene Thin Films Fabricated by Drop Casting Using Anhydrous Solvent DOI: 10.1143/JJAP.50.072601(Journal) (6692858-N) DOI: 10.7567/JJAP.50.072601(Journal) ========================================================== Created: 2023-01-05 12:12:31 ConfID: 6692859 CauseID: 1557138106 OtherID: 1363324221 JT: Japanese Journal of Applied Physics MD: Hosoda,50,7s,703,2011,Low-Viscosity Measurement by Capillary Electromagnetically Spinning Technique DOI: 10.1143/JJAP.50.07HB03(Journal) (6692859-N) DOI: 10.7567/JJAP.50.07HB03(Journal) ========================================================== Created: 2023-01-05 12:12:34 ConfID: 6692856 CauseID: 1557138104 OtherID: 1363323255 JT: Japanese Journal of Applied Physics MD: Lv,50,1s2,118,2011,Low-Temperature Sintering of (Bi,Na)0.83Ba0.17TiO3–0.2 wt % CuO Piezoelectric Ceramics from Nanopowders DOI: 10.1143/JJAP.50.01BJ18(Journal) (6692856-N) DOI: 10.7567/JJAP.50.01BJ18(Journal) ========================================================== Created: 2023-01-05 12:12:30 ConfID: 6692857 CauseID: 1557138105 OtherID: 1363324489 JT: Japanese Journal of Applied Physics MD: Takami,50,8s3,813,2011,Separate Detection of Sodium and Potassium Ions with Sub-micropipette Probe DOI: 10.1143/JJAP.50.08LB13(Journal) (6692857-N) DOI: 10.7567/JJAP.50.08LB13(Journal) ========================================================== Created: 2023-01-05 12:12:05 ConfID: 6692807 CauseID: 1557138031 OtherID: 1363323264 JT: Japanese Journal of Applied Physics MD: Yamagiwa,50,1s2,111,2011,One-Step Liquid-Phase Synthesis of Carbon Nanotubes with Catalyst Precursors of Organometallic Complexes DOI: 10.1143/JJAP.50.01BJ11(Journal) (6692807-N) DOI: 10.7567/JJAP.50.01BJ11(Journal) ========================================================== Created: 2023-01-05 12:12:02 ConfID: 6692805 CauseID: 1557138023 OtherID: 1363324320 JT: Japanese Journal of Applied Physics MD: Badcock,50,8r,80201,2011,The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates DOI: 10.1143/JJAP.50.080201(Journal) (6692805-N) DOI: 10.7567/JJAP.50.080201(Journal) ========================================================== Created: 2023-01-05 12:12:01 ConfID: 6692802 CauseID: 1557138021 OtherID: 1363324168 JT: Japanese Journal of Applied Physics MD: Banno,50,7r,74201,2011,ON-State Reliability of Solid-Electrolyte Switch under Pulsed Alternating Current Stress for Programmable Logic Device DOI: 10.1143/JJAP.50.074201(Journal) (6692802-N) DOI: 10.7567/JJAP.50.074201(Journal) ========================================================== Created: 2023-01-05 12:12:01 ConfID: 6692803 CauseID: 1557138022 OtherID: 1363324318 JT: Japanese Journal of Applied Physics MD: Ebihara,50,7s,706,2011,Study of Doppler Shift Correction for Underwater Acoustic Communication Using Orthogonal Signal Division Multiplexing DOI: 10.1143/JJAP.50.07HG06(Journal) (6692803-N) DOI: 10.7567/JJAP.50.07HG06(Journal) ========================================================== Created: 2023-01-05 12:12:04 ConfID: 6692800 CauseID: 1557138020 OtherID: 1363324339 JT: Japanese Journal of Applied Physics MD: Choi,50,8r,80219,2011,Chemically Compatible Sacrificial Layer-Assisted Lift-Off Patterning Method for Fabrication of Organic Light-Emitting Displays DOI: 10.1143/JJAP.50.080219(Journal) (6692800-N) DOI: 10.7567/JJAP.50.080219(Journal) ========================================================== Created: 2023-01-05 12:12:06 ConfID: 6692814 CauseID: 1557138037 OtherID: 1363324248 JT: Japanese Journal of Applied Physics MD: Mutoh,50,7s,704,2011,Cut Angle Dependences of Resonant Characteristics of β-Phase Quartz DOI: 10.1143/JJAP.50.07HD04(Journal) (6692814-N) DOI: 10.7567/JJAP.50.07HD04(Journal) ========================================================== Created: 2023-01-05 12:12:07 ConfID: 6692815 CauseID: 1557138038 OtherID: 1363322937 JT: Japanese Journal of Applied Physics MD: Kitahara,50,11r,115501,2011,Growth of Quasi-Single-Crystal Silicon–Germanium Thin Films on Glass Substrates by Continuous Wave Laser Lateral Crystallization DOI: 10.1143/JJAP.50.115501(Journal) (6692815-N) DOI: 10.7567/JJAP.50.115501(Journal) ========================================================== Created: 2023-01-05 12:12:08 ConfID: 6692812 CauseID: 1557138034 OtherID: 1363324204 JT: Japanese Journal of Applied Physics MD: Mei,50,7r,74202,2011,Analytical Model for Subthreshold Swing and Threshold Voltage of Surrounding Gate Metal–Oxide–Semiconductor Field-Effect Transistors DOI: 10.1143/JJAP.50.074202(Journal) (6692812-N) DOI: 10.7567/JJAP.50.074202(Journal) ========================================================== Created: 2023-01-05 12:12:10 ConfID: 6692813 CauseID: 1557138036 OtherID: 1363323427 JT: Japanese Journal of Applied Physics MD: Denpoh,50,3r,36001,2011,Modification of Semianalytical Finite Element Model for Radio Frequency Sheaths in Single- and Dual-Frequency Capacitively Coupled Plasmas: II. Effects of Nonuniform Bulk Plasma Density and Charging at Dielectric Surface DOI: 10.1143/JJAP.50.036001(Journal) (6692813-N) DOI: 10.7567/JJAP.50.036001(Journal) ========================================================== Created: 2023-01-05 12:12:00 ConfID: 6692810 CauseID: 1557138018 OtherID: 1363324330 JT: Japanese Journal of Applied Physics MD: Igarashi,50,7s,717,2011,Stability of Quantitative Evaluation Method of Liver Fibrosis Using Amplitude Distribution Model of Fibrotic Liver DOI: 10.1143/JJAP.50.07HF17(Journal) (6692810-N) DOI: 10.7567/JJAP.50.07HF17(Journal) ========================================================== Created: 2023-01-05 12:12:09 ConfID: 6692811 CauseID: 1557138035 OtherID: 1363323417 JT: Japanese Journal of Applied Physics MD: Yang,50,3r,34301,2011,Accelerated Degradation of High Power Light-Emitting Diode Resulted from Inhomogeneous Current Distribution DOI: 10.1143/JJAP.50.034301(Journal) (6692811-N) DOI: 10.7567/JJAP.50.034301(Journal) ========================================================== Created: 2023-01-05 12:12:06 ConfID: 6692808 CauseID: 1557138032 OtherID: 1363324147 JT: Japanese Journal of Applied Physics MD: Zheng,50,7r,70205,2011,Effect of Wasted Space on Device Characteristics of Nitride-Based Avalanche Photodiodes DOI: 10.1143/JJAP.50.070205(Journal) (6692808-N) DOI: 10.7567/JJAP.50.070205(Journal) ========================================================== Created: 2023-01-05 12:12:08 ConfID: 6692809 CauseID: 1557138033 OtherID: 1363322938 JT: Japanese Journal of Applied Physics MD: Chau,50,11r,112502,2011,Numerical Investigations on Birefringent Holey Fibers by Modified Elliptical Air Holes in Fiber Cladding DOI: 10.1143/JJAP.50.112502(Journal) (6692809-N) DOI: 10.7567/JJAP.50.112502(Journal) ========================================================== Created: 2023-01-05 12:12:11 ConfID: 6692822 CauseID: 1557138051 OtherID: 1363324366 JT: Japanese Journal of Applied Physics MD: Ho,50,8r,83001,2011,Surface Structural and Magnetic Properties of Cobalt Bilayer Deposited on Pt(111) with Ni Buffer Layer DOI: 10.1143/JJAP.50.083001(Journal) (6692822-N) DOI: 10.7567/JJAP.50.083001(Journal) ========================================================== Created: 2023-01-05 12:12:12 ConfID: 6692823 CauseID: 1557138052 OtherID: 1363324174 JT: Japanese Journal of Applied Physics MD: Lee,50,7r,72001,2011,Ambient Dependence of Photoluminescence for ZnO Nanocrystalline Films Synthesized in a Sonochemical Method DOI: 10.1143/JJAP.50.072001(Journal) (6692823-N) DOI: 10.7567/JJAP.50.072001(Journal) ========================================================== Created: 2023-01-05 12:12:14 ConfID: 6692820 CauseID: 1557138049 OtherID: 1363322993 JT: Japanese Journal of Applied Physics MD: Song,50,12r,121002,2011,Mg Doping Effect in Nonpolar a-Plane GaN DOI: 10.1143/JJAP.50.121002(Journal) (6692820-N) DOI: 10.7567/JJAP.50.121002(Journal) ========================================================== Created: 2023-01-05 12:12:13 ConfID: 6692821 CauseID: 1557138048 OtherID: 1363323245 JT: Japanese Journal of Applied Physics MD: Lee,50,1s2,114,2011,Characterization of ZnO Nanostructures Synthesized through a Thermal Oxidation of Zn–C Mixture in Air DOI: 10.1143/JJAP.50.01BJ14(Journal) (6692821-N) DOI: 10.7567/JJAP.50.01BJ14(Journal) ========================================================== Created: 2023-01-05 12:12:13 ConfID: 6692818 CauseID: 1557138046 OtherID: 1363322922 JT: Japanese Journal of Applied Physics MD: Kim,50,11r,116001,2011,Suppression of Initial Energy Spreads in Electron Radio Frequency Linacs for Intense Irradiation Applications DOI: 10.1143/JJAP.50.116001(Journal) (6692818-N) DOI: 10.7567/JJAP.50.116001(Journal) ========================================================== Created: 2023-01-05 12:12:10 ConfID: 6692819 CauseID: 1557138047 OtherID: 1363324164 JT: Japanese Journal of Applied Physics MD: Tobari,50,7r,73001,2011,Preparation and Characterization of Co/Pd Epitaxial Multilayer Films with Different Orientations DOI: 10.1143/JJAP.50.073001(Journal) (6692819-N) DOI: 10.7567/JJAP.50.073001(Journal) ========================================================== Created: 2023-01-05 12:12:07 ConfID: 6692816 CauseID: 1557138040 OtherID: 1363323439 JT: Japanese Journal of Applied Physics MD: Xian,50,3r,35807,2011,Electrical Property and Long-Term Stability of Transparent Capacitors Using Multi-Layer Transparent Conducting Oxide Electrodes DOI: 10.1143/JJAP.50.035807(Journal) (6692816-N) DOI: 10.7567/JJAP.50.035807(Journal) ========================================================== Created: 2023-01-05 12:12:12 ConfID: 6692817 CauseID: 1557138045 OtherID: 1363324271 JT: Japanese Journal of Applied Physics MD: Cui,50,7s,713,2011,Sonochemical Oxidation of Arsenite in Aqueous Phase DOI: 10.1143/JJAP.50.07HE13(Journal) (6692817-N) DOI: 10.7567/JJAP.50.07HE13(Journal) ========================================================== Created: 2023-01-05 12:12:17 ConfID: 6692830 CauseID: 1557138062 OtherID: 1363324166 JT: Japanese Journal of Applied Physics MD: Katori,50,7r,71601,2011,Surface Potential Measurement of Tris(8-hydroxyquinolinato)aluminum and Bis[N-(1-naphthyl)-N-phenyl]benzidine Thin Films Fabricated on Indium–Tin Oxide by Kelvin Probe Force Microscopy DOI: 10.1143/JJAP.50.071601(Journal) (6692830-N) DOI: 10.7567/JJAP.50.071601(Journal) ========================================================== Created: 2023-01-05 12:12:18 ConfID: 6692831 CauseID: 1557138064 OtherID: 1363324325 JT: Japanese Journal of Applied Physics MD: Tian,50,8r,80206,2011,Tunable Omnidirectional Total Reflection Frequency Range in One-Dimensional Photonic Crystals Based on the Faraday Effect DOI: 10.1143/JJAP.50.080206(Journal) (6692831-N) DOI: 10.7567/JJAP.50.080206(Journal) ========================================================== Created: 2023-01-05 12:12:11 ConfID: 6692828 CauseID: 1557138050 OtherID: 1363324268 JT: Japanese Journal of Applied Physics MD: Nakanishi,50,7s,713,2011,Zero Temperature Coefficient of Frequency Surface Acoustic Wave Resonator for Narrow-Duplex-Gap Application on SiO2/Al/LiNbO3 Structure DOI: 10.1143/JJAP.50.07HD13(Journal) (6692828-N) DOI: 10.7567/JJAP.50.07HD13(Journal) ========================================================== Created: 2023-01-05 12:12:17 ConfID: 6692829 CauseID: 1557138061 OtherID: 1363324212 JT: Japanese Journal of Applied Physics MD: Kanai,50,7s,701,2011,Minute Mechanical-Excitation Wave-Front Propagation in Human Myocardial Tissue DOI: 10.1143/JJAP.50.07HA01(Journal) (6692829-N) DOI: 10.7567/JJAP.50.07HA01(Journal) ========================================================== Created: 2023-01-05 12:12:15 ConfID: 6692826 CauseID: 1557138059 OtherID: 1363323016 JT: Japanese Journal of Applied Physics MD: Shibata,50,12r,124101,2011,Simultaneous Measurement of Electron and Ion Transfer in All-Solid Ion-Transfer Device Made of Transition Metal Cyanide Films DOI: 10.1143/JJAP.50.124101(Journal) (6692826-N) DOI: 10.7567/JJAP.50.124101(Journal) ========================================================== Created: 2023-01-05 12:12:16 ConfID: 6692827 CauseID: 1557138060 OtherID: 1363324197 JT: Japanese Journal of Applied Physics MD: Lee,50,7r,74203,2011,Asymmetric Electrical Properties of Half Corbino Hydrogenated Amorphous Silicon Thin-Film Transistor and Its Applications to Flat Panel Displays DOI: 10.1143/JJAP.50.074203(Journal) (6692827-N) DOI: 10.7567/JJAP.50.074203(Journal) ========================================================== Created: 2023-01-05 12:12:15 ConfID: 6692824 CauseID: 1557138058 OtherID: 1363324213 JT: Japanese Journal of Applied Physics MD: Ishida,50,7r,77201,2011,Highly Stable Spatio-Temporal Mechanical Characterization of Nanocontact between Sharp Tips Using Electrostatic Microactuator inside Transmission Electron Microscope DOI: 10.1143/JJAP.50.077201(Journal) (6692824-N) DOI: 10.7567/JJAP.50.077201(Journal) ========================================================== Created: 2023-01-05 12:12:16 ConfID: 6692825 CauseID: 1557138057 OtherID: 1363324341 JT: Japanese Journal of Applied Physics MD: Chen,50,8r,81001,2011,Deep Traps in InAlN Lattice-Matched to GaN Grown by Metal Organic Chemical Vapor Deposition Studied by Deep-Level Transient Spectroscopy DOI: 10.1143/JJAP.50.081001(Journal) (6692825-N) DOI: 10.7567/JJAP.50.081001(Journal) ========================================================== Created: 2023-01-05 12:11:50 ConfID: 6692775 CauseID: 1557137990 OtherID: 1363324176 JT: Japanese Journal of Applied Physics MD: Goto,50,7r,72503,2011,Wavelength-Selective Routing of Optical Short Pulses with Weighted Collinear Acoustooptic Devices DOI: 10.1143/JJAP.50.072503(Journal) (6692775-N) DOI: 10.7567/JJAP.50.072503(Journal) ========================================================== Created: 2023-01-05 12:11:47 ConfID: 6692772 CauseID: 1557137985 OtherID: 1363324135 JT: Japanese Journal of Applied Physics MD: Ohno,50,7r,70120,2011,Label-Free Aptamer-Based Immunoglobulin Sensors Using Graphene Field-Effect Transistors DOI: 10.1143/JJAP.50.070120(Journal) (6692772-N) DOI: 10.7567/JJAP.50.070120(Journal) ========================================================== Created: 2023-01-05 12:11:50 ConfID: 6692773 CauseID: 1557137989 OtherID: 1363323348 JT: Japanese Journal of Applied Physics MD: Wu,50,3r,30204,2011,Efficient Nonvolatile Rewritable Memories Based on Three-Dimensionally Confined Au Quantum Dots Embedded in Ultrathin Polyimide Layers DOI: 10.1143/JJAP.50.030204(Journal) (6692773-N) DOI: 10.7567/JJAP.50.030204(Journal) ========================================================== Created: 2023-01-05 12:11:47 ConfID: 6692770 CauseID: 1557137984 OtherID: 1363324165 JT: Japanese Journal of Applied Physics MD: Inoue,50,7r,72702,2011,Slope Efficiency Improvement in Mode-Hop Driven Tunable Single-Mode Cholesteric Liquid Crystal Laser DOI: 10.1143/JJAP.50.072702(Journal) (6692770-N) DOI: 10.7567/JJAP.50.072702(Journal) ========================================================== Created: 2023-01-05 12:11:46 ConfID: 6692768 CauseID: 1557137983 OtherID: 1363324123 JT: Japanese Journal of Applied Physics MD: Hsu,50,7r,70114,2011,High Frequency Performance of Graphene Transistors Grown by Chemical Vapor Deposition for Mixed Signal Applications DOI: 10.1143/JJAP.50.070114(Journal) (6692768-N) DOI: 10.7567/JJAP.50.070114(Journal) ========================================================== Created: 2023-01-05 12:11:52 ConfID: 6692783 CauseID: 1557137998 OtherID: 1363323261 JT: Japanese Journal of Applied Physics MD: Cho,50,1s2,105,2011,Formation and Structural Characteristic of Perpendicularly Aligned Boron Nitride Nanosheet Bridges in Polymer/Boron Nitride Composite Film and Its Thermal Conductivity DOI: 10.1143/JJAP.50.01BJ05(Journal) (6692783-N) DOI: 10.7567/JJAP.50.01BJ05(Journal) ========================================================== Created: 2023-01-05 12:11:54 ConfID: 6692780 CauseID: 1557137994 OtherID: 1363324153 JT: Japanese Journal of Applied Physics MD: Ahn,50,7r,71503,2011,Estimation of Interfacial Fixed Charge at Al2O3/SiO2 Using Slant-Etched Wafer for Solar Cell Application DOI: 10.1143/JJAP.50.071503(Journal) (6692780-N) DOI: 10.7567/JJAP.50.071503(Journal) ========================================================== Created: 2023-01-05 12:11:52 ConfID: 6692781 CauseID: 1557137997 OtherID: 1363324301 JT: Japanese Journal of Applied Physics MD: Takahashi,50,7s,716,2011,Automated Identification of the Heart Wall Throughout the Entire Cardiac Cycle Using Optimal Cardiac Phase for Extracted Features DOI: 10.1143/JJAP.50.07HF16(Journal) (6692781-N) DOI: 10.7567/JJAP.50.07HF16(Journal) ========================================================== Created: 2023-01-05 12:11:51 ConfID: 6692779 CauseID: 1557137995 OtherID: 1363323459 JT: Japanese Journal of Applied Physics MD: Miura,50,3r,38001,2011,Crystal Structure of Ditetradecyldimethylammonium–Au(dmit)2 Salt DOI: 10.1143/JJAP.50.038001(Journal) (6692779-N) DOI: 10.7567/JJAP.50.038001(Journal) ========================================================== Created: 2023-01-05 12:11:53 ConfID: 6692776 CauseID: 1557137991 OtherID: 1363324300 JT: Japanese Journal of Applied Physics MD: Takagi,50,7s,714,2011,Cavitation Inception by Dual-Frequency Excitation in High-Intensity Focused Ultrasound Treatment DOI: 10.1143/JJAP.50.07HF14(Journal) (6692776-N) DOI: 10.7567/JJAP.50.07HF14(Journal) ========================================================== Created: 2023-01-05 12:11:53 ConfID: 6692777 CauseID: 1557137992 OtherID: 1363324159 JT: Japanese Journal of Applied Physics MD: Xiao,50,7r,71301,2011,Silicon Thin Film Powder Samples for Electron Spin Resonance Investigation: Role of Substrate and Preparation Procedure DOI: 10.1143/JJAP.50.071301(Journal) (6692777-N) DOI: 10.7567/JJAP.50.071301(Journal) ========================================================== Created: 2023-01-05 12:11:59 ConfID: 6692790 CauseID: 1557138006 OtherID: 1363323223 JT: Japanese Journal of Applied Physics MD: Jang,50,1s2,107,2011,Fabrication and Characteristics of Through Silicon Vias Interconnection by Electroplating DOI: 10.1143/JJAP.50.01BG07(Journal) (6692790-N) DOI: 10.7567/JJAP.50.01BG07(Journal) ========================================================== Created: 2023-01-05 12:11:58 ConfID: 6692788 CauseID: 1557138005 OtherID: 1363323410 JT: Japanese Journal of Applied Physics MD: Son,50,3r,32203,2011,Refractometric Sensor Based on a Birefringent Silica Waveguide Using a Tapered Cladding DOI: 10.1143/JJAP.50.032203(Journal) (6692788-N) DOI: 10.7567/JJAP.50.032203(Journal) ========================================================== Created: 2023-01-05 12:11:56 ConfID: 6692789 CauseID: 1557138007 OtherID: 1363323456 JT: Japanese Journal of Applied Physics MD: Hsieh,50,3r,37203,2011,Magnetic Tweezers with Magnetic Thin Films DOI: 10.1143/JJAP.50.037203(Journal) (6692789-N) DOI: 10.7567/JJAP.50.037203(Journal) ========================================================== Created: 2023-01-05 12:11:58 ConfID: 6692787 CauseID: 1557138004 OtherID: 1363323424 JT: Japanese Journal of Applied Physics MD: Shimizu,50,3r,35102,2011,Electronic Transport of Single-Wall Carbon Nanotubes with Superconducting Contacts DOI: 10.1143/JJAP.50.035102(Journal) (6692787-N) DOI: 10.7567/JJAP.50.035102(Journal) ========================================================== Created: 2023-01-05 12:11:55 ConfID: 6692784 CauseID: 1557138002 OtherID: 1363324192 JT: Japanese Journal of Applied Physics MD: ElSabbagh,50,7r,76101,2011,Measurements of Rotational Temperature and Density of Molecular Nitrogen in Spark-Plug Assisted Atmospheric-Pressure Microwave Discharges by Rotational Raman Scattering DOI: 10.1143/JJAP.50.076101(Journal) (6692784-N) DOI: 10.7567/JJAP.50.076101(Journal) ========================================================== Created: 2023-01-05 12:11:55 ConfID: 6692785 CauseID: 1557138003 OtherID: 1363323234 JT: Japanese Journal of Applied Physics MD: Li,50,1s2,108,2011,Effect of Pt and Al Electrodes on Resistive Switching Properties of Sputter-Deposited Cu-Doped SiO2 Film DOI: 10.1143/JJAP.50.01BG08(Journal) (6692785-N) DOI: 10.7567/JJAP.50.01BG08(Journal) ========================================================== Created: 2023-01-05 12:12:03 ConfID: 6692799 CauseID: 1557138019 OtherID: 1363322981 JT: Japanese Journal of Applied Physics MD: Wang,50,12r,120207,2011,Dielectric and Piezoelectric Properties of (K0.48Na0.52)(Nb0.98Sb0.02)O3–BiScO3 Lead-Free Ceramics DOI: 10.1143/JJAP.50.120207(Journal) (6692799-N) DOI: 10.7567/JJAP.50.120207(Journal) ========================================================== Created: 2023-01-05 12:11:57 ConfID: 6692796 CauseID: 1557138010 OtherID: 1363324149 JT: Japanese Journal of Applied Physics MD: Choi,50,7r,71401,2011,Bias-Temperature- and Light-Induced Instability in Short-Channel (L = 1.5 µm) p-Type Polycrystalline Silicon Thin-Film Transistors on Glass Substrates DOI: 10.1143/JJAP.50.071401(Journal) (6692796-N) DOI: 10.7567/JJAP.50.071401(Journal) ========================================================== Created: 2023-01-05 12:12:04 ConfID: 6692797 CauseID: 1557138017 OtherID: 1363323354 JT: Japanese Journal of Applied Physics MD: Kim,50,3r,30203,2011,Terahertz Birefringence in Zinc Oxide DOI: 10.1143/JJAP.50.030203(Journal) (6692797-N) DOI: 10.7567/JJAP.50.030203(Journal) ========================================================== Created: 2023-01-05 12:11:57 ConfID: 6692794 CauseID: 1557138009 OtherID: 1363324304 JT: Japanese Journal of Applied Physics MD: Suzuki,50,7s,709,2011,Estimation of the Elevational Distance between Image Planes by Analysis of Ultrasonic Echoes from Point Scatterers DOI: 10.1143/JJAP.50.07HF09(Journal) (6692794-N) DOI: 10.7567/JJAP.50.07HF09(Journal) ========================================================== Created: 2023-01-05 12:12:03 ConfID: 6692795 CauseID: 1557138016 OtherID: 1363324332 JT: Japanese Journal of Applied Physics MD: Nagai,50,8r,80208,2011,Fast-response, Low-Afterglow 4,4'''-Bis[(2-butyloctyl)oxy]-1,1':4',1'':4'',1'''-quarterphenyl Dye-Based Liquid Scintillator for High-Contrast Detection of Laser Fusion-Generated Neutrons DOI: 10.1143/JJAP.50.080208(Journal) (6692795-N) DOI: 10.7567/JJAP.50.080208(Journal) ========================================================== Created: 2023-01-05 12:11:56 ConfID: 6692792 CauseID: 1557138008 OtherID: 1363322964 JT: Japanese Journal of Applied Physics MD: Hattori,50,11r,117301,2011,High-Performance Decomposition and Fixation of Dry Etching Exhaust Perfluoro-Compound Gases and Study of Their Mechanism DOI: 10.1143/JJAP.50.117301(Journal) (6692792-N) DOI: 10.7567/JJAP.50.117301(Journal) ========================================================== Created: 2023-01-05 12:11:35 ConfID: 6692742 CauseID: 1557137957 OtherID: 1363324270 JT: Japanese Journal of Applied Physics MD: Naruke,50,7s,715,2011,Sonolysis of Short-Chain Organic Dicarboxylic Acid Solutions DOI: 10.1143/JJAP.50.07HE15(Journal) (6692742-N) DOI: 10.7567/JJAP.50.07HE15(Journal) ========================================================== Created: 2023-01-05 12:11:39 ConfID: 6692740 CauseID: 1557137954 OtherID: 1363324145 JT: Japanese Journal of Applied Physics MD: Arai,50,7r,70206,2011,Fabrication of Ferromagnetic Ni(111) Nanoparticles Embedded Epitaxially in (Mg,Ni)O Matrix by Reduction of (Mg0.5Ni0.5)O(111) Epitaxial Thin Film DOI: 10.1143/JJAP.50.070206(Journal) (6692740-N) DOI: 10.7567/JJAP.50.070206(Journal) ========================================================== Created: 2023-01-05 12:11:39 ConfID: 6692741 CauseID: 1557137955 OtherID: 1363323239 JT: Japanese Journal of Applied Physics MD: Nakayama,50,1s2,101,2011,Step Hall Measurement of InSb Films Grown on Si(111) Substrate Using InSb Bilayer DOI: 10.1143/JJAP.50.01BF01(Journal) (6692741-N) DOI: 10.7567/JJAP.50.01BF01(Journal) ========================================================== Created: 2023-01-05 12:11:38 ConfID: 6692738 CauseID: 1557137952 OtherID: 1363323446 JT: Japanese Journal of Applied Physics MD: Kato,50,3r,36603,2011,Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO DOI: 10.1143/JJAP.50.036603(Journal) (6692738-N) DOI: 10.7567/JJAP.50.036603(Journal) ========================================================== Created: 2023-01-05 12:11:38 ConfID: 6692739 CauseID: 1557137953 OtherID: 1363324287 JT: Japanese Journal of Applied Physics MD: Okawa,50,7s,712,2011,Recovery of Bitumen from Oil Sand by Sonication in Aqueous Hydrogen Peroxide DOI: 10.1143/JJAP.50.07HE12(Journal) (6692739-N) DOI: 10.7567/JJAP.50.07HE12(Journal) ========================================================== Created: 2023-01-05 12:11:36 ConfID: 6692736 CauseID: 1557137950 OtherID: 1363324312 JT: Japanese Journal of Applied Physics MD: Mori,50,7s,709,2011,Design and Convergence Performance Analysis of Aspherical Acoustic Lens Applied to Ambient Noise Imaging in Actual Ocean Experiment DOI: 10.1143/JJAP.50.07HG09(Journal) (6692736-N) DOI: 10.7567/JJAP.50.07HG09(Journal) ========================================================== Created: 2023-01-05 12:11:35 ConfID: 6692737 CauseID: 1557137951 OtherID: 1363322915 JT: Japanese Journal of Applied Physics MD: Lee,50,11r,110206,2011,Polymer Organic Light-Emitting Devices with Cathodes Transferred under Ambient Conditions DOI: 10.1143/JJAP.50.110206(Journal) (6692737-N) DOI: 10.7567/JJAP.50.110206(Journal) ========================================================== Created: 2023-01-05 12:11:41 ConfID: 6692750 CauseID: 1557137968 OtherID: 1363322905 JT: Japanese Journal of Applied Physics MD: Tanaka,50,11r,110205,2011,Void-Free Cuprous Oxide Tube Prepared by Thermal Oxidation on Outside of Copper Tube DOI: 10.1143/JJAP.50.110205(Journal) (6692750-N) DOI: 10.7567/JJAP.50.110205(Journal) ========================================================== Created: 2023-01-05 12:11:44 ConfID: 6692748 CauseID: 1557137966 OtherID: 1363322919 JT: Japanese Journal of Applied Physics MD: Lee,50,11r,110209,2011,Realization of All-Optical Circular Shift Register Using Semiconductor Optical Amplifiers DOI: 10.1143/JJAP.50.110209(Journal) (6692748-N) DOI: 10.7567/JJAP.50.110209(Journal) ========================================================== Created: 2023-01-05 12:11:40 ConfID: 6692749 CauseID: 1557137967 OtherID: 1363324276 JT: Japanese Journal of Applied Physics MD: Park,50,7s,710,2011,Sonophotocatalytic Destruction of Chloroform: Comparison of Processes and Synergistic Effects DOI: 10.1143/JJAP.50.07HE10(Journal) (6692749-N) DOI: 10.7567/JJAP.50.07HE10(Journal) ========================================================== Created: 2023-01-05 12:11:40 ConfID: 6692746 CauseID: 1557137964 OtherID: 1363323238 JT: Japanese Journal of Applied Physics MD: Avis,50,1s2,103,2011,Characterization of Unpassivated-Solution-Processed Zinc–Tin Oxide Thin Film Transistors DOI: 10.1143/JJAP.50.01BG03(Journal) (6692746-N) DOI: 10.7567/JJAP.50.01BG03(Journal) ========================================================== Created: 2023-01-05 12:11:44 ConfID: 6692747 CauseID: 1557137965 OtherID: 1363324265 JT: Japanese Journal of Applied Physics MD: Kato,50,7s,703,2011,High-Frequency Electrodeless Quartz Crystal Microbalance Chip with a Bare Quartz Resonator Encapsulated in a Silicon Microchannel DOI: 10.1143/JJAP.50.07HD03(Journal) (6692747-N) DOI: 10.7567/JJAP.50.07HD03(Journal) ========================================================== Created: 2023-01-05 12:11:37 ConfID: 6692744 CauseID: 1557137959 OtherID: 1363322911 JT: Japanese Journal of Applied Physics MD: Ozaki,50,11r,111601,2011,Quasi-Two-Dimensional Optical Confinement in a Cholesteric Liquid Crystal Infiltrated Optical Fiber DOI: 10.1143/JJAP.50.111601(Journal) (6692744-N) DOI: 10.7567/JJAP.50.111601(Journal) ========================================================== Created: 2023-01-05 12:11:37 ConfID: 6692745 CauseID: 1557137960 OtherID: 1363323226 JT: Japanese Journal of Applied Physics MD: Kim,50,1s2,108,2011,Photoluminescence Properties of Eu3+ Activated CaMoSiO4 Red Phosphor by Combustion Method DOI: 10.1143/JJAP.50.01BF08(Journal) (6692745-N) DOI: 10.7567/JJAP.50.01BF08(Journal) ========================================================== Created: 2023-01-05 12:11:45 ConfID: 6692758 CauseID: 1557137976 OtherID: 1363322928 JT: Japanese Journal of Applied Physics MD: Sano,50,11r,115101,2011,Performance Prediction of Complementary Field-Effect Transistor Circuits Using Graphene with Band Gap Induced by Site-Potential Asymmetry DOI: 10.1143/JJAP.50.115101(Journal) (6692758-N) DOI: 10.7567/JJAP.50.115101(Journal) ========================================================== Created: 2023-01-05 12:11:45 ConfID: 6692759 CauseID: 1557137977 OtherID: 1363323411 JT: Japanese Journal of Applied Physics MD: Choi,50,3r,34201,2011,New Bidirectional T-Shaped Triple-Gate n-Type Polycrystalline Silicon Thin-Film Transistors Formed by Low-Temperature Sequential Lateral Solidification Process to Reduce of Kink Effects DOI: 10.1143/JJAP.50.034201(Journal) (6692759-N) DOI: 10.7567/JJAP.50.034201(Journal) ========================================================== Created: 2023-01-05 12:11:42 ConfID: 6692756 CauseID: 1557137971 OtherID: 1363324289 JT: Japanese Journal of Applied Physics MD: Yamakoshi,50,7s,701,2011,Effect of Ultrasonic Wave Irradiation Sequence in Microhollow Production Produced by Bubble Cavitation DOI: 10.1143/JJAP.50.07HF01(Journal) (6692756-N) DOI: 10.7567/JJAP.50.07HF01(Journal) ========================================================== Created: 2023-01-05 12:11:41 ConfID: 6692752 CauseID: 1557137969 OtherID: 1363322940 JT: Japanese Journal of Applied Physics MD: Watanabe,50,11r,113002,2011,Origin of Very Low Effective Barrier Height in Magnetic Tunnel Junctions with a Semiconductor GaOx Tunnel Barrier DOI: 10.1143/JJAP.50.113002(Journal) (6692752-N) DOI: 10.7567/JJAP.50.113002(Journal) ========================================================== Created: 2023-01-05 12:11:42 ConfID: 6692753 CauseID: 1557137970 OtherID: 1363324124 JT: Japanese Journal of Applied Physics MD: Jung,50,7r,70107,2011,Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications DOI: 10.1143/JJAP.50.070107(Journal) (6692753-N) DOI: 10.7567/JJAP.50.070107(Journal) ========================================================== Created: 2023-01-05 12:11:46 ConfID: 6692767 CauseID: 1557137982 OtherID: 1363324114 JT: Japanese Journal of Applied Physics MD: Kim,50,6s,618,2011,Eutectic Solder Bonding for Highly Manufacturable Microelectromechanical Systems Probe Card DOI: 10.1143/JJAP.50.06GM18(Journal) (6692767-N) DOI: 10.7567/JJAP.50.06GM18(Journal) ========================================================== Created: 2023-01-05 12:11:49 ConfID: 6692764 CauseID: 1557137980 OtherID: 1363325487 JT: Japanese Journal of Applied Physics MD: Sun,50,3r,31601,2011,Properties of Charge Carrier Transport in Au/Phenyl C61 Butyric Acid Methyl Ester/Au Structure DOI: 10.1143/JJAP.50.031601(Journal) (6692764-N) DOI: 10.7567/JJAP.50.031601(Journal) ========================================================== Created: 2023-01-05 12:11:49 ConfID: 6692765 CauseID: 1557137981 OtherID: 1363323480 JT: Japanese Journal of Applied Physics MD: Inoue,50,3r,38003,2011,Tight-Binding Approach to Initial Stage of the Graphitization Process on a Vicinal SiC Surface DOI: 10.1143/JJAP.50.038003(Journal) (6692765-N) DOI: 10.7567/JJAP.50.038003(Journal) ========================================================== Created: 2023-01-05 12:11:48 ConfID: 6692763 CauseID: 1557137979 OtherID: 1363323351 JT: Japanese Journal of Applied Physics MD: Hirata,50,3r,30210,2011,Measurement of Contractile Activity in Small Animal's Digestive Organ by Carbon Nanotube-Based Force Transducer DOI: 10.1143/JJAP.50.030210(Journal) (6692763-N) DOI: 10.7567/JJAP.50.030210(Journal) ========================================================== Created: 2023-01-05 12:11:48 ConfID: 6692761 CauseID: 1557137978 OtherID: 1363323229 JT: Japanese Journal of Applied Physics MD: Choi,50,1s2,103,2011,Electronic Structures and Magnetism of Al/Fe(001) Thin-Film Systems: First-Principles Calculations DOI: 10.1143/JJAP.50.01BF03(Journal) (6692761-N) DOI: 10.7567/JJAP.50.01BF03(Journal)